Abstract: In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

Abstract: An improved wafer holder design is described which has manufacturing and performance advantages over present state-of-the-art holders used in various wafer processing applications. The new wafer holder design incorporates a series of short radial grooves. The grooves extend from the base of a circular channel, which runs along the outside diameter of the substrate wafer recess, to a fixed radial location which varies based on wafer size and thickness. The grooves provide a slight overlap with the wafer to facilitate the free exchange of gases beneath the wafer necessary for wafer loading and unloading operations. The short length of the radial grooves make the wafer holder easier to manufacture and offer more robust performance compared to the present state-of-the-art holders.

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. The manufacturing line can include a plurality of microwave cavities, each of the microwave cavities igniting and sustaining a microwave plasma. Work pieces can be shuttled between the plurality of microwave cavities on a conveyance system that controls the positioning of each of the work pieces.

Abstract: An apparatus and the use of such an apparatus and method for producing microcomponents with component structures are presented which are generated in a process chamber on a substrate according to the LIGA method for example and are stripped from the enclosing photoresist with the help of a cooled remote plasma source.

Abstract: A substrate mounting table includes an electrostatic chuck for attracting and holding a target substrate and a base for holding the electrostatic chuck thereon. The base includes a protruding portion having a large height; and an outer peripheral surface provided around the protruding portion at a position lower than the protruding portion by a preset height. A thermally sprayed film having a thickness equivalent to a height difference between the protruding portion and the outer peripheral surface is deposited on the outer peripheral surface such that the thermally sprayed film becomes continuous with the protruding portion. The electrostatic chuck is formed by installing an electrode between insulating members, and the electrostatic chuck is fixed to the base by using an adhesive to cover a boundary between a top surface of the protruding portion and a surface of the thermally sprayed film.

Abstract: A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: ?/z?85 where ?=(?v/(??f))1/2 where z is the thickness of the electrode film, ? is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, ? is the ratio of a circumference of a circle to its diameter, ? is the magnetic permeability of the electrode film, and ?v is the specific resistance of the electrode film.

Abstract: Electronic devices are formed on a substrate that is advanced stepwise through a plurality of deposition vessels. Each deposition vessel includes a source of deposition material and has at least two shadow masks associated therewith. Each of the two masks is alternately positioned within the corresponding deposition vessel for patterning the deposition material onto the substrate through apertures in the mask positioned therein, and positioned in an adjacent cleaning vessel for mask cleaning. The patterning onto the substrate and the cleaning of at least one of the masks are performed concurrently.

Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Abstract: The invention relates to an arrangement of electronic semiconductor components on a carrier system for treating the semiconductor components with a liquid medium. A semiconductor component is detachably mounted on the carrier system with the active side thereof in such a way that the arrangement comprises a gap at least in the edge region and partially between the semiconductor components and the carrier system. The aim of the invention is to provide a detachable arrangement of electronic semiconductor components on a mechanically stable carrier system for safely handling the semiconductor components during the production process, wherein the capillarity of the gap between the semiconductor components and the carrier system is reduced in a controlled manner, thus preventing the damaging effect of a liquid medium seeping into the gap. To this end, the surface of the carrier system is shaped in such a way that the gap is widened along the entire edge region thereof.

Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.

Abstract: It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield. An etching process apparatus comprising: a vacuum container and a process chamber inside of the vacuum container, in which a sample set in the process chamber held in the vacuum container is etched by the use of plasma; a member held inside of the process chamber; and a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material.

Abstract: A substrate processing apparatus includes a processing chamber, a substrate holding part that holds substrates of required numbers in the processing chamber, a gas supply/exhaust part that supplies or exhausts required gas into the processing chamber, a rotation part that rotates the substrate holding part, a first heating part provided in the substrate holding part so as to face at least an upper surface of each substrate held by the substrate holding part, and a power supply part that supplies power to the first heating part in a non-contact state by electromagnetic coupling.

Abstract: The invention relates to a surface-treatment technique in association with ablation, a surface-treatment apparatus and a turbine scanner. The invention also relates to a method of producing a coating, a radiation transmission line, a copying unit and a printing unit. The invention further relates to an arrangement for adjusting the radiation power of a radiation source in a radiation transmission line and a laser apparatus.

Abstract: The present invention relates to a substrate support that facilitates aligning a substrate and prevents the substrate from being damaged by arc discharge in processing a substrate using plasma, a substrate processing apparatus including the substrate support, and a method of aligning the substrate. A substrate support, which includes a main body on which a substrate is placed and a subsidiary body disposed around the side of the main body and having a slope declining from a position above the main body to the upper side of the main body, is provided, such that it is easy to align the substrate and it is possible to damage due to arc discharge in processing the substrate using plasma.

Abstract: An electrostatic chuck for an apparatus for treating a substrate includes a body; an insulating plate attached onto a top surface of the body, wherein the substrate is disposed on the insulating plate; an electrode in the insulating plate; a temperature controlling unit including a heating unit and a cooling unit under the electrode and in the insulating plate; and a thermal conduction unit disposed between the electrode and the temperature controlling unit.

Abstract: Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations.

Abstract: A plasma processing apparatus 100 used to execute a specific type of processing such as plasma processing on a workpiece by supplying a processing gas into a chamber 110 while applying high-frequency power to generate plasma includes a stage 108 on which the workpiece is placed and a stage supporting unit 124 that holds the stage 108. Bellows 120 and 122 are disposed above and below the stage supporting unit 124 to support the stage 108 in a horizontal state relative to the chamber 110. Thus, a plasma processing apparatus that does not allow the workpiece stage to become tilted, affords ease of maintenance and is capable of stable processing is provided. In addition, the internal spaces at the bellows 120 and 122 are used as an exhausting pipe to achieve efficient and uniform exhaustion of the chamber 110.

Abstract: An apparatus includes a plasma process chamber and a support element capable of supporting a substrate inside the plasma process chamber. At least one plasma control element is placed adjacent to a peripheral portion of the support element such that the plasma control element is capable of influencing a plasma inside the plasma process chamber if an electric field is applied thereto. At least one voltage generator is connected to the plasma control element. The plasma control element is movable inside the process chamber such that it can be set to any of at least two different positions.

Abstract: A method and apparatus for correcting overlay errors in a lithography system. During lithographic exposure, features being exposed on the wafer need to overlay existing features on the wafer. Overlay is a critical performance parameter of lithography tools. The wafer is locally heated during exposure. Thermal expansion causes stress between the wafer and the wafer table, which will cause the wafer to slip if it exceeds the local frictional force. To increase the amount of expansion allowed before slipping occurs, the wafer chuck is uniformly expanded after the wafer has been loaded. This creates an initial stress between the wafer and the wafer table. As the wafer expands due to heating during exposure, the expansion first acts to relieve the initial stress before causing an opposite stress from thermal expansion. The wafer may be also be heated prior to attachment to the wafer chuck, creating the initial stress as the wafer cools.

Abstract: An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing.

Abstract: A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate.

Abstract: A structure having a pattern is manufactured. An elastically deformable process target is elastically deformed in an inplane direction from a first state. A first pattern is formed on the process target deformed. The elastically deformed process target is made close to or returned to the first state, thereby to form a second pattern having a size and a shape at least one of which differs from those of the first pattern.

Abstract: In one embodiment, a substrate centering apparatus for centering a substrate on a substrate support is provided. In one embodiment, the invention comprises an apparatus that is mounted to an underside of a substrate support and includes a lever that projects upward through a support surface of the substrate support. The lever may be biased toward a center of the substrate support to contact an edge of a substrate. A mechanism is coupled to the lever and moves the lever radially outward to release the substrate. In one embodiment, the mechanism is actuated as the substrate support moves downward to a position that facilitates substrate handoff.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.

Abstract: An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck.

Abstract: A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes a notched deposition ring. In another embodiment, a process kit includes a cover ring configured to engage the notched deposition ring. In another embodiment, a process kit includes an annular deposition ring body having inner, outer, upper and bottom walls. A trough is recessed into an upper surface of the body between the upper and inner walls. A recessed surface is formed on a lower surface of the body between the bottom and inner walls. A notch extends inward from the body to catch deposition material passing through a notch of the substrate being processed.

Abstract: A plasma processing apparatus includes a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas, a substrate mounting table, installed in the processing container, for mounting the substrate thereon, and a gas supplying unit for supplying the processing gas into the processing container. Here, the substrate mounting table includes a mounting table main body formed of an insulator component. Here, an electrode is embedded inside the mounting table main body, a high frequency power supply for supplying a high frequency power is connected to the electrode, and one or more exposed electrodes are installed to be exposed toward the outside of the mounting table main body and electrically connected to the electrode in the mounting table main body.

Abstract: A method for manufacturing a microstructure includes treating a surface of the microstructure having a wall body with a liquid, supplying a material activating the surface of the liquid to the surface of the microstructure, and drying the surface of the microstructure.

Abstract: Substrate processing apparatus 100 includes supporting table 103 for not only supporting a target substrate W but also heating the target substrate W; processing chamber 101 having the supporting table 103 disposed therein; and gas supply unit 102 for supplying a processing gas into the processing chamber 101. The processing gas includes at least one of organic acid ammonium salt, organic acid amine salt, organic acid amide and organic acid hydrazide.

Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract: The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract: A substrate supporting apparatus includes a plate member of an aluminum alloy having a flat upper surface, bottomed pits formed in the plate member, and spacer members held in the pits, individually. The spacer members are sapphire spheres. The diameter of each spacer member is a little smaller than that of each pit. The upper end of each spacer member projects from the upper surface of the plate member. A spot facing is formed in a region that includes the open edge portion of the pit. A bending portion which is obtained by plastically deforming the open edge portion of the pit toward the spacer member is formed on a bottom surface of the spot facing. A V-shaped groove is formed behind the bending portion.

Abstract: A deposing ring and cover ring for extending process components life and performance for process chambers are disclosed. A deposition ring including a protruding surface is positioned in spaced apart relation with a cover ring including a depressed surface. Indicated surfaces of the deposition ring and cover ring may be covered with a coating to improve adhesion of deposited materials.

Abstract: A vacuum processor includes: a chamber; a pump which keeps the inside of the chamber in a vacuum state by; a connection part which connects the chamber with the pump and is formed with a gas passage therein. An inner wall of the connection part is provided with a capturing part capturing particles in the passage. The capturing part has a fibrous substance facing the passage and disposed along the passage. The fibrous substance is provided to capture particles. A peripheral part of the woven cloth of the fibrous substance is folded to a back side of the unwoven cloth and the front end of the peripheral part of the woven cloth is interfolded to the back side of the unwoven cloth.

Abstract: A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.

Abstract: A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing.

Abstract: Embodiments of the invention generally provide a substrate support assembly. In one embodiment, a substrate support assembly includes a substrate support plate, a thermal regulating plate coupled in a spaced-apart relation to the substrate support plate and a main actuator coupled in a spaced-apart relation to the thermal regulating plate. The main actuator is adapted to move the substrate support plate laterally. The substrate support assembly is configured to limit the thermal influence of the main actuator on a substrate positioned on the substrate support plate.

Abstract: A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such materials which can interfere with semiconductor wafer processing.

Abstract: The present invention relates to an apparatus for plasma-processing of flexible printed circuit boards (FPCBs). The apparatus includes a plasma-discharging chamber, two electrodes arranged in the chamber for generating plasma in the chamber, a frame, and two elongated holding arms disposed on the frame. The frame includes a number of spaced parallel first bars and a number of spaced parallel second bars. The first bars intersecting with the second bars. The elongated holding arms are substantially parallel with each other. Each of the arms has an inner sidewall. The inner sidewalls of the elongated holding arms are opposite to each other. An elongated recess is defined in each of the inner sidewalls proximate to the frame. The apparatus can ensure uniform plasma-processing and protect FPCBs from being burned.

Abstract: A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.

Abstract: An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas.

Abstract: An inner medium passage 17 is formed between an inner peripheral surface 12a of an annular inner electrode 11 and an annular inner passage formation member 15 received in the electrode 11. An annular first seal member 18 is interposed between upper peripheral sides of the electrode and the member 15. An annular second seal member 19 is interposed between a bottom flat surface 15b of the member 15 and a flange part 13 of the electrode 11. Bottom peripheral sides of the electrode 11 and the member 15 are confronted with each other substantially without the interposition of any gap. The inner electrode 11 is surrounded by an annular outer electrode 21 via a gap 1p as a gas passage in which a processing gas is plasmatized. An outer medium passage 27 is formed between an outer peripheral surface 22a of the electrode 21 and an annular outer passage formation member 25. Third and fourth seal member 28, 29 are interposed between the electrode 21 and the member 25 respectively.

Abstract: Apparatus and methods for improving treatment uniformity in a plasma process. The sacrificial body, which is extends about an outer peripheral edge of the workpiece during plasma processing, is composed of a plasma-removable material. The sacrificial body may include multiple sections that are arranged to define a circular geometrical shape. The sacrificial body functions to increase the effective outer diameter of the workpiece, which operates to alleviate detrimental edge effects intrinsic to plasma processing by effectively reducing the etch rate near the outer peripheral edge of the workpiece.

Abstract: An apparatus with an edge ring configured to surround a perimeter of a semiconductor wafer in a semiconductor process, the edge ring having a plurality of protrusions located on an upper surface of the edge ring, the protrusions capable of preventing the semiconductor wafer from moving outside the bounds of a process plane. There is also an apparatus having a semiconductor process chamber and an electrostatic chuck, a semiconductor wafer, and an edge ring. There is also a method including providing a semiconductor process chamber, semiconductor wafer disposed within the semiconductor process chamber, and an edge ring, the edge ring having a plurality of protrusions located on an upper surface of the edge ring, the protrusions capable of preventing the semiconductor wafer from moving outside the bounds of a process plane. The method also includes performing an etch process on the semiconductor wafer.

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: A substrate processing system as illustrated at (1). A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and/or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.