Abstract: An apparatus for micromachining a semiconductor material from opposing sides through synchronous coordination of laser and electrochemistry includes an optical path system, a stable low-pressure jet generation system, and an electrolytic machining system. The optical path system includes a laser generator, a beam expander, a reflector, a galvanometer, and a lens. The electrolytic machining system includes a direct-current pulsed power supply, an adjustable cathode fixture, an electrolyte tank, a current probe, and an oscilloscope. The stable low-pressure jet generation system provides an electrolyte flow into a metal needle. The electrolyte flow forms an electrolyte layer between a semiconductor material and a cathode copper plate, such that the cathode and the anode are in electrical contact with each other. In a method employing the apparatus, a laser beam is irradiated onto the semiconductor material to form a local high-temperature region, which leads to a localized increase in electrical conductivity.

Abstract: A liquid ejection head includes a supply manifold, a return manifold, and individual channels each connected, at its upstream end, to the supply manifold and, at its downstream end, to the return manifold. Each of the individual channels communicates with a corresponding one of nozzles arranged in an array on a nozzle surface. The supply manifold and the return manifold extend in an extending direction along the nozzle array. The return manifold includes a lower portion located below the supply manifold to overlap the supply manifold in plan view orthogonal to the nozzle surface, and a standing portion located at at least one of opposite ends of the lower portion in the extending direction to be outside the supply manifold in plan view. The standing portion has a height to cover at least a portion of an end of the supply manifold when viewed in the extending direction.

Abstract: An electrolyte (EL) for the electrolytic polishing of a metallic substrate includes at least one fluoride compound (F) and/or one chloride compound (Cl), and at least one complexing agent (CA), wherein the electrolyte (EL) does not contain an acid compound that is not a complexing agent. Furthermore, a process for the electrolytic polishing of a metallic substrate wherein the electrolyte (EL) is applied is described.

Abstract: Printheads for a jetting apparatus. In one embodiment, a printhead comprises a plurality of flow-through jetting channels each configured to jet a print fluid out of a nozzle. The printhead further includes a supply manifold fluidly coupled to the flow-through jetting channels, a return manifold fluidly coupled to the flow-through jetting channels, and one or more bypass manifolds fluidly coupled between the supply manifold and the return manifold.

Abstract: A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.

Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

Abstract: In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Abstract: In a method for forming nanopores, two opposing surfaces of a membrane are exposed to an electrically conducting liquid environment. A nanopore nucleation voltage pulse, having a first nucleation pulse amplitude and duration, is applied between the two membrane surfaces, through the liquid environment. After applying the nanopore nucleation voltage pulse, the electrical conductance of the membrane is measured and compared to a first prespecified electrical conductance. Then at least one additional nanopore nucleation voltage pulse is applied between the two membrane surfaces, through the liquid environment, if the measured electrical conductance is no greater than the first prespecified electrical conductance.

Abstract: The invention relates to a process for electrochemically removing a coating from coated workpieces by means of a voltage applied in an electrolyte bath between the workpiece and a counter-electrode. According to the invention, a rising voltage profile is selected during the coating removal process. This has the effect that the voltage applied at the start is low, and therefore the workpieces are not damaged, but nevertheless the rise in the voltage prevents the coating removal process taking an uneconomically long time.

Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Abstract: An electrolytic treatment method and electrolytic treatment device are provided for electrolytic treatment of an aluminum web W by applying an alternating current to an upstream electrode and a downstream electrode disposed along a conveying direction a. At least one of a conveying velocity v of the aluminum web W, a frequency f of alternating current applied at the upstream electrode and the downstream electrode, and/or a web conveying direction separation distance d2 between the upstream electrode and the downstream electrode are set such that the alternating current and voltage waveform applied to the aluminum web W at the far end of the upstream electrode and the alternating current and voltage waveform applied to the aluminum web W at the near end of the downstream electrode do not reinforce each other.

Abstract: The invention relates to a method for electrochemical processing of at least one workpiece, comprising at least the following steps: a) setting a first flow density during a first phase in an electrolyte, b) retaining the first flow density during a second phase following the first phase, c) increasing the first flow density during a third phase following the second phase to a second flow density at least 30% greater than the first flow density, and d) reducing the second flow density during a fourth phase following the third phase within a maximum of 100 microseconds to a maximum of 1% of the second flow density.

Abstract: An electrolytic machining system includes a controller, a feeding device coupled to the controller, a platform coupled to the controller and positioned opposite the feeding device, an electrolysis cell installed on the platform and configured to receive a workpiece, a cathode coupled to the drive member, a power supply module electrically coupled to the controller and the cathode, a processing tank communicating with the electrolysis cell, a pump communicating with the processing tank, and an electro-hydraulic servo valve communicating with the pump and the cathode and coupled to the controller. The controller can control the feeding device to translate in a direction toward and away from the workpiece in a processing gap, simultaneously control the electro-hydraulic servo valve to adjust a flux of the electrolytes passing through the electro-hydraulic servo valve to enable the electrolytes received in a machining area of the workpiece to have a stable hydraulic pressure.

Abstract: This invention relates to a method for texturing a silicon surface and silicon wafers made by the method, where the method comprises immersing the wafers in an alkaline solution at pH>10, and applying a potential difference between the wafer and a platinum electrode in the electrolyte in the range of +10 to +85 V.

Abstract: A system and method is described for electropolishing tubular metallic prostheses. In one aspect, the system provides a continuously changing set of points of contact between anode and prosthesis. In another aspect, the cathode is given a conical shape to correct for current concentrations that would otherwise exist and unevenly affect the amount of electropolishing over the length of the prosthesis.

Abstract: A method of electropolishing a medical implant is provided. During the electropolishing, an anodotic film forms around surfaces of the implant. Two or more ultrasonic transducers are oriented around the implant and are activated to disrupt the anodotic film. The ultrasonic transducers are activated only during a portion of the electropolishing process to allow the anodotic film to at least partially reform.

Abstract: This is a process to generate alternating current without an external source for cell-houses in electrowinning or electrorefining of copper or other products in which the electric source consists of a conventional rectifier-transformer group that supplies continuous electrical current to the cell-house, which is connected in parallel to a device characterized by having the capacity to extract an electrical current from the cell-house for a period of time and then return it in another period of time, whether periodically or semiperiodically and without changing the average value of the electrical current, supplied to the cell-house by the rectifier-transformer. This results in a electrical current in the cell-house that is the superimposition of a continuous and alternating current. This process is designed to overcome the barrier of electric potential produced by the presence of the pure continuous electric field in cell-houses through the electric agitation of an ion-rich electrolyte.

Abstract: The invention relates to a process for electrochemically removing a coating from coated workpieces by means of a voltage applied in an electrolyte bath between the workpiece and a counter-electrode. According to the invention, a rising voltage profile is selected during the coating removal process. This has the effect that the voltage applied at the start is low, and therefore the workpieces are not damaged, but nevertheless the rise in the voltage prevents the coating removal process taking an uneconomically long time.

Abstract: The invention concerns a method for the machining of a metallic structural component, particularly a structural component of a gas turbine, by means of finishing with a pulsed electrochemical ablation process, whereby the structural component features a pre-contour, to be finished, with different over-measures. The method is characterized by the following processing steps: a) determination of the different over-measures of the pre-contour, and b) bilateral and simultaneous finishing by means of a simultaneous feed of respectively at least one electrode disposed on different sides of the structural component, whereby the feed velocity of the electrode in the area of the largest over-measure of the pre-contour is higher than the feed velocity in the area of the smaller over-measure of the pre-contour.

Abstract: A method for making a lithographic printing plate support is disclosed comprising the steps of: (i) providing an aluminum support; (ii) treating said support in an aqueous solution; (iii) graining said treated support in an electrolyte solution by applying an alternating voltage thereby inducing a local current density J; characterized in that said local current density J at time t fulfills the following equation: J(t)?a+bQ(t) for t=o to t=tf and wherein Q(t) is the integrated value of the absolute value of the local current density at time t:(I)—a is equal to 5—b is equal to 10—and tf is the time necessary to obtain a value of Q(t) equal to 50 C/dm2.

Abstract: This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Abstract: A method for monitoring machining in an electroerosion assembly having a power supply and an electrode arranged across a gap from a workpiece, includes measuring a voltage at a point in a voltage waveform after a time delay td of one half of a pulse width of the voltage waveform. The measurements are repeated for multiple pulses of the voltage waveform to obtain multiple voltages, each of the voltages corresponding to a point in respective pulses. The voltages are averaged to obtain an average voltage, which is compared with at least one threshold voltage, to determine whether the machining is in control. A control signal is generated if the comparison indicates that the process is not in control, the control signal being configured to regulate an operating parameter of the power supply, and the control signal is supplied to the power supply, if generated.

Abstract: An electric contact in the outer edge thereof, is used for electroplating substrates, e.g. as a wafer in a cup plater. In order to obtain an even electroplating result, at least two electrolytic partial cells are formed which are supplied with current by respective electroplating current sources (9?) and (9?) that can be individually adjusted. The partial cathode (12?) and the associated partial anode (7?) are supplied in the region of the diametrically remote partial cathode (12?). Conversely, the partial cathode (12?) is supplied via the base layer of the partial cathode (12?). The required levelling of the layer thickness distribution is inter alia carried out by alternate different adjustments of the quantity of the electroplating current of the two partial cells and by the electrodes (7,12) that rotate relative to each other.

Abstract: A method and system are provided for the shaping and polishing of the surface of a material selected from the group consisting of electrically semi-conductive materials and conductive materials. An electrically non-conductive polishing lap incorporates a conductive electrode such that, when the polishing lap is placed on the material's surface, the electrode is placed in spaced-apart juxtaposition with respect to the material's surface. A liquid electrolyte is disposed between the material's surface and the electrode. The electrolyte has an electrochemical stability constant such that cathodic material deposition on the electrode is not supported when a current flows through the electrode, the electrolyte and the material. As the polishing lap and the material surface experience relative movement, current flows through the electrode based on (i) adherence to Faraday's Law, and (ii) a pre-processing profile of the surface and a desired post-processing profile of the surface.

Abstract: In a manufacturing method for closed vane wheels having vanes (2, 2a) between which vane channels (3) are formed which have a predefined shape, openings for the vane channels are prepared by means of a program-controlled chip forming cutting apparatus in a blank in a chip forming cutting process. In the manufacturing method, in a further workstep, electrodes (11) of an apparatus for spark erosion or for electrochemical stock removal are additionally introduced into the openings and a part of the predefined shape of the vane channel (3) is manufactured by means of spark erosion or by means of electrochemical stock removal.

Abstract: Device and method suitable for the electrochemical processing of an object. The device is provided at least with a chamber for accommodating an electrolyte, means for supporting the object to be processed in this chamber, electrodes arranged in this chamber, and control means for applying an electric current between the object to be processed and the electrodes.

Abstract: The invention relates to a method, an apparatus and a computer program for electrochemical machining where a removal of cathode depositions is performed in a fully automated way by means of an application of optimal pulses of a suitable polarity.

Abstract: A system for producing rugate tags comprises a processor and an etcher. The processor is configured to determine an identifying data value. The etcher is for producing an identifier. The identifier comprises a rugate phase tag.

Abstract: The invention provides a process for producing a metal body, which leads in a simple and reliable way to formation of a defined surface topography, if desired also combined, in the range from 10 nm to 500 ?m on a metal base body or blank which is to have, in particular, nanoscale pores. For this purpose, a pulsating current is applied to a metal base body in an electrolysis bath, with the electrolysis bath comprising salt former ions matched to the material of the metal base body. Furthermore, the invention provides a dental implant having particularly advantageous surface properties, in which a nanostructure is superimposed on a surface microstructure and nitrogen atoms and/or nitrogen compounds are attached and/or included in the region of the surface.

Abstract: A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

Abstract: In a method for producing a starting material (M, N, N?) for the production of a wear layer (420), a coating (40) with a composition which corresponds to that of the wear layer (420) which is to be produced is chemically undissolved from its substrate (30) and is detached as a solid body, and that the starting material (M, N, N?) is formed by the layer material (60) of the detached coating (40).

Abstract: A work piece is electroplated or electroplanarized using an azimuthally asymmetric electrode. The azimuthally asymmetric electrode is rotated with respect to the work piece (i.e., either or both of the work piece and the electrode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece. In some embodiments, the total current is distributed among a plurality of electrodes in a reaction cell in order to tailor the current distribution in the electrolyte over time. Focusing elements may be used to create “virtual electrode” in proximity to the surface of the work piece to further control the current distribution in the electrolyte during plating or planarization.

Abstract: Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

Abstract: A process for electropolishing metals and metalloids and their alloys, intermetallic compounds, metal-matrix composites, carbides and nitrides in an electrolytic cell utilizing an externally applied magnetic force to enhance the dissolution process. The electropolishing process is maintained under oxygen evolution to achieve an electropolished surface of the work piece exhibiting reduced microroughness, better surface wetting and increased surface energy, reduced and more uniform corrosion resistance, minimization of external surface soiling and improved cleanability in shorter time periods.

Abstract: Apparatus and process for removing surface regions of a component. The prior art involves removing surface regions of a metallic component by means of electrochemical processes. The electrochemical process is accelerated by the use of a current pulse generator.

Abstract: Methods and apparatus for providing closed-loop control over an electrochemical etching process during porous semiconductor fabrication enhance the quality of the porous semiconductor materials, especially those contained structural variations (such as porosity or morphology variations) along the thickness of said porous semiconductors. Such enhancement of the control over the electrochemical etching process is highly desired for many applications of porous semiconductor materials.

Abstract: An electropolishing device for polishing a cylindrical medical device such as a stent includes anodes in the form of rollers arranged to contact an exterior surface of the device. A drive mechanism rotates the anodes periodically during the electropolishing process to change a contact point between the anodes and the medical device. A tilting mechanism can also be used for periodically tilting the anodes during the electropolishing process to allow bubbles to escape from one end of the stent.

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented. For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract: Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed.

Abstract: A method of removing material from a conductive surface of a workpiece while the conductive surface and an electrode are wetted by a process solution. The method comprises the steps of applying power between the conductive surface and the electrode, rendering the conductive surface anodic. The method includes the step of allowing a passivation layer to build up on the conductive surface/The method includes the step of applying an external influence to the conductive surface to periodically reduce the passivation layer thickness. Advantages of the invention include an efficient technique for electropolishing a workpiece.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

Abstract: In order to even out the electrolytic treatment of workpieces 9 made of electrically non-conductive material and having a very thin base metallising 6, 8, a device is employed in a manner according to the invention comprising means for bringing treatment liquid into contact with the workpieces 9, means 10 for electrical contracting of the workpieces 9 at contacting sites and counterelectrodes 5.x which are so arranged that the workpieces 9 may be arranged opposing them, whereby the counterelectrodes 5.x are each subdivided into at least two electrode segments 13.x such that at least one contact-near electrode segment 13.1 and at least one contact-remote electrode segment 13.4 and possibly further electrode segments 13.2, 13.3 arranged between them are provided and each electrode segment 13.x is fed by a separate current source 15.x.

Abstract: A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface.

Abstract: A method for alternately electrodepositing and electro-mechanically polishing to selectively fill a semiconductor feature with metal including a) providing an anode assembly and a semiconductor wafer disposed in spaced apart relation including an electrolyte there between the semiconductor wafer including a process surface including anisotropically etched features arranged for an electrodeposition process; b) applying an electric potential across the anode assembly and the semiconductor wafer to induce an electrolyte flow at a first current density to electrodeposit a metal filling portion onto the process surface; c) reversing the electric potential to reverse the electrolyte flow at a second current density to electropolish the process surface in an electropolishing process; and, d) sequentially repeating the steps b and c to electrodeposit at least a second metal filling portion to substantially fill the anisotropically etched features.

Abstract: A multi-axis machine, with numerical control on each axis, is used to drive the tool and workpiece movements necessary to machining complex airfoil geometry. Tooling is typically made of a metal such as brass or other low cost material and rotates during machining. The tooling may be any shape(cylindrical, conical) and size depending on application. A DC power (continuous or pulsed) is used to provide voltage across the tool and workpiece. A medium such as water, de-ionized water, or electrolyte (such as sodium nitrite) is provided between the tool and workpiece. Workpiece metal is removed in a controlled manner by high intensity thermal erosion.

Abstract: A method for selectively removing a layer of electrolytically dissoluble metal from a substrate comprising providing a substrate bearing' on a major surface thereof a layer of electrolytically dissoluble metal, said metal layer serving; as a dissoluble electrode; providing at least a first counterelectrode and a second counterelectrode; positioning said counterelectrodes opposite said metal layer and spaced from said metal layer; in a first electrolytic step, interposing an electrolyte between said metal and said first counterelectrode and in electrical contact with said metal layer and said electrode and passing an electric current between said first counterelectrode and said metal layer, wherein said first counterelectrode is maintained cathodic to said metal layer, for a period of time until said metal layer has been removed from a first central region of said surface of said substrate opposite said first counterelectrode; in a second electrolytic step, interposing an electrolyte between said metal and sai

Abstract: A method for production of a rotor for centrifugal compressor, wherein the said rotor is produced from a monolithic disc, which is provided with a central hole. The method consists of use, within an isolating medium, of at least one first electrode which has polarity opposite the polarity of the rotor, wherein the said first electrode operates starting from the outer diameter of the monolithic disc, in order to produce the blades and the cavities of the said rotor, and wherein the processing takes place with a continuous path, consisting of a first step of roughing, followed by a second step of finishing with a tool which has a shape similar to that of the electrode used for the first roughing step, in order to produce an accurate geometry of the blades.

Abstract: A hard material layer deposited on a hard metal work piece is removed by electrolytic passivation in which a maximum current density equal to at least 0.01 A/cm2 is generated on the work piece at the beginning of the layer removal process. The hard material layer rapidly flakes off without causing substantial damage to the hard metal material located underneath.

Abstract: A method of pre-treating carbon or graphite material to increase porosity and render pore size more uniform includes etching by electrochemically pulsing the material in an acid saline solution and optionally steam treating.

Abstract: A uniform, controllable method for electrochemically roughening an aluminum-comprising surface to be used in a semiconductor processing apparatus is disclosed Typically the aluminum-comprising surface is aluminum or an aluminum alloy. The method involves immersing an aluminum-comprising surface in an HCl solution having a concentration ranging from about 1 volume % to about 5 volume %, at a temperature within the range of about 45° C. to about 80° C., then applying an electrical charge having a charge density ranging from about 80 amps/ft.2 to about 250 amps/ft.2 for a time period ranging from about 4 minutes to about 25 minutes. A chelating agent may be added to enhance the roughening process. The electrochemical roughening method can be used on aluminum alloys in general, including but not limited to 6061 and LP. The electrochemical roughening provides a smoothly rolling surface which does not entrap particles and which provides increased surface area for semiconductor process byproduct adhesion.