Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: A semiconductor substrate support apparatus comprises a support chuck having at least one chuck manifold extending through the support chuck, and a rotatable shaft coupled to the support chuck. The shaft has at least one shaft conduit disposed therein and extends through the support chuck. A housing circumscribes the shaft and has a housing conduit adapted for connection to a gas source. A plurality of seals are disposed between the shaft and the housing and thereby define a radial passageway between the at least one shaft conduit and the housing conduit for providing a backside gas to a backside of a wafer disposed on the rotating support chuck.

Abstract: An article which is being processed with plasma is moved during plasma processing so that the motion of the article comprises at least a first rotational motion, a second rotational motion, and a third rotational motion which occur simultaneously. The apparatus that moves the article comprises a first arm rotatable around a first axis, a second arm rotatably attached to the first arm and rotating the article around a second axis, and a rotational mechanism for inducing a rotational motion of the article in addition to, and simultaneously with, the rotation of the first and second arms.

Abstract: An apparatus for plasma treating workpieces in vacuum comprises a stack of plasma chambers (20). Handling of workpieces to and from the plasma chambers of the stack is performed in parallelism by one handling device and through lateral handling openings of the plasma chambers. The handling device is rotatable around an axis parallel to the handling openings of the plasma chambers and comprises transport means simultaneously movable radially with respect to the axis of rotation towards and from the handling openings.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing defines a substantially closed processing chamber therein in which one or more processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. A dividing member at the edge of the spinning workpiece separates flow of fluids off of the top and bottom surfaces of the workpiece.

Abstract: A method and apparatus for implementing the method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process the method providing at least one semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the at least one semiconductor wafer polishing surface according to a CMP process having a polishing pad surface contacting the at least one it semiconductor wafer polishing surface at least a portion of the polishing pad in electrically conductive communication with a conductive polishing platen; and, providing at least one electrically conductive pathway from the conductive polishing platen.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is asymmetric so that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles are provided for loading and unloading the plasma processing system. One of the shuttles stands empty waiting to unload the processed articles from the system, while the other shuttle holds unprocessed articles waiting to load them into the system.

Abstract: Deposit is removed by supplying chemical solution on a semiconductor substrate with the semiconductor substrate kept rotating. Next, the chemical solution supply is shut off while rotation of the semiconductor substrate being maintained, which allows to scatter the chemical solution on the semiconductor substrate. Next, water is supplied on the semiconductor substrate with the semiconductor substrate kept rotating. This results in washing the semiconductor substrate. The water supply is shut off while rotation of the semiconductor substrate being maintained, which allows to scatter the water on the semiconductor substrate. Then, these processes are repeated depending on a degree of cleanness on a front face of the semiconductor substrate. In this removing method, the chemical solution and the water are hardly mixed so as to prevent corrosion and elution of a wiring material.

Abstract: A semiconductor processing reactor includes a rotating susceptor having at least one substrate holder for supporting a substrate during processing. A susceptor motor is coupled to the rotating susceptor and a substrate holder motor is coupled to the substrate holder. The susceptor motor controls the rotation of the rotating susceptor and the substrate holder motor controls the rotation of the substrate holder. This allows the rotating susceptor to be rotated independent of the rotation of the substrate holder. Further, the substrate holder lifts the substrate above the rotating susceptor allowing automated loading and unloading of the substrate.

Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes an upper plate, a lower plate and a gas manifold disposed there between. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce rotation of the substrate during a cleaning and drying process. A cleaning process involves flowing one or more fluids onto a surface of the substrate during its rotation. One-sided and two-sided cleaning and drying is provided.

Abstract: Fixtures and methods for clamping workpieces in a workplace to enable the optimized exposure thereof to a stream or flow of a supercritical fluid. Provided is a rotatably indexable chuck or locator mounting the workpiece and enabling orientating the latter in specific static pitch position within a high pressure vessel in order to subject the workpiece to a full frontal exposure to the supercritical fluid stream within the vessel. This mounting arrangement facilitates an optimum positioning of the workpiece being processed in the flow path of the supercritical fluid stream while oriented in selectively indexed rotational positions.

Abstract: A gas driven rotation apparatus includes a base member and a platter. The base member includes an upper surface and a mounting portion formed in the upper surface. The mounting portion includes an inner recess and an annular outer channel surrounding and spaced apart from the inner recess. A plurality of drive channels extend generally radially outwardly from the inner recess to the outer channel. The drive channels are substantially straight. A drive gas entrance passage extends through the base member and has an entrance opening in the inner recess. A drive gas exhaust passage extends through the base member and has an exhaust opening in the outer channel. The platter overlies the mounting portion. The drive channels are arranged and configured such that, when a drive gas flows through the drive channels, the drive gas causes the platter to rotate relative to the base member about an axis of rotation.

Abstract: A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.

Abstract: A method of forming at least one layer on a substrate surface by vacuum deposition of particles onto the substrate surface, the method comprising the step of moving at least part of the substrate at high speed during vacuum deposition in a first direction parallel to the substrate surface. The method reduces the amount of macroparticles in a layer or layers deposited on the substrate, and controls the microstructure and crystallographic structure of the deposited layer or layers. Also disclosed are devices for performing the method, and resulting products, for example a hard disk thin film media.

Abstract: The present invention relates to temperature control elements, spindle assemblies, and wafer processing assemblies. According to one embodiment of the present invention, a wafer processing assembly is provided comprising a rotary spindle assembly, at least one liquid source, a controller, a wafer support, and a wafer processing bowl. The rotary spindle assembly comprises a rotary drive motor, a rotary spindle coupled to the rotary drive motor, a heat regulating element arranged about the rotary spindle, and a heat regulating flange secured to the rotary drive motor. The controller is coupled to the liquid source and a temperature sensor coupled to one or both of the heat regulating element and the heat regulating flange and is programmed to be responsive to a temperature signal generated by the temperature sensor.

Abstract: The present invention relates to an improved apparatus for plasma treatment of golf ball surface. The improved apparatus comprises a cylindrical basket shaped rotating tumbler made from aluminum sheet metal that holds a plurality of golf balls within a sealed casing for surface preparation. A staggered hole pattern yields about 57% of open area in the tumbler surface to insure evacuation with minimum resistance. The holes are individually machined and have machined radiuses at each side of the sheet metal to allow for adequate coverage of a hard anodic coating which is necessary for protection of the sheet metal from the high intensity plasma. A two stage dry vacuum pumping system is used to reduce hydrocarbon impurities and improve print and paint adhesion.

Abstract: Apparatus and method for cleaning substrates. A substrate is held and rotated by a chuck and an atmospheric pressure plasma jet places a plasma onto predetermined areas of the substrate. Subsequently liquid rinse is sprayed onto the predetermined areas. In one embodiment, a nozzle sprays a gas onto the predetermined areas to assist in drying the predetermined areas when needed.

Abstract: An apparatus for automatically cleaning a mask applied to a mask cleaning step after an evaporation process. An RF plasma is used to clean the mask. By isolating the RF plasma generator, the wafer table and the mask table from the grounded reaction chamber, the RF voltage is supplied to the wafer table and the mask table. The bias generated by the RF voltage during evaporation process can thus be reduced to enhance the efficiency of evaporation. After removing the wafer being performed with the evaporation process, the RF plasma can be used to clean the mask. The mask can thus be fixed on the mask table without being removed or renewing the mask table.

Abstract: A semiconductor processing reactor includes a rotating susceptor having at least one substrate holder for supporting a substrate during processing. A susceptor motor is coupled to the rotating susceptor and a substrate holder motor is coupled to the substrate holder. The susceptor motor controls the rotation of the rotating susceptor and the substrate holder motor controls the rotation of the substrate holder. This allows the rotating susceptor to be rotated independent of the rotation of the substrate holder. Further, the substrate holder lifts the substrate above the rotating susceptor allowing automated loading and unloading of the substrate.

Abstract: An article (e.g. a semiconductor wafer) is held in an article holder by means of a number of gas flows emitted from gas vortex chambers. Some of the gas flows act to cool an adjacent article portion more than the other gas flows. For example, some of the vortex chambers emit more gas per unit of time than the other chambers. More cooling is provided to those portions of the article which are heated more during processing. Greater temperature uniformity can be achieved.

Abstract: A rotary substrate processing apparatus includes a rotor 1 having a holding member for holding a plurality of semiconductor wafers W arranged at appropriate intervals and a motor 4 for rotating the rotor 1. The holding member includes open/close holding rods 3 that are moved to open or close the rotor 1 in inserting the wafers W into the rotor 1 sideways and a plurality of constant-position holding rods 2a to 2d for holding the wafers W in cooperation with the open/close holding rods 3. Among the constant-position holding rods 2a to 2d, at least one constant-position holding rod 2a is equipped with a plurality of press members 5 which move toward respective peripheral portions of the wafers W. by centrifugal force due to the rotation of the rotor 1. Consequently, it becomes possible to make the wafers W follow the rotation of the rotor 1 ensurely and also possible to reduce slip between the open/close holding rods 3, the constant-position holding rods 2a to 2d and the wafers W.

Abstract: A substrate processing apparatus includes a substrate processing chamber; a mechanism for long and unloading a substrate into and out of the chamber; a substrate heating source provided in the chamber; and a raw material supply source for supplying a raw material toward the substrate for processing. During processing of the substrate, the raw material for processing is supplied from a surface facing a surface of the substrate to be processed. When the substrate and a holder on which the substrate is placed are moved to a predetermined position for processing in the substrate processing chamber, a space in the substrate processing chamber is divided by the substrate into an upper space serving as a reaction space for processing and a lower space where the substrate heating source, etc. are placed. The apparatus also includes a magnetic force source for holding the holder at the predetermined position in a levitational manner by a magnetic force during processing of the substrate.

Abstract: An apparatus for manufacturing a liquid crystal display device that can prevent chemical contamination attributed to contacting an external atmosphere, and a method of manufacturing the liquid crystal display device. The apparatus includes a cleaning chamber, a film deposition chamber for depositing a film on a layer cleaned in the cleaning chamber, and a transporter for transporting a substrate from the cleaning chamber to the film deposition chamber while preventing the substrate from being exposed to the external atmosphere.

Abstract: A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.

Abstract: The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators positioned outside of the chamber.

Abstract: In a method for polishing leads of a semiconductor package, a plurality of semiconductor packages is arranged in a certain manner. Then, the leads are automatically polished. The semiconductor packages may be masked to expose at least a part of the leads to be polished.