Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

Abstract: The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.

Abstract: An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 ?m to 70 ?m prior to sputtering.

Abstract: A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.

Abstract: Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 ?m, an oxygen content of less than 50 wt.

Abstract: A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.

Abstract: In a transistor including an oxide semiconductor film, a metal oxide film for preventing electrification which is in contact with the oxide semiconductor film and covers a source electrode and a drain electrode is formed. Then, oxygen is introduced (added) to the oxide semiconductor film through the metal oxide film and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor film, so that the oxide semiconductor film is highly purified. Further, by providing the metal oxide film, generation of a parasitic channel on a back channel side of the oxide semiconductor film can be prevented in the transistor.

Abstract: Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.

Abstract: There is provided a hard film excellent in wear resistance. The hard film in accordance with the present invention includes (TiaCrbAlcLd) (BxCyNz) in terms of composition, in which the L is at least one of Si and Y, and the a, b, c, d, x, y, and z each denote the atomic ratio, and satisfy: 0.1?a<0.3; 0.3<b<0.6; 0.2?c<0.35; 0.01?d<0.1; a+b+c+d=1; x?0.1; y?0.1; 0.8?z?1; and x+y+z=1.

Abstract: The present invention provides a Cu2ZnSnSe4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.

Abstract: The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer.

Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Abstract: A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

Abstract: A heat resistant black coating film which is capable of making the surface of optical members to be low reflection property and black property, a black light shading plate having a resin film using the same as a base substrate, and a diaphragm, a diaphragm device for light intensity adjustment and a shutter using the same, and heat resistant light shading tape. They are provided by a black coating film (A), where a titanium oxide film containing titanium and oxygen as main components, and having an oxygen content of from 0.7 to 1.

Abstract: A sputtering target comprises a low Tg glass or an oxide of copper or tin. Such target materials can be used to form mechanically-stable thin films that exhibit a self-passivating phenomenon and which can be used to seal sensitive workpieces from exposure to air or moisture. Low Tg glass materials may include phosphate glasses such as tin phosphates and tin fluorophosphates, borate glasses, tellurite glasses and chalcogenide glasses, as well as combinations thereof.

Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Abstract: Provided is a sputtering target characterized by containing Ag and C. The sputtering target contains Ag in addition to Fe, Pt and C. By allowing the sputtering target to contain Ag, the sputtering target has high density. As a result, when the sputtering target is placed in a vacuum atmosphere in the sputtering process, the amount of a gas emitted from the sputtering target can be reduced, and the properties of a thin film formed by sputtering can be improved. Moreover, even when the sputtering target is produced by low-temperature sintering, it has high density.

Abstract: A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.

Abstract: A composite target material includes titanium oxide in a range between about 50 wt % and about 85 wt % and the remaining comprising stannic oxide or aluminum oxide or a combination of stannic oxide and aluminum oxide. A method for manufacturing composite target material includes the steps of: providing a mixture made of titanium oxide power in a range between about 40 wt % and about 80 wt %, stannic oxide powder or aluminum oxide in a range between about 15 wt % and about 50 wt %, binder in a range between about 5 wt % and about 10 wt %; pressing the mixture to form a blank; sintering the blank; cooling the blank.

Abstract: A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Abstract: A titanium diboride target contains fractions of one or more metals from the group including iron, nickel, cobalt and chromium as well as carbon. The mean grain size of TiB2 grains is between 1 ?m and 20 ?m, the carbon content is in a range of 0.1 to 5% by weight and the total content of Fe, Ni, Co and/or Cr is in a range of 500 to 3,000 ?g/g. The carbon is distributed in free form at the grain boundaries of the TiB2 grains in such a way that mean distances between individual carbon particles are less than 20 ?m. The porosity is less than 5% by volume.

Abstract: There is provided an Al-based alloy sputtering target, which can provide an enhanced deposition rate (or sputtering rate) when the sputtering target is used, and which can preferably prevent the occurrence of splashes. The Al-based alloy sputtering target of the present invention includes Ta and may preferably include an Al—Ta-based intermetallic compound containing Al and Ta, which compound has a mean particle diameter of from 0.005 ?m to 1.0 ?m and a mean interparticle distance of from 0.01 ?m to 10.0 ?m.

Abstract: A transparent conductive film for constructing a transparent electrode that is free from the generation of residue, etc. by etching with a weak acid (for example, organic acid). Further, there is provided a sputtering target for producing the transparent conductive film. In particular, there is provided a sputtering target composed of indium oxide and cerium oxide, characterized in that in the observation of crystal peaks by X-ray diffractometry, the presence of peaks ascribed to indium oxide and cerium oxide is observed, and that in the EPMA measurement, the diameter of cerium oxide particles dispersed in indium oxide is measured as being ?5 ?m. A transparent conductive film is formed by a sputtering technique with the use of this sputtering target. This transparent conductive film is substantially free from the generation of residue, etc. by etching with a weak acid (for example, organic acid).

Abstract: A method of coating a surface comprising providing a source of amorphous metal that contains manganese (1 to 3 atomic %), yttrium (0.1 to 10 atomic %), and silicon (0.3 to 3.1 atomic %) in the range of composition given in parentheses; and that contains the following elements in the specified range of composition given in parentheses: chromium (15 to 20 atomic %), molybdenum (2 to 15 atomic %), tungsten (1 to 3 atomic %), boron (5 to 16 atomic %), carbon (3 to 16 atomic %), and the balance iron; and applying said amorphous metal to the surface by a spray.

Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).

Abstract: A composite target and method for manufacturing the same are described, which manufactures the composite target according an etching condition of a waste target. The waste target is generated after an original target at least haying a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution. By determining the etching condition caused by the first magnetic field line distribution, a magnetic layer with a second magnetic field line distribution is decided to dispose on the original target. The metal layer is formed on the substrate layer and/or the magnetic layer. The substrate layer, the magnetic layer and the metal layer are combined by a connection layer to form the composite target. The composite target can provide the second magnetic field line distribution to adjust the first magnetic field line distribution.

Abstract: [Problem] To suppress the generation of particles by reducing the average particle diameter to several dozen ?m or less. [Solution] After forming a preform of a tungsten powder, the preform is sintered. The preform is formed so as to have a relative density of 70-90% (inclusive) and an oxygen content of 100-500 ppm (inclusive). The sintering is carried out by a hot isostatic pressing method at 1,700-1,850° C. (inclusive). Consequently, a tungsten target which has an average particle diameter of 20 ?m or less with a standard deviation of 10 ?m or less, a relative density of 99% or more and an oxygen content of 10 ppm or less can be obtained. This tungsten target is capable of significantly reducing the generation of particles during sputtering.

Abstract: There is provided a soft magnetic alloy for a perpendicular magnetic recording medium having a low coercive force, high amorphous properties, high corrosion resistance, and a high hardness; and a sputtering target for producing a thin film of the alloy. The alloy comprises in at. %: 6 to 20% in total of one or two of Zr and Hf; 1 to 20% of B; and 0 to 7% in total of one or two or more of Ti, V, Nb, Ta, Cr, Mo, W, Ni, Al, Si, and P; and the balance Co and/or Fe and unavoidable impurities. The alloy further satisfies 6?2×(Zr%+Hf%)?B%?16 and 0?Fe%/(Fe%+Co%)<0.20.

Abstract: Provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). Further provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt, 20 mol % or less of Cr, and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). The present invention provides a ferromagnetic material sputtering target that can improve the leakage magnetic flux to allow stable discharge with a magnetron sputtering device.

Abstract: A sintered compact sputtering target is provided and contains Co and Cr as metal components and includes oxides dispersed in the structure formed of the metal components. The structure of the sputtering target has a region (A) containing Co oxides dispersed in Co and a region (D) containing Cr oxides in a periphery of the region (A). In addition a method of producing the above referenced sintered compact sputtering target is provided and includes the steps of mixing a powder prepared by pulverizing a sintered compact containing Co oxide dispersed in Co, a Co powder, and a Cr power and pressure-sintering the resulting powder mixture to provide a sputtering target.

Abstract: There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 ?·cm or greater.

Abstract: A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe100-X—PtX)100-A—CA (provided A is a number which satisfies 20?A?50 and X is a number which satisfies 35?X?55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. An object of this invention is to enable the production of a magnetic thin film with granular structure without using an expensive simultaneous sputtering device, as well as provide a high-density sputtering target capable of reducing the amount of particles generated during sputtering.

Abstract: Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus.

Abstract: Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.

Abstract: A thermal diffusion control film which includes an Ag alloy containing Nd, Bi, and Si. The thermal diffusion control film can be used for a magnetic recording medium for heat-assisted magnetic recording. The thermal diffusion control film has a good heat resistance even after heat hysteresis at about 600° C.

Abstract: Provided is a sputtering target for a magnetic recording film containing SiO2, wherein the sputtering target for a magnetic recording film contains B (boron) in an amount of 10 to 1000 wtppm. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, and realizing a stable discharge with a magnetron sputtering device.

Abstract: A process for manufacturing indium tin oxide (ITO) sputtering targets is provided. The process includes: precipitating indium and tin hydroxides, calcining the hydroxides to produce granulated ITO powder, preparing an aqueous slurry of the ITO powder with additives such as special sintering aids, dispersing agent and binders, milling the slurry to obtain a slip, preparing compacted ITO green bodies by casting the slip using porous molds or drying the slip to yield granulated ITO powder and cold isostatic pressing the powder, and sintering the green body to yield ITO target of high density greater than 99% of theoretical.

Abstract: Provided is a ferromagnetic sputtering target having a metal composition comprising 20 mol % or less of Cr, 5 mol % or more of Pt, and the balance of Co, wherein the target includes a metal base (A) and two different phases (B) and (C) in the metal base (A), the phase (B) being a Co—Ru alloy phase containing 30 mol % or more of Ru, and the phase (C) being a metal or alloy phase primarily composed of Co or a Co alloy. The present invention improves the leakage magnetic flux to provide a ferromagnetic sputtering target that can perform stable discharge with a magnetron sputtering device.

Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a ?-Ga2O3-type structure, or GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract: A rotatable cylindrical magnetron sputtering device that includes a cathode body defining a magnet receiving chamber and a cylindrical target assembly surrounding the cathode body, wherein the cylindrical target assembly is rotatable around the cathode body. The cylindrical target assembly includes a hollow mandrel and a target portion mounted around and spaced away from the hollow mandrel portion so as to create a space gap between the hollow mandrel and the target portion, wherein the space gap may be greater than 0.002 inch and less than 0.020 inch.

Abstract: A thin film comprising titanium oxide as its main component, wherein the thin film includes titanium, oxygen and copper, content of Ti is 29.0 at % or higher and 34.0 at % or less and content of Cu is 0.003 at % or higher and 7.7 at % or less with remainder being oxygen and unavoidable impurities, and ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher.

Abstract: Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.

Abstract: Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.

Abstract: A sintered composite oxide 2 composed mainly of zinc, aluminum, titanium and oxygen, the atomic ratio of the elements satisfying the following equations (1) to (3), the sintered composite oxide 2 comprising particles having a hexagonal wurtzite structure containing zinc oxide as the major component and having a mean particle size of no greater than 20 ?m, and particles having a ZnTiO3-like structure and/or Zn2Ti3O8-like structure containing aluminum and titanium and having a mean particle size of no greater than 5 ?m, and containing no particles with a spinel oxide structure of zinc aluminate with zinc and aluminum in solid solution, and a manufacturing method for the same. (Al+Ti)/(Zn+Al+Ti)=0.004-0.055??(1) Al/(Zn+Al+Ti)=0.002-0.025??(2) Ti/(Zn+Al+Ti)=0.002-0.048??(3) [In the equations, Al, Ti and Zn represent the contents (atomic percents) of aluminum, titanium and zinc, respectively.

Abstract: An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Abstract: A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.

Abstract: Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO2, 0.05 to 0.60 mol % of Sn, with Co as a remainder thereof, wherein the Sn is contained in SiO2 particles (B) dispersed in a metal substrate (A). The method yields a ferromagnetic sputtering target containing dispersed nonmagnetic particles. The target can prevent the abnormal electrical discharge of oxides which causes the generation of particles during sputtering.

Abstract: A method of coating a surface comprising providing a source of amorphous metal that contains manganese (1 to 3 atomic %), yttrium (0.1 to 10 atomic %), and silicon (0.3 to 3.1 atomic %) in the range of composition given in parentheses; and that contains the following elements in the specified range of composition given in parentheses: chromium (15 to 20 atomic %), molybdenum (2 to 15 atomic %), tungsten (1 to 3 atomic %), boron (5 to 16 atomic %), carbon (3 to 16 atomic %), and the balance iron; and applying said amorphous metal to the surface by a spray.

Abstract: An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.