Abstract: A support structure removal system comprising a vessel and a second component. The vessel comprises a vessel body, a porous floor configured to retain a three-dimensional part, and an impeller rotatably mounted below the porous floor. The second component comprises a surface configured to operably receive the vessel, and a rotation-inducing assembly located below the surface, where the rotation-inducing assembly is configured to rotate the impeller with magnetic fields when the vessel is received on the surface of the second component to agitate and direct flows of an aqueous fluid through the porous floor.

Abstract: An apparatus for forming selectively coated areas on a substrate comprises an extrudate remover configured to selectively remove coating from a selected portion of the substrate. A chuck is configured to secure the substrate. A coating die is arranged proximal the substrate and is in fluid communication with a source of fluid extrudate. During relative motion between the substrate and the coating die, fluid extrudate is deposited onto the substrate. A controller is configured to selectively control the relative motion between the substrate and coating remover, and to control operation of the extrudate remover. The invention also provides a method of forming selectively coated areas on a substrate comprising the steps of inducing relative movement between a coating dispenser and the substrate, applying fluid material from the coating dispenser onto the substrate during the relative movement, and selectively removing a portion of the applied fluid from the substrate.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated.

Abstract: A substrate chucking member includes a substrate supporting member and a rotation adjustment unit. The supporting member includes a rotatable supporting plate to load a substrate, and chucking pins disposed at the supporting plate for spacing the substrate off the top of the supporting plate by supporting the edge of the substrate from a side of the substrate. Each of the chucking pins is rotatable for rotating the substrate supported on the chucking pins. The rotation adjustment unit is disposed under the supporting plate for adjusting rotation of the chucking pins. During a process, since a substrate is rotated by the chucking pins to vary points of the substrate making contact with the chucking pins, positions of the substrate where a process liquid falls after colliding with the chucking pins can be continuously varied. Therefore, the substrate can be processed without defects at an end part of the substrate.

Abstract: A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed.

Abstract: The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.

Abstract: In an apparatus and method for treating a wafer-shaped article, a spin chuck is provided for holding a wafer-shaped article in a predetermined orientation wherein a lower surface of the wafer-shaped article is spaced a predetermined distance from an upper surface of the spin chuck. A heating assembly comprising at least one infrared heater is mounted above the upper surface of the spin chuck and below a wafer-shaped article when mounted on the spin chuck. The heating assembly is stationary in relation to rotation of the spin chuck.

Abstract: A wet etching apparatus and a wet etching method for etching a glass substrate are disclosed. The wet etching apparatus comprises a driving device, a supporting stage, a vibrating device and a substrate fixing rack. The glass substrate is fixed at the top of the substrate fixing rack and a bottom portion of the substrate fixing rack is connected with the vibrating device; the vibrating device is fixed on the supporting stage to drive the substrate fixing rack to reciprocate; and the supporting stage is disposed on the driving device and moves along with the driving device. According to the present disclosure, by controlling the vibrating device to drive the glass substrate to reciprocate in a direction where it is desired to accelerate the etching speed, the probability that the etched material interacts with the etching solution can be enhanced to increase the side etching rate.

Abstract: Provided is a spin head. Chuck pins, installed at a support plate to support the lateral surface of a substrate, are moved along the perpendicular direction to the radial direction of the support plate. The effect of centrifugal force applied to the chuck pins during the rotation of the support plate is minimized to support a substrate stably.

Abstract: A method and device for wet treatment of a plate-like article comprises a spin chuck for holding and rotating the plate-like article. Gas supply nozzles open on a surface of the spin chuck facing a first side of the plate-like article. The spin chuck is configured to direct gas discharged from the gas supply nozzles radially outwardly through a gap defined between an upper surface of the spin chuck and a downwardly facing surface of a plate-like article positioned on the spin chuck. Liquid supply nozzles open on the surface of the spin chuck facing a first side of the plate-like article and positioned radially outwardly of the gas supply nozzles. The liquid supply nozzles are positioned beneath a peripheral region of a plate-like article positioned on the spin chuck.

Abstract: A substrate edge bevel etch module for etching a material from a peripheral edge of a substrate with an etchant is described. The substrate edge bevel etch module includes a rotatable substrate holder having a support for a substrate, and a surface tension etch applicator comprising a wetted etching surface opposing a substrate surface proximate an edge of the substrate when the surface tension etch applicator is located proximate to the edge of the substrate. The surface tension etch applicator further includes an etchant dispensing portion, proximate the wetted etching surface, which dispenses an etchant in a region between the wetted etching surface and the substrate surface and wet at least a portion of the wetted etching surface and the substrate surface. A spacing between the wetted etching surface and the substrate surface is selected to retain the etchant using surface tension forces and form a meniscus there between.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber, a chuck located within the closed process chamber, and at least one process liquid dispensing device disposed within the chamber. The closed process chamber comprises a lid that can be opened to position a wafer-shaped article within the closed process chamber. The lid incorporates a heater adapted to heat a wafer-shaped article positioned in the closed process chamber.

Abstract: A substrate liquid processing apparatus includes a substrate rotation unit configured to hold and rotate a substrate within a processing space; a processing solution supply unit configured to selectively supply multiple kinds of processing solutions; a collection cup configured to collect the processing solutions; liquid collection regions formed at the collection cup and configured to collect the processing solutions; a liquid drain opening formed at a bottom portion of the collection cup and configured to discharge the processing solutions; an exhaust opening formed above the liquid drain opening; a fixed cover configured to cover an upper portion of the exhaust opening with a space therebetween; an elevating cup provided above the fixed cover and configured to guide the processing solutions into the liquid collection regions; and a cup elevating unit configured to move up and down the elevating cup depending on the kinds of the processing solutions.

Abstract: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

Abstract: Apparatus and methods for diagnosing status of a consumable part of a plasma reaction chamber, the consumable part including at least one conductive element embedded therein. The method includes the steps of: coupling the conductive element to a power supply so that a bias potential relative to the ground is applied to the conductive element; exposing the consumable part to plasma erosion until the conductive element draws a current from the plasma upon exposure of the conductive element to the plasma; measuring the current; and evaluating a degree of erosion of the consumable part due to the plasma based on the measured current.

Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

Abstract: A non-polished glass wafer, a thinning system, and a method for using the non-polished glass wafer to thin a semiconductor wafer are described herein. In one embodiment, the glass wafer has a body (e.g., circular body) including a non-polished first surface and a non-polished second surface substantially parallel to each other. In addition, the circular body has a wafer quality index which is equal to a total thickness variation in micrometers plus one-tenth of a warp in micrometers that is less than 6.0.

Abstract: A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

Abstract: A substrate etching apparatus includes a supporting unit for supporting substrate in a vertical position and an etching solution supply unit disposed above the substrate to supply an etching solution to the top of the substrate such that the etching solution runs down both of faces of the substrate from the top of the substrate.

Abstract: Provided is a spin head for supporting and rotating a substrate. The spin head includes a body, chuck pins disposed at the body and movable between supporting positions and rest positions, and a chuck pin moving unit configured to move the chuck pins straight. The chuck pins supports a substrate at the supporting positions and provides a substrate loading/unloading space at the rest position. The chuck pin moving unit includes movable rods fixed to the chuck pins, a rotatable cam including protrusions on an outer surface thereof so as to move the chuck pins from the supporting positions to the rest positions, and chuck pin return units respectively applying forces to the movable rods so as to move the chuck pins individually from the rest positions to the supporting positions. The chuck pin moving unit further includes contact maintaining members.

Abstract: A substrate etching apparatus includes: a cassette to receive a substrate that has finished a previous process, and transfer the substrate; a first robot to take the substrate out of the cassette; a second robot to receive the substrate from the first robot and move the substrate mounted thereon vertically up and down; an etching cassette comprising a support to support the substrate and a holder to fix the substrate loaded from the second robot; a cassette fixing unit to fix at least one or more etching cassettes and being rotated at a pre-set angle to allow the substrate to be disposed perpendicular to the ground; and an etching unit to etch the substrate disposed perpendicular to the ground by the cassette fixing unit.

Abstract: Implementations and techniques for conforming a layer of graphene to a target substrate are generally disclosed.

Abstract: In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

Abstract: According to certain embodiments, a resist is placed over the surface of a semiconductor structure, wherein the resist covers a portion of the semiconductor structure. Dopants are implanted into the semiconductor structure using an ion implantation beam in regions of the semiconductor structure not covered by the resist. Due to exposure to the ion implantation beam, at least a portion of the resist is converted by exposure to the ion beam to contain an inorganic carbonized material. The semiconductor structure with resist is contacted with a superacid composition containing a superacid species to remove the resist containing inorganic carbonized materials from the semiconductor structure.

Abstract: A substrate processing apparatus includes a substrate holding and rotating mechanism for holding and rotating a substrate; a positioning member disposed on the substrate holding and rotating mechanism for positioning a substrate at a predetermined substrate holding position; a substrate transfer mechanism for transferring a substrate to the substrate holding and rotating mechanism; and a pressing unit disposed on the substrate transfer mechanism for pressing a substrate toward the positioning member.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: Provided is a spin head for supporting a substrate. The spin head includes a rotatable body, and chuck pins protruding upward from the body and configured to support an edge of a substrate placed at the body when the body is rotated. Each of the chuck pins includes a vertical rod vertically disposed at the body, and a support rod extending from a side of the vertical rod and configured to make contact with the edge of the substrate placed at the body when the body is rotated. When the substrate is rotated, the vertical rod is spaced apart from the edge of the substrate. The contact portion includes a streamlined side surface. The support rod includes a contact portion. The contact portion tapers toward the end of the support rod when viewed from the top of the support rod.

Abstract: A surface activation device comprises a holding compartment, a nozzle support, and a sealing assembly. The holding compartment defines a receiving chamber and defining a plurality of recesses for holding workpieces therein. The nozzle support is rotatably received in the receiving chamber and comprises an outer barrel, an inner barrel is received in the outer barrel, and at least one ultraviolet (UV) lamp is embedded in the outer barrel. The outer barrel and the inner barrel cooperatively define a first chamber therebetween, and the inner barrel defines a second chamber therein. The sealing assembly seals the first chamber and the second chamber, and comprises at least one first inlet tube communicated with the first chamber and at least one second inlet tube communicated with the second chamber.

Abstract: An apparatus and method for etching a portion of a wafer include a mount for holding a wafer having an edge, a front surface, a back surface and an axis perpendicular to the front and back surfaces. A frame is used to deliver an etchant to the wafer edge while the wafer is held with the wafer edge at a distance from the frame. A nonreactive fluid flow may be provided and directed along the front and back surfaces of the wafer edge to drive the etchant away from the front and back surfaces. The frame can be configured either to deliver the etchant in liquid form or to deliver the etchant in vapor form. The frame can include a plenum for directing the etchant in vapor form to the wafer edge within a receiving area of the plenum, or the frame can include a roller having a groove for receiving the wafer edge and for drawing the etchant in liquid form to the wafer edge.

Abstract: An apparatus for etching a glass substrate includes a vessel configured to contain an etchant; a first plate in the vessel and configured to receive a horizontally placed glass substrate thereon; and a circulating unit in the vessel facing the first plate and configured to create a flow of the etchant on a side of the first plate.

Abstract: An improved design for a closed chamber process module for single wafer wet processing utilizes a combination lid and gas showerhead for sealing the chamber from above. One or more media arms dispense liquid onto a wafer in the chamber. The media arms are mounted inside the chamber but are connected by a linkage that passes through the chamber wall to a drive unit mounted outside the chamber.

Abstract: Disclosed is a liquid processing apparatus that includes: a rotational unit configured to rotate a substrate to be processed while the substrate is being held horizontally; and a processing liquid supplying unit configured to supply a processing liquid to the bottom surface of the substrate to be processed which is rotating. The rotational unit includes an enclosing member surrounding the periphery of the substrate to be processed, the enclosing member includes a plurality of guide grooves formed on the bottom surface of the enclosing member and configured to guide the processing liquid, and each of the plurality of guide grooves elongates outwardly from the inner periphery and is arranged in the circumferential direction of the enclosing member.

Abstract: A plurality of substrate processing devices are disposed in a separated manner within a shared ambient environment. A conveyance device is disposed within the shared ambient environment and is defined to move a substrate through and between each of the substrate processing devices in a continuous manner. Some substrate processing devices are defined to perform dry substrate processing operations in which an energized reactive environment is created in exposure to the substrate in an absence of liquid material. Some substrate processing devices are defined to perform wet substrate processing operations in which at least one material in a liquid state is applied to the substrate. In one embodiment, a complementary pair of dry and wet substrate processing devices are disposed in the shared ambient environment in a sequential manner relative to movement of the substrate by the conveyance device.

Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

Abstract: Phosphoric acid, sulfuric acid, and water are supplied to a flow path for a processing liquid from a first tank to a substrate held by a substrate holding unit. As a result, a mixed liquid containing the phosphoric acid, the sulfuric acid, and the water is generated. A liquid containing the sulfuric acid and a liquid containing the water are mixed together in the flow path, and the temperature of the mixed liquid containing the phosphoric acid, the sulfuric acid, and the water rises. A mixed liquid containing a phosphoric acid aqueous solution whose temperature is close to its boiling point is supplied to the substrate held by the substrate holding unit.

Abstract: Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate.

Abstract: Provided are a substrate supporting unit and a substrate treating apparatus using the substrate supporting unit. The substrate supporting unit comprises a base plate and a supporting portion formed on the base plate. The supporting portion comprises two supporting rods and a plurality of supporting members. The two supporting rods extend in a predetermined direction to be separated from each other. The plurality of supporting members is disposed to be separated from each other in the predetermined direction. Each of the supporting members connects the supporting rods.

Abstract: The wafer processing apparatus 100 included in an etching apparatus selectively etches the peripheral portion of a wafer 200. The wafer processing apparatus 100 includes a lower electrode 112 as a stage on which the wafer 200 is placed, a process gas introducing duct 120 supplying therethgouh a process gas etching the peripheral portion, an etching-interfering gas introducing duct 118 supplying therethrough an etching-interfering gas interfering supply of the process gas to the center portion of the wafer, and a movable alignment mechanism 102 aligning the wafer on the lower electrode 112. The etching-interfering gas introducing duct 118 and the process gas introducing duct 120 can be provided in an upper electrode 106.

Abstract: An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: Method and device for wet treating a defined peripheral edge-region of a wafer-shaped article having a first surface plane W1, a second surface plane W2 and an edge surface. The device includes a support for holding the wafer-shaped article; liquid dispensing members for dispensing liquid onto the first surface plane W1 of the wafer-shaped article not facing the support and liquid guiding member connected to the support for guiding at least a part of the liquid around the edge surface of the wafer-shaped article towards the second surface plane W2 of the wafer-shaped article facing the support thereby wetting at least the edge surface, wherein the liquid guiding member has the form of a ring.

Abstract: The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.

Abstract: A method and a system are described herein for applying etchant to edges of a plurality of wafers. The system includes a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller. The cassette permits axial rotation of the wafers about an axis. A method of applying etchant to the edge of the wafer includes placing the wafer edge in contact with the roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contact an etchant contained in a sump during rotation so that etchant is applied to the wafer edge.

Abstract: A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

Abstract: A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102. The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.

Abstract: A device for fabricating a mask by plasma etching a semiconductor substrate comprises a semiconductor substrate part of the area whereof is partially covered by a mask for protecting at least one area that must not be etched and for exposing at least one area including a pattern to be etched, a support for the substrate and means for generating a plasma in the form of a flow of ions toward the substrate. According to the invention the device further comprises means for confining the ions, including a conductive material screen disposed over the substrate and along the limit between the pattern area to be etched and the area not to be etched.

Abstract: An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a yoke comprising a curved surface with a first slot formed therethrough, a base comprising a first surface adapted to support the substrate support and a curved second surface, wherein the curved second surface mates with the curved surface of the yoke and a first slot is formed through the curved second surface of the base, and a first threaded member disposed through the first slot in the yoke and the first slot in the base.

Abstract: In a substrate supporting apparatus of a surface potential measuring apparatus, a first fluid is ejected around a target region on an upper surface of a substrate from a circular-shaped first porous member of a first fluid ejection part and a second fluid is ejected onto a lower surface of the substrate from a circular-shaped second porous member of a second fluid ejection part which is opposite to the first fluid ejection part. The substrate can be supported and flattened between the first fluid ejection part and the second fluid ejection part. Also, it is possible to keep the distance between the substrate and the first porous member, with a simple construction. As a result, a probe can be positioned above a flatted target region with leaving a predetermined spacing, to perform measurement of a surface potential of the target region on the substrate with high accuracy.

Abstract: In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.