Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: A substrate processing apparatus for performing a predetermined processing on a substrate includes a power supply device configured to supply a DC power. The power supply device includes a power supply and a current detection unit configured to detect a current value of a DC power from the power supply. The current detection unit includes a plurality of current sensors used for detecting the current value in the current detection unit and having different detection ranges for the current value, and a switching unit configured to switch the current sensors. The power supply is controlled such that the DC power from the power supply is maintained at a set value based on a detection result of the current detection unit, and the switching unit switches the current sensors depending on the set value of the DC power from the power supply.

Abstract: The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.

Abstract: A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil includes at least one terminal. An RF source configured to supply RF power to the coil. A dielectric window is arranged on one surface of the processing chamber adjacent to the coil. A contamination reducer includes a first plate that is arranged between the at least one terminal of the coil and the dielectric window.

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: The present disclosure relates to a sputtering arrangement, a vacuum coating system, and a method for carrying out HiPIMS coating methods; the sputtering arrangement has at least two different interconnection possibilities and the switch to the second interconnection possibility, in which two sputtering sub-assemblies are operated simultaneously with high power pulses, achieves a productivity gain.

Abstract: A method of maintaining a supply of power to a load comprising operating a power generator connected to a mains voltage in a rated operating mode, generating a power signal by the power generator, feeding the power signal to the load, monitoring the mains voltage or a variable derived therefrom for an occurrence of a first specified event, and operating the power generator in a first predefined operating mode based on the occurrence of the first specified event, wherein the first predefined operating mode differs from the rated operating mode.

Abstract: A device for use in a sputter system, comprising at least a first end block and a second end block positioned at opposite sides of the sputter system. The device is adapted such that a target assembly comprising at least one target tube or sputter magnetron, when mounted on the first and second end blocks, may be powered actively with RF power at both sides of the assembly, and such that the target assembly, when mounted, is not actively powered continuously with RF power simultaneously at both extremities of a target tube or sputter magnetron. An assembly comprising said device and a control unit for controlling powering of opposite sides of the target assembly by RF power such that the target assembly, when mounted, is not actively powered continuously with RF power simultaneously at both extremities of a target tube or sputter magnetron.

Abstract: Methods and apparatus for improved inductively coupled plasma sources are disclosed. A remote linear plasma source can have a plurality of coil segments operable to power intense localized radiofrequency plasma current channels along inner surfaces of a chamber. A plurality of localized intense plasma current channels within a single chamber provides a relatively large active plasma volume, improves efficiency, and provides for favorable residence time and feed gas distribution in a plasma source. In various embodiments, a remote plasma source operable to generate active species is useful for applications such as chamber cleaning, processing materials, ion, electron, and/or neutral beam sources, gaseous discharge lamps, fluorescent lighting, gaseous lasers, and others.

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

Abstract: During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.

Abstract: The present disclosure provides a technique capable of suppressing a deviation in a characteristic of a semiconductor device. There is provided a technique includes: (a) receiving data representing a thickness distribution of a polished silicon-containing layer on a substrate comprising a convex structure whereon the polished silicon-containing layer is formed; (b) calculating, based on the data, a process data for reducing a difference between a thickness of a portion of the polished silicon-containing layer formed at a center portion of the substrate and that of the polished silicon-containing layer formed at a peripheral portion of the substrate; (c) loading the substrate into a process chamber; (d) supplying a process gas to the substrate; and (e) compensating for the difference based on the process data by activating the process gas with a magnetic field having a predetermined strength on the substrate.

Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

Abstract: In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract: This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Abstract: This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Abstract: A mounting table structure includes a mounting table body, made of a conductive material, for mounting thereon the processing target object and serving as an electrode; a base table, made of a conductive material, disposed below the mounting table body with a gap therebetween in a state insulated from the mounting table body; a support column, connected to the ground side, for supporting the base table; a high frequency power supply line, connected to the mounting table body, for supplying a high frequency bias power to the mounting table body; and a power stabilization capacitor provided between the ground side and a hot side to which the high frequency bias power is applied. Here, an electrostatic capacitance of the power stabilization capacitor is set to be larger than an electrostatic capacitance of a stray capacitance between the mounting table body and the protective cover member.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary system includes an ion-energy control portion, and the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy setting that is indicative of a desired distribution of energies of ions bombarding a surface of a substrate. A controller is coupled to the switch-mode power supply, and the controller provides at least two drive-control signals. In addition, a switch-mode power supply is coupled to the substrate support, the ion-energy control portion and the controller. The switch-mode power supply includes switching components configured to apply power to the substrate responsive to the drive signals and the ion-energy control signal so as to effectuate the desired distribution of the energies of ions bombarding the surface of the substrate.

Abstract: One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

Abstract: This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Abstract: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

Abstract: A plasma ignition system includes a first voltage supply that selectively supplies a plasma ignition voltage and a plasma maintenance voltage across an adapter ring and a cathode target of a physical vapor deposition (PVD) system. A second voltage supply selectively supplies a second voltage across the adapter ring and an anode ring of the PVD system. A plasma ignition control module ignites plasma using the plasma ignition voltage and the auxiliary plasma ignition voltage and, after the plasma ignites, supplies the plasma maintenance voltage and ceases supplying the plasma ignition voltage and the auxiliary plasma ignition voltage.

Abstract: Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.

Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

Abstract: A film forming apparatus includes a stage provided in the processing chamber; three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage, each of the targets having a substantially rectangular shape; a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; and a rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line. A width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage.

Abstract: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

Abstract: The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film on an ?-Al2O3 substrate by a sputtering method. An epitaxial film forming method according to an embodiment of the present invention includes forming an epitaxial film of a group III nitride semiconductor thin film on an ?-Al2O3 substrate placed on a substrate holder (111) including a heater electrode (104) and a bias electrode (103) in a sputtering apparatus (1) by applying high-frequency power to a target electrode (102) and applying high-frequency bias power to the bias electrode (103) while the heater electrode (104) maintains the ?-Al2O3 substrate at a predetermined temperature. In this process, the high-frequency power and the high-frequency bias power are applied so that frequency interference therebetween may not occur.

Abstract: Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract: Apparatuses for deposition of one or more layers. In one aspect, an apparatus for deposition of one or more layers includes an anode; a cathode; a vacuum chamber including the anode and the cathode; a sensor configured to detect an electric potential between a section of the at least one anode and a section of the chamber. Furthermore, methods to monitor a device for deposition of one or more layers are also described.

Abstract: In a method in which two anodes are operated alternately opposite each other as plasma discharge anodes and as cathodes for self-cleaning, and the cathodes of the plasma discharge are recurrently briefly reversed in polarity, and an arrangement comprising a cathode and a first and a second anode supplied with voltage by an H-bridge circuit, pole reversal of cathode voltage is effected by a pulse current supply, at least one anode is maintained at positive potential at all times and the other anode intermittently at negative potential during an etching time, and the H-bridge circuit is operationally connected to the pulse current supply, such that at least one anode is at positive potential at all times.

Abstract: The current (Iout) flowing between a plasma chamber and a power supply is limited by limiting the current change di/dt if the current exceeds a predetermined current. A current change limiting device is provided in the current path between the power supply and the plasma chamber and is configured to determine if the current exceeds the predetermined current and limits the current change.

Abstract: In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.

Abstract: A device and method for coating an inside surface of a vessel is provided. In one embodiment, a coating device comprises a power supply and a diode in electrical communication with the power supply, wherein electrodes comprising the diode reside completely within the vessel. The method comprises reversibly sealing electrodes in a vessel, sputtering elemental metal or metal compound on the surface while maintaining the surface in a controlled atmosphere.

Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

Abstract: There is provided a sputter device in which a conductive target having a planar and circular shape is disposed so as to face a workpiece substrate mounted on a mounting part located within a vacuum chamber, includes: a direct current power supply configured to apply a negative direct current voltage to the target; an opposing electrode installed at the opposite side of the workpiece substrate from the target so as to face the target; and a target high-frequency power supply connected to the target and configured to supply high-frequency power to the target in order to generate a high-frequency electric field between the opposing electrode and the target, wherein the distance between the target and the workpiece substrate during a sputtering process being 30 mm or less.

Abstract: An arrangement is provided for feeding in HF current for rotatable tubular cathodes in a vacuum chamber of a plasma coating system as well as a high frequency current source. Located inside the tubular cathode is a magnet arrangement that extends along said tubular cathode for generating a magnetic field. The arrangement enables a low loss infeed of HF current, so that a particularly homogeneous sputter removal from the tubular cathode is guaranteed. The HF current source is coupled to the tubular cathode inside the vacuum chamber by a capacitive infeed of HF current in the form of a coupling capacitor. The coupling capacitor includes a part of the surface of the tubular cathode and a metal plate or metal film that surrounds the tubular cathode, at least partially, at a specified distance.

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract: A method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index are provided. The sputter-deposition system includes a plurality of target cathodes, each of which comprises a target material having a different composition, that are powered by a single DC power supply. The plurality of target cathodes are cosputtered to deposit a layer composed of a mixture of materials on a substrate. The composite refractive index of the layer is controlled by adjusting an operating parameter of the plurality of target cathodes. Suitable operating parameters include cathode power, cathode voltage, cathode current, an angle between a cathode support and the substrate, and a flow rate of a reactive gas.

Abstract: A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network, wherein the at least one output network includes at least one inductance that has at least one magnetic field strengthening element that is a Perminvar ferrite.

Abstract: A system and method for combinatorial processing of substrates in a processing chamber. The system includes a plurality of generators for supplying power into the processing chamber. A plurality of sputter guns provides power to different regions of a substrate. A switchbox switches power from a generator to a sputter gun via a plurality of coaxial switches. A controller positioned within the switchbox automatically distributes power from a specific generator to a specific sputter gun under programmable logic control.

Abstract: In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.

Abstract: A plasma chamber for depositing a battery component material on a partially fabricated battery cell comprising a battery component layer containing charge-carrying metal species and having an exposed surface. The chamber comprises a support carrier to hold a battery support comprising the partially fabricated battery cell. A mesh screen is positioned at a preset distance from the support carrier, the mesh screen having a plurality of mesh openings. An exhaust maintains a pressure of the process gas in the plasma chamber. A plasma power source is capable of applying an electrical power to the process gas to generate a plasma from the process gas for plasma deposition, during which the mesh screen is capable of reducing migration of the charge-carrying metal species across the battery component layer.

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

Abstract: Methods and apparatus for processing a substrate in a physical vapor deposition (PVD) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed on the outer surface of the shield body, and one or more magnets disposed within the cavity.