Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: The invention relates to a high-power pulsed magnetron sputtering process (1), wherein within a process chamber (2) by means of an electrical energy source (3) a sequence of complex discharge pulses (4) is produced by applying an electrical voltage (V) between an anode (5) and a cathode (6) in order to ionize a sputtering gas (7). Said complex discharge pulse (4) is applied for a complex pulse time (?). The cathode (6) has a target (8) comprising a material to be sputtered for the coating of a substrate (9), and said complex discharge pulse (4) includes an electrical high-power sputtering pulse (10) having a negative polarity with respect to the anode (5) and being applied for a first pulse-time (?1), the high-power sputtering pulse (10) being followed by an electrical low-power charge cleaning pulse (11) having a positive polarity with respect to the anode (5) and being applied for a second pulse-time (?2).

Abstract: There is provided a low-cost self-sputtering apparatus which is so arranged that, even when an arc discharge occurs for some reasons or other, failure in electric discharge can be prevented. The self-sputtering apparatus has a vacuum chamber in which a substrate to be processed is disposed; a target to be disposed opposite to the substrate; a sputtering power source for charging the target with a negative DC current; an anode shield which is disposed in a manner to enclose a space in front of the target and which is charged with a positive electric potential; and a gas introduction means for introducing a predetermined sputtering gas into the vacuum chamber. The apparatus further has an LC resonance circuit in parallel with an output circuit from the DC power source to the target.

Abstract: A film forming apparatus and a film forming method includes: a vacuum chamber; a holder for a film formation object, the holder being rotatably provided in the vacuum chamber; and a sputter source capable of holding a plurality of targets, the sputter source being spinnably provided so that the opposed area of the target with respect to the film formation object can be varied. They can perform uniform and efficient film formation in accordance with the size of a film formation object using a simple configuration, with less possibility of contamination and easy maintenance.

Abstract: Provided are a thin film forming apparatus and a thin film forming method. The thin film forming apparatus comprises a first electrode provided for etching a thin film formed on the substrate, a second electrode provided for forming a plasma in the internal space, a third electrode provided for focusing the plasma, and a control unit controlling a voltage to be applied to the first through third electrodes.

Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

Abstract: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

Abstract: A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

Abstract: When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face to each other, the film is formed with surrounding the substrate with a wall surface having the constituent elements of the target adhering thereto, and applying a physical treatment to the wall surface to cause the components adhering to the wall surface to be released into the film formation atmosphere.

Abstract: A method of responding to voltage or current transients during processing of a wafer in a plasma reactor at each of plural RF power applicators and at the wafer support surface. For each process step and for each of the power applicators and the wafer support surface, the method includes determining an arc detection threshold lying above a noise level. The method further includes comparing each transient with the threshold determined for the corresponding power applicator or wafer support surface, and issuing an arc detect flag if the transient exceeds the threshold.

Abstract: It is an object of the present invention to provide a sputtering apparatus capable of suppressing local consumption of axial end portions of a rotatable cylindrical target to make uniform an erosion area in the cylindrical target and thereby improving the service life of the cylindrical target. The apparatus includes a pair of sputter evaporation sources 2 each having a rotatable cylindrical target 13 and a magnetic field generating member 14 disposed inside the cylindrical target 13; and a sputter power source 3 for the supply of discharge electric power to the cylindrical targets 13, using the cylindrical targets 13 as cathodes. Both the cylindrical targets 13 are disposed in such a manner that the respective center axes are parallel to each other, and the magnetic field generating members 14 generate a magnetic field having magnetic lines of force acting in directions attracting through surfaces of the cylindrical targets 13.

Abstract: A plasma reactor system for processing a wafer in which respective comparators are coupled to the respective RF transient sensors which are coupled in turn to respective RF power application points. The comparators have respective comparison thresholds. The system further includes a controller programmed to updating the respective thresholds of the comparators with respective updated thresholds for different ones of the steps of the process recipe.

Abstract: A method for processing a semiconductor wafer in a plasma reactor comprises sensing transient voltages or currents on a conductor coupled to the wafer and providing a first comparator for comparing the transient voltages or currents with a threshold level stored in the comparator. The method further includes transmitting from the comparator an arc flag signal whenever a transient voltage or current is sensed that exceeds the threshold level, and deactivating the power generator in response to the arc flag signal.

Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

Abstract: The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.

Abstract: A sputtering apparatus includes a rotatable rotary member to which a target is attached, connection terminals, and feeding terminals. The connection terminals are arranged on the end portion of the rotary member in a direction along the axis of rotation of the rotary member, and are electrically connected to the target. The feeding terminals supply electric power to the target via the connection terminals. When the rotary member is rotated while the feeding terminals are in contact with the end portion of the rotary member, the electrical connection or insulation state between the feeding terminals and connection terminals is switched.

Abstract: A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body.

Abstract: A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma.

Abstract: Wafer level arc detection is provided in a plasma reactor using an RF transient sensor sensing voltage at an electrostatic chucking electrode, the RF sensor being coupled to a threshold comparator, and a system controller responsive to the threshold comparator.

Abstract: Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.

Abstract: A power supply circuit for plasma generation by which a large quantity of generated plasma can be smoothly obtained without increasing the sizes of an apparatus. An electric discharge generating electrode is composed of two or more first electrodes and one or more second electrodes. An LC series circuit is provided by connecting a capacitor C and a coil L in series between one of outputs of an alternating high voltage generating circuit which generates an alternating high voltage to be applied between the electrodes of electric discharge generating electrode, and the first electrode. When electricity is discharged in one of the electrode pair, voltage drop is suppressed by the coil, and since electric discharge from the other electrode pair is induced without being disturbed, a large quantity of plasma can be smoothly generated by common use of the alternating high voltage generating circuit.

Abstract: In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus of this invention, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and a psubstrate to be processed is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

Abstract: In a PVD reactor having a sputter target at the ceiling, a conductive housing enclosing the rotating magnet assembly has a central port for the rotating magnet axle. A conductive hollow cylinder of the housing surrounds an external portion of the spindle. RF power is coupled to a radial RF connection rod extending radially from the hollow cylinder. DC power is coupled to another radial DC connection rod extending radially from the hollow cylinder.

Abstract: An electrostatic chuck (8) includes a dielectric board (14) having an upper surface on which a plurality of projections (17a) for supporting a substrate on top surfaces and recesses (17b) surrounding the projections (17a) are formed, an electrode (15) formed inside the dielectric board (14), and an external power supply (15) which applies a voltage to the electrode (15). The dielectric board (14) includes a conductor film (19) formed on at least the top surface of each projection (17a), and has a three-dimensional structure which causes the conductor film (19) to generate a Johnson-Rahbeck force between the substrate (9) and conductor film (19) when a voltage is applied to the electrode (15).

Abstract: The invention provides a microwave source to assist in sputtering deposition. Such a microwave source comprises a microstrip antenna that is attached to an end of a dielectric layer outside a sputtering target or cathode. The microstrip antenna comprising a dielectric coated metal strip radiates microwave between the sputtering cathode and a cathode dark space that is formed near the sputtering cathode. The microwave enhances plasma density in the cathode dark space. With the assistance of the microwave source, the sputtering target is able to operate at a lower pressure, a lower voltage and may yield higher deposition rates than without the microwave source. The target may have a generally circular or rectangular cross section. The microstrip may be of a curved strip such as a ring shape or a straight strip, depending upon the shape of the sputtering target.

Abstract: A magnetron sputtering source includes a plurality of electrodes and a switching circuit. The switching circuit sequentially connects each of the plurality of electrodes to a ground reference, making it anodic, while connecting the remaining of the plurality of electrodes as cathodes. A method of operating the magnetron sputtering source includes steps of: providing a plurality of target arrangements; causing each of the plurality of target arrangements to act as a cathode; and sequentially causing each of the plurality of cathodes to temporarily act as an anode.

Abstract: A vacuum treatment apparatus (10) for treating at least one substrate (12) and comprising a treatment chamber (14), at least one cathode (16), a power supply (18) associated with the cathode for generating ions of a material present in the gas phase in the chamber and/or ions of a material of which the cathode is formed, a substrate carrier (20) and a bias power supply for applying a negative bias to the substrate carrier and any substrate present thereon, whereby to attract said ions to said at least one substrate, said cathode power supply being adapted to apply relatively high power pulses of relatively short duration to said cathode at intervals resulting in lower average power levels comparable with DC operation, e.g. in the range from ca.

Abstract: An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm?1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between grains of 30 nm or shorter.

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract: Methods and apparatus for generating a strongly-ionized plasma are described. An apparatus for generating a strongly-ionized plasma according to the present invention includes an anode and a cathode that is positioned adjacent to the anode to form a gap there between. An ionization source generates a weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in the gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating the strongly-ionized plasma.

Abstract: A plasma processing apparatus includes a processing chamber; a lower center electrode mounting thereon a target substrate; a lower peripheral electrode; an upper electrode disposed above the lower center electrode; a gas supplying unit supplying a processing gas into the processing chamber; a first RF power supply outputting a first RF power for generating a plasma of the processing gas; a second RF power supply for outputting a second RF power for introducing ions into the substrate; and a central feed conductor connected to a rear surface of the lower center electrode. The apparatus further includes a circumferential feed conductor connected to a rear surface of the lower peripheral electrode to bypass and supply some of the first RF power to the lower peripheral electrode; and a movable feed conductor electrically connecting the central feed conductor and the circumferential feed conductor for the first RF power by capacitance coupling.

Abstract: In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

Abstract: By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented.

Abstract: A deposition system includes a process chamber, a workpiece holder for holding the workpiece within the process chamber, a first target comprising a first material, a second target comprising a second material, a single magnet assembly disposed that can scan across the first target and the second target to deposit the first material and the second material on the workpiece, and a transport mechanism that can cause relative movement between the magnet assembly and the first target or the second target.

Abstract: The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

Abstract: The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs. The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.

Abstract: A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Abstract: Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed.

Abstract: A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.

Abstract: A sputtering power-supply unit comprises a voltage generation section which generates a sputtering voltage between a negative electrode output terminal and a positive electrode output terminal, and a circuit section which reduces fluctuation in a sputtering current even if an arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal. Thus, fluctuation in the sputtering current can be reduced even if the arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal.

Abstract: A method and apparatus for sputter depositing a film on a substrate is disclosed. By providing a superimposed RF bias over a DC bias, plasma ionization is increased. In order to increase the resistive load across the substrate, an impedance circuit is provided between the substrate and the susceptor. The impedance circuit allows an insulating substrate to effectively function as an anode and connect to ground.

Abstract: The present invention relates to a method of forming a deposited film including a first step for setting a deposited film forming target (10) into a reaction chamber (4), a second step for filling the reaction chamber (10) with a reaction gas and a third step for applying pulse DC voltage between a first conductor (3) and a second conductor (40) spaced from each other in the reaction chamber (10). The present invention further relates to a deposited film forming device for performing the above method. Preferably, in the third step, potential difference between the first conductor (3) and the second conductor (40) is set to not less than 50V and not more than 3000V, and pulse frequency of the pulse DC voltage applied to the first and second conductors (3, 40) is set to not more than 300kHz. Duty ratio of the pulse DC voltage is set to not less than 20% and not more than 90%.

Abstract: The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.

Abstract: The invention relates to a vacuum plasma generator for providing a plasma discharge (10) for treating work pieces (5) by way of a pulsed plasma process in a vacuum chamber (2). Said vacuum plasma generator comprises a generator output (9, 9?) having an AC mains supply (6a), an AC/DC mains rectifier system (6) for rectifying the AC mains voltage to a DC voltage, a filter capacitor (6b), a first stage as clocked DC/DC voltage converter (7) with means for adjusting the DC output voltage which produces an intermediate circuit voltage (Uz), comprising a controlled power switch (7a) which feeds the primary winding of a transformer (14) and the secondary winding of which is connected to a rectifier (15) and a downstream intermediate capacitor (12) and configures a floating transformer secondary circuit (23). Said secondary circuit is connected to a downstream second stage which is a pulse output stage (8) and is connected to the generator output (9, 9?).

Abstract: A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.

Abstract: A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.

Abstract: A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.

Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.

Abstract: An arrangement for concurrently powering a plurality of sputtering sources. A power supply is coupled to a charge accumulator. The charge accumulator is coupled to several sputtering sources via switching devices. The duty cycle of each switching device is used to individually control the power delivered to each sputtering source. In another arrangement, a power source is coupled to an impedance match circuit. The impedance match circuit is coupled to several sputtering sources via several balance elements. Each balance element is operated to individually control the power delivered to the sputtering source.

Abstract: The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coating chamber along a coating line by a single person in a short time. Further, it is possible to separate the energy connection module from a coating chamber for maintenance or displacement purposes without mechanically demounting all connections.