Copper, Lead, Or Zinc Containing Patents (Class 136/265)
  • Patent number: 7923628
    Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: April 12, 2011
    Assignee: International Business Machines Corporation
    Inventors: Hariklia Deligianni, Harold J. Hovel, Raman Vaidyanathan
  • Publication number: 20110079284
    Abstract: In a structure and method for connecting junction box to solar cell module, at least one support pin is embedded in the laminated layers of the solar cell module. The support pin includes at least a plug section, a support section and a stop section. The support section is embedded in the laminated layers of the solar cell module and can therefore provide support strength to the junction box. The stop section is pressed against an end surface of the solar cell module to enable a limiting and lateral supporting effect. The plug section is exposed from a layer of fixing sealant applied on the end surface of the solar cell module for plugging in and accordingly holding to a socket section of the junction box, protecting the junction box against separating from the solar cell module before the fixing sealant is fully cured.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 7, 2011
    Inventor: KAI WU
  • Patent number: 7919710
    Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: April 5, 2011
    Assignee: Nexpower Technology Corp.
    Inventors: Wei-Lun Lu, Feng-Chien Hsieh, Bae-Heng Tseng
  • Publication number: 20110073186
    Abstract: A target adapted for a sputtering process for making a compound film layer of a thin film solar cell includes a composition having a formula of CuB1-xCxSeyS2-y, wherein B and C are independently selected from Group IIIA elements; x ranges from 0 to 1; and y ranges from 0 to 2. A thin film solar cell made by sputtering using the target and a method of making the thin film solar cell are also disclosed. Specifically, the thin film solar cell includes a compound film formed with substantially columnar grains. The energy gap of the compound film layer may be varied using different work pressures during a sputtering process. At least one interlayer may be included in the compound film layer to control the size of columnar grains in the compound film layer.
    Type: Application
    Filed: September 13, 2010
    Publication date: March 31, 2011
    Inventors: Chih-Huang LAI, Chia-Hsiang CHEN, Yi-Chang CHEN
  • Patent number: 7915701
    Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength ?1 and a second photoactive region having a characteristic absorption wavelength ?2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that ?1 is at least about 10% different from ?2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.
    Type: Grant
    Filed: May 19, 2008
    Date of Patent: March 29, 2011
    Assignee: The Trustees of Princeton University
    Inventors: Stephen Forrest, Jiangeng Xue, Soichi Uchida, Barry P. Rand
  • Publication number: 20110067760
    Abstract: Disclosed is a polyimide film prepared from an aromatic tetracarboxylic acid component and an aromatic diamine component, which has a dimensional change from 25° C. to 500° C. within a range of from ?0.3% to +0.6% based on the initial dimension at 25° C. The polyimide film may be used as a substrate for a CIS solar cell.
    Type: Application
    Filed: May 20, 2009
    Publication date: March 24, 2011
    Applicant: UBE INDUSTRIES, LTD.
    Inventors: Hiroto Shimokawa, Takeshi Uekido, Ken Kawagishi, Hiroaki Yamaguchi
  • Publication number: 20110061737
    Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.
    Type: Application
    Filed: November 21, 2010
    Publication date: March 17, 2011
    Applicant: SOLEXANT CORP.
    Inventors: Charlie Hotz, Puther D. Paulson, Craig Leidholm, Damoder Reddy
  • Publication number: 20110056539
    Abstract: The assemblies of the present invention comprise an electrode, an absorber layer and a polyimide film. The polyimide film contains from about 40 to about 95 weight percent of a polyimide derived from: i. at least one aromatic dianhydride, at least about 85 mole percent of such aromatic dianhydride being a rigid rod type dianhydride, and ii. at least one aromatic diamine, at least about 85 mole percent of such aromatic diamine being a rigid rod type diamine. The polyimide films of the present disclosure further comprise a filler that: i. is less than about 800 nanometers in at least one dimension; ii. has an aspect ratio greater than about 3:1 ; iii. is less than the thickness of the polyimide film in all dimensions; and iv. is present in an amount from about 5 to about 60 weight percent of the total weight of the polyimide film.
    Type: Application
    Filed: May 18, 2009
    Publication date: March 10, 2011
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Brian C Auman, Salah Boussaad, Thomas Edward Carney, Kostantinos Kourtakis, John W. Simmons
  • Publication number: 20110056564
    Abstract: A nanoparticle composition is disclosed comprising a copper indium gallium selenide, a copper indium sulfide, or a combination thereof. Also disclosed is a layer comprising the nanoparticle composition. A photovoltaic device comprising the nanoparticle composition and/or the absorbing layer is disclosed. Also disclosed are methods for producing the nanoparticle compositions, absorbing layers, and photovoltaic devices described herein.
    Type: Application
    Filed: May 7, 2009
    Publication date: March 10, 2011
    Inventors: Brian A. Korgel, Matthew G. Panthani, Brian W. Goodfellow, Vahid A. Akhavan, Bonil Koo
  • Publication number: 20110048534
    Abstract: A photovoltaic device includes a built-in electric field generated by electric dipoles of nanoparticles embedded in a photoconducting host.
    Type: Application
    Filed: January 21, 2009
    Publication date: March 3, 2011
    Applicant: UNIVERSITY OF TOLEDO
    Inventors: Diana Shvydka, Victor Karpov
  • Publication number: 20110048538
    Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.
    Type: Application
    Filed: October 6, 2009
    Publication date: March 3, 2011
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: JING-SHUN HUANG, CHING-FUH LIN
  • Patent number: 7897020
    Abstract: A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: March 1, 2011
    Assignee: MiaSole
    Inventors: Neil M. Mackie, Daniel R. Juliano, Robert B. Zubeck
  • Patent number: 7888594
    Abstract: Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx).
    Type: Grant
    Filed: November 20, 2007
    Date of Patent: February 15, 2011
    Assignee: Guardian Industries Corp.
    Inventors: Yiwei Lu, Willem den Boer, Alexey Krasnov
  • Publication number: 20110030800
    Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions for semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making a CAIGS, CAIS or CAGS material by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.
    Type: Application
    Filed: August 26, 2010
    Publication date: February 10, 2011
    Applicant: PRECURSOR ENERGETICS, INC.
    Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta, Qinglan Huang
  • Publication number: 20110030799
    Abstract: This invention relates to processes for materials using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to CIGS, CIS or CGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate, thereby producing a material.
    Type: Application
    Filed: August 26, 2010
    Publication date: February 10, 2011
    Applicant: PRECURSOR ENERGETICS, INC.
    Inventors: Kyle L. Fujdala, Wayne A. Chomitz, Zhongliang Zhu, Matthew C. Kuchta
  • Publication number: 20110011461
    Abstract: The present invention provides a transparent electroconductive oxide layer having a high transmittance and a high electroconductivity and further a thin-film photoelectric converter having a high photoelectric conversion efficiency by applying the transparent electroconductive oxide layer to a transparent electrode layer of a photoelectric converter. The transparent electroconductive oxide layer in the present invention is deposited on a transparent substrate with a first and a second impurities contained in the transparent electroconductive oxide layer, especially in the vicinity of a surface of the layer in a higher concentration, and carbon atoms contained in the vicinity of the surface of the layer, thereby achieving a high transmittance and a high electroconductivity simultaneously and thus solving the problem.
    Type: Application
    Filed: March 13, 2009
    Publication date: January 20, 2011
    Applicant: KANEKA CORPORATION
    Inventors: Mitsuru Ichikawa, Fumiyasu Sezaki, Kenji Yamamoto
  • Publication number: 20110011460
    Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).
    Type: Application
    Filed: December 18, 2009
    Publication date: January 20, 2011
    Applicant: APPLIED QUANTUM TECHNOLOGY
    Inventors: Mariana Rodica Munteanu, Erol Girt
  • Patent number: 7871502
    Abstract: A method for fabricating a chalcopyrite-type thin film solar cell includes a first step of forming onto a Mo electrode layer 2 a precursor including an In metal layer and a Cu—Ga alloy layer by sputtering, a second step of attaching an alkali-metal solution onto the precursor, a selenization step of subjecting the substrate 1 which has undergone both the first and the second steps to a selenization treatment, and a transparent electrode forming step of depositing an optically transparent conductive layer. As the alkali-metal solution, an aqueous solution of an alkali metal compound, such as sodium tetraborate, sodium sulfide, and sodium aluminum sulfate, can be used.
    Type: Grant
    Filed: April 12, 2005
    Date of Patent: January 18, 2011
    Assignee: Honda Motor Co., Ltd.
    Inventor: Satoshi Aoki
  • Publication number: 20110005589
    Abstract: Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises: a first electrically conductive layer; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution, an asphaltene dye, and a second electrically conductive layer.
    Type: Application
    Filed: July 9, 2010
    Publication date: January 13, 2011
    Applicant: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Russell R. Chianelli, Karina Castillo, Vipin Gupta, Ali M. Qudah, Brenda Torres
  • Patent number: 7867551
    Abstract: A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: January 11, 2011
    Assignee: SoloPower, Inc.
    Inventor: Bulent M. Basol
  • Patent number: 7858872
    Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: December 28, 2010
    Assignee: Solexant Corp.
    Inventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy
  • Publication number: 20100313943
    Abstract: The present invention relates to a thin-film solar cell and a process for producing it, where the rear-side layer structure of the thin-film solar cell has a multilayer structure comprising a metallic bonding layer, a transition layer and an Ag-containing reflector layer and displays a high degree of reflection and good adhesion of the layer system.
    Type: Application
    Filed: June 9, 2010
    Publication date: December 16, 2010
    Inventors: Hartmut Knoll, Markus Renno, Peter Lechner
  • Publication number: 20100313957
    Abstract: Solar cells and methods for manufacturing solar cells and/or components or layers thereof are disclosed. An example method for manufacturing a multi-bandgap quantum dot layer for use in a solar cell may include providing a first precursor compound, providing a second precursor compound, and combining a portion of the first precursor compound with a portion of the second precursor compound to form a multi-bandgap quantum dot layer that includes a plurality of quantum dots that differ in bandgap.
    Type: Application
    Filed: June 12, 2009
    Publication date: December 16, 2010
    Applicant: Honeywell International Inc.
    Inventors: Linan Zhao, Zhi Zheng, Marilyn Wang, Xuanbin Liu, Huili Tang
  • Publication number: 20100307588
    Abstract: Solar cell structures including an n-type semiconductor layer, an i-type semiconductor layer on the n-type semiconductor layer, and a p-type semiconductor layer on the i-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material.
    Type: Application
    Filed: May 27, 2010
    Publication date: December 9, 2010
    Inventors: Jung-hyun Lee, Dong-joon Ma
  • Publication number: 20100307568
    Abstract: A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
    Type: Application
    Filed: June 3, 2010
    Publication date: December 9, 2010
    Applicant: First Solar, Inc.
    Inventors: Long Cheng, Akhlesh Gupta, Anke Abken, Benyamin Buller
  • Patent number: 7847187
    Abstract: The invention relates to a photovoltaic cell comprising a photovoltaically active semiconductor material, wherein the photovoltaically active semiconductor material is a p- or n-doped semiconductor material comprising a binary compound of the formula (I) or a ternary compound of the formula (II): ZnTe??(I) Zn1-xMnxTe??(II) where x is from 0.01 to 0.99, and a particular proportion of tellurium ions in the photovoltaically active semiconductor material has been replaced by halogen ions and nitrogen ions and the halogen ions are selected from the group consisting of fluoride, chloride and bromide and mixtures thereof.
    Type: Grant
    Filed: October 26, 2005
    Date of Patent: December 7, 2010
    Assignee: BASF Aktiengesellschaft
    Inventor: Hans-Josef Sterzel
  • Patent number: 7838763
    Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: November 23, 2010
    Assignee: MiaSole
    Inventor: Dennis Hollars
  • Patent number: 7838063
    Abstract: Provided is a process for preparing an absorption layer of a solar cell composed of a 1B-3A-Se compound, comprising applying a metal selenide nanoparticle as a precursor material to a base material and subjecting the applied nanoparticle to thermal processing, whereby the crystal size of the 1B-3A-Se compound can be increased as compared to a conventional method using a metal in the form of an oxide as a precursor material, consequently resulting in an enhanced efficiency of the solar cell, and the manufacturing process can be simplified with omission of hydrogen reduction and selenidation processes.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: November 23, 2010
    Assignee: LG Chem, Ltd.
    Inventor: Seokhyun Yoon
  • Patent number: 7825329
    Abstract: A method of forming a Group IBIIIAVIA solar cell absorber which includes an active portion and an electrically resistive portion. The absorber is interposed between a base layer and a transparent conductive layer. The electrically resistive portion increases resistance between the base layer and a connector layer that is formed on the transparent conductive layer. The connector layer comprises the busbar and the fingers of the solar cell. The busbar is preferably placed over the electrically resistive portion while the fingers extend over the active portion of the absorber layer.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: November 2, 2010
    Assignee: SoloPower, Inc.
    Inventor: Bulent M. Basol
  • Publication number: 20100243060
    Abstract: An electrode for photoelectric conversion elements having high initial characteristics and excellent durability, a manufacturing method of the electrode for photoelectric conversion elements, and a dye-sensitized solar cell are provided. An electrode for photoelectric conversion elements according to the present invention has a structure in which a metal oxide layer containing zinc oxide is provided on a base. The metal oxide layer has a plurality of bump-like protrusions formed so as to protrude radially from the base side, and also has an emission peak in a region of 350 to 400 nm in cathodoluminescence measurement. The metal oxide layer is preferably heat treated at 220 to 500° C.
    Type: Application
    Filed: March 19, 2010
    Publication date: September 30, 2010
    Applicant: TDK CORPORATION
    Inventors: Tokuhiko Handa, Atsushi Monden
  • Publication number: 20100243056
    Abstract: A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed.
    Type: Application
    Filed: March 31, 2009
    Publication date: September 30, 2010
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Bastiaan Arie Korevaar, James Neil Johnson, Dalong Zhong, Yangang Andrew Xi, Faisal Razi Ahmad
  • Publication number: 20100243044
    Abstract: A photovoltaic cell structure includes a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistivity layer. The metal layer is formed on the substrate. The p-type semiconductor layer is formed on the metal layer and may include a compound of copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound of at least two of copper, selenium or sulfur. The n-type semiconductor layer exhibits photo catalyst behavior that can increase carrier mobility by receiving light, and is formed on the p-type semiconductor layer, thereby forming a p-n junction. The transparent conductive layer is formed on the n-type semiconductor layer. The high resistivity layer is formed between the metal layer and the transparent conductive layer.
    Type: Application
    Filed: July 23, 2009
    Publication date: September 30, 2010
    Inventors: FENG FAN CHANG, HSIN HUNG LIN, HSIN CHIH LIN, CHI HAU HSIEH, TZUNG ZONE LI
  • Patent number: 7804149
    Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.
    Type: Grant
    Filed: April 2, 2007
    Date of Patent: September 28, 2010
    Assignee: The University of Utah Research Foundation
    Inventors: Ashutosh Tiwari, Michael R. Snure
  • Publication number: 20100229951
    Abstract: A solar cell is provided as one capable of increasing the open voltage when compared with the conventional solar cells. A solar cell according to the present invention has a p-type semiconductor layer containing a group Ib element, a group IIIb element, and a group VIb element, and an n-type semiconductor layer containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer. A content of the group Ib element in the n-type semiconductor layer is from 15 to 21 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer, and a content of Zn in the n-type semiconductor layer is from 0.005 to 1.0 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer.
    Type: Application
    Filed: March 5, 2010
    Publication date: September 16, 2010
    Applicant: TDK CORPORATION
    Inventors: Yasuhiro AIDA, Masato SUSUKIDA
  • Patent number: 7781672
    Abstract: Photovoltaic modules, as well as related systems, methods and components are disclosed. In some embodiments, a photovoltaic module can include a first photovoltaic cell including an electrode, a second photovoltaic cell including an electrode, and an interconnect. The electrode of the first photovoltaic cell can overlap the electrode of the second photovoltaic cell. The interconnect can electrically connect the electrode of the first photovoltaic cell and the electrode of the second photovoltaic cell. The interconnect can mechanically couple the first and second photovoltaic cells.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: August 24, 2010
    Assignee: Konarka Technologies, Inc.
    Inventors: Russell Gaudiana, Alan Montello, Edmund Montello
  • Patent number: 7777127
    Abstract: The present invention relates to a flexible solar cell (10). The flexible solar cell includes a Al—Mg alloy substrate (11) having a first surface (110) and an opposing second surface (111). A first electrode layer (12), a semiconductor layer (13), and a second electrode layer (14), are sequentially formed on the first surface of the Al—Mg alloy substrate.
    Type: Grant
    Filed: November 1, 2007
    Date of Patent: August 17, 2010
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Ga-Lane Chen
  • Patent number: 7777128
    Abstract: Modules are disclosed. The modules can include a first photovoltaic cell including an electrode; and a second photovoltaic cell including an electrode having a bent end connected to the electrode of the first photovoltaic cell.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: August 17, 2010
    Assignee: Konarka Technologies, Inc.
    Inventors: Alan Montello, Kevin Oliver, Kethinni G. Chittibabu
  • Publication number: 20100200067
    Abstract: A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
    Type: Application
    Filed: February 11, 2009
    Publication date: August 12, 2010
    Applicant: United Solar Ovonic LLC
    Inventors: Shengzhong Liu, Yanhua Zhou, Chaolan Hu, Arindam Banerjee, Jeffrey Yang, Subhendu Guha
  • Patent number: 7772484
    Abstract: Modules are disclosed. The modules can include a first photovoltaic cell including an electrode, a second photovoltaic cell including an electrode, and an interconnect disposed in the electrode of the first photovoltaic cell and disposed in the electrode of the second photovoltaic cell so that the electrode of the first photovoltaic cell and the electrode of the second photovoltaic cell are connected.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: August 10, 2010
    Assignee: Konarka Technologies, Inc.
    Inventors: Lian Li, Alan Montello, Edmund Montello, Russell Gaudiana
  • Patent number: 7767904
    Abstract: A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: August 3, 2010
    Assignee: HelioVolt Corporation
    Inventor: Billy J. Stanbery
  • Publication number: 20100180950
    Abstract: A method and corresponding system for providing a uniform nanowire array including uniform nanowires composed of at least three elements is presented. An embodiment of the method includes growing an array of two-element nanowires, and thereafter uniformly doping or alloying each two-element nanowire, with respect to each other two-element nanowire, with at least one doping or alloying element through a wet chemical synthesis with a precursor solution, to produce the uniform array of nanowires composed of at least three elements. The two-element nanowire can include Zn and O, and the at least one doping or alloying element can be Mg, Cd, Mn, Cu, Be, Fe, and Co. Applications of the three-element nanowire array include solar cells and light emitting diodes with improved efficiencies over existing technologies.
    Type: Application
    Filed: November 13, 2009
    Publication date: July 22, 2010
    Applicant: University of Connecticut
    Inventors: Pu-Xian Gao, Paresh Shimpi
  • Publication number: 20100170564
    Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.
    Type: Application
    Filed: September 3, 2009
    Publication date: July 8, 2010
    Inventors: Jeroen K. J. Van Duren, Matthew R. Robinson, Craig Leidholm
  • Patent number: 7732705
    Abstract: A solar cell array including a first solar cell with an integral bypass diode and an adjacent second solar cell and two discrete metal interconnection members coupling the anode of the bypass diode of the first cell with the anode of the second solar cell.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: June 8, 2010
    Assignee: Emcore Solar Power, Inc.
    Inventors: Mark A. Stan, Marvin Bradford Clevenger, Paul R. Sharps
  • Publication number: 20100132783
    Abstract: Methods for sputter depositing a transparent conductive layer are provided in the present invention. The transparent conductive layer may be utilized as a contact layer on a substrate or a back reflector in a photovoltaic device. In one embodiment, the method includes supplying a gas mixture into a processing chamber, sputtering source material from a target disposed in the processing chamber, wherein the target has dopants doped into a base material, wherein the dopants are selected from a group consisting of boron containing materials, titanium containing materials, tantalum containing materials, tungsten containing materials, alloys thereof, or combinations thereof, and reacting the sputtered material with the gas mixture to deposit a transparent conductive layer on a substrate disposed in the processing chamber.
    Type: Application
    Filed: December 2, 2008
    Publication date: June 3, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hien-Minh Huu Le, David Tanner
  • Publication number: 20100122726
    Abstract: A method for forming a thin film photovoltaic device. The method provides a transparent substrate including a surface region. A first electrode layer overlies the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. At least the multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a bulk copper indium disulfide. The bulk copper indium disulfide material has a surface region characterized by a copper poor surface region having a copper to indium atomic ratio of less than about 0.95:1 and n-type impurity characteristics. The bulk copper indium disulfide material excluding the copper poor surface region forms an absorber region and the copper poor surface region forms at least a portion of a window region for the thin film photovoltaic device.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 20, 2010
    Applicant: STION CORPORATION
    Inventor: HOWARD W.H. LEE
  • Patent number: 7709727
    Abstract: The invention relates to a circuit arrangement for controlling/regulating photovoltaic systems (10b) which comprise a plurality of solar generators (14b) connected in series or/and connected in parallel. In order to prevent power loss of solar generators, which is based on the fact that not all solar generators are operated in the MPP thereof, each solar generator is associated with a variable energy bypass (68b) that is controlled/regulated in such a manner that each solar generator (14b) is operated continuously in its respective current specific MPP.
    Type: Grant
    Filed: May 19, 2003
    Date of Patent: May 4, 2010
    Inventors: Ruediger Roehrig, Josef Steger
  • Publication number: 20100096015
    Abstract: A compound film may be formed by formulating a mixture of elemental nanoparticles composed of the Ib, the IIIa, and, optionally, the VIa group of elements having a controlled overall composition. The nanoparticle mixture is combined with a suspension of nanoglobules of gallium to form a dispersion. The dispersion may be deposited onto a substrate to form a layer on the substrate. The layer may then be reacted in a suitable atmosphere to form the compound film. The compound film may be used as a light-absorbing layer in a photovoltaic device.
    Type: Application
    Filed: October 19, 2009
    Publication date: April 22, 2010
    Inventors: Matthew R. Robinson, Martin R. Roscheisen
  • Publication number: 20100096014
    Abstract: A conductive paste for solar cells, which makes it possible to form an electrode for a solar cell that is low in cost and has an equal degree of contact resistance and ohmic electrical contact, as compared to conventional silver electrode pastes, is obtained. It is a conductive paste for solar cells, comprising conductive particles, glass fits, an organic binder and a solvent, in which paste the conductive particles comprise (A) silver and (B) one or more selected from the group consisting of copper, nickel, aluminum, zinc and tin, and the weight proportion (A):(B) is 5:95 to 90:10.
    Type: Application
    Filed: December 25, 2006
    Publication date: April 22, 2010
    Inventors: Hideyo Iida, Toshiei Yamazaki, Kenichi Sakata
  • Patent number: 7663057
    Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
    Type: Grant
    Filed: February 19, 2004
    Date of Patent: February 16, 2010
    Assignee: Nanosolar, Inc.
    Inventors: Dong Yu, Jacqueline Fidanza, Martin R. Roscheisen, Brian M. Sager
  • Patent number: 7663056
    Abstract: A chalcopyrite type solar cell has a mica aggregate substrate formed by binding mica particulates with a resin. A multilayer body consisting of a first electrode, a light absorption layer and a second electrode is formed on the mica aggregate substrate with a smoothing layer and a binder layer interposed between the substrate and the body. The smoothing layer is preferably made of SiN or SiO2, and the binder layer is made of TiN or TaN.
    Type: Grant
    Filed: April 25, 2005
    Date of Patent: February 16, 2010
    Assignee: Honda Motor Co., Ltd.
    Inventors: Satoshi Yonezawa, Tadashi Hayashida