Abstract: A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may slant at an angle of between 10° and 55°, preferably 15° and 45°, with respect to the target normal. The facing sides of tiles may be roughened by bead blasting, for both perpendicular and sloping gaps. The area of the backing plate underlying the gap may be roughened or may coated or overlain with a region of the material of the target, for both perpendicular and sloping gaps.

Abstract: A magnetron comprises an anode, a cathode disposed at a center of the anode, a plurality of vanes radially protruding from an inner surface of the anode towards the cathode, and an upper end shield and a lower end shield respectively coupled to an upper end and a lower end of the cathode so that a length of an effective heating portion of the cathode may be less than a height of the vane.

Abstract: A magnetron sputtering electrode for use with a magnetron sputtering device, wherein the magnetron sputtering electrode comprises a cathode body, a drive unit coupled to the cathode body, a target received by the cathode body, and a closed loop magnet arrangement received within a magnet receiving chamber and coupled to the drive unit. The closed loop magnet arrangement is comprised of a plurality of magnets adapted for motion relative to the target by the drive unit, wherein at least one of the plurality of magnets is a profiled magnet having a contoured top portion. A method of improving target utilization in sputtering applications is also disclosed.

Abstract: A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.

Abstract: The magnet arrangement and resulting rotating sputtering magnetron design of an embodiment provides magnetic flux density and distribution to penetrate thick production ferrous targets. Further, the magnetic field shape improves target life by more uniformly removing target material.

Abstract: In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. The open plasma loop may be formed and swirled using a rotating magnetic array to average the target erosion.

Abstract: An asymmetric alternating voltage (preferably 40 KHz) is provided between a pair of targets having a coaxial (preferably frusto-conical) relationship to (1) deposit the material in a uniform thickness on the substrate surface (2) eliminate dielectric material from the surfaces of the targets and other components (3) provide a single ignition of the targets and eliminate target ignitions thereafter and (4) reduce the substrate temperature by using low energy (“cold”) electrons from a plasma discharge to produce a low energy current. The asymmetry may result from amplitude differences between the voltage in alternate half cycles and the voltage in the other half cycles. A second alternating voltage (preferably radio frequency) modulates the asymmetric alternating voltage to provide the smooth plasma ignition.

Abstract: The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a power source which supplies positive and negative charge, and a gas distribution system. The gas distribution system may comprise a simple perforated gas delivery member, or it may comprise a perforated gas delivery member with an attached conductive anodic surface. The gas delivery member may also contain an inner conduit with further perforations which serves to baffle flow of the sputtering gas. Gas flow may be regulated within discrete portions of the gas distribution system. The anodic surfaces of the gas distribution system are cleaned through the action of plasma and gas flow, creating a more stable plasma and reducing the need for maintenance.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the sputtering target. A power supply produces an electric field in a gap between the anode and the cathode assembly. The electric field generates excited atoms in the weakly ionized plasma and generates secondary electrons from the sputtering target. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma having ions that impact a surface of the sputtering target to generate sputtering flux.

Abstract: A magnetron includes semi-circularly shaped electric field adjusting grooves provided on surfaces of outer ends of vanes brought into contact with an inner surface of a positive polar body to make distribution of an electric field uniform on the surfaces of the outer ends of the vanes. Accordingly, the electric field becomes uniform by the electric field adjusting grooves provided on the surfaces of the outer ends of the vanes, so that generation of undesirable harmonics is suppressed.

Abstract: Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer.

Abstract: A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is allocated above the cathode 4 so as to face the substrate 5 toward the target 3 on the cathode 4, a permanent magnet 71 that generates magnetic field 141 and is allocated under the cathode 4, and a rotation controller 12 for rotating the permanent magnet 71 so as to pivot on a center axis of the target 3.

Abstract: A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water channel between a top plate of the cathode body and a cooling channel plate of the magnet module. An elongated target is releasably connected atop and coextensive with the top plate and secured in place by a unique threaded fastener engagement between a target clamp and an edge portion of the cathode body whereby the target is replaceable without disassembly of the cathode body. Unique replaceable elongated fastener receiving inserts releasably secure said target against the target plate to effect target replacement without disassembly of the cathode body.

Abstract: In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cm2 of substrate surface area.

Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

Abstract: Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

Abstract: A sputtering system for depositing a thin film on a substrate includes a vacuum chamber, a support for supporting the substrate in the vacuum chamber, a target arranged to oppose the support, a fixed plate formed on a first side of the target, and a plurality of electromagnets formed on the fixed plate in a cell pattern.

Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fi

Abstract: An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract: A method of depositing lithium phosphorus oxynitride on a substrate, the method comprising loading a substrate into a vacuum chamber having a target comprising lithium phosphate, introducing a process gas comprising nitrogen into the chamber and maintaining the gas at a pressure of less than about 15 mTorr; and forming a plasma of the process gas in the chamber to deposit lithium phosphorous oxynitride on the substrate.

Abstract: A cathode for a cluster tool in accordance with the present invention includes a base, a disc-shaped target mounted to the base and a magnetic source for establishing magnetic flux lines through the target. The target further comprises a top plate with a plurality of through holes; and a bottom plate with a plurality of bottom plate openings which interconnect distribution grooves formed in one surface with base face channels formed in the other surface. When the top plate is mated to the bottom plate, a path of fluid communication is established from the base face channels to the through holes to allow for inert gas to pass through the target. During operation, the through holes act as micro-cathodes to more efficiently cause material to be sputtered from the target. Each through hole defines a through hole axis, and the magnetic flux lines are parallel with the through holes axes.

Abstract: According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.

Abstract: A method for controlling plasma density distribution over a target of a magnetron sputter source has at least one electron trap generated with a magnetic field over the target. The field forms a closed circulating loop and, viewed in cross section, has a tunnel shape. Due to the loop of the tunnel-shaped magnetic field as well as of an electric field that is at an angle to it and which is generated between an anode and the target acting as the cathode, an electron current is formed, which forms along and in the loop current loop. In a region along the loop of the magnetic field, the field conditions are locally varied under control. With changes of field conditions, the component of the loop electron current is varied which is anodically coupled out of the loop.

Abstract: A thin-film solar cell including a transparent electrode layer, a semiconductor photovoltaic conversion layer, a rear transparent electrode layer and a rear reflective metal layer, said layers being formed in this order on a transparent substrate, wherein the rear transparent electrode has a two-layer structure of an ITO or ZnO:Ga layer and a ZnO:Al layer formed in this order on the semiconductor photovoltaic conversion layer.

Abstract: A sputtering magnetron arrangement is disclosed, comprising a magnetic field generator (1) and a target (4) which is associated with said magnetic field generator (1). The magnetic field generator (1) includes a magnetically active element (5-9) and an adjusting means (20-25) which is adapted to deform or deflect locally the magnetically active element (5-9) so as to alter with respect to the target (4) the position of at least a portion of the magnetic field generator (1).

Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Abstract: An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction substantially perpendicular to the first direction. The magnet structure may be formed from permanent magnets extending radially in a horizontal direction, like the spokes of a wheel, and from magnetizable pole pieces extending vertically from the opposite ends of the spokes. The permanent magnets and the pole pieces define a well. The target is disposed in the well so that its flat disposition is in the same direction as the magnetic flux lines. Molecules of an inert gas flow through the well. Electrons in the well move in a third direction substantially perpendicular to the first and second directions. The electrons ionize molecules of the inert gas. The ions are attracted to the target and sputter atoms from the surface of the target. The sputtered atoms become deposited on a substrate.

Abstract: A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is allocated above the cathode 4 so as to face the substrate 5 toward the target 3 on the cathode 4, a permanent magnet 71 that generates magnetic field 141 and is allocated under the cathode 4, and a rotation controller 12 for rotating the permanent magnet 71 so as to pivot on a center axis of the target 3.

Abstract: A magnetron with mechanisms for controlling the magnetic field that acts on its targets in such a manner as to provide control over erosion patterns and independent control of stress, uniformity, deposition rate, and coupling coefficient of a deposited film. A magnetron according to the present teachings includes a set of targets each for eroding a material for deposition onto a wafer contained in the magnetron and a mechanism for adjusting a racetrack position on each target. The racetrack position defines the areas of the targets from which a predominant amount of the material is eroded. The control of racetrack position enables precise control of erosion characteristics and control over stress, uniformity, deposition rate, and coupling coefficient.

Abstract: A sputtering conductor target is provided, which includes: a center portion; an edge portion around the center portion and having a thickness larger than the center portion; and an inclined portion disposed between the center portion and the edge portion and making an angle of about 30°-70° with a normal to a top surface of the edge portion.

Abstract: An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current source. The unbalanced magnetrons, which may be planar, cylindrical, or conical, are arranged in mirror configuration such that like poles are opposed across the substrate space or are adjacent on the same side of the substrate space. The magnetrons are all identical in magnetic polarity, such that there is no magnetic coupling between either opposed or adjacent magnetrons. A positive plasma potential produced by the AC driver prevents electrons from escaping to ground along the unclosed field lines, increasing plasma density in the background working gas and thereby improving the quality of coating being deposited on the substrate.

Abstract: A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.

Abstract: A magnetic field generator for confining plasma within a vacuum chamber is disclosed. The magnetic field generator produces a multi-pole magnetic field around a workpiece positioned within the vacuum chamber. The magnetic field generator is provided outside the vacuum chamber and comprises a plurality of segment type permanent magnets circularly arranged. The magnetic field generator further comprises a plurality of magnetic members to which the segment type permanent magnets are selectively attached.

Abstract: A cathode arc source has means for generating first and second magnetic fields, of opposite or reverse direction to each other. The resultant magnetic field includes a null point between the target and the substrate, though close to the target. Field strength normal to the target is zero at the null point, and field strength lateral to the target is strong at the target surface, constraining movement of the arc spot and reducing the risk of migration off the target surface. A target is made by pressing graphite powder at elevated temperature and pressure in the absence of binding material. Both source and target contribute to reduced macroparticles in deposited films.

Abstract: A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of the source through apertures provided in the cathode itself. A torus-shaped magnetic field generated in the torus-shaped plasma facilitates plasma generation, sputtering of the cathode and ionization of the sputtered material by the plasma.

Abstract: A magnetron sputtering electrode for use with a magnetron sputtering device, wherein the magnetron sputtering electrode comprises a cathode body, a drive unit coupled to the cathode body, a target received by the cathode body, and a closed loop magnet arrangement received within a magnet receiving chamber and coupled to the drive unit. The closed loop magnet arrangement is comprised of a plurality of magnets adapted for motion relative to the target by the drive unit, wherein at least one of the plurality of magnets is a profiled magnet having a contoured top portion. A method of improving target utilization in sputtering applications is also disclosed.

Abstract: The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a power source which supplies positive and negative charge, and a gas distribution system. The gas distribution system may comprise a simple perforated gas delivery member, or it may comprise a perforated gas delivery member with an attached conductive anodic surface. The gas delivery member may also contain an inner conduit with further perforations which serves to baffle flow of the sputtering gas. Gas flow may be regulated within discrete portions of the gas distribution system. The anodic surfaces of the gas distribution system are cleaned through the action of plasma and gas flow, creating a more stable plasma and reducing the need for maintenance.

Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.

Abstract: An object of the present invention is to alter the shape of the magnetic field with ease in the state of auxiliary magnet poles being disposed in a sputtering apparatus. In a sputtering apparatus according to the present invention, one or more magnetron type sputtering evaporation sources 3 and one or more auxiliary magnet poles 9 are disposed in a chamber 1 so as to surround a solid substance 2 to be deposited, wherein an angle changing mechanism for changing the alignment angle of the auxiliary magnet poles 9 relative to the solid substance 2 to be deposited in order to alter the shape of the magnetic field formed by the magnetron type sputtering evaporation sources 3 and the auxiliary magnet poles 9.

Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.

Abstract: The present invention discloses a novel rectangular sputtering magnetron cathode that significantly improves target utilization and sputtering efficiency. Different from conventional magnatron design that considers only magnetic field distribution and is, therefore, qualitive or empirical, the present magnetron cathode is developed through computer-aided simulation of plasma discharge. The magnetic and electric fields are optimized in a combined manner by quantitatively simulating electron trajectories, electron/Ar collisions, space charge distribution, and target erosion profile. Sputtering tests with Cu target show a target utilization of 55%˜65%, much higher than conventional target utilization which is about 40%. Meanwhile, high sputtering efficiency is achieved by maintaining a relatively strong magnetic field over the surface of the target, which can be thicker than 12 mm, as a result of effective confinement of high-energy electrons.

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

Abstract: A magnetron sputtering apparatus and a magnetron sputtering method using the same, wherein a vacuum chamber has a discharge gas inlet and a discharge gas outlet, a substrate holder is installed inside the vacuum chamber, a magnetic circuit unit, which includes a target electrode installed opposite to the substrate and a magnetron fixed on a rear surface of the target electrode, faces the substrate holder and circulates around the central axis of the substrate holder, and a driving unit circulates the magnetic circuit unit and adjusts a distance between the target electrode and the center of the substrate holder. Accordingly, in the magnetron sputtering apparatus of the present invention, the uniformity of a thin film and the step coverage is improved.

Abstract: An array of unbalanced magnetrons arranged around a centrally-located space for sputter coating of material from target electrodes in the magnetrons onto a substrate disposed in the space. The electrodes are powered in pairs by an alternating voltage and current source. The unbalances magnetrons, which may be planar, cylindrical, or conical, are arranged in mirror configuration such that like poles are opposed across the substrate space or are adjacent on the same side of the substrate space. The magnetrons are all identical in magnetic polarity. A positive plasma potential produced by the AC driver prevents electrons from escaping to ground along the unclosed field lines, increasing plasma density in the background working gas and thereby improving the quality of coating being deposited on the substrate.

Abstract: The present invention discloses a novel rectangular sputtering magnetron cathode that significantly improves target utilization and sputtering efficiency. Different from conventional magnetron design that considers only magnetic field distribution and is, therefore, qualitative or empirical, the present magnetron cathode is developed through computer-aided simulation of plasma discharge. The magnetic and electric fields are optimized in a combined manner by quantitatively simulating electron trajectories, electron/Ar collisions, space charge distribution, and target erosion profile. Sputtering tests with Cu target show a target utilization of 55%˜65%, much higher than conventional target utilization which is about 40%. Meanwhile, high sputtering efficiency is achieved by maintaining a relatively strong magnetic field over the surface of the target, which can be thicker than 12 mm, as a result of effective confinement of high-energy electrons.

Abstract: A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annulus of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the sputtering target. A power supply produces an electric field in a gap between the anode and the cathode assembly. The electric field generates excited atoms in the weakly ionized plasma and generates secondary electrons from the sputtering target. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma having ions that impact a surface of the sputtering target to generate sputtering flux.