Abstract: According to one embodiment, there is provided a top ring for holding a substrate. The top ring comprises a substrate supporting surface, a retainer member disposed to surround an outer periphery of the substrate supporting surface, and a retainer guiding device configured to guide the retainer member so as to allow the retainer member to be displaced in a direction perpendicular to the substrate supporting surface, and support the retainer member so as to inhibit the retainer member from being displaced in a direction parallel to and away from the substrate supporting surface. The retainer guiding device is disposed in an inner side of the retainer member surrounding the substrate supporting surface.

Abstract: Embodiments herein relate to a retaining ring for use in a polishing process. The retaining ring includes an annular body having an upper surface and a lower surface. An inner surface is connected to the upper surface and the lower surface. The inner surface includes one or more surfaces that are used to retain a substrate during processing. The one or more surfaces have an angle relative to a central axis of the retaining ring. The inner surface also includes a plurality of facets. Channels are disposed within the retaining ring to allow passage of a polishing fluid from an inner surface to an outer surface of the retaining ring disposed opposite of the inner surface.

Abstract: A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

Abstract: An end effector comprises a plurality of vacuum ports. The plurality of vacuum ports is formed from a plurality of hollow protrusions extending from a face of the end effector. The plurality of vacuum ports is connected to a vacuum chamber receiving a vacuum from a vacuum source interface.

Abstract: The polishing apparatus includes: a holding section that holds a material to be polished; the polishing body that polishes the material to be polished held by the holding section; the head that supports the polishing body via the elastic mechanism; a driving mechanism that causes the head to be moved in a Z coordinate direction; and a control unit that is connected to the driving mechanism and controls the driving mechanism. A load measurement device to measure a load applied to the polishing body is attached to the head, and the load measurement device is connected to the polishing body via the elastic mechanism.

Abstract: A polishing apparatus includes: a holding section that holds a material to be polished; a polishing body that polishes the material to be polished held by the holding section; a head that supports the polishing body via an elastic mechanism; a driving mechanism that causes the head to be moved in a Z coordinate direction; a control unit that controls the driving mechanism; and a position sensor that measures a position of the polishing body with respect to the head. The load control is performed based on a measurement value of the position sensor and a spring constant value of the elastic mechanism.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: The imprint process of the invention includes at least an adhesion layer-formation step, a filling step, a curing step, and a releasing step. In the adhesion layer-formation step, an adhesive including a compound including in one molecule a tetravalent atom having one hydrolysable group and two inert group, and a reactive functional group bonded to the atom is brought into contact with a substrate blank that is then scrubbed thereby forming an adhesion layer on the substrate blank to prepare a transfer substrate. In the filling step, a mold is located in proximity to the transfer substrate with a work-material interleaved between the mold and the adhesion layer to fill the work-material up in a transfer shape area of the mold; in the curing step, the work-material is cured; and in the releasing step, the mold is released off from the work-material.

Abstract: A chemical mechanical polishing apparatus includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring.

Abstract: A chemical mechanical polishing fastening fixture includes a fastening base and a fastening ring. The fastening base includes an annular substrate having a first combining face and a plurality of protruded blocks annularly aligned on the first combining face. Each protruded block is made of polyphenylene sulfide and includes a first buckling face. The first buckling face is tilted from a root portion thereof toward an outer side of the protruded block along a plane radially extending from the annular substrate. The fastening ring has a second combing face and a plurality of first grooves. The first grooves are annularly aligned on the second combining face. Parts of a flange of each first groove are constituted of a second buckling face, and the second buckling face is tilted from a root portion thereof toward the second combining face.

Abstract: A chemical mechanical polishing (CMP) system includes a substrate held in a substrate holder having a substrate retaining ring, the substrate having a peripheral edge supported by the substrate retaining ring, the retaining ring including a polymer ring having a polymer contact portion in contact with at least a portion of the peripheral edge, wherein the polymer contact portion has a hardness that is greater than a remaining portion of the polymer ring. CMP methods and retaining ring apparatus for CMP are provided, as are numerous other aspects.

Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

Abstract: An embodiment includes an annular ring having an intended direction of rotation, the ring having a top side and a bottom side, and further having an outer perimeter and an inner perimeter, and a multitude of grooves in the bottom side of the ring, each groove having an entry point at the outer perimeter connected to an exit point at the inner perimeter creating an opening through the ring, and each groove oriented so that an angle of each groove is obtuse, wherein the angle of each groove is defined as an angle between a first ray having an initial point at the entry point and having a direction along the groove towards the exit point, and a second ray having an initial point at the entry point and having a direction tangent to the annular ring at the entry point and opposite the intended direction of rotation.

Abstract: A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the first pad holder rotatable on a second axis disposed parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the second pad holder rotatable on a third axis parallel to the first axis and the second axis.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A chemical mechanical polishing to that can provide uniform polishing across a wafer even when polishing hard wafers such as AlTiC wafers used in the formation of magnetic recording sliders. The chemical mechanical polishing to has a wafer carrier that includes a diaphragm or bladder that is configured such that an inner portion of the bladder can be pneumatically pressurized so as to bow outward, while outer portions remain unpressurized.

Abstract: A polishing apparatus is used for polishing a surface of a substrate such as a semiconductor wafer to planarize the surface of the substrate. The polishing apparatus includes a polishing table having a polishing surface, and a top ring configured to hold a substrate with an outer circumferential edge of the substrate surrounded by a retainer ring and to press the substrate against the polishing surface. The top ring is movable between a polishing position above the polishing table, a position laterally of the polishing table, and a cleaning position. The polishing apparatus includes a cleaning unit disposed in the cleaning position and configured to eject a cleaning liquid toward the lower surface of the top ring, which is being rotated, thereby cleaning the substrate held by the top ring together with the lower surface of the top ring.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

Abstract: In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: The invention relates to a treatment apparatus (1) for treating a surface (21) of a body (2) with a first treatment medium (31) and a second treatment medium (32). In this respect, the treatment apparatus (1) includes a holding device (5) rotatable about an axis of rotation (4) for receiving and holding the body (2) and a rotary drive (6) rotationally fixedly coupled to the rotatable holding device (5) as well as a supply device (7) for supplying the first treatment medium (31) and the second treatment medium (32) to the surface (21) of the body (2) held in the holding device (5). The treatment apparatus includes a collection container (8) having a separation element (80) which separation element (80) divides the collection container (8) into a first chamber (81) and into a second chamber (82) such that the first treatment medium (31) can be collected in the first chamber (81) and the second treatment medium (32) can be collected separately in the second chamber (82).

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: Chemical polishing systems, methods and slurries are disclosed for the chemical-mechanical rough polishing of GaAs wafers. An exemplary polishing slurry consistent with the innovations herein may comprise dichloroisocyanurate, sulfonate, pyrophosphate, bicarbonate and silica sol. An exemplary chemical polishing method may comprise polishing a wafer in a chemical polishing apparatus in the presence of such a chemical polishing solution. Chemical polishing solutions and methods herein make it possible, for example, to improve wafer quality, decrease costs, and/or reduce environmental pollution.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: A retainer ring of a chemical-mechanical polishing device which can prevent itself from being twisted and improve defective proportion and equipment operating rate occurred when polishing semiconductor wafers by embedding a metal member inside. Retainer ring installed to a polishing head of a chemical mechanical polishing device to fix a semiconductor wafer includes: a first member of a resin connected to a carrier of the polishing head and a room is formed inside; a second member of a metal embedded into the room of the first member. The present invention can improve a defective proportion of a semiconductor wafer polishing process by above effects and can reduce initial limitation conditions accompanied to mass production to increase an equipment operation rate by providing credibility of the retaining ring.

Abstract: A retaining ring to be fitted on a chemical mechanical polishing apparatus for semiconductor wafers is disclosed, the retaining ring comprising a carrier ring made of a first material and having fitting elements for fitting the carrier ring on the polishing apparatus; and a bearing ring comprising a plastic material, arranged concentrically on the carrier ring, the bearing ring resting with a first front side on a polishing surface of the polishing apparatus and being held on its side axially opposed to the first front side releasably, non-rotatably, with a positive and/or frictional connection and without adhesive on the carrier ring; wherein the first material has a higher rigidity than the plastic material of the bearing ring.

Abstract: In one embodiment, a substrate centering apparatus for centering a substrate on a substrate support is provided. In one embodiment, the invention comprises an apparatus that is mounted to an underside of a substrate support and includes a lever that projects upward through a support surface of the substrate support. The lever may be biased toward a center of the substrate support to contact an edge of a substrate. A mechanism is coupled to the lever and moves the lever radially outward to release the substrate. In one embodiment, the mechanism is actuated as the substrate support moves downward to a position that facilitates substrate handoff.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A retainer is used with an apparatus for polishing a substrate. The substrate has upper and lower surfaces and a lateral, substantially circular, perimeter. The apparatus has a polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retainer has an inward facing retaining face for engaging and retaining the substrate against lateral movement during polishing of the substrate. The retaining face engages a substrate perimeter at more than substantially a single discrete circumferential location along the perimeter.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: The invention provides a vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof.

Abstract: A polishing apparatus comprises a polishing table having a polishing surface and a top ring for holding a substrate to be polished, in which the substrate when held by the top ring is pressed against the polishing surface of the polishing table and thus polished. A capacitance type sensor and/or an eddy-current type sensor is disposed at one or more location(s) in the vicinity of the top ring. The capacitance type sensor detects escaping of the substrate to be polished based on a change in capacitance between the capacitance type sensor and a top surface of the polishing table. The eddy-current type sensor detects escaping of the substrate to be polished based on a change in electrical resistance between the eddy-current type sensor and the top surface of the polishing table.

Abstract: Disclosed is a showerhead of a CVD apparatus comprising a plate having an empty inside and provided with a plurality of injection holes at one surface thereof; and gas supplying pipes installed at the plate so as to supply gas, wherein introduced gas thereto is injected to an upper space of the wafer through the injection holes, the plate is divided in a radial manner on the basis of a center point to be divided into a plurality of sectors having respective inner spaces independently, and the gas supplying pipes are connected to the respective sectors. According to that, gas can be independently supplied to each sector of the showerhead, thereby easily applying the CVD apparatus not only to a batch type process but also to an atomic layer deposition method.

Abstract: A holding unit holds a substrate to enable a surface of the substrate to be processed. The unit has a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.

Abstract: A retaining ring to be fitted on a chemical mechanical polishing apparatus for semiconductor wafers is disclosed, the retaining ring comprising a carrier ring made of a first material and having fitting elements for fitting the carrier ring on the polishing apparatus; and a bearing ring comprising a plastic material, arranged concentrically on the carrier ring, the bearing ring resting with a first front side on a polishing surface of the polishing apparatus and being held on its side axially opposed to the first front side releasably, non-rotatably, with a positive and/or frictional connection and without adhesive on the carrier ring; wherein the first material has a higher rigidity than the plastic material of the bearing ring.

Abstract: A substrate holding apparatus comprises a substrate holder body having a substrate holding side facing a polishing surface and holding a substrate on the substrate holding side and a retainer ring fixedly secured to the substrate holder body. The retainer ring is arranged to surround an outer periphery of the substrate held by the substrate holder body so that the retainer ring engages with the polishing surface radially outside the substrate as the polishing of the substrate is effected. The substrate holder body is provided with a membrane having inside and outside surfaces. The inside surface cooperates with a surface of the substrate holder body to define a fluid pressure chamber to which a fluid pressure is applied. The outer surface engages with the substrate held by the substrate holder body.

Abstract: An apparatus for punching CMP machine backing film. The apparatus comprises a base, a first plate, and a second plate. The base holds the backing-film. The first plate is disposed on the base in a manner such that it moves between a first position and a second position. The first plate abuts the backing-film when it is located at the second position. The second plate, having a plurality of punches, is disposed on the base in a manner such that it moves between a third position and a fourth position. The first plate is located at the first position when the second plate is located at the third position. The first plate is located at the second position when the second plate is located at the fourth position so that the punches pass through the first plate to punch the backing-film.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.

Abstract: A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.

Abstract: A system for processing a workpiece includes a process head assembly and a base assembly. The process head assembly has a process head and an upper rotor. The base assembly has a base and a lower rotor. The base and lower rotor have magnets wherein the upper rotor is engageable with the lower rotor via a magnetic force created by the magnets. The engaged upper and lower rotors form a process chamber where a semiconductor wafer is positioned for processing. Process fluids for treating the workpiece are introduced into the process chamber, optionally while the processing head spins the workpiece. Additionally, air flow around and through the process chamber is managed to reduce particle adders on the workpiece.

Abstract: The present invention generally provides an improved apparatus and method for removing an edge bead from a substrate. The apparatus includes a processing chamber having an edge bead removal fluid distribution system positioned therein and a substrate support member positioned in the processing chamber proximate the fluid distribution system. The substrate support member generally includes an upper substrate support surface having a plurality of fluid dispensing apertures formed therein, at least three capillary ring support posts radially positioned about a perimeter of the upper substrate support surface, and a annular capillary ring having a planar upper surface rigidly mounted to the capillary ring support posts.

Abstract: An apparatus for solving an edge exclusion problem when polishing a semiconductor wafer includes a rotatable polishing platen with a polishing pad attached to its upper surface. A polishing slurry is deposited on the upper surface of the polishing pad during polishing. Mounted above the polishing pad is a rotatable polishing head for holding a substrate. A non-rotary actuator assembly is coaxially oriented about the outer edge of the polishing head. A ditched ring is removably attached to the bottom surface of the actuator assembly. A multiplicity of conduit grooves are formed in the bottom section of the ditched ring that allows the polishing slurry to travel unimpeded beneath the rotating wafer. A reduced wall thickness at the bottom of the ditched ring is configured to displace wrinkles from the outer edge of the wafer to the outer periphery of the ditched ring. This solves the edge exclusion problem while permitting polishing slurry to pass under the wafer.

Abstract: A laminated wear ring for a chemical mechanical planarization (CMP) apparatus provides improved control of the removal rate of material from the edge of a wafer during a polishing/planarization operation. The laminated wear ring includes a high stiffness stainless steel base and a plastic laminate. The high stiffness stainless steel base avoids flexing of the wear ring during polishing and thus provides control of the flexing of a polish pad against which the wafer surface is pressed. The plastic laminate protects the stainless steel base from attack by the polishing slurry and provides a buffer that protects the stainless steel base from mechanically damaging the wafer and vice versa.

Abstract: A semiconductor processing station which utilizes a processing head and processing base which are complementary to enclose a processing chamber. The processing head shown has a rotor with two portions both of which rotate. The rotor has axial movable portions which include a piece holder. The piece holder supports a wafer or other semiconductor piece being processed. The piece holder can be axially extended and retracted relative to a thin membrane which acts as a cover to prevent chemicals from reaching the back side of the wafer during processing.

Abstract: An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the substrate. In addition, rather than a fixed abrasive, non-abrasive material may be applied to the surface of the patterned substrate, in which case, a conventional slurry may be used in planarization of an applied semiconductor wafer.