Abstract: In at least one embodiment, an interposer for a board interconnect system is provided. The interposer comprises a frame and at least one interconnect. The frame receives a substrate. The substrate includes a top side, a bottom side, and a conductive interface. The conductive interface extends through the top side and the bottom side for delivering an electrical signal from an electrical device positioned on the top side therethrough. The at least one interconnect includes a plurality of carbon nanotubes (CNTs) positioned within the frame for contacting the conductive interface of the substrate to deliver the electrical signal to a conductive arrangement of a circuit board.

Abstract: A multilayer structure including a transparent conductive thin film and a molybdenum metal thin film wherein difference of internal stress between the transparent conductive thin film and the molybdenum metal thin film is 1600 MPa or less.

Abstract: An electrical composite conductor includes a CuAg alloy base having an Ag content of 0.08 to 0.12% and a CuMg alloy having a Mg content of 0.1 to 0.7%. The composite conductor further includes a conductor edge and a conductor core, wherein at least one of the edge and the core include the CuMg alloy.

Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.

Abstract: Provided is a copper foil for printed circuit comprising a roughened layer on a surface of a copper foil by way of copper-cobalt-nickel alloy plating, a cobalt-nickel alloy plated layer formed on the roughened layer, and a zinc-nickel alloy plated layer formed on the cobalt-nickel alloy plated layer, wherein the total amount of the zinc-nickel alloy plated layer is 150 to 500 ?g/dm2, the lower limit of the nickel ratio in the alloy layer is 0.16, the upper limit thereof is 0.40, and the nickel content is 50 ?g/dm2 or more. With the development of electronic equipment, the miniaturization and high integration of semiconductor devices have advanced further. This tendency has led to a demand for the adoption of a higher temperature in treatment in a production process of printed circuits and has led to heat generation during the use of electronic equipment after the productization.

Abstract: When silver oxide is reduced to silver, a large number of cores of metallic silver are formed inside the silver oxide. Then, the silver oxide is reduced in a manner of being hollowed out while its original outer configuration is being maintained. As a result, the curvature of the silver generated becomes larger. The utilization of this microscopic-particle implementation mechanism allows accomplishment of the bonding even if the silver oxide is supplied not in a particle-like configuration, but in a closely-packed layer-like configuration. In the present invention, there is provided an electronic member including an electrode for inputting/outputting an electrical signal, or a connection terminal for establishing a connection with the electrical signal, wherein the uppermost surface of the electrode or the connection terminal is a silver-oxide layer.

Abstract: A silver-coated material for a movable contact component includes an electrically conductive base member (1) that is comprised of copper or a copper alloy; an underlayer (2) that is comprised of nickel or a nickel alloy, and that has a thickness between 0.01 ?m and 0.5 ?m to coat on the electrically conductive base member; an intermediate layer (3) that is comprised of palladium, or a palladium alloy, or a silver tin alloy, and that has a thickness between 0.01 ?m and 0.5 ?m to coat on the underlayer; and an outermost surface layer (4) that is comprised of silver or a silver alloy, and that is formed on the intermediate layer.

Abstract: A Ni plating is applied on a base metal in a metal strip form, and a brightener-free Sn-(1 to 4% by mass)Cu plating is applied on the Ni plating. The metal strip is heat-treated at a temperature at or above the melting point (solidus line) of a Sn-(1 to 4% by mass)Cu alloy to form a Cu—Sn compound layer or a Cu—Ni—Sn-compound layer on the Ni plating layer and a Sn layer or a Sn—Cu-ally layer on the Cu—Sn compound layer or the Cu—Ni—Sn-compound layer. The metal strip is further fabricated into a connector. Thus, a metal strip, which has good soldability on a substrate, is free from the occurrence of whiskers at a terminal part during storage or upon fitting into FPC or FFC, and is necessary for a lead-free connector, can be realized.

Abstract: A solar cell electrode wire includes a core material having a volume resistivity of not greater than about 2.3 ??·cm and a proof strength in the range of about 19.6 MPa to about 85 MPa, and a hot-dip solder plating layer disposed on a surface of the core material. The core material is preferably an annealed pure copper material having an oxygen content of not higher than about 20 ppm. The core material may be a clad material including an interlayer of aluminum and copper layers disposed on opposite surfaces of the interlayer.

Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).

Abstract: An integrated electrode-current collector sheet includes a current collector including uneven portions disposed on at least one side of the current collector; and an active material layer disposed on the current collector, the active material layer at least partially covering the uneven portions. In addition, disclosed are a capacitive deionization device and an electric double layer capacitor including the integrated electrode-current collector sheet.

Abstract: [Issues to be Solved] Providing enhanced bonding reliability of Au alloy bonding wire with low electrical resistivity to Al electrode of semiconductor device, and its application of semiconductor device is bonded with Al electrode pad by the same wire. [Solution Means] Au alloy bonding wire comprising: 0.02-0.3 mass % Ag, total amount of 10-200 mass ppm at least one element of Ge and/or Si, and/or total amount of 10-200 mass ppm at least one element of Al and/or Cu, with residual of Au. Moreover, Al and/or Al alloy pad bonded with the above Au alloy bonding wire.

Abstract: A terminal for an engaging type connector includes a punched Cu alloy strip as a base material, a coating formed on the Cu alloy strip by postplating processes and including a Sn layer, and a Cu—Sn alloy layer sandwiched between the base material and the Sn layer. The Sn layer is smoothed by a reflowing process. The terminal has an engaging part and a solder-bonding part, and the surface of a part of the base material corresponding to the engaging part has a surface roughness higher than that of the surface of the base material corresponding to the solder-bonding part. The engaging part has a low frictional property and the solder-bonding part has improved solder wettability.

Abstract: A silver-coated material for a movable contact component is provided, in which a conductive base member (1) composed of iron or an iron alloy is coated with an underlayer (2) composed of nickel or a nickel alloy of 0.005 to 0.5 ?m thick, the underlayer (2) is coated with an intermediate layer (3) composed of palladium, a palladium alloy or a silver tin alloy of 0.01 to 0.5 ?m thick and the intermediate layer (3) is coated with an outermost surface layer (4) composed of silver or a silver alloy.

Abstract: A whisker-free coating structure and a method for fabricating the same are disclosed. The whisker-free coating structure includes a substrate, a tungsten doped copper layer overlaying the substrate, and a lead-free tin layer overlaying the tungsten doped copper layer.

Abstract: Nanotube-based structure and method of forming the same are disclosed. A structure having two tips is provided for defining a location for forming a nanotube connection. The nanotube connection, which can be coated with an electrically conductive polymer for enhanced conductivity, can be used in forming nanotube-based devices for various applications.

Abstract: Disclosed is a lead wire having a lead electrode made of a metal and a cap. The cap covers the front end portion of the lead electrode and is made of a metal harder than that of the lead electrode. Also disclosed is an electronic component having a functional device and the lead wire. The lead electrode is led out from the functional device.

Abstract: A connecting wire having an electrically conductive core—preferably provided by a wire or ribbon—with a coating provided on the surface of the core, the coating being composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally containing silicon as an additional alloy component. The invention further relates to a manufacturing method for such a connecting wire.

Abstract: The present invention relates to an electrical contact material having a surface layer made of a noble metal or an alloy having the noble metal as its main component, a method for manufacturing the same and an electrical contact using the same. Recently, electrical contact materials having excellent abrasion resistance are used for sliding electrical contacts such as a connector terminal of an automobile harness, a contact switch mounted in a cellular phone and terminals of a memory card. Although there have been known ones having an organic coating film composed of either aliphatic amine or mercaptan or a mixture of the both provided on the electrical contact material described above as the electrical contact materials having excellent abrasion resistance, they have had problems that even though they are effective with a low load of 0.5 N or below, abrasion accelerates when the load exceeds 0.5 N and sliding characteristics drop under a high-temperature environment.

Abstract: This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanoparticles in a plane, the nanoparticles being aligned in strings, the strings being roughly parallel to each other and configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanoparticles allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanoparticles are electrically connected to the continuous conductive film.

Abstract: This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanowires in a plane, the nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the nanowires in the plane of the layer, the nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanowires allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanowires are electrically connected to the continuous conductive film.

Abstract: This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of compound magnetic nanowires in a plane, the compound nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the compound nanowires in the plane of the layer, the compound nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of compound magnetic nanowires allows for substantial optical transparency of the conductive layer. A compound magnetic nanowire may comprise a silver nanowire covered by a layer of magnetic metal such as nickel or cobalt. Furthermore, a compound magnetic nanowire may comprise a carbon nanotubes (CNT) attached to a magnetic metal nanowire.

Abstract: A lightweight composite electrical conductor for aerospace applications, having a core of a plurality of aluminum strands surrounded by an outer layer of a plurality of copper strands. The conductor may be a wire rope having a core of a plurality of aluminum members each having a plurality of aluminum strands, the core of aluminum members being surrounded by an outer layer of a plurality of copper members each having a plurality of copper strands.

Abstract: A terminal for an engaging type connector includes a punched Cu alloy strip as a base material, a coating formed on the Cu alloy strip by postplating processes and including a Sn layer, and a Cu—Sn alloy layer sandwiched between the base material and the Sn layer. The Sn layer is smoothed by a reflowing process. The terminal has an engaging part and a solder-bonding part, and the surface of a part of the base material corresponding to the engaging part has a surface roughness higher than that of the surface of the base material corresponding to the solder-bonding part. The engaging part has a low frictional property and the solder-bonding part has improved solder wettability.

Abstract: An electrical connection element of packaging substrate is disclosed. Wherein a plurality of conductive pads and a solder mask are formed on the surface of the packaging substrate, and a plurality of openings is formed in the solder mask to expose the conductive pads covered there beneath. The electrical connection element formed on the conductive pad comprises a core layer, a first covering layer and a second covering layer. The first covering layer covers the core layer, and the density of the first covering layer is higher than the density of the core layer. The second covering layer covers the first covering layer.

Abstract: Disclosed is an electronic component comprising a connecting terminal part having a surface of an electroconductive base material and a germanium-containing nickel plating film provided on the surface. In the electronic component, the plating film provided on the surface of the electroconductive base material in the connecting terminal part possesses excellent heat resistance and solder wettability.

Abstract: The connection reliability of connecting terminals with displacement gold plating films is improved by connecting terminals comprising a conductive layer, an electroless nickel plating film, a first palladium plating film which is a displacement or electroless palladium plating film with a purity of 99% by mass or greater, a second palladium plating film which is an electroless palladium plating film with a purity of at least 90% by mass and less than 99% by mass, and a displacement gold plating film, wherein the electroless nickel plating film, the first palladium plating film, the second palladium plating film and the displacement gold plating film are laminated in that order on one side of the conductive layer, and the displacement gold plating film is situated on the uppermost surface layer on the opposite side from the conductive layer.

Abstract: A nano-hole array for improving contact conductance of a conductor element that consists of a first layer and a second layer is provided. The nano-hole array formed between the first and second layers comprises a plurality of holes. The contact conductance of the conductor element is enhanced by reducing the hole size of the hole array, increasing the occupation rate of the hole array, and performing thermal annealing.

Abstract: An electrode manufacturing method which can form a flat short-circuit prevention coating film (solid polyelectrolyte layer) having a uniform thickness and prevent short circuits from occurring in an electrochemical device is provided. The electrode manufacturing method comprises a first step of applying an active material layer coating material containing an active material particle, an active material layer binder, and a first solvent to a current collector so as to form a coating film made of the active material layer coating material; a second step of applying a second solvent to the coating film; and a third step of applying a solid polyelectrolyte layer coating material containing a solid polyelectrolyte, a solid polyelectrolyte layer binder, and a third solvent to the coating film coated with the second solvent.

Abstract: This invention relates to an electrical conductor (25) which is composed at least partially of an electrically conductive material. According to the invention, at least part of the electrical conductor (25) is provided with a protective layer (11) whose specific electrical conductivity is lower, at least locally, than that of the electrically conductive material of the conductor (25).

Abstract: Structures comprising a carbon nanotube (CNT) network and metal, as well as methods for making a CNT network structure, are provided.

Abstract: A composite wire can include a core including a material chosen from the group consisting of Ag and Ir and combinations thereof, a shell around the core including a material chosen from the group consisting of Ta, MP35N, and Nb and combinations thereof, and an outer layer over the shell including a material chosen from the group consisting of Pt and Pt—Ir and combinations thereof.

Abstract: The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A).

Abstract: The present invention relates to a transparent electrode for a display device which includes a first transparent conductive film containing nitrogen, and a second transparent conductive film not containing nitrogen, wherein the first transparent conductive film is in contact with an aluminum alloy film. In accordance with the present invention, there is obtained a transparent electrode for a display device which is capable of, even when a barrier metal layer to be generally provided between an aluminum alloy film and the transparent electrode is omitted, controlling the variance small while keeping the low contact resistance, and further which is also excellent in light transmission characteristics.

Abstract: An electrical interconnect includes first and second electrical contacts to be electrically connected, each electrical contact having a plurality of electrically conductive nanowires extending outwardly from a respective electrical contact; and the nanowires of the first electrical contact configured to mesh with the nanowires of the second electrical contact such that an electrical connection is established between the first electrical contact and the second electrical contact. A method for interconnecting electrical contacts includes meshing a first array of electrically conductive nanowires extending from a first electrical contact with a second array of electrically conductive nanowires extending from a second electrical contact so as to establish an electrical connection between said first and second electrical contacts.

Abstract: A solar cell lead wire includes a conductive material, and a solder plated layer on a periphery of the conductive material. The solder plated layer is formed flat by rolling. A method of manufacturing a solar cell lead wire includes feeding an elongate conductive material from a feed reel, the elongate conductive material including a rectangular conductor or a round conductor, soaking the conductive material in a molten solder in a molten solder plating bath, cooling the conductive material to have a plated wire with a solder plated layer formed on the conductive material, and winding the plated wire on a winding reel. The plated wire is formed flat by rolling after the solder plated layer of the plated wire is solidified by the cooling.

Abstract: The invention relates to a device which makes it possible to establish a horizontal electrical connection between at least two bonding pads. This device comprises horizontal carbon nanotubes which link the vertical walls of said bonding pads and the bonding pads are made by stacking layers of at least two materials, one of which catalyzes growth of the nanotubes and the other of which acts as a spacer between the layers of material which catalyzes growth of the nanotubes.

Abstract: A contact surface. for electrical contacts may include an Ag layer deposited on a copper-based substrate using galvanic methods. The Ag layer includes finely dispersed graphite particles in a quantity of, e.g., 1 to 3 weight % of the Ag layer, the graphite particles having a length in the range of, e.g., 0.5 to 20 ?m.

Abstract: A conducting film or device electrode includes a substrate and two transparent or semitransparent conductive layers separated by a transparent or semitransparent intervening layer. The intervening layer includes electrically conductive pathways between the first and second conductive layers to help reduce interfacial reflections occurring between particular layers in devices incorporating the conducting film or electrode.

Abstract: In a power MOS transistor, for example, a source electrode is formed so as to be commonly connected to a plurality of source regions formed on the front surface. Thus, a current density varies based on in-plane resistance of the source electrode, thereby providing the necessity of increasing the number of wires connecting the sources and a lead. In the invention, an electrode structure includes a copper plating layer 10e formed on a pad electrode 10a by an electrolytic plating method, and a nickel plating layer 10f and a gold plating layer formed so as to cover the upper and side surfaces of the copper plating layer 10e by an electroless plating method.

Abstract: Bond wires for integrated circuits are implemented using a variety of methods. Using one such method, a composite bond wire is produced for use in an integrated circuit. A conductive material is melted and mixed with a material of particles less than 100 micrometers in size to create a mixture. The mixture is used to create the composite bond wire. A composite wire having an inner core and an outer layer having a higher conductivity than the inner core is also provided. The outer layer is designed to be thicker than the skin depth at the operating frequency for carrying AC signals.

Abstract: Various embodiments provide an electrode comprising a conductive substrate, a first layer of a mixture comprising iridium oxide in a crystalline phase and tantalum oxide in an amorphous phase on a portion of an outer surface of the conductive substrate, and a second layer of the mixture comprising iridium oxide in an amorphous phase and tantalum oxide in an amorphous phase on an outer surface of the first layer.

Abstract: A clad material for a wiring connection has an electroconductive layer formed from either pure Cu or a Cu alloy having higher electroconductivity than pure Al, a surface layer formed from either pure Al or an Al alloy and layered on one surface of the electroconductive layer, and a solder layer formed by hot-dip solder plating on the other surface of the electroconductive layer. The wiring connection member has a first connection end provided with an electroconductive layer soldered to an electrode of a semiconductor element, and a second connection end provided with an electroconductive layer soldered to, for example, an external wiring device. The wiring connection member is processed from the clad material for a wiring connection. This wiring member prevents molten solder from depositing on a pressing and heating portion of a local heating apparatus while also possessing excellent solderability.

Abstract: A low-resistance wiring structure and a liquid crystal display are disclosed. The liquid crystal display includes a first substrate; a thin film transistor (TFT) formed on the first substrate and formed of a gate wiring, a data wiring and a semiconductor layer; and a second substrate attached to the first substrate in a facing manner, wherein at least one of the gate wiring and the data wiring is formed as a first wiring made of copper, a second wiring made of a barrier metal preventing spreading of copper, and a metal oxide film pattern formed between the first and second wirings. A MO/Cu wiring structure is implemented by using pure molybdenum, so that the low-resistance wiring structure with high reliability can be formed at a low cost.

Abstract: The present invention relates to a method for preparing a transparent electrode using a carbon nanotube(CNT) film, and more particularly, to a method for preparing a transparent electrode, the method comprising the steps of forming a CNT film on a desired substrate using a dispersed solution of CNT and then reducing/forming metal nanoparticles on the surface of the CNT film. According to the present invention, a transparent electrode in which gold nanoparticles are formed on the surface of high density CNT film having high purity, can be prepared. The inventive transparent electrode has high visible ray penetration and an excellent electrical conductivity by hyperfine metal particles uniformly formed on the surface thereof as well as a uniform increase in electrical conductivity over the whole CNT film, and thus it can be applied to various displays as well as image sensors, solar cells, touch panels, digital papers, electromagnetic shielding agents, static charge preventing agents and the like.

Abstract: A wire having an outer shell and a core, the core including at least a first plurality of core segments that may be made of a first core material and a second plurality of core segments that may be made of a second core material different from the first core material. The first and second core segments are arranged in a periodic alternating arrangement along the length of the wire. The outer shell may be made of a metal, such as a biocompatible metal, and the core segments may be made of different materials to provide periodic material properties along the length of the wire.

Abstract: A transparent conductive film having a multilayer film of two or more layers (a pixel electrode, a gate terminal pad, and a source terminal pad) includes a first transparent conductive film having an amorphous structure, and a second transparent conductive film, formed over the first transparent conductive film, and having a crystalline structure.

Abstract: Disclosed is a plated flat conductor including a flat conductor of copper or a copper alloy and a plated layer formed on a surface of the flat conductor. The plated layer includes a first intermetallic compound layer of Cu3Sn disposed on the surface of the flat conductor, a second intermetallic compound layer of Cu6Sn5 formed on the first intermetallic compound, and a superficial layer formed on the second intermetallic compound layer. The superficial layer is plating material of pure tin or a tin alloy and has an average thickness from about 0.3 ?m to 1.0 ?m and a maximum thickness of about 1.0 ?m or less. A volume ratio of the second intermetallic compound layer to the first intermetallic compound layer is about 1.5 or more.

Abstract: An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier (1) provided with an insulating layer (7) which is patterned at a front side. Conducting material in an electrode layer (4) is applied in the cavities of the patterned insulating layer and in contact with the carrier. An connection layer (5) is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.

Abstract: An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier (1) provided with an insulating layer (7) which is patterned at a front side. Conducting material in an electrode layer (4) is applied in the cavities of the patterned insulating layer and in contact with the carrier. An connection layer (5) is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.