Abstract: A plasma processing system has a chamber, a workpiece holder in an interior of the chamber, a first power circuit, a second power circuit, and a feedback circuit. The first power circuit has a first power supply coupled to a first matching network. The first matching network is coupled to a coil adjacent to the chamber. The second power circuit has a second power supply coupled to a second matching network. The second matching network is coupled to the workpiece holder. The feedback circuit includes a radio frequency (RF) probe and a controller. The RF probe is partially disposed in an interior of the chamber. The controller is coupled to the RF probe and the first power circuit. The RF probe measures a change in plasma density in the interior of the chamber and the controller adjusts the first power supply in response to the change in plasma density.

Abstract: Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.

Abstract: The present invention relates to an apparatus for forming polymer by DC plasma polymerization wherein a substrate is used as an electrode by applying a power to the substrate and an opposite electrode in a deposition chamber is positioned to both the surfaces of the substrate to be deposited. In addition, the present invention can acquire safety during the polymerization by insulating a main body from a substrate to which voltage is applied.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.

Abstract: Within a plasma processing apparatus and a plasma processing method there is employed interposed between a decoupling capacitor and a radio frequency powered electrode a minimum of two adjustment capacitors. The minimum of two adjustment capacitors provide for enhanced plasma control within the plasma processing apparatus and the plasma processing method.

Abstract: A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

Abstract: The present invention provides an apparatus and a method of generating and controlling plasma formed in a capacitively coupled plasma region between a plasma electrode and a bias electrode. The plasma electrode includes a plurality of sub-electrodes that are electrically insulated from one another. Radio frequency plasma generating electric power is provided to the plasma electrode. Radio frequency bias electric power, at a lower frequency than the plasma generating radio frequency electric power, is also provided. A first portion of the bias electric power is provided to the bias electrode, and a second portion of the bias electric power is provided to the plasma electrode. At least one filter, impedance matching network, phase shifter, and power splitter are used to affect the electric power provided to the electrodes.

Abstract: A focus ring (200) and related assembly for a plasma reactor system (100, 400) for processing a workpiece (176) having an outer edge and an upper surface. The assembly has a focus ring support surface (173) arranged around the workpiece perimeter and a ring electrode (210) arranged atop the focus ring support surface. An insulating focus ring (200) is arranged atop the ring electrode. In one embodiment, a first RF power supply (180) is electrically connected to the focus ring electrode and a tuning network (220) is arranged between the first RF power supply and the ring electrode. Methods of forming a plasma (130) and processing a workpiece in an optimized way, as well as a plasma reactor system for accomplishing the same, are also disclosed.

Abstract: In a plasma processing method for processing an object which is placed in a reactor container, by decomposing a raw material gas in the reactor container using a high frequency power outputted from a high power supply and introduced into the reactor container via a matching device and an electrode, the adjustment of impedance by the matching device during plasma processing is controlled within a predetermined impedance variable range, and the impedance variable range is changed as plasma processing proceeds. Another plasma processing method employing a plurality of power supply systems having high frequency power supplies and matching devices capable of changing impedances and controlling the adjustment of impedance by at least one of the matching devices during plasma processing within a predetermined impedance variable range.

Abstract: In one embodiment, an absorptive filter network is provided between an RF generator and a semiconductor processing reactor. The absorptive filter network includes an absorptive filter circuit which allows energies at a fundamental frequency to pass while absorbing energies at frequencies away from the fundamental frequency. An absorptive filter circuit is located on the reactor-side of the absorptive filter network to isolate the RF generator from the effects of the non-linear loading presented by a plasma in the reactor. Another absorptive filter circuit is located on the RF generator-side of the absorptive filter network to present a stable voltage waveform to the plasma.

Abstract: A gas supplying device introduces a predetermined gas into a vacuum chamber, while an evacuation device is exhausting the gas to maintain the inside of the vacuum chamber at a predetermined pressure. A high frequency power source for an antenna is supplied to an antenna provided protrudingly into the vacuum chamber with a high frequency power to generate plasma inside the vacuum chamber, and plasma processing is applied to a substrate placed on an electrode. Providing a low pass filter whose cut-off frequency is higher than the oscillating frequency of the high frequency power source between a traveling wave output terminal of a directional coupler, and an amplifier in the high frequency power supply for an antenna precisely controls power.

Abstract: The plasma processing apparatus for providing plasma processing to an object 114 placed inside a processing chamber 104 comprises a vacuum chamber 104, a process gas feeder 105 feeding gas into chamber 104, a wafer electrode 115 disposed within chamber 114 for mounting the object 114, a wafer bias power generator 117 supplying bias voltage to electrode 115, and a plasma generating means 112 for generating plasma within chamber 104, wherein said wafer bias power generator includes a clip circuit for clipping either the positive-side voltage or negative-side voltage to a predetermined voltage.

Abstract: An apparatus of fabricating a semiconductor device includes: a chamber; a radio frequency (RF) power supply supplying an RF power for the chamber; a matching box including a matching unit adjusting an impedance of the RF power; and a chuck penetrating a surface of the chamber, the chuck including a fixing means to fix the matching box to the chuck.

Abstract: The present invention provides a matching circuit which has a wide range in which matching can be achieved and the matched state of which is stabilized with respect to a change in the load state. To an input terminal 31 of a matching circuit 30O, one terminal of a first variable reactance element 32 is connected. The other terminal of the first variable reactance element 32 is connected to a point between a first fixed reactance element 33a and a second fixed reactance element 33b, which are connected in series. The first fixed reactance element 33a is grounded, and the second fixed reactance element 33b is connected to one terminal of a second variable reactance element 36 and connected to one terminal of a stripline 37. The other terminal of the second variable reactance element 36 is grounded, and the other terminal of the stripline 37 is connected to an output terminal 38.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power having a frequency not lower than 50 MHz to the upper electrode, a second high frequency power source for applying a high frequency power having a frequency not lower than 2 MHz and lower than the frequency of the first high frequency power to the upper and lower electrodes. The frequency of the high frequency power applied by the second high frequency source to the upper electrode is equal to that of the high frequency power applied by the second high frequency source to the lower electrode, and the high frequency power applied by the second high frequency source to the upper electrode has a reverse phase relative to the high frequency power applied by the second high frequency source to the lower electrode.

Abstract: A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

Abstract: A plasma processing apparatus includes a radio frequency generator, a plasma processing chamber, a matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber, and matching circuit adjusting means for matching the output impedance of the matching circuit to the impedance of the plasma processing chamber in a nondischarge state. The matching circuit is a product matching circuit that is produced based on a circuit constant of an adjusting matching circuit. The adjusting matching circuit is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber.

Abstract: A plasma reactor includes a chamber adapted to support an evacuated plasma environment, a passageway connecting the chamber to a region external of the chamber, the passageway being defined by spaced opposing passageway walls establishing a passageway distance therebetweeen, and a plasma-confining magnet assembly adjacent the passageway.

Abstract: The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and a match network. The modulated RF power generator is arranged to generate a modulated RF power. The plasma processing chamber is arranged to receive the modulated RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma processing chamber includes an electrostatic chuck for holding the wafer in place with the electrostatic chuck including a first electrode disposed under the wafer for receiving the modulated RF power. The plasma processing chamber further includes a second electrode disposed over the wafer. The modulated RF power generates plasma and ion bombardment energy for processing the wafer.

Abstract: Methods and apparatus for ascertaining the end of an etch process while etching through a target layer on a substrate in a plasma processing system which employs an electrostatic chuck. The end of the etch process is ascertained by monitoring the electric potential of the substrate to detect a pattern indicative of the end of the etch process. By the way of example, changes to this potential may be observed by monitoring the current flowing to the pole of the electrostatic chuck. Upon ascertaining the pattern indicative of the end of the etch process, for example by monitoring the current signal, a control signal is produced to terminate the etch.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, an electromagnetic field generator and a support member is provided. The target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. During processing, a bias is applied to the support member by an RF power source. The return plates are selectively energized to provide a return path for the RF currents, thereby affecting the orientation of an electric field in the chamber.

Abstract: An RF power supply system (200) for use with an electrode (60) in a plasma reactor system (10) capable of supporting a plasma (32) with a plasma load impedance (ZR), wherein the electrode comprises a plurality of electrode segments (62a,62b, . . . , 62n). The system comprises a master oscillator (210), and a plurality of RF power supply subsystems (220a, 220b, . . . 220n) each electronically connected thereto, and to respective ones of the electrode segments. Each RF power supply subsystem includes a phase shifter (224), an amplifier/power supply (230), a circulator (236), a directional coupler (242), and a match network (MN/L). The latter has a match network impedance. The system further includes a control system (184) electronically connected to each RF power supply subsystem.

Abstract: An apparatus and method for adjusting a distribution of a density of a plasma and/or a distribution of a chemical composition of a plasma, thereby adjusting the characteristics of a reaction used to process a substrate. The distribution of the density and/or the chemical composition are controlled by adjusting the geometry of recombination surfaces that are in contact with the plasma and which thereby stimulate the recombination of ions and electrons in particular regions of the plasma. For example, a recombination member having a predetermined geometry can be provided in order to adjust the plasma density and chemistry in one or more local regions. In addition, plasma density can be adjusted by providing a conductive shield to reduce the coupling of RF power to particular regions of the plasma, thereby reducing plasma density in these regions. By adjusting the distribution of the density and chemical composition of a plasma, uniformity of a plasma processes (e.g.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Abstract: Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.

Abstract: A method and apparatus are provided by which the effects of the plasma power RF source and substrate bias are decoupled to reduce the effect of plasma power on the wafer bias and to improve process control. A technique is provided that includes establishing a high density plasma adjacent to a semiconductor wafer, such as by inductive coupling, at some RF plasma excitation frequency, preferably at a frequency between 50 kHz and 50 MHz. RF power from a bias power source is applied to a chuck on which a wafer is supported which exhibits high capacitance between the RF feed of the bias power source and the wafer. The RF power to the substrate support is applied through a matching unit at a frequency that is identical to or close to that of the frequency of the primary power to the plasma.

Abstract: A reduced impedance chamber for plasma processing leads to operational advantages including a plasma sheath voltage that is substantially independent of plasma impedance over a range of plasma impedances. The design of such a reduced impedance chamber includes a chuck assembly, a counter electrode, and a plasma source. The chuck assembly allows mounting of a workpiece for processing and includes a driven electrode and a ground portion. The plasma source operates to generate a plasma in the chamber from process gas. A wall portion of the plasma source is directly electrically connected to the counter electrode and to the ground portion of the chuck assembly. The counter electrode may include an inject-exhaust plate that is mounted in a position opposed to the chuck assembly and that operates to inject process gas into the chamber and to exhaust effluent.

Abstract: Inside a processing chamber 102 of an etching apparatus 100, a pair of electrodes, i.e., an upper electrode 118 and a lower electrode 106, are provided. The circumferential edge of the upper electrode 118 is covered by a first ring-shaped body 122, and a cylindrical body 124 is provided around the first ring-shaped body 122. A second ring-shaped body 116 is provided around the lower electrode 106. When the lower electrode 106 is set at the processing position, the second ring-shaped body 116 is positioned inside the cylindrical body 124 to form a plasma space 102a. A gas discharge path 142 is formed between the cylindrical body 124 and the second ring-shaped body 116. The distance between the cylindrical body 124 and the second ring-shaped body 116 is set so as to ensure that the conductance value of the gas inside the gas discharge path 142 is higher than the conductance value of the gas inside the plasma space 102a.

Abstract: The present invention relates to a method of forming an electrode of an apparatus for manufacturing a liquid crystal display (LCD) device, wherein the electrode has a substantially flat surface. A method of forming an electrode of an apparatus for manufacturing a liquid crystal display device includes milling an aluminum plate, wherein the milling comprises roughing, rest roughing and finishing, polishing an upper surface of the aluminum plate by using fine ceramic powder, and anodizing the aluminum plate.

Abstract: A plasma processing apparatus for plasma processing of a substrate, having a plasma processing chamber, a supplier of a plasma processing gas, an evacuator of the plasma processing chamber, a plasma generator, and a processor which processes a substrate to be processed by exposing the substrate to the plasma which is generated. The plasma generator includes a first conductive component having a first high-frequency electric power supplied thereto, at least one second conductive component having a second high-frequency electric power supplied thereto, an insulator which insulates the first conductive component with respect to the second conductive component, and a generator which generates a high-frequency electric field between the first conductive component and the second conductive component so as to enable generation of a high-frequency electric field between the first conductive component and the second conductive component.

Abstract: In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100 to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

Abstract: This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity problem which arises as the result of nonuniform power coupling between the wafer and the walls of the etch chamber. The solution to greatly mitigate the nonuniformity problem is to increase the impedance between wafer and the chamber walls. This may be accomplished by placing a cylindrical dielectric wall around the wafer. Quartz is a dielectric material that is ideal for the cylindrical wall if silicon is to be etched selectively with respect to silicon dioxide, as quartz it is virtually inert under such conditions.

Abstract: In a plasma processing apparatus, a showerhead is provided that allows for selective ionization of one or more process gasses within the showerhead. The showerhead allows the gasses to react after they exit the showerhead. As a result, a greater volume of materials are. available for deposition on a wafer surface during a chemical vapor deposition process than would be available in a process that remotely generates plasma. In addition, less damage is done to the wafer that would be done in a process that generates plasma next to the wafer.

Abstract: A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.

Abstract: A rotary drive which is suitable in treatment of three-dimensional workpieces. In this rotary apparatus, only the removably mounted rotatable rods that serve as sample holders are connected to high voltage, which is delivered via a central high-voltage lead-in at the lower end of the rods, while the actual drive elements for rotating the rods are electrically insulated therefrom by suitable ceramic insulating elements.

Abstract: The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Abstract: An inductively coupled plasma dry etching device includes etching chamber 10 and ceramic dome 20. Etching chamber 10 is provided with gate 11 and gas injection port 12. Ceramic ESC stage 31 is provided inside etching chamber 10, and outside etching chamber 10, pressure gauge 13 and pressure controller 40 are connected, and high-frequency power supply 23 is connected to ESC stage 31. First coil 21 and second coil 22 are arranged in helical form on the outside of dome 20 such that turns of one coil lie between turns of the other coil, first coil 21 being connected to second high-frequency power supply 24 and second coil 22 being connected to third high-frequency power supply 25. The high-frequency power supplies are switched at a prescribed time interval.

Abstract: A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles (25), (26) with different frequencies. The RF power in the first subcycles (25) is higher in frequency than that in the second subcycles (26). A charge accumulated during the first subcycles (25) in which the RF power of high frequency is applied can be relieved during the second subcycles (26) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles (25).

Abstract: An apparatus for forming an electromagnetic field in a processing chamber, including a first pair of electrodes for generating a first electromagnetic field within the processing chamber and a second pair of electrodes for generating a second electromagnetic field within the processing chamber. The first and second pairs of electrodes are oriented so that the first and second electromagnetic fields are oriented generally perpendicular to each other. When energized, the first and second electromagnetic fields combine and may take the form of a lissajous pattern. When a gas is exposed to the combined electromagnetic field a plasma may be formed in the general shape of the combined electromagnetic field.

Abstract: The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

Abstract: There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same.

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom.

Abstract: A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

Abstract: A hot wire chemical vapor deposition method and apparatus for fabricating high quality amorphous, micro-crystalline, and poly-crystalline thin film silicon, or related materials, devices and large area modules is described. A silane gas impinges upon a hot graphite rod assembly whereas the gas is broken up into its individual constituents, these constituents then depositing on an inert substrate member. The distance between the hot graphite rod assembly and the substrate member is adjustable. A shutter is provided to shield the substrate member as the hot graphite rod assembly is heating up. The hot graphite rod assembly contains a plurality of mutually parallel and coplanar rods that are parallel to the plane of the substrate member, and the hot graphite rod assembly and/or the substrate is oscillated in a direction generally normal to the direction in which the rods extend.

Abstract: A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles (25), (26) with different frequencies. The RF power in the first subcycles (25) is higher in frequency than that in the second subcycles (26). A charge accumulated during the first subcycles (25) in which the RF power of high frequency is applied can be relieved during the second subcycles (26) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles (25).