Abstract: Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.

Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

Abstract: Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids.

Abstract: A photovoltaic device is described. The photovoltaic device comprises an organic-based antireflection layer. A method of making a photovoltaic device is also described.

Abstract: A sealed photovoltaic module comprising: a first substrate, a second substrate, at least one photovoltaic element positioned between the first and second substrates, and an edge seal between the first and second substrates positioned at or near an edge of and between the substrates, the edge seal comprising a moisture resistive material.

Abstract: A bifacial thin film solar cell and method for fabricating the same are provided. The solar cell has a first and a second transparent substrates, a first and a second solar cell modules, and an insulating layer. The first solar cell module is formed on the first transparent substrate, and has a metal layer as one of the electrodes of the first solar cell module and as a light reflection layer. The insulating layer is formed on the metal layer of the first solar cell module. The second solar cell module is formed between the insulating layer and the second transparent substrate.

Abstract: A photovoltaic device capable of improving an output characteristic is obtained. This photovoltaic device includes a first conductivity type crystalline silicon region, a second conductivity type first noncrystalline silicon layer and a substantially intrinsic second noncrystalline silicon layer arranged between the crystalline silicon region and the first noncrystalline silicon layer, and the crystalline silicon region has an aperiodic corrugated shape having a height of not more than 2 nm on the interface between the same and the second noncrystalline silicon layer.

Abstract: Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and perhaps, increased conversion efficiency in the ultraviolet through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs.

Abstract: The present invention provides an encapsulating material for a solar cell, which is easy to prepare a solar cell module, and excellent in processability, insulating property, non-corrosion property, transparency, heat resistance, flexibility and the like, and a solar cell module prepared by using the same. The encapsulating material for a solar cell is one consisting of a cross-linkable resin composition (A) containing an ethylene-(meth)acrylic ester copolymer as a base polymer, an organic peroxide and a crosslinking aid wherein the decomposition temperature (temperature for a half-life period of one hour) of the organic peroxide is equal to or lower than 150° C., and total compounding amount of the organic peroxide and the crosslinking aid, is in a range of from 0.5 to 5 parts by weight per 100 parts by weight of the base polymer, and compounding ratio of the organic peroxide and the crosslinking aid (organic peroxide/crosslinking aid) is in a range of from 1/5 to 1/0.1, in weight ratio.

Abstract: The invention relates to a two-step method for production of low temperature mechanically stable and electrically efficient nanoporous electrodes, in particular titania nanoporous electrodes, for photoelectrochemical applications. The method of the invention comprises electrophoretic deposition (EPD) of nanosize titania crystals from a stable suspension containing thereof on a conductive substrate, and formation of mechanical and electrical contact between them. The invention further relates to nanoporous electrodes obtained by this method and to dye sensitized solar cells (DSSCs) fabricated therefrom.

Abstract: The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.

Abstract: A solar cell and a method of manufacturing the same are discussed. The solar cell includes an amorphous silicon layer, and a density of Si—Si bonds in the amorphous silicon layer is 7.48×1022/cm3 to 9.4×1022/cm3. The method includes forming an electrode on a substrate and depositing amorphous silicon on the substrate in an atmosphere in which a ratio of an amount of hydrogen (H2) gas to an amount of silane (SiH4) gas is 15:1 to 30:1 to form an amorphous silicon layer on the substrate.

Abstract: In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.

Abstract: A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.

Abstract: A solar cell and a method for manufacturing the same is disclosed, wherein the solar cell comprises a first cell comprised of a semiconductor wafer with a PN structure; a second cell comprised of a thin film semiconductor layer with a PIN structure, formed on one surface of the first cell; a first electrode layer formed on one surface of the second cell; and a second electrode layer formed on the other surface of the first cell. Unlike the related art solar cell, the solar cell according to the present invention can absorb the light of long-wavelength range in the first cell, and the light of short-wavelength range in the second cell. As a result, it is possible for the solar cell according to the present invention to absorb the light of all ranges, thereby realizing the high efficiency of 20% or above. Also, the entire process time becomes shortened since there is no requirement for the procedure of forming the silicon thin film for a long period of time.

Abstract: The present invention provides a photovoltaic device capable of keeping reduction of the yield in modularization in check. This photovoltaic device comprises a transparent conductive film, and a collector which is formed on the surface of the transparent conductive film so as to be in partial contact with a semiconductor layer.

Abstract: Photovoltaic cells and methods for the manufacture of photovoltaic cells are described. Operative layers of the photovoltaic cell are deposited onto a superstrate having a plurality of spaced ramps, allowing for the individual cells to be connected in series with minimal loss of the efficiency due to dead space between the cells.

Abstract: A power generating turbine includes a rotary shaft having an axis of rotation, a magnet supported by and spaced outwardly from the rotary shaft and a conductive coil. The coil is located outwardly from the magnet and surrounds the magnet and the shaft, but is sufficiently close to the magnet such that rotary movement of said magnet induces current flow in the coil.

Abstract: A system and method for lower cost, solar thermal generation includes a thermal input block, and an energy storage block.

Abstract: The present invention relates to improved HIT type or polysilicon emitter solar cells. According to certain aspects, the invention includes forming a masking oxide layer on the front and back of the cell and then patterning holes in the masking oxide. A HIT cell structure or polysilicon emitter solar cell structure is then formed over the patterned oxide, creating the cell junction only in the areas where holes have been cut. Benefits of the invention include that it provides a controlled interface for the HIT cell through insertion of a thin tunnel oxide. Moreover, the tunnel oxide prevents epitaxial growth of amorphous silicon, allowing it to remain amorphous for the optimum band structure. Still further, it provides a layer to protect the surface from plasma damage during deposition of the a-Si layer. Further, it may be used in conjunction with a point contact structure to further increase efficiency.

Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

Abstract: In some embodiments, a method of forming a photovoltaic cell includes (1) forming a cleave plane in a donor body so as to define a lamina to be bonded to a receiver element and exfoliated from the donor body; (2) prior to bonding, pre-heating the donor body without the receiver element to a temperature of greater than about 200° C. for a first time period that is less than a time period required for exfoliation of the lamina from the donor body; (3) cooling the donor body after pre-heating the donor body; (4) bonding the donor body to the receiver element; and (5) heating the bonded donor body and receiver element for a second time period so as to complete the exfoliation of the lamina from the donor body. Numerous other aspects are provided.

Abstract: An integrated photoelectrochemical (PEC) cell generates hydrogen and oxygen from water while being illuminated with radiation. The PEC cell employs a liquid electrolyte, a multi-junction photovoltaic electrode, and a thin ion-exchange membrane. A PEC system and a method of making such PEC cell and PEC system are also disclosed.

Abstract: A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Abstract: A present method of manufacturing a silicon-based thin-film photoelectric conversion device is characterized in that a double pin structure stack body is formed by successively forming, in an identical plasma CVD film deposition chamber, a first p-type semiconductor layer, an i-type amorphous silicon-based photoelectric conversion layer, a first n-type semiconductor layer, a second p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer, and a second n-type semiconductor layer on a transparent conductive film formed on a substrate, and the first p-type semiconductor layer, the i-type amorphous silicon-based photoelectric conversion layer and the first n-type semiconductor layer are formed under such conditions that a film deposition pressure in the plasma CVD film deposition chamber is not lower than 200 Pa and not higher than 3000 Pa and power density per unit electrode area is not lower than 0.01 W/cm2 and not higher than 0.3 W/cm2.

Abstract: A photovoltaic apparatus includes a p-layer having a bandgap greater than about 2 eV, an n-layer having a bandgap greater than about 2 eV, and an absorber layer between the p-layer and the n-layer, wherein the absorber layer includes SiGe. The ratio of Si to Ge in the absorber layer can be selected to obtain an absorber bandgap between about 1.1 and about 1.4 eV.

Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

Abstract: A highly-efficient photoelectric conversion device is provided without complicating the manufacturing process. The photoelectric conversion device includes a unit cell having a semiconductor junction, in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer including a first semiconductor region having a larger proportion of a crystalline semiconductor than an amorphous semiconductor and a second semiconductor region having a larger proportion of an amorphous semiconductor than a crystalline semiconductor and including both a radial crystal and a crystal having a needle-like growing end in the amorphous semiconductor, and a second impurity semiconductor layer having a conductivity type opposite to the conductivity type of the first impurity semiconductor layer are stacked in this order.

Abstract: A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.

Abstract: Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which polycrystalline silicon is deposited, from the initial stage of heating, the deposition rate is high and the core member seed rod can be used repeatedly. The method for deposition of high-purity polycrystalline silicon, at a high temperature, onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas supplied thereto, is characterized in that the seed rod is a member made from an alloy having a recrystallization temperature of 1200° C. or higher. It is preferable that the alloy member is of an alloy of Re—W, W—Ta, Zr—Nb, titanium-zirconium, or a carbon-added molybdenum (TZM) in the form of a wire member having a diameter of at least 0.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate, at least one emitter layer on the substrate, at least one first electrode electrically connected to the at least one emitter layer, and at least one second electrode electrically connected to the substrate. At least one of the first electrode and the second electrode is formed using a plating method.

Abstract: A method of fabricating a solar cell includes: sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate; forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer; heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer; and sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.

Abstract: The invention relates to a coating which has been applied to a substrate, comprising at least a first film and a second film which have been applied on top of each other and each comprise a transparent conducting oxide and an electron donor, wherein the second film comprises relatively at least 10 percent less electron donor than the first film. The invention also relates to a solar cell comprising a coating according to the invention. The invention further relates to a method for applying the coating according to the invention to a substrate, wherein at least a first and a second mixture which each comprise one or more precursors for a transparent conducting oxide and an electron donor are applied to the substrate, wherein the second mixture is composed such that relatively at least 10 percent less electron donor is incorporated in the film compared with the film deposited by the first mixture.

Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.

Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.

Abstract: Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.

Abstract: The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.

Abstract: A solar cell is disclosed. The solar cell includes an n-type or p-type amorphous silicon layer, a transparent electrode, and a metal buffer layer between the transparent electrode and the amorphous silicon layer. The metal buffer layer contains at least one of In, Sn, B, Al, Ga, and Zn. When the transparent electrode contains indium tin oxide (ITO), the metal buffer layer contains at least one of In and Sn. When the transparent electrode contains zinc oxide, the metal buffer layer contains at least one of B, Al, Ga, and Zn.

Abstract: Aluminoborosilicate glasses which may be useful in photovoltaic, photochromic, electrochromic, or Organic Light Emitting Diode (OLED) lighting applications are described.

Abstract: A photoelectric conversion device includes one or more unit cells between a first electrode and a second electrode, in which a semiconductor junction is formed by sequentially stacking: a first impurity semiconductor layer of one conductivity type; an intrinsic non-single-crystal semiconductor layer including an NH group or an NH2 group; and a second impurity semiconductor layer of opposite conductivity type to the first impurity semiconductor layer. In the non-single-crystal semiconductor layer of a unit cell on a light incident side, the nitrogen concentration measured by secondary ion mass spectrometry is 5×1018/cm3 or more and 5×1020/cm3 or less and oxygen and carbon concentrations measured by secondary ion mass spectrometry are less than 5×1018/cm3.

Abstract: A method for fabricating a solar cell is described. The method includes first providing a substrate having a dielectric layer disposed thereon. A pin-hole-free masking layer is then formed above the dielectric layer. Finally, without the use of a mask, the pin-hole-free masking layer is patterned to form a patterned pin-hole-free masking layer.

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract: A semiconductor device is provided in accordance with an exemplary embodiment. The semiconductor device includes a semiconductive layer disposed over a multi-layer substrate. The multi-layer substrate includes a plurality of dissimilar regions, one of which is an inner magnetic region and the remainder of the multi-layer substrate is thermally symmetrical about the inner magnetic region.

Abstract: A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap, high conductivity, and resistance to attack by oxygen.

Abstract: A solar cell is provided in which an amorphous semiconductor layer (15) is located on a back surface of a crystalline silicon structure to form a heterojunction. A first contact structure contacts the crystalline layer (14) and a second contact structure contacts the amorphous layer (15). A method of forming the heterojunction solar cell is also provided in which a doped amorphous semiconductor layer (15) is formed on an oppositely doped crystalline silicon layer (14), to form a rear surface heterojunction with the crystalline silicon layer (14). Subsequently a rear surface contact (16) is formed, to contact to the amorphous semiconductor layer (15), and a heavily doped region (13) of the same conductivity type as the crystalline silicon layer (14) is formed in contact with the crystalline silicon layer (14) wherever metal contacts (10) are required contact the crystalline silicon layer (14) to facilitate contact with the subsequently formed metal contact (10).

Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.

Abstract: A method for producing a thin film titanium dioxide is disclosed. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form anatase titanium dioxide, which is deposited on a substrate within the sputtering chamber.