Abstract: The invention provides a vibrating deposition device, which includes a vacuum chamber, a fixed rod and a powder tank. The vacuum chamber includes an inner side surface, and a plurality of bulges and notches are arranged on the inner side surface. The fixed rod and the powder tank are arranged in an accommodating space of the vacuum chamber, wherein the powder tank is used for accommodating powders and contacts the inner side surface of the vacuum chamber through a protruding unit. When the vacuum chamber rotates, the protruding unit will be displaced between the bulge and the notch, and the powder tank will be displaced up and down relative to the vacuum chamber to vibrate powders in the powder tank, so that a uniform film will be formed on the surface of powders.

Abstract: A device, a method, and a use for coating lenses are proposed, wherein the lenses to be coated are arranged in pairs over parallel, tubular targets. The distance of the targets to each other and/or to the lenses is varied for individual adaption. Further, the lenses are coated from both sides.

Abstract: A rotatable sputtering target is provided for use in a sputtering system having a plurality of hollow sleeves of sputtering material arranged on a hollow e backing tube so as to form an annular space that is occupied by a bonding agent and a thermally conductive element which is a woven metal mesh.

Abstract: A device may include one or more memories and one or more processors, communicatively coupled to the one or more memories, to receive design information, wherein the design information identifies desired values for a set of layers of an optical element to be generated during one or more runs; receive or obtain historic information identifying a relationship between a parameter for the one or more runs and an observed value relating to the one or more runs or the optical element; determine layer information for the one or more runs based on the historic information, wherein the layer information identifies run parameters, for the set of layers, to achieve the desired values; and cause the one or more runs to be performed based on the layer information.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: Certain example embodiments relate to sputtering apparatuses that include a plurality of targets such that a first one or ones of target(s) may be used for sputtering in a first mode, while a second one or ones of target(s) may be used for sputtering in a second mode. Modes may be switched in certain example embodiments by rotating the position of the targets, e.g., such that one or more target(s) to be used protrude into the main chamber of the apparatus, while one or more target(s) to be unused are recessed into a body portion of a cathode of (e.g., integrally formed with) the sputtering apparatus. The targets may be cylindrical magnetic targets or planar targets. At least one target location also may be made to accommodate an ion beam source.

Abstract: A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

Abstract: Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.

Abstract: The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

Abstract: A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a); an anode (2b); the magnetic array being arranged to create an asymmetric plasma distribution with respect to the normal angle of incidence to a substrate (3); and means (1b) for enhancing the magnetic field to produce a relatively low impedance path for electrons flowing from the cathode (2a) to the anode (2b).

Abstract: There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one intaglio printing plate (10) to be coated, a vacuum system (4) coupled to the vacuum chamber (3) adapted to create vacuum in the inner space (30) of the vacuum chamber (3), and a physical vapour deposition (PVD) system (5) adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface (10a) of the intaglio printing plate (10), which physical vapour deposition system (5) includes at least one coating material target (51, 52) comprising a source of the wear-resistant coating material to be deposited onto the 32 engraved surface (10a) of the intaglio printing plate (10).

Abstract: A production method combining cathode arc and magnetron sputtering methods to form an antibacterial film on the surface of an object. Inside the vacuum chamber, both a cathode arc target source and a magnetron sputtering target source are configured. On the cathode arc target source, at least one of a zirconium, titanium, or chromium target is installed. On the magnetron sputtering target source, a silver target is installed. Argon and nitrogen are filled into the vacuum chamber to respectively ionize the silver target and one of the zirconium target, titanium target, or chromium target. Remote control is used to adjust the ionization proportion between one of the zirconium, titanium, or chromium target and the silver target to be 90-99%:1-9%. The surface of the object is formed with one of the zirconium nitride-silver mixed antibacterial film, titanium nitride-silver mixed antibacterial film, or chromium nitride-silver mixed antibacterial film.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit (30) having cathodes (7a and 7b) arranged on the same circumference with respect to the rotational center, and having a power-supply mechanism for supplying power to each cathode; a sensor (14) for detecting the position of cathode; and a rotation mechanism for rotating the cathode unit (30).

Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.

Abstract: A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets.

Abstract: Substrate processing systems and methods are described for processing substrates having two or more regions. The processing includes one or more of molecular self-assembly and combinatorial processing. At least one of materials, processes, processing conditions, material application sequences, and process sequences is different for the processing in at least one region of the substrate relative to at least one other region of the substrate. Processing systems are described that include numerous processing modules. The modules include a site-isolated reactor (SIR) configured for one or more of molecular self-assembly and combinatorial processing of a substrate.

Abstract: Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.

Abstract: A method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index are provided. The sputter-deposition system includes a plurality of target cathodes, each of which comprises a target material having a different composition, that are powered by a single DC power supply. The plurality of target cathodes are cosputtered to deposit a layer composed of a mixture of materials on a substrate. The composite refractive index of the layer is controlled by adjusting an operating parameter of the plurality of target cathodes. Suitable operating parameters include cathode power, cathode voltage, cathode current, an angle between a cathode support and the substrate, and a flow rate of a reactive gas.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: Sputtering chambers including one or more first sputtering targets within the sputtering chamber and one or more second sputtering targets are generally provided. Each first sputtering target comprises a source material, and each second sputtering target comprises the source material and a dopant. A conveyor system is configured to transport a plurality of substrates through the sputtering chamber to deposit a thin film onto a surface of each substrate. A power source is electrically connected to each of the first sputtering targets and the second sputtering target. A target shield can also be included within the sputtering chamber, and can be positioned between a portion of the second sputtering target and the conveyor system. The dopant can be present within the second sputtering target as a discrete insert within a cavity defined by the source material. Methods are also provided for making a sputtering target and depositing a thin film.

Abstract: A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided.

Abstract: A magnetron sputtering apparatus comprising: a deposition chamber; a processing chamber in communication with the deposition chamber, wherein a target area composed of targets is located at the place where the processing chamber is connected with the deposition chamber; a transfer chamber provided adjacent to the processing chamber, wherein a first gas-tight gate is provided on a wall of the transfer chamber, the first gas-tight gate being opened or closed so as to control the vacuum degree in the transfer chamber and to replace the targets; a transfer device which is provided in the processing chamber and/or the transfer chamber, transfers the target between the transfer chamber and the processing chamber via a second gas-tight gate provided on the adjacent walls of the transfer chamber and the processing chamber for replacement when the transfer chamber is in a set vacuum degree state.

Abstract: The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

Abstract: A sputtering apparatus includes a susceptor for receiving a substrate, and a first target device disposed to be opposite to a center region of a substrate and at least second and third target devices disposed to be opposite to peripheral regions of the substrate, wherein the second and third target devices are rotatable.

Abstract: A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.

Abstract: The invention is an apparatus and method for depositing a coating onto a substrate. The apparatus includes a vacuum chamber with an inlet for supplying a precursor gas to the chamber. The chamber includes a carrier for locating the substrate in the chamber, a first anode having an aperture in which plasma can be formed, and a magnetic field source. The substrate, when located in the carrier, constitutes a first cathode. When a substantially linear magnetic field between the anode and the cathode is formed, the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear magnetic field.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: A system for substrate deposition. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer.

Abstract: A sputter-coating apparatus is configured for forming coatings on a plurality of workpieces, and includes a deposition chamber defining a cavity, a plurality of targets received in the cavity, and a plurality of supporting assemblies. Each target includes a first target plate and an opposite second target plate. The supporting assemblies are received in the cavity and arranged between the first target plates and the second target plates. Each supporting assembly includes a hollow rotating post for rotating about a first axis substantially parallel to a lengthwise direction thereof, at least one support extending from the post, and at least one driving unit. Each support includes a connecting arm rotatably connected to the post and a fixing portion attached to the connecting arm for supporting a workpiece. The driving unit is configured for driving each connecting arm to rotate relative to the corresponding post about a second axis.

Abstract: Methods for processing events occurring in a process chamber are provided. In one method, an operation includes carrying gas and receiving an optical signal from the process chamber to an analysis tool that operates in response to the optical signal having a signal-to-noise ratio (SNR) for process analysis. And, dividing the carried gas and optical signal into a plurality of separate gas and optical signals between the process chamber and the analysis tool. The dividing is configured through separate apertures so that the apertures collectively maintain the SNR of the optical signal received at the tool. Methods provide a septum in a second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.

Abstract: To provide a vacuum processing apparatus applicable to various manufacturing processes, by efficiently and highly reliably stacking films of various types and thicknesses and by downsizing the manufacturing apparatus by suppressing size increase of the apparatus due to increase of the number of film forming chambers caused by increase and complexity of process steps. A vacuum processing apparatus is provided with a plurality of film forming process parts which are provided with rotating transfer tables and film forming chambers. The rotating transfer tables form a transfer path for a work to be processed, in chambers which can be vacuum-exhausted. The film forming chambers are provided for depositing a film on the work to be processed which is arranged and transferred along a circumference which has a rotating shaft of the rotating transfer table as a center.

Abstract: A composite coating apparatus includes a main body, two carrying boards, and two actuators. The main body defines a first chamber and a second chamber with a separating board intervening therebetween. The separating board defines a coating opening intercommunicating with the chambers. The carrying boards are received in the first chamber and rotatably connected to the separating board at two sides of the coating opening. Each carrying board defines a receiving groove for holding a substrate. The actuators are configured for driving the carrying boards to rotate between a first coating position, in which the substrate is exposed to the second chamber for a first coating process carried out in the second chamber via the coating opening, and a second coating position, in which the substrate faces away from the separating board for a second coating process carried out in the first chamber.

Abstract: A coating apparatus includes a housing, a sputter mechanism, an evaporation mechanism, and a workpiece transport assembly. The housing defines a receiving space. The workpiece transport assembly includes a fixing plate, a first transport member, and a first shaft. The fixing plate is secured to the housing via the receiving space and divides the receiving space into a sputter chamber and an evaporation chamber. The sputter mechanism is mounted in the sputter chamber, and the evaporation mechanism is mounted in the evaporation chamber. The fixing plate defines a through hole. The sputter chamber communicates with the evaporation chamber via the through hole. The first transport member is configured to transport at least one workpiece. The first shaft is secured to the first transport member and rotatably mounted to the housing.

Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.

Abstract: A plurality of targets are disposed in parallel with, and at a given distance to, one another. In case a predetermined thin film is formed by sputtering, the occurrence of non-uniformity in the film thickness distribution and the film quality distribution can be restricted. During the time when electric power is charged to a plurality of targets (31a to 31h) which are disposed inside a sputtering chamber (11a) so as to lie opposite to the process substrate (S), and are disposed at a predetermined distance from, and in parallel with, one another, thereby forming a predetermined thin film by sputtering, each of the targets is reciprocated at a constant speed in parallel with the process substrate. Also, magnet assemblies that form tunnel-shaped magnetic flux (M) in front of each target are reciprocated at a constant speed in parallel with each of the targets.

Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cathode.

Abstract: A device for use with an RF generating source, a first electrode, a second electrode and an element. The RF generating source is operable to provide an RF signal to the first electrode and thereby create a potential between the first electrode and the second electrode. The device comprises a connecting portion and a current sink. The connecting portion is operable to electrically connect to one of the first electrode, the second electrode and an element. The current sink is in electrical connection with the connection portion and a path to ground. The current sink comprises a voltage threshold. The current sink is operable to conduct current from the connecting portion to ground when a voltage on the electrically connected one of the first electrode, the second electrode and the element is greater than the voltage threshold.

Abstract: A coating apparatus includes a deposition case, a reaction assembly, two precursors, a target, and a driving assembly. The deposition case includes a housing defining a cavity for receiving workpieces. The reaction assembly receives in the cavity and includes an outer barrel, an inner barrel, a plurality of nozzles, and a plurality of pipes. The outer barrel includes a main body and two protruding bodies. The main body and the inner barrel cooperatively define a first room therebetween. Each protruding body defines a second room communicating with the first room. The inner barrel defines a third room. The nozzles extend from the main body and communicate with the first room. The pipes extend from the inner barrel and communicate with the third room. The precursors receive in the second rooms. The target receives in the third room. The driving assembly drives the housing to rotate relative to the reaction assembly.

Abstract: A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots. Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.

Abstract: Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section.

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: Systems and methods are disclosed for face target sputtering to fabricate semiconductors by providing one or more materials with differential coefficients of expansion in the FTS chamber; and generating a controlled pressure and size with the one or more materials during sintering.

Abstract: A sputtering apparatus comprises a plurality of independent plasma generation regions formed in a single process chamber; a cathode disposed at an edge portion of each of the plurality of independent plasma generation regions; a gas supply line to supply a reaction gas to the plurality of independent plasma generation regions; and a shielding film disposed between the plurality of independent plasma generation regions to prevent reaction gases generated in the plurality of independent plasma generation regions from being mixed and introduced to an outside.

Abstract: An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow.

Abstract: The invention relates to a film coating system. The system includes serially arranged working zones including a rough vacuum feeding section, a high vacuum feeding section, an optical layer coating zone, a pretreatment zone, a transparent conductive layer coating zone and a pressure balanced exhausting zone. The system further includes a conveyor device for carrying a substrate which has been provided on its periphery with an ink frame layer and for delivering the substrate to the respective working zones, and a controlling device that controls the times for the substrate to be retained in the respective working zones based upon a time interval between the entry of two successive conveyor devices into the rough vacuum feeding section. The invention ensures a smooth operation of the production line, and the transparent conductive film coated thereby does not easily exfoliate and exhibits the advantageous properties of high optical performance and low surface resistance.

Abstract: A machine for metallization of three-dimensional objects of small sizes comprising a feeding device (2) to supply a succession of objects to be metallized (20), a metallizing device (3) comprising a main sputtering chamber (31) in a condition of permanent vacuum and a loading and unloading chamber (30) for a single object, which can be switched between a vacuum condition and an ambient-pressure condition and is operatively connected to the sputtering chamber (31), an unloading device (4) for the succession of metallized objects (21), which is operatively placed downstream of the metallizing device (3), and a painting station (10, 14) of the airless type and operatively disposed downstream of the feeding device (2) and upstream of the unloading device (4).

Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.