Abstract: This application discloses a multi-layer film deposition apparatus comprising; plural cathodes comprising targets respectively, a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multi-layer film is deposited by sputtering. The targets are arranged at positions where their center axes are on a circumference. The main rotation mechanism rotates the cathodes around the axis in common to the circumference. The substrate is located at a position within an area in view to the direction of the axis. The area is formed of two loci of points on the rotated targets. One of the locus is drawn by the point nearest to the axis, and the other locus is drawn by the point furthest from the axis.

Abstract: A sputtering apparatus is provided with a plurality of ringlike targets arranged on a concentric basis in upper part of a process chamber. A pedestal for holding a semiconductor substrate is placed inside the process chamber and a dc power supply is connected to the targets and to the pedestal. Further, the process chamber is connected to a vacuum pump for evacuating the inside thereof and a gas supply for introducing a process gas for generation of plasma, normally argon gas, into the inside of the process chamber. Sputtering yields of the targets can be adjusted by separately controlling potentials of the respective targets. This permits the apparatus to improve uniformity of deposition.

Abstract: A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided.

Abstract: Apparatus for forming a multilayer film on at least one surface of a substrate comprises a vacuum chamber including: (a) a pair of parallel top and bottom walls connected by a side wall; (b) at least one entry/exit means in the side wall for insertion and withdrawal of a substrate from the chamber; (c) a plurality of spaced-apart, radially extending, linearly elongated sputtering sources arranged in a co-planar array adjacent one of the top or bottom walls of the chamber, each of the linearly elongated sputtering sources having a length and a width; and (d) a gripper/transporter for gripping and moving a substrate in a generally circular, planar path past each of the plurality of radially extending sputtering sources, such that the at least one deposition surface of the substrate faces each of the sputtering sources during movement along the circular path, for deposition of the multilayer film thereon.

Abstract: A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.

Abstract: A magnetron sputtering device and method for applying an interference layer to a substrate includes a magnetron sputtering chamber (A) which houses a substrate carrying assembly (B). The substrate carrying assembly comprises a primary rotation table (10), rotating about its central vertical axis (12) and at least one secondary table (36) mounted to an upper surface (14) of the primary rotation table. Substrates (42) are either horizontally or vertically loaded on to the secondary table. The substrates rotate about their symmetrical axis. First and second targets (50a, 50b) are housed by the chamber and are disposed on opposite sides of the chamber. The primary rotation table rotates the substrates between a position adjacent a first target where a layer having a low refractive index is applied to the substrates and a position adjacent a second target where a layer having a high refractive index is applied to the substrates.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. At least one set of vertically mounted, dual and triple rotatable cylindrical (or planar) magnetrons with associated vacuum pumps, form semi-isolated sputtering modules. The sputtering modules can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point.

Abstract: An apparatus for forming an electrode for a lithium secondary cell capable of readily forming an active material layer constituted by at least two elements and controlling the composition of the active material layer is obtained. The apparatus for forming an electrode for a lithium secondary cell comprises a first sputtering source for sputtering a first material forming the active material layer onto the surface of the collector and a second sputtering source for sputtering a second material forming the active material layer onto the surface of the collector. Plasma regions of the first and second sputtering sources are arranged to overlap with each other. Thus, the active material layer constituted by at least two elements is readily formed with excellent reproducibility. When power applied to the first sputtering source and the second sputtering source is controlled independently of each other, the composition of the active material layer constituted by at least two elements is readily controlled.

Abstract: A focused magnetron sputter system includes a processing chamber, a plurality of sputter sources arranged within the processing chamber, a substrate holder disposed above the plurality of sputter sources, a rotational shutter arranged between a substrate and the plurality of sputter sources for selectively forming a coating on the substrate, and a power supply connected to the substrate holder for supplying a substrate bias.

Abstract: A sputtering device is provided in which at least one target is sputtered by sputtering discharge to produce a film of target material on at least the first surface of a substrate. The sputtering device has a principal rotating mechanism that rotates the at least one target about an axis of revolution coaxial with the central axis of the substrate. The target is positioned offset from and circumferential to the central axis of the substrate coaxial with the axis of revolution. A magnet mechanism for magnetron discharge of the sputtering discharge forms a magnetic field asymmetrical to a central axis of the target and is rotated by an auxiliary rotating mechanism. The principal rotating mechanism integrates rotation of the targets with the magnet mechanism.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: In the fine-particle classification apparatus of the present invention, a carrier gas velocity in a take-in section to introduce the aerosol to the fine-particle classification apparatus from the aerosol generation apparatus is increased so as to decrease the static pressure in the take-in section. It is thereby possible to decrease the static pressure in the take-in section than the total pressure in the aerosol generation apparatus. As a result, it is possible to introduce the aerosol inside the fine-particle classification apparatus with a total pressure equal to or higher than that in the aerosol generation apparatus from a fine particle generating area, i.e. aerosol generation apparatus with a pressure equal to or lower than that in the fine-particle classification apparatus.

Abstract: In accordance with an embodiment of the present invention, apparatus for ion-assisted magnetron deposition takes a form that includes a magnetron, a deposition substrate displaced from the magnetron, and an ion source also displaced from the magnetron and located so that the ion beam from the ion source is directed at the deposition substrate. The ion source is operated without an electron-emitting cathode-neutralizer, the electron current for this function being provided by electrons from the magnetron. In one specific embodiment, the ion source is operated so that the potential of the deposition substrate is maintained close to that of a common ground for the magnetron and the ion source. In another embodiment, the ion source is of the Hall-current type and the discharge current of the ion source is approximately equal in magnitude to the current of the magnetron discharge.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: Apparatus for multi-chambered semiconductor wafer processing comprising a polygonal structure having at least two semiconductor process chambers disposed on one side. An area between the process chambers provides a maintenance access to the semiconductor processing equipment. Additionally, the apparatus may be clustered or daisy-chained together to enable a wafer to access additional processing chambers without leaving the controlled environment of the semiconductor wafer processing equipment.

Abstract: An improved method and apparatus for applying discrete area holograms or other optical devices directly onto documents or other substrates in a continuous process analogous to the operation of a printing press. The continuous process is carried out in a vacuum chamber in which at least two process steps are performed in sequence: the formation of a micro-grooved discrete resin area and a localized coating of it with a reflective or refractive material layer. The formation of the micro-grooved resin area can be accomplished by electron beam curing of the resin. The localized coating of the micro-grooved resin can be done by sputtering. One or more other steps, including pre-coating, post-coating and partial removal of the reflective or refractive layer, may also be carried out as part of the continuous process within the vacuum chamber.

Abstract: A cathode assembly for magnetron sputtering of a workpiece, and sputtering apparatus and methods of sputtering using same are provided. The cathode assembly includes a tubular cathode, which may be cylindrical in cross section along its length, or which may be curved or flexible, depending on the shape of workpiece that is to be sputtered, and which has a sputtering length of Ls. The cathode assembly also includes a magnet package, or a plurality of spaced magnet packages, each magnet package including either one magnet or a plurality of spaced magnets of alternating polarity, and having a magnet package length Lpkg which is less than Ls. The cathode assembly further includes one or more means for positioning, and preventing radial displacement of, the cathode along the axis of symmetry of the cathode.

Abstract: A hollow cathode magnetron for sputtering target material from the inner surface of a target onto an off-spaced substrate. The magnetron is in the shape of a truncated cone, also known as a conical frustum. The target cone is backed by a conical cathode maintained at a predetermined voltage for attracting gas ions into the inner surface of the target cone to sputter material therefrom. The sputtering plasma is made uniform over the entire surface of the target by assuring that the magnitude of the component of the magnetic field tangent to the target surface is constant. The plasma is further confined to the vicinity of the target by using electrostatic elements. Sputter coatings on planar substrates can achieve areal thickness nonuniformities of less than +/−0.2%.

Abstract: A sputtering apparatus for depositing layers of material onto a substrate includes a vacuum chamber, a first target and a second target positioned within the vacuum chamber. A source of power is placed in electrical communication with the first target and the second target. A switch alternately connects the source of power between the first target and the second target. The first target and the second target are different materials. The switch connects power to the first target when the transport mechanism positions the substrate near the first target and the switch connects power to the second target when the transport mechanism positions the substrate closer to the second target.

Abstract: A sputter deposition apparatus for depositing a film onto a substrate includes a surrogate rotating magnetron includes an internal magnet and a wall thickness that permits a fringe magnetic field to support an electron cyclotron resonance. Auxiliary coating sources are modulated for depositing a desired sequence of material onto the substrate.

Abstract: A sputtering station for a disk-shaped workpiece includes one loadlock chamber, one sputtering source with a sputtering surface, a transport chamber with two workpiece handling openings, one communicating with the loadlock chamber and the other with the sputtering source. A transport device in the transport chamber has two workpiece carrier arms extending radially with respect to a rotation axis of the device. Each arm can extend and retract radially and carries a workpiece holder. The two openings of the transport chamber are radially opposite each other with respect to the axis of rotation so that the workpiece holders of the two arms may be swung toward each of the openings and about an arc of 180°.

Abstract: A merged ion beam and plasma vapor deposition chamber and associated manufacturing process are disclosed in which thin film depositions occur in a merged deposition chamber. The chamber utilizes both ion beam and RF/DC magnetron sputtering in a single chamber. The deposition of the layers can occur in the chamber without substrate transfer in a low vacuum, eliminating the need for multiple chambers and associated timely wafer transfer steps. The result is a film deposition and growth process which utilizes the advantages unique to each of the RF/DC and IBD processes without the film degradation that occurs in robot wafer transfer chambers found in combination systems known in the art.

Abstract: A heat-treatable coated glass article comprises a substantially transparent substrate with a substantially transparent dual-function coating on a surface of the substrate. The coating provides low emissivity and high anti-solar performance properties. It comprises a first anti-reflection layer of dielectric material, preferably tungsten oxide. An infra-red reflective layer of silver metal and/or copper metal overlies the anti-reflection dielectric layer. A buffer layer, such as a chromium buffer layer, is positioned between the anti-reflection layer and the infra-red reflective layer. Also, optionally, a color control layer may be used, preferably being positioned between the anti-reflection layer and the substrate. A second buffer layer directly overlies the infra-red reflective layer. A second anti-reflection layer overlies the second buffer layer. In accordance with a method of manufacturing the coated article, each of the layers of the coating is deposited in turn by D.C.

Abstract: Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

Abstract: The present invention is directed to a sputtering device for depositing multi-layer films on a substrate, the sputtering device comprising at least one planar-magnetron-sputtering-cathode and at least one facing-targets-sputtering-cathode housed in a single vacuum chamber, and adapted such that each planar-magnetron-sputtering-cathode and facing-targets-sputtering-cathode can be selectively positioned for sputtering deposition onto a substrate

Abstract: Disclosed is a method and an apparatus for coating electromagnetic wave shielding films, by which adhesive forces between coating objects and the electromagnetic wave shielding films are strengthened, and the films can be uniformly coated on the coating objects. In the method, surfaces of coating objects are etched, and then electromagnetic wave shielding films are coated on the surfaces of the coating objects. In the apparatus, a cylindrical rotating jig is disposed in a chamber and contains a plurality of coating objects loaded therein. The rotating jig is rotated at a predetermined speed. The rotating jig is put into and drawn out of the chamber. Targets functioning as cathodes are disposed inside and outside of the rotating jig. A controller controls operation of the apparatus.

Abstract: A system and method for simultaneously performing sputter deposition on a plurality of planar substrates. An ion current source generates an ion beam in which ions are directed toward a target. The target is formed from a section of a sphere. Each of the plurality of planar substrates has a deposition surface that is tangent to a surface of the sphere. In addition, a substrate that is a section of a sphere may be used. The deposition thickness across the spherically-shaped substrate is uniform.

Abstract: A method for establishing and maintaining a reliable ground for reactive sputtering systems. A spatially extended high density plasma is generated in a large region surrounding the sputtering target. The plasma electrically connects the target to a part of the coating machine that is not subject to deposition of sputtered material from the target. The plasma is generated by an applicator which is independent of the target.

Abstract: A system and method for performing sputter deposition on a substrate. First, second, and third divergent ion current sources generate first, second and third divergent ion beams, respectively. The substrate faces the first ion current source. The first target faces the second ion current source, and the second target faces the third ion current source. The central axis of each ion current source is orthogonal to the central axes of the other two ion current sources.

Abstract: The invention relates to a vapor deposition coating apparatus. More particularly it relates to an apparatus in which the ion current density is carefully controlled to improve coating. This control enhances the versatility and enlarges the range of deposition conditions which can be achieved within a single apparatus, so that coatings with very different properties can be deposited in the same equipment. The vapor deposition apparatus includes a vacuum chamber (1), at least one coating means or ionisation source (3) disposed at or about the periphery of a coating zone (2), one or more internal magnetic means (6) positioned such that the magnetic field lines (7) are generated across the coating zone (2) and means for altering the strength or position of the magnetic field lines to aid confinement.

Abstract: A method of applying diffusion coatings by magnetron sputtering includes the use of a solenoid coil which produces an alternating magnetic field to inductively heat the article to be coated. The coating may preferably be a multi-layer or multi-component diffusion coating which may include a diffusion barrier and/or a thermal barrier.

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. Vertically mounted, dual rotatable cylindrical magnetrons with associated vacuum pumps form semi-isolated sputtering modules, which can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point. The apparatus may take the form of a circular arrangement of modules for batch coating of wafer-like substrates, or the modules may be arranged linearly for the coating of large planar substrates.

Abstract: A sputtering installation has two longitudinally extended magnetrons disposed next to one another and each has a target on an upper side thereof. Increasing utilization of the targets in the sputtering installation is accomplished by homogenizing the discharge resistance of the magnetrons along the directrix such that a partial discharge resistance of a target point on the directrix has the same magnitude as the partial discharge resistance of a different target point on the directrix.

Abstract: A sputter coating apparatus includes at least a first sputter coating line and a second sputter coating line. The first and second sputter coating lines may be operated in parallel with one another in certain embodiments in order to independently form coating systems and respective coated articles. However, the two coating lines may also be utilized so as to operate in series with one another to form a coated article. In the latter case, a transition zone is provided between an end of the first line and an end of the second line so as to selectively couple an output of the first line to an input of the second line when it is desired to utilize the two sputter coating lines in series with one another. In such a manner, it is possible to avoid many of the inefficiencies associated with conventional sputter coating apparatuses and processes.

Abstract: A cross flow system for metalizing compact discs, capable of being interposed in-line in the production of the compact discs after premastering, mastering, electro-forming, and molding includes a vacuum chamber having diametrically opposed vacuum locks and multiple metalization sources in the form of magnetrons, with a preferred cross flow including the introduction of a disc to be metalized through one lock and the exit of the metalized disc through the diametrically opposite lock. The double vacuum lock diametrically opposed cross flow system eliminates the problems of throughput limitations, high rate deposition, substrate pitting, and software complexity due to indexing which makes prior systems both costly and inefficient. The system also permits processing of more than one substrate or compact disc title such that multiple titled compact discs can be processed simultaneously.

Abstract: A system for producing disc-like optical data carriers comprises an injection-molding machine for manufacturing a disc-like substrate, and a finishing device for applying a reflective layer to the substrate and for applying a protective layer to the reflective layer. The injection-molding machine and the finishing device are integrated in a single production unit. An optical inspection unit is also integrated in the production unit.

Abstract: Magnetron discharges are pulse-operated to avoid the so-called “arcing”. In the case of magnetron discharges from alternating current-fed magnetrons, the process is limited to the minor power of the energy supply because of the load-carrying capacity of the required electric components. When the magnetron discharges are fed by direct current, their effectiveness deteriorates because of the deposition of layers on the anode surfaces. The new process should enable a high supply power and prevent arcing. In magnetron discharges with at least two magnetron electrodes, the energy is supplied in such a way that at least one magnetron electrode is a cathode or anode and a number n1 of direct current pulses of said polarity is supplied. The poles of at least one magnetron electrode are then reversed and a number n2 of direct currents of this polarity are supplied. The process is carried on in this manner, the frequency of the direct current pulses being higher than that of the polarity reversals.

Abstract: The uniformity, density and directionality of an ionized metal plasma is significantly improved by positioning a cylindrical target between an RF coil and the chamber wall and wafers above and below the coil at opposite ends of the sputtering chamber. Ions generated by electron impact are attracted to the biased substrates, thereby providing essentially void free interconnections through insulating layers having through holes with very high aspect ratios.

Abstract: The invention relates to a device, in particular for a laser-induced vacuum are discharge evaporator for depositing of multiple layers with a high level of purity and high deposition rates on large-area components. According to the invention, the material source for the coating material is in a source chamber which can be evacuated and can be separated in a vacuum-tight manner from the actual coating chamber in which the substrate to be coated is located. The evaporator can, in particular, be used for deposition of amorphous carbon layers which are hydrogen-free and superhard and/or which contain hydrogen, in conjunction with high-purity metal layers or for the reactive plasma-enhanced deposition of, for example, oxidic, carbide, nitride hard material layers of ceramic layers or a combination thereof. The corresponding plasma sources can be flange-mounted on any suitable coating chambers and, consequently, also combined with conventional coating processes, for example magnetron sputtering.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.

Abstract: Process for the depositing, onto a substrate, of a coating essentially constituted of an electronic conductor compound, in which the said coating is formed by producing alternatively, on the one hand, in at least one depositing zone, one or several deposits of a determined thickness of an electronic conductor element on the substrate, and, on the other hand, in at least one reaction zone, one or several reactions of the element thus deposited with ions of a reactive gas which are implanted into the deposit of the above-mentioned element over approximately this entire thickness determined in a way as to form, preferably with the totality of this element, the said compound, the above-mentioned ions being submitted to a kinetic energy below 2000 V, while the aforesaid thickness of the deposit of the element is determined as a function of the kinetic energy applied in such a way as to allow the implantation of these ions over approximately this entire thickness.

Abstract: A sputter coating apparatus includes at least a first sputter coating line and a second sputter coating line. The first and second sputter coating lines may be operated in parallel with one another in certain embodiments in order to independently form coating systems and respective coated articles. However, the two coating lines may also be utilized so as to operate in series with one another to form a coated article. In the latter case, a transition zone is provided between an end of the first line and an end of the second line so as to selectively couple an output of the first line to an input of the second line when it is desired to utilize the two sputter coating lines in series with one another. In such a manner, it is possible to avoid many of the inefficiencies associated with conventional sputter coating apparatuses and processes.

Abstract: This invention relates to sputtering apparatus for depositing material onto a workpiece.

Abstract: An apparatus for forming a multilayer film on a substrate surface comprises a multi-target sputtering source having a planar end face adapted for rotation about a central axis and including at least a pair of independently operable planar magnetron cathodes having sputtering targets composed of different materials, and a substrate mounting means for providing a stationary substrate in spaced-apart, facing relation to the sputtering source. According to the inventive method, the multi-target source is rotated about its central axis while the substrate is maintained stationary, thereby depositing a multi-layer film stack on the substrate. The invention finds particular utility in the formation of superlattice structures usable as recording medium layers in the fabrication of magnetic and magneto-optical (MO) data/information storage and retrieval media.

Abstract: Sputtering method and apparatus for forming a coating on both sides of a flat substrate or on the entire surface of a bulky substrate without involving rotation of the substrate. At least one pair of sputtering cathodes each having a target attached thereto are arranged in a film-forming chamber capable of controlling a vacuum atmosphere with their target sides facing each other, and a substrate is disposed in front of the targets. A voltage is applied to the sputtering cathodes in such a manner that the polarity alternates between the sputtering cathodes making the pair to induce a glow discharge between the sputtering cathodes. The target on each sputtering cathode is thereby sputtered and deposited on the substrate.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: A multi-layer sputter deposition chamber or cluster tool module is described. The sputter deposition chamber includes a plurality of magnetrons mounted on a rotatable member that defines an aperture. A predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the sputter deposition chamber. A transport mechanism transports the substrate in a path of the sputtered ions in a first and a second direction that is substantially opposite to the first direction.

Abstract: A device for the sputter application of hard material coatings, including an exhaustible vacuum chamber, at least one sputtering source for depositing a coating material, a plurality of fixtures for supporting a plurality parts to be coated, the fixtures being mounted on planet gears which are movable via a planetary drive, a centrally disposed heating device, a reactive gas inlet, and a plurality of movable screens for covering the at least one sputtering source, the screens being arranged to surround the fixtures, wherein the heating device, the screens, and the planetary drive comprise an assembly which is removable from the vacuum chamber.

Abstract: A flexible, modular thin film deposition machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a thin film deposition station including a serial deposition chamber and an inter-chamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the deposition station. Within the serial sputtering chambers of at least one deposition station there is at most partial environmental separation, whereas between different deposition stations the separation is complete. The resulting simplification of the transport mechanism provides for a high throughput rate while simultaneously minimizing contamination of individual thin film layers.