Abstract: Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.

Abstract: The invention discloses a display panel having a display region and a wire out region on one side of the display region, comprising: a first substrate including a main body part and a glue blocking part connected to the main body part, a thickness of the main body part being different from a thickness of the glue blocking part; a second substrate opposite to the first substrate; and a sealant arranged between the first substrate and the second substrate, and located between the display region and the wire out region, wherein the glue blocking part is located on one side of the sealant close to the wire out region. The thickness of the main body part of the first substrate in the display panel of the invention is different from the thickness of the glue blocking part, and before curing, the sealant does not spill into the wire out region due to obstruction action of the glue blocking part, thereby not affecting a peeling process of the panel after cutting.

Abstract: The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.

Abstract: A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

Abstract: A display device includes a first substrate, a first wavelength conversion layer and a second wavelength conversion layer disposed on the first substrate and spaced apart from each other, and a polarization layer disposed on the first wavelength conversion layer and the second wavelength conversion layer, the polarization layer including a reflection portion and a transmitting portion, in which the reflection portion overlaps a gap formed between the first wavelength conversion layer and the second wavelength conversion layer.

Abstract: Provided is a method of manufacturing a liquid ejection head, which is capable of patterning a dry film while suppressing deformation of the dry film caused by a pressure. The method of manufacturing a liquid ejection head includes: preparing a substrate including an ejection orifice member on a first surface; forming, on an ejection orifice surface of the ejection orifice member, a protection film having communicating holes for allowing ejection orifices to communicate to outside; closing an opening of a supply port on a second surface on a side opposite to the first surface of the substrate with a dry film; and patterning the dry film by irradiating the dry film with light under a state in which the protection film is formed on the ejection orifice surface.

Abstract: Patterning electronic devices using reactive-ion etching of tin oxides is provided. Reactive-ion etching facilitates patterning of tin oxides, such as barium stannate (BaSnO3), at a consistent and controllable etch rate. The reactive-ion etching approach described herein facilitates photolithographic patterning of tin oxide-based semiconductors to produce electronic devices, such as thin-film transistors (TFTs). This approach further patterns a tin oxide-based semiconductor without adversely affecting its electrical properties (e.g., resistivity, electron or hole mobility), as well as maintaining surface roughness. This approach can be used to produce optically transparent devices with high drain current (ID, drain-to-source current per channel width) and high on-off ratio.

Abstract: A modeling apparatus includes a stage, an irradiation unit, a moving mechanism, and a stage-rotating mechanism. The irradiation unit selectively irradiates a region of a material supplied onto the stage, with an energy ray. The moving mechanism relatively moves, at least in a stacking direction of the material, the stage and the irradiation unit. The stage-rotating mechanism rotates the stage.

Abstract: A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.

Abstract: The present invention provides a mask for manufacturing a TFT in a 4M production process and a TFT array manufacturing method of a 4M production process. For the mask for manufacturing a TFT in a 4M production process, in a TFT layout structure of the mask, a line pattern is provided adjacent to an outer edge of a TFT pattern to extend along the outer edge of the TFT pattern. The present invention also provides a corresponding TFT array manufacturing method of the 4M production process, which uses the mask of the present invention to serve as a mask for a second mask-based process. The mask for manufacturing a TFT in a 4M production process according to the present invention allows for achievement of an edge-thinned structure through variation of edge exposure of the mask so as to make plasma etching more easily performed on such a structure to thereby reduce residues of amorphous silicon and heavily-doped silicon on an edge of a second metal layer.

Abstract: A liquid ejection head includes an ejection hole surface where a plurality of nozzles ejecting liquid open. The ejection hole surface includes a nozzle arrangement region where the plurality of nozzles are arranged. Each nozzle includes an inversely tapered part where a cross-sectional area increases toward the ejection hole surface. A first nozzle is arranged at a center part of a predetermined direction of the nozzle arrangement region, while second nozzles are arranged at the end parts at the two sides in the predetermined direction. When viewed from the ejection hole surface side as “T”, the width of the first nozzle's inversely tapered part is larger than the widths of the inversely tapered parts of the second nozzles. In the nozzle arrangement region, the ejection hole surface includes a shape that the center part in the predetermined direction projects with respect to the end parts on the two sides.

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

Abstract: A process for performing localized corrective actions to structure of an electronic device is described. The structure may include a mating surface configured to receive another structure such that the two structures may be, for example, adhesively bonded together. The localized corrective actions are configured not to improve the mating surface but to also prevent light within the electronic device from escaping in undesired areas of the electronic device. In some embodiments, the corrective action includes using a removal tool to remove identified portions of the surface. In other embodiments, the corrective action includes using a different tool to add material identified portions of the surface. The identified means may include an automated inspection system.

Abstract: A mother substrate assembly according to an exemplary embodiment of the present invention includes: a first mother substrate and a second mother substrate formed with a plurality of unit liquid crystal panels; and a sealant formed between the first mother substrate and the second mother substrate and combining the mother substrates, wherein the sealant encloses a circumference of each unit liquid crystal panel, and includes a first irradiation line formed in the sealant, and a second irradiation line formed in the sealant of a side closer to the unit liquid crystal panel than the first irradiation line.

Abstract: A producing method includes a sealing agent disposing process of preparing substrates one of which has thin film patterns thereon and disposing sealing agent portions on the one substrate to surround the thin film patterns, respectively, a bonding process of bonding the substrates via the sealing agent portions and forming a bonded substrate after the sealing agent disposing process, a cutting process of cutting the substrates being included in the bonded substrate and outside the sealing agent portions after the bonding process, and a grinding process of grinding collectively the substrates and the sealing agent portions of the bonded substrate along the outline after the cutting process such that overlapped portions of the substrates and the sealing agent portion are partially ground collectively and ground surfaces of the substrates and the sealing agent portion are aligned with each other.

Abstract: An embossing material that can be hardened and used for embossing lithography, comprised of a mixture of: at least one polymerizable main component, and at least one secondary component. The invention also relates to a use of the embossing material for the primary forming of an embossing form.

Abstract: An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

Abstract: A method of forming a flexible display apparatus includes: forming a flexible substrate on a support substrate; forming a light-emitting diode on the flexible substrate; forming a first encapsulation layer on the light-emitting diode; forming a second encapsulation layer; bonding the first encapsulation layer to the second encapsulation layer using an adhesive layer between the first encapsulation layer and the second encapsulation layer; separating the support substrate from the flexible substrate and cutting the flexible substrate to form the flexible display apparatus; and forming a polarizing plate on the second encapsulation layer.

Abstract: An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

Abstract: A single display panel and an electronic device are provided. The single display panel comprises an upper substrate; a lower substrate including a display area and a stepped area; and a frame adhesive disposed between the upper substrate and the to a substrate, and surrounding the display area, wherein there is no blank area around the display panel. The single display panel is obtained from an array substrate comprising OLED display panels to be separated from each other through a cutting, wherein the display panel includes a display area, at least two adjacent display panels are connected through the frame adhesive disposed at an edge frame surrounding the display area but not covering the display area, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

Abstract: The problem to be solved by the present invention is to provide an electrochromic gel which is excellent in flexibility and which is stretchable, a method for producing the gel, a method for controlling electronic printing and erasing, and a stretchable display. The problem is solved by using an electrochromic gel obtained by laminating an electrolyte-containing gel layer consisting only of an electrolyte-containing gel and an organic-metallic hybrid polymer-containing layer obtained by containing an organic-metallic hybrid polymer in the electrolyte-containing gel.

Abstract: A method of forming a flexible display apparatus includes: forming a flexible substrate on a support substrate; forming a light-emitting diode on the flexible substrate; forming a first encapsulation layer on the light-emitting diode; forming a second encapsulation layer; bonding the first encapsulation layer to the second encapsulation layer using an adhesive layer between the first encapsulation layer and the second encapsulation layer; separating the support substrate from the flexible substrate and cutting the flexible substrate to form the flexible display apparatus; and forming a polarizing plate on the second encapsulation layer.

Abstract: An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

Abstract: Provided is a thin film transistor array panel. The thin film transistor array panel includes: an insulation substrate including a display area with a plurality of pixels and a peripheral area around the display area; a gate line and a data line positioned in the display area of the insulation substrate; a first driving signal transfer line and a second driving signal transfer line positioned in the peripheral area of the insulation substrate; a first insulating layer positioned on the gate line and the data line; and a first photosensitive film positioned on the first driving signal transfer line and the second driving signal transfer line, in which the first photosensitive film is disposed only in the peripheral area.

Abstract: In an exemplary display device of the present invention, a first microcavity filled with liquid crystal molecules is disposed on a substrate. A roof layer is disposed on an upper side and two facing first sides of the first microcavity. The two facing first sides are arranged in a first direction. A support member is disposed on one of two facing second sides of the first microcavity. The two facing second sides are arranged in a second direction crossing the first direction. An overcoat is disposed on the roof layer and the other of the two facing second sides of the first microcavity. The support member having a column shape is connected to the roof layer.

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.

Abstract: A method of manufacturing a liquid crystal display panel including forming a pixel electrode including first nano-conductive lines extending in a first direction on a first base substrate and arranged in a second direction substantially perpendicular to the first direction, disposing a second base substrate above the first base substrate, and forming a liquid crystal layer on the first nano-conductive lines, which is aligned by the first nano-conductive lines.

Abstract: Electronic circuit device and method for conveying clock signal in an electronic circuit device. The electronic circuit device includes: a cooling fluid conduit network including at least one conduit, wherein the cooling fluid conduit network is configured to convey both a cooling fluid and an electromagnetic signal via the at least one conduit; a clock signal injection unit configured to inject an electromagnetic clock signal at an input location of the cooling fluid conduit network; and a clock signal collection unit configured to collect an electromagnetic clock signal.

Abstract: A method of forming a flexible display apparatus includes: forming a flexible substrate on a support substrate; forming a light-emitting diode on the flexible substrate; forming a first encapsulation layer on the light-emitting diode; forming a second encapsulation layer; bonding the first encapsulation layer to the second encapsulation layer using an adhesive layer between the first encapsulation layer and the second encapsulation layer; separating the support substrate from the flexible substrate and cutting the flexible substrate to form the flexible display apparatus; and forming a polarizing plate on the second encapsulation layer.

Abstract: A method of fabricating a display panel from a thin substrate using a carrier substrate is disclosed. The method includes depositing a bonding agent on a first surface of the thin substrate; depositing a bonding agent on a second surface of the carrier substrate; bonding the thin substrate and the carrier substrate with the bonding agent deposited on the first surface and the second surface; performing thin film processing on a third surface of the thin substrate opposite the first surface; and separating the processed thin substrate from the carrier substrate. The thin substrate has a thickness less than a required thickness for sustaining thin film processing while a thickness of the bonded thin substrate and the carrier substrates is greater than or equal to that the required thickness.

Abstract: A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.

Abstract: Embodiments of the invention provide a display substrate and a manufacturing method thereof, and a display device. The display substrate includes a display region and a sealant coating region provided outside the display region, and the sealant coating region is provided with a groove to limit a sealant.

Abstract: A cover glass element can extend to the edges of an electronic device while maintaining the optical flatness and thickness needed for the cover glass. A first glass sheet with the desired thickness and flatness can be thermally bonded to a second glass sheet machined to include an opening to be received by the edges of the electronic device. The resulting three-dimensional cover element forms a uni-body frame that is significantly stiffer than a single sheet of glass, and the larger surface area of the edge provides for enhances pressure distribution, particularly after chemical strengthening, thus enhancing the durability of the electronic device. Further, the thermal bonding process uses lower temperatures than processes such as slumping or pressing, which could potentially affect the flatness and optical clarity of the original sheet glass.

Abstract: A pixel in the panel includes sub-pixels 100a, 100b, and 100c. The sub-pixel 100a is defined by banks 105a and 105b. The sub-pixel 100b is defined by banks 105b and 105c. The sub-pixel 100c is defined by banks 105c and 105d. Organic light-emitting layers are formed in sub-pixels by, for each pixel, applying ink to the sub-pixels 100a, 100b, and 100c in the stated order and drying the applied ink. With regard to a sidewall 105aa of the bank 105a, sidewalls 105ba and 105bb of the bank 105b, and a sidewall 105cb of the bank 105c, inclination angles of the sidewalls satisfy relationships: inclination angle ?aa and inclination angle ?ba are equal, and inclination angle ?cb is larger than inclination angle ?bb.

Abstract: The present invention relates to an additive mixture comprising a polyacrylate salt, an acid ester, and a defoamer agent. A polishing composition and a polishing method used for polishing a glass substrate are also provided.

Abstract: A method for fabricating a patterned dichroic film is provided, wherein the method comprises steps as follows: A patterned material layer comprising at least one inorganic layer is firstly provided on a substrate. A film deposition process is then performed to form a dichroic film on the patterned material layer and the substrate. The patterned material layer is subsequently removed, whereby a portion of the dichroic film disposed on the patterned material layer can be removed simultaneously.

Abstract: A mother substrate for a liquid crystal display device includes: a substrate; a plurality of unit array patterns on the substrate, each of the plurality of unit array patterns including a gate line, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line and a pixel electrode connected to the thin film transistor; a first electrostatic discharge pattern surrounding the plurality of unit array patterns; a second electrostatic discharge pattern connected to the gate line and crossing the first electrostatic discharge pattern; and a third electrostatic discharge pattern connected to the data line and crossing the first electrostatic discharge pattern, the third electrostatic discharge pattern contacting the second electrostatic discharge pattern.

Abstract: The present disclosure provides a liquid crystal displaying panel, which includes a first substrate having a displaying area and a sealant-coating area surrounding the displaying area and a light-blocking layer arranged between the displaying area and the sealant-coating area. The light-blocking layer can absorb and block ultraviolet light to prevent the ultraviolet light from affecting the liquid crystal layer. Additionally, the light-blocking layer and the pixel electrode layer are formed in the same process, that is, the light-blocking layer is simultaneously formed when the pixel electrode layer is formed. A thickness of the light-blocking layer is equal to that of the pixel electrode layer. Since the thickness of the light-blocking layer is equal to that of the pixel electrode layer, the pixel electrode layer and the light-blocking layer can be formed in the same process, which simplifies the manufacturing process of the light-blocking layer and the needed equipment.

Abstract: Provided is a touch panel manufacturing method wherein the number of exposure masks needed for pattern formation is reduced, and a method for manufacturing a display device provided with a touch panel. A transparent conductive film layer (11) and a metal layer (12) are laminated on a transparent substrate (1), and the transparent conductive film layer (11) and the metal layer (12) are formed into predetermined electrode patterns, with use of one resist pattern. A protective film (13) covering the transparent conductive film layer (11) and the metal layer (12) is formed, and openings (14, 15, and 16) are provided at predetermined positioned in the protective film (13). By etching with use of the protective film (13) having the openings (14, 15, and 16), the metal layer (12) is removed so that the transparent conductive film layer (11) is exposed, whereby at least either touch electrodes (2) or connection terminals (5) are formed.

Abstract: A tunable liquid crystal optical device defining an optical aperture and having a layered structure. The device includes a film electrode formed on a surface of a first substrate and covered by a second substrate, and a contact structure filling a volume within the layered structure and contacting the film electrode. The contact structure is located outside of the optical aperture and provides an electrical connection surface much larger than a thickness of the film electrode, such that reliable electrical connections may be made to the electrode, particularly in the context of wafer scale manufacturing of such a device.

Abstract: Fabrication of thin sheets of glass or other substrate material for use in devices such as touch sensor panels is disclosed. A pair of thick glass sheets, typically with thicknesses of 0.5 mm or greater each, may each be patterned with thin film on a surface, sealed together to form a sandwich with the patterned surfaces facing each other and spaced apart by removable spacers, either or both thinned on their outside surfaces to thicknesses of less than 0.5 mm each, and separated into two thin glass sheets. A single thick glass sheet, typically with a thickness of 0.5 mm or greater, may be patterned, covered with a protective layer over the pattern, thinned on its outside surface to a thickness of less than 0.5 mm, and the protective layer removed. This thinness of less than 0.5 mm may be accomplished using standard LCD equipment, despite the equipment having a sheet minimum thickness requirement of 0.5 mm.

Abstract: A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion.

Abstract: A method of manufacturing a transparent conductive film has the steps of: preparing a laminated body in which a transparent conductive layer that is not patterned is formed on a flexible transparent base, removing a part of the transparent conductive layer to form the pattern forming part having the transparent conductive layer on the flexible transparent base and the pattern opening part not having the transparent conductive layer on the flexible transparent base, and heating the laminated body in which the transparent conductive layer is patterned. The absolute value of the difference H1-H2 of the dimensional change rate H1 of the pattern forming part and the dimensional change rate H2 of the pattern opening part in the heat treatment step is preferably less than 0.03%.

Abstract: Disclosed is an end point detecting method of metal etching and a device thereof. The end point detecting method of metal etching comprises: performing scan to a metal film to acquire a proportion of a transparency area of the metal film in a scanned area; judging whether the proportion of the transparency area reaches a predetermined value or not; and confirming a current etching time of the metal film as an etching end point time when the predetermined value is reached. The device comprises an acquirement module, a judgment module and a confirmation module. The acquirement module performs scan to the metal film to acquire the proportion of the transparency area. The judgment module judges whether the proportion reaches the predetermined value or not. The confirmation module confirms the current etching time of the metal film as the etching end point time when the proportion reaches the predetermined value.

Abstract: Disclosed embodiments relate to signal routings for use in a display device. The display device may include a liquid crystal display (LCD) panel having multiple pixels arranged in rows and columns. Each of the pixels includes a pixel electrode and a thin-film transistor (TFT). The LCD may include a conductive signal routing portion having a first metallic layer, a second metallic layer formed directly on the first metallic layer, and a third metallic layer formed directly on the second metallic layer. The first metallic layer may include a contact terminal. The second metallic layer when combined with the third metallic layers may decrease the resistance of the third metallic layer.

Abstract: In one embodiment, a first substrate having a plurality of array regions is prepared. A seal material is formed in each of the array regions. A peripheral seal material is arranged outside the array regions extending in a first direction. The peripheral seal material has an exhaust opening provided at a portion of the peripheral seal material extending in a second direction. A dummy seal material is formed between the peripheral seal material extending in the first direction and the seal material formed in the array region. A second substrate is arranged on a surface of the first substrate in a jig. The inside of the jig is decompressed, and the atmosphere between the first and second substrates is exhausted while applying a pressure to the first and second substrates. Then, the first and second substrates are attached by curing the seal material, the peripheral seal material and the dummy seal material.

Abstract: A magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element. The first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer.

Abstract: In one embodiment, a first substrate including first and second array regions are prepared. The first and second array regions respectively include first and second active areas. A peripheral seal material having an air intake opening is arranged outside the first and second array regions. A second substrate is arranged on the surface of the first substrate in which the first and second seal materials and peripheral seal material are formed in a vacuum chamber under vacuum state. Atmosphere is introduced into the vacuum chamber and a space between the first and second seal materials from the air intake opening. Then, a pressure is applied to the first and second substrates by pressure difference between the atmospheric pressure of circumference which surrounds the first substrate and second substrate, and the atmospheric pressure of the space between the first substrate and second substrate.

Abstract: A method of fabricating a thin liquid crystal display device including a glass substrate having a flat surface. The method includes etching at least one surface of a liquid crystal display, panel, and grinding the surface of the liquid crystal display panel so as to planarize the etched liquid crystal display panel.