Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: A photovoltaic device and a method for production thereof. The photovoltaic device comprises an anode (32), a cathode (46) spaced apart from the anode, and at least one subcell disposed between the anode and the cathode. The subcell comprises a charge-transfer dyad (38) with a light absorbing electron donor moiety (40) and an electron acceptor moiety (42), which are covalently linked to each other in a non-flexible configuration and oriented such that each subcell is capable of performing primary photo-induced vectorial electron transfer between the donor and acceptor moieties in the direction from the anode to cathode. The structure of the donor-acceptor molecule is highly symmetric, which greatly increases the intramolecular electron transfer probability and, thereby, the efficiency of the device.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.

Abstract: The invention provides a solar cell and a method of fabricating the same. The solar cell, according to a preferred embodiment of the invention, includes a semiconductor structure combination and a multi-atomic-layer structure formed of at least one oxide. The semiconductor structure combination includes at least one p-n junction and has an illuminated surface. The multi-atomic-layer structure overlays the illuminated surface of the semiconductor structure combination. In particular, the multi-atomic-layer structure serves as a surface passivation layer, a transparent conductive layer, and further as an anti-reflective layer.

Abstract: An electrolyte composition containing an ionic liquid having dicyanoamide anions as anions. Examples of cations of the ionic liquid, may include, for example, cations having a quaternized nitrogen atom. This electrolyte composition may contain a halogen-based oxidized/reduced pair. This electrolyte composition is used as an electrolyte of a photoelectric conversion element.

Abstract: The present invention relates generally to the field of photovoltaics and more specifically to manufacturing thin-film solar cells using a thermal process. Specifically, a method is disclosed to manufacture a CIGS solar cell by an in-situ junction formation process.

Abstract: A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Abstract: A component involving a substrate, a layered structure arranged on the substrate, and a barrier layer arranged over the layered structure, wherein the barrier layer has the reaction product of an epoxy resin and a polymeric polyol.

Abstract: The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.

Abstract: A solar cell unit comprising a substrate and a plurality of photovoltaic cells is provided. The substrate has a first end and a second end. The plurality of photovoltaic cells, which are linearly arranged on the substrate, comprises a first photovoltaic cell and a second photovoltaic cell. Each photovoltaic cell in the plurality of photovoltaic cells comprises (i) a back-electrode circumferentially disposed on the substrate, (ii) a semiconductor junction layer circumferentially disposed on the back-electrode, and, (iii) a transparent conductive layer circumferentially disposed on the semiconductor junction. The transparent conductive layer of the first photovoltaic cell in the plurality of photovoltaic cells is in serial electrical communication with the back-electrode of the second photovoltaic cell in the plurality of photovoltaic cells.

Abstract: A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

Abstract: A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Abstract: In a photovoltaic cell having a photovoltaically active semiconductor material constituted by a plurality of metals or metal oxides, the photovoltaically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I) MexSAySBz??(I) with Me=Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag, SA, SB=B, C, Si, Ge, Sb, Se or Te, where SA and SB respectively come from different groups of the periodic table, x, y, z are independent of one another and can take values from 0.

Abstract: In one aspect, the invention provides photovoltaic cells that utilize a mesh electrode on at least one exposure side of the photovoltaic cell. Preferably, the mesh electrode is a metallic mesh. In one embodiment, the invention provides dye-sensitized solar cells (DSSC) having a wire mesh exposure side electrode and a photovoltaic material comprising a photosensitized interconnected nanoparticle layer. In one embodiment, the wire mesh electrode functions as the cathode of the DSSC. In another embodiment, the wire mesh electrode functions as the anode of the DSSC. In addition, embodiments are provided where wire mesh electrodes are used for the anode and the cathode of a DSSC.

Abstract: Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1?X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.

Abstract: The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

Abstract: A photoelectric cell that includes a first insulating base, having on its surface a first electrode layer, which has on its surface a metal oxide semiconductor film, which includes anatase titanium oxide particles, on which a photosensitizer is absorbed and a second insulating base having on its surface a second electrode layer and an electrolyte sealed between the metal oxide semiconductor film and the second electrode layer. The first electrode layer and the second electrode layer are arranged opposite from each other. At least one of the first and second insulating bases with an electrode layer is transparent.

Abstract: The present invention relates to the use of a nanocrystalline layer of Cu2O in the construction of photovoltaic cells to increase the ability of the photovoltaic cells to utilize UV radiations for photocurrent generation.

Abstract: The present invention relates to the use of a nanocrystalline layer of Cu2O in the construction of photovoltaic cells to increase the ability of the photovoltaic cells to utilize UV radiations for photocurrent generation.

Abstract: A thin-film solar cell and a method of producing a thin-film solar cell. The thin-film solar cell includes an absorber layer and at least one transparent window electrode. The window electrode is produced with a first metal-based thin-film, which receives an anti-reflection treatment, at least on the side of which the light is incident. Further, at least one first highly light-refracting oxide or nitride layer is provided between the absorbent layer and the first metallic layer. As a result, conductivity of the electrode window is improved and, at the same time, a thickness compared to conductivity of the window electrode is reduced.

Abstract: A thin-film solar cell including a transparent electrode layer, a semiconductor photovoltaic conversion layer, a rear transparent electrode layer and a rear reflective metal layer, said layers being formed in this order on a transparent substrate, wherein the rear transparent electrode has a two-layer structure of an ITO or ZnO:Ga layer and a ZnO:Al layer formed in this order on the semiconductor photovoltaic conversion layer.

Abstract: A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

Abstract: A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.

Abstract: A differential response light-receiving device comprising: a semiconductor electrode comprising an electrically conductive layer and a photosensitive layer containing a semiconductor sensitized by a dye; an ion-conductive electrolyte layer; and a counter electrode, the differential response light-receiving device making time-differential response to quantity of light to output a photoelectric current. A composite light-receiving device comprising the differential response light-receiving device and a stationary response light-receiving device, and an image sensor using the differential response light-receiving device or the composite light-receiving device are also provided.

Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

Abstract: A substrate for a solar cell is provided which comprises a support having a metal surface and a zinc oxide film formed on the metal surface and having a water content of 7.5×10−3 mol/cm3 or less, preferably 4.0×10−4 mol/cm3 or more. Thereby, the increase of series resistance and the generation of shunt are prevented and the efficiency such as Jsc and the chemical stability are improved, thus obtaining a solar cell with a zinc oxide film having optimal overall characteristics.

Abstract: A solar cell using a ferroelectric material(s) is provided with a ferroelectric layer at the front surface or the rear surface thereof, or at the front and the rear surfaces thereof. The ferroelectric layer is formed with a ferroelectric material such as BaTiO3, BST((Ba,Sr)TiO3), PZT((Pb,Zr)TiO3) and SBT(SrBi2Ta2O7).

Abstract: Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Abstract: Systems and methods are described for compositions, apparatus and/or electronic devices. A composition, includes a composition layer defining a first surface and a second surface, the composition layer including a collection layer that is located closer to the first surface than to the second surface. An apparatus, includes a semiconductor absorber layer defining a first surface and a second surface; and an electrode layer coupled to the first surface of the semiconductor absorber layer, wherein the semiconductor absorber layer includes a collection layer that is located closer to the first surface than to the second surface.

Abstract: The present invention relates to a solar powered cathodic protection system using a photocatalyst which functions as a non-sacrificial photoanode under sunlight, wherein said non-sacrificial photoanode consisting of the photocatalyst such as TiO2 (or ZnO) and an electrolyte, is galvanically connected to a metal structure to be protected and continuously provides electrons to the metal structure, whereby the metal structure is protected from the corrosion. The solar powered cathodic protection system using a non-sacrificial photoanode according to present invention is advantageous in that 1) an external power supply is not necessary, 2) it is easy to maintain the system because the non-sacrificial photoanode according to the present invention can be installed outdoors, and 3) the photocatalyst used as the non-sacrificial photoanode is inexpensive and semipermanent.

Abstract: A thin film, photovoltaic, solar energy conversion device comprising: a thin-film, photovoltaic layer; a transparent electrical conducting layer in contact with said photovoltaic layer; a back electrical conducting layer in contact with said photovoltaic layer; fabricated on a suitable substrate; said photovoltaic layer being of a material selected from the class consisting of: monoclinic zinc diphosphide (also referred to as beta zinc diphosphide and indicated by &bgr;-ZnP2); copper diphosphide (CuP2); magnesium tetraphosphide (MgP4); gamma-iron tetraphosphide (&ggr;-FeP4) and mixed crystals formed from these four materials. A thin film fabrication process is presented that produces high efficiency, low-cost photovoltaic layers of the above-indicated class.

Abstract: A photoelectric cell that includes a first insulating base, having on its surface a first electrode layer, which has on its surface a metal oxide semiconductor film, which includes anatase titanium oxide particles, on which a photosensitizer is adsorbed and a second insulating base having on its surface a second electrode layer and an electrolyte sealed between the metal oxide semiconductor film and the second electrode layer. The first electrode layer and the second electrode layer are arranged opposite from each other. At least one of the first and second insulating bases with an electrode layer is transparent.

Abstract: In a photovoltaic cell having a photovoltaically active semiconductor material constituted by a plurality of metals or metal oxides, the photovoltaically active material is selected from a

Abstract: A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy the relationship Eg1<Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and the electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy the relationship 0≦(&khgr;1−&khgr;2)<0.5, and the average layer thickness of the layer A is 1 nm or more and 20 nm or less.

Abstract: A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420° C.-550° C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S)2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

Abstract: Provided are a zinc oxide thin film having an X-ray diffraction peak of the plane of zinc oxide crystal, a photoelectric conversion element having the zinc oxide thin film, and production processes thereof. By these, the texture level of the zinc oxide thin film is increased and the photoelectric conversion element is provided with excellent short circuit current density (Jsc).

Abstract: Disclosed is a method of producing a photo device containing a layer of nanometer sized particles and a conducting polymer in solid sate, wherein the layer is made by mixing the nanometer sized particles in colloid with precursor polyparaphenylenevinylene or a derivative thereof and wherein the nanometer sized particle is selected from the group consisting of TiO2, ZnO, ZrO2 and SnO2 and the layer is heated to a temperature during a period of time.

Abstract: A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Abstract: The invention relates to a method for producing a thin-film solar cell, comprising an absorber layer and at least one transparent window electrode. According to the method, the window electrode is produced with a first metal-based thin film, which receives an anti-reflection treatment, at least on the side on which the light is incident. According to the invention, the solar cell also comprises at least one first highly light-refracting oxide or nitride layer between the absorber layer and the first metallic layer. This leads to a considerable improvement in the conductivity of the window electrode and at the same time, reduces the thickness compared to conductivity of the window electrode and at the same time, reduces the thickness compared to convention window electrodes which usually consists of zinc oxide made conductive by doping.

Abstract: The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is as flexible as possible, efficiency is high, and utilizing materials that are as environmentally friendly as possible. A diode structure comprising a p-conducting layer, which consists of a chalcopyrite compound, and a n-conducting layer, which is adjacent to the p-conducting layer and consists of a compound that contains titanium and oxygen, is provided.

Abstract: A dye-sensitized solar cell comprising a porous semiconductor layer in which a dye is adsorbed and an electrolyte which are sandwiched between a transparent conductive film formed on a surface of a transparent substrate and a conductive substrate, wherein the electrolyte is retained in a crosslinked polymer compound.

Abstract: In a photovoltaic device module comprising a plurality of photovoltaic devices connected electrically through a metal member, an insulating member is so provided as to avoid contact between an edge portion of the photovoltaic device and the metal member. This can provide a photovoltaic device module which is inexpensive, easy to operate and highly reliable.

Abstract: The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.