Abstract: A surface of a multicrystalline silicon substrate is etched with an alkaline aqueous solution in a condition so that a surface area-to-planar surface area ratio R is smaller than 1.1. A multiplicity of fine textures are formed over the irregularities by dry etching. This allows fine textures to be formed uniformly, and a solar cell with high efficiency can thus be produced.

Abstract: A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) ?/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) ?/second for the a-SiGe:H intrinsic layer.

Abstract: The invention relates to a multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate (a), which is configured for illuminating from the substrate side, and to a production method for the cell. Said solar cell comprises a laser-crystallized multicrystalline silicon layer (b1, b2), whose lower layer region (b1), which is situated on the substrate (a) and provided as a nucleation layer and, at the same time, as a lower transparent electrode, is p-doped (alternatively, n-doped). The silicon layer's second layer region (b2), which faces away from the substrate is p-doped (alternatively, n-doped) less than the nucleation layer and serves as an absorber layer. The edge lengths of the crystallites in the multicrystalline layer (b1, b2) are longer than the layer is thick.

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Abstract: A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.

Abstract: A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

Abstract: A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.

Abstract: A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impurities of 0.2 to 8 atom % and has a thickness of 10 to 200 nm.

Abstract: Known methods of producing large-surface integrated thin-film solar modules with an amorphous, poly- or microcrystalline absorber layer always comprise division and conversion structuring processes which can cause instabilities in the structuring and which are relatively expensive. According to the inventive method which can be used to fabricate substrate solar cells and superstrate solar cells, the mask which is used provides for structuring itself during the deposition of layers for the rear electrode and the absorber layer through its geometrical form. The use of a mask which can be reused as an independent element after use in this method allows for a relatively free range of possible geometric forms. This also makes possible applications inside and outside of buildings, including in the area of a window, from an esthetic and informal point of view.

Abstract: A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

Abstract: In a photovoltaic element according to the present invention, a first transparent conductive film, a second transparent conductive film, a p-type semiconductor film, an intrinsic semiconductor layer, a n-type semiconductor layer and a backside electrode are stacked in turn on a transparent substrate. Then, an intermediate layer is provided between the second transparent conductive film and the p-type semiconductor layer so as to cover the first transparent conductive film and the second transparent conductive film.

Abstract: The invention pertains to a method of manufacturing a photovoltaic foil comprising a TCO layer, a photovoltaic layer, and a back electrode, which method comprises the following steps: providing a conductive temporary substrate; applying a TCO layer on the temporary substrate; applying a photovoltaic layer on the TCO by means of electrodeposition, with the current during the electrodeposition being supplied at least through the temporary substrate; applying a back electrode; if so desired, applying a permanent substrate; removing the temporary substrate. The crux of the invention is that the unit of the conductive temporary substrate and the TCO functions as electrode during the electrodeposition of the photovoltaic layer. Because of this, the rate of deposition of the photovoltaic layer can be increased compared with that of the prior art. Furthermore, a photovoltaic layer with a more homogenous layer thickness is obtained.

Abstract: A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.

Abstract: In a solar cell module-mounting structure, a solar cell module 101 is fixed on one surface of a plate-shaped member 102, the plate-shaped member 102 is placed on an installation surface so that one side of the plate-shaped member is in contact with the installation surface, a surface of the plate-shaped member 102 opposite to the solar cell module-fixing surface is in contact with a first support member 103, and out of surfaces including the one side of the plate-shaped member 102, at least a part of the surfaces in no contact with the first support member 103 is in contact with a second support member 103, thereby effectively preventing a solar cell module-mounting rack from being moved by a wind load.

Abstract: A photovoltaic device including a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which an oxygen atom concentration and/or a carbon atom concentration has a maximum peak in the vicinity of a p/n interface between the plurality of unit devices.

Abstract: A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.

Abstract: A solar battery cell of a serial stacked structure, increasing scattering of light, exhibiting good power-generating efficiency per unit area, and ensuring high reliability and a large yield in the manufacturing process, is provided. The solar battery cell includes a plurality of power-generating regions connected in series, each having insulative transparent semiconductor, front electrode, intermediate transparent conductive film, photoelectric conversion layer formed of stacked semiconductor films, and back electrode, and a contact line electrically connecting the front electrode and the back electrode of the neighboring respective power-generating regions. One power-generating region has at least two photoelectric conversion layers with the intermediate transparent conductive films sandwiched therebetween. At least one member of nonconductor and/or semiconductor is provided between the intermediate transparent conductive film and the contact line to prevent direct contact thereof.

Abstract: The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

Abstract: This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same.

Abstract: A thin emitter wrap-through solar cell and method for making a thin emitter wrap-through solar cell. The cell preferably includes a silicon wafer substrate having a thickness of less than 280 microns. The p-type area on the back side of the cell is minimized, which maximizes the collector area and reduces or eliminates stress due to passivation of the p-type area, which is required for conventional solar cells. The efficiency of the cell of the present invention peaks for a much smaller thickness than that for conventional cells. Thus thin wafers of inexpensive, lower quality silicon may be used without a significant efficiency penalty, providing a large cost advantage over other solar cell configurations. Vias through the substrate, which connect emitter layers on the front and back surfaces of the substrate, may consist of holes which are doped, or alternatively may be solid doped channels formed by migration of a solvent, which preferably contains a dopant, caused by a gradient-driven process.

Abstract: A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.

Abstract: A solar battery module comprising: a plurality of solar battery cells each including a crystalline semiconductor substrate; and a wiring member that connects the solar battery cells to one another, wherein the wiring member contains a first substance having a linear expansion coefficient closer to that of the substrate constituting each of the solar battery cells than Cu.

Abstract: A stacked photoelectric conversion device comprising at least two photoelectric conversion element layers sandwiched between a first electrode layer and a light receiving second electrode layer, and at least one intermediate layer sandwiched between any two of said at least two photoelectric conversion element layers, wherein the intermediate layer has uneven surfaces on a light receiving side and a light outgoing side, the uneven surface on the latter having a greater average level difference than that on the former.

Abstract: In a thin film solar battery module, a flat glass substrate with non-monocrystal silicon type thin film solar cells formed thereon, a space layer, and a chilled figured glass are sequentially stacked in this order. The chilled figured glass has fine unevenness on at least its incident side surface to achieve an anti-glare effect.

Abstract: In a method for forming a contact on semiconductor surface, a crystalline silicon surface is first oxidized, following which an aluminium layer is deposited onto the oxide layer. A layer of amorphous silicon is then deposited onto the aluminium layer. The structure is then heated to a temperature below the aluminium/silicon eutectic temperature to locally reduce the oxide layer in regions where the quality/density of the oxide layer is lower. Simultaneously, the amorphous silicon penetrates into the aluminium layer, in which it has a high mobility. With continued heating, the aluminium penetrates completely through the oxide layer in localized regions, exposing the crystalline silicon surface. The exposed silicon surface provides a sight for nucleating epitaxial growth, which occurs rapidly as silicon within the aluminium continuously feeds the solid phase epitaxial growth process.

Abstract: A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15° to 55° within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.

Abstract: There is disclosed a photovoltaic power generating structure in which a solar cell module is arranged on a base member, wherein a closed space portion cut off from the air is provided between the base member and the solar cell module. Thus, there can be provided a photovoltaic power generating structure which can be easily constructed at a low installation cost, can maintain a good output as a photovoltaic power generating system, is excellent in environmental resistance, and can improve fireproofness.

Abstract: A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.

Abstract: A photoelectric conversion device comprising a semiconductor and an organic electrically conducting agent, wherein the organic electrically conducting agent exhibits a melting temperature Tm which is lower than the operation temperature of the photoelectric conversion device.

Abstract: To improve the conversion efficiency of a power converter in a solar cell module in which a solar cell module main body containing a solar cell is integrated with a power converter for converting the output power from the solar cell module main body, a material having small thermal conductivity is used as a member (205) of a protective case for protecting the power converter to be fixed to the solar cell module main body containing the solar cell, thereby preventing easy conduction of heat from the solar cell module main body heated to high temperatures to a power conversion circuit (201). A material having large thermal conductivity is used as a member (206) of a protective case for fixing the power conversion circuit (201), thereby allowing easy radiation of heat generated in the power conversion circuit (201).

Abstract: This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Abstract: A solar cell structure includes a solar cell that produces a voltage when illuminated, and a discrete amorphous silicon by-pass diode. A first by-pass diode terminal of the amorphous silicon by-pass diode is electrically connected to a first side of an active semiconductor structure of the solar cell, and a second by-pass diode terminal of the amorphous silicon by-pass diode is electrically connected to a second side of the active semiconductor structure. Alternatively, the first by-pass diode terminal of the amorphous silicon by-pass diode may be electrically connected to the first side of the active semiconductor structure of the solar cell, and the second by-pass diode terminal of the amorphous silicon by-pass diode may be electrically connected to a second side of the active semiconductor structure of another solar cell.

Abstract: The disclosure describes an economical and environmentally benign method to recover crystalline silicon metal kerf from wiresaw slurries and to shape and sinter said recovered crystalline silicon kerf into thin-layer PV cell configurations with enhanced surface texture for metallization and reduced optical reflection losses.

Abstract: A thin-film solar cell comprises a set of a transparent conductive layer and a photoelectric conversion layer laminated in this order on a substrate, wherein the photoelectric conversion layer is made of a p-i-n junction, the i-layer is made of a crystalline layer and the transparent conductive layer is provided with a plurality of holes at its surface of the side of the photoelectric conversion layer, each of said holes having irregularities formed on its surface.

Abstract: A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

Abstract: A solar cell structure includes a solar cell having a front side and a back side and an active semiconductor structure. The solar cell produces a voltage when the front side is illuminated. The solar cell is protected by a by-pass diode structure including a by-pass diode positioned at the back side of the solar cell. A first electrical interconnection structure extends between the back side of the solar cell and the first diode terminal, and a second electrical interconnection structure extends between the front side of the solar cell and the second diode terminal. An entire length of the second electrical interconnection structure contacts the solar cell.

Abstract: The present invention provides a photoelectric conversion device that improves photoelectric conversion efficiency with the interaction between a transparent substrate with a transparent conductive film, an antireflection film, and a photoelectric conversion unit. The antireflection film contains fine particles having an average particle diameter of 0.01 to 1.0 &mgr;m and has an uneven surface derived from the fine particles. The glass sheet with a transparent conductive film has a light transmittance of 75% or more in the wavelength region of 800 nm to 900 nm. The photoelectric conversion unit includes at least a photoelectric conversion unit including a photoelectric conversion layer having a band gap of 1.85 eV or less.

Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.

Abstract: A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

Abstract: The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1×1018 atom/cm3 to 1×1020 atom/cm3, thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability.

Abstract: A photoelectric conversion device comprising a semiconductor and an organic electrically conducting agent, wherein the organic electrically conducting agent exhibits a melting temperature Tm which is lower than the operation temperature of the photoelectric conversion device.

Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.

Abstract: There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a microcrystalline silicon body. The deposition gas and the conversion gas are subjected to a pulsed electromagnetic radiation to effectuate deposition and conversion.

Abstract: This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.

Abstract: If an inverter is merely attached to the back side of a solar battery module, the inverter becomes an obstacle to transport and installation, it may be broken if it strikes a building structure at the time of installation and it may malfunction owing to impact with an object. Accordingly, a weather-resistant film, a first filler, a solar battery element, a second filler and a back reinforcing material are stacked in the order mentioned and the fillers are melted using a vacuum laminator to thereby seal the solar battery element in resin between the back reinforcing material and weather-resistant film. At this time an inverter is placed on the surface of the back reinforcing material that opposes the solar battery element.

Abstract: An integrated thin-film photoelectric conversion module includes a multi-layered film including a first electrode layer, a semiconductor layer and a second electrode layer stacked on a main surface of a substrate. The multi-layered film includes a cell region including a plurality of photoelectric conversion cells connected in series, a bypass diode region and a connection region. The connection region does not connect the bypass diode to the cell during reverse bias treatment of the cell and the bypass diode, while the connection region connects the bypass diode in antiparallel to at least one of the plurality of cells connected in series after the reverse bias treatment.

Abstract: A thin film polycrystalline solar cell which includes a substrate, a first semiconductor layer provided on the substrate and including Si highly doped with a conductivity-type controlling impurity, a second semiconductor layer provided on the first semiconductor layer and including polycrystalline Si slightly doped with a conductivity-type controlling impurity of the same conductivity-type as that of the first semiconductor layer, and a third semiconductor layer provided on the second semiconductor layer and highly doped with a conductivity-type controlling impurity of a conductivity-type opposite to that of the impurities for the doping of the first and the second semiconductor layers. Crystal grains grown from crystal nuclei generated in the first semiconductor layer are continuously grown to form the first and second semiconductor layers, are horizontally grown to contact neighboring crystal grains, and are perpendicularly grown to form an interface with the third semiconductor layer.

Abstract: A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.

Abstract: A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.