Abstract: There is provided a plasma processing apparatus that can generate uniform plasma without increasing costs per unit electric power even though the discharge area is increased to adapt to samples in given sizes by arranging a plurality of plasma discharge units. A plasma processing apparatus includes an RF power supply having an RF signal circuit and an RF power circuit, a case, and a discharge electrode. A plasma module is configured of the discharge electrode and the RF power circuit provided in the case. A frequency signal from the RF signal circuit is inputted to a plurality of the plasma modules connected in parallel with each other.

Abstract: A plasma processing apparatus performs a process on a substrate by using plasma. The plasma processing apparatus includes a processing chamber; a mounting table which is located in the processing chamber and on which a substrate is mounted; a gas shower head formed of a conductive material provided to face the mounting table and having at the bottom surface thereof a plurality of gas injection openings for supplying a processing gas into the processing chamber; an induction coil to which a high frequency current is supplied to generate an inductively coupled plasma in a region surrounding a space below the gas shower head; a negative voltage supplying unit for applying a negative DC voltage to the gas shower head to allow an electrical field, which is induced by the induction coil, to be drawn to a central portion of the processing region; and a unit for evacuating the processing chamber.

Abstract: A showerhead electrode for a plasma processing apparatus includes an elastomeric sheet adhesive bond between mating surfaces of an electrode and a backing member to accommodate stresses generated during temperature cycling due to mismatch in coefficients of thermal expansion. The elastomeric sheet comprises a thermally conductive silicone adhesive able to withstand a high shear strain of ?300% in a temperature range of room temperature to 300° C. such as heat curable high molecular weight dimethyl silicone with fillers. The sheet form adhesive has bond thickness control for parallelism of bonded surfaces over large areas. The sheet adhesive may be cast or die cut into pre-form shapes that can conform to irregularly shaped features, maximize surface contact area with mating electrode surfaces, and installed into cavities of the mating assembly. Installation can be manually, manually with installation tooling, or with automated machinery.

Abstract: Provided is a plasma reactor for removal of contaminants, which is installed between a process chamber and a vacuum pump and removes contaminants emitted from a process chamber. The plasma reactor includes: at least one dielectric body that forms a plasma generation space therein; a ground electrode connected to at least one end of the dielectric body; and at least one driving electrode fixed to an outer peripheral surface of the dielectric body, and connected to an AC power supply unit to receive an AC driving voltage. The ground electrode has a non-uniform diameter along the lengthwise direction of the plasma reactor.

Abstract: A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.

Abstract: A plasma processing apparatus includes a processing chamber, a first radio frequency power supply for outputting a first radio frequency power, the first radio frequency power supply being electrically connected to a first electrode arranged in the processing chamber, a heater power supply for supplying electric power to a heating element provided in the first electrode, first and second power supply lines for electrically interconnecting the heating element and the heater power supply, and a filter circuit provided in the first and second power supply lines for attenuating radio frequency noises coming from the heating element. The filter circuit includes a first and a second air-core coil respectively provided on the first and the second power supply line at an initial stage of the filter circuit when viewed from the heating element, the air-core coils being in a coaxial relationship with each other and having substantially the same winding length.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: A device and method for generating a physical plasma in hoses of long and simultaneously constricted lumen, flexible or rigid dielectric hoses, tubes or other hollow bodies in the low, normal or overpressure range, which are partially or completely filled or flushed by process medium of gas or gas mixtures, one or more liquids, liquids including gas bubbles, liquid-gas mixtures, aerosols and/or foam, for purposes of cleaning, activating, coating, modifying and biologically decontaminating, disinfecting, sterilizing the inner walls of the hoses or the process medium itself. The device includes a high voltage supply and a process medium supply, at least one electrically conductive grounded electrode and at least one electrically conductive high voltage electrode, both embedded in the wall of the hose.

Abstract: A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.

Abstract: A plasma processing apparatus performing a plasma processing to a substrate includes a processing vessel having a vacuum exhaustible processing chamber; a mounting table serving as a lower electrode for mounting thereon the substrate in the processing chamber; a circular ring member arranged to surround a periphery of the substrate whose radial one end portion is supported by the mounting table; an upper electrode arranged above the lower electrode to face same; and a power feed for supplying the mounting table with a high frequency power. The plasma processing apparatus further includes a first intermediate electrical conductor supporting a middle portion of the circular ring member; and a first movable electrical conductor which is selectively electrically connected or disconnected to the power feed; and a second intermediate electrical conductor supporting a radial opposite end portion of the circular ring member.

Abstract: The present invention relates to a capacitive-coupled plasma processing apparatus, wherein an electric field regulating element, i.e., an “electric field lens”, is arranged in the reaction chamber to generate a regenerated electric field in a direction opposite to that of the original radio frequency electric field in the reaction chamber, so that the non-uniformity of etching rate on the surface of the substrate of the plasma incurred by the original radio frequency electric field is decreased; and the electric field regulating element, i.e., the “electric field lens”, further decreases the equivalent quality factor Q value of the reaction chamber, expands the radio frequency band, and prevents high-voltage electric arcing. The present invention further provides a method for processing the substrate using the processing apparatus.

Abstract: A process including a main etching step under a first pressure using a gas containing at least HBr as an etching gas. The main etching is ended before a silicon oxide film is exposed. An over-etching process is effected under a second pressure higher than the first pressure using a gas containing at least HBr so as to completely expose the silicon oxide film. In such a way, the selectivity of a silicon-containing conductive layer with respect to the silicon oxide film is improved. Without etching the silicon oxide film layer, which is an underlying layer, and without marring the shape of the silicon-containing conductive film layer formed by etching, only the desired silicon-containing conductive film layer is removed by etching reliably.

Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Abstract: To provide a technique which cleans an attracting face of a mechanism for electrostatically attracting an object to be processed inside a vacuum processing apparatus and keeps its attracting force constant. The method of the present invention is for cleaning an attracting face of a hot plate which holds the object to be processed inside a vacuum processing chamber through electrostatic attraction. The invention method includes a step of cleaning the attracting face of the hot plate by applying a high-frequency electric power of 13.56 MHz to a metallic base arranged under and near the hot plate in a state in which a cleaning gas is introduced into the vacuum processing chamber.

Abstract: According to one embodiment, there is provided a coaxial cable that transmits radio frequency power. The coaxial cable includes an inner tube, an outer tube, and an insulating support member. The inner tube is made of a conductor. The outer tube is disposed outside the inner tube coaxially with the inner tube and is made of a conductor. The insulating support member is disposed between the inner tube and the outer tube. Cooling gas flows into at least one of a first space inside the inner tube and a second space between the inner tube and the outer tube.

Abstract: An apparatus for etching an edge of a wafer includes a chamber, a chuck disposed inside the chamber upon which the wafer is disposed, a plate spaced apart from the wafer and disposed above the wafer, and an edge ring formed along the edge of the wafer and combined with an outer periphery of the plate, wherein the edge ring comprises a ring base spaced a distance apart from the wafer to form a parallel plane with respect to the wafer, and a first ring protrusion protruding from the ring base to insulate the edge of the wafer from a central region of the wafer.

Abstract: RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.

Abstract: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating a substrate may include a process chamber having a space formed therein, a chuck positioned in the process chamber and supporting a substrate, a gas supply unit supplying reaction gas into the process chamber, an upper electrode positioned above the chuck and applying high frequency power to the reaction gas, and a heater installed in the upper electrode and heating the upper electrode.

Abstract: A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.

Abstract: A process plasma chamber for processing a wafer may include a chamber body for processing the wafer, a wafer chuck for positioning the wafer within the chamber body and a plasma body being generated by RF power in the chamber body. The wafer chuck may position the wafer downwards and above the plasma body. The chamber body may include a showerhead positioned below the plasma body. The chamber body may include a first top electrode for receiving RF power. The chamber body may include a second top electrode for receiving RF power.

Abstract: A plasma processing apparatus includes a processing chamber; a lower center electrode mounting thereon a target substrate; a lower peripheral electrode; an upper electrode disposed above the lower center electrode; a gas supplying unit supplying a processing gas into the processing chamber; a first RF power supply outputting a first RF power for generating a plasma of the processing gas; a second RF power supply for outputting a second RF power for introducing ions into the substrate; and a central feed conductor connected to a rear surface of the lower center electrode. The apparatus further includes a circumferential feed conductor connected to a rear surface of the lower peripheral electrode to bypass and supply some of the first RF power to the lower peripheral electrode; and a movable feed conductor electrically connecting the central feed conductor and the circumferential feed conductor for the first RF power by capacitance coupling.

Abstract: Plasma processing chamber having a bottom electrode assembly is disclosed. The assembly has an inner bottom electrode for supporting a substrate and an outer bottom electrode disposed outside of the inner bottom electrode. The outer bottom electrode defines a region for chamber cleaning, and the outer bottom electrode includes a conductive ring and an inductive coil placed under the conductive ring. Further included is a dielectric material disposed between the inner bottom electrode and the outer bottom electrode, and the dielectric material separates the inner bottom electrode from the outer bottom electrode. A switch is provided for connecting radio frequency (RF) power to either the inner bottom electrode or the outer bottom electrode. The chamber also includes a top electrode assembly with a top electrode. The top electrode is disposed above both the inner and outer bottom electrodes.

Abstract: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

Abstract: A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.

Abstract: Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

Abstract: A movable deposition box (02) for silicon-based thin film solar cell comprises an electrode array composed of at least a group of cathode plates (203) and a piece of anode plate (208) which are set in movable chamber, wherein a feeding socket (203-1) is positioned on a circular or semicircular concave surface in the center area on the backside of the cathode plates (203), a circular or semicircular end face (201-1) of a feeding component (201) which has a flat middle part contacts the signal feeding socket (203-1) and feeds in RF/VHF power signal, the anode plate (208) is grounded, and a shield cover (204) of the cathode plate has through-hole (204-1) and is insulated from the cathode plate (203).

Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

Abstract: RF power is coupled with different phase offsets to different RF connection points on an electrode of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply, wherein each power supply synchronizes its phase to a common reference RF oscillator.

Abstract: An ALD apparatus includes: a process chamber that accommodates a boat charged with a plurality of wafers; gas supply systems that supplies process gases to the wafers; a pair of electrodes arranged in a stacked direction of the wafers; a high-frequency power source that supplies a high-frequency power to the pair of the electrodes; a variable impedance element connected to a front end opposite to the high-frequency power of the pair of the electrodes; and a control unit that changes an output frequency of the high-frequency power source. By moving the local minimum point of the voltage distribution through the change of the output frequency of the high-frequency power source during the plasma discharge, the plasma generation amount within a pair of discharge electrodes is uniformized. Thus, the processing non-uniformity between the wafers stacked in the boat is suppressed, and the processing is uniformized over the total boat length.

Abstract: A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

Abstract: A movable jig for a silicon-based thin film solar cell comprises parallel electrode plates (203,208), a supporting frame and a signal feed-in assembly (201). The supporting frame is a movable frame and its side frame (216) is grounded. A shield device is set on the jig or among jig arrays themselves for preventing from being disturbed. The signal feed-in assembly is a conductor and its middle portion and head portion form a ladder cylinder, and one end surface (201-1) of the signal feed-in assembly is triangular and can surface contact and connect with a sunken triangular feed-in port (203-1) in the center area of the back surface of the cathode plate (203) of the electrode plates, so the radio frequency/the very high frequency power supply signal can be fed in.

Abstract: A feeder rod that transmits radio-frequency power via a matcher to a susceptor used in plasma generation that is disposed inside a processing chamber where a wafer undergoes a predetermined type of plasma processing, includes as an integrated part thereof electrical characteristics measurement probes. The integrated feeder rod unit can be detachably installed as a whole between the matcher and the processing chamber.

Abstract: In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.

Abstract: A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes a plurality of electrically conductive plates stacked in a layered manner. Dielectric sheets are disposed between each adjacently positioned pair of the plurality of electrically conductive plates. A number of holes are each formed to extend through the plurality of electrically conductive plates and dielectric sheets. The system also includes at least two independently controllable radiofrequency (RF) power sources electrically connected to one or more of the plurality of electrically conductive plates. The RF power sources are independently controllable with regard to frequency and amplitude.

Abstract: A substrate processing apparatus capable of preventing the abnormal discharge from being generated on a substrate. A housing chamber houses the substrate. A mounting stage arranged in the housing chamber, is configured to enable the substrate to be mounted thereon. A disc-like electrode structure is connected to a high-frequency power supply, and connected to a gas supply apparatus via at least one gas supply system. The electrode structure has therein at least one buffer chamber and a plurality of connecting sections connected to the gas supply system. The buffer chamber is communicated with the inside of the housing chamber via a number of gas holes, and is communicated with the gas supply system via the plurality of connecting sections. The plurality of connecting sections for the buffer chamber are arranged on the circumference of a circle centering around the center of the electrode structure at equal intervals.

Abstract: Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.

Abstract: A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus (10) includes a depressurized processing room (11); a susceptor (12) that is provided in the processing room (11) and configured to mount a wafer (W) thereon; a HF high frequency power supply (18) configured to apply a high frequency voltage for plasma generation to the susceptor (12); a LF high frequency power supply (20) configured to apply a high frequency voltage for a bias voltage generation to the susceptor (12); and a DC voltage applying unit (23) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor (12).

Abstract: An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented, so that the ability to carry out maintenance can be easily maintained. An upper electrode assembly has an upper electrode plate, a cooling plate (C/P) and a spacer interposed between the upper electrode plate and the C/P. The upper electrode plate has therein electrode plate gas-passing holes that penetrate through the upper electrode plate. The C/P has therein C/P gas-passing holes that penetrate through the C/P. The spacer has therein spacer gas-passing holes that penetrate through the spacer. The electrode plate gas-passing holes, the C/P gas-passing holes and the spacer gas-passing holes are not disposed collinearly.

Abstract: In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle ?1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°<?1?180°.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

Abstract: A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.

Abstract: In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.

Abstract: A plasma processing apparatus includes: a first ground member provided in processing chamber in such a way that at least a portion of the first ground member is exposed to a processing space, wherein the first ground member forms a ground potential; a second ground member provided in an exhaust space of the processing chamber to face the first ground member in such a way that at least a portion of the second ground member is exposed to the exhaust space, wherein the second ground member forms a ground potential; and a ground rod that moves up and down between the first and second ground members and contacts any one of the first or second ground member to adjust a ground state of the first or second ground member.

Abstract: Disclosed is a substrate processing apparatus, including: a processing container; a gas supply section to supply a desired processing gas to the processing container; a gas exhaust section to exhaust a surplus of the processing gas from the processing container; a substrate placing member to place a plurality of substrates thereon in a stacked state in the processing container; and an electrode, to which high frequency electric power is applied, to generate plasma for exciting the processing gas, the electrode including two thin and long linear sections disposed in parallel and a short-circuit section to electrically short-circuit one ends of the linear sections, and the linear sections extending beside the substrates in a direction substantially perpendicular to main faces of the substrates.