Abstract: Silicon wafers are treated with chemicals during the manufacture of integrated circuits according to the method of the invnention in the apparatus of the invention which comprises a process tank for cleaning, rinsing, and/or drying silicon wafers; a first chemical supply vessel suitable for being pressurized, fluidly coupled to the process tank; a chemical flow sensor for electronically monitoring the flow rate of chemical from the first hemical supply vessel; a first chemical flow metering valve for electronically controlling the flow rate of chemical from the first chemical supply vessel; a supply of hot DI water fluidly coupled to the process tank; a hot water metering valve for electronically controlling the flow rate of hot DI water from the supply of the hot DI water; a supply of cold DI water fluidly coupled to the process tank; a cold water metering means for electronically controlling the flow rate of cold DI water from the supply of cold DI water; water flow sensor means for electronically monitorin

Abstract: A developer is supplied onto a substrate and thereafter a rinse discharge nozzle is moved toward an operating direction. The rinse discharge nozzle is so moved on the substrate as to continuously supply pure water onto the substrate from a slit discharge port of the rinse discharge nozzle while sucking and recovering the pure water from the surface of the substrate through a slit suction port, and a series of development is performed in a stationary state of the substrate.

Abstract: A wet chemical process tank, or a wet etch tank, that has improved fluid circulation and improved uniformity in the fluid concentration in the tank is disclosed. In a preferred embodiment, a tank body is provided which has a liquid dispenser positioned therein with a plurality of liquid outlets in a vertical surface of the dispenser each having a different diameter opening for compensating the different fluid pressure in the dispenser. A more uniform liquid concentration is thus achieved in the tank cavity to perform a more uniform chemical process on the plurality of wafers. The tank body is further provided with a second endwall which has a second distance from the plurality of wafers that is at least twice the first distance between a first endwall and the plurality of wafers. When the second endwall is at least 0.

Abstract: The present invention discloses an etching apparatus comprising an etching bath having an etchant; an etchant recycling part in the etching bath; a DI and undiluted etchant supply part for supplying a DI water and a undiluted etchant; an etchant mixing part for mixing the DI water and the undiluted etchant; and an etchant heating part for heating the mixed etchant.

Abstract: The invention provides method of etching and cleaning objects contained in a vessel, including: etching the objects by providing etching solution into the vessel; exiting the etching solution from the vessel by providing pressurized gas into the vessel; cleaning the objects by providing cleaning solution into the vessel; and draining the cleaning solution from the vessel. By exiting the etching with pressurized gas such as nitrogen gas, there is no density difference of the etching solution through out the objects, leading to uniform etching of the objects.

Abstract: A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.