Abstract: A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane.

Abstract: The invention provides a welding material for welding iron containing low CTE alloys. The filler metal contains 25-55% nickel, 0-30% cobalt, 0.05-0.5% carbon, 0.25-5% niobium and balance iron with incidental impurities. The welding material also is operable with fluxes for submerged arc welding. In addition, the welding material may be configured to function as a flux coated or flux-cored electrode.

Abstract: A Fe-Ni based alloy consists essentially of Ni of 25% by weight to 55% by weight, C of 0.001% by weight to 0.1% by weight, at least one element selected from Group IVb elements and Group Vb elements, e.g., Nb, or Ta of 0.01% by weight to 6% weight, and the balance being Fe and unavoidable impurities. The Fe-Ni based alloy contains dispersed particles inclusive of a carbide in the substructure. The carbide is a carbide of the Group IVb element or the Group Vb element. Since the dispersed particle inclusive of the carbide are finely and uniformly present in the substructure, mechanical strength, heat resistance and, a performance of punching work are improved. Additionally, a quantity of gas release in a vacuum can be reduced.

Abstract: A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. Crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.

Abstract: A high-strength lead frame material consists, by weight, of 0.5 to 22% Co, 22 to 32.5% Ni, not more than 1.0% Mn, not more than 0.5% Si, at least one kind of 0.1 to 3.0% in total selected from the group consisting of Nb, Ti, Zr, Mo, V, W and Be, and the balance Fe and incidental impurities; the total content of Ni and Co being selected so that the content of Ni is in the range of 27 to 32.5% when the content of Co is less than 12% and so that 66%.ltoreq.2Ni+Co.ltoreq.74% is met when the content of Co is not less than 12%; the lead frame material having a duplex-phase structure composed of a reverse-transformed austenite phase (which can involve a residual austenite phase) and a martensite phase; and the austenite phase being not less than 50%.

Abstract: In an Fe-base alloy, Ni is contained by 28 to 34% by weight and Co by 2 to 7% by weight with an average grain size of 30 .mu.m or less. 60 to 95% of crystal grains are oriented in a range of .+-.5 to 45 degrees deviated from the ideal orientation of {100} [001]. Resultant low thermal expansion of the alloy assures high doming characteristics of a shadow mask made thereof.

Abstract: An Fe-Ni alloy sheet excellent in hot workability, adhesivity to a plating layer and solderability, which consists essentially of:______________________________________ nickel (Ni): from over 38 to 52 wt. %, silicon (Si): from 0.01 to 0.15 wt. %, calcium (Ca): from 0.0002 to 0.0020 wt. %, magnesium (Mg): from 0.0003 to 0.0020 wt. %, where, Ca + 1/2Mg: from 0.0005 to 0.0025 wt. %, ______________________________________and the balance being iron and incidental impurities,where, the contents of carbon (C), nitrogen (N), sulfur (S), oxygen (O), phosphorus (P) and aluminum (Al) as the incidental impurities being respectively:up to 0.0050 wt. % for carbon,up to 0.0020 wt. % for nitrogen,up to 0.0020 wt. % for sulfur,up to 0.0040 wt. % for oxygen,up to 0.0040 wt. % for phosphorus, andunder 0.010 wt.% for aluminum,where, 1/10 C+1/10 N+S+1/5 O +1/2 P.ltoreq.0.0045 wt.

Abstract: An Fe-Ni alloy sheet for a shadow mask excellent in etching pierceability, preventing sticking during annealing, and inhibiting production of gases, which consists essentially of:______________________________________ nickel (Ni) from 34 to 38 wt. %, silicon (Si) from 0.01 to 0.09 wt. %, aluminum (Al) from 0.002 to 0.020 wt. %, calcium (Ca) from 0.0002 to 0.0020 wt. %, magnesium (Mg) from 0.0003 to 0.0020 wt. %, where, Ca + 1/2 Mg from 0.0005 to 0.0025 wt. %, ______________________________________andthe balance being iron and incidental impurities,where, the contents of carbon (C), nitrogen (N), sulfur (S), oxygen (O) and phosphorus (P) as the incidental impurities being respectively:up to 0.0050 wt.% for carbon,up to 0.0020 wt.% for nitrogen,up to 0.0020 wt.% for sulfur,up to 0.0040 wt.% for oxygen, andup to 0.0040 wt.% for phosphorus,where, 1/10 C+1/10 N+S+1/5 O+1/2P:up to 0.0045 wt.%, andCa+1/2 Mg.gtoreq.

Abstract: The fine steel wire according to the present invention has a high strength and high toughness, which is used as a rubber reinforcing material for a belt cord or tire cord, or as missile wires. Such a fine steel wire can be obtained by drawing a wire rod for a fine steel wire properly adjusted in its composition and structure, while applying working strain such that the total reduction of area in the final wire drawing step becomes 95% or more.

Abstract: A high-fineness shadow mask material comprising 33-40% by weight of Ni, 0.0001-0.0015% by weight of one or more of boron, magnesium and titanium, and the remainder consisting essentially of Fe, wherein the contents of sulfur and aluminum are confined to not more than 0.0020% and not more than 0.020% by weight, respectively, and a process for producing the material. The shadow mask material according to this invention is excellent in hot working property and in etching properties.

Abstract: A high-strength, damage-resistant rail characterized by essentially consists of 0.60 to 0.85 wt. % of C, 0.1 to 1.0 wt. % of Si, 0.5 to 1.5 wt. % of Mn, not more than 0.035 wt. % of P, not more than 0.040 wt. % of S, and not more than 0.05 wt. % of Al, a balance being Fe and indispensable impurity. The rail comprises corner and head side portions having a Brinell hardness H.sub.B of 341 to 405 and a head top portion having a hardness which is not more than 0.9 of the Brinell hardness of the corner and head side portions.

Abstract: A method for manufacturing an Fe-Ni alloy cold-rolled sheet excellent in cleanliness and etching pierceability, comprising: preparing an Fe-Ni molten alloy, containing 30 to 45 wt. % nickel, and subjected to dephosphorization and decarburization; adding aluminum and flux to the Fe-Ni molten alloy in a ladle made of an MgO-CaO refractory containing 20 to 45 wt. %; strongly stirring the Fe-Ni molten alloy which contains the added aluminum and flux in the ladle to produce a CaO-Al.sub.2 O.sub.3 -MgO slag so as to react the Fe-Ni molten alloy with the CaO-Al.sub.2 O.sub.3 -MgO slag to deoxidize the Fe-Ni molten alloy while controlling a value of activity of SiO.sub.2 from 0.001 to 0.005 and a value of activity of Al.sub.2 O.sub.3 from 0.1 to 0.3 in the CaO-Al.sub.2 O.sub.3 -MgO slag, and the CaO-Al.sub.2 O.sub.3 -MgO slag having the following chemical composition: CaO and Al.sub.2 O.sub.3 : at least 57 wt. %, wherein the ratio of CaO/(CaO+Al.sub.2 O.sub.3) being at least 0.45, MgO: up to 25 wt. %, SiO.sub.

Abstract: A bimetallic cylinder of steel having an alloy inlay which includes chromium boride in a matrix of iron alloy containing carbon, silicon, nickel and copper. The chromium boride imparts wear resistance to the inlay and relatively high contents of chromium, nickel and silicon and the presence of molybdenum and copper in the alloy make it resistant to corrosion. The cylinder is useful for injection molding and extrusion of plastics.

Abstract: A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw or less. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300 K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.

Abstract: A high strength lead frame material consists essentially, by weight, of 0.5 to 22% Co, 22 to 32.5% Ni, not more than 1.0% Mn and not more than 0.5% Si and the balance Fe and incidental impurities. The contents of Ni and Co are selected so that the Ni content is 27 to 32.5% when the Co content is less than 12%, and so that, when the Co content is not less than 12%, the Ni content and the Co content meet the condition of 66%.ltoreq.2Ni+Co.ltoreq.74%. The material has a multi-phase structure formed of austenitic phase, martensitic phase, and ferritic phase, the austenitic phase occupying not less than 50% of the structure.The method of producing the alloy of the invention comprises the steps of solid-solutioning the material of the above composition at a temperature not less than austenitizing completion temperature, cold-rolling the material at a rate of 40 6to 90% in reduction, and annealing the material at a temperature less than the austenitizing completion temperature.

Abstract: A Ni-Fe-Cr soft magnetic alloy essentially consisting of 40-50% Ni, 0.5-5% Cr and balance Fe and satisfying the following conditions:50.ltoreq.(Ni%)+4.times.(Cr%).ltoreq.60;S+O+B.ltoreq.0.008%;S.ltoreq.0.003%;O.ltoreq.0.005%; andB.ltoreq.0.005%;has excellent magnetic characteristics for magnetic core materials.

Abstract: An Fe-Ni alloy sheet for a shadow mask, which consists essentially of:nickel: from 34 to 38 wt. %,silicon: from 0.01 to 0.15 wt. %,manganese: from 0.01 to 1.00 wt. %, andthe balance being iron and incidental impurities;the surface portion of the alloy sheet having a silicon (si) segregation rate, as expressed by the following formula, of up to 10%: ##EQU1## and the alloy sheet having a surface roughness which satisfies all the following formulae (1) to (3):0.3 .mu.m.ltoreq.Ra.ltoreq.0.8 .mu.m (1)where, Ra: center-line mean roughness;3.ltoreq.Rkr.ltoreq.

Abstract: Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz element is brought into contact with the molten cap during the pulling operation. A quartz ring which is arranged concentrically beneath the induction heating coil and can be lowered from a rest position into its working position on the molten cap is suitable as a flat element. The ingot material obtained in this manner and also the silicon wafers produced therefrom combine the purity advantages of zone-pulled silicon with the beneficial gettering and hardening action of the incorporated oxygen which otherwise distinguishes only crucible-pulled silicon.

Abstract: A process for producing a low alloy white cast iron is disclosed. The process comprises the steps of selecting one of a group of four alloying elements for a nickel, molybdenum/copper or modified low alloy iron; the four alloying groups consisting essentially, by weight percent of about:Group 1: 2.5 to 4.0% carbon; 0.3 to 0.8% silicon; 0.3 to 0.8% manganese; 0.75 to 2.0% nickel; 0 to 0.75% chromium.Group 2: 3.0 to 4.5% carbon; 0.3 to 0.8% silicon; 0.3 to 1.0% manganese; 0 to 0.8% molybdenum; and 0.3 to 1.0% copper.Group 3: 3.0 to 4.5% carbon; 0.3 to 0.8% silicon; 0.3 to 1.0% manganese; and 0.3 to 0.

Abstract: A high strength lead frame material consists, by weight, of 0.5 to 22% Co, 22 to 32.5% Ni, not more than 1.0% Mn and not more than 0.5% Si and the balance Fe and incidental impurities. The contents of Ni and Co are selected so that the Ni content is 27 to 32.5% when the Co content is less than 12%, and so that, when the Co content is not less than 12%, the Ni content and the Co content meet the condition of 66%.ltoreq. 2Ni+Co.ltoreq.74%. The material has a two-phase structure formed of austenitic phase and martensitic phase, the austenitic phase occupying not less than 50% of the structure.

Abstract: Martensite-hardenable steel, particularly for the production of molds for plastic materials, which consists in weight % of______________________________________ carbon 0.06-0.2 silicon 0.15-0.8 manganese 1.4-3.6 sulfur 0.12-0.4 chromium 0-0.9 nickel 2.8-4.3 vanadium 0.03-0.15 copper 0.1-4.0 aluminum 0.1-4.0 aluminum + copper 0.9-4.1 niobium 0.03-0.12 zirconium 0.01-0.1 calcium 0-0.01 titanium 0.01-0.1 molybdenum 0-1.0 tungsten 0-1.0 Mo + W/2 0-1.5 residue: iron and production impurities.

Abstract: A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75.According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.

Abstract: In production of alloy for lead frames used in semiconductor integration circuits, a Fe-base alloy of a specified composition is annealed at a temperature above its recrystallization point and, thereafter, worked at 13 to 40% degree of working in order to subject the resultant elongation by thermal expansion close to those of Si, SiC and Si.sub.3 N.sub.4 over wide range of temperature.

Abstract: A nickel-based solder for high-temperatured soldered joints contains up to 15 percent by weight silicon with necessary additives of titanium, zirconium, niobium, arsenic, phosphorus, copper, zinc, indium, germanium, scandium or carbon, and is manufactured in the form or a band or ribbon by rapid quenching from a melt. The resulting rapidly quenched solder ribbon is ductile, and has a crystalline structure.

Abstract: A low thermal expansion casting alloy which is excellent in machinability, has a reduced thermal expansion coefficient and is suited for use in applications such as precision machine parts. According to a first aspect of the invention, the alloy comprises, in terms of weight percent, C from 0.4% to 0.8%, Ni from 30.0% to 40.0%, and Co from 2.0% to 8.0%, the Ni and Co contents being in the composition range given by the formula Ni+Co.times.0.75=32.0-40.0%, the balance being Si 1.0% or less, Mn 1.0% or less S 0.2% or less, P 0.2% or less, one or two or Mg and Ca 0.3% or less in total, unavoidable impurities and iron. According to a second aspect, the alloy of the first aspect is heated to a temperature between 600.degree. and 1000.degree. C. and then quenched. Accordingly to a third aspect, the alloy comprises by weight percent C from 0.6% to 1.4% and Ni from 32.0% to 40.0%, the C and Si contents being in the composition range given by the formula C+Si.times.0.5<1.

Abstract: In a process for preparing an infrared sentitive photodiode comprising the teps of:(1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of PbSe, PbTe, PbSe.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y Se, Pb.sub.y Sn.sub.1-y Te, Pb.sub.y Sn.sub.1-y Se.sub.x Te.sub.1-x, Pb.sub.z Cd.sub.1-z Se, Pb.sub.z Cd.sub.1-z Te, and Pb.sub.z Cd.sub.1-z Se.sub.x Te.sub.1-x, wherein 0<x<1, 0<y<1, and 0<z<1, to cover at least a portion of the surface of a substrate composed of an infrared transparent single crystal material selected from the group consisting of(a) alkali metal halides and(b) alkaline earth halides;(2) coating the epitaxial layer of semiconductor alloy material with a thin layer of a lead halide selected from the group consisting of PbCl.sub.2, PbBr.sub.2, PbF.sub.

Abstract: An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.

Abstract: A method of producing a shadow mask for use in a color cathode ray tube, has the following steps which are conducted in sequence: preparing an alloy sheet having a composition consisting of 30 to 50 wt % of Ni, 1 to 5 wt % of Ti and the balance substantially Fe and incidental impurities; perforating the alloy sheet by etching; subjecting the etched alloy sheet to a solution heat treatment; forming the alloy sheet after the solution heat treatment into a predetermined form; subjecting the formed alloy sheet to an age-hardening treatment by holding the alloy sheet within a non-oxidizing atmosphere at a temperature ranging between 650.degree. and 750.degree. C.; and subjecting the alloy sheet after the solution heat treatment to a surface blackening treatment thereby forming a black film on the surface of the alloy sheet.

Abstract: The present invention is directed to maraging steels, and particularly to a maraging steel of the cobalt-free type possessing such a combination of strength and fracture toughness that it is suitable for use in respect of demanding applications requiring product forms of very substantial section size.

Abstract: A high strength austenitic steel having a yield strength above 600 N/mm.sup.2 at 02% permanent strain, containing about 0.5 to 1.5% by weight of nitrogen, about 6 to 12% by weight cobalt, and less than 5% by weight nickel. The steel is treated at about 1050.degree. C. to 1200.degree. C. and then quenched in water.

Abstract: A process for manufacturing a silicon-germanium alloy comprising introducing SiH.sub.4 gas, GeCl.sub.4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750.degree. C., and depositing a thickly-grown, bulky silicon-germanium alloy upon the substrate within the reaction vessel.

Abstract: Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.

Abstract: A low cobalt maraging steel has a yield strength of at least about 240 ksi (about 1655 MPa) in the aged condition in combination with good toughness as indicated by a longitudinal Charpy V-notch impact toughness of at least aobut 20 ft-lb (about 27 J), as well as good notch ductility. The alloy contains, in weight percent, about:______________________________________ w/o ______________________________________ C 0.02 Max. Ni 15-20 Mo 0.50-4.0 Co 0.5-5.0 Ti 0.90-1.35 Nb 0.03-0.35 Al 0.3 Max. B Up to 0.015 ______________________________________The balance is essentially iron, optional additions, and the usual impurities found in commercial grades of high nickel, low carbon maraging steels. The alloy is further characterized in that the ratio %Co:%Mo is at least about 0.3 and %Ti+%Nb.gtoreq.1.0.

Abstract: A component of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter consists of an alternate succession of layers of a first type and layers of a second type deposited on the substrate. The lattice parameter of the first type of layers is substantially matched with the lattice parameter of the substrate. In the case of the second type of layers, the lattice parameter is matched and even equal to that of the first type of layers. A component having a lattice parameter equal to that of the second type of layers is formed on the last layer of the second type. Moreover, the energy gaps of the two types of layers are different.

Abstract: A process for producing a Ni-steel with high crack-arresting capability is disclosed. The process comprises the steps of:heating a steel material containing 2.0-10% of Ni to a temperature between 900 and 1,000.degree. C.;hot rolling the steel material to provide a cummulative reduction of 40-70% at 850.degree. C. or below, and finishing the rolling operation at 700.degree.-800.degree. C.;immediately after completion of the rolling step, quenching the steel material to a temperature not higher than 300.degree. C.; andsubsequently tempering the quenched slab at a temperture not higher than the Ac.sub.1 point.

Abstract: A wear resistance rail which comprises 0.50 to 0.85 wt. % of C, 0.10 to 1.0 wt. % of Si, 0.50 to 1.50 wt. % of Mn, less than 0.035 wt. % of P, less than 0.035 wt. % of S, less than 0.050 wt. % of Al, and the balance of iron and impurities. The web has a high toughness tempered bainite structure, tempered martensite structure or a tempered mixed structure of bainite and martensite and the head rail has high wear resistance which prevents unstable destructive cracks from propagating. The rail can further contain one or more of 0.05 to 1.50 wt. % of Cr, 0.05 to 0.20 wt. % of Mo, 0.03 to 0.10 wt. % of V, 0.10 to 1.00 wt. % of Ni, and 0.005 to 0.050 wt. % of Nb.

Abstract: The invention concerns a strip or sheet of ferritic stainless steel of the following composition (% by weight):(C+N)<.060;Si<0.9;Mn<1;Cr=15 to 19;Mo<1;Ni<0.5;Ti<0.1;Cu<0.4;S<0.02;P<0.045;Zr=0.10 to 0.40, and 7(C+N).ltoreq.Zr.ltoreq.7(C+N)+0.15;Nb=0.25 to 0.55, in non-combined form;Al=0.020 to 0.080;Fe=the balance,in which Al is essentially in solid solution.The process for the production of the sheet or strip comprises a final annealing operation which is carried out at between 980.degree. and 1020.degree. C., typically for 0.5 to 5 minutes at between 990.degree. and 1010.degree. C.The strip or sheet according to the invention is used for any application requiring an economic compromise in regard to ductility (sheet and welds), hot resistance and resistance to corrosion, for example in motor vehicle exhaust manifolds.

Abstract: A cast austenitic stainless steel bushing for relatively high temperature turbocharger and automotive applications is provided having good hot hardness and hot strength properties and a co-effficient of thermal expansion approximating that of the parent housing alloy. Bushings made of this alloy have a composition in the range of 29-32% chromium; 4-8% nickel, 1.0-1.5% columbium and tantalum; 1.3-1.7% carbon, 0.25-0.45% sulfur, 0.3-0.4% nitrogen, up to 1.0% manganese, up to 1.0% silicon, up to 1.0% molybdenum, up to 0.1% phosphorous, balance iron.

Abstract: The invention concerns a method for manufacturing a worked weldable, low temperature ferritic steel consisting of0.015 to 0.08% C0.1 to 0.5% Si0.3 to 0.6% Mn<0.015% P<0.015% S4 to 7% Ni0 to 1.5% Cuthe rest iron and unavoidable impurities in normal amounts which is characterized in that the steel has added to it 0.15 to 0.25% vanadian and 0.020 to 0.030% nitrogen; the steel being rolled and then cooled to room temperature and finally subjected to a one time normalizing. Such a steel is usable as work material for making construction part especially for the transport and storage of liquified natural gas and having at a temperature of -196.degree. C. a notch charpy impact value at longitudinal test samples of more than 42 J.

Abstract: A method for manufacturing a low-alloy steel product having a very high hardenability in relation to its alloying content is disclosed. The method includes the steps of melting the steel; adding thereto a micro-alloying ingredient selected from the group consisting of aluminum, titanium, and aluminum and titanium together; superheating the melt to a temperature of at least 1625.degree. C., holding the melt at that temperature level for at least two minutes; teeming and costing the melt to form ingots and hot-working the ingots to form a low alloy steel product.

Abstract: Ni-based alloys comprising 8 to 34 atom % of Al, 2 to 70 atom % of one or more elements selected from the group consisting of Fe, Co, Mn, and Si (providing that each or total of Fe and Co is present in an amount of 2 to 70 atom % and/or each or total of Mn and Si is present in an amount of 2 to 25 atom %), and the balance to make up to 100 atom % of substantially pure Ni, and possessing great strength and high ductility.These alloys enjoy outstanding ductility and strength and, therefore, are ideally useful for various filter materials and composite materials.

Abstract: In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.

Abstract: A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprises the steps of: forming a wiring pattern comprising aluminum as a major component on a semiconductor element; and ion-implanting one of boron and a mixture of boron and silicon in the wiring pattern and alloying at least a surface layer of the wiring pattern to form an alloy layer containing aluminum, boron and silicon.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.