Abstract: Incorporation of a sensor, such as an optical or laser based sensor, into a wafer edge processing unit, such as a WEE unit or mechanism. This sensor enables the WEE unit to be referenced to the wafer edge. Specifically, the sensor can be used to place a WEE unit in a fixed but accurate location at the beginning of the wafer edge expose process. Another approach is to have the WEE drive controller actively follow the edge of the wafer as it rotates during the WEE process, which has the advantage of compensating for any wafer centering errors as well as diameter and placement errors. In yet another approach, the edge sensor is used to sense and track the edge of a previous layer WEE pattern. The sensor can also facilitate the measuring of a distance from a wafer edge to a WEE edge feature.

Abstract: Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.

Abstract: The substrate processing apparatus according to the present invention is aimed to stably and efficiently perform a deposition process on a substrate W. The substrate processing apparatus supports the substrate W in a position facing a heater portion and thus rotates a holding member holding the substrate W. Furthermore, the heating portion houses a SiC heater and a heat reflecting member in an internal portion of a quartz bell jar made of transparent quartz, and depressurizes an internal space of a processing vessel and an internal space of the quartz bell jar at the same time; thereby allowing the thickness of the quartz bell jar to be thinner, and thus improving thermal conductivity of heat from the SiC heater and preventing contamination by the SiC heater.

Abstract: Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.

Abstract: Provided is a spin head. Chuck pins, installed at a support plate to support the lateral surface of a substrate, are moved along the perpendicular direction to the radial direction of the support plate. The effect of centrifugal force applied to the chuck pins during the rotation of the support plate is minimized to support a substrate stably.

Abstract: On the top surface of a substrate, an atmosphere blocker plate, of which plan size is equal or larger than the substrate size, is disposed opposing to the top surface of the substrate. In the rim portion of the atmosphere blocker plate, a vertical through hole is formed so that a nozzle can be inserted into the hole. Nozzle move mechanism moves the nozzle to insert the nozzle to the through hole and position it to the opposing position that is opposed to the top rim portion of the substrate and to the retract position that is away from the atmosphere blocker plate. Processing liquid is supplied from the nozzle, which is positioned to the opposing position, to the top rim portion of the substrate.

Abstract: A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft.

Abstract: A susceptor structure capable of discharging the atmosphere containing dopant species and filling a wafer pocket, without causing a large quantity of a raw material gas to flow from the front surface side of a susceptor to under the susceptor. The susceptor having an approximately round disk shape and having a concave wafer pocket on the front surface thereof for accommodating a wafer, comprises a gas inlet notch passing through from a side surface or a rear surface of the susceptor to the wafer pocket, and a gas discharge notch passing through from the wafer pocket to the side surface or the rear surface of the susceptor. A carrier gas is introduced from the gas inlet notch of the susceptor into the wafer pocket, as shown by arrow b and the gas present inside the wafer pocket is discharged from the gas discharge notch, as shown by arrow c, by using the rotation of the susceptor during epitaxial film growth.

Abstract: The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

Abstract: Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

Abstract: A system for of aligning a mask to a substrate comprising: a fixture for holding the mask and the substrate in fixed positions relative to each other; means for holding the substrate, the means for holding the substrate protruding through openings in a table and the fixture, the means for holding fixedly mounted on a stage, the stage moveable in first and second directions and rotatable about an axis relative to the table; means for affixing the fixture containing the mask and the substrate to the table; means for controlling the means for temporarily affixing so as to generate a uniform force around a perimeter of the fixture to effectuate the temporarily affixing; means for aligning the mask to the substrate, the means for aligning controlling movement of the stage in the first and second directions and rotation about the axis; and means for fastening the fixture together.

Abstract: A method of cooling a complex electronic system includes preventing system air from passing through a front side and a rear side of a server system main board, organizing a plurality of electronic segments of the server system main board, providing cool air horizontally to the server system main board through a cool air intake provided at a position located underneath the front side and at a bottom side of the server system main board, using the cool air intake to provide the cool air to a plurality of cooling segments that redirect the cool air vertically at a 90° angle, and using a hot air exhaust after the hot air reaches the top side of the server system main board to redirect the hot air horizontally at a 90° angle and exhaust the hot air.

Abstract: A substrate treatment apparatus includes: a treatment chamber provided therein with a chemical solution treatment area for treating a substrate with a chemical solution and a drying treatment area provided above the chemical solution treatment area for drying the substrate; a substrate holding member vertically movably provided in the treatment chamber for holding the substrate; and a lifting mechanism vertically moving the substrate in the range between the chemical solution treatment area and the drying treatment area.

Abstract: An apparatus and a method for removing a coating film capable of stable treatment for removing unnecessary coating film at a substrate edge are provided. A substrate is clamped by approach stages from front and rear directions on a chuck, and fixed when accurate registration thereof is achieved. Then, the substrate edge is moved back and forth together with the chuck and the approach stage, so that the edge of the substrate is introduced in a space between an upper piece and a lower piece of a fixed arm portion. While the substrate is being moved, a solvent is fed from a nozzle portion onto a surface thereof and a purge gas is fed through a purge gas feeding pipe, so as to remove the coating film from the surface of the substrate by sucking and discharging the solvent and dissolved coating film through a discharge pipe.

Abstract: The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

Abstract: In a substrate processing apparatus that supports substrates W by a plurality of holding members of a rotor to process the substrates W rotated by the rotor, any one of the holding members is provided with press devices 130 to apply pressures on the peripheries of the substrates W. Each press device 130 has an abutting part 160 for contact with the periphery of the substrate W, a cylinder mechanism 161 for moving the abutting part 160 between a position in contact with the periphery of the substrate W and another position apart from the periphery of the substrate W and a deformable part 162 elastically deformed by the movement of the abutting part 160 to isolate the cylinder mechanism 161 from an atmosphere around the substrates W. Consequently, it is possible to provide the substrate processing apparatus and method that do not cause a diaphragm to be deformed excessively.

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Abstract: Methods of manufacturing a semiconductor device, apparatus and etch chamber for the manufacturing of semiconductor devices are provided. Embodiments are related to the rotating of a semiconductor substrate round an axis perpendicular to its surface during etching or reactive deposition processes, and irradiating a semiconductor substrate non-uniformly during etching or reactive deposition processes.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: In an embodiment, a spinning apparatus includes a spin table on which an object to be etched is placed, a rotation unit rotating the spin table, and a nozzle unit including a center nozzle, disposed on the central portion of the spin table, and at least one side nozzle, disposed on an edge of the spin table. Etching uniformity is improved over the conventional art because an etching chemical is distributed more evenly by the nozzle unit as the object to be etched is rotated. An embodiment may also include an exhaust to remove excess etching chemical.

Abstract: Provided is a spin head for supporting a substrate. The spin head includes a rotatable body, and chuck pins protruding upward from the body and configured to support an edge of a substrate placed at the body when the body is rotated. Each of the chuck pins includes a vertical rod vertically disposed at the body, and a support rod extending from a side of the vertical rod and configured to make contact with the edge of the substrate placed at the body when the body is rotated. When the substrate is rotated, the vertical rod is spaced apart from the edge of the substrate. The contact portion includes a streamlined side surface. The support rod includes a contact portion. The contact portion tapers toward the end of the support rod when viewed from the top of the support rod.

Abstract: Provided is a spin head for supporting and rotating a substrate. The spin head includes a body, chuck pins disposed at the body and movable between supporting positions and rest positions, and a chuck pin moving unit configured to move the chuck pins straight. The chuck pins supports a substrate at the supporting positions and provides a substrate loading/unloading space at the rest position. The chuck pin moving unit includes movable rods fixed to the chuck pins, a rotatable cam including protrusions on an outer surface thereof so as to move the chuck pins from the supporting positions to the rest positions, and chuck pin return units respectively applying forces to the movable rods so as to move the chuck pins individually from the rest positions to the supporting positions. The chuck pin moving unit further includes contact maintaining members.

Abstract: A plasma processing apparatus includes a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas, a substrate mounting table, installed in the processing container, for mounting the substrate thereon, and a gas supplying unit for supplying the processing gas into the processing container. Here, the substrate mounting table includes a mounting table main body formed of an insulator component. Here, an electrode is embedded inside the mounting table main body, a high frequency power supply for supplying a high frequency power is connected to the electrode, and one or more exposed electrodes are installed to be exposed toward the outside of the mounting table main body and electrically connected to the electrode in the mounting table main body.

Abstract: A vapor phase growth apparatus has a plurality of rotation susceptors to hold the semiconductor wafer, and a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing. The plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis. The outermost end of rotation susceptor is substantially aligned with the outermost end of revolution susceptor and the pinion gear is located directly above the bearing.

Abstract: An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Abstract: A method for dispensing a chemical, such as an edge bead removal solvent, onto a semiconductor wafer comprising the steps of dispensing the chemical selectively onto the wafer and applying a suction to the area immediately surrounding the location at which the chemical is dispensed onto the wafer. Preferably, the suction is applied substantially simultaneously with the dispensing of the chemical. One specific version of the invention provides an edge bead removal system wherein suction is applied to the area immediately surrounding the solvent dispensing nozzle to remove dissolved coating material and excess solvent from the wafer. In one aspect of this system, an apparatus for removing the edge bead includes a mechanism for dispensing a solvent selectively onto the edge of the wafer, and a mechanism surrounding the dispensing mechanism for vacuuming excess solvent and dissolved coating material from the edge of the wafer.

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: A method and device for ablation of thin layers on the rim region of the surface of a plane substrate coated with a thin film. The rim region runs along the edge or edges of the substrate, and the thin layers should be ablated in at least two, not necessarily unconnected areas of the rim region along edge pieces not parallel to one another. A laser beam is pointed toward an ablation area. The areas of the rim region to be ablated are guided through the area so that in a plane of the surface of the substrate, during the whole ablation process, there is basically a constant distance in the space that lies partly in the ablation area and has its starting point outside the substrate surface and its end point within the substrate surface.

Abstract: The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus.

Abstract: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

Abstract: An apparatus for performing a semiconductor process on a target substrate (W) includes a lifting mechanism (48) disposed in a worktable (38) to assist transfer of the target substrate. The lifting mechanism includes a lifter pin (51) configured to support and move up and down the target substrate, and a guide hole (49) configured to guide the lifter pin being moved up and down. The guide hole includes a main hole portion (49a) which extends through the worktable from its upper surface to lower surface, and an extended hole portion (49b) which extends into an extension sleeve (66) which projects downward from the lower surface of the worktable to correspond to the main hole portion.

Abstract: A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry.

Abstract: A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Abstract: A liquid processing apparatus includes containers 26, 27, 26a, 26b surrounding processing chambers 51, 52 for accommodating a plurality of wafers W and nozzles 54, 56 for supplying a processing liquid to the substrates W in order to perform a liquid process. The nozzles 54, 56 are respectively equipped with a plurality of ejecting orifices 53, 55 capable of ejecting the processing liquid in a plane manner, allowing the substrates W to be processed uniformly and effectively.

Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Abstract: A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Abstract: A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

Abstract: According to the present invention, when performing spin treatment on a square wafer for a solar battery, it is possible to prevent the treatment medium, which is caused to flow down onto the surface of the wafer and scattered to the outside of the wafer from the four sides thereof in droplets, from reaching the back surface of the wafer.

Abstract: A chemical vapor deposition apparatus is provided. The chemical vapor deposition apparatus includes a susceptor support base and a susceptor, and configured to rotate the susceptor with a rotary shaft, a gap as wide as about 1 mm or more is provided along the boundary between the support base and the perimeter of the susceptor to prevent Ga from forming bridges between the support base and the susceptor during growth of III-V compound semiconductors such as GaN, thereby preventing disturbance of rotation.

Abstract: A substrate holding and rotating apparatus includes: a spin base connected to a rotary shaft and rotatable therearound; holding members attached to the spin base and displaceable between holding positions at which the holding members come in contact with the peripheral edge of the substrate such that the holding members are capable of holding the substrate, and retreat positions at which the holding members are retreated from the holding positions; a holding members drive mechanism for driving the holding members between the holding positions and the retreat positions; and a rotation regulating mechanism arranged to be brought, in association with the operation of the holding-member drive mechanism, into a rotation allowing state where the spin base is allowed to be rotated and into a rotation regulating state where the rotation of the spin base is regulated.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: A semiconductor device fabricating system 1 includes a casing 10, processing units 12, 13 and 14, for carrying out semiconductor device fabricating processes, disposed inside the casing, and platforms 15, 16 and 17 set outside the casing. The platforms are foldable. Spaces required by the platforms can be reduced and the footprint of the semiconductor device fabricating system can be reduced by folding the platforms.

Abstract: A thin film removing device and a thin film removing method are capable of removing straight parts of a thin film formed on a square substrate from corners of the substrate, and of suppressing the formation of mists. An approach stage 20 having flat stage plates 23 capable of being disposed substantially flush with the surface of a substrate M mounted on a support table 22 is positioned close to the substrate M mounted on the support table 22. Removing nozzles 30 jet a solvent toward edge parts of the substrate M and suck a solution produced by dissolving part of the resist in the solvent while the removing nozzles 30 are moved along side edges of the substrate M and the approach stage 20 disposed close to the substrate M. Thus, the removing nozzles 30 jet the solvent uniformly over the edge parts and corners of the substrate M and suck the solution without changing modes of jetting the solvent and sucking the solution.

Abstract: A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

Abstract: A liquid processing apparatus includes containers 26, 27, 26a, 26b surrounding processing chambers 51, 52 for accommodating a plurality of wafers W and nozzles 54, 56 for supplying a processing liquid to the substrates W in order to perform a liquid process. The nozzles 54, 56 are respectively equipped with a plurality of ejecting orifices 53, 55 capable of ejecting the processing liquid in a plane manner, allowing the substrates W to be processed uniformly and effectively.

Abstract: Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (36a-n) of material to be treated and having an insulating and chemically resistant plate (40) arranged above it, and a diffuser (54) consisting of a plurality of outlet pipes (106a-f) mounted on a cap (52) fixed to an upper opening (50) of the belljar (14).

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.