Abstract: A polymer solar cell has an anode, cathode and an active layer. The anode has a surface area larger than the cathode. On the anode, in the area with no cathode, is a conducting element in electrical contact with the anode, having a higher conductivity than the anode and substantially surrounding the cathode in order to minimize the distance between any two points on the cathode and the conducting element. The conducting element allows electrons to travel a shorter distance in the anode and through a higher conducting path to an electrical contact.

Abstract: Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Abstract: The present invention provides a method of producing a nanocomposite film on a substrate. The method involves co-deposition of gaseous lead salt clusters in a conducting polymer film, such as a conductive polythiophene, on the substrate. The polymer film preferably is simultaneously deposited with the lead salt clusters, e.g., by co-depositing organic monomers and/or oligomers onto the substrate in the presence of gaseous lead salt clusters. Preferred lead salts are PbS, PbTe and PbSe. Devices and articles of manufacture including a nanocomposite film of the invention are also disclosed.

Abstract: A solar cell structure includes a substrate, a buffer layer on the substrate, a type II band alignment nanostructure layer on the buffer layer, a p-type area and an n-type area defined on the type II band alignment nanostructure layer, and a p-type metal electrode and an n-type metal electrode coated onto the p-type and n-type areas, respectively. The type II band alignment nanostructure layer is provided for distributing an electron current and a hole current in different channels to minimize the recombination of electrons and holes and improve the photoelectric conversion efficiency of the solar cell significantly.

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract: A conductive paste for forming electrodes, which makes it possible to form an electrode for a crystalline silicon substrate that is low in cost and has an equal degree of contact resistance and ohmic electrical contact, as compared to conventional silver electrode pastes, is obtained. It is a conductive paste for forming an electrode for a crystalline silicon substrate, comprising conductive particles, glass frits, an organic binder and a solvent, in which conductive paste is characterized by comprising zinc particles as the conductive particles.

Abstract: The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

Abstract: A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device.

Abstract: The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.

Abstract: A thick film conductive composition comprising electrically conductive material, rhodium-containing additive, one or more glass frits, and an organic medium.

Abstract: Provided is a high performance anti-spall laminate article comprising a bi-layer polymeric composite. The bi-layer composite includes a polymeric sheet and a poly(ethylene terephthalate) (PET) film laminated to each other. The PET film has a tensile modulus of about 600,000 psi or higher in both the machine direction (MD) and the transverse direction (TD), a shock brittleness index of about 55 Joules or higher in the machine direction and about 25 joules or higher in the transverse direction, and a percent elongation at break (EOB) of about 110-160 in the machine direction and about 60-110 in the transverse direction.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

Abstract: A method of forming a crystalline layer includes: disposing a heating layer on a substrate, wherein the heating layer is separated from the substrate by a support structure; and forming a crystalline layer on the heating layer using heat generated from the heating layer.

Abstract: To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species.

Abstract: A solar cell having high conversion efficiency and excellent flexibility is realized. A mica substrate or laminated mica substrate is used as substrate 1. The mica and laminated mica have high insulating property and heat resistance temperature, which can be selenized at an appropriate treatment temperature through vapor-phase selenization process, high conversion efficiency and excellent flexibility resultantly suitable for mass-production can be obtained. On the other hand, because the surfaces of the mica and laminated mica have large surface roughnesses, it is impossible to induce leakage to obtain high conversion efficiency in the case where a chalcopyrite based light absorbing layer 6 is simply formed. In the present invention, an intermediate layer 2 of ceramic based material and binder layer 4 are interposed between the mica substrate 1 and a molybdenum electrode 5.

Abstract: The present invention provides polymeric compositions that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

Abstract: The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

Abstract: Solar photovoltaic (PV) modules have the highest possible conversion of photons to electrons in order to optimize their sunlight-to-electricity energy conversion efficiency. The electric current and sunlight-to-electricity conversion efficiency of CdTe modules is increased by about 20% with a new module design that (1) allows more light to pass through the glass and top layers to reach the PV junction area while (2) protecting the module against manufacturability pitfalls (shorts, shunts, and weak diodes) that have previously prevented the successful development of any equivalent module.

Abstract: A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

Abstract: A solar cell is configured to include: a substrate (21); a conductive film (22) formed on the substrate (21); a compound semiconductor layer (23) formed on the conductive film (22), including a p-type semiconductor crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb; a n-type window layer (24) formed on the compound semiconductor layer (23), having apertures (29); and a n-type transparent conductive film formed on the n-type window layer (24) and on portions of the compound semiconductor layer (23) at the apertures of the n-type window layer (24). The compound semiconductor layer (23) includes high-resistance parts (23B), in portions of the compound semiconductor layer (23) in the vicinity of a surface thereof on a side opposite to the conductive film (22), and the high-resistance parts (23B) contain a n-type impurity doped in the p-type semiconductor crystal.

Abstract: A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.

Abstract: A hybrid photovoltaic device comprising a plurality of nanostructures embedded in a matrix of a photosensitive material including one or more layers. A combination of innovative structural aspects of the hybrid photovoltaic device results in significant improvements in collection of incident light from the solar spectrum, better absorption of light, and better collection of the photo-carriers generated in response to the incident light, thereby improving efficiency of the hybrid photovoltaic device.

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.

Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.

Abstract: The present invention is directed to different methods used in the formation of an ink, as well as being directed to the formation of layers used in the fabrication of a solar cell, particularly the absorber layer. In one embodiment, the invention is directed to formulating an ink comprising Cu-rich particles and solid Ga—In particles, wherein the step of formulating is carried out at a temperature such that no liquid phase is present within the solid Ga-In particles. In another embodiment, the specific steps taken during the formulation of the ink are described. In yet another embodiment, the process of using the formulated ink to obtain a precursor layer are described.

Abstract: An electrode paste for a solar cell comprising electrically conductive particles, lead-free glass frit, a resin binder and zinc oxide particles, wherein zinc oxide particles having a specific surface area of 6 m2/g or less are contained at 10% by weight or more based on the total amount of zinc oxide.

Abstract: A material set that can be used for making high aspect ratio lines includes a sacrificial feedstock comprising an organic polymer, a solvent, and one or more optional additives, and a functional material that forms a ribbon with the sacrificial feedstock without the sacrificial feedstock and the functional material substantially intermixing, wherein the sacrificial feedstock has a yield strength of greater than about 100 Pa or a viscosity of greater than about 104 cP at a shear rate of less than about 10 sec?1 to enable the ribbon to maintain structural integrity, and the sacrificial feedstock can be removed from the ribbon, leaving the functional material in place with an aspect ratio of greater than about 0.3.

Abstract: Described herein are a silicon semiconductor device with multiple busbars, and a conductive silver paste for use in the front side of a solar cell device.

Abstract: A first electrode layer 14 is formed on a mica substrate 54, and then first scribe portions 64 are disposed. Next, a light absorbing layer 16 and a buffer layer 18 are disposed on the first electrode layer 14, and through holes (second scribe portions 66) which penetrate from the upper end face of the buffer layer 18 to the lower end face of the mica substrate 54 are formed in a spot-like manner. Then, a second electrode layer 20 is disposed on the buffer layer 18. At this time, the lower end face of the second electrode layer 20 reaches the first electrode layer 14 along the inner peripheral walls of the second scribe portions 66. Furthermore, the second electrode layer 20 is scribed to dispose third scribe portions 70.

Abstract: Provided are a dye-sensitized solar cell with increased energy conversion efficiency, and a method of fabricating the same. The dye-sensitized solar cell is provided with a semiconductor electrode layer including hollow-shaped semiconductor particles and a dye layer adsorbed on the surface of the semiconductor electrode layer, and the dye layer is adsorbed on the outer and inner surfaces of the semiconductor particles.

Abstract: Disclosed is a photo-electrode for a dye-sensitized solar cell comprising a conductive substrate; a light absorbing porous film comprising nanoparticles of a first metal oxide, which is formed on the conductive substrate; a light scattering porous film comprising hollow spherical agglomerates of nanoparticles of a second metal oxide, which is formed on the light absorbing porous film; and a photosensitive dye adsorbed on the surface of the light absorbing metal oxide nanoparticles as well as on the surface of the hollow spherical agglomerates of the light scattering porous film.

Abstract: A dye-sensitized solar cell includes a first electrode layer, a photosensitive dye layer, a second electrode layer, an energy-level intermediary layer, a first substrate and a second substrate. The photosensitive dye layer is used to receive sunlight and convert the sunlight to electrons and holes for being released. The first electrode layer is disposed on one side of the photosensitive dye layer to receive the electrons generated from the photosensitive dye layer. The second electrode layer is disposed on the other side of the photosensitive dye layer to receive the holes generated from the photosensitive dye layer. The energy-level intermediary layer is positioned between the first electrode layer and the photosensitive dye layer, so as to improve an injection efficiency of electrons and to prevent the generation of counter current, and thereby enhancing photoelectric conversion efficiency of the cell.

Abstract: It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.

Abstract: A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.

Abstract: A solar cell unit comprising a solar cell and an at least partially transparent casing that encases the solar cell. The solar cell includes a nonplanar substrate defining a length of the solar cell, wherein a length of the nonplanar substrate is at least three times longer than a width of the nonplanar substrate. A back-electrode is disposed around all or a portion of the nonplanar substrate, and extends along all or a portion of the length of the nonplanar substrate. A semiconductor junction is disposed on the back-electrode, and has first and second layers, each of which has an inorganic semiconductor. An at least partially transparent conductive layer is disposed on the semiconductor junction. Optionally, filler material is disposed on the transparent conductive layer, which can for example be a liquid or gel.

Abstract: The invention relates to ÿ-substituted porphyrins, methods for their synthesis, and their use in the preparation of photoelectric materials. In particular, the invention relates to solid state photoelectric devices, including solar cells and photodetectors, incorporating these photoelectric materials, with improved photon-to-current conversion efficiencies.

Abstract: Structures and methods are provided for forming substrates having surface coatings thereon. In one aspect, a structure is provided including a substrate, a surface coating formed on the surface of the substrate, wherein the surface coating comprises a monolayer of dielectric particles, and a dielectric layer having a thickness of less than a height of the dielectric particles. In another aspect of the invention, a method is provided for processing a substrate including providing a substrate having a surface, exposing a solution comprising dielectric particles to the substrate surface, forming a monolayer of dielectric particles from the solution on the substrate surface, depositing a dielectric layer on the substrate surface at a thickness of less than the height of the dielectric particles, and exposing the substrate to a thermal process.

Abstract: An apparatus (and a method of making the apparatus) that includes a first electrode, self-assembled photovoltaic layer(s) formed over the first electrode, and a second electrode formed over the self-assembled photovoltaic layer(s). The self-assembled photovoltaic layer(s) may be flexible (e.g. include polymer material and quantum dots). The self-assembled photovoltaic layer(s) may be formed at approximately room temperature.

Abstract: Photovoltaic devices or solar cells are provided. More particularly, the present invention provides photovoltaic devices having IR and/or UV absorbing nanostructured layers that increase efficiency of solar cells. In some embodiments the nanostructured materials are integrated with one or more of: crystalline silicon (single crystal or polycrystalline) solar cells and thin film (amorphous silicon, microcrystalline silicon, CdTe, CIGS and III-V materials) solar cells whose absorption is primarily in the visible region. In some embodiments the nanoparticle materials are comprised of quantum dots, rods or multipods of various sizes.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: A single unit cell (herein, referred to as “a unit cell”) is formed out of a lower electrode layer (Mo electrode layer) 2 formed on a substrate 1, a light-absorbing layer (CIGS LIGHT-ABSORBING LAYER) 3 including copper, indium, gallium, and selenium, a high-resistance buffer layer thin film 4 formed of InS, ZnS, CdS, and the like on the light-absorbing layer thin film, and an upper electrode thin film (TCO) 5 formed of ZnOAl and the like. In order to connect the unit cell, a part of a contact electrode 6 connecting the upper electrode and the lower electrode is formed to overlap with a dividing line of the lower electrode 2 formed by a first scribing.

Abstract: The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a material of the formula (I), of the formula (II) or of a combination thereof: (Zn1-xMgxTe)1-y(MnTem)y and ??(I) (ZnTe)1-y(MeaMb)y, where ??(II) MnTem and MeaMb are each a dopant in which M is at least one element selected from the group consisting of Si, Ge, Sn. Pb, Sb and Bi and Me is at least one element selected from the group consisting of mg and Zn, and x=0 to 0.5 y=0.0001 to 0.05 n=1 to 2 m=0.5 to 4 a=1 to 5 and b=1 to 3.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic device can include a conductive diamond-like carbon cathode having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer can be coupled adjacent and between the diamond-like carbon cathode and an anode. The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.

Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention.

Abstract: A dye-sensitized solar cell including: a first electrode; a light absorption layer on one side of the first electrode; a second electrode facing the light absorption layer on the first electrode; and an electrolyte between the first electrode and the second electrode, wherein the light absorption layer includes: a photosensitive dye adsorbed to a porous membrane, the porous membrane including semiconductor particulates and an -M-O-M- oxide network about the semiconductor particulates, wherein the M is a transition metal.

Abstract: A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer.

Abstract: A photovoltaic cell includes a first electrode, a second electrode, and a photovoltaic material located between and in electrical contact with the first and the second electrodes. The photovoltaic material comprises i) semiconductor nanocrystals having a bang gap that is significantly smaller than peak solar radiation energy to exhibit a multiple exciton effect in response to irradiation by the solar radiation; and/or ii) a first and a second set of semiconductor nanocrystals and the nanocrystals of the first set have a different band gap energy than the nanocrystals of the second set. A width of the photovoltaic material in a direction from the first electrode to the second electrode is less than about 200 nm while a height of the photovoltaic material in a direction substantially perpendicular to the width of the photovoltaic material is at least 1 micron.

Abstract: Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) based front electrode for use in a photovoltaic device is of or includes zinc oxide, or zinc aluminum oxide, doped with yttrium (Y). In certain example embodiments, the addition of the yttrium (Y) to the conductive zinc oxide or zinc aluminum oxide is advantageous in that potential conductivity loss of the electrode can be reduced or prevented. In other example embodiments, a low-E coating may include a layer of or including zinc oxide, or zinc aluminum oxide, doped with yttrium (Y).

Abstract: A thin film solar cell module of see-through type and a method of fabricating the same are provided. First, bi-directional openings are formed in the transparent electrode material layer to avoid problems that affect the production yield such as short-circuit resulted by the high-temperature laser scribing process. Moreover, the thin film solar cell module of see-through type has openings that expose the transparent substrate without covering the transparent electrode material layer to increase the transmittance of the cells.