Polycrystalline Or Amorphous Semiconductor Patents (Class 136/258)
-
Patent number: 6638788Abstract: A solar cell is manufactured by bringing a front side of a semiconductor crystal substrate into contact with an electrolytic liquid containing a fluoride, placing an electrode in the electrolytic liquid, passing a current between the electrode and the semiconductor crystal substrate and applying light to the semiconductor crystal substrate to generate pairs of holes and electrons. Etching of the substrate proceeds by combining the holes with ions in the front side of the semiconductor crystal substrate which is held in contact with the electrolytic liquid, thereby forming at least one surface irregularity structure thereon.Type: GrantFiled: February 6, 2002Date of Patent: October 28, 2003Assignee: Ebara CorporationInventors: Makiko Emoto, Kentaro Fujita, Akio Shibata, Hiroshi Yokota
-
Patent number: 6635507Abstract: An apparatus and method are described for making a solar cell with an integrated bypass diode. The method comprises the steps of depositing a second layer having a first type of dopant on a first layer having an opposite type of dopant to the first type of dopant to form a solar cell, depositing a third layer having the first type of dopant on the second layer, depositing a fourth layer having the opposite type of dopant on the third layer, the third layer and fourth layer forming a bypass diode, selectively etching the third layer and the fourth layer to expose the second layer and the third layer, and applying contacts to the fourth layer, third layer, and the first layer to allow electrical connections to the assembly.Type: GrantFiled: July 14, 1999Date of Patent: October 21, 2003Assignee: Hughes Electronics CorporationInventors: Karim S. Boutros, Dmitri D. Krut, Nasser H. Karam
-
Patent number: 6635942Abstract: A semiconductor component (50), in particular a solar cell, which has at least one semiconductor base material (40) consisting of a mono or a polycrystalline structure. The semiconductor base material (40) consists at least in part of pyrite with the chemical composition FeS2 and which is cleaned for the purpose of achieving a defined degree of purity. Maximum benefit is drawn from the semiconductor base material (40) when it is produced from at least one layer of pyrite (51), at least one layer of boron (52) and at least one layer of phosphorous (53). An optimum type is derived from this semiconductor component when it is used as a solar cell.Type: GrantFiled: June 11, 1999Date of Patent: October 21, 2003Inventor: Nunzio La Vecchia
-
Publication number: 20030183270Abstract: The invention relates to a multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate (a), which is configured for illuminating from the substrate side, and to a production method for the cell. Said solar cell comprises a laser-crystallized multicrystalline silicon layer (b1,b2), whose lower layer region (b1), which is situated on the substrate (a) and provided as a nucleation layer and, at the same time, as a lower transparent electrode, is p-doped (alternatively, n-doped). The silicon layer's second layer region (b2), which faces away from the substrate is p-doped (alternatively, n-doped) less than the nucleation layer and serves as an absorber layer. The edge lengths of the crystallites in the multicrystalline layer (b1, b2) arc longer than the layer is thick.Type: ApplicationFiled: February 18, 2003Publication date: October 2, 2003Inventors: Fritz Falk, Gudrun Andrae
-
Patent number: 6620996Abstract: An insulator is formed on a substrate, on which numerous first conductivity-type crystalline semiconductor particles are deposited on and brought into contact with the substrate. A second conductivity-type semiconductor layer for forming a PN-junction between the layer and the crystalline semiconductor particles is formed over the crystalline semiconductor particles and the insulator. The second conductivity-type semiconductor layer comprises a semiconductor layer including a crystalline semiconductor and an amorphous semiconductor in a mixed manner.Type: GrantFiled: May 25, 2001Date of Patent: September 16, 2003Assignee: Kyocera CorporationInventors: Shin Sugawara, Takeshi Kyoda, Hisao Arimune
-
Patent number: 6613603Abstract: A photovoltaic device is provided which comprises a back reflection layer, a zinc oxide layer and a semiconductor layer stacked in this order on a substrate, wherein the zinc oxide layer contains a carbohydrate. The content of the carbohydrate is preferably in the range of from 1 &mgr;g/cm3 to 100 mg/cm3. Thereby, the zinc oxide layer can be formed without abnormal growth to have a rough surface to achieve sufficient optical confinement effect, and the photovoltaic device is improved in the durability and the photoelectric conversion efficiency.Type: GrantFiled: July 21, 1998Date of Patent: September 2, 2003Assignee: Canon Kabushiki KaishaInventor: Masafumi Sano
-
Patent number: 6610920Abstract: Plasma is generated from a plasma generating gas comprising an inert gas and hydrogen gas. Silicon material is passed through the plasma and heated so as to form a crystalline silicon particle containing hydrogen at a concentration of 1×1016-1×1020. A great number of the crystalline silicon particles of p-type or n-type are deposited on a substrate as the electrode of one side. An insulator is formed among the crystalline silicon particles on the substrate, and a n-type or p-type semiconductor layer is formed over the crystalline silicon particles, thereby fabricating a photoelectric conversion device. The photoelectric conversion device using the crystalline silicon particles exhibits high photoelectric conversion efficiency.Type: GrantFiled: September 26, 2001Date of Patent: August 26, 2003Assignee: Kyocera CorporationInventors: Shin Sugawara, Takeshi Kyoda, Hisao Arimune
-
Patent number: 6593164Abstract: A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.Type: GrantFiled: July 12, 2002Date of Patent: July 15, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hikaru Kobayashi, Hideomi Koinuma
-
Patent number: 6590150Abstract: A combination photovoltaic cell and RF antenna in a single unit performs the dual functions of transmitting and receiving RF signals to and from a transceiver and converting light waves to electric power to operate the transceiver. The photovaltaic cell is formed of semiconductor material laminated to a thin dielectric backing and electrically connected with the power circuit of the transceiver to supply electrical power thereto. The dielectric backing is bonded to a metallic substrate to provide a ground plane. A tuned shielded cable having a signal conductor is interconnected between the photovoltaic cell and the RF output stage of the transceiver, and the conductive shield of the cable is interconnected between the metallic substrate ground plane and the ground stage of the transceiver such that the photovoltaic cell transmits and receives RF signals to and from the transceiver and also converts light waves to electric power to operate the transceiver.Type: GrantFiled: May 11, 2001Date of Patent: July 8, 2003Inventor: Karl F. Kiefer
-
Publication number: 20030106581Abstract: A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 1 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.Type: ApplicationFiled: December 17, 2002Publication date: June 12, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Yuuji Mukai, Akihisa Yoshida
-
Publication number: 20030106580Abstract: A photo voltaic generator constructed on an SOI N− layer subdivided into a series of connected isolated tubs whereby the isolated tubs are subdivided by a matrix of trenched wells. A P+ junction is formed into the top surface of each well to define a photo voltaic generator junction for its respective well.Type: ApplicationFiled: December 3, 2002Publication date: June 12, 2003Applicant: International Rectifier Corp.Inventor: Steven C. Lizotte
-
Patent number: 6576831Abstract: Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.Type: GrantFiled: November 14, 2001Date of Patent: June 10, 2003Assignee: Deutsche Solar GmbHInventors: Peter Woditsch, Gunther Stollwerck, Christian Hässler, Wolfgang Koch
-
Publication number: 20030096098Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.Type: ApplicationFiled: October 5, 2001Publication date: May 22, 2003Inventors: Stanford R. Ovshinsky, Boil Pashmakov, David V. Tsu
-
Patent number: 6566594Abstract: In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked in turn on a transparent substrate. Then, an intermediate layer is provided between the second transparent conductive film and the p-type semiconductor layer so as to cover the first transparent conductive film and the second transparent conductive film.Type: GrantFiled: April 3, 2001Date of Patent: May 20, 2003Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuji Sano, Hisao Morooka, Kazuo Nishi
-
Patent number: 6548751Abstract: A thin-film flexible solar cell built on a plastic substrate comprises a cadmium telluride p-type layer and a cadmium sulfide n-type layer sputter deposited onto a plastic substrate at a temperature sufficiently low to avoid damaging or melting the plastic and to minimize crystallization of the cadmium telluride. A transparent conductive oxide layer overlaid by a bus bar network is deposited over the n-type layer. A back contact layer of conductive metal is deposited underneath the p-type layer and completes the current collection circuit. The semiconductor layers may be amorphous or polycrystalline in structure.Type: GrantFiled: June 25, 2001Date of Patent: April 15, 2003Assignee: SolarFlex Technologies, Inc.Inventors: Lawrence H. Sverdrup, Jr., Norman F. Dessel, Adrian Pelkus
-
Publication number: 20030062081Abstract: An ITO film as a transparent conductive film is formed on a semiconductor layer comprising an amorphous semiconductor or a microcrystalline semiconductor, a comb-like collecting electrode is formed on the ITO film, and a cover glass containing alkaline ions is placed on the ITO film and collecting electrode with a resin film made of EVA between them. The (222) plane orientation degree of the ITO film (transparent conductive film) is not less than 1.0, preferably not less than 1.2 and not more than 2.6, and more preferably not less than 1.4 and not more than 2.5. Alternatively, the transparent conductive film has an orientation of (321) planes on the boundary side with respect to the semiconductor layer and mainly an orientation of (222) planes in the remaining portion. When the total thickness of the ITO film is 100 nm, the (321)/(222) diffraction strength ratio in a 10 nm-thick portion on the semiconductor layer side is not less than 0.5 and not more than 2.5.Type: ApplicationFiled: September 17, 2002Publication date: April 3, 2003Applicant: SANYO ELECTRIC CO., LTD.Inventors: Eiji Maruyama, Toshiaki Baba
-
Patent number: 6541693Abstract: A solar cell module comprises a photovoltaic device having a flexible substrate. The photovoltaic device has a strain at least partly in the planar direction of the flexible substrate, and the strain is not greater than a critical value at which the photovoltaic device cracks. The solar cell module may further comprise a strain holding means for holding the strain. A deformable region where the photovoltaic device can be deformed when a region embracing the photovoltaic device is worked is defined so that a great variety of solar cell modules having a high reliability, also taking account of manufacture, can be designed with good efficiency.Type: GrantFiled: January 19, 1999Date of Patent: April 1, 2003Assignee: Canon Kabushiki KaishaInventors: Takeshi Takada, Akiharu Takabayashi, Masahiro Mori, Ayako Komori, Masaaki Matsushita
-
Patent number: 6538195Abstract: A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.Type: GrantFiled: May 31, 2001Date of Patent: March 25, 2003Assignee: Pacific Solar Pty LimitedInventors: Zhengrong Shi, Stuart Ross Wenham, Martin Andrew Green, Paul Alan Basore, Jing Jia Ji
-
Patent number: 6534334Abstract: An n layer, an i layer and a p layer are laminated, in that order, in a non-single-crystal thin film solar cell. The n layer, a part of the n layer, or the n layer and part of the i layer, is formed at a low substrate temperature T1. The i layer and the p layer; the residual n layer, i layer and p layer; or the residual i layer and p layer, are formed at a higher substrate temperature T2 than T1. More particularly, T1 is between about 70° C. and 120° C., and T2 is between about 120° C. and 450° C.Type: GrantFiled: June 18, 2001Date of Patent: March 18, 2003Assignee: Fuji Electric Corporate Research and Development, Ltd.Inventor: Toshiaki Sasaki
-
Patent number: 6531654Abstract: In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take place and decompose the material gas to form an amorphous semiconductor thin film on a desired substrate, the high-frequency power is applied changing its power density continuously or stepwise from a high power density to a low power density and thereafter again changing the power density continuously or stepwise from a low power density to a high power density, to form a semiconductor thin film made different in film quality in the direction of layer thickness while retaining the same conductivity type. This process enable formation of high-quality semiconductor thin films by plasma CVD.Type: GrantFiled: May 22, 2001Date of Patent: March 11, 2003Assignee: Canon Kabushiki KaishaInventors: Shuichiro Sugiyama, Masahiro Kanai, Takahiro Yajima
-
Patent number: 6525264Abstract: A thin-film solar cell module of a light transmission type includes a light-transmissive substrate; a front electrode layer; a rear electrode layer, and a photovoltaic conversion layer. The rear electrode layer, front electrode layer, and photovoltaic conversion layer are sequentially laminated on the light-transmissive substrate. A heat retention member covers the rear electrode layer, and a sealing layer is provided for sealing the rear electrode layer. In certain embodiments, the heat retention member has a light absorptance of 40% or more within a near-infrared wavelength range of 1,500 to 2,000 nm.Type: GrantFiled: July 11, 2001Date of Patent: February 25, 2003Assignee: Sharp Kabushiki KaishaInventors: Takashi Ouchida, Katsushi Kishimoto, Yasushi Fujioka
-
Patent number: 6521826Abstract: An n-type polysilicon thin film, an intrinsic polysilicon thin film and a p-type polysilicon thin film are formed on a transparent conductive film of a glass substrate by the plasma enhanced CVD method at a plasma excitation frequency of 81.36 MHz so as to obtain a photoelectric conversion layer. The n-type polysilicon thin film and the intrinsic polysilicon thin film are then formed so that the crystallization ratio of the n-doped layer located on the incident light side becomes equal to or greater than the crystallization ratio of the intrinsic layer. Thus, a thin film solar cell having an appropriate structure of a junction interface between the n-layer and the intrinsic layer is obtained.Type: GrantFiled: November 29, 2000Date of Patent: February 18, 2003Assignee: Sharp Kabushiki KaishaInventor: Kenji Wada
-
Patent number: 6521827Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.Type: GrantFiled: November 29, 2000Date of Patent: February 18, 2003Assignee: Sharp Kabushiki KaishaInventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
-
Patent number: 6518494Abstract: A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.Type: GrantFiled: August 22, 1996Date of Patent: February 11, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Munehiro Shibuya, Masatoshi Kitagawa, Yuuji Mukai, Akihisa Yoshida
-
Patent number: 6512171Abstract: A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impurities of 0.2 to 8 atom % and has a thickness of 10 to 200 nm.Type: GrantFiled: January 12, 2001Date of Patent: January 28, 2003Assignee: Sharp Kabushiki KaishaInventors: Takashi Inamasu, Masafumi Shimizu, Kenji Wada
-
Patent number: 6512170Abstract: The present invention provides a photoelectric conversion device that improves photoelectric conversion efficiency with the interaction between a transparent substrate with a transparent conductive film, an antireflection film, and a photoelectric conversion unit. The antireflection film contains fine particles having an average particle diameter of 0.01 to 1.0 &mgr;m and has an uneven surface derived from the fine particles. The glass sheet with a transparent conductive film has a light transmittance of 75% or more in the wavelength region of 800 nm to 900 nm. The photoelectric conversion unit includes at least a photoelectric conversion unit including a photoelectric conversion layer having a band gap of 1.85 eV or less.Type: GrantFiled: October 31, 2001Date of Patent: January 28, 2003Assignees: Nippon Sheet Glass Co., Ltd., Kaneka CorporationInventors: Masahiro Hirata, Tsuyoshi Otani, Yuko Tawada
-
Publication number: 20030005954Abstract: A semiconductor crystal substrate is fixed in a bent state to a support body. Preferably, the semiconductor crystal substrate is bonded to a transparent resin member provided between a surface cover member and a back cover member.Type: ApplicationFiled: July 2, 2002Publication date: January 9, 2003Inventors: Makiko Emoto, Akio Shibata
-
Publication number: 20020189664Abstract: In order to secure excellent short-circuit current and fill factor characteristics simultaneously, a thin film polycrystalline solar cell is provided which comprises a substrate, a first semiconductor layer provided on the substrate and comprised of Si highly doped with a conductivity-type controlling impurity, a second semiconductor layer provided on the first semiconductor layer and comprised of polycrystalline Si slightly doped with a conductivity-type controlling impurity of the same conductivity type as that of the first semiconductor layer, and a third semiconductor layer provided on the second semiconductor layer and highly doped with a conductivity-type controlling impurity of a conductivity type opposite to that of the impurities for the doping of the first and the second semiconductor layers, wherein crystal grains grown from crystal nuclei generated in the first semiconductor layer are continuously grown to form the first and the second semiconductor layers, are also horizontally grown to contact nType: ApplicationFiled: March 15, 2002Publication date: December 19, 2002Inventor: Shunichi Ishihara
-
Publication number: 20020185171Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.Type: ApplicationFiled: June 7, 2002Publication date: December 12, 2002Inventors: Chorng-Jye Huang, Lee-Ching Kuo, Jyi-Tyan Yeh, Chien-Sheng Huang, Leo C.K. Liau, Shih-Chen Lin, Cheng-Ting Chen, Feng-Cheng Jeng
-
Publication number: 20020185172Abstract: A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.Type: ApplicationFiled: July 12, 2002Publication date: December 12, 2002Applicant: MATSUSHITA ELECTRICAL INDUSTRIAL CO., LTD.Inventors: Hikaru Kobayashi, Hideomi Koinuma
-
Patent number: 6488995Abstract: Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the film is conducted in such a manner that the residence time, &tgr; (ms) of the raw gas in a film deposition chamber, which is defined as &tgr; (ms)=78.9×V×P/M, in which V is a volume (cm3) of the deposition chamber, P is a deposition pressure (Torr), and M is a total flow rate (sccm) of the raw gas, satisfies &tgr;<40. The method permits the formation of a good-quality microcrystalline silicon film at low cost.Type: GrantFiled: February 16, 1999Date of Patent: December 3, 2002Assignee: Canon Kabushiki KaishaInventors: Tomonori Nishimoto, Masafumi Sano
-
Patent number: 6483021Abstract: The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.Type: GrantFiled: February 25, 1999Date of Patent: November 19, 2002Assignee: Canon Kabushiki KaishaInventor: Keishi Saito
-
Publication number: 20020166581Abstract: A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.Type: ApplicationFiled: January 28, 2002Publication date: November 14, 2002Inventors: Takaharu Kondo, Masafumi Sano, Koichi Matsuda, Makoto Higashikawa
-
Patent number: 6479744Abstract: In a photovoltaic device module comprising a plurality of photovoltaic devices connected electrically through a metal member, an insulating member is so provided as to avoid contact between an edge portion of the photovoltaic device and the metal member. This can provide a photovoltaic device module which is inexpensive, easy to operate and highly reliable.Type: GrantFiled: September 27, 2000Date of Patent: November 12, 2002Assignee: Canon Kabushiki KaishaInventors: Koji Tsuzuki, Tsutomu Murakami, Yoshifumi Takeyama, Koichi Shimizu
-
Patent number: 6472248Abstract: A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.Type: GrantFiled: January 12, 2001Date of Patent: October 29, 2002Assignee: Canon Kabushiki KaishaInventors: Atsushi Shiozaki, Masafumi Sano, Toshimitsu Kariya, Takaharu Kondo, Makoto Higashikawa, Koichi Matsuda
-
Patent number: 6472296Abstract: A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.Type: GrantFiled: July 26, 2001Date of Patent: October 29, 2002Assignee: Canon Kabushiki KaishaInventors: Yasushi Fujioka, Shotaro Okabe, Masahiro Kanai, Akira Sakai, Tadashi Sawayama, Yuzo Koda, Takahiro Yajima
-
Patent number: 6465727Abstract: In a photovoltaic element sequentially comprising at least an amorphous semiconductive layer of one conductivity type and an amorphous semiconductive layer of the other conductivity type on a surface of a transparent conductive film, the transparent conductive film includes a surface region having a lower crystalline property on a surface side than that in an inner portion and the amorphous semiconductive layer of one conductivity type is formed on the surface region. An excellent ohmic property is obtained between the transparent conductive film and the amorphous semiconductive layer of one conductivity type.Type: GrantFiled: May 25, 2001Date of Patent: October 15, 2002Assignee: Sanyo Electric Co., Ltd.Inventors: Eiji Maruyama, Takeshi Nakashima
-
Publication number: 20020139416Abstract: The present invention provides a multi-element polycrystal having a non-uniform microscopic distribution of the elements, by cooling a melt containing a plurality of elements at a controlled cooling rate. The present invention further provides a polycrystal for use in a solar cell capable of absorbing sunlight more efficiently at low cost, a solar cell using the polycrystal and methods of forming the polycrystal and the solar cell.Type: ApplicationFiled: March 26, 2002Publication date: October 3, 2002Inventors: Kazuo Nakajima, Noritaka Usami, Kozo Fujiwara
-
Publication number: 20020139417Abstract: Disclosed is a solar cell for use in space, comprising compound semiconductors used as photovoltaic conversion material. The solar cell comprises a cover glass used for improving the radiation tolerance as a substrare for thin film deposition. The solar cell further comprises a crystalline thin film of the compound semiconductors directly formed on a surface of the cover glass for acting as the photovoltaic conversion material. The crystalline thin film of compound semiconductors is formed using a metal organic chemical vapor deposition system.Type: ApplicationFiled: March 25, 2002Publication date: October 3, 2002Inventors: Masayoshi Umeno, Tetsuo Soga, Mitsuru Imaizumi
-
Patent number: 6459034Abstract: A multi-junction solar cell comprising: a support substrate having a first electrode layer, a plurality of photoelectric conversion devices and a second electrode layer stacked thereon, and an intermediate layer having an uneven surface being sandwiched between any two of the photoelectric conversion devices stacked adjacent each other.Type: GrantFiled: May 24, 2001Date of Patent: October 1, 2002Assignee: Sharp Kabushiki KaishaInventors: Masahiko Muramoto, Takashi Hayakawa
-
Patent number: 6459035Abstract: There is described a colored photovoltaic cell (1) with a semiconductor, preferably silicon, which has high efficiency and a pleasing colored appearance, allowing it to be used as a dial for a watch or another electronic apparatus powered by the cell. The cell includes a reflective metal substrate (2) serving as the bottom electrode, a stack of hydrogenated amorphous silicon layers forming p-i-n junctions (8), and a transparent top electrode (9). The latter may be coated with a layer (16) of slightly diffusing lacquer, which may be colorless or colored. The respective thicknesses e1 of the top electrode and e2 of the silicon are combined as a function of the refractive indices of the materials so as to produce an interferential reflection in a predetermined reflection spectrum.Type: GrantFiled: December 18, 2000Date of Patent: October 1, 2002Assignee: Asulab S.A.Inventors: Yvan Ziegler, Diego Fischer, Eric Saurer, René Viennet
-
Publication number: 20020134425Abstract: A thin-film solar cell comprises a set of a transparent conductive layer and a photoelectric conversion layer laminated in this order on a substrate, wherein the photoelectric conversion layer is made of a p-i-n junction, the i-layer is made of a crystalline layer and the transparent conductive layer is provided with a plurality of holes at its surface of the side of the photoelectric conversion layer, each of said holes having irregularities formed on its surface.Type: ApplicationFiled: January 10, 2002Publication date: September 26, 2002Inventors: Hiroshi Yamamoto, Kenji Wada
-
Patent number: 6455766Abstract: A device, having circuits formed thereon, comprises a circuit including a frequency generator for generating a detectable radio frequency energy when powered and a power generator, coupled to the frequency generator, for generating power when exposed to light.Type: GrantFiled: April 11, 2001Date of Patent: September 24, 2002Assignee: International Business Machines CorporationInventors: Donald J. Cook, Edward J. Nowak, Minh H. Tong
-
Patent number: 6444899Abstract: It is achieved to provide a solar cell in which stability at a connection portion between a circuit substrate of an electric instrument and a rear electrode, and reliability against electrostatic damage are improved, and also to provide a method of fabricating the same. A rear electrode is formed of a material containing carbon as a main ingredient. In formation of the rear electrode, a thermosetting conductive carbon paste is used and the formation is made by a printing method. Further, when the resistance values of the transparent electrode layer and the rear electrode layer are made the same level and are balanced, the resistance against electrostatic damage can be remarkably improved.Type: GrantFiled: December 21, 2000Date of Patent: September 3, 2002Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuichi Kubota, Kazuo Nishi
-
Publication number: 20020117199Abstract: A continuous process for depositing a thin film layer or layers on a substrate during the production of thin film photovoltaic devices comprising moving the substrate at an elevated temperature in a reduced pressure environment past one or more sources of material to be deposited thereby forming on the substrate at least one thin film of the material from the source.Type: ApplicationFiled: February 6, 2002Publication date: August 29, 2002Inventor: Robert S. Oswald
-
Patent number: 6441300Abstract: In a solar battery module of the present invention, a transparent material is provided on the side opposite the light incident side of a solar cell portion formed on a transparent substrate. The solar battery module further includes a printed matter having a prescribed pattern between the solar cell portion and the transparent material. Thus, by integrating a printed matter having for example an illustration, picture, or character in the solar module, the printed matter can be visually recognized from the back or front side, whereby an appearance of the module can be improved.Type: GrantFiled: May 4, 2001Date of Patent: August 27, 2002Assignee: Sharp Kabushiki KaishaInventors: Hitoshi Sannomiya, Takashi Ouchida, Hajime Saitoh
-
Patent number: 6437231Abstract: An integrated thin-film solar battery having a plurality of unit elements connected in series includes a substrate, a plurality of spaced apart first electrode layers formed on the substrate; a plurality of semiconductor layers disposed on said plurality of first electrode layers in such a manner that each of the semiconductor layers is formed on two adjacent first electrodes and has a connection opening located on one of the two first electrodes, an electrically conductive layer formed on each of the semiconductor layers except on the region of the connection opening, and a second electrode layer disposed on each of the electrically conductive layers such that the second electrode layer is electrically connected to one of the two adjacent first electrode layers through the connection opening, to form a region interposed between the second electrode layer and the other first electrode layer as the unit element.Type: GrantFiled: May 24, 2001Date of Patent: August 20, 2002Assignee: Kanegafuchi Kagaku Kogyo Kabushiki KaishaInventors: Shinichiro Kurata, Katsuhiko Hayashi, Atsuo Ishikawa, Masataka Kondo
-
Patent number: 6437233Abstract: A solar cell comprises a superstrate formed from a material that is transparent to light, a first layer formed of delta doped silicon, a plurality of layers formed from semiconductor materials, each characterized by multi-quantum wells and multiple band gaps, a first semiconductor layer having a band gap energy state that is the smallest, the last semiconductor layer having-a band gap that is the largest, and the intermediate semiconductor layers having band gaps transitioning from the smallest to the largest, a second layer overlying the semiconductor layers and formed of delta doped silicon, an n-cap layer formed on the second delta doped layer, and a metal layer formed on the n-cap layer and serving to reflect light into the semiconductor.Type: GrantFiled: July 25, 2000Date of Patent: August 20, 2002Assignee: TRW Inc.Inventors: Dean Tran, George J. Vendura, Jr., William L. Jones, Edward A. Rezek
-
Patent number: 6433269Abstract: A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.Type: GrantFiled: October 19, 2000Date of Patent: August 13, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hikaru Kobayashi, Hideomi Koinuma
-
Publication number: 20020104562Abstract: A solar cell is manufactured by bringing a front side of a semiconductor crystal substrate into contact with an electrolytic liquid containing a fluoride, placing an electrode in the electrolytic liquid, passing a current between the electrode and the semiconductor crystal substrate and applying light to the semiconductor crystal substrate to generate pairs of holes and electrons. Etching of the substrate proceeds by combining the holes with ions in the front side of the semiconductor crystal substrate which is held in contact with the electrolytic liquid, thereby forming at least one surface irregularity structure thereon.Type: ApplicationFiled: February 6, 2002Publication date: August 8, 2002Inventors: Makiko Emoto, Kentaro Fujita, Akio Shibata, Hiroshi Yokota