Abstract: A continuous-media perpendicular magnetic recording disk with an oxide-containing granular Co alloy recording layer (RL) having minimal grain size dispersion has an ordered nucleation layer (ONL) formed below RL. The ONL has ordered nucleation sites arranged in a generally repetitive pattern. The nucleation sites are generally surrounded by non-nucleation regions of a different material than the nucleation sites. The Co-alloy grains of the subsequently deposited RL grow on the nucleation sites and the oxide of the RL become generally segregated on the non-nucleation regions. The ordered nucleation sites may be formed of a Ru-containing material and the non-nucleation regions may be formed of an oxide. The ONL is formed by nanoimprint lithography, preferably by a master mold fabricated with a method using self-assembling block copolymers for creating periodic nanometer scale features.

Abstract: A method of manufacturing a perpendicular magnetic head having a writing element that writes magnetic information to a recording medium includes forming a main magnetic pole part generating a magnetic field on a substrate; removing at least a part of the substrate and a material existing at a circumference of the main magnetic pole part to expose an entire circumference of the main magnetic pole part at a surface that becomes an opposing medium surface (ABS) opposite to the recording medium; forming a shield gap film that is made of a nonmagnetic material so as to cover the entire circumference of the main magnetic pole part at least at the surface that becomes the ABS; and forming a shield layer so as to cover an entire circumference of the shield gap film at least at the surface that becomes the ABS.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co2(Mn(1-y)Fey)X (where 0?y?1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.

Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: (Pb1?x+?Mx) (ZryTi1?y)O—??(P) wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3.

Abstract: High magnetic moment films FeCo(X, Y), where X is a transition metal element and Y is a rare earth element are formed using off-axis static deposition techniques. The films have tunable magnetic anisotropy from 0 Oe to greater than 500 Oe that are thermally stable beyond nominal photoresist curing temperatures. By using off-axis static deposited FeCo(X, Y) films as seed layers to normally deposited FeCo films, inplane anisotropy and the magnetic moment can be controlled for specific design needs. Epitaxial-like growth (column-to-column matching) from the off-axis static FeCo(X,Y) seed layers to normally deposited FeCo films is attributed to sustained anisotropy in the entire film.

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract: Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.

Abstract: According to one embodiment, a method for forming at least a portion of a magnetic head includes forming a keeper layer, forming a reference layer, and forming an AFM coupling layer which is positioned between the keeper layer and the reference layer. In addition, forming the reference layer includes forming a layer of CoFe, depositing a layer of CoFeHf which is about 20 atomic % Hf, and depositing a layer of CoFeB such that the layers of CoFeHf and CoFeB are directly adjacent and a ratio of respective physical thicknesses of CoFeHf to CoFeB is less than about 0.66. Other embodiments are also included such as a magnetic head and additional methods for forming at least a portion of a magnetic head.

Abstract: A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

Abstract: A method of forming a uniform thickness layer of a selected material on a surface of a substrate comprises steps of: (a) providing a multi-stage cathode sputtering apparatus comprising a group of spaced-apart cathode/target assemblies and a means for transporting at least one substrate/workpiece past each cathode/target assembly, each cathode/target assembly comprising a sputtering surface oriented substantially parallel to the first surface of the substrate during transport past the group of cathode/target assemblies, the group of cathode/target assemblies adapted for providing different angular sputtered film thickness profiles; and (b) transporting the substrate past each cathode/target assembly while providing different sputtered film thickness profiles from at least some of the cathode/target assemblies, such that a plurality of sub-layers is deposited on the surface of the substrate/workpiece which collectively form a uniform thickness layer of the selected material.

Abstract: A substrate stage that is arranged in a vacuum chamber and that has a substrate mounting surface on which a substrate is mounted, including a first magnetic field applying unit that applies a magnetic field to the substrate, in which the internal magnetization direction of the first magnetic field applying unit and the thickness direction of the substrate match.

Abstract: A patterned perpendicular magnetic recording disk has a pre-patterned disk substrate with pillars and trenches arranged in data regions and servo regions. In the data regions, the height of the data pillars is equal to or greater than the spacing between the data pillars, while in the servo regions the height of the servo pillars is less than the spacing between the servo pillars. A magnetic recording material with perpendicular magnetic anisotropy is deposited over the entire disk substrate, which results in magnetic material on the tops of the data pillars and servo pillars and in the servo trenches. The material in the data trenches is either nonmagnetic or discontinuous. After the application of a high DC magnetic field in one perpendicular direction and a low DC magnetic field in the opposite direction, the resulting disk has patterned servo sectors with servo pillars all magnetized in the same perpendicular direction and servo trenches magnetized in the opposite perpendicular direction.

Abstract: A magnetron unit includes a plurality of first magnet elements each including first magnets which have the same polarity and are provided on two end portions of a yoke plate made of a magnetic material and a second magnet which has a polarity different from that of the first magnets and is provided on a middle portion of the yoke plate, a base plate on which a moving unit is placed to make each of the plurality of first magnet elements move in one direction, and a second magnet element which includes yoke plates made of a magnetic material and fixed to two end portions respectively, of the base plate, a magnet which has the same polarity as that of the second magnet and is placed on the yoke plate and a magnet which has the same polarity as that of the first magnet and is placed on the magnet.

Abstract: A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

Abstract: A perpendicular magnetic recording medium is provided, which has a soft magnetic layer, an under layer, an intermediate layer and a perpendicular magnetic recording layer, and is characterized in that the perpendicular magnetic recording layer is comprised of at least one magnetic layer, which magnetic layer or at least one of which magnetic layers comprises cobalt-based ferromagnetic crystal grains and grain boundaries comprised of an oxide, wherein the ferromagnetic crystal grains further comprise ruthenium. The perpendicular magnetic recording medium has ferromagnetic crystal grains with extremely small grain size and exhibiting enhanced discretion, as well as good perpendicular orientation in the perpendicular magnetic recording layer, and thus, the medium is capable of recording and reproducing information with high density.

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract: The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.

Abstract: A magnetic disk apparatus having a highly sensitive reproducing head and a method for manufacturing the magnetic disk apparatus are disclosed. A spin-value-type multilayer film composed of an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic layer and a free magnetic layer is used as a magnoresistive-effect device for the reproducing head. An antiferromagnetic reaction layer is formed between the antiferromagnetic layer and the ferromagnetic layer. The antiferromagnetic reaction layer is formed of a metallic compound containing oxygen.

Abstract: A high density magnetic recording film by using a rapid thermal annealing process is provided. The high density magnetic recording film includes a substrate; and a ferromagnetic layer formed on the substrate; wherein the rapid thermal annealing process is performed for the ferromagnetic layer at a temperature range of 600 to 800° C. for 5 to 180 seconds with a heating ramp rate of 60 to 100° C./sec so as to obtain the high density magnetic recording film.

Abstract: A perpendicular magnetic recording disk has a granular cobalt alloy recording layer (RL) containing an additive oxide or oxides, an intermediate layer (IL) as an exchange-break layer on the “soft” magnetic underlayer (SUL), and an ultrathin nucleation film (NF) between the IL and the RL. In the method of making the disk, the IL is deposited at a relatively low sputtering pressure, to thereby reduce the roughness of the RL and overcoat (OC), while the NF and RL are deposited at substantially higher sputtering pressures. The resulting disk has good recording properties and improved corrosion resistance over a comparable disk made with an IL deposited at high sputtering pressure and without the NF. The NF may be a discontinuous film with an average thickness of less than about 1 nm.

Abstract: As recording density of sensors is increased, it is desired to lower the areal resistivity (RA) of TMR sensors. Decreasing RA to 1.0 ??m2 or below badly influences the read signal since the interlayer coupling magnetic field (Hint) between the pinned layer and the free layer increases sharply and impedes the free rotation of magnetization of the free layer. According to one embodiment, a tunnel junction type magneto-resistive head solves this problem by having a layered film comprising an underlying layer, a crystalline orientation control layer, an antiferromagnetic layer, a first ferromagnetic layer, an antiparallel coupling layer, a second ferromagnetic layer, an insulation barrier layer, and a third ferromagnetic layer between a lower magnetic shield layer and an upper magnetic shield layer, wherein a crystallographic plane of the antiferromagnetic layer is directed parallel to a film surface by growing the antiferromagnetic layer substantially conformably on the crystalline orientation control layer.

Abstract: The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

Abstract: A method for manufacturing a magnetic storage medium that improves the flatness of the magnetic storage medium. A storage layer is formed on a substrate. Next, a resist mask is formed above the storage layer. Then, a pit is formed in the storage layer using the resist mask. Afterwards, a non-magnetic layer having a thickness that is in accordance with the depth of the pit is formed in the pit and above the resist mask. Subsequently, the resist mask and the non-magnetic layer formed above the resist mask are removed from the storage layer.

Abstract: Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L11-type ordered structure (wherein M represents one or more metal elements except Co and Pt). For example, the Co-M-Pt alloy is a Co—Ni—Pt alloy of which the composition comprises from 10 to 35 at. % of Co, from 20 to 55 at. % of Ni and a balance of Pt. The magnetic thin film is applicable to perpendicular magnetic recording media, tunnel magneto-resistance (TMR) devices, magnetoresistive random access memories (MRAM), microelectromechanical system (MEMS) devices, etc.

Abstract: The invention relates to a granular perpendicular magnetic recording medium comprising a top magnetic layer on a granular layer wherein the magnetic layer comprises a continuous Co alloy film that results in the recording medium having less than 10% CoOx on the surface of the protective overcoat when the recording medium is exposed to 80% relative humidity at 80° C. for 4 days.

Abstract: An in-line film forming apparatus is provided which prevents uneven processing from occurring when reactive plasma treatment or ion irradiation treatment is performed on a substrate held by a carrier. A carrier (25) includes a holder (28) provided with a hole (29) which allows a substrate to be disposed therein, and a plurality of supporting members (30) attached to the periphery of the hole (29) of the holder (28) in an elastically deformable manner, and is capable of detachably holding the substrate fitted into the inside of the supporting members (30) while an outer peripheral portion of the substrate is made to abut on the plurality of supporting members (30). Within a chamber which performs reactive plasma treatment or ion irradiation treatment on the substrate held by the carrier (25), a ring member (32) having an opening (32a) in a position corresponding to the substrate is disposed so as to face at least one surface or both surfaces of the substrate held by the carrier (25).

Abstract: A magnetic recording medium having excellent fly-ability and corrosion resistance is provided in a high yield by controlling protuberant on a medium surface caused by deposition of giant silicon oxide particles, which are created during the film deposition of a granular recording layer including Si and oxygen. In one embodiment of the invention, a recording layer is deposited by a sputtering method using a target which is composed of a mixture of an alloy including at least Co and powdered crystalline SiO2.

Abstract: A perpendicular magnetic recording medium is manufactured having excellent thermal stability and recording performances across the entire disk surface. In one embodiment, the recording layer includes at least two layers deposited by using a reactive sputtering method under an oxygen-containing atmosphere at a deposition rate larger than the second recording layer which is formed on the first recording layer while depositing the first recording layer on the intermediate layer.

Abstract: A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer.

Abstract: A magnetic recording medium of higher coercive force and a manufacturing method thereof are provided by enabling reactive sputtering of stable reproducibility even with the addition of oxygen in the formation of a magnetic film using oxygen addition type reactive sputtering. In one embodiment, a vertical magnetic recording medium having SiC and SiOx (x=1 to 2) is provided. Further, a method of manufacturing a vertical magnetic recording medium including the addition of an Ar gas and an oxygen gas to an SiC-containing target in the step of forming a film of a magnetic layer on a soft magnetic under layer by reactive sputtering is provided.

Abstract: A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

Abstract: Various apparatus and methods are provided for handling and transporting pairs of disks. A transfer tool engages a pair of disks in gap merge orientation along the outer perimeter edge of the disks and maintains the orientation while transferring the pair of disks to a second location where the disks are transferred to other equipment or subjected to processing. Various disks carriers are also provided for handling and transporting multiple pairs of disks in gap merge orientation.

Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially non-zero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

Abstract: The invention provides a perpendicular magnetic recording medium for use in a hard disk drive or a similar apparatus, a method for producing the perpendicular magnetic recording medium, and a magnetic recording and reproducing apparatus. The recording medium has excellent recording and reproducing characteristics and includes at least a non-magnetic substrate, an alignment control layer a perpendicular magnetic layer in which easy-magnetization axes are oriented in a direction virtually normal to a substrate, and a protective layer. The perpendicular magnetic layer containing Co as a predominant component, is formed of at least a first perpendicular magnetic layer formed predominantly from a material containing at least Cr, Pt, and a metal oxide or a semiconductor oxide, a second perpendicular magnetic layer formed predominantly from a CoCr alloy, and a third perpendicular magnetic layer formed predominantly from a CoCrPtB-based alloy.

Abstract: A method for producing a magnetic recording medium in which the noise of the magnetic recording medium is reduced and the thermal stability of the recorded magnetization is improved, while enabling easy writing to be carried out by a recording head, is disclosed. The magnetic recording medium of the present invention includes an underlayer having an hcp crystal structure and a magnetic layer produced by a multilayer lamination of Co/Pt or the like. The deposition rate of the underlayer is equal to or lower than 0.7 nm/second. The magnetic layer contains added silicon oxide at 1 to 10 mol %. The present method includes a step for subjecting the surface of the underlayer to Ar gas mixed with oxygen of a mass/flow rate ratio of 1% to 10% under a gas pressure of 0.1 to 10 Pa for 1 to 10 second(s). The magnetic recording medium may include an orientation control layer and a soft magnetic backing layer. Ku, Ku1, and Ku2 are controlled to provide both of thermal stability and easy writing.

Abstract: A perpendicular magnetic recording medium having a substrate, an amorphous soft underlayer of thickness 30 nm or greater, and a granular magnetic recording layer for perpendicular recording is disclosed. The granular magnetic recording layer includes a non-magnetic region between magnetic grains, wherein the non-magnetic region includes metal nitride or metal carbide and provides exchange decoupling between the magnetic grains. The perpendicular recording medium of this invention reduces DC noise and increases media signal-to-noise ratio; it reduces surface roughness, which in turn reduces the head-to-media spacing and the head-to-amorphous soft underlayer spacing.

Abstract: In a method of manufacturing a magnetic disk including at least a magnetic recording layer on a substrate 1 and used for vertical magnetic recording, in a step of forming, on the substrate 1, the magnetic recording layer composed of a ferromagnetic layer 5 having a granular structure and an exchange energy control layer 7 constituted by a laminated layer formed on the ferromagnetic layer 5, at least the exchange energy control layer 7 is formed through sputtering in an atmosphere of a rare gas having a greater mass than an argon gas. The rare gas having a greater mass than the argon gas is a krypton (Kr) gas, for example. The exchange energy control layer 7 is a laminated layer composed of a first layer containing Co or a Co-alloy and a second layer containing palladium (Pd) or platinum (Pt), for example.

Abstract: For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions at which their projection onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

Abstract: In a manufacturing method of a magneto-optical recording medium formed by laminating a plurality of magnetic layers, there is provided a manufacturing method whereby at least two of the magnetic layers can be properly and individually formed by sputtering the same target means in the same vacuum vessel under different conditions at the time of a sputtering process in accordance with an element composition ratio and/or magnetic characteristics of each layer.

Abstract: The perpendicular magnetic recording medium of the present invention includes a substrate, a non-magnetic layer, a ferromagnetic layer and an antiferromagnetic oxide. The non-magnetic layer is formed on the substrate and the ferromagnetic layer is formed on the non-magnetic layer. The antiferromagnetic oxide is formed in the ferromagnetic layer after the perpendicular magnetic recording medium is annealed by an annealing process. An exchange coupling interaction between the antiferromagnetic oxide and the ferromagnetic materials is introduced.

Abstract: A perpendicular magnetic recording medium is disclosed that exhibits reduced media noise and enhanced thermal stability of recorded magnetization, and thus provides a medium of high recording density and excellent read-write performance. The perpendicular magnetic recording medium comprises a magnetic film on a nonmagnetic substrate. The magnetic film is a multilayered lamination film composed of alternately laminated first magnetic layers of cobalt and second magnetic layers of palladium, the second magnetic layers containing SiO2. By setting a ratio of Ku2 to Ku to a value not smaller than a specified value, the compatibility between the ease of writing-in to the perpendicular magnetic recording medium by a head and the thermal stability of recorded magnetization is more improved.

Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.

Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: (Pb1?x+?Mx) (ZryTi1?y)O???(P) wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3.

Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target according to the composition of the ferroelectric film, by a sputtering technique under conditions satisfying Formulas (1) and (2), or (3) and (4): (Pb1?x+?Mx)(ZryTi1?y)Oz ??(P) wherein M represents at least one kind of element selected from Bi and Lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3, 400 ? Ts (° C.) ? 500 . . . (1) 30 ? D (mm) ? 80 . . . (2), 500 ? Ts (° C.) ? 600 . . . (3) 30 ? D (mm) ? 100 . . . (4), wherein Ts (° C.) represents the film formation temperature, and D (mm) represents the spacing distance between the substrate and the target.

Abstract: A perpendicular magnetic recording disk has an improved recording layer of a granular CoPtCr-based ferromagnetic alloy with inter-granular material made up of one or more oxides of Cr and one or more oxides of one or more of a segregant of Si, Ta, Ti, B, Nb or Hf, wherein the amount of oxygen present in the recording layer is greater than about 22 atomic percent and less than about 35 atomic percent. The amount of oxygen in the recording layer is substantially greater than the amount required for the stoichiometric oxide or oxides of the segregant or segregants, and a substantial portion of the oxygen present in the recording layer is present in the inter-granular material. The recording layer exhibits high signal-to-noise ratio (SNR), a coercivity Hc greater than about 5000 Oe and a nucleation field Hn greater (more negative) than about ?1500 Oe.

Abstract: Embodiments of the present invention provide a perpendicular magnetic recording medium with less medium noise, excellent overwrite characteristics, and scratch resistance. According to one embodiment, when an Ar gas with addition of a micro-amount of oxygen is used upon forming an upper Ru intermediate layer, a micro-structure of a magnetic layer formed thereon can be formed in a state where no magnetic oxide region is segregated and the magnetic crystal grains are isolated. In this case, a gas pressure for forming the upper intermediate layer is set to 5 Pa or more and 12 Pa or less which is a region much higher compared with 0.5 Pa or more and 1 Pa for the lower Ru intermediate layer.

Abstract: A perpendicular magnetic recording medium is disclosed in which a soft magnetic layer used as a low Ku layer can be stably produced with high performance. Thermal stabilization of magnetization, ease of writing by a magnetic head, and SNR also are improved. A method of manufacturing the medium is disclosed. The perpendicular magnetic recording medium includes at least a nonmagnetic underlayer, a magnetic recording layer, and a protective layer formed in this order on a nonmagnetic substrate. The magnetic recording layer includes a low Ku layer having a relatively small perpendicular magnetic anisotropy constant (Ku value), and a high Ku layer in which the Ku value is relatively large, and the low Ku layer includes a soft magnetic thin film including an iron group element-based microcrystal structure, in which a nitrogen element is added to a ferromagnetic material mainly containing one of metals of Co, Ni and Fe or an alloy of the metal.

Abstract: A method for manufacturing a magneto-optical recording medium in which reading of recorded information is performed through domain wall displacement in a reproduction layer is provided, in which magnetic separation of groove side-wall portions is performed more reliably; as a result a magneto-optical recording medium with satisfactory recording and reproduction characteristics can be provided.