Abstract: There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower mem

Abstract: Various embodiments include apparatuses to raise and lower substrates, as used in the semiconductor and allied industries, toward or away from a substrate-holding mechanism (e.g., such as an electrostatic chuck (ESC). In a specific embodiment, a substrate lift-mechanism includes a number of pins to position the substrate above a substrate-holding device. Mid-position sensors are respectively coupled to a corresponding pin. The mid-position sensors monitor an intermediate position of the corresponding pin between a maximum position and a minimum position. Other apparatuses and systems are disclosed.

Abstract: To detach a substrate from a table without damaging the substrate. According to Embodiment 1, provided is a substrate processing apparatus including a table to hold a substrate, a plurality of lift pins that are arranged at periphery of the table and configured to arrange or separate the substrate on or from the table and to be movable in a direction perpendicular to a surface of the table, a drive mechanism that includes a motor to move the lift pins in the direction perpendicular to the surface of the table, and a control device that is configured to control the drive mechanism. The control device is configured to be capable of moving the lift pins at a first speed and at a second speed different from the first speed.

Abstract: An end effector includes a body, a first tine, and a second tine. The body includes first, second, and third substrate support pads, the first substrate support pad defines a first height, the second substrate support pad defines a second height less than the first height, and the third substrate support pad defines a third height equal to the first height. The first tine includes fourth and fifth substrate support pads, the fourth substrate support pad defines a fourth height equal to the second height, and the fifth substrate support pad defines a fifth height equal to the first and third heights. The second tine includes sixth and seventh substrate support pads, the sixth substrate support pad defines a sixth height equal to the first, third, and fifth heights, the seventh substrate support pad defines a seventh height equal to the second and fourth heights.

Abstract: Various embodiments of wafer processing systems including batch load lock apparatus with temperature control capability are disclosed. The batch load lock apparatus includes a load lock body including first and second load lock openings, a lift assembly within the load lock body, the lift assembly including multiple wafer stations, each of the multiple wafer stations adapted to provide access to wafers through the first and second load lock openings, wherein the batch load lock apparatus includes temperature control capability (e.g., heating or cooling). Batch load lock apparatus is capable of transferring batches of wafers into and out of various processing chambers. Methods of operating the batch load lock apparatus are also provided, as are numerous other aspects.

Abstract: A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer handoff plane. The lower chamber has at least one lowest wafer support that defines a second wafer handoff plane where the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane.

Abstract: A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.

Abstract: An end effector device attached to a tip end portion of a robot arm includes a plurality of support units provided on a blade. Each of the support units includes: a plurality of nail pieces configured to support peripheral portions of a plurality of semiconductor wafers such that the semiconductor wafers are parallel to one another and spaced apart from one another; and a pitch changing mechanism configured to change upper-lower intervals of the nail pieces. The pitch changing mechanism includes: a coil spring configured to support the plurality of nail pieces such that the plurality of nail pieces are spaced apart from one another in an upper-lower direction and elastically deform in the upper-lower direction; and an operating mechanism configured to cause the coil spring to elastically deform in the upper-lower direction. The operating mechanism includes a piston pin fitted in the coil spring to move up and down.

Abstract: A plasma processing chamber having capacitive and inductive coupling of RF power. An RF power source is connected to an inductive coil and to a top electrode via a variable capacitor to control the ratio of power applied to the coil and electrode. The bottom electrode, which is part of the chuck holding the substrates, is floating, but has parasitive capacitance coupling to ground. No RF bias is applied to the chuck and/or the substrate, but the substrate is chucked using DC power. In a system utilizing the chamber, the chuck is movable and is loaded with substrates outside the chamber, enter the chamber from one side for processing, exit the chamber from an opposite side after the processing, and is unloaded in an unloading chamber. The chuck is then transported back to the loading chamber. Substrates are delivered to and removed from the system using conveyor belts.

Abstract: When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

Abstract: A rotating type thin film deposition apparatus having an improved structure that allows continuous deposition, and a thin film deposition method used by the rotating type thin film deposition apparatus are provided. The rotating type thin film deposition apparatus includes a deposition device; a circulation running unit that runs a deposition target on a circulation track via a deposition region of the deposition device; and a support unit that supports the deposition target and moves along the circulation track. Thin layers can be precisely and uniformly formed on the entire surface of a deposition target, and since deposition is performed while a plurality of deposition targets move along a caterpillar track, a working speed is faster compared to a method involving a general reciprocating motion, and the size of the thin film deposition apparatus can be reduced.

Abstract: A plasma processing apparatus including a wafer stage disposed in a processing chamber arranged in a vacuum chamber to hold a wafer as a processing object on a surface of the wafer stage, to conduct processing for the wafer by use of plasma, wherein the wafer includes grooves, each of the grooves extending from a central portion of a surface on which the wafer is held to an outer circumferential edge of the surface, the grooves including openings at the outer circumferential edge, and the processing is conducted in a state in which the wafer is held at predetermined height over an upper surface of the wafer stage.

Abstract: A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base material, and can improve yield and productivity. The plasma processing apparatus includes a processing chamber, a lower electrode, an upper electrode, and a plurality of lifter pins for supporting a substrate to be processed. Each of the lifter pins includes a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part.

Abstract: A susceptor includes a first step portion on which a wafer is placed; and a convex portion placed on a bottom surface of the first step portion, wherein a void is formed between a top surface of the convex portion and a rear surface of the wafer in a state in which the wafer is placed on the top surface of the convex portion.

Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.

Abstract: A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.

Abstract: A substrate processing unit 14 includes processing modules 2 each performing a process on a substrate, and a substrate transfer device 121 is provided between a mounting unit 11 and the processing modules. A parameter storage unit 3 stores sets of transfer parameter 33 where an operating speed of the substrate transfer device corresponds to a processing number of substrates per a unit time. A parameter selecting unit 4 compares a processing number of substrates per a unit time determined based on a recipe 31 corresponding to the process, with those corresponding to the transfer parameters and selects a transfer parameter corresponding to the minimum processing number of substrates among the processing numbers of substrates equal to or larger than that determined based on the recipe. A transfer control units 151 to 153 control the substrate transfer device based on a set value of the selected transfer parameter.

Abstract: A wafer processing chamber and a method for transferring wafer in the same are provided to prevent the arcing issue. In the embodiments, a wafer is positioned on the focus ring, and a lifting apparatus is provided outside the wafer such as corresponding to the focus ring. The lifting apparatus of the embodiment could be positioned below or above the focus ring. The wafer and the focus ring are lifted together by the lifting apparatus, and transferred together by a transferring unit.

Abstract: A plasma processing system with improved component temperature control is disclosed. The system may include a plasma processing chamber having a chamber wall. The system may also include an electrode disposed inside the plasma processing chamber. The system may also include a support member disposed inside the plasma processing chamber for supporting the electrode. The system may also include a support plate disposed outside the chamber wall. The system may also include a cantilever disposed through the chamber wall for coupling the support member with the support plate. The system may also include a lift plate disposed between the chamber wall and the support plate. The system may also include thermally resistive coupling mechanisms for mechanically coupling the lift plate with the support plate.

Abstract: A sputtering device includes a chamber; and a substrate transferring unit for loading a substrate into, or unloading the substrate from the chamber, the substrate transferring unit including a gas injection assembly forming a gas cushion between the substrate and an upper surface of the substrate transferring unit.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction.

Abstract: An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate.

Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.

Abstract: The invention relates to an apparatus (1) for producing a reflection-reducing layer on a surface (21) of a plastics substrate (20). The apparatus comprises a first sputtering device (3) for applying a base layer (22) to the surface (21) of the plastics substrate (20), a plasma source (4) for plasma-etching the coated substrate surface (21), and a second sputtering device (5) for applying a protective layer (24) to the substrate surface (21). These processing devices (3, 4, 5) are arranged jointly in a vacuum chamber (2), which has inlets (8) for processing gases. In order to move the substrate (20) between the processing devices (3, 4, 5) in the interior of the vacuum chamber (2), a conveying apparatus (10) is provided which is preferably in the form of a rotary table (11).—Furthermore, the invention relates to a method for producing such a reflection-reducing layer on the surface (21) of the plastics substrate (20).

Abstract: A substrate treatment apparatus includes: a treatment chamber provided therein with a chemical solution treatment area for treating a substrate with a chemical solution and a drying treatment area provided above the chemical solution treatment area for drying the substrate; a substrate holding member vertically movably provided in the treatment chamber for holding the substrate; and a lifting mechanism vertically moving the substrate in the range between the chemical solution treatment area and the drying treatment area.

Abstract: There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

Abstract: In a vacuum processing apparatus, a substrate chuck mechanism member is attached to a substrate holder provided in a vacuum processing chamber, includes a shaft member, first and second coil springs that are provided at the two ends, respectively, of the shaft member, and a substrate chuck plate provided at the end of the shaft member, and is additionally attached to the substrate holder using the substrate chuck plate by elastic biasing of the first coil spring. The holding state of the substrate on the substrate holder is changed by the expansion/contraction actions of the first and second coil springs in accordance with the reciprocal movement of the substrate holder.

Abstract: The invention relates to a deposition device for comprising a processing space with a substrate support disposed therein, as well as several lift pins (50), which can be moved into and out of the plane of the substrate support to assist in introducing a semiconductor substrate into the processing space and removing it therefrom. The device is characterized in that the contact surface (52) of the lift pin (50) that is to be brought into contact with the semiconductor substrate and/or the substrate support is provided with a material layer (54) which has a lower hardness than the semiconductor substrate and/or the substrate support. This eliminates the risk of damage being caused to the substrate and/or to the substrate support as a result of said substrate shifting undesirably upon being lifted from and lowered onto the substrate support (susceptor). Thus there is no risk of scratches being formed and of particles being released, which might adversely affect the semiconductor manufacturing process.

Abstract: A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

Abstract: A substrate processing apparatus includes a vacuum container, a rotary table to rotate in the vacuum container, a substrate placement member mounted on the rotary table in a detachable manner, the substrate placement member and the rotary table together providing a recess in which a substrate is placed on an upper side of the rotary table, and the substrate placement member constituting a bottom surface in the recess on which the substrate is placed, a position regulating unit provided at least one of the rotary table and the substrate placement member to regulate a movement of the substrate caused by a centrifugal force during rotation of the rotary table, a reactant gas supply unit to supply reactant gas to the upper side of the rotary table, and a vacuum exhaust unit to exhaust the vacuum container.

Abstract: An apparatus 101 for depositing a thin-film onto a surface of a substrate 113 using precursor gases G1, G2 is disclosed. The apparatus 101 comprises i) a supporting device 111 for holding the substrate 113; and ii) a spinner 105 positioned adjacent to the supporting device 111. Specifically, the spinner 105 includes a hub 106 for connecting to a motor, and one or more blades 201 connected to the hub 106. In particular, the one or more blades 201 are operative to rotate around the hub 106 on a plane to drive a fluid flow of the precursor gases G1, G2, so as to distribute the precursor gases G1, G2 across the surface of the substrate 113.

Abstract: A substrate processing apparatus includes a heating unit that heats a processing chamber that processes a plurality of substrates and that quickly cools the processing chamber after the processing. The heating unit includes a body having an intake port and an exhaust port, one or more heaters located inside the body, a cooler connected to the intake port of the body, an exhaust pump connected to the exhaust port of the body, and a controller controlling the cooler. The substrate processing apparatus includes a boat in which a plurality of substrates are stacked, a processing chamber providing a space in which the substrates are processed, a transfer unit carrying the boat into or out of the processing chamber, and the heating unit located outside the processing chamber.

Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a load port on which a carrier accommodating a plurality of substrates to which a back-ground wafer is attached to a mounting tape fixed to a frame ring is placed, a plasma treatment unit supplying plasma to treat a top surface of the wafer, and a substrate transfer unit transferring the substrate between the carrier and the plasma treatment unit.

Abstract: A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

Abstract: A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

Abstract: A thermally conductive sheet is used between a mounting table for mounting thereon a target substrate and an annular focus ring mounted on the mounting table to surround a circumferential peripheral portion of the target substrate. Further, the mounting table includes therein a cooling unit and is disposed in a depressurized accommodating chamber for accommodating therein the target substrate. The thermally conductive sheet has a non-adhesive layer on each of one or more surfaces thereof.

Abstract: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.

Abstract: Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit.

Abstract: Apparatus and methods for plasma processing workpieces of different diameters. The apparatus includes a lift plate having an outer perimeter, an opening inside of the outer perimeter, and a gap extending between the opening and the outer perimeter. The lift plate includes annular rims of different inner diameters and that are configured to respectively support the first and second workpieces.

Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.

Abstract: A coating apparatus includes a base, actuators, separating boards and a gas guide grill. The base includes a carrying surface for supporting a workpiece. The base defines recesses on the carrying surface. The actuators include shafts rotatably located in the recesses correspondingly, and motors for driving the shafts. The separating boards are located above the carrying surface and securely connected to the shafts. The separating boards define chambers therebetween. The separating boards are capable of being rotated toward the carrying surface by the shafts. The gas guide grill is located above the base. The gas guide grill defines gas guide holes corresponding to the chambers respectively.

Abstract: Improved systems relating to modifying the surface properties of at least one material using plasma-based processes. Application of methods and apparatus of the system are particularly useful in semiconductor processing.

Abstract: A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers.

Abstract: A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Abstract: A lift pin driving device and a manufacturing apparatus having the device are provided. The device includes drive unit including a single drive motor that drives a pin plate, a plurality of timing belts and a plurality of pulleys. The pin plate, which supports a plurality of lift pins thereon, is moved by the pulleys, operated in conjunction with the motor through the timing belts. A tensioner controls a tension of the timing belts. The tensioner may be controlled to provide precise rectilinear movement without leaning, and to prevent the timing belts from sagging. The device efficiently controls the tension of the timing belts and allows the lift pins to be precisely moved upwards or downwards such that a substrate positioned thereon may maintain a horizontal position while being moved upwards or downwards.

Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.

Abstract: A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

Abstract: A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: A coating device includes two workspaces, two first slide rails, two second slide rails, two transporting loops, a number of rotating platforms, and a number of loading poles. The first slide rails are respectively fixed on the bottoms of the workspaces. The second slide rails are respectively fixed on the tops of the workspaces. The transporting loops are movably positioned on the first slide rails respectively. The rotating platforms are rotatably positioned on the transporting loops and capable of being driven by the transporting loops to rotate and slide along the first slide rails. The loading poles are positioned between the rotating platforms and the second slide rails, and are used for holding substrates. The loading poles are capable of being transported from one workspace to another workspace.