Polycrystalline Or Amorphous Semiconductor Patents (Class 136/258)
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Publication number: 20090095348Abstract: A solar cell has a p-n-junction which is parallel to an irradiated surface, and functional structures which are located on the surface of the solar cell. In a method for producing such a solar cell, a semiconductor material is doped on both sides for forming the p-n junction and the functional structures are disposed a surface of the solar cell.Type: ApplicationFiled: October 21, 2008Publication date: April 16, 2009Applicant: Wieland Electric GmbHInventor: WOLFGANG WEGMANN
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Publication number: 20090071539Abstract: Disclosed are a solar cell manufactured using a composite thin film comprising amorphous silicon and nanocrystalline silicon, a method of manufacturing the solar cell, and a composition for the composite thin film used in manufacturing the solar cell. More particularly, a silicon semiconductor layer in the solar cell is fabricated by using the composite thin film comprising the amorphous silicon and the nanocrystalline silicon, the composite thin film being formed by dispersing nanoparticles of the crystalline silicon in a liquid silicon precursor and modifying them. The solar cell of the present invention is manufactured by dispersing the crystalline silicon nanoparticles in the liquid silicon precursor, coating the dispersion on a substrate or printing the substrate with the dispersion, and heating the coated or printed substrate to modify the liquid silicon precursor into the amorphous silicon.Type: ApplicationFiled: February 29, 2008Publication date: March 19, 2009Inventors: Yong Woo Choi, Young Ho Choe, Hyung Seok Kim, Young Hee Lee
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Publication number: 20090050200Abstract: A solar cell includes a back metal-contact layer, a P-type semiconductor layer, a P-N junction layer, an N-type semiconductor layer, and a transparent electrically conductive layer. The P-type semiconductor layer is formed on the back metal-contact layer. The P-N junction layer is formed on the P-type semiconductor layer. The N-type semiconductor layer is formed on the P-N junction layer. The transparent electrically conductive layer is formed on the N-type semiconductor layer. The transparent electrically conductive layer functions as a front contact layer, and has a basic film and a plurality of photocatalyst nano-particles dispersed in the basic film.Type: ApplicationFiled: February 28, 2008Publication date: February 26, 2009Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: GA-LANE CHEN
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Publication number: 20090038682Abstract: A semiconductor substrate for a solar cell, comprising the semiconductor substrate having a surface which constitutes a light incident face of the solar cell and having a surface irregularities structure, wherein the surface has an surface area from 1.2 to 2.2 times that of an imaginary smooth face and the standard deviation of the heights of the irregularities is 1.0 ?m or less.Type: ApplicationFiled: May 26, 2005Publication date: February 12, 2009Inventors: Yuji Komatsu, Hiroyuki Fukumura, Yoshiroh Takaba, Ryoh Ozaki, Tohru Nunoi
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Publication number: 20090032099Abstract: An exemplary solar cell includes a flexible substrate, a back metal contact layer, a P-type semiconductor layer, a P-N junction layer, an N-type semiconductor layer, and a front metal contact layer. The substrate is made of polymer. The back metal contact layer is formed on the substrate. The P-type semiconductor layer is formed on the back metal contact layer. The P-N junction layer is formed on the P-type semiconductor layer. The N-type semiconductor layer is formed on a P-N junction layer. The front metal contact layer is formed on the N-type semiconductor layer.Type: ApplicationFiled: December 29, 2007Publication date: February 5, 2009Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: GA-LANE CHEN
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Publication number: 20090025785Abstract: An exemplary solar cell includes a flexible substrate, a back metal contact layer, a P-type semiconductor layer, a P-N junction layer, an N-type semiconductor layer, and a front metal contact layer. The substrate is made of stainless steel. The back metal contact layer is formed on the substrate. The P-type semiconductor layer is formed on the back metal contact layer. The P-N junction layer is formed on the P-type semiconductor layer. The N-type semiconductor layer is formed on a P-N junction layer. The front metal contact layer is formed on the N-type semiconductor layer.Type: ApplicationFiled: December 29, 2007Publication date: January 29, 2009Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: GA-LANE CHEN
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Publication number: 20090014066Abstract: The present invention provides a three-junction thin-film photoelectric converter having high conversion efficiency at low cost by improving the film quality of the crystalline silicon photoelectric conversion layer and improving the light trapping effect. A thin-film photoelectric converter according to the present invention is a three-junction thin-film photoelectric converter and has a structure in which a first amorphous silicon photoelectric conversion unit, a second amorphous silicon photoelectric conversion unit, a reflective intermediate layer, and a crystalline silicon photoelectric conversion unit are stacked in that order from the light incident side, wherein the photoelectric conversion units are disposed on a transparent base having surface unevenness, and the reflective intermediate layer has an unevenness depth that is smaller than that of the base.Type: ApplicationFiled: June 23, 2005Publication date: January 15, 2009Applicant: KANEKA CORPORATIONInventors: Takashi Suezaki, Kenji Yamamoto
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Publication number: 20090014067Abstract: A photovoltaic assembly includes a photovoltaic panel and a light leveling element. The photovoltaic panel includes a plurality of spaced photosensitive regions for receiving and converting light energy into electric energy. The light leveling element is disposed above the photovoltaic panel. The light leveling element includes a base, a plurality of first lenses and a plurality of second lenses. The first lenses are arranged on a central portion of the base. The second lenses are disposed on a peripheral portion of the base. The first and the second lenses are vertically aligned with the respective photosensitive regions. The refraction indices of the first lenses are less than that of the second lenses.Type: ApplicationFiled: April 21, 2008Publication date: January 15, 2009Applicant: HON HAI PRECISION INDUSTRY CO., LTD.Inventor: GA-LANE CHEN
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Publication number: 20090007964Abstract: The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8% absolute.Type: ApplicationFiled: December 13, 2005Publication date: January 8, 2009Inventors: Stefan Klein, Yaohua Mai, Friedhelm Finger, Reinhard Carius
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Publication number: 20090007965Abstract: Devices, solar cell structures, and methods of fabrication thereof, are disclosed.Type: ApplicationFiled: June 12, 2008Publication date: January 8, 2009Applicant: Georgia Tech Research CorporationInventors: Ajeet Rohatgi, Abasifreke Ebong, Vijay Yelundur
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Publication number: 20090009675Abstract: One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.Type: ApplicationFiled: September 2, 2008Publication date: January 8, 2009Applicant: AU OPTRONICS CORPORATIONInventors: An-Thung CHO, Chih-Wei CHAO, Chia-Tien PENG, Kun-Chih LIN
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Publication number: 20080314435Abstract: A unit nano photo cell comprised of a first component of conductive or semi conductive crystalline material, forming a backbone which spreads out in a three dimensional structural fashion, a second component of at least one photo active material bound to the first component, and a third component of carrier mobility promoter material bound to the second component, all of which together constitute a framework for separating electrons from holes when a light source is provide to the unit nano photo cell such that the second component acts as a photo active center, converting incoming photons into pairs of electron-holes, the first component transports electrons from the second component to a common bottom plate, and the third component extracts the holes from the second component and discharges them via a conductive pathway to a common top plate.Type: ApplicationFiled: June 22, 2007Publication date: December 25, 2008Inventor: Xiaoming He
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Publication number: 20080295882Abstract: A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline traction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.Type: ApplicationFiled: May 27, 2008Publication date: December 4, 2008Applicant: THINSILICON CORPORATIONInventors: JASON M. STEPHENS, KEVIN MICHAEL COAKLEY, GULEID HUSSEN
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Publication number: 20080289689Abstract: A glass concentrator for manufacture of solar energy conversion module is provided including a webbing that has a load sustenance characteristic and a hail impact resistance characteristic based on a first thickness of the webbing. The concentrator also includes a plurality of elongated concentrating elements integrally formed with the webbing. Each of the elongated concentrating elements has an aperture region, an exit region and two side regions, which bears a geometric concentration characteristic provided by a highly reflective side regions and an aperture-to-exit scale ratio in a range from about 1.8 to about 4.5. The glass concentrator can be attached with a plurality of photovoltaic strips cumulatively on each and every exit regions and clamped with a rigid or flexible back cover member to form a solar concentrator module for converting sunlight to electric energy. The solar concentrator module based on certain embodiments meets the industrial qualification standards.Type: ApplicationFiled: May 16, 2008Publication date: November 27, 2008Applicant: Solaria CorporationInventor: KEVIN R. GIBSON
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Publication number: 20080283120Abstract: The invention provides solar cells and methods of manufacturing solar cells having a Hetero-junction with Intrinsic Thin-layer (HIT) structure using an n-type multicrystalline silicon substrate. An n-type multicrystalline silicon substrate is subjected to a phosphorus diffusion step using a relatively high temperature. The front side diffusion layer is then removed. As a next step, a p-type silicon thin film is deposited at the front side of the substrate. This sequence avoids heating the p-type silicon thin film above its deposition temperature, and maintains the quality of the p-type silicon thin film.Type: ApplicationFiled: October 4, 2006Publication date: November 20, 2008Applicant: STICHTING ENERGIEONDERZOEK CENTRUM NEDERLANDInventors: Yuji Komatsu, Hanno Dietrich Goldbach, Rudolf Emmanuel Isidore Schropp, Lambert Johan Geerligs
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Publication number: 20080271783Abstract: There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.Type: ApplicationFiled: July 8, 2008Publication date: November 6, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Tsutomu Murakami, Shoji Nishida
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Publication number: 20080264481Abstract: The present invention provides a solar cell pre-laminate assembly comprising one or more solar cells laminated between two compositionally distinct encapsulant layers, and the method of preparing a solar cell module from such an assembly.Type: ApplicationFiled: April 30, 2007Publication date: October 30, 2008Inventor: Richard Allen Hayes
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Publication number: 20080251123Abstract: The problem posed by both conventional and novel crystalline silicon solar cells is the electrical isolation of layers doped with p and n conductivity types. The invention solves said problem in a simple and elegant manner. A masking paste is applied locally to at least one side of the silicon substrate and is subsequently dried. A doping material diffusion is then carried out, whereby the conductivity type of the doping material is in opposition to that of the base doping of the crystalline silicon substrate. In one of the subsequent production steps of the solar cell, the electric contacts are applied in such a way that at least one section of said contacts is isolated electrically from the rest of the contact by the masking paste. The masking paste thus allows an electrical isolation of the two external contacts of a solar cell by preventing the diffusion of one doping material using said paste. Other methods that achieve the same results are substantially more complex and expensive to use.Type: ApplicationFiled: November 8, 2007Publication date: October 16, 2008Applicant: UNIVERSITAT KONSTANZInventors: Peter Fath, Andre Kress
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Publication number: 20080230782Abstract: A device for generating a plurality of electron-hole pairs from a photon is disclosed. The device includes a substrate, a first electrode formed above the substrate, and a first doped Group IV nanoparticle thin film deposited on the first electrode. The device further includes an intrinsic layer deposited on the first doped Group IV nanoparticle thin film, wherein the intrinsic layer includes a matrix material with a melting temperature T1, wherein T1 is greater than about 300° C., and a set of quantum confined nanoparticles each with a melting temperature T2, wherein T2 is less than about 900° C., wherein the melting temperature T1 is less than the melting temperature T2.Type: ApplicationFiled: September 19, 2007Publication date: September 25, 2008Inventors: Homer Antoniadis, Pingrong Yu
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Publication number: 20080223439Abstract: An interconnected photoelectrochemical (PEC) cell (1) generates hydrogen and oxygen from water while being illuminated with radiation such as sunlight. The photovoltaic structure in the photoelectrode is deposited on a transparent and insulating substrate (also called superstrate) (3) that is covered with a transparent conducting layer (front electrode) (4). The front electrode is electrically connected to the back side of the photovoltaic structure such that the PLC cell can be made with high efficiency and high durability and at low cost. Three types of photoelectrodes and phtoelectrochemical cells are illustrated as examples.Type: ApplicationFiled: February 18, 2005Publication date: September 18, 2008Inventors: Xunming Deng, Liwei Xu
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Publication number: 20080223440Abstract: Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same.Type: ApplicationFiled: April 25, 2008Publication date: September 18, 2008Inventors: SHURAN SHENG, Yong-Kee Chae, Soo Young Choi
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Publication number: 20080202577Abstract: Photovoltaic modules can be formed with a plurality of solar cells having different sized structures to improve module performance. The sized can be determined dynamically based on estimated properties of the semiconductor so that the current outputs of the cells in the module are more similar to each other. The modules can produce higher power relative to modules with similar equal sized cells that do not produce matched currents. Appropriate dynamic processing methods are described that include processing steps that provide adjustments of the processing according to the dynamic adjustments in cell designs.Type: ApplicationFiled: February 15, 2008Publication date: August 28, 2008Inventor: Henry Hieslmair
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Publication number: 20080196761Abstract: A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer on a transparent, electrically insulating substrate, and a photovoltaic layer containing mainly crystalline silicon-based semiconductors and a back electrode layer formed sequentially on the transparent electrode layer of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 ?m to 2 ?m, and a Raman ratio of from 3.0 to 8.0.Type: ApplicationFiled: December 21, 2007Publication date: August 21, 2008Applicant: MITSUBISHI HEAVY INDUSTRIES, LTDInventors: Youji Nakano, Yoshiaki Takeuchi, Kengo Yamaguchi, Yasuhiro Yamauchi
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Publication number: 20080179762Abstract: The present invention relates to a layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, where the laser-induced aggregation silicon nano-dots are formed by a laser-induced aggregation process applied to the silicon-rich dielectric layer, and applications of the same. In one embodiment, the silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, and a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer is usable in a solar cell, a photosensitive element, a touch panel, a non-volatile memory device as storage node, and a display panel, respectively.Type: ApplicationFiled: October 22, 2007Publication date: July 31, 2008Applicant: AU Optronics CorporationInventors: An-Thung Cho, Chih-Wei Chao, Chia-Tien Peng
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Publication number: 20080173350Abstract: Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same.Type: ApplicationFiled: January 18, 2007Publication date: July 24, 2008Inventors: Soo-Young Choi, Yong-Kee Chae, Shuran Sheng
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Publication number: 20080156369Abstract: An active layer utilized in a solar cell. The active layer includes a polymer film having a plurality of hollow column array structures formed therein and a semiconductor material filled in the hollow column structures. The invention also provides a method of fabricating the active layer utilized in a solar cell.Type: ApplicationFiled: April 16, 2007Publication date: July 3, 2008Inventors: Bao-Tsan Ko, Shu-Hua Chan, Ching Ting, Yi-Chun Chen, Hsiang-Jui Chen
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Publication number: 20080156371Abstract: A first population of semiconductor nanocrystals to create electron transport conduits, a second population so semiconductor nanocrystals to create hole transport conduits; and a third population of semiconductor nanocrystals to be used for either light absorption or light emission can be combined to form an inorganic nanostructure layer.Type: ApplicationFiled: December 11, 2007Publication date: July 3, 2008Inventors: Michael LoCascio, San Ming Yang
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Publication number: 20080156370Abstract: A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included.Type: ApplicationFiled: April 11, 2006Publication date: July 3, 2008Applicant: Hahn-Meitner-Institut Berlin GmbHInventors: Ossamah Abdallah, Guiseppe Citarella, Marinus Kunst, Frank Wuensch
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Publication number: 20080121280Abstract: A method for the production of a photovoltaic device is disclosed. In one aspect, the method comprises providing a carrier substrate. The method further comprises forming a crystalline semiconductor layer on the substrate. The method further comprises carrying out hydrogen passivation of the crystalline semiconductor layer. The method further comprises creating an emitter on the surface of the passivated crystalline semiconductor layer.Type: ApplicationFiled: November 16, 2007Publication date: May 29, 2008Applicant: Interuniversitair Microelektronica Centrum (IMEC) vzwInventors: Lodiwijk Carnel, Ivan Gordon, Jef Poortmans, Guy Beaucarne
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Publication number: 20080121279Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.Type: ApplicationFiled: November 27, 2006Publication date: May 29, 2008Applicant: SUNPOWER CORPORATIONInventor: Richard M. Swanson
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Publication number: 20080105302Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.Type: ApplicationFiled: September 13, 2007Publication date: May 8, 2008Applicant: Guardian Industries Corp.Inventors: Yiwei Lu, Willem den Boer
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Patent number: 7368658Abstract: A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH4 and about 99% by volume H2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH4 and about 89% by volume Ar and about 10% by volume N2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.Type: GrantFiled: October 31, 2003Date of Patent: May 6, 2008Assignee: The United States of America as represented by the United States Department of EnergyInventor: Dieter M. Gruen
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Publication number: 20080092951Abstract: In a method of making a c-Si-based cell or a ?c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.Type: ApplicationFiled: August 26, 2004Publication date: April 24, 2008Inventors: Qi Wang, Tihu Wang, Matthew R. Page, Yanfa Yan
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Publication number: 20080083454Abstract: Disclosed herein is a photovoltaic cell using catalyst-supported carbon nanotubes and a method for producing the same. More particularly, the photovoltaic cell includes a photo anode, a cathode including a layer of metal catalyst particle supporting carbon nanotubes, and an electrolyte disposed between the photo anode and the cathode. The photovoltaic cell is economic in terms of production costs and process steps, and shows improved catalytic activity due to an enlarged contact area and conductivity, resulting in excellent photoelectric efficiency.Type: ApplicationFiled: November 16, 2006Publication date: April 10, 2008Applicant: SAMSUNG ELECTRONICS CO., LTDInventors: Young Jun Park, Eun Sung Lee, Jeong Hee Lee, Sang Cheol Park, Jung Gyu Nam
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Patent number: 7352044Abstract: A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.Type: GrantFiled: January 16, 2004Date of Patent: April 1, 2008Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroshi Yamada, Hisao Morooka, Kazuo Nishi
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Publication number: 20080072953Abstract: One or more embodiments of the presently described invention provide a method for fabricating an all-back contact photovoltaic cell. The method includes the steps of depositing a semiconductor layer on a non-opaque substrate, increasing a level of crystallinity of the semiconductor layer by exposing it to a focused beam of energy, doping the semiconductor layer with first and second dopants on one side to create at least two doped regions, and providing electrical contacts to the doped regions by depositing a conductive layer on the semiconductor layer so that the electrical contacts are on the same side of the semiconductor layer while incident light strikes the layer from an opposing side.Type: ApplicationFiled: September 25, 2007Publication date: March 27, 2008Applicant: ThinSilicon Corp.Inventors: Jason M. Stephens, Kevin Michael Coakley, Guleid Hussen
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Publication number: 20080047604Abstract: In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.Type: ApplicationFiled: August 25, 2006Publication date: February 28, 2008Applicant: General Electric CompanyInventors: Bastiaan Arie Korevaar, Loucas Tsakalakos
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Patent number: 7332785Abstract: A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6), a light-absorbing layer (3) containing light-absorbing particles carrying dye and an electrolyte layer (5), characterized in that the light-absorbing layer (3) containing light-scattering particles (4) different in size from the light-absorbing particles. In such a dye-sensitized solar cell according to the present invention, the energy of light, which passes through a light-absorbing layer in a conventional cell structure, can be strongly absorbed by the dye in the light-absorbing layer of the present invention. This will increase the conversion efficiency and output current of the dye-sensitized solar cell.Type: GrantFiled: April 25, 2006Date of Patent: February 19, 2008Assignee: Sony CorporationInventor: Takashi Tomita
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Publication number: 20070256734Abstract: A semiconductor device of p-i-n type configuration includes a p layer which is comprised of a p-doped semiconductor material, an n layer comprised of an n-doped semiconductor material and an i layer comprised of a substantially intrinsic, nanocrystalline semiconductor material interposed therebetween. The crystalline volume in the i layer decreases as the thickness of said layer increases from its interface with the n layer to its interface with the p layer. The grain size of the substantially intrinsic nanocrystalline semiconductor material may also decrease as the thickness of the i layer increases from its interface with the n layer to its interface with the p layer. The volume of regions of intermediate range order in a portion of the i layer commencing at the interface of the i layer and the p layer, and comprising no more than 50% of the thickness thereof, is greater than is the volume of regions of intermediate range order in the remainder of the i layer.Type: ApplicationFiled: May 7, 2007Publication date: November 8, 2007Inventors: Subhendu Guha, Chi Yang, Baojie Yan, Guozhen Yue
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Patent number: 7279632Abstract: Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1 and the average composition of the discrete regions is represented by Si1-x2Gex2 where X1<X<X2. Also, provided is a solar-cell polycrystal satisfying high light-absorption efficiency and low cost by using the multi-element polycrystal, a solar cell and a method of manufacturing the solar cell.Type: GrantFiled: February 25, 2004Date of Patent: October 9, 2007Assignee: President of Tohoku UniversityInventors: Kazuo Nakajima, Noritaka Usami, Kozo Fujikawa, Wugen Pan
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Patent number: 7276658Abstract: The invention pertains to a method of manufacturing a photovoltaic foil provided with solar cells connected in series, which method comprises the following steps: a) providing a temporary substrate b) applying a transparent conductive oxide (TCO) c) applying a photovoltaic (PV) layer on the TCO d) if so desired, applying one or two insulating strips onto the PV layer e) applying a back electrode onto the PV layer and, if they are present, onto the insulating strips f) if so desired, repairing shunts in the back electrode g) providing a groove in the back electrode down to the PV layer, or if it is present, down to an insulating strip h) if so desired, providing a permanent carrier i) removing the temporary substrates j) providing a groove from the side of the side of the TCO through the TCO and, optionally, through the PV layer down to the back electrode, or if it is present, down to an insulating strip if so desired, applying an encapsulant onto the TCO layer, in which process a conductive connection throughType: GrantFiled: June 21, 2002Date of Patent: October 2, 2007Assignee: Akzo Nobel N.V.Inventor: Gerrit Cornelis Dubbeldam
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Patent number: 7271333Abstract: The present invention relates to light-weight thin-film photovoltaic cells, methods for making cells, modules made from cells, and methods for making modules from cells. The invention teaches a manner in which individual cells may be bonded to one another, eliminating the need for an additional support substrate and interconnecting leads, thus reducing the overall weight and thickness of individual cells and modules of the cells.Type: GrantFiled: July 19, 2002Date of Patent: September 18, 2007Assignee: Ascent Solar Technologies, Inc.Inventors: Leon B. Fabick, Alan W. Yehle
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Patent number: 7259321Abstract: A method for manufacturing a thin film photovoltaic module comprising series connected cells, the cells comprising a front contact, a back contact and a photovoltaically active region positioned between the front and back contacts, the series connected cell being formed by scribing a front contact layer, a photovoltaically active layer and a back contact layer on a substrate, the method comprising laser scribing at least one of the front contact layer, the photovoltaically active layer or the back contact layer to form laser scribes using a laser beam scanned rapidly over the layer.Type: GrantFiled: January 3, 2003Date of Patent: August 21, 2007Assignee: BP Corporation North America Inc.Inventors: Robert S. Oswald, Shengzhong Liu
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Patent number: 7253355Abstract: The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.Type: GrantFiled: December 19, 2002Date of Patent: August 7, 2007Assignee: RWE Schott Solar GmbHInventors: Ingo Schwirtlich, Wilfried Schmidt, Hilmar von Campe
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Patent number: 7214872Abstract: An ITO film as a transparent conductive film is formed on a semiconductor layer comprising an amorphous semiconductor or a microcrystalline semiconductor, a comb-like collecting electrode is formed on the ITO film, and a cover glass containing alkaline ions is placed on the ITO film and collecting electrode with a resin film made of EVA between them. The (222) plane orientation degree of the ITO film (transparent conductive film) is not less than 1.0, preferably not less than 1.2 and not more than 2.6, and more preferably not less than 1.4 and not more than 2.5. Alternatively, the transparent conductive film has an orientation of (321) planes on the boundary side with respect to the semiconductor layer and mainly an orientation of (222) planes in the remaining portion. When the total thickness of the ITO film is 100 nm, the (321)/(222) diffraction strength ratio in a 10 nm-thick portion on the semiconductor layer side is not less than 0.5 and not more than 2.5.Type: GrantFiled: September 17, 2002Date of Patent: May 8, 2007Assignee: Sanyo Electric Co., LtdInventors: Eiji Maruyama, Toshiaki Baba
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Patent number: 7199303Abstract: An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1.Type: GrantFiled: March 13, 2001Date of Patent: April 3, 2007Assignee: Sony CorporationInventors: Akio Machida, Setsuo Usui, Kazumasa Nomoto
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Patent number: 7189917Abstract: To provide a stacked photovoltaic device including: at least one pair of a first photovoltaic device and a second photovoltaic device stacked in order from a light incident side; and a selective reflection layer formed between the at least one pair of the first photovoltaic device and the second photovoltaic device and adapted to electrically connect therebetween, in which the selective reflection layer has a sheet resistance of 100 k?/? or more and 100 M?/? or less.Type: GrantFiled: March 17, 2004Date of Patent: March 13, 2007Assignee: Canon Kabushiki KaishaInventors: Naoto Okada, Toshimitsu Kariya
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Patent number: 7173180Abstract: A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.Type: GrantFiled: April 17, 2006Date of Patent: February 6, 2007Assignee: JSR CorporationInventors: Hiroshi Shiho, Hitoshi Kato
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Patent number: 7161083Abstract: The present invention relates to improvements in solar cell and solar panel photovoltaic materials which cause the solar cells/panels to operate more efficiently. In particular, the present invention focuses primarily on matching or modifying particular incident light energies (e.g., from the sun) to predetermined energy levels in a solar cell photovoltaic substrate material required to excite, for example, electrons in at least a portion of the substrate material in a desirable manner. In this regard, for example, energy levels of incident light, and thus, corresponding particular wavelengths, such as desirable wavelength (?1), or frequenices of incidient light, can be at least partially matched with various desirable energy levels in a substrate material by filtering out at least a portion of certain undesirable incident light, such as that of wavelength (?2), that comes into contact with at least a portion of a surface of a solar cell photovlataic substrate.Type: GrantFiled: May 16, 2002Date of Patent: January 9, 2007Assignee: GR Intellectual Reserve, LLCInventor: Mark G. Mortenson
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Patent number: 7132598Abstract: A photoelectric conversion device comprising a semiconductor and an organic electrically conducting agent, wherein the organic electrically conducting agent exhibits a melting temperature Tm which is lower than the operation temperature of the photoelectric conversion device.Type: GrantFiled: December 3, 2003Date of Patent: November 7, 2006Assignee: Sony Deutschland GmbHInventors: Gabriele Nelles, Akio Yasuda, Hans-Werner Schmidt, Thelakkat Mukundan, Haridas R. Karickal, Donal Lupo