Etching Of Semiconductor Material To Produce An Article Having A Nonelectrical Function Patents (Class 216/2)
  • Patent number: 11573203
    Abstract: In a described example, an apparatus includes: at least one electrode having a base on a first surface of a substrate and extending away from the base to an end; a counter-electrode spaced from the end of the at least one electrode, having a first conductive surface facing the end; and a package having a cavity containing the at least one electrode, the substrate, and the counter-electrode, the package having at least one opening configured to allow an atmosphere to enter the cavity.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: February 7, 2023
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Enis Tuncer
  • Patent number: 11571895
    Abstract: Techniques are provided for making a funnel-shaped nozzle in a substrate. The process can include forming a first opening having a first width in a top layer of a substrate, forming a patterned layer of photoresist on the top surface of the substrate, the patterned layer of photoresist including a second opening, the second opening having a second width larger than the first width, reflowing the patterned layer of photoresist to form curved side surfaces terminating on the top surface of the substrate, etching a second layer of the substrate through the first opening in the top layer of the substrate to form a straight-walled recess, the straight-walled recess having the first width and a side surface substantially perpendicular to the top surface of the semiconductor substrate.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: February 7, 2023
    Assignee: FUJIFILM Dimatix, Inc.
    Inventors: Gregory DeBrabander, Mark Nepomnishy
  • Patent number: 11561238
    Abstract: A microelectromechanical inertial sensor including a substrate and an electromechanical structure situated on the substrate.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: January 24, 2023
    Assignee: Robert Bosch GmbH
    Inventors: Stefan Kiesel, Tobias Boeser
  • Patent number: 11530355
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: December 20, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11519803
    Abstract: A method for manufacturing a micromechanical sensor, in particular a pressure difference sensor, including creating a functional layer on a substrate; creating at least one rear side trench area proceeding from a rear side of a substrate, for exposing the functional layer for a sensor diaphragm; creating at least one front side trench area for forming at least one supporting structure, in particular an energy storage structure, preferably in the form of a spring structure, in the substrate as a mounting for the sensor diaphragm; and at least partially filling at least a front side trench area with a gel.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: December 6, 2022
    Assignee: Robert Bosch GmbH
    Inventors: Arne Dannenberg, Stephan Oppl
  • Patent number: 11518913
    Abstract: A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: December 6, 2022
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Lin Fu, Jason A. Sherlock, Long Huy Bui, Douglas E. Ward
  • Patent number: 11492579
    Abstract: High-throughput column arrays of vascularized living parenchyma/tissue having pillars dispersed in specialized configurations and arrangements substantially vertically through the column to provide support, passive or active perfusion, and access to internal portions of tissue for analytical sampling needs, along with 3-D printing methods of manufacture and analytical screening methods employing the column arrays.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: November 8, 2022
    Assignee: Advanced Solutions Life Sciences, LLC
    Inventor: James Beatty Hoying
  • Patent number: 11495445
    Abstract: A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: November 8, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Uchida, Yusuke Mizuno
  • Patent number: 11456152
    Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: September 27, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph C. Olson, Morgan Evans, Rutger Meyer Timmerman Thijssen
  • Patent number: 11446655
    Abstract: Systems and methods for sealing a plurality of reservoirs of a microchip element with a sealing grid are provided. For example, in one embodiment, a microchip element comprises a primary substrate having a plurality of reservoirs defined therein. The microchip element also includes a single continuous sealing groove defined in the primary substrate that extends around each of the plurality of reservoirs. In addition, the microchip element includes a sealing substrate comprising a single continuous sealing protrusion extending therefrom. The single continuous sealing protrusion corresponds to and is configured to mate with the single continuous sealing groove to form a hermetic bond between the primary substrate and the sealing substrate. In this manner, the single continuous sealing groove and the single continuous sealing protrusion form a sealing grid about the plurality of reservoirs.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: September 20, 2022
    Assignee: Dare MB Inc.
    Inventor: Robert Farra
  • Patent number: 11443937
    Abstract: A method of manufacturing a semiconductor ICF target is described. On an n-type silicon wafer a plurality of hard mask layers are etched to a desired via pattern. Then isotropically etching hemispherical cavities, lithographically patterning the hard mask layers, conformally depositing ablator/drive material(s) and shell layer material(s), inserting hollow silicon dioxide fuel spheres in the hemisphere cavities, thermally bonding a mating wafer with matching hemisphere cavities and etching in ethylene diamine-pryrocatechol-water mixture to selectively remove n-type silicon and liberate the spherical targets.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: September 13, 2022
    Assignee: Innoven Energy LLC
    Inventor: Tyler A. Lowrey
  • Patent number: 11433224
    Abstract: A method for manufacturing a hollow protruding implement (1) including a fine hollow protrusion (3) having an opening (3h) of the present invention includes a protrusion forming step of inserting a projecting mold part (11) into a base material sheet (2A) from one face (2D) side thereof, the base material sheet containing a thermoplastic resin, thereby forming a non-penetrated hollow protrusion (3) projecting from another face (2U) side of the base material sheet (2A). Subsequently, an opening forming step is performed in which an opening (3h) that penetrates the hollow protrusion (3) is formed by using a contactless opening forming means disposed on the other face (2U) side of the base material sheet (2A).
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: September 6, 2022
    Assignee: KAO CORPORATION
    Inventors: Shinji Hamamoto, Takatoshi Niitsu
  • Patent number: 11433667
    Abstract: A recording element substrate is bonded to an FPC in at least a part of a region of a second face between a liquid supply port and an edge of the recording element substrate, and an electric connection part is provided in which a wiring conductor and a pad are electrically connected to each other by a bonding wire.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: September 6, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tomohiro Takahashi, Toru Nakakubo, Akio Saito, Takeyori Sato, Katsumi Eda, Takeshi Shibata
  • Patent number: 11426571
    Abstract: The present invention relates to a microneedle array and a method for manufacturing the same, the microneedle array comprising: a support; and a plurality of microneedles loaded with a solid-phase formulation which protrude from the upper portion of the support, wherein a liquid-phase formulation is applied or added dropwise onto an area of the upper portion of the support in which the microneedles are not formed, or in a case where one or more holes are formed in the support, the liquid-phase formulation is released, through the holes, onto the area of the upper portion of the support in which the microneedles are not formed.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: August 30, 2022
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Hyung Il Jung, Hui Suk Yang
  • Patent number: 11421156
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: August 23, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11424103
    Abstract: A substrate processing system for a substrate processing chamber includes a gas delivery system configured to direct process gases toward a substrate support in the substrate processing chamber and a controller. During processing of a substrate arranged on the substrate support the controller is configured to calculate, based on at least one of a position of an edge ring of the substrate support and characteristics of the process gases directed toward the substrate support, a distribution of etch by-product material redeposited onto the substrate during processing and, in response to the calculated distribution, generate control signals to cause an actuator to selectively adjust a position of the edge ring relative to the substrate and cause the gas delivery system to selectively adjust a flow of the process gases.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: August 23, 2022
    Assignee: Lam Research Corporation
    Inventors: Yiting Zhang, Saravanapriyan Sriraman, Alex Paterson
  • Patent number: 11390806
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 19, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11390807
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 19, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11380568
    Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.
    Type: Grant
    Filed: November 5, 2020
    Date of Patent: July 5, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Kippei Sugita, Daisuke Kawano, Yoshihiro Yanagi
  • Patent number: 11376628
    Abstract: A capacitive device includes a unit cell including a CMUT, and a transmission/reception plate for impedance matching which is provided above the unit cell via a connection portion, in which a membrane of the CMUT constituting the unit cell is connected to the transmission/reception plate via the connection portion having an area smaller than that of the transmission/reception plate. The area of the transmission/reception plate is desirably larger than the area of a hollow portion of the CMUT.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: July 5, 2022
    Assignee: Hitachi, Ltd.
    Inventors: Taiichi Takezaki, Hiroaki Hasegawa, Shuntaro Machida
  • Patent number: 11262347
    Abstract: A chip for blood plasma separation includes: (i) a body part, in which a sealed space through which blood can flow is integrally formed and the channel part and a ridge are alternately and continuously formed; (ii) an inflow part, which is disposed at an upper region of the body part into which the blood inflows; (iii) an outlet for discharging blood cells located at one side surface of the body part; and (iv) an outlet for discharging blood plasma located at the other side surface of the body part, in which the ridge is formed discretely, a chip array for blood plasma separation including the chip for blood plasma separation, a device for blood plasma separation including the chip for blood plasma separation and/or the chip array for blood plasma separation, and a method for blood plasma separation using the device.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: March 1, 2022
    Assignee: CURIOSIS CO., LTD.
    Inventors: Ho Young Yun, Sung Young Choi
  • Patent number: 11261346
    Abstract: The present invention provides a polishing composition for use in polishing a material having a Vickers hardness of 1500 Hv or higher. The polishing composition comprises an alumina abrasive and water. The alumina abrasive has an isoelectric point that is below 8.0 and is lower than the pH of the polishing composition.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: March 1, 2022
    Assignee: FUJIMI INCORPORATED
    Inventor: Tomoaki Ishibashi
  • Patent number: 11211258
    Abstract: A method for DRIE matched release and/or the mitigation of photo resist pooling, comprising: depositing a first mask layer over a first surface of a silicon substrate; exposing a first portion and second portion of the first mask layer to a first etch process, wherein the exposing forms a first exposed layer; depositing a second mask layer over the first mask layer; exposing a third portion of the second mask layer to a second etch process, wherein the exposing forms a second exposed mask layer, and wherein the third portion overlaps the first portion of the first mask layer; developing the second mask layer and etching the third portion of the second mask layer and developing the first portion of the first mask layer; etching the first portion of the first mask layer to a first depth; and developing the first mask layer to reveal exposed portions of the first mask layer and etching the second portion of the silicon substrate to a second depth.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: December 28, 2021
    Assignee: INVENSENSE, INC.
    Inventor: Ian Flader
  • Patent number: 11189496
    Abstract: Disclosed are a plasma reactor for ultra-high aspect ratio etching and an etching method therefor, wherein the plasma reactor comprises: a reaction chamber inside which a reaction space is formed; a base disposed at the bottom of the reaction space and configured for supporting a to-be-processed substrate; a gas showerhead disposed at the top inside the reaction chamber; wherein a first radio frequency power supply outputs a radio frequency power with a first frequency to the base or the gas showerhead so as to form and maintain plasma in the reaction chamber; and a second radio frequency power supply which outputs a radio frequency power with a second frequency to the base so as to control the ion energy incident to the base; wherein the first frequency is not less than 4 MHz, and the second frequency is not less than 10 KHz but not more than 300 KHz.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: November 30, 2021
    Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA
    Inventors: Gerald Zheyao Yin, Yichuan Zhang, Jie Liang, Xingcai Su, Tuqiang Ni
  • Patent number: 11169327
    Abstract: The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.
    Type: Grant
    Filed: August 4, 2020
    Date of Patent: November 9, 2021
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Kyoungsik Yu, Youngho Jung
  • Patent number: 11161734
    Abstract: Disclosed a MEMS assembly and a manufacturing method thereof. The manufacturing method comprises: forming a groove on a sensor chip; forming a bonding pad on a circuit chip; bonding the sensor chip and the circuit chip together to form a bonding assembly; performing a first dicing process at a first position of the sensor chip to penetrate through the sensor chip to the groove; performing a second dicing process at a second position of the sensor chip to penetrate through the sensor chip and the circuit chip, for obtaining an individual MEMS assembly by singulating the bonding assembly, wherein location of the groove corresponds to a position of the bonding pad, and an opening is formed in the sensor chip to expose the bonding pad when the second dicing process is performed. The method uses two dicing process respectively achieving different depths to expose the bonding pad of the sensor chip and singulate the MEMS assembly, respectively, to improve yield and reliability.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: November 2, 2021
    Assignees: HANGZHOU SILAN INTEGRATED CIRCUITS CO., LTD., HANGZHOU SILAN MICROELECTRONICS CO., LTD.
    Inventors: Yongxiang Wen, Chen Liu, Feng Ji, XiaoLi Zhang
  • Patent number: 11155285
    Abstract: An optical system (100) for a light emitting diode (LED) signal includes a plurality of light emitting diodes (LEDs) (12, 14), a plurality of optical lenses (20, 40, 60, 80) for diverging and collimating light generated by the plurality of LEDs (12, 14), wherein the plurality of LEDs (12, 14) and the plurality of optical lenses (20, 40, 60, 80) are sequentially arranged in an axial direction, and wherein the plurality of optical lenses (20, 40, 60, 80) are configured such that by altering an axial position of one of the optical lenses (20, 40, 60, 80) from a first defined axial position to a second defined axial position, a final angular light distribution of the optical system (100) is variable.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: October 26, 2021
    Assignee: Siemens Mobility, Inc.
    Inventors: Axel Beier, Volker Türck
  • Patent number: 11149200
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 19, 2021
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11126021
    Abstract: A method for manufacturing a semiconductor optical device includes the steps of forming a first semiconductor layer on a substrate; forming a mask on the first semiconductor layer; forming a first mesa from the first semiconductor layer using the mask; forming an embedding layer on a portion of the first semiconductor layer that is exposed from the mask such that the first mesa is embedded in the embedding layer; and forming a second mesa from the first mesa.
    Type: Grant
    Filed: August 4, 2020
    Date of Patent: September 21, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Tomokazu Katsuyama
  • Patent number: 11053116
    Abstract: The present invention discloses a Micro-Electro-Mechanical System (MEMS) acoustic pressure sensor device and a method for making same. The MEMS device includes: a substrate; a fixed electrode provided on the substrate; and a multilayer structure, which includes multiple metal layers and multiple metal plugs, wherein the multiple metal layers are connected by the multiple metal plugs. A cavity is formed between the multilayer structure and the fixed electrode. Each metal layer in the multilayer structure includes multiple metal sections. The multiple metal sections of one metal layer and those of at least another metal layer are staggered to form a substantially blanket surface as viewed from a moving direction of an acoustic wave.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: July 6, 2021
    Assignee: PIXART IMAGING INCORPORATION
    Inventor: Chuan-Wei Wang
  • Patent number: 11047875
    Abstract: An inertial sensor includes a substrate and a structure disposed on the substrate. The structure includes a detection movable body which overlaps the substrate in a direction along a Z-axis and includes a movable detection electrode, a detection spring that supports the detection movable body, a drive portion that drives the detection movable body in a direction along an X-axis with respect to the substrate, a fixed detection electrode fixed to the substrate and facing the movable detection electrode, a first compensation electrode for applying an electrostatic attraction force having a first direction component different from the direction along the X-axis to the detection movable body, and a second compensation electrode for applying an electrostatic attraction force having a second direction component opposite to the first direction component to the detection movable body.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: June 29, 2021
    Assignee: Seiko Epson Corporation
    Inventor: Teruo Takizawa
  • Patent number: 11033862
    Abstract: Disclosed is a method of manufacturing a partially freestanding two-dimensional crystal film (16, 16?), the method comprising providing a substrate (10) carrying a catalyst layer (14) for forming the two-dimensional crystal layer on a first surface; forming the two-dimensional crystal film on the catalyst layer; covering at least the two-dimensional crystal film with a protective layer (18); etching a cavity (24) in a second surface of the substrate, the second surface being opposite to the first surface, said cavity terminating on the catalyst layer; etching the exposed part of the catalyst layer from the cavity; and removing the protective layer, thereby obtaining a two-dimensional crystal film that is freestanding over said cavity. A device manufactured in this manner is also disclosed.
    Type: Grant
    Filed: April 21, 2014
    Date of Patent: June 15, 2021
    Assignee: Koninklijke Philips N.V.
    Inventors: Kamal Asadi, Johan Hendrik Klootwijk
  • Patent number: 11027969
    Abstract: A micro-device including at least one first element comprising at least: a portion of material corresponding to a compound of at least one semi-conductor and at least one metal, first and second protective layers each covering one of two opposite faces of said portion of material, such that the first and second protective layers are in direct contact with said portion of material, that the first protective layer comprises at least one first material able to withstand an HF etching, that the second protective layer comprises at least one second material able to withstand the HF etching, and that at least one of the first and second materials able to withstand the HF etching includes the semi-conductor.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: June 8, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Stephanus Louwers
  • Patent number: 11020345
    Abstract: Microdevices containing a chamber bound on one side by a nanoporous membrane are provided. The nanoporous membrane may contain hollow nanotubes that extend through the nanoporous membrane, from one surface to the other, and extend beyond the surface of the nanoporous membrane opposite the surface interfacing with the chamber. The nanotubes may provide a fluidic conduit between an environment external to the microdevice and the chamber, which is otherwise substantially fluid-tight. Also provided are methods of making a microdevice and methods of using the microdevices.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: June 1, 2021
    Assignee: The Regents of the University of California The Board of Trustees of the Leland Stanford Junior University Stanford
    Inventors: Cade B. Fox, Hariharasudhan Chirra Dinakar, Nicholas A. Melosh, Tejal A. Desai
  • Patent number: 11011548
    Abstract: An electronic device includes a plurality of layers formed on a silicon-on-insulator (SOI) substrate. The SOI substrate includes a support substrate, a buried insulating layer formed on the support substrate, and a silicon layer formed on the buried insulating layer. A membrane structure of the electronic device includes the plurality of layers, the buried insulating later and the silicon layer but does not include the support substrate. A passivation film covers an upper surface and a side surface of the membrane structure.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: May 18, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Junko Izumitani
  • Patent number: 10994540
    Abstract: A substrate having an obliquely running through hole is manufactured by arranging first and second masks each having an opening pattern on first and second surfaces, respectively, of the substrate, then forming cavities each facing an opening of the opening patterns from the respective surfaces by anisotropic dry etching, and making the cavities formed from the first surface and the cavities formed from the second surface communicate with each other to produce the through hole. The opening pattern of the first mask and the opening pattern of the second mask are arranged adjacently to or partially overlapping with each other as viewed from the direction orthogonal to the substrate. The opening area of at least one of the openings of the first and second masks are increased along the direction from the mask including the at least one opening toward the oppositely disposed mask.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: May 4, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Atsunori Terasaki
  • Patent number: 10957819
    Abstract: A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: March 23, 2021
    Assignee: UNM RAINFOREST INNOVATIONS
    Inventors: Steven R. J. Brueck, Seung-Chang Lee, Christian Wetzel, Mark Durniak
  • Patent number: 10955722
    Abstract: An object of the present invention is to provide a single drive type optical modulator having good high-frequency characteristics and reduced wavelength chirp of the modulated light.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: March 23, 2021
    Assignee: TDK CORPORATION
    Inventors: Shinji Iwatsuka, Kenji Sasaki
  • Patent number: 10948366
    Abstract: A flexible sensor includes a first electrode, a second electrode, and a piezoresistive element incorporating piezoresistive composite material arranged between the first electrode and the second electrode. Piezoresistive composite materials include a thermoplastic elastomer (TPE) and a conductive filler material (e.g., carbon), may have an elastic modulus value of preferably less than about 1×10?3 GPa, and exhibit a change in electrical resistance responsive to a change in pressure applied thereto. Exemplary flexible sensors may have a thickness and a feel similar to human skin, may be amenable to simple fabrication techniques (e.g., fused filament fabrication (FFF) three-dimensional (3D) printing or molding), and can be manufactured into user-specific geometries.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: March 16, 2021
    Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
    Inventors: Jeffrey LaBelle, Steven Lathers
  • Patent number: 10943931
    Abstract: Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: March 9, 2021
    Assignee: X Display Company Technology Limited
    Inventors: Christopher Bower, Etienne Menard, Matthew Meitl, Joseph Carr
  • Patent number: 10911023
    Abstract: Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. An aluminum oxide etch-stop layer is sandwiched between the surface of the substrate and the back surface of the piezoelectric plate, a portion of the piezoelectric plate and the etch-stop layer forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. The aluminum oxide etch-stop layer is impervious to an etch process used to form the cavity.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: February 2, 2021
    Assignee: Resonant Inc.
    Inventor: Patrick Turner
  • Patent number: 10894712
    Abstract: An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: January 19, 2021
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Simon Joshua Jacobs
  • Patent number: 10884188
    Abstract: A method for creating a random anti-reflective surface structure on an optical fiber including a holder configured to hold the optical fiber comprising a groove and a fiber connector, an adhesive material to hold the optical fiber in the holder and fill any gap between the optical fiber and the holder, a glass to cover the adhesive material and the optical fiber, and a reactive ion etch device. The reactive ion etch device comprises a plasma and is configured to expose an end face of the optical fiber to the plasma. The plasma is configured to etch a random anti-reflective surface structure on the end face of the optical fiber.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: January 5, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jesse A. Frantz, Lynda E. Busse, Jason D. Myers, L. Brandon Shaw, Jasbinder S. Sanghera, Ishwar D. Aggarwal, Catalin M. Florea
  • Patent number: 10864270
    Abstract: Methods, systems, and devices are disclosed for fabricating and implementing nanoscale and microscale structured carriers to provide guided, targeted, and on-demand delivery of molecules and biochemical substances for a variety of applications including diagnosis and/or treatment (theranostics) of diseases in humans and animals. In some aspects, a nanostructure carrier can be synthesized in the form of a nanobowl, which may include an actuatable capping particle that can be opened (and in some implementations, closed) on demand. In some aspects, a nanostructure carrier can be synthesized in the form of a hollow porous nanoparticle with a functionalized interior and/or exterior to attach payload substances and substances for magnetically guided delivery and controlled release of substance payloads.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: December 15, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Ratneshwar Lal, Preston B. Landon, Alexander Mo
  • Patent number: 10864358
    Abstract: A medical delivery device includes a first compartment configured to hold a first substance. The first compartment includes a first wall that includes a first ferrous material, and the first wall is configured to disintegrate and release the first substance into a patient in response to first electromagnetic radiation received by the first ferrous material. The medical delivery device also includes a second compartment attached to the first compartment and configured to hold a second substance. The second compartment includes a second wall that includes a second ferrous material, and the second wall is configured to disintegrate and release the second substance into the patient in response to second electromagnetic radiation received by the second ferrous material.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: December 15, 2020
    Inventor: Bernard Fryshman
  • Patent number: 10866203
    Abstract: A stress sensor comprises: a diaphragm; an intermediate layer disposed on a surface of the diaphragm; a sensitive membrane disposed on the intermediate layer; and a piezoresistive element disposed in a region of the diaphragm in contact with an outer edge of the intermediate layer.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: December 15, 2020
    Assignee: KYOCERA Corporation
    Inventors: Kyohei Kobayashi, Ryo Ueno, Shinichi Abe, Hisashi Sakai, Masaru Nagata, Takanori Yasuda
  • Patent number: 10838366
    Abstract: A micro-electromechanical systems (MEMS) driving arrangement for an electronic device, the micro-electromechanical systems (MEMS) driving arrangement including a driven wheel; a driving actuation assembly for causing rotation of the driven wheel; an indicator assembly including an indicator; and a force absorbing assembly coupled intermediate the indicator assembly and the driven wheel; whereby a force acting upon the indicator assembly is absorbed by the force absorbing assembly so as to inhibit rotation of the driven wheel relative to the driving actuation assembly.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: November 17, 2020
    Assignee: Timex Group USA, Inc.
    Inventors: Wolfgang Burkhardt, Michail Subarew, Heiko Hellriegel, Helmut Zachmann
  • Patent number: 10802185
    Abstract: A transmissive optical element may include a substrate. The transmissive optical element may include a first anti-reflectance structure for a particular wavelength range formed on the substrate. The transmissive optical element may include a second anti-reflectance structure for the particular wavelength range formed on the first anti-reflectance structure. The transmissive optical element may include a third anti-reflectance structure for the particular wavelength range formed on the second anti-reflectance structure. The transmissive optical element may include at least one layer disposed between the first anti-reflectance structure and the second anti-reflectance structure or between the second anti-reflectance structure and the third anti-reflectance structure.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: October 13, 2020
    Assignee: Lumentum Operations LLC
    Inventors: John Michael Miller, Gonzalo Wills
  • Patent number: 10802045
    Abstract: A large radius probe for a surface analysis instrument such as an atomic force microscope (AFM). The probe is microfabricated to have a tip with a hemispherical distal end or apex. The radius of the apex is the range of about a micron making the probes particularly useful for nanoindentation analyses. The processes of the preferred embodiments allow such large radius probes to be batch fabricated to facilitate cost and robustness.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: October 13, 2020
    Assignee: Bruker Nano, Inc.
    Inventor: Jeffrey Wong
  • Patent number: 10801945
    Abstract: An inline particle sensor includes a sensor head configured to mount within a fitting, the sensor head including a laser source sealed and isolated from a sensing volume and configured to emit a laser beam through the sensing volume and a detector arranged to detect particles in the sensing volume that pass through the laser beam. The vacuum particle sensor further includes electronics coupled to the sensor head and configured to receive a signal indicative of the particles from the detector and provide a particle output based on the signal.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: October 13, 2020
    Assignee: CyberOptics Corporation
    Inventors: Felix J. Schuda, Ferris J. Chen