Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.

Abstract: In a structure and method for connecting junction box to solar cell module, at least one support pin is embedded in the laminated layers of the solar cell module. The support pin includes at least a plug section, a support section and a stop section. The support section is embedded in the laminated layers of the solar cell module and can therefore provide support strength to the junction box. The stop section is pressed against an end surface of the solar cell module to enable a limiting and lateral supporting effect. The plug section is exposed from a layer of fixing sealant applied on the end surface of the solar cell module for plugging in and accordingly holding to a socket section of the junction box, protecting the junction box against separating from the solar cell module before the fixing sealant is fully cured.

Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.

Abstract: A target adapted for a sputtering process for making a compound film layer of a thin film solar cell includes a composition having a formula of CuB1-xCxSeyS2-y, wherein B and C are independently selected from Group IIIA elements; x ranges from 0 to 1; and y ranges from 0 to 2. A thin film solar cell made by sputtering using the target and a method of making the thin film solar cell are also disclosed. Specifically, the thin film solar cell includes a compound film formed with substantially columnar grains. The energy gap of the compound film layer may be varied using different work pressures during a sputtering process. At least one interlayer may be included in the compound film layer to control the size of columnar grains in the compound film layer.

Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength ?1 and a second photoactive region having a characteristic absorption wavelength ?2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that ?1 is at least about 10% different from ?2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

Abstract: Disclosed is a polyimide film prepared from an aromatic tetracarboxylic acid component and an aromatic diamine component, which has a dimensional change from 25° C. to 500° C. within a range of from ?0.3% to +0.6% based on the initial dimension at 25° C. The polyimide film may be used as a substrate for a CIS solar cell.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

Abstract: The assemblies of the present invention comprise an electrode, an absorber layer and a polyimide film. The polyimide film contains from about 40 to about 95 weight percent of a polyimide derived from: i. at least one aromatic dianhydride, at least about 85 mole percent of such aromatic dianhydride being a rigid rod type dianhydride, and ii. at least one aromatic diamine, at least about 85 mole percent of such aromatic diamine being a rigid rod type diamine. The polyimide films of the present disclosure further comprise a filler that: i. is less than about 800 nanometers in at least one dimension; ii. has an aspect ratio greater than about 3:1 ; iii. is less than the thickness of the polyimide film in all dimensions; and iv. is present in an amount from about 5 to about 60 weight percent of the total weight of the polyimide film.

Abstract: A nanoparticle composition is disclosed comprising a copper indium gallium selenide, a copper indium sulfide, or a combination thereof. Also disclosed is a layer comprising the nanoparticle composition. A photovoltaic device comprising the nanoparticle composition and/or the absorbing layer is disclosed. Also disclosed are methods for producing the nanoparticle compositions, absorbing layers, and photovoltaic devices described herein.

Abstract: A photovoltaic device includes a built-in electric field generated by electric dipoles of nanoparticles embedded in a photoconducting host.

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract: A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.

Abstract: Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx).

Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions for semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making a CAIGS, CAIS or CAGS material by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: This invention relates to processes for materials using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to CIGS, CIS or CGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate, thereby producing a material.

Abstract: The present invention provides a transparent electroconductive oxide layer having a high transmittance and a high electroconductivity and further a thin-film photoelectric converter having a high photoelectric conversion efficiency by applying the transparent electroconductive oxide layer to a transparent electrode layer of a photoelectric converter. The transparent electroconductive oxide layer in the present invention is deposited on a transparent substrate with a first and a second impurities contained in the transparent electroconductive oxide layer, especially in the vicinity of a surface of the layer in a higher concentration, and carbon atoms contained in the vicinity of the surface of the layer, thereby achieving a high transmittance and a high electroconductivity simultaneously and thus solving the problem.

Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract: A method for fabricating a chalcopyrite-type thin film solar cell includes a first step of forming onto a Mo electrode layer 2 a precursor including an In metal layer and a Cu—Ga alloy layer by sputtering, a second step of attaching an alkali-metal solution onto the precursor, a selenization step of subjecting the substrate 1 which has undergone both the first and the second steps to a selenization treatment, and a transparent electrode forming step of depositing an optically transparent conductive layer. As the alkali-metal solution, an aqueous solution of an alkali metal compound, such as sodium tetraborate, sodium sulfide, and sodium aluminum sulfate, can be used.

Abstract: Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises: a first electrically conductive layer; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution, an asphaltene dye, and a second electrically conductive layer.

Abstract: A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na.

Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.

Abstract: The present invention relates to a thin-film solar cell and a process for producing it, where the rear-side layer structure of the thin-film solar cell has a multilayer structure comprising a metallic bonding layer, a transition layer and an Ag-containing reflector layer and displays a high degree of reflection and good adhesion of the layer system.

Abstract: Solar cells and methods for manufacturing solar cells and/or components or layers thereof are disclosed. An example method for manufacturing a multi-bandgap quantum dot layer for use in a solar cell may include providing a first precursor compound, providing a second precursor compound, and combining a portion of the first precursor compound with a portion of the second precursor compound to form a multi-bandgap quantum dot layer that includes a plurality of quantum dots that differ in bandgap.

Abstract: Solar cell structures including an n-type semiconductor layer, an i-type semiconductor layer on the n-type semiconductor layer, and a p-type semiconductor layer on the i-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material.

Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

Abstract: The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II): ZnTe??(I) Zn1-xMnxTe??(II) where x is from 0.01 to 0.99, and a particular proportion of tellurium ions in the photovoltaically active semiconductor material has been replaced by halogen ions and nitrogen ions and the halogen ions are selected from the group consisting of fluoride, chloride and bromide and mixtures thereof.

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.

Abstract: Provided is a process for preparing an absorption layer of a solar cell composed of a 1B-3A-Se compound, comprising applying a metal selenide nanoparticle as a precursor material to a base material and subjecting the applied nanoparticle to thermal processing, whereby the crystal size of the 1B-3A-Se compound can be increased as compared to a conventional method using a metal in the form of an oxide as a precursor material, consequently resulting in an enhanced efficiency of the solar cell, and the manufacturing process can be simplified with omission of hydrogen reduction and selenidation processes.

Abstract: A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer.

Abstract: An electrode for photoelectric conversion elements having high initial characteristics and excellent durability, a manufacturing method of the electrode for photoelectric conversion elements, and a dye-sensitized solar cell are provided. An electrode for photoelectric conversion elements according to the present invention has a structure in which a metal oxide layer containing zinc oxide is provided on a base. The metal oxide layer has a plurality of bump-like protrusions formed so as to protrude radially from the base side, and also has an emission peak in a region of 350 to 400 nm in cathodoluminescence measurement. The metal oxide layer is preferably heat treated at 220 to 500° C.

Abstract: A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed.

Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.

Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Abstract: A solar cell is provided as one capable of increasing the open voltage when compared with the conventional solar cells. A solar cell according to the present invention has a p-type semiconductor layer containing a group Ib element, a group IIIb element, and a group VIb element, and an n-type semiconductor layer containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer. A content of the group Ib element in the n-type semiconductor layer is from 15 to 21 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer, and a content of Zn in the n-type semiconductor layer is from 0.005 to 1.0 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer.

Abstract: Photovoltaic modules, as well as related systems, methods and components are disclosed. In some embodiments, a photovoltaic module can include a first photovoltaic cell including an electrode, a second photovoltaic cell including an electrode, and an interconnect. The electrode of the first photovoltaic cell can overlap the electrode of the second photovoltaic cell. The interconnect can electrically connect the electrode of the first photovoltaic cell and the electrode of the second photovoltaic cell. The interconnect can mechanically couple the first and second photovoltaic cells.

Abstract: The present invention relates to a flexible solar cell (10). The flexible solar cell includes a Al—Mg alloy substrate (11) having a first surface (110) and an opposing second surface (111). A first electrode layer (12), a semiconductor layer (13), and a second electrode layer (14), are sequentially formed on the first surface of the Al—Mg alloy substrate.

Abstract: Modules are disclosed. The modules can include a first photovoltaic cell including an electrode; and a second photovoltaic cell including an electrode having a bent end connected to the electrode of the first photovoltaic cell.

Abstract: A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.

Abstract: Modules are disclosed. The modules can include a first photovoltaic cell including an electrode, a second photovoltaic cell including an electrode, and an interconnect disposed in the electrode of the first photovoltaic cell and disposed in the electrode of the second photovoltaic cell so that the electrode of the first photovoltaic cell and the electrode of the second photovoltaic cell are connected.

Abstract: A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product.

Abstract: A method and corresponding system for providing a uniform nanowire array including uniform nanowires composed of at least three elements is presented. An embodiment of the method includes growing an array of two-element nanowires, and thereafter uniformly doping or alloying each two-element nanowire, with respect to each other two-element nanowire, with at least one doping or alloying element through a wet chemical synthesis with a precursor solution, to produce the uniform array of nanowires composed of at least three elements. The two-element nanowire can include Zn and O, and the at least one doping or alloying element can be Mg, Cd, Mn, Cu, Be, Fe, and Co. Applications of the three-element nanowire array include solar cells and light emitting diodes with improved efficiencies over existing technologies.

Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.

Abstract: A solar cell array including a first solar cell with an integral bypass diode and an adjacent second solar cell and two discrete metal interconnection members coupling the anode of the bypass diode of the first cell with the anode of the second solar cell.

Abstract: Methods for sputter depositing a transparent conductive layer are provided in the present invention. The transparent conductive layer may be utilized as a contact layer on a substrate or a back reflector in a photovoltaic device. In one embodiment, the method includes supplying a gas mixture into a processing chamber, sputtering source material from a target disposed in the processing chamber, wherein the target has dopants doped into a base material, wherein the dopants are selected from a group consisting of boron containing materials, titanium containing materials, tantalum containing materials, tungsten containing materials, alloys thereof, or combinations thereof, and reacting the sputtered material with the gas mixture to deposit a transparent conductive layer on a substrate disposed in the processing chamber.

Abstract: A method for forming a thin film photovoltaic device. The method provides a transparent substrate including a surface region. A first electrode layer overlies the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. At least the multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a bulk copper indium disulfide. The bulk copper indium disulfide material has a surface region characterized by a copper poor surface region having a copper to indium atomic ratio of less than about 0.95:1 and n-type impurity characteristics. The bulk copper indium disulfide material excluding the copper poor surface region forms an absorber region and the copper poor surface region forms at least a portion of a window region for the thin film photovoltaic device.

Abstract: The invention relates to a circuit arrangement for controlling/regulating photovoltaic systems (10b) which comprise a plurality of solar generators (14b) connected in series or/and connected in parallel. In order to prevent power loss of solar generators, which is based on the fact that not all solar generators are operated in the MPP thereof, each solar generator is associated with a variable energy bypass (68b) that is controlled/regulated in such a manner that each solar generator (14b) is operated continuously in its respective current specific MPP.

Abstract: A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device.

Abstract: A conductive paste for solar cells, which makes it possible to form an electrode for a solar cell that is low in cost and has an equal degree of contact resistance and ohmic electrical contact, as compared to conventional silver electrode pastes, is obtained. It is a conductive paste for solar cells, comprising conductive particles, glass fits, an organic binder and a solvent, in which paste the conductive particles comprise (A) silver and (B) one or more selected from the group consisting of copper, nickel, aluminum, zinc and tin, and the weight proportion (A):(B) is 5:95 to 90:10.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: A chalcopyrite type solar cell has a mica aggregate substrate formed by binding mica particulates with a resin. A multilayer body consisting of a first electrode, a light absorption layer and a second electrode is formed on the mica aggregate substrate with a smoothing layer and a binder layer interposed between the substrate and the body. The smoothing layer is preferably made of SiN or SiO2, and the binder layer is made of TiN or TaN.