Piezoelectric Patents (Class 204/192.18)
  • Patent number: 11056532
    Abstract: Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 6, 2021
    Assignee: Intel Corporation
    Inventors: Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Sanaz K. Gardner, Bruce A. Block
  • Patent number: 10924086
    Abstract: A device including a piezoelectric substrate, an interdigital transducer (IDT), and an antireflective structure is disclosed herein. The piezoelectric substrate has a front-side surface and a smoothed back-side surface. The IDT is on the front-side surface of the piezoelectric substrate. The antireflective structure is over at least a portion of the smoothed back-side surface of the piezoelectric substrate. By having the antireflective structure on at least a portion of the smoothed back-side surface of the piezoelectric substrate, reflection of spurious bulk acoustic waves toward the front-side surface of the piezoelectric substrate can be reduced and/or eliminated to lessen interference with surface acoustic waves.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: February 16, 2021
    Assignee: Qorvo US, Inc.
    Inventors: Marc Solal, Charles E. Carpenter, Timothy Daniel, Shogo Inoue, Tom Moonlight
  • Patent number: 10525265
    Abstract: A microphone system including a first sensor configured to output a first signal based on an ambient sound relative to a recipient of the system, a second sensor configured to output a second signal corresponding to a noise reference, and first signal processing circuitry configured to process the first signal based on the second signal and output a third signal based on the processed first signal, wherein the system is configured to limit a gain of the third signal based on the presence of impulsive energy in the second signal.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: January 7, 2020
    Assignee: Cochlear Limited
    Inventors: Florent Maxime Hubert-Brierre, Thomas Leroux
  • Patent number: 10476463
    Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: November 12, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Hun Lee, Chang Hyun Lim, Tae Yoon Kim, Moon Chul Lee
  • Patent number: 10330642
    Abstract: Lateral boundaries of a fluidic passage of a fluidic device incorporating at least one BAW resonator structure are fabricated with photosensitive materials (e.g., photo definable epoxy, solder mask resist, or other photoresist), allowing for high aspect ratio, precisely dimensioned walls. Resistance to delamination and peeling between a wall structure and a base structure is enhanced by providing a wall structure that includes a thin footer portion having a width that exceeds a width of an upper wall portion extending upward from the footer portion, and/or by providing a wall structure arranged over at least one anchoring region of a base structure. Anchoring features may include recesses and/or protrusions.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: June 25, 2019
    Assignee: QORVO US, INC.
    Inventors: Rio Rivas, Vincent K. Gustafson
  • Patent number: 10291203
    Abstract: A MEMS resonator is provided with a high quality factor and lower motional impedance. The MEMS resonator includes a silicon layer having opposing surfaces, a piezoelectric layer above one of the surfaces of the silicon layer, and a pair of electrodes disposed on opposing surfaces of the piezoelectric layer, respectively. Moreover, the piezoelectric layer has a crystallographic axis that extends at an angle relative to the vertical axis of the MEMS resonator.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: May 14, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Ville Kaajakari
  • Patent number: 10084425
    Abstract: An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge is disposed adjacent to one of the sides of the second electrode.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: September 25, 2018
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Paul Bradley, Robert Thalhammer, Thomas Faust
  • Patent number: 10063210
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: August 28, 2018
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Patent number: 9998087
    Abstract: An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate including an epitaxial structure formed on a compound semiconductor substrate, a power amplifier upper structure formed on a top-side of a left part of the compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on the top-side of a right part of the compound semiconductor epitaxial substrate; wherein the left part of the compound semiconductor epitaxial substrate and the power amplifier upper structure form a power amplifier; the right part of the compound semiconductor epitaxial substrate and the film bulk acoustic resonator form an acoustic wave device; the integrated structure of power amplifier and acoustic wave device on the same compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between power amplifier and acoustic wave device.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: June 12, 2018
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Shu-Hsiao Tsai, Re Ching Lin, Pei-Chun Liao, Cheng-Kuo Lin, Yung-Chung Chin
  • Patent number: 9995674
    Abstract: A laser vibrometer for measurement of ambient chemical species includes a laser that produces a beam that is split into a reference readout beam and a signal readout beam. A probe laser beam is tuned to an absorption feature of a molecular transition, and generates acoustic signals when incident on a gaseous species via the photo acoustic effect. The scattered acoustic signals are incident on a thin membrane that vibrates. The readout laser beam reflected from the vibrating membrane is mixed with the reference beam at the surface of a photo-EMF detector. Interferrometric fringes are generated at the surface of the photo-EMF detector. Electric current is generated in the photo-EMF detector when the fringes are in motion due to undulations in the signal readout beam imparted by the vibrating membrane. A highly sensitive photo-EMF detector is capable of detecting picoJoules or less laser energy generated by vibrating processes.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: June 12, 2018
    Assignee: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
    Inventor: Narasimha S. Prasad
  • Patent number: 9994950
    Abstract: A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.1).
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: June 12, 2018
    Assignees: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V., TU DRESDEN
    Inventors: Hagen Bartzsch, Daniel Glöß, Peter Frach, Stephan Barth
  • Patent number: 9922809
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: March 20, 2018
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Patent number: 9902153
    Abstract: A method of making a piezoelectric film includes forming a PbTO3 (PTO) coating film by applying a precursor liquid of a coating film containing PTO as a main ingredient, forming a PTO amorphous layer containing lead titanate as a main ingredient by heating the PTO coating film at a heating temperature lower than a crystallization temperature at which the PTO coating film is crystalized, and forming, on the PTO amorphous layer, a piezoelectric thin-film layer having a main (100) orientation measured by X-ray analysis and containing lead zirconate titanate (PZT) as a main ingredient. The heating temperature is 300° C. or lower.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: February 27, 2018
    Assignee: RICOH COMPANY, LTD.
    Inventor: Xianfeng Chen
  • Patent number: 9793129
    Abstract: A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality of plasma shield edge segments is defined by an inner edge and side edges. The inner edge is interior to and concentric to the annular edge of the outer structure. The side edges extend between the inner edge and the annular edge.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: October 17, 2017
    Assignee: Infineon Technologies AG
    Inventors: Manfred Engelhardt, Michael Roesner, Georg Ehrentraut
  • Patent number: 9758868
    Abstract: A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: September 12, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Patrick Girard Breiling, Ramesh Chandrasekharan, Edmund Minshall, Colin Smith, Andrew Duvall, Karl Leeser
  • Patent number: 9347128
    Abstract: A method for forming a dielectric thin film that forms a PZT thin film having a (100)/(001) orientation. After a seed layer is formed by adhering PbO gas to a surface of a substrate, a voltage is applied to a target of lead zirconate titanate (PZT) and perform sputtering, while the substrate is heated inside of an evacuated vacuum chamber. Then, a PZT thin film is formed on the surface of the substrate. Because Pb and O are supplied from the seed layer, a PZT film having a (001)/(100) orientation can be formed without lack of Pb.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: May 24, 2016
    Assignee: ULVAC, INC.
    Inventors: Isao Kimura, Takehito Jinbo, Hiroki Kobayashi, Youhei Endou, Youhei Oonishi
  • Publication number: 20150136586
    Abstract: The invention relates to a method for producing a polycrystalline ceramic film on a surface (12) of a substrate (10), in which a particle stream is directed onto the surface (12) and the ceramic film is formed by deposition of the particles onto the surface (12), wherein the particle stream is directed by means of a diaphragm onto the surface (12) along a preferred direction until a first specified layer thickness is reached, the preferred direction and a surface normal of the surface (12) enclosing a specified angle of incidence. According to the invention, the diaphragm is removed from the particle stream after the specified layer thickness has been reached, and additional particles are directed onto the surface (12) until a specified second layer thickness has been reached.
    Type: Application
    Filed: June 18, 2013
    Publication date: May 21, 2015
    Inventors: Matthias Schreiter, Wolfram Wersing
  • Patent number: 9017525
    Abstract: In a method for forming a metal fluoride film, a metal fluoride film is formed on a substrate by sputtering using a metal target and a mixed gas containing O2 gas and a reactive gas being a fluorocarbon gas.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: April 28, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Hideo Akiba
  • Patent number: 8992744
    Abstract: A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsunehiro Ino, Akira Takashima
  • Publication number: 20150022274
    Abstract: A piezoelectric film producing process includes depositing a piezoelectric body in a mixed atmosphere of N2 gas and Ar gas by using a sputtering method, using an Al—Cu alloy as deposition material.
    Type: Application
    Filed: July 14, 2014
    Publication date: January 22, 2015
    Inventors: Takashi YAMAZAKI, Osamu IWAMOTO
  • Patent number: 8845867
    Abstract: A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: September 30, 2014
    Assignee: TDK Corporation
    Inventors: Shinji Hara, Yoshihiro Tsuchiya, Tsutomu Chou, Tomihito Mizuno
  • Publication number: 20140265734
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 18, 2014
    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
    Inventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez
  • Publication number: 20140246305
    Abstract: A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a single target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.
    Type: Application
    Filed: May 15, 2014
    Publication date: September 4, 2014
    Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventor: John D. Larson, III
  • Patent number: 8673121
    Abstract: In accordance with a representative embodiment, a method, comprises: providing a substrate; forming a first piezoelectric layer having a compression-negative (CN) polarity over the substrate; and forming a second piezoelectric layer having a compression-positive (CP) over the substrate and adjacent to the first piezoelectric layer.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: March 18, 2014
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: John D. Larson, III, Jyrki Kaitila, Stefan Bader
  • Patent number: 8597722
    Abstract: A method for using an integrated battery and device structure includes using two or more stacked electrochemical cells integrated with each other formed overlying a surface of a substrate. The two or more stacked electrochemical cells include related two or more different electrochemistries with one or more devices formed using one or more sequential deposition processes. The one or more devices are integrated with the two or more stacked electrochemical cells to form the integrated battery and device structure as a unified structure overlying the surface of the substrate. The one or more stacked electrochemical cells and the one or more devices are integrated as the unified structure using the one or more sequential deposition processes. The integrated battery and device structure is configured such that the two or more stacked electrochemical cells and one or more devices are in electrical, chemical, and thermal conduction with each other.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: December 3, 2013
    Assignee: Sakti3, Inc.
    Inventors: Fabio Albano, Chia Wei Wang, Ann Marie Sastry
  • Publication number: 20130228454
    Abstract: In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.
    Type: Application
    Filed: October 26, 2011
    Publication date: September 5, 2013
    Inventor: Kenji Mawatari
  • Publication number: 20130220799
    Abstract: A method for forming a dielectric thin film that forms a PZT thin film having a (100)/(001) orientation. After a seed layer is formed by adhering PbO gas to a surface of a substrate, a voltage is applied to a target of lead zirconate titanate (PZT) and perform sputtering, while the substrate is heated inside of an evacuated vacuum chamber. Then, a PZT thin film is formed on the surface of the substrate. Because Pb and O are supplied from the seed layer, a PZT film having a (001)/(100) orientation can be formed without lack of Pb.
    Type: Application
    Filed: April 5, 2013
    Publication date: August 29, 2013
    Applicant: ULVAC, Inc.
    Inventor: ULVAC, Inc.
  • Patent number: 8460519
    Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: June 11, 2013
    Assignee: Applied Materials Inc.
    Inventors: Mengqi Ye, Zhendong Liu, Peijun Ding
  • Patent number: 8330556
    Abstract: An acoustic resonator, comprises a substrate and a first passivation layer disposed over the substrate. The first passivation layer comprises a first layer of silicon carbide (SiC). The acoustic resonator further comprises a first electrode disposed over the passivation layer, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator comprises a second passivation layer disposed over the second electrode. The second passivation layer comprises a second layer of silicon carbide (SiC).
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: December 11, 2012
    Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: Daniel J. Miller, Martha Johnson
  • Patent number: 8288020
    Abstract: Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of lead zirconate titanate (PZT), and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention comprises: a LaNiO3 film having a (001) orientation; a NaNbO3 film having a (001) orientation; and a (Bi, Na, Ba) TiO3 film having a (001) orientation. The LaNiO3 film, the NaNbO3 film, and the (Bi, Na, Ba)TiO3 film are laminated in this order.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: October 16, 2012
    Assignee: Panasonic Corporation
    Inventors: Takakiyo Harigai, Hideaki Adachi, Eiji Fujii
  • Patent number: 8192789
    Abstract: The present invention provides a method to design, manufacture and structure a multi-component energy device having a unified structure, wherein the individual components are chosen from the list consisting of electrochemical cells, photovoltaic cells, fuel-cells, capacitors, ultracapacitors, thermoelectric, piezoelectric, microelectromechanical turbines and energy scavengers. Said components are organized into a structure to achieve an energy density, power density, voltage range, current range and lifetime range that the single components could not achieve individually, i.e. to say the individual components complement each other. The individual components form a hybrid structure, wherein the elements are in electrical, chemical and thermal conduction with each other.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: June 5, 2012
    Assignee: Sakti3, Inc.
    Inventors: Fabio Albano, Chia Wei Wang, Ann Marie Sastry
  • Publication number: 20120107557
    Abstract: A method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing scandium on a substrate, the method includes: sputtering step for sputtering aluminum and scandium under an atmosphere containing at least a nitrogen gas. In the sputtering step in the method according to the present invention, a scandium content rate falls within the range from 0.5% by atom to 50% by atom when a temperature of the substrate falls within the range from 5° C. to 450° C. during the sputtering step.
    Type: Application
    Filed: June 30, 2010
    Publication date: May 3, 2012
    Applicants: DENSO CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Morito Akiyama, Kazuhiko Kano, Akihiko Teshigahara
  • Patent number: 8133362
    Abstract: A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: March 13, 2012
    Assignee: FUJIFILM Corporation
    Inventors: Jeffrey Birkmeyer, Youming Li, Steve Deming, Mats G. Ottosson
  • Patent number: 8100513
    Abstract: A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A1+?[(ZrxTi1?x)1?yMy]Oz, where A represents one or more A-site elements including lead (Pb) as a main component, M represents one or more of vanadium (V), niobium (Nb), tantalum (Ta), and antimony (Sb) as one or more B-site elements, zirconium (Zr) and titanium (Ti) are also B-site elements, 0<x?0.7, 0.1?y?0.4, ? is approximately zero, z is approximately 3, and ? and z may deviate from 0 and 3, respectively, within ranges of ? and z in which the composition expressed by the compositional formula A1+?[(ZrxTi1?x)1?yMy]Oz can substantially form a perovskite structure.
    Type: Grant
    Filed: March 20, 2008
    Date of Patent: January 24, 2012
    Assignee: Fujifilm Corporation
    Inventors: Takami Arakawa, Takamichi Fujii
  • Patent number: 8012315
    Abstract: A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: September 6, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsunehiro Ino, Akira Takashima
  • Patent number: 7997692
    Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.
    Type: Grant
    Filed: January 18, 2008
    Date of Patent: August 16, 2011
    Assignee: Fujifilm Corporation
    Inventors: Yukio Sakashita, Tsutomu Sasaki
  • Publication number: 20110180391
    Abstract: In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (CN) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.
    Type: Application
    Filed: January 22, 2010
    Publication date: July 28, 2011
    Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
    Inventors: John Larson, III, Sergey Mishin
  • Publication number: 20110143146
    Abstract: Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of lead zirconate titanate (PZT), and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention comprises: a LaNiO3 film having a (001) orientation; a NaNbO3 film having a (001) orientation; and a (Bi, Na, Ba) TiO3 film having a (001) orientation. The LaNiO3 film, the NaNbO3 film, and the (Bi, Na, Ba)TiO3 film are laminated in this order.
    Type: Application
    Filed: November 30, 2010
    Publication date: June 16, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Takakiyo HARIGAI, Hideaki Adachi, Eiji Fujii
  • Patent number: 7923906
    Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: (Pb1?x+?Mx) (ZryTi1?y)O—??(P) wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3.
    Type: Grant
    Filed: September 3, 2008
    Date of Patent: April 12, 2011
    Assignee: FUJIFILM Corporation
    Inventors: Takami Arakawa, Takamichi Fujii
  • Publication number: 20110034336
    Abstract: A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RENbO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RENbO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RENbO6 defects are also disclosed.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 10, 2011
    Inventors: Amit Goyal, Sung-Hun Wee, Eliot Specht, Claudia Cantoni
  • Publication number: 20100214369
    Abstract: A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d31 greater than 150 pC/N and a breakdown voltage of 80 V or more, which is defined by an applied voltage that results in a current value of 1 ?A or more.
    Type: Application
    Filed: February 16, 2010
    Publication date: August 26, 2010
    Inventors: Takayuki Naono, Yoshiki Morita, Yoshikazu Hishinuma, Takamichi Fujii
  • Publication number: 20100208005
    Abstract: When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face to each other, the film is formed with surrounding the substrate with a wall surface having the constituent elements of the target adhering thereto, and applying a physical treatment to the wall surface to cause the components adhering to the wall surface to be released into the film formation atmosphere.
    Type: Application
    Filed: February 17, 2010
    Publication date: August 19, 2010
    Inventors: Takamichi FUJII, Takayuki Naono
  • Publication number: 20100141097
    Abstract: A MEMS device with a thin piezoelectric actuator is described. A substrate with a first surface has a crystalline orientation prompting layer on the first surface. A piezoelectric portion contacts the crystalline orientation prompting layer and has an orientation corresponding to the orientation of the crystalline orientation prompting layer. A dielectric material surrounds the piezoelectric portion. The dielectric material is formed of an inorganic material.
    Type: Application
    Filed: October 22, 2009
    Publication date: June 10, 2010
    Inventors: Youming Li, Jeffrey Birkmeyer
  • Publication number: 20100136245
    Abstract: The present invention provides a method to design, manufacture and structure a multi-component energy device having a unified structure, wherein the individual components are chosen from the list consisting of electrochemical cells, photovoltaic cells, fuel-cells, capacitors, ultracapacitors, thermoelectric, piezoelectric, microelectromechanical turbines and energy scavengers. Said components are organized into a structure to achieve an energy density, power density, voltage range, current range and lifetime range that the single components could not achieve individually, i.e. to say the individual components complement each other. The individual components form a hybrid structure, wherein the elements are in electrical, chemical and thermal conduction with each other.
    Type: Application
    Filed: November 6, 2009
    Publication date: June 3, 2010
    Applicant: Sakti3, Inc.
    Inventors: Fabio Albano, Chia Wei Wang, Ann Marie Sastry
  • Publication number: 20100133091
    Abstract: A magnetron circuit of a rectangular type is disposed on a lower surface of a rectangular target. A half of the target is covered with a shield plate, so that sputtering particles sputtered from an erosion region (a region with a maximized magnetic flux density) therebelow is blocked so as not to fly toward a substrate. The substrate is disposed at a level so as to be located in a plasma region of a vacuum chamber, and sputtering particles (ZnO) sputtered from a region exposed from the shield plate in the erosion region is caused to be incident on a surface of the substrate. When a gas pressure is lowered, a mean free path of each of the sputtering particles is lengthened to cause a large amount of high-energy sputtering particles to be incident. As a result, a hexagonal crystal particle having a plane that is a crystal plane hardly damaged by incidence of the high-energy sputtering particles is preferentially grown to form a c-axis in-plane oriented film.
    Type: Application
    Filed: November 22, 2007
    Publication date: June 3, 2010
    Applicants: OMRON CORPORATION, DOSHISYA UNIVERSITY
    Inventors: Hidetoshi Nishio, Yoshikazu Mori, Yoshitaka Tsurukame, Takayuki Kawamoto, Yoshiaki Watanabe, Takahiko Yanagitani
  • Publication number: 20100081012
    Abstract: A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.
    Type: Application
    Filed: July 27, 2009
    Publication date: April 1, 2010
    Applicant: Seagate Technology LLC
    Inventors: Raj Nagappan Thangaraj, Mariana Rodica Munteanu, Erol Girt, Michael J. Stirniman, Thomas Patrick Nolan
  • Publication number: 20100079555
    Abstract: Provided is a lead-containing perovskite-type oxide film having principally (100) and/or (001) orientation and containing lead as a chief component, which is over 2 ?m thick and exhibits such hysteresis characteristics that two coercive fields are both positive. A method of producing such an oxide film, a piezoelectric device including such an oxide film, and a liquid ejecting apparatus provided with such a piezoelectric device are also provided.
    Type: Application
    Filed: September 29, 2009
    Publication date: April 1, 2010
    Inventor: Takami ARAKAWA
  • Publication number: 20100051447
    Abstract: A simple, economical sol-gel method was invented to produce thick and dense lead zirconate titanate (PZT) thin films that exhibit the stoichiometric chemical composition and unprecedented electrical and dielectric properties. The PZT films are the foundation of many microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) for micro/nano sensors and actuators applications.
    Type: Application
    Filed: November 6, 2007
    Publication date: March 4, 2010
    Applicant: DREXEL UNIVERSITY
    Inventors: Wei-Heng Shih, Wan Y. Shih, Zuyan Shen, Huidong Li, Xiaotong Gao
  • Publication number: 20100039481
    Abstract: A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate.
    Type: Application
    Filed: August 12, 2009
    Publication date: February 18, 2010
    Inventors: Takamichi Fujii, Takayuki Naono
  • Publication number: 20090255804
    Abstract: When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively. 400=Ts (° C.
    Type: Application
    Filed: April 8, 2009
    Publication date: October 15, 2009
    Inventors: Takayuki NAONO, Takamichi FUJII