Plural Diverse Treatment Stations, Zones, Or Coating Material Source Within Single Chamber Patents (Class 204/298.26)
  • Patent number: 9165587
    Abstract: A system is provided for etching patterned media disks. A movable electrode is utilized to perform sputter etch. The electrode moves to near or at slight contact to the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.
    Type: Grant
    Filed: December 5, 2008
    Date of Patent: October 20, 2015
    Assignee: INTEVAC, INC.
    Inventors: Michael S. Barnes, Terry Bluck
  • Patent number: 9127353
    Abstract: Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: September 8, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Seiken Matsumoto, Seiji Kuwabara
  • Patent number: 9039873
    Abstract: The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: May 26, 2015
    Inventor: Koji Tsunekawa
  • Patent number: 9028660
    Abstract: A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a); an anode (2b); the magnetic array being arranged to create an asymmetric plasma distribution with respect to the normal angle of incidence to a substrate (3); and means (1b) for enhancing the magnetic field to produce a relatively low impedance path for electrons flowing from the cathode (2a) to the anode (2b).
    Type: Grant
    Filed: August 14, 2008
    Date of Patent: May 12, 2015
    Assignee: Gencoa Ltd
    Inventor: Victor Bellido-Gonzalez
  • Publication number: 20150075979
    Abstract: There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one intaglio printing plate (10) to be coated, a vacuum system (4) coupled to the vacuum chamber (3) adapted to create vacuum in the inner space (30) of the vacuum chamber (3), and a physical vapour deposition (PVD) system (5) adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface (10a) of the intaglio printing plate (10), which physical vapour deposition system (5) includes at least one coating material target (51, 52) comprising a source of the wear-resistant coating material to be deposited onto the 32 engraved surface (10a) of the intaglio printing plate (10).
    Type: Application
    Filed: April 12, 2013
    Publication date: March 19, 2015
    Inventors: François Gremion, Laurent Claude
  • Patent number: 8968529
    Abstract: A production method combining cathode arc and magnetron sputtering methods to form an antibacterial film on the surface of an object. Inside the vacuum chamber, both a cathode arc target source and a magnetron sputtering target source are configured. On the cathode arc target source, at least one of a zirconium, titanium, or chromium target is installed. On the magnetron sputtering target source, a silver target is installed. Argon and nitrogen are filled into the vacuum chamber to respectively ionize the silver target and one of the zirconium target, titanium target, or chromium target. Remote control is used to adjust the ionization proportion between one of the zirconium, titanium, or chromium target and the silver target to be 90-99%:1-9%. The surface of the object is formed with one of the zirconium nitride-silver mixed antibacterial film, titanium nitride-silver mixed antibacterial film, or chromium nitride-silver mixed antibacterial film.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: March 3, 2015
    Assignee: Ever Brite Technology Products Inc.
    Inventor: Ming-Hsien Chao
  • Patent number: 8961745
    Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: February 24, 2015
    Assignee: VOLTASOLAR S.r.l.
    Inventors: Maurizio Filippo Acciarri, Simona Olga Binetti, Leonida Miglio, Maurilio Meschia, Raffaele Moneta, Stefano Marchionna
  • Patent number: 8956515
    Abstract: Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit (30) having cathodes (7a and 7b) arranged on the same circumference with respect to the rotational center, and having a power-supply mechanism for supplying power to each cathode; a sensor (14) for detecting the position of cathode; and a rotation mechanism for rotating the cathode unit (30).
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: February 17, 2015
    Assignee: Canon Anelva Corporation
    Inventor: Masahiro Shibamoto
  • Patent number: 8920618
    Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: December 30, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Hong Sheng Yang, Zhendong Hong, Chi-I Lang
  • Patent number: 8911602
    Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: December 16, 2014
    Inventor: Makoto Nagashima
  • Patent number: 8900426
    Abstract: A sputtering apparatus including a target holder configured to hold at least two targets; a substrate holder configured to hold a substrate; a first shutter plate arranged between the target holder and the substrate holder, the first shutter plate having at least two holes and being capable of rotating around an axis; a second shutter plate arranged between the first shutter plate and the substrate holder, the second shutter plate having at least two holes and being capable of rotating around the axis; wherein the first and second shutter plates are rotated such that paths are simultaneously created between the at least two targets and the substrate through the at least two holes of the rotated first shutter plate and the at least two holes of the rotated second shutter plate, and a film is formed on the substrate by co-sputtering of the at least two targets.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: December 2, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Shuji Nomura, Ayumu Miyoshi, Hiroshi Miki
  • Patent number: 8882914
    Abstract: Substrate processing systems and methods are described for processing substrates having two or more regions. The processing includes one or more of molecular self-assembly and combinatorial processing. At least one of materials, processes, processing conditions, material application sequences, and process sequences is different for the processing in at least one region of the substrate relative to at least one other region of the substrate. Processing systems are described that include numerous processing modules. The modules include a site-isolated reactor (SIR) configured for one or more of molecular self-assembly and combinatorial processing of a substrate.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: November 11, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Tony P. Chiang, David E. Lazovsky, Sandra G. Malhotra
  • Patent number: 8864958
    Abstract: A method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index are provided. The sputter-deposition system includes a plurality of target cathodes, each of which comprises a target material having a different composition, that are powered by a single DC power supply. The plurality of target cathodes are cosputtered to deposit a layer composed of a mixture of materials on a substrate. The composite refractive index of the layer is controlled by adjusting an operating parameter of the plurality of target cathodes. Suitable operating parameters include cathode power, cathode voltage, cathode current, an angle between a cathode support and the substrate, and a flow rate of a reactive gas.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: October 21, 2014
    Assignee: JDS Uniphase Corporation
    Inventors: Markus K. Tilsch, Joseph Smith, Marius Grigonis
  • Patent number: 8864956
    Abstract: Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: October 21, 2014
    Assignee: United Technologies Corporation
    Inventors: Igor V. Belousov, Anatoly I. Kuzmichev, Vladimir Biber, Robert L. Memmen
  • Publication number: 20140262765
    Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 18, 2014
    Applicant: Vaeco, Inc.
    Inventor: Richard DeVito
  • Patent number: 8821638
    Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.
    Type: Grant
    Filed: August 21, 2009
    Date of Patent: September 2, 2014
    Assignee: Kobe Steel, Ltd.
    Inventors: Hiroshi Tamagaki, Toshiki Segawa
  • Publication number: 20140238849
    Abstract: Sputtering chambers including one or more first sputtering targets within the sputtering chamber and one or more second sputtering targets are generally provided. Each first sputtering target comprises a source material, and each second sputtering target comprises the source material and a dopant. A conveyor system is configured to transport a plurality of substrates through the sputtering chamber to deposit a thin film onto a surface of each substrate. A power source is electrically connected to each of the first sputtering targets and the second sputtering target. A target shield can also be included within the sputtering chamber, and can be positioned between a portion of the second sputtering target and the conveyor system. The dopant can be present within the second sputtering target as a discrete insert within a cavity defined by the source material. Methods are also provided for making a sputtering target and depositing a thin film.
    Type: Application
    Filed: February 25, 2013
    Publication date: August 28, 2014
    Applicant: First Solar, Inc.
    Inventors: Scott Daniel Feldman-Peabody, Stacy Ann Black, Robert Dwayne Gossman, Patrick Lynch O'Keefe
  • Patent number: 8815013
    Abstract: A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: August 26, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Tony P Chiang, Richard R Endo, James Tsung
  • Patent number: 8808514
    Abstract: A magnetron sputtering apparatus comprising: a deposition chamber; a processing chamber in communication with the deposition chamber, wherein a target area composed of targets is located at the place where the processing chamber is connected with the deposition chamber; a transfer chamber provided adjacent to the processing chamber, wherein a first gas-tight gate is provided on a wall of the transfer chamber, the first gas-tight gate being opened or closed so as to control the vacuum degree in the transfer chamber and to replace the targets; a transfer device which is provided in the processing chamber and/or the transfer chamber, transfers the target between the transfer chamber and the processing chamber via a second gas-tight gate provided on the adjacent walls of the transfer chamber and the processing chamber for replacement when the transfer chamber is in a set vacuum degree state.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: August 19, 2014
    Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
    Inventor: Zhenyu Xie
  • Patent number: 8770143
    Abstract: The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: July 8, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Rick Endo, Kurt Weiner, Indranil De, James Tsung, Maosheng Zhao
  • Patent number: 8741116
    Abstract: A sputtering apparatus includes a susceptor for receiving a substrate, and a first target device disposed to be opposite to a center region of a substrate and at least second and third target devices disposed to be opposite to peripheral regions of the substrate, wherein the second and third target devices are rotatable.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: June 3, 2014
    Assignees: LG Display Co., Ltd., AVACO Co., Ltd., LG Electronics Inc.
    Inventors: Tae Hyun Lim, Hwan Kyu Yoo, Byung Han Yun
  • Patent number: 8691063
    Abstract: The invention is an apparatus and method for depositing a coating onto a substrate. The apparatus includes a vacuum chamber with an inlet for supplying a precursor gas to the chamber. The chamber includes a carrier for locating the substrate in the chamber, a first anode having an aperture in which plasma can be formed, and a magnetic field source. The substrate, when located in the carrier, constitutes a first cathode. When a substantially linear magnetic field between the anode and the cathode is formed, the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear magnetic field.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: April 8, 2014
    Assignee: Diamond Hard Surfaces Ltd.
    Inventor: Sergey Aleksandrov
  • Patent number: 8691064
    Abstract: A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: April 8, 2014
    Assignee: Raytheon Canada Limited
    Inventors: Daniel B. Mitchell, Geoffrey G Harris
  • Publication number: 20130270105
    Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.
    Type: Application
    Filed: September 26, 2012
    Publication date: October 17, 2013
    Applicant: View, Inc.
    Inventor: Soladigm, Inc.
  • Patent number: 8557093
    Abstract: A system for substrate deposition. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: October 15, 2013
    Assignee: SunPower Corporation
    Inventors: Peter Cousins, Hsin-Chiao Luan, Thomas Pass, John Ferrer, Rex Gallardo, Stephen F. Meyer
  • Patent number: 8535496
    Abstract: A sputter-coating apparatus is configured for forming coatings on a plurality of workpieces, and includes a deposition chamber defining a cavity, a plurality of targets received in the cavity, and a plurality of supporting assemblies. Each target includes a first target plate and an opposite second target plate. The supporting assemblies are received in the cavity and arranged between the first target plates and the second target plates. Each supporting assembly includes a hollow rotating post for rotating about a first axis substantially parallel to a lengthwise direction thereof, at least one support extending from the post, and at least one driving unit. Each support includes a connecting arm rotatably connected to the post and a fixing portion attached to the connecting arm for supporting a workpiece. The driving unit is configured for driving each connecting arm to rotate relative to the corresponding post about a second axis.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: September 17, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Chung-Pei Wang
  • Patent number: 8524099
    Abstract: Methods for processing events occurring in a process chamber are provided. In one method, an operation includes carrying gas and receiving an optical signal from the process chamber to an analysis tool that operates in response to the optical signal having a signal-to-noise ratio (SNR) for process analysis. And, dividing the carried gas and optical signal into a plurality of separate gas and optical signals between the process chamber and the analysis tool. The dividing is configured through separate apertures so that the apertures collectively maintain the SNR of the optical signal received at the tool. Methods provide a septum in a second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: September 3, 2013
    Assignee: Lam Research Corporation
    Inventors: Jeff A. Bogart, Leonard Sharpless, Harmeet Singh
  • Patent number: 8506774
    Abstract: To provide a vacuum processing apparatus applicable to various manufacturing processes, by efficiently and highly reliably stacking films of various types and thicknesses and by downsizing the manufacturing apparatus by suppressing size increase of the apparatus due to increase of the number of film forming chambers caused by increase and complexity of process steps. A vacuum processing apparatus is provided with a plurality of film forming process parts which are provided with rotating transfer tables and film forming chambers. The rotating transfer tables form a transfer path for a work to be processed, in chambers which can be vacuum-exhausted. The film forming chambers are provided for depositing a film on the work to be processed which is arranged and transferred along a circumference which has a rotating shaft of the rotating transfer table as a center.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: August 13, 2013
    Assignee: Shibaura Mechatronics Corporation
    Inventors: Jiro Ikeda, Yoji Takizawa
  • Patent number: 8500978
    Abstract: A composite coating apparatus includes a main body, two carrying boards, and two actuators. The main body defines a first chamber and a second chamber with a separating board intervening therebetween. The separating board defines a coating opening intercommunicating with the chambers. The carrying boards are received in the first chamber and rotatably connected to the separating board at two sides of the coating opening. Each carrying board defines a receiving groove for holding a substrate. The actuators are configured for driving the carrying boards to rotate between a first coating position, in which the substrate is exposed to the second chamber for a first coating process carried out in the second chamber via the coating opening, and a second coating position, in which the substrate faces away from the separating board for a second coating process carried out in the first chamber.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: August 6, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Shao-Kai Pei
  • Patent number: 8500977
    Abstract: A coating apparatus includes a housing, a sputter mechanism, an evaporation mechanism, and a workpiece transport assembly. The housing defines a receiving space. The workpiece transport assembly includes a fixing plate, a first transport member, and a first shaft. The fixing plate is secured to the housing via the receiving space and divides the receiving space into a sputter chamber and an evaporation chamber. The sputter mechanism is mounted in the sputter chamber, and the evaporation mechanism is mounted in the evaporation chamber. The fixing plate defines a through hole. The sputter chamber communicates with the evaporation chamber via the through hole. The first transport member is configured to transport at least one workpiece. The first shaft is secured to the first transport member and rotatably mounted to the housing.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: August 6, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Shao-Kai Pei
  • Patent number: 8470145
    Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.
    Type: Grant
    Filed: June 23, 2009
    Date of Patent: June 25, 2013
    Assignee: Ulvac, Inc.
    Inventors: Naoki Morimoto, Tomoyasu Kondo, Daisuke Mori, Kyuzo Nakamura
  • Patent number: 8460522
    Abstract: A plurality of targets are disposed in parallel with, and at a given distance to, one another. In case a predetermined thin film is formed by sputtering, the occurrence of non-uniformity in the film thickness distribution and the film quality distribution can be restricted. During the time when electric power is charged to a plurality of targets (31a to 31h) which are disposed inside a sputtering chamber (11a) so as to lie opposite to the process substrate (S), and are disposed at a predetermined distance from, and in parallel with, one another, thereby forming a predetermined thin film by sputtering, each of the targets is reciprocated at a constant speed in parallel with the process substrate. Also, magnet assemblies that form tunnel-shaped magnetic flux (M) in front of each target are reciprocated at a constant speed in parallel with each of the targets.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: June 11, 2013
    Assignee: ULVAC, Inc.
    Inventors: Yuichi Oishi, Takashi Komatsu, Junya Kiyota, Makoto Arai
  • Patent number: 8454810
    Abstract: A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cathode.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: June 4, 2013
    Assignee: 4D-S Pty Ltd.
    Inventor: Makoto Nagashima
  • Patent number: 8440061
    Abstract: A device for use with an RF generating source, a first electrode, a second electrode and an element. The RF generating source is operable to provide an RF signal to the first electrode and thereby create a potential between the first electrode and the second electrode. The device comprises a connecting portion and a current sink. The connecting portion is operable to electrically connect to one of the first electrode, the second electrode and an element. The current sink is in electrical connection with the connection portion and a path to ground. The current sink comprises a voltage threshold. The current sink is operable to conduct current from the connecting portion to ground when a voltage on the electrically connected one of the first electrode, the second electrode and the element is greater than the voltage threshold.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: May 14, 2013
    Assignee: Lam Research Corporation
    Inventors: John C. Valcore, Jr., Ed Santos
  • Patent number: 8388753
    Abstract: A coating apparatus includes a deposition case, a reaction assembly, two precursors, a target, and a driving assembly. The deposition case includes a housing defining a cavity for receiving workpieces. The reaction assembly receives in the cavity and includes an outer barrel, an inner barrel, a plurality of nozzles, and a plurality of pipes. The outer barrel includes a main body and two protruding bodies. The main body and the inner barrel cooperatively define a first room therebetween. Each protruding body defines a second room communicating with the first room. The inner barrel defines a third room. The nozzles extend from the main body and communicate with the first room. The pipes extend from the inner barrel and communicate with the third room. The precursors receive in the second rooms. The target receives in the third room. The driving assembly drives the housing to rotate relative to the reaction assembly.
    Type: Grant
    Filed: May 31, 2010
    Date of Patent: March 5, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Shao-Kai Pei
  • Patent number: 8357272
    Abstract: A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots. Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: January 22, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Tadashi Itoh, Masaaki Ashida, Hajime Ishihara, Takuya Iida
  • Patent number: 8349156
    Abstract: Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section.
    Type: Grant
    Filed: May 14, 2008
    Date of Patent: January 8, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Michael W. Stowell, Richard Newcomb
  • Patent number: 8314027
    Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: November 20, 2012
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8308915
    Abstract: Systems and methods are disclosed for face target sputtering to fabricate semiconductors by providing one or more materials with differential coefficients of expansion in the FTS chamber; and generating a controlled pressure and size with the one or more materials during sintering.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: November 13, 2012
    Assignee: 4D-S Pty Ltd.
    Inventor: Makoto Nagashima
  • Patent number: 8303786
    Abstract: A sputtering apparatus comprises a plurality of independent plasma generation regions formed in a single process chamber; a cathode disposed at an edge portion of each of the plurality of independent plasma generation regions; a gas supply line to supply a reaction gas to the plurality of independent plasma generation regions; and a shielding film disposed between the plurality of independent plasma generation regions to prevent reaction gases generated in the plurality of independent plasma generation regions from being mixed and introduced to an outside.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: November 6, 2012
    Assignee: LG Display Co., Ltd.
    Inventors: Jeong-Kweon Park, Sung-Eun Kim
  • Patent number: 8282794
    Abstract: An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: October 9, 2012
    Assignee: G & H Technologies, LLC
    Inventor: Vladimir Gorokhovsky
  • Publication number: 20120247953
    Abstract: The invention relates to a film coating system. The system includes serially arranged working zones including a rough vacuum feeding section, a high vacuum feeding section, an optical layer coating zone, a pretreatment zone, a transparent conductive layer coating zone and a pressure balanced exhausting zone. The system further includes a conveyor device for carrying a substrate which has been provided on its periphery with an ink frame layer and for delivering the substrate to the respective working zones, and a controlling device that controls the times for the substrate to be retained in the respective working zones based upon a time interval between the entry of two successive conveyor devices into the rough vacuum feeding section. The invention ensures a smooth operation of the production line, and the transparent conductive film coated thereby does not easily exfoliate and exhibits the advantageous properties of high optical performance and low surface resistance.
    Type: Application
    Filed: March 28, 2011
    Publication date: October 4, 2012
    Inventors: CHIEN-MIN WENG, Shih-Liang Chou, Tzu-Wen Chu, Fu-Jen Wang, Feng-Shiang Yao
  • Publication number: 20120234670
    Abstract: A machine for metallization of three-dimensional objects of small sizes comprising a feeding device (2) to supply a succession of objects to be metallized (20), a metallizing device (3) comprising a main sputtering chamber (31) in a condition of permanent vacuum and a loading and unloading chamber (30) for a single object, which can be switched between a vacuum condition and an ambient-pressure condition and is operatively connected to the sputtering chamber (31), an unloading device (4) for the succession of metallized objects (21), which is operatively placed downstream of the metallizing device (3), and a painting station (10, 14) of the airless type and operatively disposed downstream of the feeding device (2) and upstream of the unloading device (4).
    Type: Application
    Filed: April 25, 2011
    Publication date: September 20, 2012
    Applicant: TAPEMATIC S.P.A.
    Inventor: LUCIANO PEREGO
  • Patent number: 8236152
    Abstract: A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.
    Type: Grant
    Filed: November 24, 2006
    Date of Patent: August 7, 2012
    Assignee: Ascentool International Ltd.
    Inventors: George X. Guo, Kai-an Wang
  • Patent number: 8187434
    Abstract: A system for large scale manufacture of thin film photovoltaic cells. The system includes a chamber comprising a plurality of compartments in a common vacuum ambient therein. Additionally, the system includes one or more shutter screens removably separating each of the plurality of compartments. The system further includes one or more transfer tools configured to transfer a substrate from one compartment to another without breaking the common vacuum ambient. The substrate is optically transparent and is characterized by a lateral dimension of about 1 meter or greater for a solar module. Embodiments of the invention provide that at least some of the plurality of compartments are configured to subject the substrate to one or more thin film processes to form a Cu-rich Cu—In composite material overlying the substrate and at least one of the plurality of compartments is configured to subject the Cu-rich Cu—In composite material to a thermal process to form a chalcogenide structured material.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: May 29, 2012
    Assignee: Stion Corporation
    Inventors: Howard W. H. Lee, Chester A. Farris, III
  • Patent number: 8163144
    Abstract: The present invention relates to a magnetron sputtering device and technique for depositing materials onto a substrate at a high production rate in which the deposited films have predictive thickness distribution and in which the apparatus can operate continuously and repeatedly for very long periods. The present invention has realized increased production by reducing cycle time. Increased coating rates are achieved by coupling a planetary drive system with a large cathode. The cathode diameter is greater than the diameter of a planet and less than twice the diameter of the planet. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.
    Type: Grant
    Filed: August 17, 2005
    Date of Patent: April 24, 2012
    Inventors: Markus K. Tilsch, Richard I. Seddon, Georg J. Ockenfuss, Jeremy Hayes, Robert E. Klinger
  • Patent number: 8152975
    Abstract: A target assembly for material deposition includes a first target piece having a first sputtering surface and comprising a first target material that is to be sputtered off the first sputtering surface and to deposit on a substrate. The target assembly also includes a second target piece juxtaposed to the first target piece. The second target piece comprises a second sputtering surface and a second target material that can be sputtered off the second sputtering surface and to deposit on the substrate. The first target piece and the second target piece are configured to be switched in positions and/or orientations after a period of sputtering operations.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: April 10, 2012
    Assignee: Ascentool International
    Inventors: George X. Guo, Kai-an Wang
  • Patent number: 8147657
    Abstract: A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: April 3, 2012
    Assignee: Ulvac, Inc.
    Inventors: Satoru Takasawa, Sadayuki Ukishima, Noriaki Tani, Satoru Ishibashi
  • Patent number: 8147924
    Abstract: An apparatus for manufacturing a magnetic recording disk includes a magnetic-film deposition chamber in which a magnetic film for a recording layer is deposited on a substrate; a lubricant-layer preparation chamber in which a lubricant layer is prepared on the substrate in vacuum; and a cleaning chamber in which the substrate is cleaned in vacuum after the magnetic-film deposition in the magnetic-film chamber and before the lubricant-layer preparation in the lubricant-layer chamber. The apparatus may further include a transfer system that transfers the substrate from the cleaning chamber to the lubricant-layer preparation chamber without exposing the substrate to the atmosphere.
    Type: Grant
    Filed: September 2, 2008
    Date of Patent: April 3, 2012
    Assignee: Canon Anelva Corporation
    Inventors: Naoki Watanabe, Nobuyoshi Watanabe, Kazunori Tani, Shinji Furukawa, Hiromi Sasaki, Osamu Watabe
  • Patent number: 8137510
    Abstract: This invention relates to a coater for the coating, in particular, of large-area substrates by means of cathode sputtering, the coater having a coating chamber and, provided therein, a cathode assembly (2) where the material to be sputtered is located on a target (4) with a curved surface, the material to be sputtered being located, in particular, on the lateral surface of a cylinder, there being in a single coating chamber for a coherent coating zone at least three, preferably more, cathode assemblies (2) with rotatable, curved targets (4) positioned one beside the other.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: March 20, 2012
    Assignee: Applied Materials GmbH & Co. KG
    Inventors: Stefan Bangert, Frank Fuchs, Ralph Lindenberg, Andreas Lopp, Uwe Schüssler, Tobias Stolley