Abstract: A method of operating a cell for electrowinning of copper, the cell including a plurality of anodes and cathodes therein, the method including the steps of introducing fresh electrolyte and sparging gas to a manifold system in the cell, controlling flow of fresh electrolyte and sparging gas in the manifold system and providing outlet openings in the manifold system such that streams of fresh electrolyte and sparging gas from the outlet openings are directed relatively uniformly across the cathodes in the cell.

Abstract: A plating tool cell anode for venting unwanted gases from a fluid plating solution. In a first embodiment, the solution is introduced into a chamber, defined by the plating tool cell (10), by fluid inlet (12) and contacts the anode (50). The fluid encounters a hydrophobic membrane (14) and a hydrophilic membrane (15) spaced from the hydrophobic membrane. A driving force, such as a vacuum, is applied to the gap (16) between the membranes to remove unwanted gases therein. In a second embodiment, a single membrane is used that is both hydrophobic and hydrophilic. Preferably, the hydrophobic portion of the membrane is located at or near the perimeter of the chamber and gas to be vented is directed toward the hydrophobic portion(s).

Abstract: The present invention provides an electrolytic processing apparatus which is capable of increasing the in-plane uniformity of the film thickness of a plated film by making more uniform an electric field distribution over the entire surface to be processed of a substrate even if the substrate has a large area and controlling more uniformly the speed, over the entire surface to be processed of the substrate.

Abstract: A reactor and a method of reacting a fluid are provided. The reactor comprises a chamber having an inlet and an outlet to receive and to output a fluid, respectively. A partition with a plurality of perforations is provided in the chamber to separate the fluid into fluid segments. A conductor coupled to the chamber generates a capacitance between the conductor and the partition to vibrate the partition.

Abstract: A method and apparatus for anodizing a component. The component is placed in a container having first and second seal members that seal an annular surface of the component to be anodized. The first and second seal members, the annular surface of the component, and an inner surface of the container form a reaction chamber that holds a reaction medium therein. The reaction medium is supplied to the reaction chamber through a supply passage formed in the container. The reaction medium is drained from the reaction chamber through a drain passage formed in the container.

Abstract: The present invention includes an electrolytic plating system with an elecrolytic plating bath, means for positioning the printed circuit boards in the bath, and means to alternately generate a laminar flow of electrolyte on each side of the printed circuit boards. A preferred means to alternately generate a laminar flow of electolyte comprises a floating shield with a venturi-shaped partition and an aligned partition below the printed circuit boards, and operating a plurality of eductors below the floating shield. The means to alternately generate a laminar flow of electolyte can further comprise a transport mechanism that moves the floating shield and its partitions from side to side relative to the eductors or a mechanism to move the eductors. The plating can be also be improved by using a vibrator and a spring-mounting system that prevents vibration energy being absorbed by fixed portions of the plating system.

Abstract: A method of fabricating a semiconductor device, having a reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants; and annealing the electroplated Cu—Zn alloy thin film (30); and a semiconductor device thereby formed. The method controls the parameters of pH, temperature, and time in order to form a uniform reduced-oxygen Cu—Zn alloy thin film (30), having a controlled Zn content, for reducing electromigration on the Cu—Zn/Cu structure by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate, for improving device reliability, and for increasing corrosion resistance.

Abstract: Methods for anodizing sintered valve metal anodes for use in wet electrolytic capacitors implemented in implantable medical devices (IMDs). The methods generally include immersing a pressed valve metal anode in an anodizing electrolyte and developing an anode-electrolyte system. Subsequently, subjecting the anode-electrolyte system to a potential that is ramped up to a target voltage in a pulsed fashion and delivering voltage potential pulses to the anode. The pulses are preferably decreased in pulse width as the potential increases. The pulse width of the applied pulses is preferably defined by means of a duty, such that the applied pulse duty cycle is substantially 100% initially and declines over the formation time as the formation voltage increases to the target potential to substantially 1.0% or less. The pulses are preferably applied for a hold time following achievement of the target formation potential, as the pulse current declines toward zero current flow.

Abstract: An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a “snorkel” shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.

Abstract: A reactive solution with an amount of 250 mL is made of distilled water and LiOH·H2O (4M) melted in the distilled water. Then, the reactive solution is put in a flow-type reactor, and is flown in between an anode electrode and a cathode electrode set in the flow-type reactor at a given temperature and a given flow rate. Then, a given voltage is applied between the anode electrode and the cathode electrode with dropping an oxidizer of hydrogen peroxide (H2O2) into the reactive solution to form a lithium-cobalt oxide thin film on the anode electrode.

Abstract: The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath.

Abstract: The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.

Abstract: A plating bath which accommodates an insoluble anode and a printed-circuit board, and a copper dissolved bath which supplies copper ions are arranged. The insoluble anode is arranged as opposed to the printed-circuit board being a cathode, and a forward/reverse current is applied between both of the electrodes. Iron ions are added to a plating solution.

Abstract: A process for use in a continuous electrochemical treating line for electrochemically treating at least one surface of a continuous web moving through an electrolyte solution contained within a tank. The process includes the steps of providing at least one electrode extending across the surface of the continuous web in combination with at least one rigid non-flexible and non-conductive bumper devices also extending across the continuous web surface. The bumper devices include a contact surface positioned against the continuous web surface at spaced apart locations that prevent the continuous web from moving outside a pass-line through the electrolyte solution and arcing against the electrode. The bumper devices may comprise either a bumper strip or a conduit.

Abstract: A method for forming a plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100−a−bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.

Abstract: The present invention provides inter alia electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention are characterized in significant part by a grain refiner/stabilizer additive comprising one or more non-aromatic compounds having &pgr; electrons that can be delocalized, e.g., an &agr;,&bgr; unsaturated system or other conjugated system that contains a proximate electron-withdrawing group. Compositions of the invention provide enhanced grain refinement and increased stability in metal plating solutions, particularly in tin and tin alloy plating formulations.

Abstract: The present invention pertains to methods and apparatus for electroplating a substantially uniform layer of a metal onto a work piece having a seed layer thereon. The total current of a plating cell is distributed among a plurality of anodes in the plating cell in order to tailor the current distribution in the plating electrolyte to compensate for resistance and voltage variation across a work piece due to the seed layer. Focusing elements are used to create “virtual anodes” in proximity to the plating surface of the work piece to further control the current distribution in the electrolyte during plating.

Abstract: The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with use of a plating liquid having high throwing power and leveling properties, and which can make film thickness of a plated film substantially equal between an interconnection region and a non-interconnection region. A plating method comprises filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing concentration of the additive in the plating liquid filled into the plating space during a plating process.

Abstract: Electroplating methods and systems employing ultrasonic energy to enhance electroplating processes. The electroplating methods involve sweeping a plating surface with ultrasonic energy having an area of maximum ultrasonic energy density while simultaneously performing electroplating. The systems include movement apparatus providing relative movement between an ultrasonic energy source and a cathode while the ultrasonic energy source and the cathode are located within a plating tank.

Abstract: An anode assembly by which a solution can be supplied to a surface of a semiconductor substrate includes a housing defining an internal housing volume into which the solution can flow. A closure is provided for the internal housing volume, and the solution can be discharged from the internal housing volume through the closure towards the surface of the semiconductor substrate. A filter divides the internal housing volume into a first chamber and a second chamber located between the first chamber and the closure. During supply of the solution to the surface, a flow of the solution into the second chamber occurs at a higher rate than a flow of the solution into the first chamber, and the flows are blended in the second chamber.

Abstract: A method for multi-layer electrodeposition in a single bath is also provided. A substrate is immersed in a bath. An electrodeposition operation is initiated for depositing a first layer of material on the substrate. The electrodeposition operation includes agitating the bath and applying current pulses. The electrodeposition operation is later altered for depositing a second layer of material on the first layer, where the second layer is of a different composition than the first layer. In the altered mode, the current density is changed for altering a composition of material deposited on the substrate, the duration and/or frequency of the current pulses are altered, and the bath is agitated at a different rate of agitation.

Abstract: A metal layer uniform in thickness is formed by electroless plating on both inner and outer surfaces of a corrugated tube to thereby produce a shield-plated corrugated tube which has a satisfactory flexibility as well as a superior electromagnetically shielding effect. Specifically, in the corrugated tube of resin, at least the size and shape of groove portions inside the tube for forming the convex-concave portions of the tube wall are set to satisfy the condition of 1.5<D/W<1.6 where D represents the depth of each groove portion in the radial direction of the tube and W represents the width of each groove portion in the axial direction of the tube. The metal layers are formed on the inner and outer surfaces of the corrugated tube by electroless plating.

Abstract: An apparatus and method for electro-chemically depositing a uniform metal layer onto a substrate is provided. In one aspect, the apparatus includes a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. In another aspect, the apparatus further includes a dual catch-cup system having an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system.

Abstract: A method and a device are described for producing a galvanic layer having a defined spatial extent on an electrically conductive substrate surface having any shaped contour at all. In this context, an electrolyte jet from a nozzle is applied to the substrate, and a current flows between the nozzle and the substrate surface essentially via the electrolyte jet. The device is provided with a pump for delivering an electrolyte from an electrolyte reservoir to the nozzle and for producing an electrolyte jet directed at the substrate surface. Moreover, the device has a reactor in which are arranged the substrate to be coated, as well as the nozzle. The substrate and the nozzle are connected to a direct current source, and a configuration of the substrate and of the nozzle in the reactor is variable during the coating process.

Abstract: An electro-chemical deposition apparatus and method are generally provided. In one embodiment of the invention, an electro-chemical deposition apparatus includes a housing having a substrate support disposed therein and adapted to rotate a substrate. One or more electrical contact elements are disposed on the substrate support. A drive system is disposed proximate the housing. The drive system is magnetically coupled to and adapted to rotate the substrate support. In another embodiment, a method of plating a substrate includes the steps of covering a substrate supported within a housing with electrolyte, and displacing a portion of the electrolyte from the housing prior to electrically biasing the substrate, and electrically biasing the substrate.

Abstract: An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by, baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

Abstract: According to aspect of the invention, a plating system is provided which includes a tank for containing a plating solution, a shaft extending into the tank, and a substrate holder mounted to the shaft. The shaft and the tank are rotatable relative to one another. The substrate holder is configured to support a substrate in position so that at least a first face of the substrate is exposed to the plating solution in the tank.

Abstract: A process and apparatus are provided for electroplating a film onto a substrate having a top side including a plating surface includes the following steps. Provide a plating tank with an electroplating bath. Provide an anode in the bath. Place a substrate having a plating surface to be electroplated into the electroplating bath connecting surfaces to be plated to a first cathode. Support a second cathode including a portion thereof with openings therethrough extending across the plating surface of the substrate and positioned between the substrate and the anode. Connect power to provide a negative voltage to the first cathode and provide a negative voltage to the second cathode, and provide a positive voltage to the anode.

Abstract: The present invention is directed to an improved electroplating method, chemistry, and apparatus for selectively depositing tin/lead solder bumps and other structures at a high deposition rate pursuant to manufacturing a microelectronic device from a workpiece, such as a semiconductor wafer. An apparatus for plating solder on a microelectronic workpiece in accordance with one aspect of the present invention comprises a reactor chamber containing an electroplating solution having free ions of tin and lead for plating onto the workpiece. A chemical delivery system is used to deliver the electroplating solution to the reactor chamber at a high flow rate. A workpiece support is used that includes a contact assembly for providing electroplating power to a surface at a side of the workpiece that is to be plated. The contact contacts the workpiece at a large plurality of discrete contact points that isolated from exposure to the electroplating solution.

Abstract: A method and apparatus for regulating fluid flows, such as flows of electrochemical processing fluids for processing microelectronic workpieces. The apparatus includes a valve body having an entrance port, an exit port, and a flow passage between the entrance and exit ports through which a first fluid flows. The valve body further includes a pressure chamber coupleable to a second fluid source and at least partially isolated from the flow passage. A regulator, movably disposed in the flow passage to change a flow area of the flow passage, has a first surface with a first projected area and a second surface with a second, larger, projected area, both of which are operatively coupled to the first fluid. A third surface of the regulator is operatively coupled to the second fluid. The regulator can adjust its position to maintain a constant or nearly constant first fluid flow rate as the fluid pressure at the entrance port changes.

Abstract: The invention relates to a method for producing an ultraphobic surface on aluminium as the supporting material and to the resulting surface and its use. According to said method, the surface of an aluminium support is anodized, especially by anodic oxidation, and/or electrochemically pickled in an acid solution with an alternating voltage, treated in hot water or water vapor at a temperature of 50 to 100° C., optionally coated with an adhesion promoter layer and then provided with a hydrophobic or especially oleophobic coating.

Abstract: Disclosed is a method of electroplating substrate such that small recessed features are completely filled with minimum thickness of the deposited metal over fields.

Abstract: An electrode assembly arrangement for improving an electrodeposition process and method for using the same the electrode assembly arrangement including a first electrode assembly and a second electrode assembly positioned to carry a metal containing electrolyte from the first electrode assembly to the second electrode assembly for deposition of the metal upon applying an electrical potential therebetween; at least one additional electrode assembly including a means for selectively applying an electrical potential thereto the at least one additional electrode assembly positioned to attract an electrolyte flow upon applying an electrical potential between the at least one additional electrode assembly and the second electrode assembly.

Abstract: The present process for electrodepositing a zinc oxide film comprises the steps of immersing a substrate and an opposing electrode in an electrodeposition bath which contains zinc nitrate and is kept heated, and forming the zinc oxide film on the substrate by passing a current between the substrate and the opposing electrode, wherein the process further includes a step of trapping the particles of zinc oxide precipitated in the electrodeposition bath by circulating or stirring the bath before the formation of the zinc oxide film, whereby the present process can prevent the generated zinc oxide powder from depositing on the surfaces of the substrate and the zinc oxide film formed by electrodeposition when restarting or starting the formation of a zinc oxide film by the electrodeposition using an electrodeposition apparatus, and hence the formation of a uniform zinc oxide film free from defects.

Abstract: A method and associated apparatus of electroplating an object and filling small features. The method comprises immersing the plating surface into an electrolyte solution and mechanically enhancing the concentration of metal ions in the electrolyte solution in the features. In one embodiment, the mechanical enhancement comprises mechanically vibrating the plating surface. In another embodiment, the mechanical enhancement comprises mechanically vibrating the electrolyte solution. In a further embodiment, the mechanical enhancement comprises increasing the pressure applied to the electrolyte solution.

Abstract: Methods for anodizing sintered valve metal anodes for use in wet electrolytic capacitors implemented in implantable medical devices (IMDs). The methods generally include immersing a pressed valve metal anode in an anodizing electrolyte and developing an anode-electrolyte system. Subsequently, subjecting the anode-electrolyte system to a potential that is ramped up to a target voltage in a pulsed fashion and delivering voltage potential pulses to the anode. The pulses are preferably decreased in pulse width as the potential increases. The pulse width of the applied pulses is preferably defined by means of a duty, such that the applied pulse duty cycle is substantially 100% initially and declines over the formation time as the formation voltage increases to the target potential to substantially 1.0% or less. The pulses are preferably applied for a hold time following achievement of the target formation potential, as the pulse current declines toward zero current flow.

Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.

Abstract: A process for cleaning an electrically conducting surface (3) by arranging for the surface to form the cathode of an electrolytic cell in which the anode (1) is maintained at a DC voltage in excess of 30V and an electrical arc discharge (electro-plasma) is established at the surface of the workpiece by suitable adjustment of the operating parameters, characterized in that the working gap between the anode and the cathode is filled with an electrically conductive medium consisting of a foam (9) comprising a gas/vapor phase and a liquid phase. The process can be adapted for simultaneously coating the metal surface by including ions of the species required to form the coating in the electrically conductive medium.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the central apertures of the base section of the anode cup and through the membrane allowing plating solution to be directed at the center of a wafer being electroplated.

Abstract: A reactive solution with an amount of 250 mL is made of distilled water and LiOH·H2O (4M) melted in the distilled water. Then, the reactive solution is put in a flow-type reactor, and is flown in between an anode electrode and a cathode electrode set in the flow-type reactor at a given temperature and a given flow rate. Then, a given voltage is applied between the anode electrode and the cathode electrode with dropping an oxidizer of hydrogen peroxide (H2O2) into the reactive solution to form a lithium-cobalt oxide thin film on the anode electrode.

Abstract: A method for depositing a film of an advanced material on a surface of an article is disclosed. The method comprises placing the article within a bath having a pair of spaced electrodes one of which is formed by said article and an electrolyte containing a source of the material to be deposited. A stream of bubbles is generated within the electrolyte adjacent to the cathode. There are a number of techniques for generating the stream of bubbles, e.g. electrolysis, ebullition, cavitation, entrainment and sparging. The method also includes applying a potential difference across the cathode and anode such that a glow discharge is formed in the bubble region so as form a plasma of ionised gaseous molecules within the bubble. This highly energised gaseous plasma then acts to deposit a film of material on the surface of the article. The method may be carried out at atmospheric pressure and does not require a vacuum apparatus. The body of electrolyte liquid acts as a source of containment for the plasma.

Abstract: Electroplating methods and systems employing ultrasonic energy to enhance electroplating processes. The electroplating methods involve sweeping a plating surface with ultrasonic energy having an area of maximum ultrasonic energy density while simultaneously performing electroplating. The systems include movement apparatus providing relative movement between an ultrasonic energy source and a cathode while the ultrasonic energy source and the cathode are located within a plating tank.

Abstract: A system for electroplating integrated circuit wafers includes an electroplating solution containment chamber having a first end that is capable of supporting an integrated circuit wafer so that a surface of the wafer faces an internal volume of the chamber, and a second end opposing the first end across the internal volume. The system further includes a liquid directing element at the second end. The liquid directing element includes a plurality of channels having divergent axes so as to direct a helical flow of electroplating solution toward the surface of the integrated circuit wafer when the wafer is present and the liquid directing element is attached to a source of pressurized electroplating solution.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post-treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A method and apparatus for electroplating at least part of the surface area of an article with a metal coating is described, the method including the steps of: placing the article in a vessel, the vessel being provided with machinery to allow access of fluid to an interior volume; the article being contained in the interior volume and, machinery to allow egress of the fluid; providing the vessel with anode and cathode connections such as to enable the article to become cathodic with regard to an anode extending into the interior volume; providing machinery to cause at least two different fluids including at least one plating electrolyte to be introduced into the vessel in sequence, flow through the interior volume and to exit therefrom for a sufficient time to allow a required thickness of the metal coating to be deposited.

Abstract: An anode assembly by which a solution can be supplied to a surface of a semiconductor substrate includes a housing defining an internal housing volume into which the solution can flow. A closure is provided for the internal housing volume, and the solution can be discharged from the internal housing volume through the closure towards the surface of the semiconductor substrate. A filter divides the internal housing volume into a first chamber and a second chamber located between the first chamber and the closure. During supply of the solution to the surface, a flow of the solution into the second chamber occurs at a higher rate than a flow of the solution into the first chamber, and the flows are blended in the second chamber.

Abstract: An apparatus and method for electro-chemically depositing a uniform metal layer onto a substrate is provided. In one aspect, the apparatus includes a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplying an electroplating solution fluidly connecting the anode and the substrate plating surface. In another aspect, the apparatus further includes a dual catch-cup system having an electroplating solution catch-cup and a rinse catch-cup. The dual catch-cup system provides separation of the electroplating solution and the rinse solutions during processing and provides re-circulating systems for the different solutions of the electroplating system.

Abstract: The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath.

Abstract: By means of a pump for supplying a plating fluid to a closed plating cup, at least either the pressure or flow rate of the plating fluid circulating within the closed plating cup is cyclically changed. Alternatively, the direction of circulation of the plating fluid circulating within the closed plating cup maybe also changed cyclically. Under a method of manufacturing a semiconductor device or a method of manufacturing a printed board, a semiconductor wafer or a printed board are disposed in the closed plating cup such that blind holes formed by closing openings on one end of via holes or openings on one end of through holes are brought into contact with a circulating plating fluid, thereby eliminating air bubbles that would remain. As a result, a manufacturing yield or performance of a product is improved.