Abstract: The present invention provides a regeneration process of the etching solution for the silicon nitride film, applying phosphoric acid aqueous solution, wherein multiple numbers of filters are connected to the piping path of etching solution extracted from the etching tank by switching alternately in parallel or in series; in both cases that said multiple numbers of filters are connected in parallel or in series, said extracted etching solution being supplied to a filter with a filter element of a high silicon removal rate of silicon compounds with already deposited silicon compounds, thus maintaining a high silicon removal rate of silicon compounds.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

Abstract: Provided is a photoresist (PR) stripping apparatus that enables the recycling of a photoresist stripper and utilizes a continuous filtering action during a filter operation. The PR-stripping apparatus includes a PR stripping tank for receiving a substrate having a PR pattern is disposed and for stripping of the PR pattern, a PR stripper recovery pipe for recovering a PR stripper from the PR stripping tank two or more filter units for filtering the PR stripper returned by the PR striper recovery pipe, and a PR stripper supply pipe for supplying the filtered PR stripper to the PR stripping tank. The two or more filter units are connected in parallel to each other between the PR stripper recovery pipe and the PR stripper supply pipe.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: A wet etching apparatus is disclosed. The apparatus comprises a first tank, containing a first wet etching solution; a filter, having a filter cartridge, connected to the first tank to filter out the impurities in the first solution; a second etching tank, connected to the filter and the first tank in parallel, containing a second solution; a reaction tank, connected to the filter, wherein having a wet etching reaction; an exhaust component, connected to the filter and the reaction tank in parallel; a first pump, delivering the first solution to the reaction tank through the filter; and a second pump, delivering the second solution to the exhaust component to exhaust the solution from the etching tank through the filter.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.

Abstract: A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

Abstract: A method and apparatus for improving an operating efficiency for a process including temperature dependent fluid delivery including determining a projected time period to start a process during a non-operating time period; delivering a process fluid for performing the process along at least one fluid recirculation pathway for at least one selected time period the at least one fluid recirculation pathway including a substantial portion of a fluid delivery pathway for providing the process fluid to the process at a predetermined process temperature; and, providing the process fluid following the at least one selected time period to the process at the predetermined process temperature.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: Providing liquid treatment equipment capable of largely reducing a frequency of discarding a treatment solution as a whole and capable of implementing smooth and high quality liquid treatment with less manufacturing burden. Equipment comprises a treatment solution bath capable of accommodating a treatment solution for implementing liquid treatment to a substrate to treat, a treatment solution circulating system circulating the accommodated treatment solution between the outside of the treatment solution bath, and a product removal unit removing a reaction product due to the liquid treatment contained in the circulated treatment solution. By circulating the accommodated treatment solution between the outside of the treatment solution bath, reaction products contained in the circulated treatment solution are removed by means of the product removal unit.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: An apparatus for supplying chemicals in a chemical mechanical polishing (CMP) process includes a plurality of chemical solution supply sources for supplying different chemical solutions in a pump-less manner by using a pressure applied at the chemical solution supply sources, each supply source having an associated feed line, re-circulating line, and means for measuring and controlling flow rates of the chemical solutions supplied through the feed lines. The chemical solutions are delivered via a plurality of delivery lines to a mixer, thereby providing a mixed chemical solution to a chemical injection part of a polishing apparatus. Each means for measuring and controlling flow rates is mounted in the feed lines.

Abstract: A semiconductor wafer handler comprises a ring (70) attached to a hub (80) by a plurality of spokes (90). Vacuum is applied to the surface of the semiconductor wafer through orifices (100) containing in the ring (70). Water and/or nitrogen can be applied to the surface of the semiconductor wafer through orifices (110) contained in the spokes (90).

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: An apparatus and method for delivering ozone to a workpiece. In one embodiment, fluid is sprayed onto a workpiece placed in an ozone-rich environment. Alternatively, ozone is mixed with the fluid prior to spraying the fluid onto the workpiece. When spraying the fluid, the invention pulses the fluid at desired rates to create a substantially uniform layer of ozone-rich fluid on the workpiece. In another embodiment, the workpiece is also slowly rotated during at least a portion of the time the layer of ozone-rich fluid is applied to the workpiece.

Abstract: The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode, a power generator, a second electrode, at least one confinement ring, and a ground extension surrounding the first electrode. The first electrode is configured to receive a workpiece and has an associated first electrode area. The power generator is operatively coupled to the first electrode, and the power generator is configured to generate RF power that is communicated to the first electrode. The second electrode is disposed at a distance from the first electrode. The second electrode is configured to provide a complete electrical circuit for RF power communicated from the first electrode. Additionally, the second electrode has a second electrode area that is greater than the first electrode area. At least one confinement ring is configured to assist confine the plasma.

Abstract: An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned three-dimensional substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the substrate. In addition, rather than a fixed abrasive, non-abrasive material may be applied to the surface of the patterned substrate, in which case, a conventional slurry may be used in planarization of an applied semiconductor wafer.

Abstract: A wet etch system including a process tank having an inner etch bath chamber and an outer overflow chamber surrounding the etch bath chamber. A frame which is removably mounted on the process tank defines a diversion channel between the upper ends of the etch bath chamber and overflow chamber. The etch bath chamber receives a wafer-containing cassette, which displaces etchant from the etch bath chamber, through the diversion channel and into the overflow chamber, where the etchant is drained from the process tank. Particulate impurities leave the etch bath chamber, enter the overflow chamber and drain from the process tank with the overflow etchant. Fresh etchant is poured into the etch bath chamber prior to a subsequent etch cycle. A water spray loop may be provided in the overflow chamber for removing etch particles from the interior wall surfaces of the overflow chamber.

Abstract: The present invention describes a chemical solution recycling apparatus in a spin etching and cleaning process chamber for manufacturing semiconductor devices. Modification of the exterior dimension and the main structure of the process chamber is not necessary. The recycling apparatus in accordance with the present invention may separate different chemical solutions into different vessels and recycle them thereafter. The recycling apparatus comprises a recycling ring moving up and down to collect the solution and a recycling circular tray for sorting the chemical solutions in different trenches and drains. Therefore, the chemical solutions may be collected by assigned vessels or may be recycled into the process chamber after necessary quality inspections.

Abstract: A substrate (W) is held and rotated in its horizontal position on a spin base (10). A processing liquid can be supplied from a processing liquid lower nozzle 15 to the lower surface of the substrate (W). The upper surface of the substrate (W) is covered with an atmosphere blocking plate (30). A splash guard (50) is disposed so as to circumscribe the substrate (W). A guard (52) is curved such that the vertical cross section of a recovery port (52f) of the splash guard (50) is of substantially U-shape opening to the center of the splash guard (50), so that the maximum internal diameter part of the recovery port (52f) is brought near a guard (53). The space between the internal wall surface of the recovery port (52f) and the substrate (W) is increased to thereby suppress the bounce of the processing liquid flying spattering from the substrate (W) in rotation.

Abstract: A method is described for local etching of surfaces. The method includes the steps of providing a surface, providing an etchant, and providing a device for supplying and extracting the etchant. The device contains two cylindrical lines of different cross-sectional areas, of which the cylindrical line with the smaller cross-sectional area is guided inside the cylindrical line with the larger cross-sectional area. An etchant is fed through the inner line to the region of the semiconductor wafer that is to be etched, and the etchant that spreads out beyond the region of the surface that is to be etched is extracted through the outer line. The cross-sectional area of the outer line is less than or equal to the area of the region of the surface which is to be etched.

Abstract: Resist stripping equipment includes a resist stripping system which includes a plurality of resist stripping chambers provided in a connected row arrangement and a rinse system which includes a rinse chamber. Insides of the resist stripping chambers are purged with nitrogen gas from a nitrogen gas supply system. Mixed gas which is generated in each chamber and contains a water-based resist stripping solution component is sent to a solution recovery/supply system for gas/liquid separation. Recovered resist stripping solution is returned into a stripping solution tank, while separated gas is supplied to a gas knife in each chamber and used for draining solution from a substrate.

Abstract: In a first aspect, a liquid delivery system is provided that includes a first liquid delivery module adapted to store and dispense a first chemical and a second liquid delivery module adapted to store and dispense a second chemical. The liquid delivery system further includes at least one connecting mechanism coupled to the first and second delivery modules and adapted to couple the first and second delivery modules to a substrate processing device. Each delivery module includes a vessel including a first chamber and a second chamber. The vessel is configured to receive a liquid from a bulk supply and to receive a pressurized flow of gas from a gas source. Each liquid delivery module also includes a valve assembly operable to selectively permit fluid communication between the first chamber and the second chamber during a non-refill state and to prevent fluid communication between the first chamber and the second chamber during a refill state.

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing defines a substantially closed processing chamber therein in which one or more processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. A dividing member at the edge of the spinning workpiece separates flow of fluids off of the top and bottom surfaces of the workpiece.

Abstract: A process and system for removing photoresist from semiconductor wafers comprises applying pressure in excess of one atmosphere to ozone, mixing the ozone with ambient temperature or higher deionized water via a sparger plate, and exposing the semiconductor wafers to the mixture of ozone and deionized water. The system is comprised of a tank capable of holding the semiconductor wafers, a sparger plate within the tank, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank. No chiller is included in the system as required by the prior art.

Abstract: An apparatus for etching a glass substrate includes a first bath containing an etchant, at least one porous panel having a plurality of jet holes in the first bath, the porous panel containing the etchant to jet the etchant against the glass substrate, a container storing the etchant, and a pump supplying the etchant from the container to the porous panel, the pump being connected to the container and the porous panel.

Abstract: Deposit is removed by supplying chemical solution on a semiconductor substrate with the semiconductor substrate kept rotating. Next, the chemical solution supply is shut off while rotation of the semiconductor substrate being maintained, which allows to scatter the chemical solution on the semiconductor substrate. Next, water is supplied on the semiconductor substrate with the semiconductor substrate kept rotating. This results in washing the semiconductor substrate. The water supply is shut off while rotation of the semiconductor substrate being maintained, which allows to scatter the water on the semiconductor substrate. Then, these processes are repeated depending on a degree of cleanness on a front face of the semiconductor substrate. In this removing method, the chemical solution and the water are hardly mixed so as to prevent corrosion and elution of a wiring material.

Abstract: A slurry collection device 1 includes a ring-shaped barrier member 2 provided around a turntable T of a polishing machine E and a ring-shaped slurry collection container 3 provided around the barrier member 2. The turntable T is connected to an upper end of a main rotation shaft T1 that sticks out from a bottom portion of a sink S of the polishing machine E and is lifted from the bottom portion of the sink S. The slurry collection device 1 of the present invention is inserted between the turntable T and the sink S.

Abstract: An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supercritical processing module are coupled to the transfer module. The robot is preferably located within the transfer module. In operation, the robot transfers a workpiece from the entrance of the transfer module to the supercritical processing module. After supercritical processing, the robot then transfers workpiece from the supercritical processing module to the non-supercritical processing module. After the non-supercritical processing, the robot returns the workpiece to the entrance of the transfer module. Alternatively, the non-supercritical processing is performed before the supercritical processing.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein pressure in excess of one atmosphere is applied to ozone, followed by a mixing of the ozone with deionized water via a series of nozzles, and finally where the semiconductor wafers having at least one layer of photoresist are exposed to the mixture of ozone and deionized water. The temperature during the process is maintained at above ambient temperatures of 20-21° C. or 70° F.

Abstract: A process and system for removing photoresist from semiconductor wafers comprises applying pressure in excess of one atmosphere to ozone, mixing the ozone with ambient temperature or higher deionized water via a sparger plate, and exposing the semiconductor wafers to the mixture of ozone and deionized water.

Abstract: The apparatus is provided for preparing and/or supplying a slurry for a CMP apparatus in which a device is adopted to avoid drying a slurry thereby eliminating coagulation and solidification of the slurry. A slurry preparation apparatus comprises a tank for preparing and/or supplying the slurry, a humidity sensor located inside the tank, a humidifying air supply device for supplying humidifying air into the tank. Humidity in the tank is measured by the humidity sensor, and the amount of humidifying air to be supplied from the humidifying air supply device is controlled according to the measurements, thereby conditioning inside the tank to a desired humidity.

Abstract: An ultrasonic driver (105) is used to vibrate a filter disk (103) at ultrasonic frequencies. Vibrations are used to break up agglomerates into smaller pieces that pass through filter disk (103). The energy is controlled to minimize the translational energy given to the particles as they are broken up to prevent reagglomeration. The frequency and amplitude of the vibration is controlled to operate out of or in low energy cavitation.

Abstract: A substrate receiving apparatus and a method thereof that prevents substrate damage from occurring when a substrate is loaded/unloaded on/from a cassette. The present invention includes a cassette having a plurality of plates inside so as to receive a plurality of substrates; a cassette loading unit uploading/downloading the cassette; a port supporting the cassette loading unit; and a plurality of auxiliary plates inserted inside the cassette from outside. The method includes downloading a cassette so as to move substrates from plates of the cassette to auxiliary plates, unloading and loading the substrates placed on the auxiliary plates from/on the cassette, and uploading the cassette so as to move the substrates from the auxiliary plates to the plates of the cassette.

Abstract: Disclosed are an apparatus for etching or stripping a substrate of a liquid crystal display device and a method thereof. The present invention includes carrying out an etching or stripping process on substrates using an etchant in a first etchant tank, counting a number of the substrates etched or stripped using the etchant in the first etchant tank, checking readiness of a second etchant tank at a predetermined point in time before the counted number reaches a maximum substrate number set up previously for the etchant tanks, and carrying out the etching or stripping process on the substrates using an etchant in the second etchant tank when the second etchant tank is in readiness for use and the counted number reaches the maximum substrate number.

Abstract: The present invention generally provides an improved apparatus and method for removing an edge bead from a substrate. The apparatus includes a processing chamber having an edge bead removal fluid distribution system positioned therein and a substrate support member positioned in the processing chamber proximate the fluid distribution system. The substrate support member generally includes an upper substrate support surface having a plurality of fluid dispensing apertures formed therein, at least three capillary ring support posts radially positioned about a perimeter of the upper substrate support surface, and a annular capillary ring having a planar upper surface rigidly mounted to the capillary ring support posts.

Abstract: The present invention provides an apparatus for removing an edge bead from a substrate. The apparatus includes a substrate support member, a plurality of mounting posts positioned along a perimeter of the substrate support member, and a rigid annular capillary ring mounted to the plurality of mounting posts. The rigid annular capillary ring includes a substantially planar upper capillary surface and is configured to maintain the substantially planar capillary surface when attached to the mounting posts.

Abstract: An annular receptacle is described, particularly for a rotating carrier for receiving a disk-shaped object such as a semiconductor.

Abstract: The present invention describes a chemical solution recycling apparatus in a spin etching and cleaning process chamber for manufacturing semiconductor devices. Modification of the exterior dimension and the main structure of the process chamber is not necessary. The recycling apparatus in accordance with the present invention may separate different chemical solutions into different vessels and recycle them thereafter. The recycling apparatus comprises a recycling ring moving up and down to collect the solution and a recycling circular tray for sorting the chemical solutions in different trenches and drains. Therefore, the chemical solutions may be collected by assigned vessels or recycled into the process chamber after necessary quality inspections.

Abstract: An apparatus and associated method for removing deposits from a substrate. In one aspect, a system is provided which supplies etchant to an edge bead removal chamber. The apparatus includes an etchant delivery system, an etchant tank, a sensor, and a mixing tank.

Abstract: The invention encompasses polishing systems for polishing semiconductive material substrates, and encompasses methods of cleaning polishing slurry from semiconductive substrate surfaces. In one aspect, the invention includes a method of cleaning a polishing slurry from a substrate surface comprising: a) providing a substrate surface having a polishing slurry in contact therewith; b) providing a liquid; c) injecting a gas into the liquid to increase a total dissolved gas concentration in the liquid; and d) after the injecting, providing the liquid against the substrate surface to displace the polishing slurry from the substrate surface.

Abstract: A system for conditioning an alkaline etching solution for reducing contamination in a silicon wafer etching process. The system includes a conditioning tank for mixing a conditioned alkaline etching solution, the conditioned alkaline etching solution including a conditioning chemical; a conditioning chemical introduction system configured to add the conditioning chemical to the conditioning tank; and a buffer tank for storing the conditioned basic etching solution before using the conditioned alkaline etching solution in an etching process.

Abstract: A method of manufacturing electronic devices, in particular, but not exclusively, semiconductor devices, and apparatus for carrying out such a method, in which method substrates 1, which are provided at a surface 2 with a silicon oxide-containing material 3 to be removed, are subjected, while being divided into successive batches, to a wet treatment in a bath 4 containing a solution 5 of hydrofluoric acid in water. During this wet treatment the conductivity of the solution 5 is monitored and the silicon oxide-containing material 3 is removed, thereby forming ionic components. The monitored conductivity is brought to approximately a desired conductivity at time intervals by adding hydrofluoric acid and/or water to the solution 5 inside the bath 4.

Abstract: A device for etching the backside of a wafer is disclosed. The etching device directly feeds an etchant to a target wafer without using any medium, such as a conventional absorption fabric, thus uniformly etching the backside of the wafer, and prevents the wafer from coming into contact with the etchant during the removal of the wafer from the device, thus almost completely protecting the wafer from any damage. This etching device consists of a cylindrical housing having a conical bottom wall, and an annular etching dam seated in the housing while forming an etchant collecting chamber and an etching bath. An etchant supply unit is provided on the conical bottom wall of the housing. At least one first etchant discharging part communicates the etching bath with the collecting chamber, while at least one second etchant discharging part communicates the etchant collecting chamber with the outside.

Abstract: A tank is set up to hold a precise volume of acid by first adjusting an overflow pipe to establish a volume that is larger than the desired volume and then adjusting the vertical position of a volume occupying element that extends above and below the surface of the acid. The apparatus includes a drain pipe for directing the acid to a tank that holds deionized water that the acid is mixed with. The bath is used for etching a silicon dioxide layer on a semiconductor wafer.