Abstract: A polishing apparatus of a semiconductor wafer by a chemical-mechanical polishing method including a polishing platen having an upper surface on which a polishing pad is attached. The polishing platen is rotated in one direction along a central axis. A plurality of coaxial polishing-dressing head assemblies each having a lower surface opposed to an upper surface of the polishing pad on the polishing platen. Each of the coaxial assemblies holds a wafer to be polished while rotating along a central axis and pressing the rotating wafers on a radial portion of the rotating polishing pad. A polishing pad dressing ring is mounted coaxially encircling each of the wafer supporting heads. The applied compression on the wafer supporting heads pushes the wafer and the coaxially mounted dressing ring against the upper surface of the polishing pad therefore polishing each wafer while dressing the polishing pad.

Abstract: A CMP polishing head having multiple concentric pressure zones for selectively increasing polishing pressure against selected regions of a semiconductor wafer in order to compensate for variations in polishing rates on the wafer surface otherwise caused by ridges or other non-uniformities in the wafer surface. The polishing head of the present invention comprises multiple, concentric, inflatable pressure rings each of which may be selectively inflated to increase the polishing pressure against a concentric ridge or material elevation on the corresponding concentric region of the wafer surface and increase the polishing rate of the concentric ridge or elevation between the rotating polishing head and a stationary polishing pad. A channel selector may be included in the polishing head for selectively aligning an air/pressure vacuum source with a selected one of multiple pressure tubes that connect to the respective pressure rings.

Abstract: An invention is provided for a retaining ring for use in a chemical mechanical planarization system. The retaining ring includes an annular retaining ring capable of holding a flatted wafer in position during a CMP operation. The flatted wafer has a first corner and a second corner disposed on a flatted edge of the wafer. Also included is a plurality of profiled teeth disposed along an interior surface of the annular retaining ring. The profiled teeth are separated from each other such that the first comer and the second corner of the wafer do not contact profiled teeth simultaneously at all orientations of the wafer in the retaining ring. In addition, a surface of each tooth that contacts the wafer is inclined so as to form an angle greater than 90° relative to a polishing surface and away from the center of the wafer.

Abstract: The present invention related to a CMP equipment, compatible with the existing manufacture processes. The CMP equipment of the present invention employs strip polishing platens that can be smaller than the wafer size, so that the layout is compact and the space is effectively utilized, leading to high throughput and efficient production management. The present invention provides a CMP equipment that offers greater flexibility in performing CMP for different fabrication processes through the choices of various polishing pads and/or polishing slurry.

Abstract: A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A method of grinding the rear side of a semiconductor wafer, the front side of which has bumps formed thereon, includes the steps of: preparing semiconductor wafers whose front surfaces have a plurality of circuits formed in their lattice patterns; coating the front side of a selected semiconductor wafer with a resist material to form a resist layer thereon; forming a plurality of holes in each section of the resist layer at which are to be formed bumps corresponding to the circuits by removing the resist; plating at the holes with a metal to form bumps; putting the semiconductor wafer on a selected chuck table with resist layer, which is formed on its front side, laid on the chuck table in a grinding machine; and grinding the rear side of the semiconductor wafer.

Abstract: A method of manufacturing semiconductor devices using an improved planarization process for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer using a fixed flexible planar interface material contacting the deformable material.

Abstract: CMP slurries for oxide film and a method for forming a metal line contact plug of a semiconductor device are described herein. When a polishing process of a multi-layer film is performed by using the disclosed CMP slurry for oxide film including an HXOn compound (wherein n is an integer from 1 to 4), a stable landing plug poly can be formed by preventing step differences by reducing interlayer polishing speed differences.

Abstract: The present invention related to a CMP equipment, compatible with the existing manufacture processes. The CMP equipment of the present invention employs strip polishing platens that can be smaller than the wafer size, so that the layout is compact and the space is effectively utilized, leading to high throughput and efficient production management. The present invention provides a CMP equipment that offers greater flexibility in performing CMP for different fabrication processes through the choices of various polishing pads and/or polishing slurry.

Abstract: An apparatus for performing a global planarization of a surface of a deformable layer of a wafer on a production scale. The apparatus includes a chamber having a pressing surface and containing a rigid plate and a flexible pressing member or “puck” disposed between the rigid plate and the pressing surface. A wafer having a deformable outermost layer is placed on the flexible pressing member so the deformable layer of the wafer is directly opposite and substantially parallel to the pressing surface. Force is applied to the rigid plate which propagates through the flexible pressing member to press the deformable layer of the wafer against the pressing surface. Preferably, a bellows arrangement is used to ensure a uniformly applied force to the rigid plate. The flexible puck serves to provide a self adjusting mode of uniformly distributing the applied force to the wafer, ensuring the formation of a high quality planar surface.

Abstract: Temperature regulation systems and methods for controlling the temperature of polishing pads used in planarizing micro-device workpieces are disclosed herein. In one embodiment, an apparatus for polishing a workpiece includes a platen defining a planarizing zone and a primary duct system. The platen can have a first duct, and the primary duct system can have a second duct operatively coupled to the first duct of the platen. The second duct is configured to direct a gas flow laterally relative to the planarizing zone. The apparatus also includes a pad support carried by the primary duct system, and a polishing pad carried by the pad support. The pad support can have a plurality of apertures that are in fluid communication with the gas flow in the second duct.

Abstract: A system, apparatus and method is disclosed for providing a consistent liquid mixture according to a predetermined recipe for use at a point of use. The apparatus includes a plurality of liquid component reservoirs in which a constant gas pressure is maintained. A plurality of valves are provided, with individual valves connected to an outlet port of each reservoir. An electronic controller controls the valve actuation in a repetitive sequence to discharge predetermined doses of selected liquid components for mixing to form the consistent liquid mixture. A mixing section receives the sequence of doses to mix them together to form the liquid mixture.

Abstract: A surface of a vapor-phase deposited, synthetic thin diamond film is polished by: preparing a polishing liquid of silicon dioxide powder particles having an average particle size within the range of from 5 to 1,000 nm dispersed and distributed in an aqueous solution in an amount of from 5 to 40 wt. %, the dispersion having a coefficient of viscosity of from 1 to 200 cP and a pH of from 8 to 12.5, applying the polishing liquid to a surface of a vapor-phase synthetic thin diamond film and bringing a flat surface of a stool composed of a soft artificial or natural organic material into contact with the surface; and repetitively applying a mutual planar movement under pressure between the surface of said stool and the surface of the thin diamond film.

Abstract: A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishing gas is charged. The polishing head holds a wafer and has a wafer gas input through which a wafer gas is charged. The pressure suppression device has a pressure releasing component and a gas input tube coupled to the wafer gas input and the pressure releasing component. When a polishing pressure applied to the polishing pad is smaller than a wafer pressure applied to the wafer, the pressure releasing component releases a part of the wafer pressure until the wafer pressure is smaller than the polishing pressure. As a result, this prevents the wafer slippage or broken wafer that occur when the wafer is blown off from the polishing head by too much wafer pressure.

Abstract: A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate.

Abstract: An abrasive pad for CMP has a substrate and an abrasive layer disposed on the substrate. An abrasive pad for CMP having a substrate and an abrasive layer disposed on the substrate, wherein said abrasive layer has a three-dimensional structure including a plurality of regularly arranged three-dimensional elements having a predetermined shape, and said abrasive layer comprises an abrasive composite containing advanced alumina abrasive grains produced by a CVD method and a binder as construction components.

Abstract: In a first aspect, a liquid delivery system is provided that includes a first liquid delivery module adapted to store and dispense a first chemical and a second liquid delivery module adapted to store and dispense a second chemical. The liquid delivery system further includes at least one connecting mechanism coupled to the first and second delivery modules and adapted to couple the first and second delivery modules to a substrate processing device. Each delivery module includes a vessel including a first chamber and a second chamber. The vessel is configured to receive a liquid from a bulk supply and to receive a pressurized flow of gas from a gas source. Each liquid delivery module also includes a valve assembly operable to selectively permit fluid communication between the first chamber and the second chamber during a non-refill state and to prevent fluid communication between the first chamber and the second chamber during a refill state.

Abstract: An method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof and a backing plate positioned on a side of the main disk opposite the first side. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. When the template is releasably secured to and rotatable with a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head. A plurality of shims are selectively received within respective cavities between a base of the cavity and the holding disk for adjusting a depth of the cavity thereby adjusting an amount of a wafer to be lapped and polished. The shims have varying thickness' and are color coated, each color being representative of a predetermined thickness for the shim.

Abstract: A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Abstract: A wafer having a polished surface of copper is caused to contact a pad serving as an abrasive member, and the copper is polished while supplying a slurry containing mechanical and chemical polishing particles. Thereafter, when a finishing member of diamond having a large number of fine protrusions is scanned while the finishing member contacts the surface of the pad, a chelating agent, such as oxtail acid, is supplied to the surface of the pad as a dressing solution. Thus, reaction products, which have been produced by the reactions of copper with the slurry and which have adhered to the surface of the pad to be difficult to be dissolved in water, are dissolved, so that the reaction products can be removed in a short time. Thus, the reaction products having adhered to the abrasive member after polishing the wafer can be remove in a short time, so that the time required to carry out the CMP process can be shortened.

Abstract: A new method is provided for the removal of metal residue or nodules from surfaces that are target surfaces during the process of metal sputtering. A polishing bit is applied in a rotating manner to a surface on which nodules have been formed, this application removes the nodules from the target surface and prepares the surface for further processing steps.

Abstract: Methods and apparatus for controlling the temperature of a process surface and for conditioning of a process surface are provided. In one example, a temperature controller is described within a CMP system. The CMP system has a first roller and a second roller and a linear belt circulating around the first and second rollers. The linear belt has a width that spans between a first edge and a second edge. The temperature controller includes an array of thermal elements. Each of the thermal elements of the array is independently controlled. The array of thermal elements is positioned between the first roller and the second roller and configured to contact a back surface of the linear belt. The array of thermal elements extends between the first edge and the second edge of the linear belt width.

Abstract: The present invention provides apparatus and methods for detecting removal of a material in a chemical mechanical polishing process that uses a solution and operates upon a top layer made of a material that is disposed over another layer on a multi-layer workpiece. When the top layer from the workpiece is removed using chemical mechanical polishing with the solution, a flow of used solution results, with the flow of used solution containing therein the material removed from the top layer. While removing the top layer, a beam of light is transmitted on the flow of used solution to obtain an output beam of light that is altered due to absorption by the material, and a change in a characteristic of the output beam of light from the beam of light indicative of a change in an amount of the material within the flow of used solution is detected.

Abstract: Methods, compositions, and apparatus are provided for planarizing conductive materials disposed on a substrate surface by an chemical polishing technique. In one aspect, a substrate having conductive material disposed thereon is disposed on a substrate support and exposed to a composition containing an oxidizing agent and an inorganic etchant. The substrate is planarized by the composition without the presence of mechanical abrasion. The substrate may optionally be rotated, agitated, or both during exposure to the composition. The method removes conductive materials forming protuberances on the substrate surface at a higher rate than conductive materials forming recesses on the substrate surface.

Abstract: A method for preventing deposition of abrasive particles included in a surfactant containing slurry along flow pathways in a chemical mechanical polishing (CMP) slurry delivery system including providing a CMP delivery system having one or more flow pathways for delivering a surfactant containing slurry to at least one polishing station the surfactant containing slurry including abrasive particles; providing at least a fluid contact portion of the one or more flow pathways including at least flow pathway feed lines with a dipole inactive material for contacting the surfactant containing slurry; and, controllably delivering the surfactant containing slurry along the flow pathway feed lines to the at least one polishing station to perform a CMP process.

Abstract: A chemical mechanical planarization system and method for planarizing wafers is provided. The system generally includes a transfer corridor, at least one corridor robot, one or more polishing modules and at least one loading device. The corridor robot is disposed in the transfer corridor and is positionable between a first end and a second end of the transfer corridor. The loading device is adapted to transfer workpieces between the transfer corridor and the polishing modules. Generally, the loading device includes at least one load cup. The one or more polishing modules each include one or more polishing heads for holding workpieces during processing.

Abstract: A method and apparatus for providing a substantially constant environment in the cavity surrounding the optical pathway during the chemical mechanical planarization (CMP) operation is provided. In one embodiment, a system for planarizing the surface of a substrate is provided. The system includes a platen configured to rotate about its center axis. The platen supports an optical view-port assembly for assisting in determining a thickness of a layer of the substrate. A polishing pad disposed over the platen is included. The polishing pad has an aperture overlying a window of the optical view-port assembly. A carrier for holding the substrate over the polishing pad is also included. A cavity defined between the surface of the substrate and the window is included. A fluid delivery system adapted to provide a stable environment in the cavity during a chemical mechanical planarization (CMP) operation is included.

Abstract: A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.

Abstract: Techniques for controlling an output property during wafer processing include forwarding feedforward and feedback information between functional units in a wafer manufacturing facility. At least some embodiments of the invention envision implementing such techniques in a copper wiring module to optimize a sheet resistance or an interconnect line resistance. Initially, a first wafer property is measured during or after processing by a plating process. Subsequently, the wafer is forwarded to a polishing process. A second wafer property is then measured during or after processing by the second process. At least one of these first and second wafer properties are used to optimize the second process. Specifically, one or more target parameters of a second process recipe are adjusted in a manner that obtains a desired final output property on the wafer by using these first and second wafer properties.

Abstract: A system for characterizing a chemical mechanical polishing process is provided. The system includes a wafer that has a metal, polysilicon, and/or dielectric layer and/or substrate and electrical resistance member(s) and/or electrical resistance entities located in and/or on the metal, polysilicon and/or dielectric layer and/or substrate. The system also includes a electrical resistance monitoring system that can read the wafer electrical resistance(s) from the electrical resistance member(s) and/or electrical resistance entities and that can determine wafer stress(es) based upon the electrical resistance(s) to characterize the chemical mechanical polishing process. Such characterization includes producing information concerning relationships between wafer electrical resistance(s) and polishing rate, polishing uniformity and introduction of defects during polishing. Such relationships are correlated with wafer electrical resistance(s) (e.g.

Abstract: Improved methods, compositions and structures formed therefrom are provided that allow for reduction of roughness in layers (e.g., oxide layers) of a planarized wafer. In one such embodiment, improved methods, compositions and structures formed therefrom for reduction of roughness in layers (e.g., oxide layers) of a planarized wafer are used in conjunction with high modulus polyurethane pads. In one embodiment, improved methods, compositions and structures formed therefrom are provided that reduce rough interlayer dielectric (ILD) conditions for a wafer during CMP processing of such a wafer. Embodiments of a method for forming a microelectronic substrate include mixing a surfactant at least 100 parts per million (ppm) to slurries to form a polishing solution.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A polishing pad for use in polishing a surface of a substrate comprises a pad main body having a polishing surface and a plurality of electrode portions formed within the pad main body and mutually spaced apart in a plane direction of the pad main body. Each electrode portion is formed of a conductive portion and an insulating portion formed on the conductive portion.

Abstract: The present invention is a chemical mechanical polishing apparatus which polishes a substrate by causing relative movement of this substrate and a polishing pad in a state in which a polishing liquid is interposed between this polishing pad and the substrate, wherein the shape of the above-mentioned polishing pad is an annular shape in which the central portion of a circle or ellipse is bored through in a circular or elliptical shape that has a smaller diameter. The internal diameter li of the hole that is bored through the annular polishing pad is 5 to 75%, preferably 30 to 50%, of the external diameter lo of the polishing pad.

Abstract: Methods and apparatus are provided for combining the manufacturing of a fixed-abrasive substrate and the chemical mechanical planarization of semiconductor wafers using a single process path.

Abstract: A slurry collection device 1 includes a ring-shaped barrier member 2 provided around a turntable T of a polishing machine E and a ring-shaped slurry collection container 3 provided around the barrier member 2. The turntable T is connected to an upper end of a main rotation shaft T1 that sticks out from a bottom portion of a sink S of the polishing machine E and is lifted from the bottom portion of the sink S. The slurry collection device 1 of the present invention is inserted between the turntable T and the sink S.

Abstract: A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.

Abstract: The present invention includes a polishing pad or belt secured to a mechanism that allows the pad or belt to move in a reciprocating manner, i.e. in both forward and reverse directions, at high speeds. The constant bidirectional movement of the polishing pad or belt as it polishes the wafer provides superior planarity and uniformity across the wafer surface. When a fresh portion of the pad is required, the pad is moved through a drive system containing rollers, such that the rollers only touch a back side of the pad, thereby minimizing sources of friction other than the wafer that is being polished from the polishing side of the pad, and maximizing the lifetime of the polishing pad.

Abstract: A retaining ring is configured for use with an apparatus for polishing a substrate. The substrate has upper and lower faces and a perimeter. The apparatus has a movable polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retaining ring has a retaining face for engaging and retaining the substrate against lateral movement and a bottom face for contacting the polishing surface of the polishing pad. The bottom face of the retaining ring extends downward from an inner portion adjacent the retaining face to a lowermost portion radially outboard of the retaining face.

Abstract: Planarizing solutions, planarizing machines and methods for planarizing microelectronic-device substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. In one aspect of the invention, a microelectronic-device substrate assembly is planarized by abrading material from the substrate assembly using a plurality of first abrasive particles and removing material from the substrate assembly using a plurality second abrasive particles. The first abrasive particles have a first planarizing attribute, and the second abrasive particles have a second planarizing attribute. The first and second planarizing attributes are different from one another to preferably selectively remove topographical features from substrate assembly and/or selectively remove different types of material at the substrate surface.

Abstract: The apparatus is provided for preparing and/or supplying a slurry for a CMP apparatus in which a device is adopted to avoid drying a slurry thereby eliminating coagulation and solidification of the slurry. A slurry preparation apparatus comprises a tank for preparing and/or supplying the slurry, a humidity sensor located inside the tank, a humidifying air supply device for supplying humidifying air into the tank. Humidity in the tank is measured by the humidity sensor, and the amount of humidifying air to be supplied from the humidifying air supply device is controlled according to the measurements, thereby conditioning inside the tank to a desired humidity.

Abstract: An ultrasonic driver (105) is used to vibrate a filter disk (103) at ultrasonic frequencies. Vibrations are used to break up agglomerates into smaller pieces that pass through filter disk (103). The energy is controlled to minimize the translational energy given to the particles as they are broken up to prevent reagglomeration. The frequency and amplitude of the vibration is controlled to operate out of or in low energy cavitation.

Abstract: Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.

Abstract: The invention provides a method for polishing a substrate comprising a metal layer using a chemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, an oxidizer that is a stronger oxidant than the rare earth salt, and a liquid carrier.

Abstract: A wafer polishing apparatus 19 comprising a polishing head 3 having a retainer ring 20 provided around the periphery of a wafer W for suppressing movement of the wafer W in the radial direction during polishing. The retainer ring 20 comprises an attachment plate 21 affixed to the polishing head 3, a ceramic friction ring 22 brought into contact with a polishing pad 2, and a resin spacer 23 provided between the attachment plate 21 and the friction ring 22.

Abstract: A small footprint, integrated and automated semiconductor wafer processing system for planarizing semiconductor wafers. That processing system includes a wafer load station, at least one CMP polishing system, and at least one cleaning system. Also included is at least one wafer unload station and a robotic system. The robotic system, which includes from two to six robotic movers, moves semiconductor wafers through the semiconductor wafer processing system. The semiconductor wafer processing system can also include a buffer system for temporarily holding semiconductor wafers. The buffer system, the robotic system, the cleaning system, the wafer load station, and/or the wafer unload station in some applications are capable of Z-axis motion. CMP polishing systems and cleaning systems can be vertically or linearly stacked.

Abstract: An apparatus and method of reclaiming a disk substrate. The cost of reclaiming a disk substrate can be lower, and the quality higher, than making a new one from a blank. A layer of a data storage disk is stripped, e.g., by acid/oxidizing bath immersion. The stripped disk is polished in a carrier between polishing pads, with the relative velocity of the polishing pads as seen by the disk being precisely controlled so that an equal amount of stock is removed from each side. Preferably, several stripped disks are sorted into groups based on disk thickness, and disks from one of the groups are simultaneously polished in the carrier. Sorting improves stock removal uniformity from disk to disk. The polished disks are cleaned and, preferably, ordered in a cassette for stacking in a storage device based on disk thickness to more easily meet a mean center specification.

Abstract: The present invention relates to methods for repairing defects on a semiconductor substrate. This is accomplished by selectively depositing the conductive material in defective portions in the cavities while removing residual portions from the field regions of the substrate. Another method according to the present invention includes forming a uniform conductive material overburden on a top surface of the substrate. The present invention also discloses a method for depositing a second conductive material on the first conductive material of the substrate.

Abstract: A wafer planarizing apparatus includes a cleaner that prevents contamination caused by a fume phenomenon occurring when slurry is cleaned from a base of a polishing station. The cleaner has spout holes through which a cleaning solution is applied to a side of a platen of the polishing station. As the cleaning solution flows along the side of the platen, the side of the platen is cleaned. Beneficially, a main body of the cleaner has an arch-shaped upper side so as to stream down foreign materials.