Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.

Abstract: A micromechanical component for a capacitive pressure sensor device includes a substrate; a frame structure that frames a partial surface; a membrane that is tensioned by the frame structure such that a self-supporting region of the membrane extends over the framed partial surface and an internal volume with a reference pressure therein is sealed in an airtight fashion, the self-supporting region of the membrane being deformable by a physical pressure on an external side of the self-supporting region that not equal to the reference pressure; a measurement electrode situated on the framed partial surface; and a reference measurement electrode that is situated on the framed partial surface and is electrically insulated from the measurement electrode.

Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.

Abstract: A semiconductor substrate includes a first semiconductor layer, a first dielectric layer coupled to the first semiconductor layer, and a second semiconductor layer coupled to the first dielectric layer. The second semiconductor layer includes a base portion substantially aligned with the first dielectric layer and a cantilever portion protruding from an end of the first dielectric layer. The cantilever portion includes a tapered surface tapering from a bottom surface of the second semiconductor layer toward a top surface of the second semiconductor layer.

Abstract: In one or more embodiments, an apparatus includes a substrate and die package, a thermal transfer plate positioned adjacent to the substrate and die package for cooling the substrate and die package, wherein at least one electrical path extends through the thermal transfer plate for transmitting power from a power module to the substrate and die package, and a microelectromechanical system (MEMS) module comprising a plurality of air movement cells for dissipating heat from the thermal transfer plate.

Abstract: Microvalve assemblies are disclosed that in some examples include a body including first and second ports and a body plate. The microvalve assemblies further include an actuator assembly including one or more exterior plates coupled to a stack. One of the one or more exterior plates contacts the body plate to form a seat and thereby restrict fluid flow from the first port to the second port, when the stack is not energized. Additionally, the actuator assembly is configured to, when the stack is energized, periodically generate a gap between the one of the one or more exterior plates and the body plate via near-field-acoustic-levitation (NFAL) to allow fluid flow through the first and second ports. Advantageously, the microvalves of this technology are relatively small and consume minimal power, thereby overcoming size and power limitations of existing valves, including pneumatic valve technologies.

Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.

Abstract: A vapor deposition mask includes a front surface, a back surface opposite to the front surface, and inner surfaces defining the respective mask holes. Each mask hole extends between the front surface and the back surface. In a plan view of the front surface, each mask hole includes a large opening, which is located at the front surface, and a small opening, which is located inside the large opening. At least a section of each mask hole has a shape of an inverted frustum extending between the large opening and the small opening. Each inner surface includes a stepped surface spreading from the small opening toward the large opening.

Abstract: The present invention provides a method of in situ 4D printing of high-temperature materials including 3D printing a structure of an ink including a precursor. The structure is treated with controlled high energy flow to create a portion which has a different coefficient of thermal expansion/thermal shrinkage ratio. The structure is heated and the difference in the coefficient of thermal expansion creates an interface stress to cause a selected level of deformation. Alternatively, two structures with different coefficients of expansion/thermal shrinkage ratio may be printed. Thermal treatment of the two structures creates an interface stress to cause a selected level of deformation.

Abstract: An image sensor includes polarizing filters and spectral filters that provide on-chip simultaneous full Stokes polarization parameters (both linear and circular polarization) and multi/hyper spectral imaging. A polarizing filter polarizes incident light into a predetermined linear direction. The light-polarizing filter includes a wire grid and an array of phase-modulating nanostructures. The wire grid includes at least one wire that includes a series of metal-insulator-metal wire structures. The array of phase-modulating nanostructures is formed on the wire grid and changes a phase of the incident light a predetermined amount. A phase-modulating nanostructure is a high-dielectric-index nanostructure that changes of incident light based on a first width and a second width of the phase-modulating nanostructure in which the first width is perpendicular to the second width.

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

Abstract: Provided herein are medical devices comprising a plurality of biologically interactive devices configured for interacting with a large area biological surface. The biologically interactive devices each may comprise a sensor for measuring a physiological parameter. A wireless controller is configured to wirelessly operate the plurality of biologically interactive devices. A wireless transmitter is configured for wirelessly communicating an output from said plurality of biologically interactive devices to a remote receiver. The medical devices are particularly suited for measuring one or both of pressure and temperature, with compatibility for incorporating additional sensors of interest.

Abstract: A micro-electromechanical platform and array system and methods for identifying microbial species with single molecule electrical conductance measurements are provided. The electromechanical platform has a two-tier actuation mechanism with a long stroke provided by a comb drive and a fine stroke provided by an in-plane flexural actuator. The platform is capable of making contact with a single-molecule, applying a bias, measuring the current, and performing a large number of measurements for statistical analysis. The system is capable of detecting any microbial species without requiring enzymatic amplification by detecting specific RNA sequences, for example. With oligonucleotide target molecules, the conductance is extremely sensitive to the sequence so even single-nucleotide polymorphisms can be identified. The system can also discern between subspecies using the same DNA probe.

Abstract: A display device includes: a first substrate; thin-film transistors disposed on a first surface of the first substrate; light emitting elements connected to corresponding ones of the thin-film transistors, respectively, and disposed on the thin-film transistors; and a lens array including lenses disposed on a second surface of the first substrate opposite to the first surface of the first substrate, wherein the light emitting elements emit light toward the first substrate.

Abstract: A capacitive microelectromechanical acceleration sensor where one or more rotor measurement plates and one or more stator measurement plates are configured so that the movement of a proof mass in the direction of a sense axis can be measured in a capacitive measurement conducted between them. One or more first rotor damping plates and one or more first stator damping plates form a first set of parallel plates which are orthogonal to a first damping axis, and the first damping axis is substantially orthogonal to the sense axis.

Abstract: In one example, an apparatus that is part of a Light Detection and Ranging (LiDAR) module of a vehicle comprises a semiconductor integrated circuit comprising a microelectromechanical system (MEMS) and a substrate. The MEMS comprises an array of micro-mirror assemblies, each micro-mirror assembly comprising: a micro-mirror having a first thickness; and an actuator comprising first fingers and second fingers, the first fingers being connected with the substrate, the second fingers being mechanically connected to the micro-mirror having a second thickness smaller than the first thickness, the actuator being configured to generate an electrostatic force between the first fingers and the second fingers to rotate the micro-mirror to reflect light emitted by a light source out of the LiDAR module or light received by the LiDAR module to a receiver.

Abstract: A method for making a quantum device including: forming, over a semiconductor layer, a graphoepitaxy guide forming a cavity with a lateral dimension that is a multiple of a period of self-assembly of a di-block copolymer into lamellas; first deposition of the copolymer in the cavity; first self-assembly of the copolymer, forming a first alternating arrangement of first lamellas and of second lamellas; removal of the first lamellas; implantation of dopants in portions of the semiconductor layer previously covered with the first lamellas; removal of the second lamellas; second deposition of the copolymer in the cavity, over a gate material; second self-assembly of the copolymer, forming a second alternating arrangement of first and second lamellas; removal of the second lamellas; etching of portions of the gate material previously covered with the second lamellas.

Abstract: A method includes measuring a temperature of a semiconductor die, in which the semiconductor die includes a piezoelectric device, a pyroelectric device, and a memory. The method further includes receiving a first signal from the pyroelectric device, and based on the first signal, determining a parameter to be combined with a second signal from the piezoelectric device. The method further includes storing the parameter and the measured temperature into the memory.

Abstract: A method of making an organ or tissue comprises: (a) providing a first dispenser containing a structural support polymer and a second dispenser containing a live cell-containing composition; (b) depositing a layer on said support from said first and second dispenser, said layer comprising a structural support polymer and said cell-containing composition; and then (c) iteratively repeating said depositing step a plurality of times to form a plurality of layers one on another, with separate and discrete regions in each of said layers comprising one or the other of said support polymer or said cell-containing composition, to thereby produce provide a composite three dimensional structure containing both structural support regions and cell-containing regions. Apparatus for carrying out the method and composite products produced by the method are also described.

Abstract: A nanoscale bolometer for infrared (IR) thermal imaging comprises a subwavelength antenna that provides a specific detectivity approaching a fundamental, thermodynamic limit. The uncooled nanobolometer achieves performance comparable to cooled, high-performance, semiconductor photodetectors, but with significantly reduced size, weight, power, and cost.

Abstract: A semiconductor wafer has formed within it a plurality of piston tops of equal area. Each of the piston tops includes a thin flat region from which a majority of the thickness of the original semiconductor wafer may have been removed. A first one of the piston tops has a lower thickness than a second one of the piston tops. The second piston top has at least one hole in it, the volume of the hole corresponding to the difference in thickness between the first and second piston tops, such that the masses of the first and second piston tops differ by less than the variation in thickness between them.

Abstract: The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

Abstract: A non-etched gap is introduced along the length of an integrated Bragg grating with etched grooves such that the coupling coefficient, K, of the grating is reduced by the non-etched gap. In this way, multiple grating K values may be defined within a photonic integrated circuit using a single lithography and etch step. Additionally, the non-etched gap width may be varied along the length of a single grating to implement a chirped grating.

Abstract: An integrated circuit (IC) device includes: a first substrate; a dielectric layer disposed over the first substrate; and a second substrate disposed over the dielectric layer. The second substrate includes anchor regions comprising silicon extending upwards from the dielectric layer, and a series of interdigitated fingers extend from inner sidewalls of the anchor regions. The interdigitated fingers extend generally in parallel with one another in a first direction and have respective finger lengths that extend generally in the first direction. A plurality of peaks comprising silicon is disposed on the dielectric layer directly below the respective interdigitated fingers. The series of interdigitated fingers are cantilevered over the plurality of peaks. A first peak is disposed below a base of a finger and has a first height, and a second peak is disposed below a tip of the finger and has a second height less than the first height.

Abstract: A method for fabricating a cantilever having a device surface, a tapered surface, and an end region includes providing a semiconductor substrate having a first side and a second side opposite to the first side and etching a predetermined portion of the second side to form a plurality of recesses in the second side. Each of the plurality of recesses comprises an etch termination surface. The method also includes anisotropically etching the etch termination surface to form the tapered surface of the cantilever and etching a predetermined portion of the device surface to release the end region of the cantilever.

Abstract: Provided are methods, devices, and kits for the isolation of extracellular vesicles using silicon nanomembranes. A method for EV isolation includes the steps of collecting a biofluid sample, contacting the biofluid sample with a pre-filtration membrane, thereby forming a first filtrate and a first retentate, optionally, washing the first retentate of the pre-filtration membrane, contacting the first filtrate from the pre-filtration membrane with a capture membrane, thereby forming a second filtrate and a second retentate, optionally, washing the second retentate, and eluting the second retentate from the capture membrane or lysing the second retentate to recover the contents.

Abstract: An imprint apparatus that brings a mold and an imprint material on a substrate into contact with each other to form a pattern of the imprint material on the substrate is provided. The apparatus comprises a supplying unit configured to supply the imprint material to the substrate, and a control unit configured to control the supplying unit in accordance with arrangement data of the imprint material that indicates a position where the imprint material is to be supplied on the substrate, wherein the control unit determines the arrangement data based on a feature related to a spread of a droplet of the imprint material on the substrate.

Abstract: Techniques are provided for making a funnel-shaped nozzle in a substrate. The process can include forming a first opening having a first width in a top layer of a substrate, forming a patterned layer of photoresist on the top surface of the substrate, the patterned layer of photoresist including a second opening, the second opening having a second width larger than the first width, reflowing the patterned layer of photoresist to form curved side surfaces terminating on the top surface of the substrate, etching a second layer of the substrate through the first opening in the top layer of the substrate to form a straight-walled recess, the straight-walled recess having the first width and a side surface substantially perpendicular to the top surface of the semiconductor substrate.

Abstract: In a described example, an apparatus includes: at least one electrode having a base on a first surface of a substrate and extending away from the base to an end; a counter-electrode spaced from the end of the at least one electrode, having a first conductive surface facing the end; and a package having a cavity containing the at least one electrode, the substrate, and the counter-electrode, the package having at least one opening configured to allow an atmosphere to enter the cavity.

Abstract: A microelectromechanical inertial sensor including a substrate and an electromechanical structure situated on the substrate.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

Abstract: A method for manufacturing a micromechanical sensor, in particular a pressure difference sensor, including creating a functional layer on a substrate; creating at least one rear side trench area proceeding from a rear side of a substrate, for exposing the functional layer for a sensor diaphragm; creating at least one front side trench area for forming at least one supporting structure, in particular an energy storage structure, preferably in the form of a spring structure, in the substrate as a mounting for the sensor diaphragm; and at least partially filling at least a front side trench area with a gel.

Abstract: A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.

Abstract: High-throughput column arrays of vascularized living parenchyma/tissue having pillars dispersed in specialized configurations and arrangements substantially vertically through the column to provide support, passive or active perfusion, and access to internal portions of tissue for analytical sampling needs, along with 3-D printing methods of manufacture and analytical screening methods employing the column arrays.

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material.

Abstract: Systems and methods for sealing a plurality of reservoirs of a microchip element with a sealing grid are provided. For example, in one embodiment, a microchip element comprises a primary substrate having a plurality of reservoirs defined therein. The microchip element also includes a single continuous sealing groove defined in the primary substrate that extends around each of the plurality of reservoirs. In addition, the microchip element includes a sealing substrate comprising a single continuous sealing protrusion extending therefrom. The single continuous sealing protrusion corresponds to and is configured to mate with the single continuous sealing groove to form a hermetic bond between the primary substrate and the sealing substrate. In this manner, the single continuous sealing groove and the single continuous sealing protrusion form a sealing grid about the plurality of reservoirs.

Abstract: A method of manufacturing a semiconductor ICF target is described. On an n-type silicon wafer a plurality of hard mask layers are etched to a desired via pattern. Then isotropically etching hemispherical cavities, lithographically patterning the hard mask layers, conformally depositing ablator/drive material(s) and shell layer material(s), inserting hollow silicon dioxide fuel spheres in the hemisphere cavities, thermally bonding a mating wafer with matching hemisphere cavities and etching in ethylene diamine-pryrocatechol-water mixture to selectively remove n-type silicon and liberate the spherical targets.

Abstract: A recording element substrate is bonded to an FPC in at least a part of a region of a second face between a liquid supply port and an edge of the recording element substrate, and an electric connection part is provided in which a wiring conductor and a pad are electrically connected to each other by a bonding wire.

Abstract: A method for manufacturing a hollow protruding implement (1) including a fine hollow protrusion (3) having an opening (3h) of the present invention includes a protrusion forming step of inserting a projecting mold part (11) into a base material sheet (2A) from one face (2D) side thereof, the base material sheet containing a thermoplastic resin, thereby forming a non-penetrated hollow protrusion (3) projecting from another face (2U) side of the base material sheet (2A). Subsequently, an opening forming step is performed in which an opening (3h) that penetrates the hollow protrusion (3) is formed by using a contactless opening forming means disposed on the other face (2U) side of the base material sheet (2A).

Abstract: The present invention relates to a microneedle array and a method for manufacturing the same, the microneedle array comprising: a support; and a plurality of microneedles loaded with a solid-phase formulation which protrude from the upper portion of the support, wherein a liquid-phase formulation is applied or added dropwise onto an area of the upper portion of the support in which the microneedles are not formed, or in a case where one or more holes are formed in the support, the liquid-phase formulation is released, through the holes, onto the area of the upper portion of the support in which the microneedles are not formed.

Abstract: A substrate processing system for a substrate processing chamber includes a gas delivery system configured to direct process gases toward a substrate support in the substrate processing chamber and a controller. During processing of a substrate arranged on the substrate support the controller is configured to calculate, based on at least one of a position of an edge ring of the substrate support and characteristics of the process gases directed toward the substrate support, a distribution of etch by-product material redeposited onto the substrate during processing and, in response to the calculated distribution, generate control signals to cause an actuator to selectively adjust a position of the edge ring relative to the substrate and cause the gas delivery system to selectively adjust a flow of the process gases.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.

Abstract: A capacitive device includes a unit cell including a CMUT, and a transmission/reception plate for impedance matching which is provided above the unit cell via a connection portion, in which a membrane of the CMUT constituting the unit cell is connected to the transmission/reception plate via the connection portion having an area smaller than that of the transmission/reception plate. The area of the transmission/reception plate is desirably larger than the area of a hollow portion of the CMUT.