Magnetically Enhanced Patents (Class 204/298.16)
  • Patent number: 12094710
    Abstract: The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: September 17, 2024
    Assignees: TOKYO ELECTRON LIMITED, OSAKA UNIVERSITY
    Inventors: Nobuaki Takahashi, Hitoshi Miura, Koji Neishi, Ryuji Katayama, Yusuke Mori, Masayuki Imanishi
  • Patent number: 11984302
    Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: May 14, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Job George Konnoth Joseph, Sathya Swaroop Ganta, Kallol Bera, Andrew Nguyen, Jay D. Pinson, II, Akshay Dhanakshirur, Kaushik Comandoor Alayavalli, Canfeng Lai, Ren-Guan Duan, Jennifer Y. Sun, Anil Kumar Kalal, Abhishek Pandey
  • Patent number: 11901166
    Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: February 13, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Tetsuya Miyashita, Kanto Nakamura, Yusuke Kikuchi
  • Patent number: 11488814
    Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
  • Patent number: 11406765
    Abstract: A method and apparatus for plasma modifying a workpiece such as a syringe barrel, cartridge barrel, vial, or blood tube is described. Plasma is provided within the lumen of the workpiece. The plasma is provided under conditions effective for plasma modification of a surface of the workpiece. A magnetic field is provided in at least a portion of the lumen. The magnetic field has an orientation and field strength effective to improve the uniformity of plasma modification of the interior surface of the generally cylindrical wall. A vessel made according to the process or using the apparatus described above. A pharmaceutical package comprising the syringe barrel or vial containing a pharmaceutical preparation, secured with a closure.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: August 9, 2022
    Assignee: SIO2 Medical Products, Inc.
    Inventors: Christopher Weikart, Becky L. Clark, Adam Stevenson, Robert S. Abrams, John Belfance
  • Patent number: 10984989
    Abstract: A charge neutralizer that includes a vacuum chamber which is capable of having a charged object installed therein and includes a high vacuum processing unit that performs vapor deposition, and a plasma generator configured to supply plasma caused by an electron cyclotron resonance to an inside of the vacuum chamber. The plasma generator includes a plasma source configured to generate the plasma, and a flange configured to install the plasma source inside the vacuum chamber.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: April 20, 2021
    Inventors: Nobuo Nomura, Tomofumi Mogami, Kazuki Minemura, Daiki Koda, Takato Morishita, Satoshi Hosoda, Hitoshi Kuninaka
  • Patent number: 10866192
    Abstract: An optochemical sensor unit including: an optical waveguide; a transmitting unit for emitting a first transmission signal for exciting a luminophore; a receiving unit for receiving a received signal comprising a signal component emitted by the excited luminophore; a measuring chamber for receiving a fluid, wherein the fluid includes magnetic microspheres; a membrane arranged between the measuring chamber and a measuring medium for exchanging an analyte between the measuring medium and the fluid in the measuring chamber, wherein the measuring diaphragm is impermeable to the magnetic microspheres; and an electromagnet for attracting magnetic microspheres to a sensor membrane with a fluid-contacting surface and/or to a fluid-contacting surface of the optical waveguide, or to a surface of a transparent substrate layer of the optical sensor unit that is connected to the optical waveguide.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: December 15, 2020
    Assignee: Endress+Hauser Conducta GmbH+Co. KG
    Inventor: Andreas Löbbert
  • Patent number: 10818519
    Abstract: Disclosed are an apparatus and a method for drying a substrate. The apparatus for drying a substrate includes a chamber having a treatment space in the interior thereof, a substrate support unit configured to the substrate in the treatment space, a conversion unit configured to convert a state of the substrate supported by the substrate support unit between a horizontal state and an inclined state, a fluid supply unit configured to supply a drying fluid into the treatment space, and a controller configured to control the conversion unit and the fluid supply unit.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: October 27, 2020
    Assignee: SEMES CO., LTD.
    Inventors: Yong Hee Lee, Young Hun Lee
  • Patent number: 9991101
    Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis and rotatable about the central axis, a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate, and an open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: June 5, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: William Johanson, Brij Datta, Fuhong Zhang, Adolph Miller Allen, Yu Y. Liu, Prashanth Kothnur
  • Patent number: 9966242
    Abstract: A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: May 8, 2018
    Inventor: Xinsheng Guo
  • Patent number: 9953813
    Abstract: Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: April 24, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xianmin Tang, Joung Joo Lee, Guojun Liu
  • Patent number: 9911526
    Abstract: A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: March 6, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Tetsuya Endo, Einstein Noel Abarra
  • Patent number: 9852893
    Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: December 26, 2017
    Assignees: Tokyo Electron Limited, University of Houston System
    Inventors: Lee Chen, Demetre J. Economou, Jianping Zhao, Merritt Funk
  • Patent number: 9761441
    Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: September 12, 2017
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SEMICAT, INC.
    Inventors: Jeonghee Park, Jae Yeol Park
  • Patent number: 9589772
    Abstract: The present invention is a plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high density plasma in high vacuum and like this plasma generation source applying like this plasma generation source to sputtering system, neutral particle beam source, thin film deposition system combining sputtering system and neutral particle beam source. According to the present invention, it generates plasma by using microwave through the microwave irradiating equipment and magnetic field by more than one pair of the belt type magnets and above goal can be accomplished maximizing plasma confinement effect by inducing electron returning trajectory in accordance with above continuous structure on belt type magnet.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: March 7, 2017
    Assignee: KOREA BASIC SCIENCE INSTITUTE
    Inventors: Suk Jae Yoo, Seong Bong Kim
  • Patent number: 9245677
    Abstract: An improved system for concentrating magnetic flux of a multi-pole magnetic structure at the surface of a ferromagnetic target uses first pole pieces having a magnet-to-pole piece interface with a first area and a pole piece-to-target interface with a second area substantially smaller than the first area for concentrating flux of the multi-pole magnetic structure at each pole piece-to-target interface, where the target can be a ferromagnetic material, complementary pole pieces, or a gap. The improved system may also include a magnetic circuit having second pole pieces located between the first pole pieces and the target that controls the flux directed from the first pole pieces to the target.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: January 26, 2016
    Assignee: Correlated Magnetics Research, LLC.
    Inventors: Larry W. Fullerton, Mark D. Roberts
  • Patent number: 9236226
    Abstract: In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle ?1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°<?1?180°.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: January 12, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Takafumi Kimura, Chishio Koshimizu
  • Publication number: 20150136596
    Abstract: A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.
    Type: Application
    Filed: April 11, 2013
    Publication date: May 21, 2015
    Applicant: Tokyo Electron Limited
    Inventors: Kanto Nakamura, Toru Kitada, Atsushi Gomi, Tetsuya Miyashita
  • Patent number: 9028659
    Abstract: Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity while extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: May 12, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Alan Ritchie, Zhenbin Ge, Tza-Jing Gung, Vivek Gupta
  • Publication number: 20150122644
    Abstract: Provided is an arc evaporation source equipped with a target, a ring-shaped magnetic field guide magnet and a back side magnetic field generation source. The magnetic field guide magnet is aligned in a direction perpendicular to the evaporation face of the target and has a polarity that is the magnetization direction facing forward or backward. The back side magnetic field generation source is disposed at the rear of the magnetic field guide magnet, which is at the side of the back side of the target, and forms magnetic force lines running in the direction of magnetization of the magnetic field guide magnet. The target is disposed such that the evaporation face is positioned in front of the magnetic field guide magnet.
    Type: Application
    Filed: June 11, 2013
    Publication date: May 7, 2015
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinichi Tanifuji, Kenji Yamamoto
  • Publication number: 20150125375
    Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.
    Type: Application
    Filed: November 4, 2014
    Publication date: May 7, 2015
    Inventors: YUN ZHOU, RHONDA HYNDMAN, STEPHEN R. BURGESS
  • Publication number: 20150114823
    Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.
    Type: Application
    Filed: October 24, 2013
    Publication date: April 30, 2015
    Inventors: Joung Joo LEE, Guojun LIU, Wei W. WANG, Prashanth KOTHNUR
  • Patent number: 9011655
    Abstract: A device for generating a cold plasma in a vacuum enclosure includes a cathode body having hollow chambers for confining the plasma. Magnets are placed around each hollow chamber for creating a magnetic field forcing electrons to rotate about the field lines. The cathode body cooperates with an element for circulating a coolant to extract the heat generated by an intense ion bombardment at each of the hollow chambers.
    Type: Grant
    Filed: February 1, 2008
    Date of Patent: April 21, 2015
    Assignee: H.E.F.
    Inventors: Philippe Maurin-Perrier, Hervé Chavanne, Laure Poigt
  • Publication number: 20150101924
    Abstract: A plasma deposition assembly for use in coating an interior surface of an object is provided. The assembly includes a head portion including an anode and a cathode adjacent to the anode. The cathode is fabricated from a coating material. The cathode also includes an outer surface adjacent to the interior surface of the object, wherein current is supplied to the cathode to form an arc on the outer surface such that the coating material is directed substantially radially outward from the outer surface of the cathode towards the interior surface of the object. The assembly also includes a moveable arm coupled to the head portion and configured to translate the head portion relative to the interior surface of the object as the arc deposits the coating material on the interior surface of the object.
    Type: Application
    Filed: October 16, 2013
    Publication date: April 16, 2015
    Applicant: General Electric Company
    Inventors: Scott Andrew Weaver, Dennis Michael Gray
  • Patent number: 9005413
    Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: April 14, 2015
    Assignee: ULVAC, Inc.
    Inventors: Shuji Kodaira, Tomoyuki Yoshihama, Koukichi Kamada, Kazumasa Horita, Junichi Hamaguchi, Shigeo Nakanishi, Satoru Toyoda
  • Publication number: 20150075970
    Abstract: Apparatus for providing a magnetic field within a process chamber are provided herein. In some embodiments, an apparatus for providing a magnetic field within a process chamber includes: an inner rotating mechanism including a first plate having a central axis, wherein the first plate includes and a first plurality of magnets and is rotatable about the central axis; and an outer lifting mechanism including a ring disposed proximate the first plate, the ring having a second plurality of magnets coupled to a bottom surface of the ring proximate the peripheral edge of the ring, wherein the ring is movable in a direction perpendicular to the first plate.
    Type: Application
    Filed: August 13, 2014
    Publication date: March 19, 2015
    Inventor: KEITH A. MILLER
  • Publication number: 20150062710
    Abstract: A process for manufacturing a transparent body for use in a touch screen panel is provided.
    Type: Application
    Filed: March 30, 2012
    Publication date: March 5, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jürgen Grillmayer, Thomas Werner Zilbauer
  • Publication number: 20150060262
    Abstract: A sputtering system comprises a magnetron assembly for depositing liquid metal films on a substrate. The magnetron assembly comprises a horizontal planar magnetron with a liquid metal target, a cylindrical rotatable magnetron with a metal target and a set of one or more shields forming a chamber between the planar and the rotatable magnetron.
    Type: Application
    Filed: August 10, 2012
    Publication date: March 5, 2015
    Inventor: Dennis R. Hollars
  • Publication number: 20150064364
    Abstract: A method of forming a metalloid-containing material comprises the step of preparing a hydrometalloid compound in a low volume on-demand reactor. The method further comprises the step of feeding the hydrometalloid compound prepared in the microreactor to a deposition apparatus. Additionally, the method comprises the step of forming the metalloid-containing material from the hydrometalloid compound via the deposition apparatus. A deposition system for forming the metalloid-containing material comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus.
    Type: Application
    Filed: February 14, 2013
    Publication date: March 5, 2015
    Inventors: Binh Nguyen, Michael Telgenhoff
  • Patent number: 8968538
    Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: March 3, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Toru Kitada, Naoki Watanabe, Motonobu Nagai, Masahiro Suenaga, Takeo Konno
  • Patent number: 8956516
    Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 17, 2015
    Assignee: Semicat, Inc.
    Inventors: Jin Hyun Kim, Michael Nam, Jae Yeol Park, Jonggu Park
  • Patent number: 8951394
    Abstract: A magnetron sputtering electrode for use in a rotatable cylindrical magnetron sputtering device, the electrode including a cathode body defining a magnet receiving chamber and a cylindrical target surrounding the cathode body. The target is rotatable about the cathode body A magnet arrangement is received within the magnet receiving chamber, the magnet arrangement including a plurality of magnets. A shunt is secured to the cathode body and proximate to a side of the magnet arrangement, the shunt extending in a plane substantially parallel to the side of the magnet arrangement. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device is also disclosed.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: February 10, 2015
    Assignee: Angstrom Sciences, Inc.
    Inventors: Mark A. Bernick, Richard Newcomb
  • Publication number: 20150034476
    Abstract: A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.
    Type: Application
    Filed: July 7, 2014
    Publication date: February 5, 2015
    Inventors: Frank M. Cerio, Robert Gabriel Hieronymi
  • Publication number: 20150027883
    Abstract: A sputtering apparatus includes a plurality of targets arranged to face each other and a magnetic unit producing magnetic field. A space between the targets is disposed on a substrate on which a deposition is being made during a sputtering process. The magnetic unit includes at least two magnet members. The space between the targets is surrounded by a space between the at least two magnet members. Each of the magnet members includes at least one first magnet and at least one second magnet separated from each other with an interval.
    Type: Application
    Filed: December 17, 2013
    Publication date: January 29, 2015
    Inventors: Hun Kim, Jin-Woo Park, Ou-Hyen Kim, Sun-Jin Lee
  • Publication number: 20150021167
    Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
    Type: Application
    Filed: July 16, 2014
    Publication date: January 22, 2015
    Inventor: David Christie
  • Publication number: 20150014158
    Abstract: Provided is a magnetic field generation apparatus including: two or more main magnetic pole portions configured to generate a main magnetic field; one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; and a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions.
    Type: Application
    Filed: June 30, 2014
    Publication date: January 15, 2015
    Inventors: Jun Sasaki, Atsuhiro Abe, Ryoichi Hiratsuka
  • Publication number: 20150008120
    Abstract: This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerisation, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control.
    Type: Application
    Filed: January 14, 2013
    Publication date: January 8, 2015
    Inventor: Jonathan Price
  • Publication number: 20150007940
    Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.
    Type: Application
    Filed: January 15, 2013
    Publication date: January 8, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazushi Kaneko, Kazunori Funazaki, Hideo Kato
  • Patent number: 8920613
    Abstract: A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: December 30, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Boitnott, Keith A. Miller
  • Patent number: 8911602
    Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: December 16, 2014
    Inventor: Makoto Nagashima
  • Patent number: 8906208
    Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 9, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Toru Kitada, Naoki Watanabe, Motonobu Nagai
  • Patent number: 8900428
    Abstract: In one embodiment, a magnetron assembly comprises a plurality of magnets and a yoke configured to hold the plurality of magnets in at least four independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion. The outer portion substantially surrounds the perimeter of the inner portion. The magnets used to form the outer portion have a first polarity and the magnets used to form the inner portion having a second polarity. The outer portion of the pattern comprises a pair of elongated sections that are substantially parallel to one another. The outer portion of the pattern comprises a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections and wherein each turnaround section comprises a plurality of magnets having the first polarity. Other embodiments are described.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: December 2, 2014
    Assignee: Sputtering Components, Inc.
    Inventors: Daniel Theodore Crowley, William A. Meredith, Jr.
  • Patent number: 8900427
    Abstract: A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: December 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Keith A. Miller, Michael Allen Flanigan, Hari Ponnekanti
  • Patent number: 8900419
    Abstract: In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: December 2, 2014
    Assignee: National Institute for Materials Science
    Inventors: Masayuki Kamei, Takamasa Ishigaki
  • Publication number: 20140339545
    Abstract: To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than ±3%, preferably less than or equal to ±2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition.
    Type: Application
    Filed: May 14, 2014
    Publication date: November 20, 2014
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Shunpei YAMAZAKI
  • Publication number: 20140332376
    Abstract: A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet.
    Type: Application
    Filed: February 20, 2014
    Publication date: November 13, 2014
    Applicant: INTEVAC, INC.
    Inventors: Vinay Shah, Alex Riposan, Terry Bluck
  • Patent number: 8882976
    Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Mo Chung, Min-Jae Jeong, Jong-Won Hong, Eu-Gene Kang, Heung-Yeol Na, Ki-Yong Lee
  • Patent number: 8877019
    Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: November 4, 2014
    Assignee: Canon Anelva Corporation
    Inventor: Franck Ernult
  • Patent number: 8871064
    Abstract: A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: October 28, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tza-Jing Gung, Xinyu Fu, Arvind Sundarrajan, Edward P. Hammond, IV, Praburam Gopalraja, John C. Forster, Mark A. Perrin, Andrew S. Gillard
  • Publication number: 20140311893
    Abstract: A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behind the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. In certain embodiments, the movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. In certain embodiments, magnet power and/or speed varies as function of direction of magnet travel.
    Type: Application
    Filed: February 20, 2014
    Publication date: October 23, 2014
    Applicant: Intevac, Inc.
    Inventors: Vinay Shah, Alexandru Riposan, Terry Bluck, Vladimir Kudriavtsev