Abstract: In a configuration to join thermoelectric elements with an electrode in a thermoelectric module, reduction in junction reliability between the thermoelectric elements and the electrode is suppressed in a high-temperature environment and in an environment in which vibration and shock are imposed as load, to efficiently transmit the outer-circumferential temperature to the thermoelectric elements. In a thermoelectric module in which a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric element are alternately arranged by aligning the surfaces thereof on the high-temperature side and the surfaces thereof on the low-temperature side, to electrically connect the thermoelectric elements in series to each other; the p-type thermoelectric elements and the n-type thermoelectric element are joined via an intermediate layer with a deformable stress relaxation electrode, to thereby absorb stress taking place during the module assembling process and the module operation by the electrode.

Abstract: The invention relates to the technical field of LCD fabrication and specifically to a high and low temperature test equipment. The high and low temperature test equipment comprises a housing, and further comprises a partition disposed in the interior of the housing. The partition divides the interior of the housing into a plurality of chambers and is provided with a Peltier effect sheet. The Peltier effect sheet is used for, when it is powered-on, cooling at least one of the chambers and meanwhile heating at least one chamber other than the at least one of the chambers. The high and low temperature test equipment may cool and heat at the same time in an efficient, power conserving way and have uniform heating function.

Abstract: A circuit board with a heat-recovery function includes a substrate, a heat-storing device, and a thermoelectric device. The heat-storing device is embedded in the substrate and connected to a processor for performing heat exchange with the processor. The thermoelectric device embedded in the substrate includes a first metal-junction surface and a second metal-junction surface. The first metal-junction surface is connected to the heat-storing device for performing heat exchange with the heat-storing device. The second metal-junction surface is joined with the first metal-junction surface, in which the thermoelectric device generates an electric potential by a temperature difference between the first metal-junction surface and the second metal-junction surface.

Abstract: One illustrative method disclosed herein includes, among other things, sequentially forming a first material layer, a first capping layer, a second material layer and a second capping layer above a substrate, wherein the first and second material layers are made of semiconductor material having a lattice constant that is different than the substrate, the first material layer is strained as deposited, and a thickness of the first material layer exceeds its critical thickness required to be stable and strained, performing an anneal process after which the strain in the first material layer is substantially relaxed through the formation of crystallographic defects that are substantially confined to the semiconducting substrate, the first material layer, the first capping layer and the second material layer, and forming additional epitaxial semiconductor material on an upper surface of the resulting structure.

Abstract: A thermoelectric energy harvester comprises a cyclic energy input terminal supplying heat energy in a first part of the cycle to a thermal storage reservoir through a low thermal resistance generator. During a second part of the cycle, the thermal storage reservoir returns stored heat energy to the environment through an independent thermal circuit and a higher thermal resistance thermoelectric generator.

Abstract: The application relates to thermoelectric temperature control units, for example for controlling the temperature of an energy storage device in a motor vehicle. An exemplary embodiment comprises a Peltier element, having a first and a second surface, wherein the second surface is substantially adjacent or opposite to the first. The first surface is connected in a thermally conductive manner to a first and/or second flow duct, through which a fluid can flow. The second surface is connected in a thermally conductive manner to a heat-producing element, wherein the first flow duct is in fluid communication at one of the ends thereof with a first header, and the second flow duct is in fluid communication at one of the ends thereof with a second header, and the first flow duct and the second flow duct are in fluid communication at the respective second ends thereof with a common reversing header.

Abstract: A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.

Abstract: A field emission device is configured as a heat engine, and the performance of the device is optimized.

Abstract: A blade for a wind turbine includes at least one heating mat for generating heat, wherein the heating mat is mounted at an outer surface of the blade. The blade further includes at least one through-hole running from an inner space of the blade to the outer surface of the blade. The blade further has at least one conductive element, wherein the conductive element is electrically coupled to the heating mat. The conductive element is inserted in the through-hole for generating an electric connection between the inner space and the outer surface.

Abstract: A thermoelectric energy harvesting system may include a thermoelectric generator that may produce a voltage in response to a temperature difference across the thermoelectric generator. The thermoelectric generator may be captured between the housing and the base member. The system may include at least one mechanical fastener coupling the housing to the base member and including a shoulder spacer formed of thermally-insulating material and positioned under the mechanical fastener.

Abstract: A method of manufacturing fiber based and syntactic foam based composite type thermally insulating materials that retain high performance thermoelectric properties, and which can be used as thermoelectric generators or Peltier coolers for a wide range of industrial, commercial, residential and military applications.

Abstract: Various particular embodiments include a method of forming an integrated circuit (IC) device including: forming at least one thermoelectric cooling device over an upper surface of a handle wafer based upon a known location of an elevated temperature region in the IC device; forming a first oxide layer over the handle wafer covering the thermoelectric cooling device; forming a second oxide layer over a donor silicon wafer to form a donor wafer; bonding the donor wafer to the handle wafer at the first oxide layer and the second oxide layer, such that the second oxide layer contacts the first oxide layer on the handle wafer; and forming at least one semiconductor device over the donor silicon wafer side of the donor wafer, wherein the at least one thermoelectric cooling device is located proximate the at least one semiconductor device.

Abstract: The present invention provides a tubular thermoelectric generation device, comprising: a plurality of plate-like p-type thermoelectric members each having an external periphery, a through hole, and an internal periphery formed around the through hole; a plurality of plate-like n-type thermoelectric members each having an external periphery, a through hole, and an internal periphery formed around the through hole; a plurality of external electrodes; and a plurality of internal electrodes. Each of the plurality of the external electrodes comprises an internal flange expanded in a direction from the external periphery of the p-type thermoelectric member toward the internal periphery of the p-type thermoelectric member. Each of the plurality of the internal electrodes comprises an external flange expanded in a direction from the internal periphery of the p-type thermoelectric member toward the external periphery of the p-type thermoelectric member.

Abstract: This invention relates to providing energy efficient thermo-electric heat pump systems for iso-thermal transport and storage, of perishable goods, such as vaccines, chemicals, biologicals, and other temperature sensitive goods. Also this invention relates to providing energy efficient iso-thermal transport and storage systems, of perishable goods, which are compact, light weight. This invention further relates to providing on-board energy storage for sustaining, for multiple days, the ability of such iso-thermal transport and storage systems to maintain temperature sensitive goods at a constant-temperature.

Abstract: A thermoelectric device includes at least a first metal foil having a first material thickness, a second metal foil having a second material thickness, an interspace between the first metal foil and the second metal foil, an electrical insulation coating on the first metal foil and the second metal foil towards the interspace and a multiplicity of first semiconductor components and second semiconductor components, which are fixed and electrically connected to one another on the insulation coating in the interspace. A thermoelectric apparatus having a multiplicity of thermoelectric devices and a motor vehicle having a thermoelectric apparatus, are also provided.

Abstract: Embodiments of the present invention provide a semiconductor structure and method to dissipate heat generated by semiconductor devices by utilizing backside thermoelectric devices. In certain embodiments, the semiconductor structure comprises an electronic device formed on a first side of the semiconductor structure. The semiconductor structure also comprises a thermoelectric cooling device formed on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction. In other embodiments, the method comprises forming an electronic device on a first side of a semiconductor structure. The method also comprises forming a thermoelectric cooling device on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction.

Abstract: A thermoelectric material having a high performance index and a thermoelectric module and a thermoelectric device including the thermoelectric material, and more particularly, to a thermoelectric material having a high Seebeck coefficient, high electrical conductivity, and low thermal conductivity and a thermoelectric module and a thermoelectric device including the thermoelectric material.

Abstract: A method for manufacturing a thermoelectric generator includes the steps of replicating a structure into a flexible substrate for providing a set of cavities; providing an initiator in the cavities for growing respective piles of thermoelectric materials; growing the respective piles of thermoelectric materials from said initiator; and providing electrical connection between the respective piles of thermoelectric materials for forming thermocouples of the thermoelectric generator.

Abstract: A thermoelectric conversion element includes a p-type metal thermoelectric conversion material containing a metal as its main constituent, an n-type oxide thermoelectric conversion material containing an oxide as its main constituent, and a composite oxide insulating material containing a composite oxide as its main constituent. The p-type metal thermoelectric conversion material and the n-type oxide thermoelectric conversion material are directly bonded in a region of a junction plane between the p-type metal thermoelectric conversion material and the n-type oxide thermoelectric conversion material, and the p-type metal thermoelectric conversion material and the n-type oxide thermoelectric conversion material are bonded to each other with the composite oxide insulating material interposed therebetween so as to define a pn conjunction pair in the other region of the junction plane. A perovskite-type oxide is used as the n-type oxide thermoelectric conversion material.

Abstract: Provided is a thermoelectric device. The thermoelectric device includes a substrate; first and second electrodes disposed at one side of the substrate, wherein the first and second electrodes are apart from each other; a common electrode formed on the other side of the substrate, wherein the common electrode is separated from the first and second electrodes; first and second legs connecting the common electrode to the first electrode, and the common electrode to the second electrode, respectively; and first and second barrier patterns covering the first and second legs and the substrate between the common electrode and the first electrode and between the common electrode and the second electrode, wherein the first and second barrier patterns prevents the short between the first and second legs and the common electrode and between the first and second legs and the first and second electrodes.

Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Abstract: Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk.

Abstract: Thermoelectric devices are provided. In one embodiment, a thermoelectric device may include a glass wafer defined by conductive vias, a second wafer, and a plurality of metal film disposed between the glass wafer and the second wafer and against solid, conductive, integral, end surfaces of the conductive vias. A nanogap may be disposed between the metal film and the second wafer. The nanogap may have been created by applying a voltage extending between the conductive vias and the second wafer. Methods of forming the devices, along with methods of using the devices to transform heat energy to electricity, and for refrigeration, are also provided.

Abstract: The invention relates to a method for producing a thermoelectric component or at least a semifinished version thereof, in which at least one thermoelectric active material in dry powder form is introduced into at least some of the holes of a perforated template. It addresses the problem of specifying a method which can be conducted in a particularly economically viable manner. The problem is solved by virtue of the active material remaining in the holes of the template, and the template filled with active material becoming a constituent of the thermoelectric component produced.

Abstract: A thermoelectric device and method based on creating a structure of nanoclusters in a composite metal and insulator material by co-depositing the metal and insulator material and irradiating the composite material to create nanoclusters of metal within the composite material. In one variation, the composite material may be continuously deposited and concurrently irradiated. A further variation based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure.

Abstract: Disclosed herein are thermoelectric materials with high performance characteristics, and methods of use thereof Among the thermoelectric materials disclosed are those of the formula (Bi1?xSbx)2Te3. In some embodiments, the invention teaches that 0.5?x?0.9. In some embodiments, the invention further teaches doping with iodine (I), in order to decrease the hole carrier concentration of (Bi1?xSbx)2Te3 mixed crystal and improve zT.

Abstract: Thermoelectric cooling devices and methods for producing and using the devices are disclosed, wherein the cooling devices include a polymer composite of a polymer and nanoparticles of at least one paramagnetic material. A source for producing an electric field within the polymer composite produces a corresponding heat transfer from one surface of the composite to the other.

Abstract: According to one embodiment, a thermoelectric device is provided with thermoelectric elements and formed of a material capable of exhibiting the thermoelectric effect and a first electrode located at end portions of the thermoelectric elements. The first electrode includes an electrode member, a soaking member having electrical conductivity, located between the electrode member and the thermoelectric elements, and including facing portions facing the thermoelectric elements and folded portions folded back at peripheral edges of the facing portions so as to lie on the opposite side to the thermoelectric elements, and an elastic member located on the opposite side of the facing portions to the thermoelectric elements, at least a part of the peripheral edge of the elastic member being held between the folded portions and the facing portions of the soaking member.

Abstract: An efficiency-enhanced, three-terminal, bi-junction thermoelectric device driven by independently-adjustable parameters of temperature and voltage.

Abstract: A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structure 100 is provided, having a SrTiO3 substrate 10 having a (210) plane substrate surface and having a concave-convex structure including (100) plane terrace portions 12, 14 and step portions 16 extending along the in-plane [001] axis of the substrate surface, and a thermoelectric conversion material 22 formed on the surface of at least a portion of the concave-convex structure.

Abstract: A tubular thermoelectric device wherein conductive substrates and completion elements serve a multiple role of structural support, thermal conductance and electrical conductance. Improved system thermoelectric performance accrues from the minimization of the number of interfaces between dissimilar materials, leading to a reduction in system thermal parasitics and system electrical parasitics. By engineering the shape and orientation of substrates and completion elements, improvements in heat transfer to heat reservoirs is accomplished and improved electrical conductivity is accomplished.

Abstract: An apparatus and method for rapid thermal cycling including a thermal diffusivity plate. The thermal diffusivity plate can provide substantial temperature uniformity throughout the thermal block assembly during thermal cycling by a thermoelectric module. An edge heater can provide substantial temperature uniformity throughout the thermal block assembly during thermal cycling.

Abstract: A thermoelectric device based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation.

Abstract: A method of producing a nanocomposite thermoelectric conversion material includes preparing a solution that contains salts of a plurality of first elements constituting a thermoelectric conversion material, and a salt of a second element that has a redox potential lower than redox potentials of the first elements; precipitating the first elements, thereby producing a matrix-precursor that is a precursor of a matrix made of the thermoelectric conversion material, by adding a reducing agent to the solution; precipitating the second element in the matrix-precursor, thereby producing slurry containing the first elements and the second element, by further adding the reducing agent to the solution; and alloying the plurality of the first elements, thereby producing the matrix (70) made of the thermoelectric conversion material, and producing nano-sized phonon-scattering particles (80) including the second element, which are dispersed in the matrix (70), by filtering and washing the slurry, and then, heat-treating t

Abstract: A transverse thermoelectric device includes a superlattice body, electrically conductive first and second contacts, and first and second thermal contacts. The superlattice body extends between opposite first and second ends along a first direction and between opposite first and second sides along a different, second direction. The superlattice body includes alternating first and second layers of crystalline materials oriented at an oblique angle relative to the first direction. The electrically conductive first contact is coupled with the first end of the superlattice and the electrically conductive second contact is coupled with the second end of the superlattice. The first thermal contact is thermally coupled to the first side of the superlattice and the second thermal contact is thermally coupled to the second side of the superlattice. A Seebeck tensor of the superlattice body is ambipolar.

Abstract: A method is provided for producing a thermoelectric component having at least one pair of thermoelectric legs, including an n-leg and a p-leg, wherein both legs are welded to an electrically conductive contact material, and wherein the n-leg and the p-leg of the pair of legs are welded in separate welding steps to the contact material. A thermoelectric component produced by the method is also provided.

Abstract: A thermoelectric module includes a first insulated substrate having a first opposing surface, a second insulated substrate having a second opposing surface, the second opposing surface faces the first opposing surface, a plurality of electrodes formed on the first and second opposing surfaces, a plurality of thermoelectric transducers provided between the first insulated substrate and the second insulated substrate, the plurality of thermoelectric transducers electrically connected with one another in series and/or in parallel via each electrode, and a conducting circuit electrically connecting the plurality of electrodes with an external power source, wherein the first insulated substrate includes a substrate body having the first opposing surface and a projecting portion being formed continuously from the substrate body and extending in a direction that intersects the substrate body, and the projecting portion includes a fixing surface extending in the direction that intersects the substrate body.

Abstract: A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate su

Abstract: A connector for a thermoelectric conversion element free of a continuity failure and that is high in electrical reliability. In a thermoelectric conversion module, each thermoelectric conversion element has first and second electrode faces, and the thermoelectric conversion elements adjacent to each other are electrically connected thereto via connectors formed in a predetermined shape. Further, the connectors include a pair of fitted portions that are engagingly mounted to a first electrode face and another second electrode of the thermal electric conversion elements that are adjacent thereto, and a connection portions for connecting one pair of these fitted portions.

Abstract: The present invention relates to a thermoelectric device, in particular an all-organic thermoelectric device, and to an array of such thermoelectric devices. Furthermore, the present invention relates to a method of manufacturing a thermoelectric device, in particular an all-organic thermoelectric device. Moreover, the present invention relates to uses of the thermoelectric device and/or the array in accordance with the present invention.

Abstract: A thermoelectric material includes a stack structure including alternately stacked first and second material layers. The first material layer may include a carbon nano-material. The second material layer may include a thermoelectric inorganic material. The first material layer may include a thermoelectric inorganic material in addition to the carbon nano-material. The carbon nano-material may include, for example, graphene. At least one of the first and second material layers may include a plurality of nanoparticles. The thermoelectric material may further include at least one conductor extending in an out-of-plane direction of the stack structure.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: A thermoelectric material including a compound represented by Formula 1: MxBiy?aAaSez?bQb ??Formula 1 wherein, 1<x<2, 4<y?a<5, 7<z?b<9, 0?a<5, and 0?b<9; M is at least one transition metal element; A is at least one element of Groups 13 to 15; and Q is at least one element of Groups 16 to 17.

Abstract: A thermoelectric segment and a method for fabricating. The fabricating includes forming structures by depositing thin-film metal-semiconductor multilayers on substrates and depositing metal layers on the multilayers, joining metal bonding layers to form dual structures with combined bonding layers; and removing at least one of the substrates; and using the dual structure to form a thermoelectric segments. The method can include dicing the dual structures before or after removing the substrates. The method can include depositing additional bonding layers and joining dual structures to make thermoelectric segments of different thicknesses. Each multilayer can be about 5-10 ?m thick. Each bonding layer can be about 1-2 ?m thick. The bonding layers can be made of a material having high thermal and electrical conductivity. The multilayers can be (Hf,Zr,Ti,W)N/(Sc,Y,La,Ga,In,Al)N superlattice layers. Metal nitride layers can be deposited between each of the bonding layers and multilayers.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A thermoelectric material including a 3-dimensional nanostructure, wherein the 3-dimensional nanostructure includes a 2-dimensional nanostructure connected to a 1-dimensional nanostructure.

Abstract: The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Abstract: Thermoelectric solid material and method thereof. The thermoelectric solid material includes a plurality of nanowires. Each nanowire of the plurality of nanowires corresponds to an aspect ratio (e.g., a ratio of a length of a nanowire to a diameter of the nanowire) equal to or larger than 10, and each nanowire of the plurality of nanowires is chemically bonded to one or more other nanowires at at least two locations of the each nanowire.

Abstract: A thermoelectric module including: an n-type thermoelectric element; a p-type thermoelectric element; a diffusion blocking layer bonded integrally on each of a top and a bottom surface of the n-type thermoelectric element and on each of a top and a bottom surface of the p-type thermoelectric element; an electrode on the n-type thermoelectric element and on the p-type thermoelectric element; and a bonding layer disposed between the electrode and at least one of the n-type thermoelectric element and the p-type thermoelectric element, wherein the bonding layer includes an amorphous metal.

Abstract: A heat recycling system for recycling heat from an electronic device includes a pipe with an inside tube and an outside tube coiled around the inside tube. The inside tube is connected to a first airduct to receive heated air from the electronic device. The outside tube is to receive cooling air from outside. A number of thermoelectric modules are formed in walls of the inside tube. A first end of each thermoelectric module is inserted into the outside tube, and a second end of each thermoelectric module is inserted into the inside tube. Therefore, the number of thermoelectric modules may generate current.