Ferromagnetic Patents (Class 204/192.2)
  • Patent number: 10553410
    Abstract: A method includes performing an etching process in a first process module, moving a workpiece formed by the etching process from the first process module to a second process module, and performing a film forming process on the workpiece in the second process module. In the performing the film forming process, an insulating film is formed on a first surface and a second surface of a laminated portion by plasma of a processing gas that contains hydrogen. In the performing the film forming process, an internal pressure of the second process module is 200 mTorr or more, and a hydrogen partial pressure of the second process module is 15 mTorr or less. The performing the etching process, the moving the workpiece, and the performing the film forming process are consistently performed in a state where oxygen is exhausted.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: February 4, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuhiko Saito, Takenao Nemoto
  • Patent number: 10439592
    Abstract: A magnetoresistance effect device includes a magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer of which a direction of magnetization is changeable relative to a direction of magnetization of the fixed layer, and a spacer layer sandwiched between the fixed and free layers, a first signal line configured to generate a high frequency magnetic field when a high frequency current flows and apply the field to the magnetization free layer, and a DC application terminal configured to be capable of connecting a power supply for applying a DC current or voltage in a stacking direction of the element, and the element is disposed with respect to the terminal so the DC current flows from the fixed layer to the free layer in the element or so the DC voltage at which the magnetization fixed layer is higher in potential than the magnetization free layer is applied.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: October 8, 2019
    Assignee: TDK CORPORATION
    Inventors: Naomichi Degawa, Takekazu Yamane
  • Patent number: 10428416
    Abstract: Provided are a coating film, a manufacturing method for the same, and a PVD device that not only sufficiently improve the balance of low-friction properties and wear resistance, but also improve chipping resistance (defect resistance) and peeling resistance. This coating film coats a substrate surface, wherein a hard carbon layer is formed extending in columns-shape perpendicular to the substrate when observed in a cross-sectional bright-field TEM image, the hard carbon layer is formed using a PVD method, and the ID/IG ratio is 1-6 when the hard carbon layer is measured using Raman spectroscopy, said ratio being the ratio of the Raman spectrum D band peak area intensity and G band peak area intensity.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: October 1, 2019
    Assignees: NIPPON ITF, INC., NIPPON PISTON RING CO., LTD.
    Inventors: Hideki Moriguchi, Tadashi Saito, Yoshikazu Tanaka, Tetsumi Arahi, Katsuaki Ogawa, Takahiro Okazaki, Hiroyuki Sugiura, Yoshihiro Ito
  • Patent number: 10360940
    Abstract: Subject-matter is that between an inner edge and an outer edge of a lead-in area, are created by mechanical means grooves in the form of concentric circles around the central axis with the profile of the letter “V” in the protective layer, wherein these grooves have peaks and edges are created in such a way that the groove with the largest possible diameter of the circle does not exceed the inner part of the outer edge and the groove with the smallest possible diameter of the circle does not exceed the inner edge of the lead-in area, wherein the density of the grooves is such that edges of the grooves are touching each other on the surface of the protective layer and between the individual edges of the grooves there is no area undamaged by the grooves. Non-standard audio discs and video discs are manufactured by pressing from the matrix, they contain lead-in area data area and lead-out area and in the area with the radius from 18.00+1 mm to 23.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: July 23, 2019
    Assignee: IMI TECHNOLOGY, S.R.O.
    Inventors: Ivan {hacek over (S)}afárik, Milan Zachar, Ivan {hacek over (S)}útovský
  • Patent number: 10361363
    Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: July 23, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yuichi Otani, Takuya Seino
  • Patent number: 10332661
    Abstract: The invention provides rare earth-free permanent magnetic materials and methods of making them. The materials can be used to produce magnetic structures for use in a wide variety of commercial applications, such as motors, generators, and other electromechanical and electronic devices. Magnets fabricated using the materials can be substituted for magnets requiring rare earth elements that are costly and in limited supply. The invention provides two different types of magnetic materials. The first type is based on an iron-nickel alloy that is doped with one or more doping elements to promote the formation of L10 crystal structure. The second type is a nanocomposite particle containing magnetically hard and soft phases that interact to form an exchange spring magnetic material. The hard phase contains Fe or FeCo, and the soft phase contains AlMnC.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: June 25, 2019
    Assignees: Northeastern University, Carnegie Mellon University
    Inventors: Laura H. Lewis, Katayun Barmak
  • Patent number: 10325710
    Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: June 18, 2019
    Assignee: IMEC vzw
    Inventors: Johan Swerts, Sebastien Couet
  • Patent number: 10238512
    Abstract: Cobalt in oxidized state for use as anti-artifact layer (4) covering a metallic substrate (1) of a medical device for reducing the production of artifacts in MRI caused by the magnetic property of the (1), wherein the anti-artifact layer (4) is present at outermost surface of the metallic substrate (1) and has at least 30% of cobalt ratio (at % Co) to the total amount of transition metallic atoms present therein, and at least 90% of cobalt atoms present within the anti-artifact layer (4) are converted into at least one of Co(II) oxidized state and Co(III) oxidized state.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: March 26, 2019
    Inventor: Haroun Frid
  • Patent number: 10213836
    Abstract: A soft magnetic nanoparticle comprising an iron aluminide nanoalloy of the DO3 phase as a core encapsulated in an inert shell made of alumina.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: February 26, 2019
    Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
    Inventors: Jerome Vernieres, Maria Benelmekki Erretby, Jeong-Hwan Kim, Rosa Estela Diaz Rivas, Mukhles Ibrahim Sowwan
  • Patent number: 10211034
    Abstract: A fabrication method that includes cryogenically cooling a multi-layered structure, which includes a barrier layer, in a multi-purpose chamber having a single enclosure around at least one sputtering target and a substrate support. The method also includes depositing a ferromagnetic layer over the barrier layer of the cryogenically cooled multi-layered structure in the single enclosure when the multi-layered structure is supported on the substrate support.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: February 19, 2019
    Assignee: Seagate Technology LLC
    Inventors: Jae-Young Yi, Eric W. Singleton
  • Patent number: 10147447
    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: December 4, 2018
    Assignee: Seagate Technology LLC
    Inventors: Eric Walter Singleton, Zhiguo Ge, Shaun Eric McKinlay, Jae-Young Yi
  • Patent number: 10134726
    Abstract: A diode string having a plurality of diodes for ESD protection of a CMOS IC device comprises a first diode and a last diode in the diode string, wherein the first diode and the last diode are both formed on a bottom layer in a silicon substrate, and remaining diodes in the diode string. The remaining diodes are formed on a top layer placed on top of the bottom layer. The diode string further comprises a plurality of conductive lines that connect the first diode and the last diode on the bottom layer sequentially with the remaining diodes on the top layer to form a three dimensional (3D) structure of the diode string.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: November 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Che Tsai, Jam-Wem Lee
  • Patent number: 10037777
    Abstract: A recording medium comprising a dielectric magnetic layer, the dielectric magnetic layer comprising anisotropic ions having a difference in a single ion contribution to magnetic anisotropy (?K/ion) between a ground state and an excited state of said anisotropic ions equal to at least 0.1 cm?1 (0.0124 meV/ion) at 20° C. (68° F.), wherein the effective Gilbert damping (?) of said dielectric magnetic layer is equal to at least 0.01.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: July 31, 2018
    Assignee: UNIWERSYTET W BIALYMSTOKU
    Inventors: Andrzej Stupakiewicz, Krzysztof Szerenos
  • Patent number: 10020016
    Abstract: A magnetic recording medium including a magnetic recording layer of a granular structure and having a large thickness as well as excellent magnetic properties is provided. The perpendicular magnetic recording medium includes a non-magnetic substrate and a magnetic recording layer, wherein the magnetic recording layer includes first magnetic recording layers on the side of the non-magnetic substrate and second magnetic recording layers, the first magnetic layers have a granular structure including first magnetic crystal grains containing an ordered alloy and a first non-magnetic segregant surrounding the first magnetic crystal grains and containing carbon; and the second magnetic layers have a granular structure including second magnetic crystal grains containing an ordered alloy and a second non-magnetic segregant surrounding the second magnetic crystal grains and containing Zn and O.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: July 10, 2018
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Shinji Uchida, Takehito Shimatsu
  • Patent number: 9963778
    Abstract: Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: May 8, 2018
    Assignee: International Business Machines Corporation
    Inventors: Hans-Juergen Eickelmann, Thorsten Muehge, Erik Rueger, Markus Schmidt
  • Patent number: 9905752
    Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: February 27, 2018
    Assignees: DENSO CORPORATION, TOHOKU UNIVERSITY
    Inventors: Toshifumi Yano, Kenichi Ao, Yasuo Ando, Mikihiko Oogane, Takafumi Nakano
  • Patent number: 9858951
    Abstract: A method provides a read sensor stack including an antiferromagnetic (AFM) layer, a pinned layer on the AFM layer, a free layer, and a nonmagnetic layer between the free and pinned layers. Providing the AFM layer includes depositing an AFM layer first portion at a first elevated temperature and at a rate of at least 0.1 Angstrom/second. This AFM layer first portion is annealed in-situ at at least one hundred degrees Celsius. An AFM sublayer is deposited at an elevated temperature and at a sublayer deposition rate of less than 0.1 Angstrom/second. The already-deposited portion of the AFM layer is annealed in-situ at at least one hundred degrees Celsius and less than five hundred degrees Celsius. The sublayer depositing and annealing steps may be repeated in order at least once to provide an AFM layer second portion that has multiple sublayers and is thinner than the AFM layer first portion.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: January 2, 2018
    Assignee: WESTERN DIGITAL (FREMONT), LLC
    Inventors: Yuankai Zheng, Qunwen Leng, Xin Jiang, Zhitao Diao, Christian Kaiser
  • Patent number: 9859357
    Abstract: A magnetic laminating structure and process includes alternating layers of a magnetic material and a multilayered insulating material, wherein the multilayered insulating material is intermediate adjacent magnetic material layers and comprises a first insulating layer abutting at least one additional insulating layer, wherein the first insulating layer and the at least one additional insulating layer comprise different dielectric materials and/or are formed by a different deposition process, and wherein the layers of the magnetic material have a cumulative thickness greater than 1 micron.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: January 2, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 9850559
    Abstract: The present invention provides a permanent magnet suitable as a variable flux magnet for a variable magnetic flux motor. A permanent magnet comprising R (R is composed of 75 at % or more of Nd and 25 at % or less of at least one element selected from the group consisting of Y, Ce, La, Pr, Sm, Eu, Gd, Er, Tm, Yb and Lu), Fe and B as the main component, wherein, said permanent magnet is composed of a main phase of a crystal structure represented by R2Fe14B, a ratio of the element R to all constituent element satisfies 11.8 at %?R?12.2 at %, a cross-sectional area ratio Are of the sub-phase with a higher concentration of R than that of the main phase to the whole magnet structure satisfies 0%<Are?1.3%, and a cross-sectional area ratio Ama of the main phase to the whole magnet structure is 97%?Ama.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: December 26, 2017
    Assignee: TDK CORPORATION
    Inventors: Daisuke Tanaka, Yasushi Enokido
  • Patent number: 9767830
    Abstract: An apparatus according to one embodiment includes a magnetic sensor structure, a magnetic shield having at least one laminate pair comprising a magnetic layer and an electrically nonconductive nonmagnetic layer, and a nonmagnetic spacer layer between the sensor structure and the magnetic shield. In one embodiment, a deposition thickness of the nonconductive nonmagnetic layer in each laminate pair is about 10% or less of a total deposition thickness of the laminate pair. In another embodiment, a deposition thickness of the nonconductive nonmagnetic layer in each laminate pair is between about 1 and about 12 nanometers. In yet another embodiment, the magnetic shield has at least one second laminate pair, and a nonlaminated magnetic portion sandwiched between the at least one laminate pair and the at least one second laminate pair.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: September 19, 2017
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Calvin S. Lo, Andrew C. Ting
  • Patent number: 9745645
    Abstract: A method of preparing silver nanoparticles, including silver nanorings. A zinc oxide thin film is formed initially by direct-current sputtering of a zinc target onto a substrate. A silver thin film is then formed by a similar sputtering technique, of a silver target onto the zinc oxide thin film. After that, the silver thin film is subject to an annealing treatment. The temperature, duration and atmosphere of the annealing treatment can be varied to control the average particle size, average distance between particles (density), particle size distribution of the silver nanoparticles. In at least one embodiment, silver nanoparticles of ring structure are produced.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: August 29, 2017
    Assignee: King Fahd University of Petroleum and Minerals
    Inventors: Qasem Ahmed Drmosh, Mohammad Kamal Hossain, Nouar Amor Tabet
  • Patent number: 9720053
    Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: August 1, 2017
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Konstantin Nikolaev, Victor Sapozhnikov, Taras Pokhil, Jae-Young Yi, Mohammed Patwari, Eric W. Singleton
  • Patent number: 9691425
    Abstract: A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: June 27, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert E. Fontana, Jr., William J. Gallagher, Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang, Bucknell C. Webb
  • Patent number: 9567665
    Abstract: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.
    Type: Grant
    Filed: February 2, 2011
    Date of Patent: February 14, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideo Takami, Atsushi Nara, Shin-ichi Ogino
  • Patent number: 9564576
    Abstract: Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: February 7, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Kamal M. Karda, F. Daniel Gealy, D. V. Nirmal Ramaswamy, Chandra V. Mouli
  • Patent number: 9449633
    Abstract: A recording medium having improved signal-to-noise ratio (SNR) capabilities and head-disk interface characteristics includes an etched smoothened underlayer, over which the recording layer is grown. One mechanism for increasing the SNR is by growing more columnar magnetic grain structures within the recording layer, which is facilitated by a smoother underlayer template.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: September 20, 2016
    Assignee: WD Media, LLC
    Inventors: Shahid Pirzada, Tomoko Seki, B. Ramamurthy Acharya, Antony Ajan
  • Patent number: 9368134
    Abstract: A method and system for fabricating a magnetic transducer are described. The magnetic transducer includes a pole and a nonmagnetic intermediate layer adjacent to the pole. The pole has a paddle and a pole tip including a plurality of sidewalls. The pole includes a first magnetic pole layer, at least one antiferromagnetic coupling (AFC) structure on the first magnetic pole layer, and a second magnetic pole layer on the AFC structure(s). At least a portion of the first magnetic pole layer resides on the sidewalls of the pole tip. The paddle has a paddle width in a track width direction. The pole tip has a pole tip width in a track width direction that is less than the paddle width.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: June 14, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Ming Sun, Dehua Han, Jose A. Medina, Ming Jiang, Ying Hong, Feng Liu, Jian X. Shen
  • Patent number: 9349407
    Abstract: A method for smoothing a medium includes depositing a magnetic layer onto a base, depositing an overcoat layer onto an outer surface of the magnetic layer, and burnishing an outer surface of the overcoat layer. Further, the method includes at least one of (i) directing a first ion beam comprised of first energetic ions toward the outer surface of the magnetic layer at a first shallow grazing angle and smoothing the outer surface of the magnetic layer via etching engagement between the first ion beam and the outer surface of the magnetic layer; and (ii) directing a second ion beam comprised of second energetic ions toward the outer surface of the overcoat layer at a second shallow grazing angle and smoothing the outer surface of the overcoat layer via etching engagement between the second angled ion beam and the outer surface of the overcoat layer.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: May 24, 2016
    Assignee: HGST NETHERLANDS B.V.
    Inventors: Xing-Cai Guo, Thomas E. Karis, Bruno Marchon, Daryl J. Pocker
  • Patent number: 9328412
    Abstract: An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: May 3, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shin-ichi Ogino, Yuichiro Nakamura
  • Patent number: 9297066
    Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: March 29, 2016
    Assignee: NITTO DENKO CORPORATION
    Inventors: Tomotake Nashiki, Yoshimasa Sakata, Hideo Sugawara, Kenkichi Yagura, Akira Hamada, Yoshihisa Ito, Kuniaki Ishibashi
  • Patent number: 9238862
    Abstract: A method for applying or embedding nanoparticles or microparticles of any substance in a defined manner onto or into a layer to be applied to a substrate surface by plasma coating before, during or after the plasma coating operation in a magnetron or plasmatron. The particles are introduced from the outside into the vacuum chamber of the magnetron or plasmatron via at least one pressure stage. The particles are spatially distributed in the plasma space between the target and the substrate. The particles in the plasma space are preferably exposed to an electric field generating a movement of the particles toward the substrate. It is advantageous for this purpose if the particles are electrically charged before being introduced into the plasma space.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: January 19, 2016
    Assignee: BAM Bundesanstalt fuer Materialforschung und—Pruefung
    Inventor: Uwe Beck
  • Patent number: 9214179
    Abstract: According to one embodiment, a magnetic recording medium includes a substrate, an auxiliary layer formed on the substrate, and at least one perpendicular magnetic recording layer formed on the auxiliary layer. The perpendicular magnetic recording layer includes a magnetic dot pattern. The perpendicular magnetic recording layer is made of an alloy material containing one element selected from iron and cobalt, and one element selected from platinum and palladium. This alloy material has the L10 structure, and is (001)-oriented. The auxiliary layer includes a dot-like first region covered with the magnetic dot pattern, and a second region not covered with the magnetic dot pattern. The first region is made of a (100)-oriented nickel oxide. The second region contains nickel used in the first region as a main component.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: December 15, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomoyuki Maeda, Yousuke Isowaki, Akira Watanabe
  • Patent number: 9050698
    Abstract: A manufacturing method of a carrier for a double-side polishing apparatus for polishing surfaces of a wafer, the carrier having: a carrier body arranged between upper and lower turn tables, the carrier body having a holding hole for holding the wafer; and a ring-shaped resin insert arranged along an inner circumference of the holding hole, the resin insert having an inner circumferential surface to be brought into contact with a peripheral portion of the wafer to be held, the method having the steps of attaching, to the holding hole of the carrier body, a base material for the resin insert not having the inner circumferential surface to be brought into contact with the wafer to be held, and performing inner-circumferential-surface-forming processing on the base material for the resin insert to form the inner circumferential surface to be brought into contact with the peripheral portion of the wafer to be held.
    Type: Grant
    Filed: June 18, 2010
    Date of Patent: June 9, 2015
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Taichi Yasuda, Tatsuo Enomoto
  • Publication number: 20150137904
    Abstract: Provided herein is a microwave device using a magnetic material nano wire array and a manufacturing method thereof, the device including a template having a nano hole array filled with a metal magnetic material.
    Type: Application
    Filed: October 20, 2014
    Publication date: May 21, 2015
    Inventors: Yark Yeon KIM, Han Young YU, Yong Sun YOON, Won Ick JANG
  • Patent number: 9034150
    Abstract: An apparatus and associated method are generally described as a thin film exhibiting a tuned anisotropy and magnetic moment. Various embodiments may form a magnetic layer that is tuned to a predetermined anisotropy and magnetic moment through deposition of a material on a substrate cooled to a predetermined substrate temperature.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: May 19, 2015
    Assignee: Seagate Technology LLC
    Inventors: Venkateswara Rao Inturi, Wei Tian, Joseph Mundenar
  • Patent number: 9034149
    Abstract: A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: May 19, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Min Zheng, Kunliang Zhang, Min Li
  • Publication number: 20150068887
    Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate.
    Type: Application
    Filed: January 16, 2014
    Publication date: March 12, 2015
    Inventors: Makoto NAGAMINE, Youngmin EEH, Koji UEDA, Daisuke WATANABE, Kazuya SAWADA, Toshihiko NAGASE
  • Patent number: 8974648
    Abstract: The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: March 10, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Yuichi Otani, Takashi Nakagawa
  • Patent number: 8968526
    Abstract: There are provided a method for manufacturing a magnetic recording medium which is excellent in terms of both the recording and reproduction characteristics and the thermal fluctuation characteristics without reducing the density and hardness of the perpendicular magnetic layer; a magnetic recording medium; and a magnetic recording and reproducing apparatus with which an excellent recording density is achieved, wherein, in the method for manufacturing the magnetic recording medium, at least a portion of the perpendicular magnetic layer 4 is formed as a magnetic layer having a granular structure that contains Co as a major component and also contains an oxide of at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg; a target for forming the perpendicular magnetic layer 4 by the sputtering process is prepared so as to include an oxide of Co and a compound of Co and at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg, an
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: March 3, 2015
    Assignees: Showa Denko K.K., Kabushiki Kaisha Toshiba, Tohoku University
    Inventors: Shingo Sasaki, Shin Saito, Migaku Takahashi, Atsushi Hashimoto, Yuzo Sasaki, Gohei Kurokawa, Tomoyuki Maeda, Akihiko Takeo
  • Publication number: 20150034476
    Abstract: A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.
    Type: Application
    Filed: July 7, 2014
    Publication date: February 5, 2015
    Inventors: Frank M. Cerio, Robert Gabriel Hieronymi
  • Patent number: 8940196
    Abstract: A silicon-based shape memory alloy negative active material includes a silicon-based material precipitated on a Ni2Mn1-XZX shape memory alloy basic material. In the silicon-based shape memory alloy negative active material, X satisfies the relationship 0?X?1 and Z is one of Al, Ga, In, Sn, or Sb.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: January 27, 2015
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Byung-Joo Chung, Chun-Gyoo Lee
  • Patent number: 8932438
    Abstract: The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: January 13, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Koji Tsunekawa, Hiroyuki Hosoya, Yoshinori Nagamine, Shinji Furukawa, Naoki Watanabe
  • Patent number: 8906208
    Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 9, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Toru Kitada, Naoki Watanabe, Motonobu Nagai
  • Patent number: 8877019
    Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: November 4, 2014
    Assignee: Canon Anelva Corporation
    Inventor: Franck Ernult
  • Patent number: 8852412
    Abstract: A magnetron source comprises a target (39) with a sputtering surface and a back surface. A magnet arrangement (30, 32, 19a, 19b) is drivingly moved along the backside of the target (39). A tunnel-shaped magnetron magnetic field is generated between an outer loop (30) and an inner loop (32) of the magnet arrangement. Elongated pivotable or rotatable permanent magnet arrangements (19a, 19b) of the magnet arrangement are provided in an interspace between the outer and inner loops (30, 32) of the overall arrangement.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: October 7, 2014
    Assignee: Oerlikon Advanced Technologies AG
    Inventor: Juergen Weichart
  • Patent number: 8845867
    Abstract: A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: September 30, 2014
    Assignee: TDK Corporation
    Inventors: Shinji Hara, Yoshihiro Tsuchiya, Tsutomu Chou, Tomihito Mizuno
  • Patent number: 8795478
    Abstract: Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiO2 for deposition on the intermediate layer. The top surface of the insulation material (SiO2) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.
    Type: Grant
    Filed: October 18, 2005
    Date of Patent: August 5, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Yoshinori Honda, Takayuki Ichihara, Hiroyuki Nakagawa, Kiwamu Tanahashi
  • Patent number: 8778146
    Abstract: A method for manufacturing with high productivity a magnetic recording medium having an MgO film is disclosed which uses a DC sputtering method. The method suppresses oxygen deficiency in the MgO film, and the MgO film has high crystallinity. The method includes at least a process of forming an intermediate layer of MgO on a nonmagnetic base by a reactive DC sputtering method that uses a target containing Mg and MgO in an oxygen-containing gas, and a process of forming a magnetic recording layer containing an L10 ordered alloy on the intermediate layer.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: July 15, 2014
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Shinji Uchida
  • Patent number: 8758580
    Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: June 24, 2014
    Assignee: Vaeco Inc.
    Inventor: Richard DeVito
  • Patent number: 8747629
    Abstract: A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative ? to offset the positive ? from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ?2 or (CoB/CoFe)m/CoB where m is ?1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for ? (<5×10?6), RA (1.5 ohm/?m2), and Hc (<6 Oe).
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: June 10, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Hui-Chuan Wang, Tong Zhao, Min Li, Kunliang Zhang