Abstract: Disclosed herein are an apparatus and method for manufacturing a flat panel display device. The apparatus and method for manufacturing a flat panel display device contribute to a compact apparatus for etching a substrate and damage or breakage prevention of the substrate during the transfer of the substrate by virtue of stoppers. The etching apparatus comprises a loader for loading or unloading a substrate, an etching device for etching the substrate into a desired shape, a DI rinsing device for rinsing fine particles and etchant generated during the etching process from the etched substrate, an air knife for drying the rinsed substrate, and one or more turn stages provided at one or more locations between the above respective devices, and adapted to change a transfer direction of the substrate.

Abstract: Disclosed is an apparatus for wet treatment of a disc-like article, which comprises: a spin chuck for holding and rotating the disc-like article, and an inner edge nozzle dispensing treatment liquid directed towards a first peripheral region of the first surface of the disc-like article, wherein the first surface is facing the spin chuck and the first peripheral region is defined as being a region of the first surface with an inner radius (ri), which is greater than 1 cm less than the disc-like article's radius (ra), wherein the inner edge nozzle is positioned in a stationary manner between the disc-like article (when placed on the spin chuck) and the spin chuck, wherein the inner edge nozzle is feed through a central pipe, which is disposed in a stationary manner and penetrates centrally through the spin chuck, for supplying a treatment liquid against a first surface of the disc-like article.

Abstract: On a hot plate, jigs and wafers are joined by bonding wax. A first transport mechanism, a posture change mechanism, a pusher and a second transport mechanism transport the jigs joined with the wafers from the hot plate to a treating transport mechanism. The treating transport mechanism immerses the jigs joined with the wafers in a treating solution stored in a treating tank. Thus, the wafers may be thinned, or otherwise treated, without a turn table directly contacting and damaging the wafers as in the prior art.

Abstract: An object is to improve the cleanness achieved by washing through effectively suppressing the residual of solvent remained on a wash-target after washing. The present invention is a wash-target holder soaked in a wash tank by holding a wash-target, which comprises a tray for placing the wash-target, a surrounding member, which is provided standing up on a wash-target placing face of the tray, for surrounding the periphery, and a defluxion-restricting member for restricting the defluxion of the wash-target from the tray. In the periphery of the wash-target surrounded by the surrounding member, an opening for letting in and out the solvent used for washing the wash-target is formed.

Abstract: A cassette capable of preventing breakage in glass substrates includes lower and upper frames; side frames between the lower and upper frames for connecting the lower and upper frames to each other, the side frames having a plurality of insertion recesses for receiving glass substrates; and a stopper at the rear of the cassette for preventing the glass substrates from exiting a rear portion of the cassette, wherein the stopper formed with a buffer covering material.

Abstract: A novel semiconductor wafer lifter is disclosed for handling wafers during wet bench processing. In particular, the lifter has a plurality of holes formed in its vertical support surface to allow cleaning or rinsing fluid to flow through the vertical support instead of around its sides. These holes facilitates a constant flow of fluid across the wafer during recirculation of the tank contents during etching and rinsing operations, thus ensuring more even etching of all wafers and minimizing the deposition of particulate matter on wafer surfaces.

Abstract: A substrate chucking member includes a substrate supporting member and a rotation adjustment unit. The supporting member includes a rotatable supporting plate to load a substrate, and chucking pins disposed at the supporting plate for spacing the substrate off the top of the supporting plate by supporting the edge of the substrate from a side of the substrate. Each of the chucking pins is rotatable for rotating the substrate supported on the chucking pins. The rotation adjustment unit is disposed under the supporting plate for adjusting rotation of the chucking pins. During a process, since a substrate is rotated by the chucking pins to vary points of the substrate making contact with the chucking pins, positions of the substrate where a process liquid falls after colliding with the chucking pins can be continuously varied. Therefore, the substrate can be processed without defects at an end part of the substrate.

Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: The substrate processing apparatus is capable of highly efficiently feeding and carrying out work and improving production efficiency. The substrate processing apparatus comprises: a processing chamber including a processing stage; a first load lock chamber for feeding the work, the first load lock chamber being communicated to the processing chamber; a second load lock chamber for carrying out the work, the second load lock chamber being communicated to the processing chamber; a first buffer storage being located between the processing chamber and the first load lock chamber, the first buffer storage storing the work to be transferred therebetween; and a second buffer storage being located between the processing chamber and the second load lock chamber, the second buffer storage storing the work to be transferred therebetween.

Abstract: An apparatus for etching a semiconductor wafer of the present invention includes a cylindrical inner bath 1 which stores an etchant, a blow-off nozzle 13 which supplies the etchant from a middle part of a bottom surface 7 of the inner bath 1 toward a middle part of a liquid surface of the etchant, a Bernoulli chuck 41 which holds one surface of the semiconductor wafer W in a noncontact manner, and raising and lowering means 51 which is capable of descending, while keeping the semiconductor wafer W horizontal, to a set height at which the other surface of the semiconductor wafer W to be etched comes into contact with the liquid surface. The inner bath 1 is formed in such a manner that the outside diameter of the inner bath 1 is not more than the outside diameter of the semiconductor wafer W. As a result of this, it is possible to prevent the splash of the etchant when one surface of the wafer is etched, with the wafer held by use of the Bernoulli chuck.

Abstract: A substrate etching apparatus includes a supporting unit for supporting substrate in a vertical position and an etching solution supply unit disposed above the substrate to supply an etching solution to the top of the substrate such that the etching solution runs down both of faces of the substrate from the top of the substrate.

Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 ?m to about 10 ?m on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 ?m to about 8 ?m on the substrate.

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Abstract: A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract: The substrate treatment apparatus according to the present invention includes a substrate holding mechanism including a support member which supports a substrate, and an extension surface which laterally surrounds one major surface of the substrate supported by the support member and extends continuously to the major surface of the substrate, a rotation mechanism which rotates the substrate holding mechanism, and an etching liquid supply mechanism which supplies an etching liquid onto the major surface of the substrate held by the substrate holding mechanism.

Abstract: The invention relates to an arrangement of electronic semiconductor components on a carrier system for treating the semiconductor components with a liquid medium. A semiconductor component is detachably mounted on the carrier system with the active side thereof in such a way that the arrangement comprises a gap at least in the edge region and partially between the semiconductor components and the carrier system. The aim of the invention is to provide a detachable arrangement of electronic semiconductor components on a mechanically stable carrier system for safely handling the semiconductor components during the production process, wherein the capillarity of the gap between the semiconductor components and the carrier system is reduced in a controlled manner, thus preventing the damaging effect of a liquid medium seeping into the gap. To this end, the surface of the carrier system is shaped in such a way that the gap is widened along the entire edge region thereof.

Abstract: A bipolar electrostatic including a chuck main body having a mounting surface; an annular electrode member formed in an annular configuration wit a center opening and fixed onto the mounting surface of the chuck main body though an adhesive layer; an inner electrode member disposed at a given clearance from the annular electrode member within the center opening of the annular electrode member and fixed onto the mounting surface through the adhesive layer; and an outer electrode member disposed at a given clearance from the annular electrode member outside of the annular electrode member and fixed onto the mounting surface through the adhesive layer.

Abstract: In one aspect, a roll-to-roll substrate transfer apparatus is provided that includes: a feed roll and a take-up roll between which a printed circuit board substrate extends; and a plurality of drive roller rows transmitting motive power to the substrate for moving the substrate in a transferring direction, each drive roller row of the plurality includes a roller axis arranged in a direction perpendicular to the transferring direction of the substrate, and a plurality of spaced-apart drive rollers on the roller axis, wherein drive rollers of one drive roller row are arranged in spaces between drive rollers of adjacent drive roller rows. In other aspects, a wet etching apparatus and an apparatus for manufacturing a printed circuit board that include the roll-to-roll substrate transfer apparatus are provided.

Abstract: Provided are a substrate supporting unit and a substrate treating apparatus using the substrate supporting unit. The substrate supporting unit comprises a base plate and a supporting portion formed on the base plate. The supporting portion comprises two supporting rods and a plurality of supporting members. The two supporting rods extend in a predetermined direction to be separated from each other. The plurality of supporting members is disposed to be separated from each other in the predetermined direction. Each of the supporting members connects the supporting rods.

Abstract: A fine pattern is formed on a surface of a processing object without using photoresist. A wet etching for the processing object in an area to which ultraviolet light is applied is performed by bringing a solution in which nitrous oxide (N2O) is dissolved into contact with the processing object and applying the ultraviolet light to the solution in a vicinity of an area to the processing object other than portions shielded with a mask whereupon a light shielding pattern is formed.

Abstract: In one embodiment, a substrate centering apparatus for centering a substrate on a substrate support is provided. In one embodiment, the invention comprises an apparatus that is mounted to an underside of a substrate support and includes a lever that projects upward through a support surface of the substrate support. The lever may be biased toward a center of the substrate support to contact an edge of a substrate. A mechanism is coupled to the lever and moves the lever radially outward to release the substrate. In one embodiment, the mechanism is actuated as the substrate support moves downward to a position that facilitates substrate handoff.

Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

Abstract: A method of processing a semiconductor substrate (3) comprises spinning the semiconductor substrate (3) while dispensing a reactive etching agent (7) onto a first surface of the spinning substrate (3) to etch a first region (8) of the surface (3). Simultaneously, a neutralising agent (9) is dispensed onto the first surface to neutralise etching agent (9) that has flowed away from the first region (8) of the surface (3), thereby substantially preventing processing of another region (10) of the first surface located nearer an edge of the substrate (3) than is the first region (8). The processing may be etching.

Abstract: Provided is a spin head for supporting and rotating a substrate. The spin head includes a body, chuck pins disposed at the body and movable between supporting positions and rest positions, and a chuck pin moving unit configured to move the chuck pins straight. The chuck pins supports a substrate at the supporting positions and provides a substrate loading/unloading space at the rest position. The chuck pin moving unit includes movable rods fixed to the chuck pins, a rotatable cam including protrusions on an outer surface thereof so as to move the chuck pins from the supporting positions to the rest positions, and chuck pin return units respectively applying forces to the movable rods so as to move the chuck pins individually from the rest positions to the supporting positions. The chuck pin moving unit further includes contact maintaining members.

Abstract: Provided is a spin head for supporting a substrate. The spin head includes a rotatable body, and chuck pins protruding upward from the body and configured to support an edge of a substrate placed at the body when the body is rotated. Each of the chuck pins includes a vertical rod vertically disposed at the body, and a support rod extending from a side of the vertical rod and configured to make contact with the edge of the substrate placed at the body when the body is rotated. When the substrate is rotated, the vertical rod is spaced apart from the edge of the substrate. The contact portion includes a streamlined side surface. The support rod includes a contact portion. The contact portion tapers toward the end of the support rod when viewed from the top of the support rod.

Abstract: After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.

Abstract: In a nozzle assembly for supplying processing solutions, the nozzle assembly includes a housing, a plurality of supply units arranged in the housing and through which different processing solutions flow onto the substrate, and a plurality of nozzles connected to the supply units, respectively, in such a configuration that a first nozzle selected from the nozzles is directed to the substrate and the remaining nozzles excluding the first nozzle are directed away from the substrate. Accordingly, the mechanical structure of the nozzle assembly may be simplified and the nozzles directed away from the substrate may be prevented from being contaminated by the processing solutions that are injected onto the substrate through the nozzle directed to the substrate.

Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

Abstract: A substrate cleaning apparatus 40 includes: a cleaning tank 70; a holding table 51 rotatably disposed in the cleaning tank 70, for holding a substrate to be processed W; and a rotary drive mechanism 52 for rotating the holding table 51. A chemical liquid storing unit 53 is disposed at a part circumferentially outward of the holding table 51, for storing a chemical liquid along a peripheral part of the substrate to be processed W held by the holding table 51, so as to immerse the peripheral part of the substrate to be processed W in the chemical liquid. A chemical liquid supply unit 54 is connected to the chemical liquid storing unit 53, for supplying a chemical liquid to the chemical liquid storing unit 53. Further, there is disposed a brush 55d for brushing the peripheral part of the substrate to be processed held by the holding table 51.

Abstract: The present invention provides a single wafer processor structured such that similar immersion treatment to the conventional immersion treatment can be performed in the spin treatment, that a consumption of the chemical solutions can be reduced in the chemical solution treatment per wafer, that energy saving can be realized by using reaction heat of the chemical solutions to eliminate a necessity of a heating heater, that a problem of deterioration of the chemical solutions can be eliminated since the blending of the chemical solutions is implemented on the rotary disk part and the chemical solutions are used immediately thereafter, and that the maximum effective point of the chemical solutions can be utilized.

Abstract: In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

Abstract: A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

Abstract: An apparatus and method used to selectively etch materials from the edge and bevel areas of a silicon wafer are provided. In one configuration, a bevel etch spin chuck, for use in a device for removing unwanted material from an edge and bevel area of a wafer, includes a fluid channel, a separation barrier, and a gas channel that are substantially circular and concentric. A fluid, such as an etching solution, is provided to the fluid channel and contacts one or more areas at the edge and bevel area of the wafer. A stream of continuously flowing gas, such as nitrogen, is provided to the gas channel and purges an active side of the wafer.

Abstract: A substrate processing apparatus that can prevent a heat transfer sheet from becoming attached to a focus ring mounting surface of a substrate mounting stage. The substrate mounting stage is disposed in a housing chamber of the substrate processing apparatus, and a substrate is mounted on the substrate mounting stage. A focus ring that surrounds a peripheral portion of the mounted substrate is mounted on the focus ring mounting surface. The heat transfer sheet is interposed between the focus ring and the focus ring mounting surface, and a fluorine coating is formed on the focus ring mounting surface.

Abstract: Method and device for wet treating a defined peripheral edge-region of a wafer-shaped article having a first surface plane W1, a second surface plane W2 and an edge surface. The device includes a support for holding the wafer-shaped article; liquid dispensing members for dispensing liquid onto the first surface plane W1 of the wafer-shaped article not facing the support and liquid guiding member connected to the support for guiding at least a part of the liquid around the edge surface of the wafer-shaped article towards the second surface plane W2 of the wafer-shaped article facing the support thereby wetting at least the edge surface, wherein the liquid guiding member has the form of a ring.

Abstract: According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

Abstract: An apparatus and process for producing a porous particulate media, such as nano-porous silicon (npSi). The apparatus has a rigid etching chamber configured to contain an etching reagent, an inlet for introducing the etching reagent into the etching chamber, and an outlet for outflow of the etching reagent from the etching chamber. One or more porous filter bags contain powders of a starting material for the porous particulate media, and are secured apart from each other within the etching chamber to enable contact between the etching reagent and the powders within the filter bags. Each filter bag is characterized by a pore size sufficiently small to confine the powders within the filter bag but sufficiently large to enable the etching reagent to flow through the filter bag. The etching reagent is flowed through the filter bags to etch the powders within each bag and produce the porous particulate media.

Abstract: According to the present invention, when performing spin treatment on a square wafer for a solar battery, it is possible to prevent the treatment medium, which is caused to flow down onto the surface of the wafer and scattered to the outside of the wafer from the four sides thereof in droplets, from reaching the back surface of the wafer.

Abstract: A laser beam machining system includes: a chuck table for holding a wafer; a laser beam irradiation unit for irradiating the wafer held by a chuck table with a laser beam; a machining feeding unit for machining feed of the chuck table; and an indexing feeding unit for indexing feed of the chuck table, wherein the system further includes etching unit for etching the wafer having undergone laser beam machining, and a feeding unit for feeding the laser beam machined wafer held on the chuck table to the etching unit.

Abstract: Methods for processing wafers, wafer processing apparatus, micro-fluid ejection head substrates, and etching process are provided. One such method includes applying a clamping voltage to an electrostatic chuck sufficient to hold a wafer in a substantially planerized orientation adjacent to the electrostatic chuck. A heat transfer fluid flows through a three dimensional space between the wafer and the electrostatic chuck to cool the wafer by convective heat transfer during wafer processing.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

Abstract: A thin film removing device and a thin film removing method are capable of removing straight parts of a thin film formed on a square substrate from corners of the substrate, and of suppressing the formation of mists. An approach stage 20 having flat stage plates 23 capable of being disposed substantially flush with the surface of a substrate M mounted on a support table 22 is positioned close to the substrate M mounted on the support table 22. Removing nozzles 30 jet a solvent toward edge parts of the substrate M and suck a solution produced by dissolving part of the resist in the solvent while the removing nozzles 30 are moved along side edges of the substrate M and the approach stage 20 disposed close to the substrate M. Thus, the removing nozzles 30 jet the solvent uniformly over the edge parts and corners of the substrate M and suck the solution without changing modes of jetting the solvent and sucking the solution.

Abstract: An etching apparatus and an etching method, wherein pressure exerted on a substrate is minimized, and an entire surface of the substrate is uniformly pressed during an etching process. The breakage of the substrate is prevented, and the substrate is uniformly etched. Accordingly, the thickness of the substrate may be reduced.

Abstract: A plasma etching method includes the step of etching a lower organic material film by using an upper organic material film and an intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture including an O2 gas and a carbon-containing compound gas which has a carbon atom in a molecule, to thereby transfer a pattern of the intermediate layer to the lower organic material film. A ratio of a flow rate of the carbon-containing compound gas to a total flow rate of the etching gas ranges from about 40 to 99%.

Abstract: Described are methods, systems, and chemistries for removing layers of stubborn silicon and silicon-nitride contamination layers from the inside surfaces of such articles as deposition tubes. In such embodiments, a tube to be cleaned is gently rolled on it side while a portion the tube's interior surface is exposed to an etchant. The tube is only partially filled with etchant to reduce the requisite etchant volume, and the rolling motion evenly exposes the contaminated inner surface to the etchant.

Abstract: An ion sampling method for wafer provides a wafer in a sampling chamber, wherein the wafer surface that is going to be sampled faces upward; spraying an extraction liquid continuously on the wafer surface to form a liquid film thereon; keeping the thickness of the film constant for dissolving the ion contaminants in the extraction liquid; and collecting the extract solution at the bottom of the sampling chamber.

Abstract: A method and apparatus for providing a positive voltage spike to a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

Abstract: A downward mechanism for support pins is applicable to a reactor of removable type. Support pins are located on the base of the reactor, and each support pin has a base thereunder. The downward mechanism has an elevator mechanism and a board fixed thereto. The board has several holes for the pin and the base to pass respectively therethrough. Each hole elongates into a slit allowing each of the support pins, only, to pass respectively therethrough.

Abstract: A ring is provided that, together with a wafer, separates a processing chamber into an upper portion and a lower portion so that one side of the wafer, such as the backside, can be cleaned or otherwise processed with little or no interaction to the frontside of the wafer. The wafer sits on pins extending from a plate so that processor cleaning gases can contact the surface of the wafer backside. In one embodiment, the ring is conductive, with an inner insulating ring, and the place is also conductive. The conductive plate and ring act as electrodes for plasma generation underneath the wafer.