Abstract: A photovoltaic device and a method for preparing same are described. The photovoltaic device comprises at least one pair of electrodes, wherein each member of the at least one pair of electrodes having a different working function than the other member of that pair; and one or more layers of graphene located between the two electrodes, wherein the one or more layers made of graphene have a lower working function than a working function of one member of the at least one pair of electrodes, and a higher working function than a working function of the other member of the at least one pair of electrodes, thereby allowing generation of an electric field across the photovoltaic device without applying any external voltage to the electrodes, in response to solar radiation impinging the device. Optionally, one or both electrodes have a coating of a different buffering material than the other.

Abstract: A method of forming a plurality of discrete, interconnected solar cells mounted on a carrier by providing a first semiconductor substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell structure; forming a metal back contact layer over the solar cell structure; mounting a carrier on top of the metal back contact; removing the first substrate; and lithographically patterning and etching the solar cell structure to form a plurality of discrete solar cells mounted on the carrier.

Abstract: Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.

Abstract: A photovoltaic device includes a silicon substrate, a doped silicon layer, a first electrode and a second electrode. The silicon substrate has a plurality of cavities defined therein. The doped silicon layer is formed in contact the silicon substrate. The first electrode including a plurality of carbon nanotube cables is adjacent to the silicon substrate. The second electrode is attached to the silicon substrate.

Abstract: Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein said photoelectric conversion film contains a crystallized fullerene or fullerene derivative, and said crystallized fullerene or fullerene derivative is oriented in the (111) direction perpendicularly to the film surface of said electrically conductive film.

Abstract: A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer.

Abstract: A solar cell includes a substrate, a lower conductor layer, an anti-reflection coating (ARC) layer and an upper conductor layer. The substrate has a front side, a back side and a doped region adjacent to the front side. The lower conductor layer has a first portion embedded into the doped region and a second portion other than the first portion. The ARC layer is disposed on the front side of the substrate and covers the lower conductor layer such that the second portion of the lower conductor layer is disposed in the ARC layer. The upper conductor layer has a first portion embedded into the ARC layer and a second portion other than the first portion of the upper conductor layer. The second portion of the upper conductor layer is exposed out of the ARC layer, and the upper conductor layer is electrically connected to the lower conductor layer.

Abstract: Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

Abstract: An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon, substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.

Abstract: A photoelectric conversion device in which photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance oh a back electrode side is provided between the back electrode and the crystalline silicon substrate. The light-transmitting conductive film includes an organic compound arid an inorganic compound. The organic compound includes a material having an excellent hole-transport property. The inorganic compound includes a transition metal oxide having ah electron-accepting property.

Abstract: A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

Abstract: In various embodiments, fiber photovoltaic devices are described in the present disclosure. The fiber photovoltaic devices include an optical filament, a first electrode coating the optical filament, a continuous semiconductive layer deposited above the first electrode layer, and a second electrode layer deposited above the continuous semiconductive layer. The first electrode layer is at least partially transparent to electromagnetic radiation. The continuous semiconductive layer is in electrical contact with the first electrode layer. The continuous semiconductive layer absorbs electromagnetic radiation and turns the electromagnetic radiation into an electrical signal. The continuous semiconductive layer includes at least two semiconductive materials that are substantially unmixed and are located in separate regions along the longitudinal axis of the fiber photovoltaic device. The second electrode layer is in electrical contact with the continuous semiconductive layer.

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract: A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.

Abstract: A method for fabricating a crystalline silicon photovoltaic cell is disclosed. In one aspect, the method includes a) providing a crystalline silicon substrate of a first dopant type, b) performing an implantation, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate, c) after the implantation, depositing a hydrogen containing layer on the front surface of the substrate, and d) after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.

Abstract: A method of manufacturing a solar cell by providing a first semiconductor substrate and depositing a first sequence of layers of semiconductor material to form a first solar subcell, including a first bond layer disposed on the top of the first sequence of layers. A second semiconductor substrate is provided, and on the top surface of the second substrate a second sequence of layers of semiconductor material is deposited forming at least a second solar subcell. A second bond layer is disposed on the top of said second sequence of layers. The first solar subcell is mounted on top of the second solar subcell by joining the first bond layer to the second bond layer in an ultra high vacuum chamber, and the first semiconductor substrate is removed.

Abstract: A photovoltaic cell comprising a selectively patterned, transparent, conductive coating (TCC) on a sunward surface. The selectively patterned TCC is contiguous with at least some highly conductive gridlines on the sunward surface. A portion of the sunward surface of the semiconductor wafer is not covered by either the gridlines or the TCC. Also disclosed are methods of manufacturing a photovoltaic cell comprising a selectively patterned, transparent, conductive coating (TCC) on a sunward surface. The methods include the step of modeling the optical and electrical properties of the semiconductor, the gridlines, and the TCC to determine a pattern for the TCC that results in a low relative power loss for the photovoltaic cell.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a first semiconductor layer; a p+-type semiconductor layer; and an interlayer interposed between the first semiconductor layer and the p+-type semiconductor layer, wherein the interlayer includes magnesium and tellurium.

Abstract: A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.

Abstract: A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a preferred embodiment of the present invention, said grating is formed on the surface of a doped semiconductor for the purposes of optical frequency down conversion. The semiconductor is doped so as to create energy levels within the forbidden zone between the conduction and valence bands. Incident radiation excites electrons from the valence to conduction band from where they decay to the meta-stable newly created energy level in the forbidden zone. From there, electrons return to the valence band, accompanied by the emission of radiation of lower frequency than that of the incident radiation. Optical frequency down-conversion is thus efficiently and rapidly accomplished.

Abstract: A three-dimensional thin-film solar cell 100, comprising a three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture or dual-aperture unit cells with emitter junction regions 522 and doped base regions 530, emitter metallization regions 525 and base metallization regions 532. Optionally, the three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency.

Abstract: A crystalline solar cell is provided that includes a front-sided n-doped area and a rear-sided p-doped area, a front-sided contact, a rear-sided contact and at least one front-sided first layer made from SiN. In order to reduce degradation of the parallel resistance, a second layer made of at least one material selected from the group SiN, SiOx, Al2Ox, SiOxNy:Hz, a-Si:H, TiOx or containing said type of material is disposed between the first layer and the n-doped area and is then doped for forming imperfections.

Abstract: According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.

Abstract: Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: Device structure that facilitates high rate plasma deposition of thin film photovoltaic materials at microwave frequencies. The device structure includes a primer layer that shields the substrate and underlying layers of the device structure during deposition of layers requiring aggressive, highly reactive deposition conditions. The primer layer prevents or inhibits etching or other modification of the substrate or underlying layers by highly reactive deposition conditions. The primer layer also reduces contamination of subsequent layers of the device structure by preventing or inhibiting release of elements from the substrate or underlying layers into the deposition environment. The presence of the primer layer extends the range of deposition conditions available for forming photovoltaic or semiconducting materials without compromising performance. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors from fluorinated precursors in a microwave plasma process.

Abstract: Disclosed is a method of manufacturing a silicon thin film, a method of manufacturing a silicon thin-film photovoltaic cell, and a silicon thin film. There is provided a method of manufacturing a silicon thin film in a form in which an inert face formed by an exposed face of a silicon substrate and an inert layer is formed by selectively forming the inert layer on the silicon substrate in which growth of a silicon crystal is inactive for a raw material gas of the silicon crystal, and the silicon crystal is grown from the exposed face such that the silicon crystal covers the silicon substrate by supplying a raw material gas, of which a surface decomposition reaction on the silicon substrate is dominant, out of the raw material gas to the silicon substrate. By forming a width of the exposed face in a range of 0.001 ?m to 1 ?m, the silicon thin film is formed in a state that the silicon thin film can be peeled off from the silicon substrate.

Abstract: The present invention relates to electrical contacts in a semiconductor device, and more particularly to methods and apparatuses for providing point contacts in a polysilicon emitter or HIT type solar cell. According to certain aspects, the invention uses a dielectric layer interposed between the substrate and a conductive layer to provide a limited area over which junction current can flow. The benefit is that the metal grid conductors do not need to align to the contacts, and can be applied freely without registration. Another benefit of the invention is that it provides increased efficiency for poly emitter and HIT cells through use of point contacts to increase current density. A further benefit is that patterning can be accomplished using low cost methods such as inclusion masking, screen printing or laser ablation. A still further benefit is that final contacts do not need alignment to the point contacts, eliminating registration required for conventional point contact designs.

Abstract: A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

Abstract: A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.

Abstract: Disclosed are aluminum paste compositions, processes to form solar cells using the aluminum paste compositions, and the solar cells so-produced. The aluminum paste compositions comprise 0.003% to 9%, by weight of boron nitride; 27% to 89%, by weight of an aluminum powder, such that the weight ratio of aluminum powder to boron nitride is in the range of 9:1 to 9909:1; and 0.1% to 9%, by weight of an optional glass frit-free additive, the optional glass frit-free additive comprising amorphous silicon dioxide, crystalline calcium oxide organometallic compounds, metal salts, or mixtures thereof; and 10% to 70%, by weight of an organic vehicle, wherein the amounts in % by weight are based on the total weight of the aluminum paste composition.

Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.

Abstract: A solar cell is provided. The solar cell includes a silicon substrate, a back electrode, a doped silicon layer, and an upper electrode. The silicon substrate includes a lower surface, an upper surface opposite to the lower surface, and a plurality of three-dimensional nano-structures located on the upper surface. Each three-dimensional nano-structure has a stepped structure. The back electrode is located on and electrically connected to the lower surface of the silicon substrate. The doped silicon layer is attached to the three-dimensional nano-structures and the upper surface of the silicon substrate between the three-dimensional nano-structures. The upper electrode is located on at least part of the doped silicon layer. A method for making the solar cell is also provided.

Abstract: Growth and characterization of low cost, and high efficiency micro- and nanostructured p-n heterojunction solar cells through eutectic solidification are provided. Eutectic solidification results in self-assembly of lamellar or rod-like domains with length scales from hundreds of nanometers to micrometers that can be used for efficient extraction of minority carriers in metallurgical-grade materials. The material having a eutectic or near-eutectic composition can be used in making a low-cost and efficient inorganic solar cell.

Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention.

Abstract: A method of magnetically enhancing up-conversion components includes providing at least one of up-conversion material and sensitizer material (i.e. up-conversion components), generally in conjunction with a semiconductor solar cell, and positioning magnetic apparatus adjacent the up-conversion components to supply a magnetic field to the up-conversion components. The magnetic field has an intensity and direction selected to enhance operation of the up-conversion components.

Abstract: Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Abstract: The present invention relates to a photovoltaic cell, a method of manufacturing such photovoltaic cell, and to uses of such cell.

Abstract: A photovoltaic device that exhibits superior electric power generation efficiency due to suppression of diffusion of oxygen from a transparent electrode layer into a microcrystalline silicon p-layer. A photovoltaic device (100) comprises a transparent electrode layer (2) and one or more photovoltaic layers (3) stacked on a substrate (1), wherein at least one of the photovoltaic layers (3) comprises a p-type crystalline silicon layer (41), an i-type crystalline silicon layer (42) and an n-type silicon layer (43), and an amorphous silicon layer (7) is disposed between and adjacent to the transparent electrode layer (2) and the p-type crystalline silicon layer (41).

Abstract: The invention concerns a photovoltaic cell comprising a heterojunction between a crystalline semiconductor substrate (210) of first conductivity type and a first amorphous layer (220) in the same semiconductor material and of a second conductivity type opposite the first type and having a dopant concentration of between 1.1019 and 1.1022 atoms/cm3. The photovoltaic cell further comprises a second amorphous layer (225) of same conductivity type as the first layer and having a dopant concentration of between 1.1016 and 1.1018 atoms/cm3, said second layer being deposited directly on a first face of the substrate and being coated with said first layer. Finally, on a second face of the substrate opposite the first face, the cell comprises a third amorphous layer (260), in the same material as the substrate and of same conductivity type with a dopant concentration of between 1.1019 and 1.1022 atoms/cm3.

Abstract: The present invention provides a solar absorptive material for a solar selective surface of an absorber of solar radiation. The solar absorptive material comprises a dispersed metallic material and a receiving boundary through which the solar radiation is received. Further, the solar absorptive material comprises a first region and a second region. The first region being located at a position closer to the receiving boundary than the second region and the first region has an average volume fraction of the dispersed metallic material that is larger than that of the second region.

Abstract: Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method.

Abstract: An autonomous integrated circuit (IC) includes a solar cell formed on a bottom substrate of a silicon-on-insulator (SOI) substrate as a handle substrate; an insulating layer of the SOI substrate located on top of the solar cell; and a device layer formed on a top semiconductor layer of the SOI substrate located on top of the insulating layer, wherein a top contact of the device layer is electrically connected to a bottom contact of the solar cell such that the solar cell is enabled to power the device layer.

Abstract: A solar cell including: a silicon (Si) substrate; a buffer layer disposed on a side of the silicon substrate; a germanium (Ge) junction disposed on a side of the buffer layer opposite the silicon substrate; a first electrode electrically connected to the germanium junction; and a second electrode electrically connected to the germanium junction, wherein the buffer layer has a lattice constant that increases in a direction from the silicon substrate to the germanium junction.

Abstract: A solar energy collection system and components includes a vacuum and an air compressor. The system includes a plurality of flexible units each having a backing portion and a solar cell portion upwardly adjacent and coupled to the backing portion. Each backing portion includes adhesive and at least one channel in the adhesive. Each channel is configured for communication with the vacuum to withdraw air from the channel when the adhesive is initially coupled to a structure and for communication with an air compressor to provide air to the channel to separate the adhesive from the structure. Each solar cell portion has an electricity generating element. The structure for coupling units transfers electricity between units. Each unit has an electricity outlet for passing electricity generated by at least one generating element for storage or use.

Abstract: When a layered structure of a transparent electrode layer and a metal layer is formed as a back side electrode layer over a surface on a side opposite to a side of incidence of light of a thin film solar battery, a time when formation of the transparent electrode layer is completed and a time when formation of the metal layer is started are made to coincide for one substrate.

Abstract: Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

Abstract: An adjustable solar powerer having photovoltaic cells made of either silicon, polycrystalline or single-crystalline located on a stabilizing base converts solar power or artificial light into electric energy. This solar powerer is made up of unilateral flat and movable elements, each having unilaterally installed photovoltaic cells, these elements being connected with each other by a yoke and catch at one end, the yoke and pivot being connected to a tripod.

Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200° C. and about 800° C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of the carrier N2 gas to the reactive O2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C.

Abstract: A method for manufacturing an active layer of a solar cell is disclosed, the active layer manufactured including multiple micro cavities in sub-micrometer scale, which can increase the photoelectric conversion rate of a solar cell. The method comprises following steps: providing a substrate having multiple layers of nanospheres which are formed by the aggregated nanospheres; forming at least one silicon active layer to fill the inter-gap between the nanospheres and part of the surface of the substrate; and removing the nanospheres to form an active layer having plural micro cavities on the surface of the substrate. The present invention also provides a solar cell comprising: a substrate, an active layer, a transparent top-passivation, at least one front contact pad, and at least one back contact pad. The active layer locates on a surface of the substrate and has plural micro cavities whose diameter is less than one micrometer.

Abstract: A solar cell (100) includes a p-type amorphous semiconductor layer (11p), an n-type amorphous semiconductor layer (12n), and a recombination layer (R) interposed between the p-type amorphous semiconductor layer (11p) and the n-type amorphous semiconductor layer (12n).