Abstract: The present invention provides a low carbon steel sheet and a low carbon steel slab on which formation of surface defects can be surely prevented by preventing aggregation of inclusions in the molten steel and finely dispersing inclusions in the steel sheet or slab, and a process for producing the steel sheet and slab. The present invention provides a process comprising the steps of decarburizing a molten steel so as to produce a carbon concentration of up to 0.01% by mass, pre-deoxidizing the molten steel by adding Al thereto so as to produce a dissolved oxygen concentration from 0.01 to 0.04% by mass, adding thereto Ti and at least La and/or Ce, and casting the molten steel, and a steel sheet and a steel slab obtained by the process.

Abstract: The very thin, high carbon wire is 0.05 to 0.50 mm in diameter and comprises, in mass %, 0.90-1.20% of C, 0.05-1.2% of Si, 0.2-1.0% of Mn, and 0.0050% or less of N, with the balance being iron and impurities. In a differential scanning thermal analysis curve A of the steel wire, the steel wire has an exothermic peak X in the temperature range of 60° to 130° C., and a maximum height h of the exothermic peak X relative to a reference line Y joining the point of 60° C. and the point of 130° C. in the differential scanning thermal analysis curve is set at 5 ?W/mg or more. The very thin, high carbon steel wire is free of delamination in high-speed stranding and superior in both strength and ductility.

Abstract: A welding structural steel product exhibiting a superior heat affected zone toughness, comprising, in terms of percent by weight, 0.03 to 0.17% C, 0.01 to 0.5% Si, 0.4 to 2.0% Mn, 0.005 to 0.2% Ti, 0.0005 to 0.1% Al, 0.008 to 0.030% N, 0.0003 to 0.01% 0.00 1 to 0.2% W, at most 0.03% P, at most 0.03% S, at most 0.005% 0, and balance Fe and incidental impurities while satisfying conditions of 1.2?Ti/N?2.5, 10?N/B?40, 2.5?Al/N?7, and 6.5?(Ti+2Al+4B)/N?14, and having a microstructure essentially consisting of a complex structure of ferrite and pearlite having a grain size of 20 ?m or less. The method includes the steps of preparing a slab of the above-described composition, heating the slab to 1,100° C. to 1,250° C. for 60-180 minutes, hot rolling the heated slab in an austenite recrystallization range at a 40% or more rolling reduction followed by controlled cooling.

Abstract: A ferritic steel sheet wherein a mean value of X-ray random intensity ratios of a group of {100}<011> to {223}<110> orientations is 3.0 or more and a mean value of X-ray random intensity ratios of three crystal orientations of {554}<225>, {111}<112>, and {111}<110> is 3.5 or less and further at least one of the r values in a rolling direction and a direction at a right angle of that is 0.7 or less.

Abstract: A primary purpose is to provide an inexpensive high-toughness wear-resistant steel having satisfactory toughness where its hardness is HRC 55 or more. This steel contains at least 0.21 to 0.80 wt % C; 0.3 to 2.0 wt % Al; and 0.5 to 4.0 wt % Ni as essential components and further contains alloy elements such as Si, Mn, Cr, Mo, W, V, Ti, Cu and B; unavoidable impurities such as P, S, N and O; and the remainder which substantially consists of a tempered martensitic steel of Fe.

Abstract: Disclosed are a high strength hot rolled steel plate, preventing a deterioration in bore expandability and ductility involved in an increase in strength to not less than 690 N/mm2 and, despite high strength, providing a high level of bore expandability and a high level of ductility, and a producing process thereof. The steel plate according to the first aspect is a steel plate, comprising a steel comprising, by mass, C: 0.01-0.15%; Si: 0.30-2.00%; Mn: 0.50-3.00%; P ≦0.03%; S ≦0.005%; Ti: 0.01-0.50% and/or Ni: 0.01-0.05%; and the balance consisting of Fe and unavoidable impurities, not less than 80% of all grains being accounted for by grains having a ratio (ds/dl) of minor axis (ds) to major axis (dl) of not less than 0.1, the steel plate having a steel structure comprising not less than 80% of ferrite and the balance consisting of bainite, the steel plate having a strength of not less than 690 N/mm2.

Abstract: A high-strength steel pipe excellent in weldability on site and a method for producing the steel pipe by improving the reliability of the low temperature toughness of a steel are provided. For example, the steel pipe includes elements to enhance hardenability for furthering high-strengthening and also improving toughness at a weld heat affected zone subjected to double or more layer welding. In the method, the steel is made to consist of a structure composed of bainite and/or martensite by containing prescribed amounts of C, Si, Mn, P, S, Ni, Mo, Nb, Ti, Al and N, and, as occasion demands, one or more of B, V, Cu, Cr, Ca, REM, and Mg, and regulating C, Si, Mn, Cr, Ni, Cu, V and Mo. Such elements enhancing hardenability, by a specific relational expression. The diameter of prior austenite grains may be regulated in a prescribed range.

Abstract: The addition of small amounts of CeO2 and Cr to intermetallic compositions of NiAl and FeAl improves ductility, thermal stability, thermal shock resistance, and resistance to oxidation, sulphidization and carburization.

Abstract: Spindle-shaped magnetic metal particles containing iron as a main component of the present invention, have an average major axis diameter (L) of 0.05 to 0.15 &mgr;m; a coercive force of 111.4 to 143.2 kA/m; a Co content of from 0.5 to less than 5 atm % based on whole Fe; a crystallite size of from 150 to less than 170 Å; a ratio of Al to Co from 1.0:1 to less than 2.0:1; a specific surface area (S) represented by the formula: S≦−160×L+65; an oxidation stability (&Dgr;&sgr;s) of saturation magnetization of not more than 5.0%; and an ignition temperature of not less than 140° C. The spindle-shaped magnetic metal particles containing iron as a main component, exhibit an adequate coercive force, and are excellent in dispersibility, oxidation stability and coercive force distribution despite fine particles, especially notwithstanding the particles have an average major axis diameter as small as 0.05 to 0.15 &mgr;m.

Abstract: A compound structure steel sheet excellent in burring workability made of a steel containing, by mass, 0.01 to 0.3% of C, 0.01 to 2% of Si, 0.05 to 3% of Mn, 0.1% or less of P, 0.01% or less of S, and 0.005 to 1% or Al, and having the microstructure being a compound structure having ferrite as the main phase and martensite or retained austenite mainly as the second phase, the quotient of the volume percentage of the second phase divided by the average grain size of the second phase being 3 or more and 12 or less, and the quotient of the average hardness of the second phase divided by the average hardness of the ferrite being 1.5 or more and 7 or less; or a compound structure steel sheet excellent in burring workability made of a steel containing, by mass, 0.01 to 0.3% of C, 0.01 to 2% of Si, 0.05 to 3% of Mn, 0.1% or less of P, 0.01% or less of S, and 0.

Abstract: A free-cutting tool steel is provided containing Fe and C in an amount of 0.1 to 2.5 wt %, Ti and or Zr where WTi+0.52WZr constitutes 0.03 to 3.5 wt %, and WTi represents Ti content and WZr represents Zr content, at least any one of S, Se and Te where WS+0.4WSe+0.25WTe constitutes 0.01 to 1.0 wt %, and (WTi+0.52WZr)/(WS+0.4WSe+0.25WTe) constitutes 1 to 4, and WS represents S content, WSe represents Se content and WTe represents Te content; and dispersed therein a texture thereof from 0.1 to 10% in terms of area ratio in a section of a machinability improving compound phase of a metallic element component of Ti and/or Zr as major components, and a binding component for the metallic element component containing C and any one of S, Se and Te.

Abstract: A rare earth-iron-boron magnetic powder comprising a rare earth element, iron and boron, which has a coercive force of 80 to 400 kA/m, a saturation magnetization of 10 to 25 &mgr;W/g, an average particle size of 5 to 200 nm, and a particulate or ellipsoidal particle shape, and a magnetic recording medium having a magnetic layer which contains this magnetic powder and a binder, in which magnetic recording medium it is possible to practically use a very thin magnetic layer of 0.3 &mgr;m or less.

Abstract: A steel sheet having a composition comprising C: 0.05-0.20 mass %, Si: 0.3-1.8 mass %, Mn: 1.0-3.0 mass %, Fe of the balance and inevitable impurities is subjected to a primary step of primary heat treatment and subsequent rapid cooling to Ms point or lower, a secondary step of secondary heat treatment and subsequent rapid cooling, and a tertiary step of galvanizing treatment and rapid cooling, so as to turn the structure of the steel sheet into a composite structure of 20% or more by volume of tempered martensite, 2% or more by volume of retained austenite, ferrite and a low-temperature transformation phase. A galvanized layer is deposited on the surface of the steel sheet. It is preferred to cool the steel sheet to 300° C. at a cooling rate of 5 ° C./sec. or more after the galvanizing treatment. After the galvanizing treatment, alloying treatment may be conducted.

Abstract: A steel sheet for disk brake with improved anti-warp property has a chemical composition comprising, in mass percent, 0.05-0.15% of C, not more than 1.0% of Si, not more than 2.0% of Mn, not more than 1.0% of Ni, 9.0-15.0% of Cr, 0.5-4.0% of Cu, 0.10-2.0% of Mo, not more than 0.10% of N, 0.05-1.

Abstract: A high tensile strength steel product for high heat input welding having excellent toughness in the heat-affected zone and having a tensile strength of at least 490 MPa contains, in terms of percent by weight, from about 0.05% to about 0.18% of C, 0.6% or less of Si, from about 0.80% to about 1.80% of Mn, 0.005% or less of Al, 0.030% or less of P, 0.004% or less of S, 0.005% or less of Nb, from about 0.04% to about 0.15% of V, from about 0.0050% to about 0.00150% of N, and from about 0.010% to about 0.050% of Ti, the ratio of the Ti content to the Al content, Ti/Al, satisfying 5.0 or more, and further contains at least one of from about 0.0010% to about 0.0100% of Ca and from about 0.0010% to about 0.0100% of REM, and the balance being Fe and incidental impurities.

Abstract: Spindle-shaped metal particles and a process for producing magnetic spindle-shaped metal particle containing iron as a main component, which contains cobalt of 8 to 45 atm % calculated as Co, aluminum of 5 to 20 atm %, calculated as Al, and a rare earth element of 1 to 15 atm %, calculated as rare earth element, wherein the particles have an average major axial diameter of 0.05 to 0.15 &mgr;m, an average minor axial diameter of 0.010 to 0.022 &mgr;m, an aspect ratio of 4:1 to 8:1, a particle size distribution of not more than 0.20, and an X-ray crystallite size D110 of 12.0 to 17.0 nm. The spindle-shaped metal particles have a high coercive force, an excellent particle coercive force distribution, a large saturation magnetization and an excellent oxidation stability, and are excellent in a squareness (Br/Bm) of the sheet due to a good dispersibility in a binder resin.

Abstract: A steel composition particularly useful for components of solid oxide fuel cells, for example a connector plate for collecting electrical current from a solid oxide fuel cell, consisting of, in weight percent, 18-28.5 Cr, 0.001-0.20 C, <0.1 Si, 0.005-0.10 Mn, <1.0 Ni, <0.25 N, <0.05 S, <0.08 P, <0.06 Al, <0.25 Additional Defined Metals, and 0.005-0.50 REM, wit the residue iron, excluding incidental impurities, where Additional Defined Metals is the sum of titanium, niobium, vanadium, molybdenum and copper, and REM is one or more of the rare earth metal elements in the group of the lanthanide elements 57 to 71, scandium and yttrium.

Abstract: A hot rolled high strength steel sheet having a satisfactory strength-elongation balance and an stretch frangibility and with excellent formability comprising a steel, which contains: C :0.05 ˜ 0.15% Si :0.5 ˜ 2.0% Mn :0.5 ˜ 2.0% P :0.05% or less S :0.010% or less Al :0.005 ˜ less than 0.10%, and the balance of Fe and inevitable impurities, and in which the metal structure mainly comprises three phases of ferrite, retained austenite and bainite, the amount of the ferrite [V(F)] is 60˜95 area %, the amount of the retained austenite [V(&ggr;)] is 3˜15 vol %, the amount of the bainite [V(B)] in the area ratio is 1.5 times or more of the amount of the retained austenite [V(&ggr;)], and the average hardness of the bainite is 240-400 Hv.

Abstract: An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or S.sub.i O.sub.2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface above the strained layers, and removing the first substrate. The invention overcomes the problem of forming strained Si and SiGe layers on insulating substrates.

Abstract: A composition of matter comprising a bulk material of uniform composition having first and second spaced apart surface regions and a dopant in the bulk material of progressively increasing concentration in a direction from the first to said second surface regions providing an interface intermediate the first and second surface regions wherein the portion of the bulk material on one side of the interface is electrically conductive and the portion of the bulk material on the other side of the interface is relatively electrically insulative. The bulk material is one of Ge, Si, group II-VI compounds and group III-V compounds and preferably GaAs or GaP. The dopant is a shallow donor for the bulk material involved and for GaAs and GaP is Se, Te or S. The ratio of the resistivity of the portion of the bulk material on one side of the interface to the portion of the bulk material on the other side of the interface is at least about 1:10.sup.7.

Abstract: An apparatus for and a method of determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers are provided. The apparatus provides an epitaxial single crystal silicon wafer comprising an isotopically enriched doped substrate. The method involves a process of applying Second Ion Mass Spectrometry (SIMS) to the isotopically enriched doped wafer for determining its epitaxial layer thickness and transition width.

Abstract: Fe--Ni alloys for electron gun parts consisting of, all by weight, 30-55% Ni, 0.0010-0.200% S, up to 0.8% Mn, from not less than 0.005 to less than 0.5% in total of one or more elements selected from the group consisting of Ti, Mg, Ce and Ca, and the balance substantially Fe and unavoidable impurities, and electron gun parts, typically electron gun electrodes, made of the alloys by punching are provided. Controlling the grain size number to No. 7.0 or above is also effective. The Fe--Ni alloys of this invention for electron gun parts are remarkably improved in press punchability and can solve burring problems through the easy formation of sulfide inclusions of Ti, Mg, Ce, and Ca.

Abstract: A graded layer composition of Zn(Se,Te) in which the Te fraction varies across the layer in a super-parabolic grading profile. Such a graded layer has lower contact resistance than graded layers in which the Te fraction varies in a linear or parabolic grading profile. Such low contact resistance makes such graded layers useful in forming ohmic contacts for II-VI semiconductor lasers and light emitting diodes.

Abstract: A heavy-wall steel having a flange thickness of about 40 mm or more and possessing excellent strength, toughness, weldability, and seismic resistance capable of being used for structure members such as columns and beams of high-rise buildings. The heavy-wall steel has a tensile strength of about 490-690 MPa, a yield ratio of about 80% or less, and Charpy absorbed energy at 0.degree. C. of about 27 J or more at the center in terms of thickness of the flange portion in each of the rolling direction, the direction perpendicular to the rolling direction, and the plate-thickness direction.

Abstract: A semiconductor heterojunction material includes a heterojunction configured by successively overlaying first, middle and third layers of semiconductor, some or all of the constituent elements of the first and third layers being different and the middle layer containing all elements contained in the first and third layers.

Abstract: The present invention aims to provide a metal mold for glass, which needs not apply any swab in molding of glass, enabling no-swabbing glass forming. The alloy for the mold comprises by weight Cu: 10 to 80%, Al: 4 to 11%, Cr: 3 to 16%, Ni: 2 to 36%, and at least one rare earth element: 0.02 to 2.08 with the balance consisting of Fe and further comprises at least one member selected from the group consisting of Ti: Al %.times.0.5 to 2, V: Al %.times.0.2 to 1, Zr: Al %.times.0.1 to 0.3, and Nb: Al %.times.0.1 to 0.3. The alloy is gradually cooled from the solidification initiation temperature to 500.degree. C. at a cooling rate of 10.degree. C./min. The surface of the mold is coated with an Al-containing coating or roughened to an average roughness of 0.3 to 5 .mu.m. A solid lubricating film is provided in a fitting portion of the mold, or alternatively a self-lubricating solid is embedded in the fitting portion of the mold.

Abstract: A high strength steel sheet adapted for press forming and method producing the same. The steel sheet containing by weight C: 0.01-0.1%, Si: 0.1-1.2%, Mn: not more than 3.0%, Ti:a value of (Ti%-1.5S%-3.43N%)/C% being 4-12, B: 0.0005-0.005%, Al: not more than 0.1%, P: not more than 0.1%, S: not more than 0.02%, N: not more than 0.05%. The method for producing the steel sheet wherein a steel slab containing the above mentioned component composition is heated and hot rolled in a temperature range of 1100-1280.degree. C. to provide a hot rolled sheet. The hot rolled sheet may be is subjected to cold rolling and annealing to provide a cold rolled sheet.

Abstract: A cast slab comprising fine particles of oxides and MnS, said oxide comprising an Mn silicate, with Mn oxide occupying 50 to 80% by weight of the sum of Mn oxide and Si oxide, unavoidably included oxides, and an optionally added oxide of at least one member selected from Zr, Ti, Ce, Hf, Y, and Al, said oxide having a size of 0.1 to 10 .mu.m being dispersed in an amount of 30 to 2000 pieces per mm.sup.2 of section of said cast slab. The dispersion of many oxide particles, which are likely to serve as nucli for the precipitation of MnS, in said cast slab can provide a plate steel having good toughness in a HAZ and a steel sheet product having excellent deep drawability.

Abstract: A semiconductor device, which can easily form hyper abrupt junction type junction having a desired depletion layer width or transition region width, is disclosed. A silicon oxide film is formed on the mirror polished side surface of a P-type semiconductor substrate. Then, a P-type diffusion layer is formed by means of heat treatment. In this process, impurity concentration distribution is formed in such a way that the impurity concentration distribution can abruptly decrease from the mirror polished side surface of the substrate. Following this, the oxide film is removed by etching, and hyper abrupt type PN junction is obtained by sticking the mirror polished side surface of a high impurity concentration N-type semiconductor substrate and the high impurity concentration diffusion side of the above P-type semiconductor substrate to each other in the same surface direction as that of the above P-type semiconductor substrate.

Abstract: To provide graphitic cast steel given with improved machining and mechanical properties, a large number of fine graphite nodules can be crystallized in the cast steel, and the occurrence of chain-like formation of graphite crystals can be avoided by limiting the Bi content in the cast steel to the range between 0.005% and 0.0150%. The composition essentially consists of 0.45 to 1.5 wt % carbon (C), 1.0 to 5.5 wt % silicon (Si), 0.008 to 0.25 wt % rare earth elements (REM), optionally, 0.002 to 0.020 wt % calcium (Ca, 0.005 to 0.0150 wt % bismuth (Bi), 0.005 to 0.080 wt % aluminum (Al), and balance iron (Fe) and inevitable impurities. The cast steel can achieve favorable machining and mechanical property even in its as cast condition.

Abstract: An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer layer comprises (A) a high-resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.

Abstract: A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane.

Abstract: Iron-aluminum alloys having selectable room-temperature ductilities of greater than 20%, high resistance to oxidation and sulfidation, resistant pitting and corrosion in aqueous solutions, and possessing relatively high yield and ultimate tensile strengths are described. These alloys comprise 8 to 9.5% aluminum, up to 7% chromium, up to 4% molybdenum, up to 0.05% carbon, up to 0.5% of a carbide former such as zirconium, up to 0.1 yttrium, and the balance iron. These alloys in wrought form are annealed at a selected temperature in the range of 700.degree. C. to about 1100.degree. C. for providing the alloys with selected room-temperature ductilities in the range of 20 to about 29%.

Abstract: There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle .theta. of 5 to 40 degrees, as measured from the [011] direction toward the [011] direction, and a tilt angle .phi. of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.

Abstract: A galvanized steel sheet is provided which has a tensile strength of not less than 80 kgf/mm.sup.2 and a yield ratio of not more than 60%, and which is applicable to members of an automobile body, particularly those requiring strength.By appropriately controlling the amounts of components, such as C, Mn, Nb, Ti and B, the structure of the steel sheet is formed into a dual-phase structure having a second phase strucutre. The steel sheet is recrystallization-annealed, galvanized while it is maintained at a temperature range near 500.degree. C., and then is cooled. By controlling the rate of cooling the steel sheet, the second phase structure generated is prevented from hardening more than necessary. A galvanized high-strength steel sheet is obtained which has a low yield ratio and excellent stretch-flanging properties.

Abstract: `Unintentionally` doped P type GaAs is grown on silicon by a metal organic chemical vapor deposition process in which the molecular ratio of arsenic to gallium in the growth ambient is reduced to a value that is sufficiently low to cause the creation of donor (As) site vacancies in the grown GaAs layer, which become occupied by acceptor (carbon) atoms in the metal organic compound, thereby resulting in the formation of a buffer GaAs layer having a P type majority carrier characteristic. Preferably, the silicon substrate has its growth surface inclined from the [100] plane toward the [011] direction is initially subjected to an MOCVD process (e.g. trimethyl gallium, arsine chemical vapor deposition) at a reduced temperature (e.g. 425.degree. C.) and at atmospheric pressure, to form a thin (400 Angstroms) nucleation layer. During this growth step the Group V/Group III mole ratio (of arsenic to gallium) is maintained at an intermediate value. The temperature is then ramped to 630.degree. C.

Abstract: A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.

Abstract: Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.

Abstract: A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75.According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.

Abstract: A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a substrate material having a semiconductor coating having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.

Abstract: A high strength hot rolled steel sheet for wheel rims contains, by weight, from 0.05 to 0.15% of C, from 0.05 to 0.5% of Si, from 1.0 to 1.6% of Mn, from 0.01 to 0.05% of Al, from 0.005 to 0.025% of Ti and from 15 to 60 ppm of N, with the content of P limited to 0.030% or below and the content of S limited to 0.010% or below, the balance being iron and unavoidable impurities. The steel sheet optionally contains, by weight, from 0.01 to 0.06% of Nb or at least one selected from the group consisting of from 0.0005 to 0.01% of Ca and from 0.005 to 0.1% of rare earth metals.

Abstract: A permanent magnetic alloy essentially consists of 10 to 40% by weight of R, 0.1 to 0.8% by weight of boron, 50 to 300 ppm by weight of oxygen and the balance of iron, where R is at least one component selected from the group consisting of yttrium and the rate-earth elements.An alloy having this composition has a high coercive force .sub.I H.sub.C and a high residual magnetic flux density and therefore has a high maximum energy product.

Abstract: A method of producing n-type III-V compound semiconductor comprises growing a plurality of monolayers of III-V compound semiconductor molecules on a III-V compound substrate; growing a single layer of group VI element on the III-V monolayers so as to occupy the lattice points for group V element by means of Atomic Layer Epitaxy process; decreasing the number of group VI element by exposing the single layer to the gas of group V element; and growing a plurality of monolayers of III-V compound semiconductor molecules on the group VI element-doped layer by means of the Atomic Layer Epitaxy process.

Abstract: A high-strength steel having improved resistance to hydrogen embrittlement characterized as being essentially free of manganese and having a stable rare earth oxymetalloid dispersion consisting of, e.g., lanthanum oxysulfide and lanthanum phosphate. The steel prepared using rapid solidification processing coupled with late addition of the rare earth.

Abstract: A process for manufacturing gallium arsenide microwave circuits makes use of a nonphotosensitive acid resist as an adhesive for holding the "front side" of a gallium arsenide wafer onto a substrate while operations such as etching "via holes" into the wafer are being performed on the "back side" of the wafer. The process comprises front side processing, spinning the nonphotosensitive acid resist onto the frontside of the GaAs wafer, baking the protective acid resist coating onto the wafer, spinning the acid resist onto a substrate, joining the wafer to the substrate, thinning the wafer, and performing backside processing.

Abstract: A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition In.sub.y Ga.sub.1-y As on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.

Abstract: This absorbant is of the type formed by superlattice constituted by a stack of films of two different semiconductor materials having gaps of different heights. Thus, a potential well is produced in each film corresponding to the semiconductor with the smallest gap and a potential barrier in each film corresponding to the semiconductor with the largest gap. This saturatable absorbant is characterized in that the films corresponding to the semiconductor with the smallest gap have a thickness, which can assume two values, one small and the other large.Application in optics to the production of mode locking lasers and all optical logic gates.

Abstract: More than two impurities are doped in a host crystal of compound semiconductors. One of the impurities is an anisoelectronic impurity. One or more than one impurities are isoelectronic impurities. The anisoelectronic impurity determines the electronic property and the carrier density of the semiconductor. Isoelectronic impurity does not change the electronic property. But isoelectronic impurity has an effect of impurity hardening.The impurity atom forms a covalent bond with a host atom. The bond length between an impurity and a host atom differs from the standard bond between host atoms. Although the real bond lengths between an impurity atom and a host atom cannot be measured, the Inventors think the difference of bond lengths generate dislocation or other lattice defects of crystal.

Abstract: A permanent magnetic alloy essentially consists of 10 to 40% by weight of R, 0.1 to 8% by weight of boron, 50 to 300 ppm by weight of oxygen and the balance of iron, where R is at least one component selected from the group consisting of yttrium and the rare-earth elements.An alloy having this composition has a high coercive force .sub.I H.sub.C and a high residual magnetic flux density and therefore has a high maximum energy product.

Abstract: In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.