Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

Abstract: A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

Abstract: An object of the invention is to provide a sputtering device which can provide increased distribution of film formation and coverage distribution better than prior sputtering devices. Thus, this invention is that, in the sputtering device constituted of a substrate holder for holding a substrate, at least one target for forming a thin film on the substrate, at least one sputtering cathode which has the target and magnets arranged behind the substrate, an axis of the target is inclined to an axis of the sputtering cathode, and the sputtering cathode is rotated on its axis to make the target swing relative to the substrate.

Abstract: A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target, possibly a combination of rotation about the center and radial oscillation. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.

Abstract: A sputtering system for depositing a thin film on a substrate includes a vacuum chamber, a support for supporting the substrate in the vacuum chamber, a target arranged to oppose the support, a fixed plate formed on a first side of the target, and a plurality of electromagnets formed on the fixed plate in a cell pattern.

Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.

Abstract: Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.

Abstract: A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.

Abstract: A small unbalanced magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly may pass through the target center, thus allowing full target coverage. A geared planetary mechanism may include a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plate supporting a cantilevered magnet assembly on the side of the drive plate facing the target. The erosion profile may be controlled by varying the rotation rate through the rotation cycle or by modulating the target power. A second planetary stage may be added or non-circular gears be used. Auxiliary electromagnetic coils may create a focusing magnetic field.

Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

Abstract: A magnetron system for a sputtering target having an annular vault facing the wafer to be coated and having inner and outer sidewalls and a roof. A small magnetron is positioned over the roof. A first magnet assembly having a first magnet polarity along the target axis is positioned behind the inner sidewall. A second magnet assembly having an opposed second opposed magnetic polarity is disposed in back of the outer sidewall and has magnetic strength much greater than the first magnet assembly but its strength is asymmetrically distributed about the target axis. The second magnet assembly and the roof assembly are rotated together about the target axis. The rotating asymmetric sidewall magnet assembly may also be used with a hollow-cathode target, with or without a roof magnetron.

Abstract: A method for controlling plasma density distribution over a target of a magnetron sputter source has at least one electron trap generated with a magnetic field over the target. The field forms a closed circulating loop and, viewed in cross section, has a tunnel shape. Due to the loop of the tunnel-shaped magnetic field as well as of an electric field that is at an angle to it and which is generated between an anode and the target acting as the cathode, an electron current is formed, which forms along and in the loop current loop. In a region along the loop of the magnetic field, the field conditions are locally varied under control. With changes of field conditions, the component of the loop electron current is varied which is anodically coupled out of the loop.

Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

Abstract: A rotating sputtering target(s) is segmented so as to include a plurality of different sputtering material portions or segments radially dispersed around the outer periphery of the target. This enables a plurality of different layers to be sputter-deposited, one after the other, using the same sputtering target as the target rotates. The thicknesses of the different layers can be controlled by the radially extensive size of the different segments, the rotation speed of the target, the material sputter rate, the sputtering power used, and/or the line speed of the sputter coater in which the target(s) is located. One or more such targets may be used in a coater according to different embodiments of this invention.

Abstract: A magnetic control oscillation-scanning sputter includes a sputtering target, a base and an elongated magnet. The sputtering target has a surface with a target located thereon corresponding to the base. The target being sputtered is deposited on the base. The elongated magnet is located on the rear side of the sputtering target and moved reciprocately to control the deposition of the target. The elongated magnet has two ends each which is coupled with a magnetic erasing means for reducing excessive magnetic field intensity at the two ends to avoid affecting the sputter quality.

Abstract: A sputtering magnetron arrangement is disclosed, comprising a magnetic field generator (1) and a target (4) which is associated with said magnetic field generator (1). The magnetic field generator (1) includes a magnetically active element (5-9) and an adjusting means (20-25) which is adapted to deform or deflect locally the magnetically active element (5-9) so as to alter with respect to the target (4) the position of at least a portion of the magnetic field generator (1).

Abstract: A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.

Abstract: A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is allocated above the cathode 4 so as to face the substrate 5 toward the target 3 on the cathode 4, a permanent magnet 71 that generates magnetic field 141 and is allocated under the cathode 4, and a rotation controller 12 for rotating the permanent magnet 71 so as to pivot on a center axis of the target 3.

Abstract: A sputtering conductor target is provided, which includes: a center portion; an edge portion around the center portion and having a thickness larger than the center portion; and an inclined portion disposed between the center portion and the edge portion and making an angle of about 30°-70° with a normal to a top surface of the edge portion.

Abstract: A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.

Abstract: A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target, possibly a combination of rotation about the center and radial oscillation. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

Abstract: A magnetron sputtering electrode for use with a magnetron sputtering device, wherein the magnetron sputtering electrode comprises a cathode body, a drive unit coupled to the cathode body, a target received by the cathode body, and a closed loop magnet arrangement received within a magnet receiving chamber and coupled to the drive unit. The closed loop magnet arrangement is comprised of a plurality of magnets adapted for motion relative to the target by the drive unit, wherein at least one of the plurality of magnets is a profiled magnet having a contoured top portion. A method of improving target utilization in sputtering applications is also disclosed.

Abstract: A sputtering chamber includes a sputtering target with a front target surface, and a magnetron behind the sputtering target. The magnetron provides a magnetic field at the front target surface along a generally round path that includes a path indentation. A shutter is spaced apart from the front target surface by a shutter spacing. A substrate is aligned with a central region in front of the front target surface and spaced apart from the front target surface by a selected spacing that is greater than the shutter spacing. The central region has a diameter defined by a uniformly sputtered thickness of deposited layers on the substrate. The path indentation is set to a path indentation depth that adjusts the selected spacing to maximize the diameter.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as nickel and cobalt, for example, and its method of use, in which self-ionized plasma (SIP) sputtering is promoted. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. One embodiment of the present inventions is directed to sputter depositing a metal layer by biasing a sputter target with pulsed power in which the power applied to the target alternates between low and high levels. The high levels are, in one embodiment, sufficiently high to maintain a plasma for ionizing deposition material. The low levels are, in one embodiment, sufficiently low such that the power applied to the target during the high and low levels is, on average, low enough to facilitate deposition of thin layers if desired.

Abstract: An object of the present invention is to alter the shape of the magnetic field with ease in the state of auxiliary magnet poles being disposed in a sputtering apparatus. In a sputtering apparatus according to the present invention, one or more magnetron type sputtering evaporation sources 3 and one or more auxiliary magnet poles 9 are disposed in a chamber 1 so as to surround a solid substance 2 to be deposited, wherein an angle changing mechanism for changing the alignment angle of the auxiliary magnet poles 9 relative to the solid substance 2 to be deposited in order to alter the shape of the magnetic field formed by the magnetron type sputtering evaporation sources 3 and the auxiliary magnet poles 9.

Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.

Abstract: A magnetron sputtering apparatus has a controller (10a) or selectively releasing the spread of plasma on a substrate (3) on a support (12). The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: This application discloses a multi-layer film deposition apparatus comprising; plural cathodes comprising targets respectively, a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multi-layer film is deposited by sputtering. The targets are arranged at positions where their center axes are on a circumference. The main rotation mechanism rotates the cathodes around the axis in common to the circumference. The substrate is located at a position within an area in view to the direction of the axis. The area is formed of two loci of points on the rotated targets. One of the locus is drawn by the point nearest to the axis, and the other locus is drawn by the point furthest from the axis.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: An object of the invention is to provide a method for sputtering and a device for sputtering which can make distribution of film's thickness and coverage distribution improve, in the device for sputtering constituted of at least a substrate, a substrate holder which holds the substrate, a target for forming a thin film on the substrate, a sputtering cathode in which the target is installed, a means for sputtering which makes materials of the target sputter to the substrate, which are such that sputtering is carried out by making the substrate holder rotate and making a sputter cathode unit comprising at least one sputtering cathode moves along an arc over the rotating substrate held on the substrate holder.

Abstract: A sputtering apparatus includes a sputtering chamber, a target disposed in the sputtering chamber, and a magnetic field generator for generating a rotating magnetic field at the front of the target. The magnetic field generator includes a main magnetic field-generating part that faces the back of the target and is horizontally (laterally) offset from a vertical line passing through the center of the target. A magnetic annulus of the main magnetic field-generating part forms a magnetic enclosure having openings therethrough at locations faced in the directions of the central and peripheral portions of the target. The magnetic field-generating part thus produces a magnetic field having a non-uniform distribution at the front of the target. A substrate is positioned within the sputtering chamber facing the front of the target. A metal layer is formed by sputtering atoms from the front of the target onto the substrate. The behavior of the sputtered atoms can be effectively controlled by the magnetic field.

Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.

Abstract: A method of sputtering a target, comprising steps of: (a) providing a magnetically enhanced sputtering apparatus comprising a sputtering target having a first, sputtering surface and a second, opposing surface in electrical contact with a cathode electrode of the sputtering apparatus; (b) sputtering the first surface of the target to form a first erosion track therein; (c) removing the target from the sputtering apparatus when the first erosion track reaches a predetermined depth below the first surface; (d) reinstalling the sputtering target in the sputtering apparatus such that the second surface is the sputtering surface and the first surface is the opposing surface and is in electrical contact with the cathode via an intervening backing plate comprised of at least one material selected for causing a second erosion track to be formed in the second surface of the target during sputtering therefrom which is laterally displaced from the first erosion track; and (e) sputtering the second surface of the ta

Abstract: An array of auxiliary magnets is disclosed that is positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract: A device and method has a magnetron sputter source with a multipart target (3, 4) and movable magnet system (5). By variation of the power delivery of the power supply (6), specific areas of the multipart target (3, 4) can be preferably affected, which permits setting the stoichiometry of the sputtered-off target materials on the substrate (15) to be covered and positively affecting the homogeneity of the layer structure.

Abstract: A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target. The density of the plasma next to the target is also intensified by positioning an anode grid between the target and the substrate, which provides a more planar geometry. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

Abstract: Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

Abstract: A sputtering apparatus is provided with a cathode assembly formed of a cathode unit having a moveable magnet assembly and a cooling water source therein, and a removable target assembly that includes a replaceable target unit and a removable and preferably reusable cooling jacket that seals to the rear face of the target unit and encloses a cooling cavity therebetween. Ducts are configured to automatically disconnect and reconnect the cooling cavity to the water source when the target assembly is removed from and reconnected in the cathode assembly. The target unit includes a volume of sputtering material on which is a front sputtering face, and has a recessed rim surrounding the sputtering face. The rim is configured to form a vacuum seal to the wall of a sputtering chamber and a water seal to the cooling jacket. Thereby, the magnet assembly is isolated from contact with the cooling liquid.

Abstract: A magnetron system for a sputtering target having an annular vault facing the wafer to be coated and having inner and outer sidewalls and a roof. A small magnetron is positioned over the roof. A first magnet assembly having a first magnet polarity along the target axis is positioned behind the inner sidewall. A second magnet assembly having an opposed second opposed magnetic polarity is disposed in back of the outer sidewall and has magnetic strength much greater than the first magnet assembly but its strength is asymmetrically distributed about the target axis. The second magnet assembly and the roof assembly are rotated together about the target axis. The rotating asymmetric sidewall magnet assembly may also be used with a hollow-cathode target, with or without a roof magnetron.

Abstract: A magnetron sputter reactor having a complexly shaped target with a vault arranged about a central axis facing the wafer. The vault may be right cylindrical with axially magnetized magnets disposed in back of its sidewall or be annular with preferably opposed magnets disposed in back of its two sidewalls. One or two electromagnetic coils are disposed about the processing space between the target and the wafer to either promote extraction of metal ions from the vault, to defocus the ion beam extracted from the vault and focused towards the central axis, or to compensate for a magnetic shield surrounding the reactor.

Abstract: To optimize the yield of sputtered-off material as well as the service life of the target on a magnetron source, in which simultaneously good attainable distribution values of the layer on the substrate, stable over the entire target service life, a concave sputter face 20 in a configuration with small target-substrate distance d is combined with a magnet system to form the magnetron electron trap in which the outer pole 3 of the magnetron electron trap is disposed stationarily and an eccentrically disposed inner pole 4 with a second outer pole part 11 is developed rotatable about the central source axis 6.

Abstract: A magnetic control oscillation-scanning sputter includes a sputtering target, a base and an elongated magnet. The sputtering target has a surface with a target located thereon corresponding to the base. The target being sputtered is deposited on the base. The elongated magnet is located on the rear side of the sputtering target and moved reciprocately to control the deposition of the target. The elongated magnet has two ends each which is coupled with a magnetic erasing means for reducing excessive magnetic field intensity at the two ends to avoid affecting the sputter quality.

Abstract: A DC magnetron sputter reactor capable of creating a self-ionized plasma and including a small unbalanced magnetron rotating about the back of the target. The magnetron includes an outer pole of one magnetic polarity in a closed band shape surrounding an inner pole of the opposed magnetic polarity and of lesser total magnetic intensity. The inner pole, for example, including a tubular magnet has a central, magnet free passage allowing magnetic field to pass therethrough from one side to the other of the inner pole. The outer band may be generally triangular with the base and apex composed of circular segments smoothly joined to straight sides. The pole face of the inner pole may be cantilevered away from the inner pole towards the apex of the outer pole.

Abstract: A small unbalanced magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly may pass through the target center, thus allowing full target coverage. A geared planetary mechanism may include a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plate supporting a cantilevered magnet assembly on the side of the drive plate facing the target. The erosion profile may be controlled by varying the rotation rate through the rotation cycle or by modulating the target power. A second planetary stage may be added or non-circular gears be used. Auxiliary electromagnetic coils may create a focusing magnetic field.

Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

Abstract: Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.

Abstract: An apparatus with a magnetron sputtering-coating chamber, source, target and substrate holder, includes a magnet arrangement for generating on a surface of the target, at least two tunnel-shaped magnetron magnetic fields in the form of closed loops that are substantially concentrically to, and spaced from each other. The surface consisting of a material with at least two elements of different weight. The distance between the substrate and target surface, the substrate radius, loci of erosion patterns in the surface and the radius and placement of the loops are all related to each other.

Abstract: Uniformity of a sputtered conductive barrier layer (50) or seed layer (52) across a semiconductor substrate (18, 42) is improved by incorporating a plurality of electromagnets (26) in or around the sputtering chamber (14) which can be independently powered. In other words, each individual electromagnet can be turned on or off, and/or the amount of power being supplied to each electromagnet (and thus the magnetic field generated by each electromagnet) can be varied independently. Further, the sputtering system (10) includes connection to a computer (30) that is either integral to or connected to a metrology tool (28). The metrology tool measures uniformity of a layer deposited by the sputtering system, analyzes the measurements and feeds back information to the sputtering system as to how to vary the power being supplied to the plurality of electromagnets to improve layer uniformity.