Planar Magnetron Patents (Class 204/298.19)
  • Patent number: 10332731
    Abstract: A magnet assembly for use in high power pulsed magnetron sputtering comprises a configuration of magnets having a magnetic field topology comprising magnetic field components Bx, By and Bz. A tangential magnetic field B// distribution on an x-y plane above the configuration of magnets comprising an outer continuous ring and one or more inner continuous rings contained in the outer continuous ring. A total magnetic field Btot distribution on an x-z plane intersecting the configuration of magnets comprises an outer closed loop and one or more inner closed loops contained in the outer closed loop, where, as a function of x, a tangential magnetic field B// alternates between (a) high field values greater than 200 G and high gradients in the z-direction of at least 1000 G/in, and (b) low field values of less than 50 G and low gradients in the z-direction of at most 250 G/in.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: June 25, 2019
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: David N. Ruzic, Ivan A. Shchelkanov, Priya Raman
  • Patent number: 9731323
    Abstract: The use of power-efficient transmitters to establish acoustic wave energy having low undesirable harmonics is achieved by adjusting the transmitter output waveform to minimize the undesirable harmonics. In one embodiment, both the timing and slope of the waveform edges are adjusted to produce the desired output waveform having little or no second harmonics. In the embodiment, output waveform timing adjustments on the order of fractions of the system clock interval are provided. This then allows for very fine control of a coarsely produced waveform. In one embodiment, the user can select the fine tuning to match the transmitter output signal to a particular load transducer.
    Type: Grant
    Filed: October 19, 2015
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM SonoSite, Inc.
    Inventors: John R. Stice, Yanwei Wang, Clinton T. Siedenburg, Andrew K. Lundberg, Justin Coughlin, Max Nielsen
  • Patent number: 9263241
    Abstract: This disclosure describes systems, methods, and apparatuses for extinguishing electrical arcs in a plasma processing chamber. Once an arc is detected, the steady state voltage provided to the plasma processing chamber can be reduced, and the current being provided to the chamber decays below a steady state value as the arc is extinguished. When the current falls to or below a current threshold, the voltage can be ramped back up bringing the voltage and current back to steady state values. This technique enables power to return to a steady state level faster than traditional arc mitigation techniques.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: February 16, 2016
    Assignee: Advanced Energy Industries, Inc.
    Inventors: Skip B. Larson, Kenneth E. Nauman
  • Patent number: 9117637
    Abstract: A method is provided for coating a substrate with the aid of a magnetron cathode and two electrodes which are alternately impinged upon by a positive potential and a negative potential. Also disclosed is an assembly for coating a substrate, comprising a vacuum chamber, a magnetron cathode, two electrodes, and a voltage source. A negative potential is generated at a level that is no greater than the level of the cathode potential, thus preventing the electrode that is to be cleaned from being stripped to a greater extent than the same was coated in the previous half-wave. The magnetron cathode and the electrodes are connected to the voltage source via switching elements without being galvanically such that a negative and a positive voltage generated from the voltage source can be alternatively applied to the electrodes, the level of said voltage being no greater than the cathode voltage.
    Type: Grant
    Filed: November 6, 2006
    Date of Patent: August 25, 2015
    Assignee: VON ARDENNE GmbH
    Inventors: Goetz Teschner, Falk Milde, Enno Mirring, Frank Meissner, Goetz Grosser
  • Patent number: 9058962
    Abstract: A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: June 16, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Tetsuya Endo, Einstein Noel Abarra
  • Patent number: 9034156
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Publication number: 20150107992
    Abstract: A sputtering apparatus comprises: a target holder; and a magnet unit of a rectangular shape having long and short sides. the magnet unit includes: a first magnet; a second magnet disposed surrounding the first magnet and magnetized in a different and opposite direction from a direction of magnetization of the first magnet, and a third magnet located at part between the first magnet and the second magnet in the short-side direction and at least at a center position between the first magnet and the second magnet, the third magnet being magnetized in the short-side direction. In the third magnet, a surface facing the second magnet has the same polarity as that of a surface of the second magnet on the target holder side, and a surface facing the first magnet has the same polarity as that of a surface of the first magnet on the target holder side.
    Type: Application
    Filed: December 22, 2014
    Publication date: April 23, 2015
    Inventor: Hidekazu SUZUKI
  • Patent number: 9005413
    Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: April 14, 2015
    Assignee: ULVAC, Inc.
    Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
  • Patent number: 8992749
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: March 31, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Patent number: 8968536
    Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
    Type: Grant
    Filed: June 18, 2007
    Date of Patent: March 3, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Adolph Miller Allen, Ki Hwan Yoon, Ted Guo, Hong S. Yang, Sang-Ho Yu
  • Patent number: 8961756
    Abstract: A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: February 24, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Makoto Inagawa, Hien Minh Huu Le, Akihiro Hosokawa, Bradley O. Stimson, John M. White
  • Patent number: 8956512
    Abstract: A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: February 17, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Shigeru Mizuno
  • Patent number: 8916034
    Abstract: A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: December 23, 2014
    Assignee: EMD Corporation
    Inventors: Yuichi Setsuhara, Akinori Ebe, Jeon Geon Han
  • Patent number: 8900419
    Abstract: In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: December 2, 2014
    Assignee: National Institute for Materials Science
    Inventors: Masayuki Kamei, Takamasa Ishigaki
  • Patent number: 8900427
    Abstract: A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: December 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Keith A. Miller, Michael Allen Flanigan, Hari Ponnekanti
  • Patent number: 8882976
    Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Min-Jae Jeong, Jong-Won Hong, Eu-Gene Kang, Heung-Yeol Na, Ki-Yong Lee
  • Patent number: 8871064
    Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: October 28, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tza-Jing Gung, Xinyu Fu, Arvind Sundarrajan, Edward P. Hammond, IV, Praburam Gopalraja, John C. Forster, Mark A. Perrin, Andrew S. Gillard
  • Patent number: 8845868
    Abstract: A seal and fixation assembly includes a cylindrical target having an inside surface with a shoulder that forms a stop within the target. A target retaining ring is disposed about the target. A seal plate is disposed within the target and engages the stop and the inside surface of the target. An end cap is disposed on the end of the target and includes a portion with a beveled surface within the target. A sealing element is disposed between the inside surface of the target, the seal plate, and the beveled surface of the end cap. A clamp is disposed over the end cap and the target retaining ring. Engagement of the end cap and the target retaining ring with the clamp causes the end cap to move within the target toward the stop to compress the sealing element between the target, the seal plate, and the beveled surface.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: September 30, 2014
    Assignee: Angstrom Sciences, Inc.
    Inventor: Richard Newcomb
  • Patent number: 8778150
    Abstract: To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 6 having a polarity different from that of the first magnet on the non-sputtering surface side.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: July 15, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Tetsuya Endo, Einstein Noel Abarra
  • Patent number: 8778144
    Abstract: Method for manufacturing magnetron coated substrates, in which along the target and on its backside pointing from the substrate, a magnet arrangement is present by which along the sputter surface of the target at least one closed loop of a tunnel shaped magnetron magnetic field is generated, characterized in that for setting the sputter rate distribution the distance of a part of the magnet arrangement to the backside of the target is changed.
    Type: Grant
    Filed: September 28, 2004
    Date of Patent: July 15, 2014
    Assignee: Oerlikon Advanced Technologies AG
    Inventor: Jurgen Weichart
  • Patent number: 8778151
    Abstract: A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.
    Type: Grant
    Filed: June 14, 2010
    Date of Patent: July 15, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Masayoshi Ikeda, Yo Tanaka, Tsutomu Hiroishi
  • Patent number: 8721847
    Abstract: A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: May 13, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Yu Chang, William Kuang, Ronald D. DeDore, Jitendra R. Bhimjiyani, Wesley W. Zhang
  • Patent number: 8715471
    Abstract: To be able to realize a relatively wide magnetron sputter cathode, it is proposed that on the vacuum side of a carrier (2) is disposed the sputter target (4) with a backing plate (3), which maintains a gap (14) from the carrier (2). The backing plate (3) is developed as a cooling plate. In it are located cooling means channels (15), which, via an inlet (16) through the carrier (2), are supplied with cooling fluid, which can flow out again via an outlet (17) through the carrier (2). On the atmospheric side is located a magnet configuration (5).
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: May 6, 2014
    Assignee: Applied Materials GmbH & Co KG
    Inventors: Jörg Krempel-Hesse, Andreas Jischke, Uwe Schüssler, Hans Wolf
  • Patent number: 8709218
    Abstract: A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: April 29, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Hajime Yamamoto, Hiroyuki Imai
  • Patent number: 8679306
    Abstract: A sputtering apparatus with high usage efficiency of a target is provided. A sputtering apparatus of the present invention includes first and second ring magnets, first and second magnet members arranged inside a ring of the first and second ring magnets, wherein in the first and second ring magnets and the first and second magnet members, magnetic poles with the same magnetism are faced toward the rear surface of a first and a second targets. Thus, in the rear surface of the first and second targets, the magnetic poles with the same polarity are adjacently arranged, and the absolute value of the strength of horizontal magnetic field components formed in the surfaces of the first and second targets becomes small and the strength distribution becomes narrow, and the strength of vertical magnetic field components becomes uniform; and consequently, a non-erosion portion is not produced in the first and second targets.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: March 25, 2014
    Assignee: Ulvac, Inc.
    Inventors: Satoru Takasawa, Sadayuki Ukishima, Noriaki Tani, Satoru Ishibashi
  • Patent number: 8673124
    Abstract: The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: March 18, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Tetsuya Endo, Einstein Noel Abarra
  • Patent number: 8663430
    Abstract: In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: March 4, 2014
    Assignee: Canon Anelva Corporation
    Inventor: Seishi Horiguchi
  • Patent number: 8608918
    Abstract: A magnet structure and the like are provided, which can reduce the labor required to make a magnet design for producing a tunnel-shaped leakage magnetic field for plasma confinement in a well-balanced manner over an obverse surface of a target, based on a quadridirectional magnetic field produced by magnetic interaction between plural magnets.
    Type: Grant
    Filed: August 23, 2006
    Date of Patent: December 17, 2013
    Assignee: Shinmaywa Industries, Ltd.
    Inventors: Takanobu Hori, Yasukuni Iwasaki, Nobuo Yoneyama, Keisuke Kondo
  • Patent number: 8585872
    Abstract: A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: November 19, 2013
    Assignee: ULVAC, Inc.
    Inventors: Satoru Takasawa, Sadayuki Ukishima, Noriaki Tani, Satoru Ishibashi
  • Patent number: 8580094
    Abstract: Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: November 12, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Rongjun Wang, Sally Lou, Muhammad Rasheed, Jianxin Lei, Xianmin Tang, Srinivas Gandikota, Ryan Hanson, Tza-Jing Gung, Keith A. Miller, Thanh X. Nguyen
  • Patent number: 8574412
    Abstract: A magnetron sputtering device includes a main body and a magnet mounting system for receiving magnets. The magnet mounting system comprises a first annular member, a second annular member coaxially encasing the first member, a third annular member coaxially encasing the second member, a first driving device connected to the first annular member, a second driving device connected to the second annular member, and a third driving device connected to the third annular member. The first driving device, the second driving device, and the third driving device are respectively configured for driving the first annular member, the second annular member, and the third annular member to move along an axis of the first annular member.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: November 5, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Shao-Kai Pei
  • Patent number: 8574410
    Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: November 5, 2013
    Assignee: The Regents of the University of California
    Inventor: Andre Anders
  • Patent number: 8562798
    Abstract: A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
    Type: Grant
    Filed: September 7, 2005
    Date of Patent: October 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John Pipitone, Vineet Mehta
  • Patent number: 8557094
    Abstract: A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: October 15, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Xianmin Tang, Hua Chung, Rongjun Wang, Tza-Jing Gung, Praburam Gopalraja, Jick Yu, Hong Yang
  • Patent number: 8535494
    Abstract: Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: September 17, 2013
    Assignees: National University Corporation Tohoku University, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Patent number: 8512530
    Abstract: A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: August 20, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Heung-Yeol Na, Jong-Won Hong, Seok-Rak Chang, Ki-Yong Lee
  • Patent number: 8512526
    Abstract: A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.
    Type: Grant
    Filed: September 7, 2005
    Date of Patent: August 20, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John Pipitone, Vineet Mehta
  • Patent number: 8500975
    Abstract: A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: August 6, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Hien Minh Huu Le, Akihiro Hosokawa, Avi Tepman
  • Patent number: 8500962
    Abstract: A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: August 6, 2013
    Assignee: Ascentool Inc
    Inventors: George X. Guo, Kai-an Wang
  • Patent number: 8496792
    Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: July 30, 2013
    Assignees: National University Corporation Tohoku University, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Patent number: 8480865
    Abstract: The present invention relates to a magnetron sputtering device including a large ring cathode having a defined inner radius. The position of the ring cathode is offset in relation to a center point of a planetary drive system. An anode or reactive gas source may be located within the inner radius of the ring cathode. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.
    Type: Grant
    Filed: April 14, 2011
    Date of Patent: July 9, 2013
    Assignee: JDS Uniphase Corporation
    Inventor: Georg J. Ockenfuss
  • Patent number: 8470145
    Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.
    Type: Grant
    Filed: June 23, 2009
    Date of Patent: June 25, 2013
    Assignee: Ulvac, Inc.
    Inventors: Naoki Morimoto, Tomoyasu Kondo, Daisuke Mori, Kyuzo Nakamura
  • Patent number: 8454804
    Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.
    Type: Grant
    Filed: October 28, 2005
    Date of Patent: June 4, 2013
    Assignee: Applied Materials Inc.
    Inventors: Mengqi Ye, Zhendong Liu, Peijun Ding
  • Patent number: 8440301
    Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: May 14, 2013
    Assignee: Teer Coatings Limited
    Inventors: Dennis Teer, Alex Goruppa
  • Patent number: 8398834
    Abstract: Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: March 19, 2013
    Assignee: Nuvosun, Inc.
    Inventor: Dennis R. Hollars
  • Patent number: 8388819
    Abstract: A magnet target comprising a fixing plate, a plurality of shafts arranged in an array, a plurality of connecting rods pivotably provided onto a plate surface of the fixing plate at one end and capable of rotating about corresponding one of the shafts, and a plurality of magnets that are each attached to the other fee end of one connecting rod. The magnets comprise magnets having external S poles and magnets having external N poles, and the magnets having external S poles and magnets having external N poles are arranged alternatively in an array.
    Type: Grant
    Filed: February 10, 2010
    Date of Patent: March 5, 2013
    Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
    Inventors: Xin Zhao, Wenyu Zhang
  • Patent number: 8377269
    Abstract: There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: February 19, 2013
    Assignee: Ulvac, Inc.
    Inventors: Naoki Morimoto, Tomoyasu Kondo, Hideto Nagashima, Daisuke Mori, Akifumi Sano
  • Patent number: 8343318
    Abstract: A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: January 1, 2013
    Assignee: Novellus Systems Inc.
    Inventors: Karl Leeser, Ishtak Karim, Alexander Dulkin
  • Publication number: 20120313504
    Abstract: A film-forming device includes: a shield part placed so as to surround the sides of the target; a rod-shaped magnetic field generation unit for generating a magnetic field, the magnetic field generation unit being placed toward the back surface of the target; and a drive unit for reciprocatingly driving the magnetic field generation unit in a linear manner along a drive direction, which is a direction perpendicular to the length direction of the magnetic field generation unit, in a horizontal plane, which is a plane perpendicular to the front/back direction of the target. When the magnetic field generation unit is located at the end of the range within which it is driven by the drive unit, the distance in the drive direction between the magnetic field generation unit and the projection when the shield part is projected perpendicularly to the horizontal plane is 10 mm or more.
    Type: Application
    Filed: March 14, 2012
    Publication date: December 13, 2012
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Hiroshi SASAKI, Takanori Sonoda
  • Patent number: 8273221
    Abstract: An apparatus and method are provided for improved utilization of a sputter target in the longitudinal end regions. The focus of erosion in the end regions is widened, thereby extending the useful life of the target. This provides improved efficiency and reduces waste because a greater proportion of the target material in the more expansive central region can be harvested, because the target is utilized for a longer period of time.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: September 25, 2012
    Assignee: Oerlikon Solar AG, Trubbach
    Inventors: Stefan Schneider, Marcel Muller, Jiri Vyskocil, Israel Wagner