Abstract: The present invention relates to a electroplating composition and an electroplating method using the same.

Abstract: This invention relates to a method of forming a copper film on a Mo/SUS flexible substrate, which enables the copper film to be uniformly formed on the Mo/SUS flexible substrate in a short period of time by applying current and in which the copper film becomes thicker in proportion to an increase in a concentration of a copper precursor aqueous solution or in a current density.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: The acid copper sulfate solutions used for electroplating copper circuitry in trenches and vias in IC dielectric material in the Damascene process are replaced with a type of plating system based on the use of highly complexing anions (e.g., pyrophosphate, cyanide, sulfamate, etc.) to provide an inherently high overvoltage that effectively suppresses runaway copper deposition. Such systems, requiring only one easily-controlled organic additive species to provide outstanding leveling, are more efficacous for bottom-up filling of Damascene trenches and vias than acid copper sulfate baths, which require a minimum of two organic additive species. The highly complexed baths produce fine-grained copper deposits that are typically much harder than large-grained acid sulfate copper deposits, and which exhibit stable mechanical properties that do not change with time, thereby minimizing “dishing” and giving more consistent CMP results.

Abstract: A composite for use in forming a multi-layer printed circuit board, comprised of an INVAR® sheet having a thickness of between 0.5 mil and 5 mil; and a layer of electrodeposited copper on at least one side thereof. The copper has a thickness of between 1&mgr; and 50&mgr;, wherein the composite has a thermal coefficient of expansion (TCE) of about 2.8 to 6.0 ppm at temperatures between 0° F. and 200° F.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to said electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: The present invention provides inter alia copper electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention contain an increased brightener concentration that can provide effective copper plate on difficult-to-plate aperture walls, including high aspect ratio, small diameter microvias.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: This invention provides a composite foil comprising an aluminum carrier layer and an ultra-thin copper foil having a protective layer disposed between them comprising a porous copper layer and an interpenetrating zinc layer. A process for producing such composite foils comprises the steps of preparing the surface of the aluminum carrier, electrodepositing a porous copper layer on the aluminum carrier layer followed by electrodepositing a zinc layer, and then electrodepositing two layers of copper to form the ultra-thin copper foil. The composite foil provides a uniform bond strength between the aluminum carrier and the protective layer which is adequate to prevent separation of the carrier and ultra-thin copper foil during handling and lamination, but which is significantly lower than the peel strength of a copper/substrate bond, so that the carrier can easily be removed after lamination of the composite foil to an insulating substrate.

Abstract: Process for continuous manufacture of an electrical conductor consisting of an at least partially aluminium-based central core coated by continuous electrodeposition with at least one metal layer, including pretreatment of the surface of the core, characterized in that the following are subsequently performed successively on the core,a) an electrochemical deposition of copper in an aqueous bath maintained at a temperature of between 20.degree. C. and 60.degree. C., containing KCN, CuCN, K.sub.2 CO.sub.3 and KNaC.sub.4 H.sub.4 O.sub.6 with a current intensity of between 1 and 10 A/dm.sup.2 ;b) rinsing at ambient temperature;c) an electrochemical deposition of tin in an aqueous bath maintained at a temperature of between 20.degree. C. and 60.degree. C., containing essentially tin dissolved in methanesulphonic acid and, optionally, additives, with a current intensity of between 1 and 100 A/dm.sup.2 ;d) rinsing with water at 60.degree. C.

Abstract: A particular anode comprising an electrochemically active material selected from the group consisting of the oxides of the elements tin, germanium and lead and mixtures comprising at least one of the respective oxides of such elements is useful in an electrochemical cell for the direct production of essentially dry halogen gas from essentially anhydrous halogen halide, or in a process for such production of essentially dry halogen gas. This cell or process may be used to produce halogen gas such as chlorine, bromine, fluorine and iodine from a respective anhydrous hydrogen halide, such as hydrogen chloride, hydrogen bromide, hydrogen fluoride and hydrogen iodide.

Abstract: A particular anode comprising an electrochemically active material selected from the group .[.comprising.]. .Iadd.consisting of .Iaddend.the oxides of the elements tin, germanium and lead and mixtures comprising at least one of the respective oxides of such elements is useful in an electrochemical cell for the direct production of essentially dry halogen gas from essentially anhydrous halogen halide, or in a process for such production of essentially dry halogen gas. This cell or process may be used to produce halogen gas such as chlorine, bromine, fluorine and iodine from a respective anhydrous hydrogen halide, such as hydrogen chloride, hydrogen bromide, hydrogen fluoride and hydrogen iodide.