Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

Abstract: Disclosed herein is a conductive paste for forming a conductive film, including: (A) a conductive powder; (B) as a first additive, at least one selected from a first group consisting of Se, Te, a compound containing Se, and a compound containing Te; (C) as a second additive, a compound containing at least one element selected from a second group consisting of V, Nb, Ta, Sb, Bi, Mn, Ge, Si, and W; (D) glass frit; (E) an organic binder; and (F) a solvent.

Abstract: The invention relates to an electro-conductive paste comprising coarse SiO2 particles in the preparation of electrodes in solar cells, particularly in the preparation of electrodes in MWT solar cells, particularly in the preparation of the metal wrap through, or plug, electrode in such solar cells. In particular, the invention relates to a solar cell precursor, a process for preparing a solar cells, a solar cell and a module comprising solar cells. The invention relates to a solar cell precursor at least comprising as precursor parts: i) a wafer (101) with at least one hole (315) with a Si surface (113); ii) an electro-conductive paste (105) at least comprising as paste constituents: a) metallic particles; b) an inorganic reaction system; c) an organic vehicle; and d) inorganic oxide particles having no glass transition temperature below about 750° C. or a glass transition temperature which is at least about 50° C.

Abstract: A method for fabricating a solar cell includes providing a first substrate with at least one protruding element on the first substrate. The method removes a portion of a lower conducting layer located on the first substrate, wherein the removed portion of the lower conducting layer is located near the at least one protruding element. The method removes a first portion of an active layer located on the lower conducting layer. The method deposits an upper conducting layer on the active layer, wherein the conducting layer covers the at least one protruding element. The method removes a portion of the upper conducting layer, wherein the removed portion of the upper conducting is located near the at least one protruding element.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: A layered perovskite structure comprising a substrate having an upper surface and a lower surface; and a layer of a perovskite film on the upper surface. A passivating layer may be applied to the upper surface of the substrate to which the perovskite film is attached. The passivating layer comprises at least one a chalcogenide-containing species with the general chemical formula (E3E4)N(E1E2)N?C?X where any one of E1, E2, E3 and E4 is independently selected from C1-C15 organic substituents comprising from 0 to 15 heteroatoms or hydrogen, and X is S, Se or Te, thiourea, thioacetamide, selenoacetamide, selenourea, H2S, H2Se, H2Te, or LXH wherein L is a Cn organic substituent comprising heteroatoms and X?S, Se, or Te. The substrate comprises PEDOT:PSS, and may further comprise a layered glass/ITO/PEDOT:PSS structure. A passivating layer is applied to the PEDOT:PSS layer, and a top electrode may be applied over the perovskite film.

Abstract: A passivation layer is deposited on a first portion of a region of the solar cell. A grid line is deposited on a second portion of the region. The passivation layer is annealed to drive chemical species from the passivation layer to deactivate an electrical activity of a dopant in the first portion of the region of the solar cell.

Abstract: The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector disposed below the first Bragg reflector, wherein the first solar cell comprises a dilute nitride composition and has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell and the second Bragg reflector is operable to reflect a third range of wavelengths back into the first solar cell, and the first Bragg reflector and the second Bragg reflector are operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell.

Abstract: A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.

Abstract: Embodiments herein provide a method of preparing Silicon (Si) from sand (SiO2).The method includes preparing sand particles with a size less than 50 microns. Further, the method includes obtaining Magnesium (Mg) particles with a size in range of 105-150 microns. Further, the method includes mixing sand and Mg particles in a predefined ratio to obtain a Sand-Magnesium (SM) mixture. Further, the method includes subjecting the SM mixture to heating at a temperature for a predefined time to obtain Si sample. Further, the method includes identifying un-reacted portion of Mg and sand particles. Furthermore, the method includes purifying byproducts of magnesium as well as un-reacted-magnesium and silica to obtain pure Si.

Abstract: A display device includes: light emitting units; a light absorbing unit that surrounds each of the light emitting units; and a low-reflection layer provided on the surfaces of the light emitting units and the surface of the light absorbing unit. The surface of the light absorbing unit is a corrugated surface that diffuses light, and the low-reflection layer is formed along the corrugated surface.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.

Abstract: A high-efficiency solar cell including an Indium, Gallium, Aluminum and Nitrogen (in a combination comprising InGaN, or InAlN, or InGaAlN) alloy which may be blended with a polyhedral oligomeric silsesquioxane (POSS) material, and which may include an absorption-enhancing layer including one of more of carbon nanotubes, quantum dots, and undulating or uneven surface topography.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: A method of manufacturing a solar cell, including the steps of: forming an SiNx film over a second principal surface of an n-type semiconductor substrate; forming a p-type diffusion layer over a first principal surface of the n-type semiconductor substrate after the SiNx film forming step; and forming an SiO2 film or an aluminum oxide film over the p-type diffusion layer.

Abstract: A multijunction solar cell including an upper first solar subcell; a second solar subcell adjacent to the first solar subcell; a first graded interlayer adjacent to the second solar subcell; a third solar subcell adjacent to the first graded interlayer such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell, and a lower fourth solar subcell is provided adjacent to the second graded interlayer, such that the fourth subcell is lattice mismatched with respect to the third subcell. An encapsulating layer composed of silicon nitride or titanium oxide disposed on the top surface of the solar cell, and an antireflection coating layer disposed over the encapsulating layer.

Abstract: The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of forming a boron diffusion layer on a silicon substrate by a boron diffusion process, the process including a first step of thermally diffusing boron on the silicon substrate and a second step of oxidizing a boron silicide layer formed on the silicon substrate at the first step, wherein the second step has a state at a temperature of 900° C. or higher and a treatment temperature at the first step or lower, for 15 minutes or more.

Abstract: An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals.

Abstract: The present disclosure relates to a novel polymer compound and a method for preparing the same. More particularly, the present disclosure relates to a novel conductive low band gap electron donor polymer compound having high photon absorptivity and improved hole mobility, a method for preparing the same and an organic photovoltaic cell containing the same. Since the conductive polymer compound as a low band gap electron donor exhibits high photon absorptivity and superior hole mobility, it can be usefully used as a material for an organic optoelectronic device such as an organic photodiode (OPD), an organic thin-film transistor (OTFT), an organic light-emitting diode (OLED), an organic photovoltaic cell, etc. as well as in the development of a n-type material.

Abstract: In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

Abstract: A semifinished product of a multi-junction solar cell includes a first semiconductor body that is designed as a first partial solar cell and has a first band gap, a second semiconductor body that is designed as a second partial solar cell and has a second band gap. The first semiconductor body and the second semiconductor body form a bonded connection to a tunnel diode and the first band gap is different from the second band gap. A first substrate material is adapted as a substrate layer, wherein a sacrificial layer is formed between the first substrate material and the first partial solar cell and the first substrate material is removed from the first semiconductor body, the sacrificial layer being destroyed in the process.

Abstract: A method is provided for forming a back contact perovskite solar cell. A substrate is coated with a positive electrode layer. The positive electrode layer is then conformally coated with a first insulator. A plurality of negative electrode segments are selectively deposited overlying the first insulator layer, and a second insulator layer is conformally deposited overlying the negative electrode segments and first insulator layer. The second insulator layer is selectively etched to expose the negative electrode segments, and an n-type semiconductor is selectively deposited overlying each exposed negative electrode segment to form n-type contacts. The first and second insulator layers are then selectively etched to expose positive electrode segments. A p-type semiconductor is selectively deposited over each exposed positive electrode segment to form p-type contacts. Finally, a hybrid organic/inorganic perovskite (e.g., CH3NH3Pbl3-XClX) layer is conformally deposited overlying the p-type and n-type contacts.

Abstract: A dye-sensitized solar cell (DSC) element includes at least one DSC, and the DSC includes a first electrode, a second electrode facing the first electrode, and an oxide semiconductor layer provided on the first electrode. The oxide semiconductor layer includes a light absorbing layer provided on the first electrode and a reflecting layer as a layer contacting a portion of a first surface of a side opposite to the first electrode among surfaces of the light absorbing layer and being arranged at a position farthest from the first electrode. The first surface of the light absorbing layer includes a second surface contacting the reflecting layer, and a surface area S1 of the first surface and a surface area S2 of the second surface satisfy the following formula: 0.7?S2/S1<1 The reflecting layer is arranged in an inner side of the first surface of the light absorbing layer.

Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

Abstract: It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step of forming a thin film including a metal having higher electronegativity than silicon and having a plurality of openings on a silicon substrate, a second step of soaking the silicon substrate subjected to the first step in a hydrofluoric acid solution containing oxidizer, and a third step of soaking the silicon substrate subjected to the second step in an ammonia aqueous solution containing oxidizer. By performing the steps in the above order, a minute uneven structure is formed on a surface of the silicon substrate to reduce the reflectance.

Abstract: A method for producing high efficiency organic light emitting devices, that have an organic semiconductor active layer sandwiched between electrodes where at least one of the electrodes is a film of conductive nanowires, carbon nanoparticles, light scattering nanoparticles and a polymer support. The light scattering nanoparticles can be incorporated in the conductive nanowires, carbon nanoparticle or polymer support elements of the electrode. The second electrode can be identical to the first to provide a symmetrical device or can be a conductive paste or metal layer. The entire process, including the formation of both of the electrodes, the emissive polymer layer, and the substrate, may be carried out by solution processing.

Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) providing one or more hydrogen sources accessible by each surface of the device; and iii) heating the device, or a local region of the device to at least 40° C.

Abstract: A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI2) film and methylammonium halide (CH3NH3X) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbI2 layer onto an ITO-covered glass; spinning an MAI layer onto the PbI2 layer; annealing the PbI2 layer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.

Abstract: A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

Abstract: A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface: has a lateral feature size bigger than 100 nm, and a root-element-square roughness bigger than 40 nm, includes inclined elementary surfaces such that ?50 is greater than 20°, where ?50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, and includes valleys formed between two elementary surfaces and having a radius of curvature smaller than 100 nm.

Abstract: A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF4 and O2, wherein the CF4 is present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CF4 present in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.

Abstract: A copolymer containing a repeating unit having a dioxopyrrole condensed ring skeleton and a repeating unit having a dithieno condensed ring skeleton and also having a specific substituent is provided.

Abstract: Various embodiments may relate to an organic optoelectronic component with a layer structure for generating and separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type, the layer structure including a hole-conducting transparent inorganic semiconductor.

Abstract: A method of increasing the haze of a coating stack having a top layer and an undercoating layer using a chemical vapor deposition coating process includes at least one of: increasing a precursor flow rate; decreasing a carrier gas flow rate; increasing a substrate temperature; increasing a water flow rate; decreasing an exhaust flow rate; and increasing a thickness of at least one of the top layer or undercoating layer.

Abstract: A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cm?1 with respect to light having a wavelength equal to or greater than 700 nm.

Abstract: A copolymer containing a repeating unit having a dioxopyrrole condensed ring skeleton and a repeating unit having a dithieno condensed ring skeleton and also having a specific substituent is provided.

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.

Abstract: The invention addresses a problem of obtaining a conjugated polymer having a higher molecular weight through coupling reaction of monomers using a transition metal catalyst. The invention relates to a method for producing a conjugated polymer, which comprises polymerizing one or more monomers through a coupling reaction, wherein the coupling reaction of the monomer is carried out by using one or more kinds of homogeneous transition metal complex catalysts and one or more kinds of heterogeneous transition metal complex catalysts in combination.

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract: A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.

Abstract: Provided is a photoelectric conversion element containing at least: a semiconductor layer containing a semiconductor and a dye which is supported by the semiconductor, and a hole transport layer containing a hole transport compound, wherein the dye is a compound represented by Formula (1), and the hole transport compound is a polymer made from 3,4-ethylenedioxythiophene:

Abstract: Thin film gallium nitride structures are fabricated by providing a semiconductor-carbon alloy substrate having a dielectric layer on a surface of the substrate, forming trenches in the dielectric layer to expose surface portions of the surface of the substrate, and forming an epitaxial graphene layer on the exposed surface portions of the surface of the substrate. A buffer layer of rare earth metal oxide material is grown epitaxially on the graphene layer. Gallium nitride structures are formed epitaxially on the metal oxide/graphene layers and within the trenches of the dielectric layer, limiting defects by aspect ratio trapping. A stressor layer is formed over the nitride structures. Removing the substrate below the graphene layer allows the nitride structures to be placed on a surrogate substrate.

Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer having perovskite material and copper-oxide or other metal-oxide charge transport material. Such charge transport material may be disposed adjacent to the perovskite material such that the two are adjacent and/or in contact. Inclusion of both materials in an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: one or more interfacial layers, one or more mesoporous layers, and one or more dyes.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: A crystalline silicon ingot is produced using a directional solidification process. In particular, a crucible is loaded with silicon feedstock above a seed layer of uniform crystalline orientation. The silicon feedstock and an upper part of the seed layer are melted forming molten material in the crucible. This molten material is then solidified, during which process a crystalline structure based on that of the seed layer is formed in a silicon ingot. The seed layer is arranged such that a {110} crystallographic plane is normal to the direction of solidification and also so that a peripheral surface of the seed layer predominantly also lies in a {110} crystallographic plane. It is found that this arrangement offers a substantial improvement in the proportion of mono-crystalline silicon formed in the ingot as compared to alternative crystallographic orientations.

Abstract: A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: A solar cell and a method of fabricating the same are provided. The solar cell includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, and a buffer layer on the light absorbing layer. The back electrode layer, the light absorbing layer, and the buffer layer are formed therein with a first through hole formed through the back electrode layer, the light absorbing layer, and the buffer layer, and an insulating member is deposited in the first through hole.