Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: [Problems] To provide a silicon electrode plate for plasma etching that suppresses the unevenness of the surface caused by plasma etching so as to ensure uniform etching. [Means for Solving the Problems] The silicon electrode plate for plasma etching is constituted by single-crystal silicon in which B and Al have been added as dopants, wherein the concentration of Al is equal to or greater than 1×1013 atoms/cm3. In the silicon electrode plate for plasma etching, the electrical characteristic of single-crystal silicon is made uniform in a plane. Thus, the occurrence of unevenness of the surface may be minimized when the surface is depleted during plasma etching, and the occurrence of cracks may be suppressed.

Abstract: The present invention describes a method for manufacturing a low dielectric constant coating, which coating comprises an inorganic and an organic component, wherein precursors for these components are activated in at least two plasma sources for plasma activated deposition of a chemical vapor phase and wherein said activated precursors are combined before they are deposited from the chemical vapor phase on the substrate to form the coating, characterized in that said inorganic component comprises porous nanoparticles. The invention also describes a device for the manufacture of a low dielectric constant coating.

Abstract: A method for cleaning at least one component arranged in the inner region of a plasma process chamber using a cleaning gas including fluorine gas, where the process chamber has at least one electrode and counter-electrode for generating a plasma for plasma treatment, where the inner region is exposed to gaseous fluorine compounds with a partial pressure of greater than 5 mbar, where the process chamber has at least one electrode and counter-electrode for generating a plasma, and the fluorine gas is thermally activated by means of a temperature-regulating means, where the component to be cleaned has a temperature of<350° C.

Abstract: A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect.

Abstract: A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

Abstract: A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.

Abstract: A vacuum treatment installation has a vacuum receptacle with a first planar metallic electrode face, a second dielectric electrode face facing the first planar metallic electrode face which forms a surface of a dielectric areal configuration, a metallic coupling face facing a backside of the areal configuration, electric connections on the coupling and on the first electrode face, a gas line system through the coupling face and an areal distributed pattern of apertures through the areal configuration and wherein the areal dielectric configuration is formed by several ceramic tiles.

Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.

Abstract: Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

Abstract: A plasma processing apparatus, for performing a plasma processing on a substrate to be processed by generating a plasma of the processing gas in an evacuable processing chamber, includes an impedance adjusting mechanism. The impedance adjusting mechanism is provided with a resonance circuit formed to allow a radio frequency current to flow into the first electrode; a variable impedance unit installed on a power feed line to the first electrode; a detector for detecting an apparatus state to be used to search a resonance point of the resonance circuit; and a controller for searching a resonance point of the resonance circuit by detecting a signal of the apparatus state of the detector while varying a value of the variable impedance unit in a state where the plasma is formed and then adjusting the value of the variable impedance unit at the resonance point to a reference value.

Abstract: To improve durability of an electric discharge part of a dielectric barrier discharge system, a plasma treatment apparatus is configured so that a plasma source of a corona discharge system is installed in the vicinity of a plasma source of the dielectric barrier discharge system, a plasma generated by corona discharge is used as an auxiliary plasma, and a discharge sustaining voltage of a main plasma generated by the dielectric barrier discharge is reduced.

Abstract: A method for reducing capacitances between semiconductor devices is provided. A plurality of contact structures is formed in a dielectric layer. A mask is formed to cover the contact structures wherein the mask has mask features for exposing parts of the dielectric layer wherein the mask features have widths. The widths of the mask features are shrunk with a sidewall deposition. Gaps are etched into the dielectric layer through the sidewall deposition. The gaps are closed to form pockets in the gaps.

Abstract: A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.

Abstract: Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.

Abstract: A method for reducing capacitances between semiconductor device wirings is provided. A sacrificial layer is formed over a dielectric layer. A plurality of features are etched into the sacrificial layer and dielectric layer. The features are filled with a filler material. The sacrificial layer is removed, so that parts of the filler material remain exposed above a surface of the dielectric layer, where spaces are between the exposed parts of the filler material, where the spaces are in an area formerly occupied by the sacrificial layer. Widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. Gaps are etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.

Abstract: Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.

Abstract: In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

Abstract: The invention is directed to a method and an arrangement for cleaning optical surfaces of reflection optics which are arranged in a plasma-based radiation source or exposure device arranged downstream and contaminated by debris particles emitted by a hot plasma of the radiation source. It is the object of the invention to find a novel possibility for in-situ cleaning of the optical surfaces of reflection optics which are contaminated by debris in plasma-based radiation sources so as to allow an integrated generation of known gas radicals and the isotropic distribution thereof on the contaminated optical surfaces. According to the invention, this object is met in that the gas radicals are generated by dielectrically impeded discharge between two surface electrodes along the entire optical surface.

Abstract: A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.

Abstract: Methods and systems are provided for retrofitting wafer etching systems. The methods and systems use an adapter ring to retrofit wafer etching systems designed for use with multiple piece electrodes such that single piece electrodes can be used in the etching systems. A portion of the adapter ring is disposed in a receptacle formed in a thermal coupled plate in the wafer etching system. Another portion of the adapter ring is positioned in a channel formed in an upper electrode.

Abstract: A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an exhaust space for exhausting gas out of the processing space, and an exhaust flow path that communicates the exhaust space and the processing space together. The plasma processing apparatus further has a grounding component that is electrically grounded and is disposed in the exhaust flow path. The grounding component has a conducting portion made of a conductive material, and the conducting portion has an exposed area exposed to the exhaust flow path in a range of 100 to 1000 cm2.

Abstract: An atmospheric pressure plasma reactor includes a high-voltage electrode, a common grounded electrode, a bias electrode and at least one dielectric layer. The high-voltage electrode is connected to a high-voltage power supply. The common grounded electrode is used with the high-voltage electrode to discharge and therefore produce planar atmospheric plasma from reactive gas. The bias electrode is used to generate bias for attracting the ions of the planar atmospheric pressure plasma. The dielectric layer is used to suppress undesirable arc discharge during the discharging.

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract: A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of confinement rings is separated by a space. A plunger moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is provided and coupled to the plunger. The proportional adjustment support is configured to move the confinement rings to one or more positions, such that the plunger is settable in positions along the plane. The positions define the space separating confinement rings, and the space is proportionally set between the confinement rings. The proportional adjustment support is defined by a plurality of support legs, and each of the support legs is pivotably interconnected with at least one other support leg.

Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

Abstract: A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

Abstract: An apparatus and a method for plasma surface treatment which treats a surface of a treatment portion of an electrically conductive object using ions from plasma are disclosed. The apparatus includes a connector electrically connected to the treatment portion for applying negative voltage pulses to the treatment portion; a pulse voltage generating unit electrically connected to the connector; and magnetic cores disposed at the boundary of the treatment portion for preventing electric current caused by the negative voltage pulses applied to the treatment portion from flowing across the boundary of the treatment portion is provided. The apparatus and method for plasma surface treatment can confine the treatment portion by using negative high voltage pulses and magnetic cores. Also, the apparatus and method can apply negative high voltage pulse to the treatment portion of an electrically grounded object such as a metal sheet coil and a metal wire coil.

Abstract: According to one embodiment, a plasma processing apparatus includes a first electrode, a second electrode, a dielectric member, and a control unit. Plasma is generated between the first electrode and the second electrode. The dielectric member is provided between the first electrode and the second electrode. The control unit is configured to change relative dielectric constant of the dielectric member in a plane crossing a first direction from the first electrode to the second electrode.

Abstract: A plasma processing apparatus that enables formation of a deposit film on a surface of a grounding electrode to be prevented. A substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode at least part of which is exposed in the substrate processing chamber. The grounding electrode is disposed in a corner portion formed through intersection of a plurality of internal surfaces in the substrate processing chamber.

Abstract: A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber.

Abstract: Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrude upward, and has an electrostatic chuck electrode therein. The substrate supporting section which supports the substrate contained in the substrate containing holes is provided with a plurality of protruding sections formed at intervals in the circumferential direction of the substrate containing holes. The substrates are supported in point-contact mode by means of the protruding sections.

Abstract: A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: A method and apparatus for cleaning and surface conditioning objects using plasma are disclosed. One embodiment of the method discloses providing a plurality of elongated dielectric barrier members arranged adjacent each other, the elongated dielectric barrier members having electrodes coupled therein, providing a ground plane, introducing the objects proximate the elongated dielectric barrier members and the ground plane, and producing a dielectric barrier discharge to form plasma between the ground plane and the elongated dielectric barrier members for cleaning the objects. One embodiment of the apparatus for cleaning objects using plasma discloses a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes, each contained within, and extending substantially along the length of, respective ones of the elongated dielectric barrier members, and a ground plane proximate the plurality of elongated dielectric barrier members.

Abstract: A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.

Abstract: An apparatus and method for cleaning objects using plasma are disclosed. The apparatus provides a plurality of elongated dielectric barrier members arranged adjacent each other, a plurality of electrodes each contained within, and extending substantially along the length of, the plurality of elongated dielectric barrier members, and at least one buss bar for electrically coupling the plurality of electrodes to a voltage source.

Abstract: Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber.

Abstract: In a plasma processing apparatus that executes plasma processing on a semiconductor wafer placed inside a processing chamber by generating plasma with a processing gas supplied through a gas supply hole at an upper electrode (shower head) disposed inside the processing chamber, an interchangeable insert member is inserted at a gas passing hole at a gas supply unit to prevent entry of charged particles in the plasma generated in the processing chamber into the gas supply unit. This structure makes it possible to fully prevent the entry of charged particles in the plasma generated inside the processing chamber into the gas supply unit.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract: A discharge chamber formed of a ridge waveguide having ridge electrodes that are disposed facing each other and that generate plasma therebetween; a gas supplying portion that is disposed adjacent to the discharge chamber and that supplies source gas, which is used to form the plasma, toward the ridge electrodes; a substrate that is disposed at a position such that the gas supplying portion is flanked by the substrate and the discharge chamber and that is subjected to the processing by the plasma; a low-pressure vessel that accommodates thereinside at least the discharge chamber, the gas supplying portion, and the substrate; and an exhaust portion that is communicated at a position in the low-pressure vessel such that this position and the gas supplying portion are disposed on either side of the discharge chamber, and that reduces the pressure inside the low-pressure vessel are provided.

Abstract: A gas-permeable plasma electrode has an electrically conductive container with a base which has a hole, and a gas-permeable porous electrically conductive film, with the gas-permeable porous electrically conductive film being arranged opposite the base in the electrically conductive container and being connected to the electrically conductive container, and with the gas-permeable porous electrically conductive film having at least one layer of electrically conductive grains, at least some of which are arranged so as to form a gas-permeable film.

Abstract: A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the thermal control plate and the top plate to allow electrical and thermal conduction between the thermal control plate and top plate. A lubricating material between the thermal bridge and the top plate minimizes galling of opposed metal surfaces due to differential thermal expansion between the top plate and thermal control plate. A heater supported by the thermal control plate cooperates with the temperature controlled top plate to maintain the showerhead electrode at a desired temperature.

Abstract: The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded.

Abstract: An assembly comprises a component of a plasma process chamber, a thermal source and a polymer composite therebetween exhibiting a phase transition between a high-thermal conductivity phase and a low-thermal conductivity phase. The temperature-induced phase change polymer can be used to maintain the temperature of the component at a high or low temperature during multi-step plasma etching processes.

Abstract: Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.

Abstract: A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.

Abstract: A confinement assembly for confining a discharge within an interaction space of a plasma processing apparatus comprising a stack of rings and at least one electrically conductive member. The rings are spaced apart from each other to form slots therebetween and are positioned to surround the interaction space. At least one electrically conductive member electrically couples each ring. The electrically conductive member contacts each ring at least at a point inside of the outer circumference of each ring.