Abstract: A magnetron circuit of a rectangular type is disposed on a lower surface of a rectangular target. A half of the target is covered with a shield plate, so that sputtering particles sputtered from an erosion region (a region with a maximized magnetic flux density) therebelow is blocked so as not to fly toward a substrate. The substrate is disposed at a level so as to be located in a plasma region of a vacuum chamber, and sputtering particles (ZnO) sputtered from a region exposed from the shield plate in the erosion region is caused to be incident on a surface of the substrate. When a gas pressure is lowered, a mean free path of each of the sputtering particles is lengthened to cause a large amount of high-energy sputtering particles to be incident. As a result, a hexagonal crystal particle having a plane that is a crystal plane hardly damaged by incidence of the high-energy sputtering particles is preferentially grown to form a c-axis in-plane oriented film.

Abstract: The present invention provides a method to design, manufacture and structure a multi-component energy device having a unified structure, wherein the individual components are chosen from the list consisting of electrochemical cells, photovoltaic cells, fuel-cells, capacitors, ultracapacitors, thermoelectric, piezoelectric, microelectromechanical turbines and energy scavengers. Said components are organized into a structure to achieve an energy density, power density, voltage range, current range and lifetime range that the single components could not achieve individually, i.e. to say the individual components complement each other. The individual components form a hybrid structure, wherein the elements are in electrical, chemical and thermal conduction with each other.

Abstract: A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.

Abstract: Provided is a lead-containing perovskite-type oxide film having principally (100) and/or (001) orientation and containing lead as a chief component, which is over 2 ?m thick and exhibits such hysteresis characteristics that two coercive fields are both positive. A method of producing such an oxide film, a piezoelectric device including such an oxide film, and a liquid ejecting apparatus provided with such a piezoelectric device are also provided.

Abstract: A simple, economical sol-gel method was invented to produce thick and dense lead zirconate titanate (PZT) thin films that exhibit the stoichiometric chemical composition and unprecedented electrical and dielectric properties. The PZT films are the foundation of many microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) for micro/nano sensors and actuators applications.

Abstract: A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate.

Abstract: When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively. 400=Ts (° C.

Abstract: A two step thin film deposition process is disclosed to provide for the simultaneous achievement of controlled stress and the achievement of preferred crystalline orientation in sputter-deposited thin films. In a preferred embodiment, a first relatively short deposition step is performed without substrate bias to establish the crystalline orientation of the deposited film followed by a second, typically relatively longer deposition step with an applied rf bias to provide for low or no stress conditions in the growing film. Sputter deposition without substrate bias has been found to provide good crystal orientation and can be influenced through the crystalline orientation of the underlying layers and through the introduction of intentionally oriented seed layers to promote preferred crystalline orientation. Conversely, sputter deposition with substrate bias has been found to provide a means for producing stress control in growing films.

Abstract: In a piezoelectric element having a substrate, a lower electrode layered on the substrate, a piezoelectric body made of ceramic layered on top of the lower electrode and an upper electrode layered on the piezoelectric body, wherein a first metal layer is provided between the substrate and the lower electrode, a second metal layer is provided between the lower electrode and the piezoelectric body, and the first metal layer and the second metal layer are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu.

Abstract: The method of manufacturing a piezoelectric element includes the steps of: a lower electrode forming step of forming a lower electrode on a surface of a substrate; a piezoelectric film deposition step of depositing a piezoelectric film made of a piezoelectric material by one of epitaxial growth and oriented growth onto a surface of the lower electrode reverse to a surface adjacent to the substrate; an upper electrode forming step of forming an upper electrode onto a surface of the piezoelectric film reverse to a surface adjacent to the lower electrode; and a polarization direction reversal step of reversing a polarization direction of the piezoelectric film by applying an alternating electric field of an intensity not lower than a coercive electric field of the piezoelectric material, between the upper electrode and the lower electrode, and then applying a direct electric field of an intensity not lower than the coercive electric field in a direction from the upper electrode toward the lower electrode.

Abstract: One objective of the invention is to provide a highly-efficient and reliable piezoelectric thin film device by improving the piezoelectric function of a piezoelectric thin film and obtaining a crystal structure wherein the dependency of a piezoelectric constant, relative to a voltage, is superior, and to also provide a method for manufacturing this piezoelectric thin film device. Another objective of the invention is to provide an inkjet head that satisfactorily exhibits the piezoelectric performance of the piezoelectric thin film device and that has a superior withstand voltage function and driving reliability, and to provide a high quality inkjet recording apparatus on which this inkjet head can be mounted. A piezoelectric thin film device includes: crystal grains that form piezoelectric thin film and grain boundaries that encircle the crystal grains, wherein the same crystal orientation is established for the grain boundaries and the crystal grains.

Abstract: A method of producing a polycrystalline film of a metal compound, AlN or ZnO, on a substrate with a non-zero mean tilt of the c-axis relative to the surface normal of the substrate, is disclosed. The method comprises deposition of crystallites of said compound onto the substrate that has a suitable surface for crystal growth with tilted c-axis relative to the surface normal by operating a deposition system designed for sputtering of metal atoms from a target, in a gas mixture of inert gas and nitrogen or oxygen, respectively, at a process pressure such that the mean free path of sputtered metal atoms is comparable or larger than the target to substrate distance, the geometry of the deposition system being such that there exists at least one arbitrary area on the substrate where the distribution of the depositing flux is asymmetric relative to the surface normal at that area.

Abstract: A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.

Abstract: A method and system for forming FBAR filters for different frequency bands with film stacks of different thicknesses, where at least some layers of different thicknesses are formed substantially at the same time, during a process operation are described herein.

Abstract: A method of manufacturing a surface acoustic device that has a surface acoustic wave filter including comb-like electrodes, electrode pads, and wiring patterns formed on a joined substrate produced by joining a piezoelectric substrate and a supporting substrate to each other. This method includes the steps of: activating at least one of the joining surfaces of the piezoelectric substrate and the supporting substrate; and joining the piezoelectric substrate and the supporting substrate in such a manner that the activated joining surfaces face each other.

Abstract: A process for manufacturing a resonator including the steps of: forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion; forming an insulating layer having its upper surface flush with the upper part of the second portion; forming by a succession of depositions and etchings a beam of a conductive material above the second portion, the beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above the beam portion located above the second portion; and removing the second portion.

Abstract: The present invention relates to composite piezoelectric apparatus, transducers and methods of manufacture. In an embodiment, a composite piezoelectric apparatus has a sacrificial base and pillar array. Different volume percents of piezoelectric material are used in the sacrificial base and pillar array. A first volume percent in the base is lower than the second volume percent in the pillar array. In this way, the sacrificial base can be easily removed from the pillar array after the base and pillar array are sintered in the manufacture of a final composite piezoelectric transducer. A method of manufacturing a composite piezoelectric transducer from a sacrificial base and pillar array and a composite piezoelectric transducer made by the method are provided. A composite piezoelectric transducer stack is provided.

Abstract: A piezoelectric porcelain composition containing a complex oxide having a perovskite structure mainly composed of Pb, Zr, and Ti; and the following component (a) and/or (b), or component (A) and/or (B): (a) Ag and/or an Ag compound, and Mo and/or an Mo compound (b) silver molybdate [Ag2MoO4] (A) Ag and/or an Ag compound, Mo and/or an Mo compound, and W and/or a W compound (B) silver molybdate-tungstate [Ag2Mo(1?X)WXO4](where X is a number from 0.3 to 0.

Abstract: The present invention provides a composite piezoelectric transducer having a piezoelectric ceramic, an organic polymer, and an electrode group formed only on surfaces of the piezoelectric ceramic. The groove is formed, having a depth 50% to 90% of the thickness of the piezoelectric ceramic. A ratio, between a width of a non-diced area formed by forming the groove on the piezoelectric ceramic and the depth of the groove is 0.2 to 0.7. An organic polymer is filled in the groove formed in the piezoelectric ceramic in a state including bubbles. The electrode group comprises a first electrode and a second electrode, the first electrode being formed on a first surface of the piezoelectric ceramic, and the second electrode being formed on a second surface of the piezoelectric ceramic, a side surface thereof, or on the second surface, the side surface and the first surface, the second surface being opposite to the first surface in the direction of the thickness of the piezoelectric ceramic.

Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.

Abstract: A method for applying a coating (23) to a part of a surface of a lamp (20). The aim is to provide a simple manner of applying exact coatings to parts of surfaces with complicated designs. To this end, the lamp is vacuum-coated. The parts of the surface of the lamp (20) that are not to be coated are covered by a mask (3) and at least one coat is applied to the non-covered parts of the surface. The mask (3) is located at a predetermined distance (d) from the part of the surface of the lamp (20) and the mask (3) is oriented in relation to an illumination element (2) or a base (21) of the lamp (20). The invention also relates to a coated lamp that is produced according to a method of this type.

Abstract: A color shifting composition and method useful as a coating on a surface. The composition comprises a layer of piezoelectric material disposed on the surface and a layer of electrically conductive disposed on the layer of piezoelectric material. A mechanism is included for changing an electromagnetic property of the layer of piezoelectric material. Thus, the surface has a first reflective or refractive property at one setting of the mechanism and another reflective or refractive property at another setting of the mechanism. In the illustrative embodiment, the layer of piezoelectric material and the layer of electrically conductive material are sufficiently thin to be transparent to electromagnetic energy in the frequencies of interest. In the illustrative embodiment, the mechanism for changing an electromagnetic property of the layer of piezoelectric material is a source of the electrical potential.

Abstract: In a manufacturing method for a piezoelectric actuator a first electrode layer is formed on substrate, a ferroelectric thin film is formed on the first electrode layer, and an inorganic protective layer 4 is formed on the ferroelectric thin film. Then, the inorganic protective layer 4 and the ferroelectric thin film are heat-treated under an oxygen containing atmosphere, and a second electrode layer is formed on an oxidation diffusion layer, wherein the oxidation diffusion layer is formed on a surface of the ferroelectric thin film as a result of component diffusion of the ferroelectric thin film and oxidation of the inorganic protective layer 4 due to the heat treatment. By using this method, it is possible to improve ferroelectricity without deterioration or cracking of a surface of the ferroelectric thin film.

Abstract: A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 &mgr;m or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably.

Abstract: A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by depositing the CMO memory material at relatively low temperatures that give an amorphous film, then to later melt and re-crystallize the CMO memory material with a laser (laser annealing).

Abstract: The invention embodies a method and apparatus for controlling the thickness of a dielectric film formed by physical vapor deposition (PVD). The method compensates for the continuously varying electrical load conditions inherent in dielectric deposition via PVD. The method can be implemented through three different stages. Initially, the system power supply can be configured to operate in either constant current or constant voltage mode, herein referred to as constant supply parameter mode. Next, a gas composition which minimizes excursions in system impedance under these conditions is empirically determined. Finally, a test deposition can be performed using the constant parameter power supply mode and the gas mixture. This deposition is performed while tracking and summing the energy delivered to the system. The thickness of the deposited film is subsequently measured, and from these data a thickness-per-unit-energy relationship is determined.

Abstract: A process for fabricating piezoelectric elements each having a wrap-around electrode to be used in a differential actuator design where electrical connection is made to the bottom electrode of the element from the top surface of the element. The wrap-around electrode is formed during the creation of the elements instead of on an element by element basis.

Abstract: Tunable dielectric thin films are provided which possess low dielectric losses at microwave frequencies relative to conventional dielectric thin films. The thin films include a low dielectric loss substrate, a buffer layer, and a crystalline dielectric film. Barium strontium titanate may be used as the buffer layer and the crystalline dielectric film. The buffer layer provides strain relief during annealing operations.

Abstract: First, a sputtering process is performed in a chamber using a target containing a plurality of elements to form at a sputtering surface of the target an erosion area different from that formed under a predetermined deposition condition for depositing a desired sputtered film. Next, the sputtered film is deposited on a surface of a sample under the predetermined deposition condition.

Abstract: The present invention pertains to methods for preventing metal or metal-derived material from flaking during sputter processing of substrates. Methods of the invention are particularly useful for non-planar sputter targets. The magnetic field configuration in a sputter apparatus is modulated during a pasting process. Flaking from regions of the target, shield, or other internal components of the sputter apparatus is inhibited by pasting methods which include encapsulation and optionally removal of material, for example by erosion via high density plasma.

Abstract: A method of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film on a surface of some other material, the method including the step of: performing successive sputtering cycles, each cycle including sputtering at a first gas pressure so as to achieve a predetermined first thickness, and sputtering at a second, different gas pressure, so as to obtain a predetermined second thickness. The thin film so deposited has an average stress intermediate between the first stress and the second stress, an average stress that can be made to be approximately equal to a predetermined intermediate stress by a judicious choice of the time for sputtering at each of the two pressures. Usually, the thin film is built up incrementally, using many successive cycles of sputtering at first the first gas pressure and then the second gas pressure.

Abstract: An object of the present invention is to provide a ferroelectric capacitor which shows excellent ferroelectricity. A silicon oxidation layer 4, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 15 are formed on a silicon substrate 2. The lower electrode 12 is made of palladium oxide. Also, the upper electrode 15 is made by palladium oxide. Since palladium oxide prevents leakage of oxygen contained in the ferroelectric layer 8. So that, a ferroelectric capacitor offers excellent ferroelectricity can be realized.

Abstract: A method and a device fabricated according to the method, the method being of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film, the method including the steps of: determining a first gas pressure at which the magnetron sputtering is stable and results in the material being deposited having a first stress; determining a second gas pressure at which the sputtering is stable and results in the material being deposited having a second stress, the second stress having a value that is less than a predetermined, desired intermediate stress; and performing successive sputtering cycles, each cycle including sputtering at the first gas pressure so as to achieve a predetermined first thickness, and sputtering at the second gas pressure so as to obtain a predetermined second thickness.

Abstract: A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.

Abstract: The present invention provides a thin piezoelectric film having a high piezoelectric strain constant and a good adhesion with a lower electrode which can be produced without being cracked. The present invention also provides an ink jet recording head comprising this thin piezoelectric film as a vibrator. The thin piezoelectric film element of the present invention comprises a PZT film 14 made of a polycrystalline substance, and an upper electrode 16 and a lower electrode 12 arranged with the PZT film interposed therebetween. The grain boundary of the crystalline constituting the PZT film is present almost perpendicular to the surface of the electrode. Further, the orientation of the crystalline constituting the PZT film is controlled to a desired range.

Abstract: A quality-assurance method is described that is useful in the fabrication of piezoelectric films of electronic devices, particularly resonators for use in RF filters. For example, the method comprises determining the surface roughness of an insulating layer on which the piezoelectric film is to be deposited and achieving a surface roughness for the insulating layer that is sufficiently low to achieve the high-quality piezoelectric film. According to one aspect of the invention, the low surface roughness for the insulating layer is achieved with use of a rotating magnet magnetron system for improving the uniformity of the deposited layer. According to other aspects of the invention, the high-quality piezoelectric film is assured by optimizing deposition parameters including determination of a “cross-over point” for reactive gas flow and/or monitoring and correcting for the surface roughness of the insulating layer pre-fabrication of the piezoelectric film.

Abstract: A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.

Abstract: A method for forming a PZT (lead zirconate titanate: Pb(ZrxTi1−x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.

Abstract: The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may be carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C.

Abstract: A multi-layer ferroelectric thin film includes a nucleation layer, a bulk layer, and an optional cap layer. A thin nucleation layer of a specific composition is implemented on a bottom electrode to optimize ferroelectric crystal orientation and is markedly different from the composition required in the bulk of a ferroelectric film. The bulk film utilizes the established nucleation layer as a foundation for its crystalline growth. A multi-step deposition process is implemented to achieve a desired composition profile. This method also allows for an optional third composition adjustment near the upper surface of the film to ensure compatibility with an upper electrode interface and to compensate for interactions resulting from subsequent processing.

Abstract: The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125° C. and about 500° C.