Abstract: A surface isolation device for isolating a predetermined area of a second surface of a wafer from an etching solution while the etching solution etches a first surface of the wafer to form a plurality of manifolds in the wafer. The surface isolation device has a base for positioning the wafer, a fixture for fixing the wafer on the base, and an isolation ring positioned on the base for isolating the predetermined area from the etching solution. When the fixture fixes the wafer on the base, the wafer sticks to the isolation ring, forming a seal that isolates the predetermined area from the etching solution.

Abstract: A chemical mechanical planarization (CMP) system having a polishing pad, a carrier body for holding a wafer, a retaining ring, and an active retaining ring support is provided. The active retaining ring is defined by a circular ring having a thickness and a width. The circular ring is defined by an elastomeric material. The circular ring is configured to be placed between the retaining ring and the carrier body. The circular ring has a plurality of voids therein, and the plurality of voids are defined in locations around the circular ring. The circular ring has a compressibility level that is set by the elastomeric material and the plurality of voids.

Abstract: A retaining ring to be fitted on a chemical mechanical polishing apparatus for semiconductor wafers is disclosed, the retaining ring comprising a carrier ring made of a first material and having fitting elements for fitting the carrier ring on the polishing apparatus; and a bearing ring comprising a plastic material, arranged concentrically on the carrier ring, the bearing ring resting with a first front side on a polishing surface of the polishing apparatus and being held on its side axially opposed to the first front side releasably, non-rotatably, with a positive and/or frictional connection and without adhesive on the carrier ring; wherein the first material has a higher rigidity than the plastic material of the bearing ring.

Abstract: An invention is provided for a retaining ring for use in a chemical mechanical planarization system. The retaining ring includes an annular retaining ring capable of holding a flatted wafer in position during a CMP operation. The flatted wafer has a first corner and a second corner disposed on a flatted edge of the wafer. Also included is a plurality of profiled teeth disposed along an interior surface of the annular retaining ring. The profiled teeth are separated from each other such that the first comer and the second corner of the wafer do not contact profiled teeth simultaneously at all orientations of the wafer in the retaining ring. In addition, a surface of each tooth that contacts the wafer is inclined so as to form an angle greater than 90° relative to a polishing surface and away from the center of the wafer.

Abstract: A carrier tool having a protective ring with a sheet extended over an underside of the ring is used, a semiconductor wafer is made to adhere to the sheet, the semiconductor wafer, being surrounded by the protective ring, is carried from a container device to a bonding stage. Bonding is performed on the bonding stage, and the wafer is carried out to another container device, consequently damage of the wafer is avoided.

Abstract: A two piece, metal and plastic, retaining ring used for chemical mechanical polishing of semiconductor substrates. In one embodiment, the plastic is selected from polyphenylene sulfide (PPS), polyethylene terephthalate, polyetheretherketone, polybutylene terephthalate, Ertalyte TX, PEEK, Torlon, Delrin, PET, Vespel, or Duratrol, and the plastic is assembled to a stainless steel ring with a urethane adhesive at room temperature. In another embodiment, the plastic is assembled to the metal portion with an acrylic adhesive at room temperature.

Abstract: A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A retaining ring is configured for use with an apparatus for polishing a substrate. The substrate has upper and lower faces and a perimeter. The apparatus has a movable polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retaining ring has a retaining face for engaging and retaining the substrate against lateral movement and a bottom face for contacting the polishing surface of the polishing pad. The bottom face of the retaining ring extends downward from an inner portion adjacent the retaining face to a lowermost portion radially outboard of the retaining face.

Abstract: A wafer carrier used for a chemical mechanical device has a polishing head and a pad conditioner. The polishing head has a retainer ring secured to a bottom of the polishing head to hold a wafer. The pad conditioner can be fixed on a surface of the retainer ring, attached to side surfaces of the retainer ring, or embedded in the retainer ring, such that the pad conditioner and the polishing head can be integrally formed.

Abstract: An apparatus for punching CMP machine backing film. The apparatus comprises a base, a first plate, and a second plate. The base holds the backing-film. The first plate is disposed on the base in a manner such that it moves between a first position and a second position. The first plate abuts the backing-film when it is located at the second position. The second plate, having a plurality of punches, is disposed on the base in a manner such that it moves between a third position and a fourth position. The first plate is located at the first position when the second plate is located at the third position. The first plate is located at the second position when the second plate is located at the fourth position so that the punches pass through the first plate to punch the backing-film.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: A plasma chamber apparatus and method having a process kit capable of reducing or eliminating electrical arcing from exposed metal at the perimeter of a workpiece. The plasma chamber includes a cathode electrode adjacent the workpiece. A process kit encircles the perimeter of the workpiece. The process kit includes a dielectric shield and an electrically conductive collar that overlies the dielectric shield. The resistivity of the conductive collar is 0.1 ohm-cm or less.

Abstract: A two piece retaining ring used for chemical mechanical polishing of semiconductor substrates. The two pieces of the ring are secured to each other by means of a central thread on the first piece and a mating thread on the second piece.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract: A process for the double-side polishing of semiconductor wafers between two polishing plates which rotate in opposite directions and are covered with polishing cloth, so that at least 2 &mgr;m of semiconductor material is removed. The semiconductor wafers lay in plastic-lined cutouts in a set of a plurality of planar carriers which are made from steel and the mean thickness of which is 2 to 20 &mgr;m smaller than the mean thickness of the fully polished semiconductor wafers. The set comprises only those carriers whose difference in thickness is at most 5 &mgr;m, and each carrier belonging to the set has at least one unambiguous identification feature which assigns it to the set. An item of information contained in the identification feature is used in order for the plastic linings to be exchanged at fixed intervals and to ensure that the semiconductor wafers remain in the same order after the polishing as before the polishing. There is also a carrier which is suitable for carrying out the process.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the abrasive cloth under a first pressing force to polish the workpiece. A guide ring is vertically movably disposed around the top ring, and pressed against the abrasive cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force.