Abstract: A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.

Abstract: In a method for fabricating a magnetic tunnel junction, a first magnetic layer is formed on a substrate, and a tunnel insulating layer is formed on the first magnetic layer. Subsequently, a second magnetic layer is formed on the tunnel insulating layer. In the method, the first magnetic layer is formed by periodically sputtering a magnetic target while a metal target is continuously sputtered.

Abstract: A sputtering target of nonmagnetic-particle-dispersed ferromagnetic material is provided having a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 ?m and a long side of 50 to 300 ?m formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 ?m around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.

Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

Abstract: Provided is a CoCrPt-based alloy sputtering target containing cobalt (Co), chromium (Cr), platinum (Pt), cobalt oxide and non-magnetic oxide composition, wherein the lengths of ceramic phases of Cr2O3 and Co(Cr)—X—O formed in the sputtering targets are respectively less than 3 ?m (“X” represents the metal element of the non-magnetic oxide). The sputtering target is obtained via controlling suitable composition proportion of the prealloy powder with Cr and the sintering factor to decrease the size of ceramic phases of Cr2O3 and Co(Cr)—X—O. Sputtering targets made by the methods of the present invention decrease the arcing effects and unnecessary formation of particles upon sputtering in addition to making the components of the sputtering targets distribute more uniformly therein.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: A sputtering target of nonmagnetic-particle-dispersed ferromagnetic material is provided having a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 ?m and a long side of 50 to 300 ?m formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 ?m around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.

Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations <001>, <011>, <111>, <012> and <112> in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the <001>±15°, <011>±15° and <112>±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: This worked high-purity copper material includes Cu having a purity of 99.9999% by mass or more, wherein an average crystal grain size is in a range of 20 ?m or less, and in a grain size distribution of crystal grains, an area ratio of crystal grains having grain sizes that exceed 2.5 times the average crystal grain size is in a range of less than 10% of an area of the entire crystal grains. This method for producing a worked high-purity copper material includes: subjecting an ingot composed of high-purity copper having a Cu purity of 99.9999% by mass or more to hot forging at an initial temperature of 550° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to warm forging at an initial temperature of 350° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to cold cross-rolling at a total reduction ratio of 50% or more; and subsequently, subjecting the ingot to stress relief annealing at a temperature of 200° C. or higher.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A sputtering composite target includes: an oxide based component containing indium oxide; and a carbon based component.

Abstract: Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder. It is an object of the present invention to provide a sputtering target-backing plate assembly having a high average pass through flux and allowing more stable sputtering, by disposing the raw material powder for a target on the backing plate and sintering them. By simultaneously performing sintering and bonding, a sputtering target-backing plate assembly has a shorter manufacturing process, can shorten manufacturing period, and does not cause a problem of detachment due to an increase in temperature during sputtering.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).

Abstract: In one aspect of the invention, a sputter target is provided comprising a backing plate (40) comprising a front surface and a back surface; and a sputtering plate mounted on said backing plate, the sputtering plate comprising a sputtering surface and a back surface. At least one of the back surface of the sputtering plate, the front surface of the backing plate, or the back surface of the backing plate has at least one groove (30) that is shaped and sized to correspond to an observed region of higher sputtering of the sputtering plate relative to an adjacent area of the sputtering plate. An insert (50) is placed in the groove(s). The backing plate comprises a first material, the sputtering plate comprises a second material, and an insert comprises a third material. In yet another aspect of the sputter target, a method of controlling the electromagnetic properties of a sputter target is provided.

Abstract: Disclosed are a manufacturing method for a LiCoO2 sintered body, said manufacturing method enabling the safe manufacturing of a high density sintered body, and a sputtering target. The LiCoO2 sintered body manufacturing method includes a step in which LiCoO2 powder is filled into a mold. The pressure inside the mold is reduced, and the LiCoO2 powder is pressure sintered inside the mold at a temperature between 800° C. and 880° C. inclusive. The above method enables the safe production of a LiCoO2 sintered body having a relative density of at least 95% and an average particle diameter of 10 ?m-30 ?m inclusive.

Abstract: Provided is a method for stably manufacturing high-density sintered LiCoO2. Said method uses a CIP-and-sintering method, which has a forming step using cold hydrostatic pressing and a sintering step. The pressing force is at least 1000 kg/cm2, the sintering temperature is between 1050° C. and 1120° C., and the sintering time is at least two hours. This makes it possible to stably manufacture sintered LiCoO2 with a relative density of at least 90%, a resistivity of at most 3 k?·cm, and a mean grain diameter between 20 and 50 ?m.

Abstract: A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.

Abstract: A separated target apparatus and a sputtering method using the separated target apparatus. The separated target apparatus includes a plurality of separated targets that are adhered to a base plate and that form a regular array, wherein gaps between the plurality of separated targets are disposed within an angle between a first direction that is a direction of the regular array, and a second direction perpendicular to the first direction. When sputtering is performed by using the separated target apparatus having the aforementioned structure, it is possible to obtain an uniform deposition quality on a substrate by using the separated targets that are easily manufactured and handled, and thus it is possible to make brightness of a display apparatus be uniform on an entire screen.

Abstract: Disclosed is an Al alloy film for use in a display device, which does not undergo the formation of hillocks even when exposed to high temperatures of about 450° C. to 600° C., and has excellent high-temperature heat resistance, low electrical resistance (wiring resistance) and excellent corrosion resistance under alkaline environments. Specifically disclosed is an Al alloy film for use in a display device, which comprises at least one element selected from a group X consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf and Ti and at least one rare earth element, and which meets the following requirement (1) when heated at 450° C. to 600° C. (1) Precipitates each having an equivalent circle diameter of 20 nm or more are present at a density of 500,000 particles/mm2 or more in a first precipitation product containing at least one element selected from Al and the elements included in the group X and at least one rare earth element.

Abstract: One oxide film of the present invention is a film of an oxide (which can contain incidental impurities) containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and copper (Cu). The oxide film is an aggregate of microcrystals, an amorphous form including microcrystals or an amorphous form, which shows no clear diffraction peak in an XRD analysis and has p-type conductivity as shown in the chart of FIG. 5 showing the results of XRD (X-ray diffraction) analyses of a first oxide film and a second oxide film. According to this oxide film, p-type conductivity higher than that of a conventional oxide film is obtained. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals or an amorphous form, is consequently easily formed on a large substrate, and is therefore suitable also for industrial production.

Abstract: A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Abstract: An item, such as a sputtering target assembly or an electrostatic chuck, comprised of a first substrate; a metallization layer adhered to a surface of the first substrate; a second substrate; and an elastomer layer positioned between the metallization layer and the second substrate. In another embodiment, a debonding layer, such as a solder material, is positioned between the elastomer layer and the second substrate for allowing the item to be disassembled after use by heating the item up to the approximate melting point of the debonding layer.

Abstract: The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure.

Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 ?m width (e.g., less than about 50 ?m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

Abstract: Provided is an Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 ?m or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 ?m or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y/X is within the range of 0.1 to 0.5. The present invention aims to improve the structure of the Sb—Te-based alloy sputtering target, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing in the sputtering process.

Abstract: The invention describes a sputtering target comprising a ceramic body having tin oxide as a major constituent and between 0.5 and 15 wt % of at least two other oxides, one of which being antimony oxide, the target having a density of at least 90%, and preferably at least 95%, of the theoretical density (TD) and an electrical resistivity of less than 50 Ohm·cm, and the target having a planar or rotary configuration with a sputtering area of at least 10 cm2, and preferably at least 20 cm2. Also described is a process for manufacturing this sputtering target according comprising the steps of: —providing for a slurry comprising tin oxide and said at least two other oxides, —shaping of a green body from said slurry, and drying said green body, —firing of said green body at a temperature between 1050 and 1250° C., thereby obtaining a pre-shaped target, and —grinding of said pre-shaped target to its final dimensions.

Abstract: A sputtering target which is composed of a sintered body of an oxide containing indium, tin and zinc as main components; the atomic ratio of In/(In+Sn+Zn) being 0.10 to 0.35; the atomic ratio of Sn/(In+Sn+Zn) being 0.15 to 0.35; and the atomic ratio of Zn/(In+Sn+Zn) being 0.50 to 0.70; and containing a hexagonal layered compound shown by In2O3(ZnO)m, wherein m is an integer of 3 to 9, and a spinel structure compound shown by Zn2SnO4.

Abstract: The present invention provides a novel indium target and manufacturing method thereof, where an abnormal electrical discharge at sputtering and a generation of particles in a produced film can be inhibited excellently. The indium target contains not more than 1500 number/gram of inclusions having a particle size of 0.5 ?m to 20 ?m.

Abstract: A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results.

Abstract: In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.

Abstract: An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.

Abstract: The present invention relates to a sputtering target of a multi-component single body, a preparation method thereof, and a method for fabricating a multi-component alloy-based nanostructured thin film using the same. The sputtering target according to the present invention comprises an amorphous or partially crystallized glass-forming alloy system composed of a nitride forming metal element, which is capable of reacting with nitrogen to form a nitride, and a non-nitride forming element which has no or low solid solubility in the nitride forming metal element and does not react with nitrogen or has low reactivity with nitrogen, wherein the nitrogen forming metal element comprises at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Y, Mo, W, Al, and Si, and the non-nitride forming element comprises at least one element selected from Mg, Ca, Sc, Ni, Cu, Ag, In, Sn, La, Au, and Pb.

Abstract: An electrode material capable of making more satisfactory the dispersion at the time of production and the aging property of a resonator than Au and capable of reducing the price as compared to Au. An resonator electrode material including a ternary alloy composed of Au and two metals M1 and M2, and being used as an excitation electrode to excite oscillation in a piezoelectric element, wherein the two metals M1 and M2 are, respectively, (a) metal M1: a metal exhibiting a tendency to decrease the temporal frequency property (?f1/f1) from the reference value f1, and (b) metal M2: a metal exhibiting a tendency to increase the temporal frequency property (?f1/f1) from the reference value f1. The metal M1 is preferably at least any one of Ag, Al and Ni, and the metal M2 is preferably at least any one of Pd, Ru, Pt, Ir, Rh and Cu.

Abstract: A silver-based magnesium alloy thin film is provided for the semi-reflective coating layer of optical discs. This alloy has moderate to high reflectivity and reasonable corrosion resistance in the ambient environment.

Abstract: The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.

Abstract: Provided is a method of manufacturing high-purity hafnium by using a hafnium sponge with reduced zirconium as the raw material in which the impurity content of Fe, Cr, and Ni, the impurity content of Ca, Na, and K, the impurity content of Al, Co, Cu, Ti, W, and Zn, the alpha dose, the impurity content of U and Th, the impurity content of Pb and Bi, and the content of C as a gas component contained in the hafnium are reduced. Based on this efficient and stable manufacturing technology, additionally provided are a high-purity hafnium material obtained from the foregoing high-purity hafnium, as well as a sputtering target, a gate insulation film and a metal gate thin film, which are formed from this material. This high-purity hafnium has a purity 6N or higher except Zr and gas components, wherein Fe, Cr and Ni are respectively 0.2 ppm or less, Ca, Na and K are respectively 0.1 ppm or less, and Al, Co, Cu, Ti, W and Zn are respectively 0.1 ppm or less.

Abstract: The present invention provides a method for manufacturing a semiconductor memory element including a chalcogenide material layer and an electrode layer, each having an improved adhesion, and a sputtering apparatus thereof. One embodiment of the present invention is the method for manufacturing a semiconductor memory element including: a first step of forming the chalcogenide material layer (113); and a second step of forming a second electrode layer (114b) on the chalcogenide material layer (113) by sputtering through the use of a mixed gas of a reactive gas and an inert gas, while applying a cathode voltage to a target. In the second step, introduction of the reactive gas is carried out at a flow rate ratio included in a hysteresis area (40) appearing in the relationship between a cathode voltage applied to the cathode and the flow rate ratio of the reactive gas in the mixed gas.

Abstract: A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO2 and having an oxide which forms particles and is dispersed in an amount of 6 to 14 mol % (hereinafter referred to as the “oxide phase”), the sputtering target contains, in addition to components configuring the metal matrix phase and the oxide phase, a Cr oxide scattered in or on a surface of the oxide phase in an amount of 0.3 mol % or more and less than 1.0 mol %, and an average area of the respective particles contained in the oxide phase is 2.0 ?m2 or less. The provided sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase can reduce arcing, obtain a stable discharge in a magnetron sputtering device, and reduce the amount of particles that is generated during high density sputtering.

Abstract: A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.

Abstract: A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.

Abstract: Methods for manufacturing sputtering target assemblies and assemblies thereof are provided, particularly targets made of powders. Powders are adhered to a backing plate by use of a vacuum hot press, the powder preferably contacted by non-planar surfaces, and is compressed with at least about 95% density and substantially simultaneously diffusion-bonded to the backing plate.

Abstract: A sputtering target including an oxide sintered body including In, Zn and Ga, wherein a surface compound and an interior compound are essentially of the same crystal type(s).

Abstract: A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuK? radiation appear at 2?=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2?=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.

Abstract: A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO): 0.28?Zn/(In+Zn+Ga)?0.38 0.18?Ga/(In+Zn+Ga)?0.28.

Abstract: A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

Abstract: A ceramic material mainly contains magnesium, aluminum, oxygen, and nitrogen, in which the ceramic material has a magnesium-aluminum oxynitride phase serving as a main phase, wherein XRD peaks of the magnesium-aluminum oxynitride phase measured with CuK? radiation appear at at least 2?=47 to 50°.