Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

Abstract: A stripping-solution machine and working method thereof are provided. The stripping-solution machine includes: a plurality stages of chambers, which are arranged sequentially in order, wherein each stage of the chamber is correspondingly connected to a storage box; at least one filter device, wherein one end of the filter device is disposed to be connected to a storage box corresponding to a current stage chamber by a first pipe, and another end of the filter device is connected to a next stage chamber by a second pipe. Furthermore, a plurality of valve switches are at least disposed on the first pipe or the second pipe.

Abstract: A substrate processing apparatus includes a processing tank, a reservoir, a remover, a mixer, and a return path. Etching is performed on a substrate in the processing tank by immersing the substrate in a processing liquid containing a chemical liquid and silicon. The reservoir recovers and stores the processing liquid discharged from the processing tank. The remover recovers a portion of the processing liquid discharged from the processing tank, and removes silicon from the recovered processing liquid. The mixer mixes the processing liquid stored in the reservoir with the processing liquid from which silicon has been removed by the remover. The processing liquid mixed by the mixer is returned to the processing tank through a return path.

Abstract: A method includes disposing a semiconductor substrate over a chuck. The chuck has a plurality of holes therein. The semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto. A liquid layer is formed flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck. The semiconductor substrate is moved toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract: A system for decapsulating a portion of an encapsulated integrated circuit that includes copper elements has a container holding an etchant solution, a pump having an inlet port connected to the container holding an etchant solution, and an outlet port, a heat exchanger having an inlet port connected to the pump outlet port, and an outlet port from the heat exchanger, and control circuitry controlling temperature of the etchant to be at or below ambient temperature by controlling temperature of the heat exchanger.

Abstract: Provided are a cleaning method and cleaning device for cleaning with micro/nano-bubbles, with which a simple method of spraying a treatment solution containing micro/nano-bubbles onto a substrate to be processed makes it possible to efficiently and reliably peel off residual resist or remove contaminants from the substrate, while reducing an environmental load. This cleaning method is characterized in that, with respect to a substrate to be treated to which a resist film has adhered onto the substrate or a substrate to be treated to which the surface thereof has been contaminated with a metal or metal compounds, the resist film is peeled off or the metals or metal compounds are removed by spraying onto the substrate to be treated a treatment solution containing gaseous micro/nano-bubbles and having a temperature maintained at 30° C. to 90° C.

Abstract: A substrate treatment apparatus according to the present invention is provided with a first tank that stores treatment liquid for treating a substrate and a first path that returns the treatment liquid, which has spilled over from an upper part of the first tank, to a lower part of the first tank. A second path that branches from the first path, a measurement tank that stores the treatment liquid, which has flowed in from the second path, and a pressure measurement part that measures the pressure of the treatment liquid at a predetermined depth in the measurement tank in a state in which the treatment liquid spills over from an upper part of the measurement tank are provided. Therefore, techniques for highly precisely measuring the pressure of the treatment liquid used in treatment of substrates can be provided.

Abstract: An inhibitor solution injector system for an IC decapsulation apparatus has a source reservoir of inhibitor solution, a fluid injection apparatus connected to the source reservoir by a fluid passage, an injection coupling having a first input passage for inhibitor solution, and a through passage for etchant solution, the input passage intersecting with the through passage, and control circuitry controlling the controlled fluid injection apparatus. The fluid injection apparatus is controlled to draw inhibitor solution from the source reservoir, and to inject inhibitor solution through the input passage into the through passage of the injection coupling.

Abstract: Bromine containing compounds, such as calcium bromide, sodium bromide and the like, are prepared in high purity and more quickly with less waste by using a process with two bromination stages and often a third step wherein the crude product mixture can be adjusted to meet specific product requirements. In the first bromination stage, the majority, but not all, of a substrate is brominated using a reductive bromination reaction, the remaining unreacted substrate is converted to product in the second stage through another a reductive bromination reaction, although the specific reagents may be different, wherein the addition of bromine and a reducing agent are carefully monitored.

Abstract: A decapsulation apparatus has an etch plate, an off-center etch head having an opening, a cover sealing to the etch plate forming an etching chamber, a gasket surrounding the opening, a ram sealed through the cover, a pressure-controlled source of Nitrogen or inert gas continuously purging the etching chamber at a low gas pressure, a f toggle mechanism mounted to a metal plate t, an etchant supply subsystem comprising sources of etchant solutions, an etchant solution pump, supply passages and controls to select etchants and etchant ratios, and a heat exchanger heating or cooling the etchant solution, etchant waste passages f conducting used etchant away. Etchants are mixed in the passages to the reaction region, and turbulence in the reaction region is promoted by impinging etchant solution on the encapsulated device.

Abstract: The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

Abstract: The present invention relates to a process of oxidizing copper in a copper etching solution by using oxygen gas and/or air as an oxidizing agent, the process comprising the steps of: a) introducing the oxidizing agent into an acidic reduced copper etching solution comprising Cl? and Cu+, b) stirring the solution obtained in step a), and thereby allowing the reaction 2Cu++½O2 (aq)+2H+?2Cu2++H2O to occur, thereby producing an oxidized copper etching solution comprising less Cu+ than the reduced copper etching solution. An advantage of the present invention is that it provides an improved process at least in terms of the speed of the oxidation and the quality of the etching.

Abstract: Described herein are various systems and methods for using acidic media to enhance the surface characteristics of glass articles while reducing the adverse effects of precipitate/sludge formation. The systems and methods generally implement a precipitation-capturing device that is configured to 1) permit formation of sludge thereon and 2) reduce formation of the sludge on other solid surfaces involved in the systems and methods.

Abstract: A substrate etching apparatus includes: a cassette to receive a substrate that has finished a previous process, and transfer the substrate; a first robot to take the substrate out of the cassette; a second robot to receive the substrate from the first robot and move the substrate mounted thereon vertically up and down; an etching cassette comprising a support to support the substrate and a holder to fix the substrate loaded from the second robot; a cassette fixing unit to fix at least one or more etching cassettes and being rotated at a pre-set angle to allow the substrate to be disposed perpendicular to the ground; and an etching unit to etch the substrate disposed perpendicular to the ground by the cassette fixing unit.

Abstract: A processing liquid supplying apparatus supplies a processing liquid to a process object via a discharging part. In one embodiment, the apparatus includes: a processing liquid source that supplies a processing liquid; an intermediate tank connected to the processing liquid source via a transport line; a feed line provided between the intermediate tank and the discharging part; an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; and a pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line.

Abstract: Described herein are various systems and methods for using acidic media to enhance the surface characteristics of glass articles while reducing the adverse effects of precipitate/sludge formation. The systems and methods generally implement a precipitation-capturing device that is configured to 1) permit formation of sludge thereon and 2) reduce formation of the sludge on other solid surfaces involved in the systems and methods.

Abstract: A reactor assembly having vertically adjustable flow cells is provided. The vertically adjustable flow cells include passageways for distributing a fluid to a reaction region isolated below a bottom surface of corresponding flow cells. The adjustable flow cells enable another dimension of variability for combinatorial processing. Thus, additional data may be gathered for effects on process parameter variations, material variations, process sequence variations, etc., for semiconductor processing operations.

Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided.

Abstract: An etching tray for etching PCD cutting inserts is provided. The etching system includes a tray having a bottom and side walls extending upwardly from the tray bottom and a lid attachable to the top of the tray. The lid may include a funnel formed as an integral part of the lid which has an upper opening disposed above the lid and a lower neck which extends into the tray. The lid may also include an opening for a float to pass through and provide a visual indication of the liquid level in the tray. An etching fixture may be disposed in the tray for etching cutting inserts. The etching fixture has a body which holds a cutting insert to expose the cutting insert for etching.

Abstract: A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.

Abstract: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit 30) which gives a suitable quantity of liquid, etchant to each substrate which is fed one at a time so as to etch the substrate and remove the nitride film, a phosphoric acid regenerating unit (the spin treatment unit 30) which mixes liquid etchant used for treatment of one substrate and a suitable quantity of liquid hydrofluoric acid for the amount of the used liquid etchant under a predetermined temperature environment to regenerate the phosphoric acid, and a phosphoric acid recovery unit (the pump 38, phosphoric acid recovery tank 50, and pump 52) which returns the

Abstract: Disclosed is an adjustable semiconductor processing apparatus and a control method thereof. The apparatus comprises a micro chamber with an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface that are relatively moveable towards each other between an open position and a closed position. When the chamber is in the closed position, a cavity formed by the upper working surface and the lower working surface defines a gap between the upper working surface, the lower working surface and a semiconductor wafer received in the cavity for flow of a processing fluid. A drive device enables the upper working surface of the upper chamber portion or/and the lower working surface of the lower chamber portion to tilt or deform to control flow of chemical agents within the micro chamber.

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: An apparatus and a method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes an electronic device package mountable on the etch head; a conductive electrode in electrical contact with package leads of the electronic device package to apply a first voltage to the package leads of the electronic device; a first pump configured to pump a first quantity of the etchant solution from the source into the etch head where the etchant solution is electrically biased to a second voltage different from the first voltage. An etch cavity is formed on an exterior surface of the electronic device package. When the etchant solution has etched through an exterior surface of the electronic device package, the conductive bond wires of the electronic device is prevented from being etched by the applied first voltage.

Abstract: A substrate processing apparatus of the present invention comprises a cooling mechanism for cooling a processing solution and a filter for removing impurities contained in the processing solution, at some midpoint in a circulation path of the processing solution. With this constitution, the substrate processing apparatus can precipitate the impurities dissolved in the processing solution and remove the precipitated impurities. It therefore becomes possible to maintain the performance of the processing solution and reuse the processing solution. Further, the frequency of changing the processing solution to a new solution decreases, and this causes an increase in availability of the substrate processing apparatus and a decrease in consumption and drainage of the processing solution.

Abstract: An improved design for a closed chamber process module for single wafer wet processing utilizes a combination lid and gas showerhead for sealing the chamber from above. One or more media arms dispense liquid onto a wafer in the chamber. The media arms are mounted inside the chamber but are connected by a linkage that passes through the chamber wall to a drive unit mounted outside the chamber.

Abstract: A process for etching the surfaces of semiconductor substrates utilizes a texturing tank which introduces a process fluid through a circulating system. The process fluid is heated to a desired temperature and maintained at a desired concentration prior to entering a processing area where laminar flow is produced to more quickly and uniformly roughen the surface of semiconductor substrates. The texturing tank permits removal of bubbles and eliminates temperature stratification in the processing area.

Abstract: An apparatus and a method for selectively etching an encapsulant forming a package of resinous material around an electronic device includes an electronic device package mountable on the etch head; a conductive electrode in electrical contact with package leads of the electronic device package to apply a first voltage to the package leads of the electronic device; a first pump configured to pump a first quantity of the etchant solution from the source into the etch head where the etchant solution is electrically biased to a second voltage different from the first voltage and is cooled to a temperature below the ambient temperature. An etch cavity is formed on an exterior surface of the electronic device package. When the etchant solution has etched through an exterior surface of the electronic device package, the conductive bond wires of the electronic device is prevented from being etched by the applied first voltage.

Abstract: The density of a treatment fluid in exhaust gas is reduced, the amount of the treatment fluid that flows into exhausting equipment connected to a substrate treatment apparatus is reduced, and a load on the exhausting equipment is reduced. A substrate treatment apparatus includes: a substrate treating unit that treats a substrate; a treatment fluid supply unit that supplies, to the substrate treating unit, a treatment fluid used to treat the substrate; and an exhaust gas treating unit into which an exhaust gas containing the treatment fluid discharged from the substrate treating unit is introduced. The exhaust gas treating unit includes spray nozzles that spray a solvent toward the exhaust gas, the solvent dissolving the treatment fluid, thereby reducing the density of the treatment fluid in the exhaust gas. The exhaust gas treating unit has porous dispersion plates that cause the exhaust gas to disperse.

Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

Abstract: A shower-type etching apparatus that includes a support member supporting a substrate in an inclined manner, a first spray member arranged at a lower end of the inclined substrate spraying a smaller amount of etching solution onto the substrate than a second spray member arranged at an upper end of the inclined substrate by increasing a pitch distance between adjacent nozzles in the first spray member as compared to the second spray member.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

Abstract: The liquid treatment apparatus according to the present invention includes a substrate holder configured to horizontally hold a substrate, and a top plate configured to be rotatable and to cover the substrate held by the substrate holder from above so as to define a treatment space. In the treatment space, a chemical liquid is supplied by a chemical liquid nozzle onto the substrate, and an atmosphere replacement gas is supplied by a replacement nozzle into the treatment space. The replacement nozzle is supported by a replacement nozzle support arm configured to be horizontally moved between an advanced position at which the replacement nozzle support arm is advanced into the treatment space and a retracted position at which the replacement nozzle support arm is retracted outside from the treatment space. The replacement nozzle is configured to discharge, above the substrate, the atmosphere replacement gas upward.

Abstract: The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated.

Abstract: An etching apparatus includes a receiving container which receives a substrate, and a first spraying unit which supplies etchant into the receiving container. The receiving container includes a bottom plate, a plurality of bottom through holes defined in the bottom plate and through which the etchant is drained from the receiving container; and a plurality of side walls extended from the bottom plate.

Abstract: Stripping structure strips insulation from ends of a plurality of leads of a lead bundle. Each lead includes a conductor member coated with the insulation. The structure includes a housing having wall structure defining a stripping chamber, an inlet in fluid communication with the stripping chamber, and an outlet in fluid communication with the stripping chamber. A cover has an opening for receiving an end of the lead bundle in a sealing manner so that the leads thereof are received in the stripping chamber. Chemical stripping solution is in communication with the inlet. When the lead bundle is received through the opening with the leads in the stripping chamber and when the chemical stripping solution is provided though inlet and in the stripping chamber, the chemical stripping solution strips the insulation from the conductor members, with the stripping solution along with stripped insulation exiting through the outlet.

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract: A film in a dry state is efficiently dissolved and removed. A film removing method includes steps of moving a nozzle head (10B) close to a soluble film (201) formed on a substrate (200), forming a liquid pool (302) of chemical liquid (300) between the nozzle head (10B) and the film (201) by continuously and simultaneously discharging and sucking the chemical liquid (300) from the nozzle head (10B), and horizontally moving the substrate (100) in a state in which the nozzle head (10B) and the surface of the film (201) are not contacted so as to relatively move the liquid pool (302) of the chemical liquid on the substrate (100).

Abstract: An apparatus and method of replacing a liquid of a circulation line in a substrate liquid processing apparatus of a single-wafer type, which can replace the liquid more efficiently, by relating the replacing method with a process-liquid replenishing method. A substrate liquid processing apparatus of a single-wafer type includes: a circulation line through which a process liquid is circulated; a tank disposed in the circulation line; a liquid level sensor disposed in the tank; a liquid replenish part configured to replenish the tank with a new process liquid, based on an output of the liquid level sensor; and a liquid-replacement control part configured to stop the operation of the liquid replenish part based on a predetermined replenish stop condition that is set cooperatively with a predetermined liquid disposal condition, and to discard all the process liquid in the tank based on the predetermined liquid disposal condition.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: Provided is a substrate processing apparatus. The apparatus includes a processing chamber containing a substrate and processing the substrate by using a processing solution and a supplying unit supplying the processing solution to the processing chamber. The supplying unit includes a supply line through which the processing solution is supplied, a preliminary heater installed on the supply line and preliminary heating the processing solution, a main heater installed on the supply line at a lower stream of the preliminary heater and secondarily heating the processing solution, a first detour line connected to the supply line to detour to the preliminary heater and comprising a first valve, a second detour line connected to the supply line to detour the preliminary heater and the main heater or the main heater and comprising a second valve, and a controller controlling the first valve and the second valve.

Abstract: An apparatus and method for liquid treatment of wafer-shaped articles comprises a process unit comprising a chuck for holding a wafer-shaped article in a predetermined orientation, and a liquid recovery system that receives used process liquid recovered from the process unit. The liquid recovery system supplies process liquid to a dispenser in the process unit. A supply of fresh process liquid supplies fresh process liquid to the liquid recovery system and also supplies fresh process liquid to a dispenser in the process unit while bypassing the liquid recovery system.

Abstract: A substrate processing apparatus comprises a substrate holding mechanism, a process liquid supplying mechanism supplying a process liquid, a first guide portion around the substrate holding mechanism having an upper edge portion extending toward the rotation axis for guiding scattered process to flow down, a second guide portion provided around the substrate holding mechanism outside the first guide portion and having an upper edge portion extending toward the rotation axis as vertically overlapping with the upper edge portion of the first guide portion for further guiding the scattered process liquid to flow down, a recovery channel provided outside and integrally with the first guide portion for recovering the process liquid guided by the second guide portion, and a driving mechanism for moving up and down the first guide portion and the second guide portion independently of each other.

Abstract: A processing assembly for a semiconductor workpiece generally includes a rotor assembly capable of spinning a workpiece, a chemistry delivery assembly for delivering chemistry to the workpiece, and a chemistry collection assembly for collecting spent chemistry from the workpiece. The chemistry collection assembly includes a weir assembly surrounding the rotor assembly and having a plurality of weirs. Methods for processing a semiconductor workpiece generally include moving at least one of the rotor assembly and the weir assembly.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated.