Abstract: Reaction products of halogenated pyrimidines and nucleophilic linker units are included in metal electroplating baths to provide good throwing power. The electroplating baths can be used to plate metal, such as copper, tin and alloys thereof on printed circuit boards and semiconductors and fill through-holes and vias.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to said electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: An electrolytic process for producing copper foil having a low profile surface exhibiting a high peel strength when bonded to a polymeric substrate, which process comprises: (a) preparing an electrolyte comprising a copper sulfate-sulfuric acid solution, containing as addition agents, a low molecular weight water-soluble cellulose ether, a low molecular weight water-soluble polyalkylene glycol ether, a low molecular weight water-soluble polyethylene imine and a water-soluble sulfonated organic sulfur compound; (b) passing an electric current through the electrolyte from a primary anode to a cathode spaced from the primary anode in a first electrodeposition zone under first mass transfer conditions including a first current density to electrodeposit on the cathode a base copper foil having a fine-grained microstructure and a matte surface having micropeaks with a height not greater than about 150 microinches; (c) passing the base foil and electrolyte from the first electrodeposition zone to a second electrodep