Abstract: Systems and methods for automated electroplating are disclosed. An electroplating system includes a first chamber configured to receive one or more parts. The first chamber includes a vessel extending from a first end to a second end, a first cap proximate to the first end a first cathode contact coupled to the first end, a second cathode contact coupled to the second end, and a plurality of anodes formed on an inner surface of the vessel. The electroplating system further includes at least one reservoir and a first conduit and a second conduit each coupled between the at least one reservoir and the first chamber. The first conduit may be configured to transfer fluid from the first reservoir to the first chamber and the second conduit may be configured to transfer fluid from the first chamber to the at least one reservoir.

Abstract: Disclosed is a copper foil including a copper layer having a matte surface and a shiny surface, and an anticorrosive layer disposed on the copper layer, wherein the copper foil has a residual stress of 0.5 to 25 Mpa, based on absolute value, and the copper layer has a plurality of crystal planes, wherein a ratio [TCR (220)] of a texture coefficient (TC) of (220) crystal plane of the copper layer to a total of texture coefficients (TC) of (111), (200), (220) and (311) crystal planes of the copper layer is 5 to 30%.

Abstract: The invention relates to an anode for electrowinning process in an electrolytic cell, and the method of operation thereof, having cell walls and a cell bottom for holding an electrolyte and electrolyte feeding means, which anode comprises a hanger bar for supporting the anode, a conducting rod for distributing the current, an anode body having at least partly conductive structure. The anode body allows electrolyte penetration and is at least partly covered by electrocatalytic coating, when in connection with the anode there is arranged a non-conductive element, which is restricted to the conductive structure of the anode body, at least from its one side, and which non-conductive element is arranged at a distance A from the electrolyte surface level, when the non-conductive element provides a means for attaching the anode to the cell.

Abstract: Provided is an anode for electroplating which uses an aqueous solution as an electrolytic solution, and the anode which is low in potential when compared with a conventional anode, able to decrease an electrolytic voltage and an electric energy consumption rate and may also be used as an anode for electroplating various types of metals, and which is low in cost. Also provided is a method for electroplating which uses an aqueous solution as an electrolytic solution, in which the anode is low in potential and electrolytic voltage, thereby making it possible to decrease the electric energy consumption rate. The anode for electroplating of the present invention is an anode for electroplating which uses an aqueous solution as an electrolytic solution, in which a catalytic layer containing amorphous ruthenium oxide and amorphous tantalum oxide is formed on a conductive substrate.

Abstract: A carbon based material produced from the consolidation of amorphous carbon by elevated temperature compression. The material having unique chemical and physical characteristics that lend themselves to a broad range of applications such as in electrical, electrochemical and structural fields.

Abstract: The subject of the present invention is a method of the electrolytic isolation of arsenic from industrial electrolytes including waste electrolytes used in the electrorafination of copper after its prior decopperisation.

Abstract: The present invention relates to an anode system for conventional electrolysis cells, a process for the production thereof and its use for the deposition of electrolytic coatings. The anode system is characterized in that the anode (2) is in direct contact with a membrane (3) which completely separates the anode space from the cathode space. This anode system is therefore a direct-contact membrane anode.

Abstract: Provided are a highly pure copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the highly pure copper anode. The highly pure copper anode obtains a crystal grain boundary structure having a special grain boundary ratio L?N/LN of 0.35 or more. LN is a unit total special grain boundary length. L?N is a unit total special boundary length. By having the configuration described above, plating defect can be reduced by suppressing the occurrence of the particles, such as the slime or the like, which are generated on the anode side in the plating bath.

Abstract: An apparatus for electroplating a rotogravure cylinder out of a plating solution is disclosed. The apparatus includes a plating tank adapted to support the cylinder and to contain a plating solution so that the cylinder is at least partially disposed into the plating solution. The apparatus also includes a non-dissolvable anode at least partially disposed within the plating solution. A current source is electrically connected to the non-dissolvable anode and to the cylinder. An ultrasonic system may be provided to introduce wave energy into the plating solution includes at least one transducer element mountable within the tank and a power generator adapted to provide electrical energy to the transducer element. A holding tank having a circulation pump, a mixing system and heating and cooling elements for the plating solution may be provided.

Abstract: Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.

Abstract: A current-leveling electrode for improving electroplating and electrochemical polishing uniformity in the electrochemical plating or electropolishing of metals on a substrate is disclosed. The current-leveling electrode includes a base electrode and at least one sub-electrode carried by the base electrode. The at least one sub-electrode has a width which is less than a width of the base electrode to impart a generally tapered, stepped or convex configuration to the current-leveling electrode.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: A work piece is electroplated or electroplanarized using an azimuthally asymmetric electrode. The azimuthally asymmetric electrode is rotated with respect to the work piece (i.e., either or both of the work piece and the electrode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece. In some embodiments, the total current is distributed among a plurality of electrodes in a reaction cell in order to tailor the current distribution in the electrolyte over time. Focusing elements may be used to create “virtual electrode” in proximity to the surface of the work piece to further control the current distribution in the electrolyte during plating or planarization.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: Embodiments of the invention are directed to methods of electroplating copper onto at least one surface of a substrate in which more uniform electrical double layers are formed adjacent to the at least one surface being electroplated (i.e., the cathode) and an anode of an electrochemical cell, respectively. In one embodiment, the electroplated copper may be substantially-free of dendrites, exhibit a high-degree of (111) crystallographic texture, and/or be electroplated at a high-deposition rate (e.g., about 6 ?m per minute or more) by electroplating the copper under conditions in which a ratio of a cathode current density at the at least one surface to an anode current density at an anode is at least about 20. In another embodiment, a porous anodic film may be formed on a consumable copper anode using a long conditioning process that promotes forming a more uniform electrical double layer adjacent to the anode.

Abstract: The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits. According to the invention, this composition comprises, in solution in a solvent: a source of copper ions, in a concentration of between 0.4 and 40 mM; at least one copper complexing agent chosen from the group comprising primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen heterocycles and oximes; the copper/complexing agent(s) molar ratio being between 0.1 and 2.5, preferably between 0.3 and 1.3; and the pH of the said composition being less than 7, preferably between 3.5 and 6.5.

Abstract: An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 ?m (or more) to 20,000 ?m in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Abstract: An electroplating apparatus includes a reactor vessel having a segmented anode array positioned therein for effecting electroplating of an associated workpiece such as a semiconductor wafer. The anode array includes a plurality of ring-like anode segments which are preferably positioned in concentric, coplanar relationship with each other. The anode segments can be independently operated to create varying electrical potentials with the associated workpiece to promote uniform deposition of electroplated metal on the surface of the workpiece.

Abstract: A process for electroplating of metal utilizing a valve metal electrode substrate containing multiple coating layers is disclosed. A top coating layer of a valve metal oxide is applied over a first coating layer of an electrochemically active coating. The electrode may find use in an electroplating system containing organic substituents in which the consumption of the organic substituent is significantly decreased or in systems where it is desirable to suppress the oxidation of a species in an electrochemical cell.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 ?m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 ?m when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

Abstract: A method for forming a copper-Invar-copper (CIC) laminate having an intermetallic layer of negligible thickness, and a structure associated with the CIC laminate. Starting with a block of Invar, the method includes a cleaning step followed by an electroplating step. The cleaning step electrochemically cleans the block of Invar with an acid solution while applying a negative voltage bias to the block of Invar. The electroplating step electroplates copper on the block of Invar, resulting in the block of Invar being sandwiched between two layers of copper, such that an intermetallic layer of zero or negligible thickness is disposed between the block of Invar and each layer of copper. Each layer of copper has a uniform thickness. If the starting block of Invar contains a through hole, then the electroplating step will plate a ring of copper on the through hole wall.

Abstract: A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. The current of a plating cell is provided from an azimuthally asymmetric anode, which is rotated with respect to the work piece (i.e., either or both of the work piece and the anode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece, whereby peripheral regions of the work piece see less current than central regions over the period of rotation. In some embodiments, the total current is distributed among a plurality of anodes in the plating cell in order to tailor the current distribution in the plating electrolyte over time. Focusing elements may be used to create “virtual anodes” in proximity to the plating surface of the work piece to further control the current distribution in the electrolyte during plating.

Abstract: In order to regulate the metal ion concentration in an electrolyte fluid serving to electrolytically deposit metal and additionally containing substances of an electrochemically reversible redox system, it has been known in the art to conduct at least one portion of the electrolyte fluid through one auxiliary cell provided with one insoluble auxiliary anode and at least one auxiliary cathode, a current being conducted between them by applying a voltage. Accordingly, excess quantities of the oxidized substances of the redox system are reduced at the auxiliary cathode, the formation of ions of the metal to be deposited being reduced as a result thereof. Starting from this prior art, the present invention relates to using pieces of the metal to be deposited as an auxiliary cathode.

Abstract: Embodiments of the invention generally provide an electrochemical plating cell having an electrolyte container assembly configured to hold a plating solution therein, a head assembly positioned above the electrolyte container, the head assembly being configured to support a substrate during an electrochemical plating process, and an anode assembly positioned in a lower portion of the electrolyte container. The anode assembly generally includes a copper member having a substantially planar upper surface, at least one groove formed into the substantially planar upper surface, each of the at least one grooves originating in a central portion of the substantially planar anode surface and terminating at a position proximate a perimeter of the substantially planar upper surface, and at least one fluid outlet positioned at a perimeter of the substantially planar upper anode surface.

Abstract: Embodiments of the invention generally provide an electrochemical plating cell having an electrolyte container assembly configured to hold a plating solution therein, a head assembly positioned above the electrolyte container, the head assembly being configured to support a substrate during an electrochemical plating process, and an anode assembly positioned in a lower portion of the electrolyte container. The anode assembly generally includes a copper member having a substantially planar upper surface, at least one groove formed into the substantially planar upper surface, each of the at least one grooves originating in a central portion of the substantially planar anode surface and terminating at a position proximate a perimeter of the substantially planar upper surface, and at least one fluid outlet positioned at a perimeter of the substantially planar upper anode surface.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to the electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.

Abstract: A method for in-situ cleaning an electrodeposition surface following an electroplating process including providing a first electrode assembly and a second electrode assembly; applying a first current density across the first electrode assembly and the second electrode assembly for carrying out the electrodeposition process; carrying out the electrodeposition process to electrodeposit a metal onto an electrodeposition surface of the second electrode assembly; and, applying a second current density having a second polarity reversed with reference to the first polarity across the first electrode assembly and the second electrode assembly the second current density having a relatively lower current density compared to the first current density.

Abstract: A plating bath which accommodates an insoluble anode and a printed-circuit board, and a copper dissolved bath which supplies copper ions are arranged. The insoluble anode is arranged as opposed to the printed-circuit board being a cathode, and a forward/reverse current is applied between both of the electrodes. Iron ions are added to a plating solution.

Abstract: The present invention pertains to methods and apparatus for electroplating a substantially uniform layer of a metal onto a work piece having a seed layer thereon. The total current of a plating cell is distributed among a plurality of anodes in the plating cell in order to tailor the current distribution in the plating electrolyte to compensate for resistance and voltage variation across a work piece due to the seed layer. Focusing elements are used to create “virtual anodes” in proximity to the plating surface of the work piece to further control the current distribution in the electrolyte during plating.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 &mgr;m (or more) to 20000 &mgr;m in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Abstract: A method of forming a copper layer with increased electromigration resistance. A doped copper layer is formed by controlling the incorporation of a non-metallic dopant during copper electroplating.

Abstract: A method for improving an electrodeposited metal film uniformity and preventing metal deposition and peeling of deposited metal from an electrode during an electrodeposition and electropolishing process including providing a first anode electrode assembly and a semiconductor wafer plating surface disposed in an electrolyte bath including a plating metal for deposition onto the semiconductor wafer plating surface; providing at least one additional anode electrode assembly including the plating metal disposed peripheral to the first anode electrode assembly for selectively applying the cathodic electrical potential during an electropolishing process; and, periodically alternating between an electrodeposition process and electropolishing process with respect to the semiconductor wafer plating surface such that the plating metal is preferentially plated onto the at least one additional electrode assembly.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 &mgr;m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of said phosphorous copper anode 5 to 1500 &mgr;m when the anode current density during electrolysis is less than 3 A/dm2. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: A copper anode is described for use in electroplating semiconductor interconnects, where said anode has a preferred grain size or crystallographic orientation and a preferred chemical composition. The microstructure of the anode may be of two types (1) grains smaller than 100 microns in any dimension or (2) large columnar grains aligned perpendicularly to the anode corroding surface. Copper cathodes of not less than 99.99 weight percent of copper are alloyed to achieve an anode with a phosphor content of 0.045 to 0.060 weight percent.

Abstract: Local electrochemical deplating of alignment mark regions of semiconductor wafers is disclosed. A tank holds an electrolytic solution. A primary cathode submersed within the solution is at least partially insulated therefrom. An electrochemically metal plated semiconductor wafer submersed within the solution acts as an anode, and has alignment mark regions. Extension cathodes submersed within the electrolytic solution are each at least partially insulated, except for a part of a first end and a second end thereof. The first end part is closely positioned over a corresponding alignment mark region, whereas the second end is situated on a corresponding exposed part of the primary cathode. A power source has its positive terminal operatively coupled to the primary cathode and its negative terminal operatively coupled to the wafer. Current from the power source electrochemically deplates the metal substantially from the alignment mark regions, substantially exposing the alignment marks within these regions.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: The present invention relates to a process for electrolytically producing metal foil which is diminished in pinhole defects and has a uniform thickness. The metal foil is produced by passing an electric current between a cylindrical cathode immersed in an electrolytic solution and an anode opposed to the cathode, continuously electrodepositing a metal layer on the surface of the cathode while rotating the cathode and thereafter peeling the metal layer off. An auxiliary anode capable of adjusting the current density when electrodeposition is started is disposed at a position downstream from the anode with respect to the direction of flow of the electrolytic solution. The auxiliary anode is an electrode having a coating layer comprising an electrode active substance and formed over an electrically conductive metal substrate, with an intermediate layer of tantalum or a tantalum alloy formed between the coating layer and the substrate.

Abstract: An anode is configured to be used within a metal film plating apparatus. The anode has a substantially planar electric field generating portion and an electrolyte solution chemical reaction portion. The planar electric field generating portion is coated with an inert material that is impervious to the electrolyte solution. In one embodiment, the anode is formed as a perforated anode. In one aspect, the electric field generating portion is formed contiguous with the electrolyte solution chemical reaction portion. In another aspects, the planar electric field generating portion is formed as a distinct member from the electrolyte solution chemical reaction portion.

Abstract: A method for forming a copper-Invar-copper (CIC) laminate having an intermetallic layer of negligible thickness, and a structure associated with the CIC laminate. Starting with a block of Invar, the method includes a cleaning step followed by an electroplating step. The cleaning step electrochemically cleans the block of Invar with an acid solution while applying a negative voltage bias to the block of Invar. The electroplating step electroplates copper on the block of Invar, resulting in the block of Invar being sandwiched between two layers of copper, such that an intermetallic layer of zero or negligible thickness is disposed between the block of Invar and each layer of copper. Each layer of copper has a uniform thickness. If the starting block of Invar contains a through hole, then the electroplating step will plate a ring of copper on the through hole wall.

Abstract: An electrolytic cathode consists of a solid copper hanger bar and a stainless-steel mother plate attached to a receiving groove in the underside of the hanger bar. In the preferred embodiment of the invention, the entire length of connection is welded, thereby establishing a large boundary surface for good electrical conductance. The solid hanger bar further includes a cladding of stainless steel wrapped over the copper bar and the upper portion of the mother plate, leaving only the ends of the copper bar exposed for electrical connection with conventional bus-bars. The lower edges of the cover are attached to the mother plate by a steel-to-steel weld that produces a strong and durable connection. The lateral edges of the cover are also connected to the copper bar by a conventional copper weld that completely seals the cover over the copper bar, thereby preventing contamination from the electrolytic solution. The cover is then welded to the mother plate and sealed around the copper bar.

Abstract: Disclosed herein are electrodes, sensors, and methods for making and using the same. In one embodiment, the sensor comprises: a co-fired sensing electrode comprising the reaction product of about 50 wt % to about 95 wt % noble metal, about 0.5 wt % to about 15.0 wt % yttria-stabilized zirconia, and about 1 wt % to about 6 wt % yttria, based upon a total combined weight of the noble metal, yttria-stabilized zirconia, and yttria, a reference electrode, and a co-fired electrolyte disposed between and in ionic communication with the co-fired sensing electrode and the reference electrode.

Abstract: A process is provided for electrolytically depositing copper onto a workpiece. The process includes the steps of providing a copper generation vessel and generating a copper plating solution from solid-state copper in the vessel. The plating solution so generated is continuously circulated between the copper generation vessel and a plating vessel. An insoluble, dimensionally stable anode is provided in the plating vessel in contact with the plating solution. The workpiece is immersed in the plating solution in the plating vessel in close proximity to the anode. Electric current is passed through the plating solution between the anode and the workpiece to be plated so that the workpiece acts as a cathode in an electrolytic circuit and copper ions are electrolytically deposited on the workpiece. The process ensures that the workpiece is positioned relative to the anode so that all surfaces to be plated are exposed to the anode surface.

Abstract: A method of producing copper foil, and more particularly, in an electrochemical cell containing organic substituents, is provided herein. The metal may be deposited on an electrode that comprises an electrode base having at least one undercoating layer of an active coating and at least one topcoating layer of no significant activity. The copper electrodeposition cell can operate without an adverse affect on electrode potential.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to said electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: A process for copper-plating a wafer which comprises electroplating a semiconductor wafer with an electrode comprising a corrosion-resistant metal substrate and a coat mainly composed of iridium oxide provided on the substrate as an anode and the wafer as a cathode in a solution containing copper ion. The anode is preferably an insoluble electrode comprising a corrosion-resistant metal substrate and a coat mainly composed of iridium oxide and further containing a metal or metal oxide selected from platinum, tantalum, titanium, niobium and oxides of these metals provided on the substrate. A neutral membrane or ion exchange membrane may be interposed between the anode and the cathode as a separating membrane.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.