Abstract: This invention consists of transforming a liquid crystal flat screen, normally designed to operate in transmissive mode, to enable it to operate in reflective mode so as to consume less energy. To do this, some screen elements inserted between the liquid crystal layer (3) and the reflector (9) must satisfy a specific relation.

Abstract: An in-line system for fabricating a liquid crystal display includes a sealer coating unit for coating a sealer onto a first substrate with a plurality of liquid crystal display cell regions, a liquid crystal injection unit for dropping a liquid crystal onto the first substrate coated with the sealer, and an assembly unit for assembling the first substrate with the second substrate. A sealer hardening unit hardens the sealer interposed between the first and the second substrate to thereby assemble the first and the second substrate with each other. A substrate cutting unit cuts the first and the second substrates along cutting lines through illuminating a laser beam along the cutting lines such that the first and the second substrates are severed into the liquid crystal display cell regions.

Abstract: A method for parting a laminated substrate used for a liquid crystal cell and a parting device are provided which are capable of obtaining, at a time of the parting, a parting line being vertical to a face on which a scribe line is formed, thus enabling prevention of a failure in the parting of the laminated substrate. To part the laminated substrate made of a first substrate and a second substrate into a plurality of substrates used for the liquid crystal cell, the scribe line is formed on one substrate out of the first substrate and second substrate along a boundary of the substrate used for the liquid crystal cell and multiple parting force is applied by timesharing to the other substrate out of the first and second substrates along the scribe line.

Abstract: A method of generating ejection pattern data for a plurality of nozzles for use in selectively ejecting functional liquid droplets from the nozzles is to draw on ore more one chip-forming area on a workpiece. The method includes a pixel-setting step of setting pixel information concerning an array of pixels in the chip-forming areas, a chip-setting step of setting chip information concerning an array of the chip-forming areas on the workpiece, a nozzle-setting step of setting nozzle information concerning an array of the nozzles, and a data-generating step of generating the ejection pattern data for the nozzles from the pixel information, the chip information, and the nozzle information, based on a positional relationship between the workpiece and the functional liquid droplet ejection head. The ejection pattern data are easily and quickly generated for the nozzles arranged in an array in the plurality of functional liquid droplet ejection heads.

Abstract: An etchant for patterning indium tin oxide, wherein the etchant is a mixed solution of HCl, CH3COOH, and water, and a method of fabricating a liquid crystal display device are disclosed in the present invention. The method includes forming a gate electrode on a substrate, forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate, forming an active area by patterning the amorphous silicon layer, forming a source electrode and a drain electrode on the active area, forming a passivation layer on the source electrode and the drain electrode and the gate insulating layer, forming a contact hole exposing a part of the drain electrode, forming an indium tin oxide layer on the passivation layer, and forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH, and water as an etchant.

Abstract: This abstract describes two new improvements in present production lines through use of laser-pierced smaller diameter holes in spinnerets through which viscous fluids flow and the addition of continuous wave or pulsed sonic generators at the rear of spinneret housings both of which produce irregularities in the surfaces of the smooth continuous synthetic filaments (nylon and kevlar for examples) to produce yarns and cords with increased cord-to-rubber bonding thus reducing tread separation in tries. The acid etching of steel wire used in tire manufacturing also increases wire-to-rubber bonding with further reductions in tread separation and increased tire life.

Abstract: A method of manufacturing a ridge-shaped 3-dimensional waveguide, has the steps of: forming a crystal film made of a second ferroelectric oxide non-linear crystal having a refractive index higher than that of a substrate made of a first ferroelectric oxide non-linear crystal on the substrate; forming a metal film on the crystal film; forming a mask by etching the metal film; and forming a ridge portion by selectively removing the crystal film through the mask by a dry etching method.

Abstract: A flat display device, preferably of the PALC type, in which the plasma channels are formed by etching laterally-spaced slots in a spacer plate, attaching a thin dielectric sheet over the etched spacer plate, and bonding the etched spacer plate to a transparent substrate such that each channel is formed by the portion of the substrate between flanking walls formed by the etched slots in the spacer plate, adjacent flanking walls in the spacer plate, and the overlying portion of the thin dielectric sheet. In a modification, strengthening crossbars are formed between adjacent flanking walls.

Abstract: A method for parting a laminated substrate used for a liquid crystal cell and a parting device are provided which are capable of obtaining, at a time of the parting, a parting line being vertical to a face on which a scribe line is formed, thus enabling prevention of a failure in the parting of the laminated substrate. To part the laminated substrate made of a first substrate and a second substrate into a plurality of substrates used for the liquid crystal cell, the scribe line is formed on one substrate out of the first substrate and second substrate along a boundary of the substrate used for the liquid crystal cell and multiple parting force is applied by timesharing to the other substrate out of the first and second substrates along the scribe line.

Abstract: Disclosed are an apparatus for etching or stripping a substrate of a liquid crystal display device and a method thereof. The present invention includes carrying out an etching or stripping process on substrates using an etchant in a first etchant tank, counting a number of the substrates etched or stripped using the etchant in the first etchant tank, checking readiness of a second etchant tank at a predetermined point in time before the counted number reaches a maximum substrate number set up previously for the etchant tanks, and carrying out the etching or stripping process on the substrates using an etchant in the second etchant tank when the second etchant tank is in readiness for use and the counted number reaches the maximum substrate number.

Abstract: A method of fabricating a thin liquid crystal display device including a glass substrate having a flat surface. The method includes etching at least one surface of a liquid crystal display, panel, and grinding the surface of the liquid crystal display panel so as to planarize the etched liquid crystal display panel.

Abstract: An electrode plate is formed by a substrate and a plurality of patterned electrodes formed on the substrate. Each patterned electrode has a laminate structure including a first layer of nickel metal formed on the substrate and a second layer of copper formed thereon. The electrode plate may be prepared by a process including a step of etching such a multi-layer metal electrode-forming film formed on a substrate by spraying an etchant downwardly and uniformly onto the substrate while rotating the substrate at a rotation speed sufficient to allow quick liberation of the etchant from the substrate. The metal electrodes can be formed with good adhesion onto the substrate and with good width and thickness accuracy. By incorporating the electrode plate as a pair of substrates sandwiching a liquid crystal, a liquid crystal device free from transmission delay and rounding of voltage waveforms can be provided.

Abstract: In a partially formed liquid crystal display device, a window definition layer defines an etching endpoint detection window over a dummy pattern formed on the substrate. The window definition layer also defines an etch window over a real pattern formed on the substrate. The real pattern and the dummy pattern have the same thickness. During an etching process, a reactant from the etching step is monitored to determine when to stop the etching process.

Abstract: An etching system and method. In the method, layers are etched on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, wherein an etching period varies according to an accumulated process number of substrates. The system includes an etching equipment including an etching processor for etching layers on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, and a loader for temporarily holding cassettes in which the substrates are stored; and a controller for controlling operations of the etching equipment. The etching equipment changes an etching period according to an accumulated process number of the substrates.

Abstract: A method has been provided for etching adjoining layers of indium tin oxide (ITO) and silicon in a single, continuous dry etching process. A conventional dry etching gas, such as H1, is used to etch ITO using RF or plasma energy. When the silicon layer underlying the ITO layer is reached, oxygen or nitrogen is added to etching gas to improve the selectivity of ITO to silicon. In some aspects of the invention an etch-stop layer is formed in the silicon layer. A specific example of fabricating a bottom gate thin film transistor (TFT) is also provided where adjoining layers of source metal, ITO, and channel silicon are etched in the same dry etch step.

Abstract: A printer head substrate having a silicon substrate on which heat generating elements and partitions are formed and an orifice plate which adhered to the partitions is placed on a stage of a helicon-wave dry etching system. Helicon-wave dry etching is performed while cooling the printer head substrate by allowing a coolant gas to be intervened between the substrate and the stage. This allows multiple orifices of a desired and adequate shape to be simultaneously and quickly bored in the orifice plate even if a thin film sheet having adhesive layers adhered to both sides thereof is used as the orifice plate, thereby improving the working efficiency.

Abstract: A process for providing a metal-seeded liquid crystal polymer comprising the steps of providing a liquid crystal polymer substrate to be treated by applying an aqueous solution comprising an alkali metal hydroxide and a solubilizer as an etchant composition for the liquid crystal polymer substrate. Further treatment of the etched liquid crystal polymer substrate involves depositing an adherent metal layer on the etched liquid crystal polymer substrate. An adherent metal layer may be deposited using either electroless metal plating or vacuum deposition of metal such as by sputtering.

Abstract: A method of etching a trench in a substrate using a dry plasma etch technique that allows precise control of lateral undercut. The method includes optionally forming at least one on-chip device or micro-machined structure in a surface of a silicon substrate, and covering the surface with a masking layer. A trench pattern is then imaged in or transferred to the masking layer for subsequent etching of the substrate. Upper portions of the trench are anisotropically etched in the substrate. The trench is then semi-anisotropically etched and isotropically etched in the substrate. By modifying isotropic etching time, a controlled lateral undercut can be achieved as the trench is etched vertically in the substrate.

Abstract: Etching method applicable to a semiconductor device fabrication and an MEMS(Micro-Electro-Mechanical System) process, including the steps of forming an etching mask on a substrate, forming a plurality of patterns in the etching mask corresponding to depths of the plurality of trenches; and etching the substrate using the etching mask having the plurality of patterns formed therein, whereby eliminating an alignment error in respective photolithography, that permits to form a precise structure, simplify a fabrication process, and reduce a production cost.

Abstract: This invention comprises an inspection method conducted by rotary-coating a photoresist on the surface of a semiconductor substrate, irradiating ultraviolet rays using an exposure instrument such as a stepper, exposing the entire photoresist, removing the exposed photoresist using an alkali developing solution, and irradiating a laser beam onto the semiconductor substrate to detect foreign substances through the scattered light. Accordingly, gel foreign substances remain on the semiconductor substrate even after the steps of exposure and development, so that their presence can be detected surely. Furthermore, this invention provides a method and an apparatus of surely detecting gel foreign substances which are present in a photoresist film or between patterns by exposing the photoresist and performing etching and ashing, using gel foreign substances which remained through the development as a mask.

Abstract: An etching system and method. In the method, layers are etched on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, wherein an etching period varies according to an accumulated process number of substrates. The system includes an etching equipment including an etching processor for etching layers on a plurality of substrates using a single amount of etchant to form a predetermined pattern on each of the layers, and a loader for temporarily holding cassettes in which the substrates are stored; and a controller for controlling operations of the etching equipment. The etching equipment changes an etching period according to an accumulated process number of the substrates.

Abstract: A thin film made of an amorphous material having a supercooled liquid phase region is formed on a substrate. Then, the thin film is processed by wet-etching, etc. to form a thin film-processed body having, for example, a one side-fixed beam like shape. Subsequently, the thin film-processed body is heated to a temperature within the supercooled liquid phase region and held at the temperature for 0.5-5 minutes. Thereafter, the thin film-processed body is cooled down to room temperature. Then, at least a part of the substrate is removed by wet-etching, etc. to form a thin film-planar structure composed of the thin film-processed body having the one side-fixed beam like shape.

Abstract: An object of the present invention is to provide a method for producing a display device by which a substrate is thinned efficiently. Onto one original substrate having an area for a plurality of display devices, the other original substrate is bonded via a sealing resin layer, the pair of bonded original substrates is divided and separated into a plurality of pairs of substrates of a size of each individual display device, and thereafter a substrate thinning process of thinning the substrates is performed in a state where the substrates are held by substrate holding means.

Abstract: A gas discharge display device comprising a front side substrate having a plurality of first electrodes and a back side substrate having a plurality of second electrodes, wherein at least said first electrodes or second electrodes are formed by wet etching using a resist made of an inorganic material, is excellent in the ability to suppress the breakage of wiring in electrodes.

Abstract: The present invention is directed to a method of etching a compound metal oxide film containing plural kinds of metallic element, such as Ba, Sr, Ti or the like. A first cleaning step employing Cl2 gas is carried out in order to remove alkaline earth metal (Ba, Sr) from the film, then a second cleaning step employing ClF3 gas is carried out in order to remove a metal (Ti) other than the alkaline earth metal from the film. The etching method is applicable not only to the etching process in the semiconductor manufacturing but also to the cleaning process for cleaning the processing vessel for film deposition.

Abstract: A method of the invention for forming a pixel-defining layer on an OLED panel is disclosed.

Abstract: A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n+1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Abstract: A method for manufacturing a planar reflective light valve backplane includes the steps of providing a substrate (e.g., a reflective backplane) including a plurality of surface projections (e.g., pixel mirrors) defining gaps therebetween, forming an etch-resistant layer on the substrate, forming a fill layer on the etch resistant layer, and etching the fill layer to expose portions of the etch resistant layer overlying the projections, leaving a portion of the fill layer in the gaps. A particular method includes an optional step of forming a protective layer over the exposed portions of the etch-resistant layer and the fill layer. In another particular method, the etch resistant layer includes an optical thin film layer and an etch-resistant cap layer.

Abstract: Dry etching of a metal oxide film exposed without being coated with a photoresist is carried out with plasma of a gas obtained by mixing hydrogen iodide with at least one gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases, and then after the exposing of the above mentioned photoresist film to plasma of oxygen gas, the remaining photoresist film is removed by etching with plasma of a gas obtained by mixing oxygen gas with at least one gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases.

Abstract: A gas discharge display device comprising a front side substrate having a plurality of first electrodes and a back side substrate having a plurality of second electrodes, wherein at least said first electrodes or second electrodes are formed by wet etching using a resist made of an inorganic material, is excellent in the ability to suppress the breakage of wiring in electrodes.

Abstract: A plurality of reflectors respectively having the same rough reflecting surfaces are formed substantially simultaneously on a transparent substrate of a large area. A photosensitive resin film is formed on a surface of a transparent substrate. An embossing die having a rough working surface is pressed against a photosensitive resin part of the photosensitive resin film and the photosensitive resin part is irradiated with ultraviolet rays from below the transparent substrate to form a prehardened photosensitive resin part. Those steps are repeated to form a plurality of prehardened, embossed photosensitive resin parts on the transparent substrate, and then parts not prehardened of the photosensitive resin film are removed by etching. The prehardened, embossed photosensitive resin parts are heated for hardening, and a metal reflecting film is formed on the hardened embossed photosensitive resin parts to complete a plurality of reflectors.

Abstract: A method for manufacturing a device includes the steps of forming a layer on a substrate and patterning an etching end point detection area in the layer in accordance with a designed pattern including an etching end point detection part.

Abstract: An electron-emitting device is fabricated by a process in which particles (46) are distributed over an initial structure. The particles are utilized in defining primary openings (52, 64, or 78) that extend through a primary layer (50A, 62A, or 72) provided over a gate layer (48A, 60A, or 60B) formed over an insulating layer (44) and in defining corresponding gate openings (54, 66, or 80) that extend through the gate layer. The insulating layer is etched through the primary and gate openings to form corresponding dielectric openings (56 or 68) through the insulating layer down to a lower non-insulating region (42). Electron-emissive elements (58A or 70A) are formed over the lower non-insulating region so that each electron-emissive element is at least partially situated in one dielectric opening.

Abstract: A method for manufacturing a gelatin-coated glass panel is described. In this, gelatin is first applied onto a glass panel, then a protective layer is sputtered on through a mask placed onto the gelatin layer. After removal of the mask, the gelatin can be removed, with the aid of a dry etching method, from the regions in which it is not equipped with a protective layer. The glass panel can then easily be divided by scoring and breaking. The method makes it possible to produce, on a large-scale production basis, liquid crystal displays which have either a color filter or a black matrix made of photoemulsion.

Abstract: The present invention enables efficient microfabrication of a fully integrated liquid crystal display device. Initially, a sacrificial layer is formed on a substrate that has conductive pads connected thereto. The sacrificial layer is patterned, and portions of the sacrificial layer are removed to expose portions of the underlying layer supporting the sacrificial layer. Then, a permeable layer is formed on the sacrificial layer, thereby filling in the space vacated by the removed potions of the sacrificial layer. The structure is heated and the material of the sacrificial layer is allowed to dissolve into and dissipate through the permeable layer in order to leave a cavity. Once the sacrificial layer is removed, the permeable layer is supported by the portion of the permeable layer filling in the space vacated by the removed portions of the sacrificial layer.

Abstract: A method for fabricating a passivation layer. An isolation layer is formed on a metal layer over the substrate. The isolation layer on the metal layer is removed by chemical-mechanical polishing and dry etching. The planarization of the metal layer thus is obtained. A passivation layer having a certain structure and a thickness combination of different layers is formed over the substrate. The reflection rate of the metal layer is significantly enhanced.

Abstract: A first glass substrate which is in contact with a liquid crystal layer is etched from its outer face. In this case, a panel to be etched is disposed on a susceptor with the first glass substrate being directed toward a shower head. The etching is carried out by uniformly spraying etchant from the shower head onto a face of the glass substrate.

Abstract: On the surface of an insulating substrate 1 on which a transistor is formed, a first interlayer insulation film 8 is provided, and a first contact hole 9 and a metal interconnection layer 10 are formed. A second interlayer insulation film 11 is formed covering the above items, and a second contact hole 12 and a barrier metal 13 are formed. After a first hole 14 for bonding pad is formed, a third interlayer insulation film 15 is provided, and then a third contact hole 16 and a second hole 17 for bonding pad are formed. A transparent electro-conductive film 18 is formed covering the holes 14, 16 and 17. After that, a portion of the transparent electro-conductive film 18 locating above the holes 14, 17 for bonding pad is removed to have the metal interconnection layer 10 exposed. The exposed metal interconnection layer 10 is used as bonding pad 20. This contributes to reliable bonding of bonding wires onto the bonding pad.

Abstract: A method for forming a contact hole in an active matrix substrate, the method comprising steps of: (a) depositing an insulating film covering a first electrode provided on a substrate and the substrate; (b) forming a contact hole by patterning said insulating film by means of dry etching; and (c) forming a second electrode, and contacting the second electrode with the first electrode; wherein in the step (b) after forming a contact hole by dry etching, a surface treatment by plasma etching or reactive ion etching with oxygen gas under a condition in which a pressure P is in a range of 100 Pa to 400 Pa is performed.

Abstract: An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than 100% and where the sum x+y fills the remainder of the 100%, and a mixture of the preceding ones of the group members. A reactive gas including a halogen-containing compound and an oxygen-containing compound is supplied to a vicinity of the material layer. Also, an electric field is supplied to react the supplied reactive gas with the material layer so as to form volatile byproducts of reactive gas and the material layer.

Abstract: A channel member for a PALC panel is fabricated from a substrate of hard transparent material by forming a layer of conductive material over an upper surface of the substrate, forming a layer of insulating material over the layer of conductive material, removing the layer of insulating material in accordance with a predetermined spatial pattern so as to expose predetermined portions of the layer of conductive material, and removing exposed portions of the layer of conductive material by erosion until parts of the upper surface of the substrate are exposed.

Abstract: A method of manufacturing a liquid crystal display device utilizing a substrate (#110) divided into display (#120) and non-display areas (#130). Within the display area of the substrate, a first layer is formed preferably including at least a switching element (#131) and output electrode (#180b). A second layer (#155) is formed on the first layer, preferably containing a material with an Si bonding structure, to act as a protection layer and to cover the display and non-display areas of the substrate. A photoresist (#160) is coated over the second layer, exposed to an ultraviolet light using a mask having a pattern for forming a contact hole (#137) at the display area of the substrate and an etching end point detection part (#500) at non-display area of the substrate, and developed. An enchant is injected an to react with portions of the protection layer, that are exposed through the pattern, to remove these exposed portions of the protection layer and resulting in the generation of a reproducible gas.

Abstract: A process for producing an electronic device having a silicon nitride film on a substrate is provided which comprises steps of forming a silicon nitride film and a silicon oxide film on a first face and a second face reverse to the first face of the substrate respectively, removing the silicon oxide film on the first face by wet etching, removing the silicon nitride film on the first face by wet etching, and removing the silicon oxide film on the second face by wet etching.

Abstract: An apparatus for removing unnecessary matter formed on an edge portion of a substrate without damaging a middle area of a top face of the substrate is provided. The substrate is supported on a stage which is in contact only with a bottom face of the substrate. An activated gas supply device is located opposed to the stage and includes a ring-shaped electrode and a cover electrode surrounding the ring-shaped electrode. The cover electrode includes a gas outlet formed therethrough. Activated species and excited molecules formed from an atmospheric plasma are blown against the edge portion of the substrate through the gas outlet. The activated species and excited molecules and unnecessary matter removed form the edge portion of the substrate through reaction with the activated species and excited molecules, is exhausted along a side face of the edge portion of the substrate and away from the middle area through an exhausting device.

Abstract: A method of manufacturing an LCD on a substrate, the method comprising the steps of forming a thin film transistor on the substrate; forming an organic passivation layer over the thin film transistor; forming a patterned photoresist over the organic passivation layer; etching the organic passivation layer to form a contact hole over one of source and drain of the transistor; removing the photoresist; forming an SiO.sub.2 layer at a surface of the organic passivation layer by O.sub.2 ashing; and forming a pixel electrode contacting one of the source and drain of the transistor through the contact hole.

Abstract: A flat panel display or other large-area electronic device comprises at least one TFT (T1;T2) having a crystalline channel region (1) and amorphous edge regions (13) adjacent side-walls (12) of the TFT island (11). The TFT is fabricated by steps which include:(a) depositing on substrate (10) a thin film (11') of amorphous semiconductor material to provide the semiconductor material,(b) removing areas of the thin film (11') to form the side walls (12a, 12b) of each island (11),(c) forming a masking pattern 20 over the edge regions (13a, 13b) preferably on an insulating film 22, and(d) directing a laser or other energy beam (50) towards the islands (11) and the masking pattern (20) to crystallise the un-masked semiconductor material for the crystalline channel region (1), while retaining amorphous semiconductor material adjacent the side walls (12a, 12b) where the edge regions (13a, 13b) are masked from the energy beam (50) by the masking pattern (20). The resulting device structure has e.

Abstract: A method of repairing severed or damaged data transmission lines of an imager provides a shunt path around the electrical defect in the data transmission line by means of a diode common transmission line. The repair shunt includes a first scan line segment, a common electrode segment, and a second scan line segment, which segments are fused together and to the data line having the electrical defect to bypass the electrical defect. The respective conductive lines are fused together with spot welds formed with the application of a laser. A repaired imager has a data line having an open circuit defect, with respective first and second portions of said data line being coupled to a repair shunt comprising an associated pixel scan line segment and a common electrode segment. In one embodiment of the present invention, a plurality of spot welds are provided in the imager array, each in its unwelded state but capable of being welded by the application of heat.

Abstract: A wiring according to the present invention is made of a chromium layer and a chromium nitride layer. To make the wiring, a layer of chromium is deposited on a substrate, and then a layer of chromium nitride is deposited. A layer of photoresist is covered on the layer of chromium nitride and patterned, the layers of chromium and chromium nitride are wet etched in sequence using the photoresist pattern as a mask. Since the layer of chromium nitride is etched more quickly than the layer of chromium, the layer of photoresist and the layer of chromium are separated from each other and the chromium layer is isotropically etched to form a pattern having an edge with a gentle slope.

Abstract: There is provided a technique which prevents semiconductor devices under fabrication from being destroyed by pulse-like high potentials applied by plasma without adding any special fabrication step. A first line extending to a gate electrode of a thin film transistor is formed. A first insulation film is formed on the first line. A second line connected to a source region of the thin film transistor is formed on the insulation film. A second insulation film is formed on the second line. Then, a conductive pattern is formed on the second insulation film. A discharge pattern is formed the first and/or second line, and the first and/or second line is cut simultaneously with the formation of the conductive pattern.

Abstract: A liquid crystal display apparatus has a junction panel obtained by joining a plurality of liquid crystal display panels so that display surfaces of the liquid crystal display panels become flush. The liquid crystal display panels each have picture elements for displaying images by transmitting and shielding a transmitting light, a black matrix for shielding a light which enters a position where the picture elements do not exist and a zonal sealing member for sealing liquid crystal into each picture element. A width of the sealing member on the junction surface where the liquid crystal display panels are joined is set so as to be narrower than a width of the black matrix. Joints of displayed images on a border of the liquid crystal display panels of the junction panel can be made inconspicuous, and quality of displayed images on the junction panel which is a big screen can be improved.